CN106558480A - 高温蒸汽输送系统以及方法 - Google Patents

高温蒸汽输送系统以及方法 Download PDF

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CN106558480A
CN106558480A CN201610814116.8A CN201610814116A CN106558480A CN 106558480 A CN106558480 A CN 106558480A CN 201610814116 A CN201610814116 A CN 201610814116A CN 106558480 A CN106558480 A CN 106558480A
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vaporizer
processing chamber
lid
substrate support
processing
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CN106558480B (zh
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V·巴巴扬
Q·梁
T·考夫曼-奥斯本
L·戈代
S·D·耐马尼
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Applied Materials Inc
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Abstract

本公开大体上涉及一种半导体处理装置。在一个实施方式中，在本文中公开一种处理腔室。所述处理腔室包括：腔室主体和盖，所述腔室主体和盖限定内部容积，所述盖被配置成支撑具有帽的外壳；基板支撑件，所述基板支撑件设置在所述内部容积中；蒸发器，所述蒸发器被耦接至所述帽并且具有通向所述处理腔室的所述内部容积的出口，其中所述蒸发器被配置成将前驱物气体输送至所述蒸发器与所述基板支撑件之间限定的处理区域；以及加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成加热所述蒸发器。

Description

高温蒸汽输送系统以及方法
背景
技术领域
本公开的实施方式总体涉及一种半导体处理装置，并且更具体地涉及一种用于输送具有高沸点的前驱物的装置。
背景技术
可靠地生产亚半微米和更小的特征是下一代超大规模集成(VLSI)和特大规模集成(ULSI)的半导体器件的关键技术挑战之一。然而，随着电路技术极限推进，VLSI和ULSI技术的缩小尺寸已对处理能力有另外需求。在基板上可靠形成栅极结构对VLSI和ULSI成功并且对于继续努力增加电路密度来说是重要的。
随着下一代器件的电路密度增加，互连件(诸如通孔、沟槽、触点、栅极结构和其他特征、以及在它们之间的电介质材料)的宽度减至45nm和32nm尺寸以及更小。为了能够制造下一代器件和结构，通常在半导体芯片中使用三维(3D)特征堆叠。具体来说，鳍式场效应晶体管(FinFET)通常被用于在半导体芯片中形成三维(3D)结构。通过以三维而非常规二维的方式布置晶体管，多个晶体管可非常靠近彼此地放置在集成电路(IC)中。随着电路密度和堆叠的增加，用于选择性地将后续材料沉积在先前沉积材料上的能力变得重要。
因此，需要用于适于半导体芯片或其他半导体器件的三维(3D)堆叠的选择性沉积的改进装置。
发明内容
在一个实施方式中，在本文中公开一种处理腔室。所述处理腔室包括：腔室主体和盖，所述腔室主体和盖限定内部容积，所述盖被配置成支撑具有帽的外壳；基板支撑件，所述基板支撑件设置在所述内部容积中；蒸发器，所述蒸发器在所述处理腔室的所述内部容积内被耦接至所述处理腔室的所述帽，其中所述蒸发器被配置成将前驱物气体输送至所述蒸发器与所述基板支撑件之间限定的处理区域；以及加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成加热所述蒸发器。
在另一实施方式中，在本文中公开一种处理腔室。所述处理腔室包括：腔室主体和盖，所述腔室主体和盖限定内部容积，其中所述盖被配置成支撑具有帽的外壳，并且其中所述帽包括水冷底板，用以控制所述帽的温度；基板支撑组件，所述基板支撑组件设置在所述内部容积中；蒸发器，所述蒸发器在所述内部容积内通过隔热件耦接至所述处理腔室的所述帽，其中所述蒸发器被配置成将前驱物输送至所述蒸发器与所述基板支撑组件之间限定的处理区域；以及加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成将所述蒸发器加热至在100℃与600℃之间的温度。
在一个实施方式中，在本文中公开一种用于对多个基板进行处理的基板处理平台。所述基板处理平台包括旋转轨道机构、多个处理腔室和传送机械手。所述多个处理腔室围绕所述旋转轨道机构以阵列设置。一个处理腔室包括：腔室主体和盖，所述腔室主体和盖限定内部容积，所述盖被配置成支撑具有帽的外壳；基板支撑件，所述基板支撑件设置在所述内部容积中；蒸发器，所述蒸发器在所述处理腔室的所述内部容积内被耦接至所述处理腔室的所述帽，其中所述蒸发器被配置成将前驱物气体输送至所述蒸发器与所述基板支撑件之间限定的处理区域；以及加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成加热所述蒸发器。所述传送机械手被配置成运载多个基板，并同时将所述基板传送进出所述基板处理平台。
附图说明
为了可详细理解本公开的上述特征的方式，可通过参照实施方式对简要概述于上的本公开进行更加详细的描述，这些实施方式中的一些实施方式图示于附图中。然而应注意的是，这些附图仅图示本公开的典型实施方式且因此不被视为限制本公开的范围，因为本公开可允许其他等效实施方式。
图1示出了根据一个实施方式的具有受热侧壁和安装在基板上方的蒸发器的处理腔室。
图2示出了根据一个实施方式的具有蒸发器和内部热屏蔽件的处理腔室。
图3示出了根据一个实施方式的具有受热侧壁和多喷嘴蒸发器的处理腔室。
图4示出了根据一个实施方式的具有交叉流动配置的处理腔室。
图5示出了根据一个实施方式的多腔室处理系统。
为了便于理解，已经在可能的地方使用相同的附图标记来指示诸图所共有的相同元件。可构想，一个实施方式的元件和特征可有利地并入其他实施方式中而无需进一步详述。
然而应注意的是，这些附图仅图示本公开的示例性实施方式且因此不被视为限制本公开的范围，因为本公开可允许其他等效实施方式。
具体实施方式
图1示出了根据一个实施方式的处理腔室100。例如，处理腔室100可为化学气相沉积(CVD)腔室、或输送具有高沸点和低蒸汽压的前驱物的任何处理腔室。处理腔室100包括腔室主体102，所述腔室主体具有侧壁104、底部105和盖106。侧壁104和盖106限定内部容积108。在一个实施方式中，侧壁104和盖106被加热。例如，侧壁104和盖106可被加热至250摄氏度(℃)的温度，同时基板支撑组件126可被加热至220℃。在一个实施方式中，基板支撑组件126可为受热基板支撑组件。例如，基板支撑组件126可被加热至约190℃、或要比侧壁104低约20℃-30℃的温度。外部热屏蔽件140可围绕腔室主体102来定位，以便保护用户免于接触受热侧壁104和盖106。基板传送端口110形成在侧壁104中，以用于将基板传送进出内部容积108。
前驱物输送系统112被耦接至处理腔室100，以将前驱物材料供应到内部容积108中。在一个实施方式中，前驱物可包括十八烷基膦酸(ODPA)、六氯化钨、十二硫醇等等。排放端口115可耦接至处理腔室100，所述排放端口与内部容积108连通以控制内部容积108中的压力。处理腔室100内的气体压力可由压力传感器119监测。例如，在一个实施方式中，处理腔室100的压力被维持在1mtorr至200torr之间的压力下。
基板支撑组件126被设置在处理腔室100的内部容积108内。基板支撑组件126被配置成在处理过程中支撑基板(未示出)。基板支撑组件126包括可移动地设置成从中穿过的多个升降杆128。可致动升降杆128以从基板支撑组件126的支撑表面130突出，由此将基板放置成与基板支撑组件126成间隔开关系，以便促进利用传送机械手(未示出)进行传送。
盖106被配置成支撑外壳134。外壳134包括与盖106相对设置的帽136，并且封围蒸发器114。蒸发器可从帽136悬挂起来，或耦接至外壳134的另一部分。蒸发器114包括出口端口142，所述出口端口直接通向内部容积108。蒸发器114被配置成将前驱物输送系统112所供应的前驱物转换成将被供应至基板支撑组件126与蒸发器114之间限定的处理区域124的蒸汽。在室温下，前驱物可以是固体或液体。隔热件113可被放置在帽136与蒸发器114之间，以便保护帽136免于过热。加热元件122定位在外壳134内且与蒸发器114相邻。在一个实施方式中，加热元件122由帽136或外壳134支撑。加热元件122被配置成加热蒸发器114内的前驱物。加热元件122可为例如灯、发光二极管、激光器、电阻式加热器、或任何合适的加热器。在一个实施方式中，加热元件122加热蒸发器114，使得前驱物达到在100℃与600℃之间的温度。帽136可以包括水冷底板144，所述水冷底板被配置成帮助控制帽136和外壳134的温度。
控制器190被耦接至处理腔室100。控制器190包括中央处理单元(CPU)192、存储器194和支持电路196。控制器190被用于控制由蒸发器114供应至处理区域124的气体的速率以及侧壁104、底部105和基板支撑组件126的温度。将基板支撑组件126温度维持为小于蒸发器114温度有助于减小在腔室主体102的侧壁104上的沉积。CPU192可具有可被用于工业环境中的任何形式的通用计算机处理器。软件例程可被存储在存储器194(诸如随机存取存储器、只读存储器、软盘或硬盘驱动器，或者其他形式的数字存储装置)中。支持电路196常规地耦接到CPU 192，并且可以包括高速缓存、时钟电路、输入/输出子系统、电源等等。软件例程在由CPU 192执行时，将CPU 192转变为专用计算机(控制器)190，该专用计算机(控制器)控制处理腔室100，使得根据本公开执行这些工艺。软件例程还可由位于腔室的远程位置的第二控制器(未示出)存储和/或执行。
控制器190可代表包括多个控制器的控制系统。例如，控制器190可以包括加热器控制器、多通道加热器控制器和主控制器。加热器控制器被配置成为蒸发器114的加热元件供电。多通道加热器控制器被配置成加热侧壁104、盖106、基板支撑组件126和内部热屏蔽件(图2中所示)。主控制器被配置成通过改变蒸发器114的温度和排放端口115位置来调节腔室100压力。主控制器还基于用户输入和制法参数来将设定点提供给多通道加热器控制器。
图2示出了根据另一实施方式的处理腔室200。处理腔室200基本上类似于处理腔室100。处理腔室200包括腔室主体202，所述腔室主体具有侧壁204、底部205和盖206。侧壁204、盖206和底部205限定内部容积208。在一个实施方式中，侧壁204和盖206是水冷的腔室壁。水冷的腔室侧壁204和盖206有助于控制腔室主体202的温度。
盖206被配置成支撑外壳234。外壳234包括与盖206相对设置的帽236，并且封围蒸发器114。蒸发器114可从帽236悬挂起来，或耦接至外壳234的另一部分。内部热屏蔽件210被安装至帽236或外壳234且在内部容积208内。隔热件211定位在内部热屏蔽件210与帽236或外壳234之间。内部热屏蔽件210与腔室主体202间隔开。内部热屏蔽件210至少部分地环绕蒸发器114。可以加热内部热屏蔽件210以代替将腔室主体202的侧壁204和盖206加热至高温。内部热屏蔽件210防止在腔室主体202上的非预期的冷凝，并且消除对外部热屏蔽件(诸如图1中的外部热屏蔽件140)的需要，并且还消除了对加热腔室的壁和盖的需要，从而产生能量有效系统。在一个实施方式中，内部热屏蔽件210包括内部压力传感器231，所述内部压力传感器被配置成测量内部热屏蔽件210的容积内的气体压力，而压力传感器119监测处理腔室200在内部热屏蔽件210外的压力。
蒸发器114包括出口端口142，所述出口端口延伸穿过内部热屏蔽件210。出口端口142通向在热屏蔽件210与设置在基板支撑组件126的支撑表面130上的基板之间的处理区域124内的空间。在另一实施方式中，喷淋头(未示出)可被集成到内部热屏蔽件210中，以用于均匀的蒸汽分配。出口端口142将会通向喷淋头中的气室(未示出)。喷淋头将被加热至与热屏蔽件相同的温度。
在一个实施方式中，处理腔室200进一步包括第一致动器212，所述第一致动器被耦接至帽236。帽236通过波纹管214来耦接至外壳234。波纹管214允许致动器212在z方向上移动帽236，同时维持处理腔室200的内部容积208内的真空。在z方向上移动帽236使耦接至帽236的内部热屏蔽件210和蒸发器114升降。降低内部热屏蔽件210减小基板与内部热屏蔽件210之间的处理区域124内的空间，并且限制基板的正上方的工艺气体。这导致对工艺气体的有效工艺材料和能量利用。在一个实施方式中，内部热屏蔽件210可包括位于内部热屏蔽件210基部处的O形环(未示出)。O形环允许基板上方的腔被加压至比处理腔室200的基部压力更高的压力，从而产生有效的工艺材料利用。这由定位在内部热屏蔽件210内的内部压力传感器231来测量。
在另一实施方式中，处理腔室200可以包括第二致动器216，所述第二致动器被耦接至基板支撑组件126。第二致动器216被配置成在z方向上移动基板支撑组件126。在向上z方向上移动基板支撑组件126将基板支撑组件126定位得更靠近于内部热屏蔽件210，使得限制了处理区域124，这类似于使致动器212降低内部热屏蔽件210。波纹管250被耦接至腔室主体202的底部205，以便在致动器216移动基板支撑组件126时维持真空。
图3示出了处理腔室300的另一实施方式。处理腔室300基本上类似于处理腔室200和100。处理腔室300包括腔室主体302，所述腔室主体具有侧壁304、底部305和盖306。侧壁304、盖306和底部305限定内部容积308。在一个实施方式中，侧壁304和盖306被加热。例如，侧壁304和盖306可被加热至250℃的温度。外部热屏蔽件340可围绕腔室主体302来定位，以便保护用户免于接触受热侧壁304和盖306。在另一实施方式中，可以使用内部热屏蔽件(类似于内部热屏蔽件210)来代替加热侧壁304和盖306。
盖306被配置成支撑外壳334。外壳334包括与盖306相对设置的帽336，并且封围蒸发器314。蒸发器314可从帽336悬挂起来，或耦接至外壳334的另一部分。蒸发器314包括多个出口端口316，所述多个出口端口直接通向内部容积308。蒸发器314被配置成将前驱物输送系统112所供应的前驱物转换成将被供应至基板支撑组件126与蒸发器114之间限定的处理区域324的蒸汽。该多个出口316允许均匀的蒸汽流被分配至基板。多个加热元件322被定位成与蒸发器314相邻。在一个实施方式中，加热元件322被安装至帽336、在帽336与蒸发器314之间。加热元件322被配置成加热蒸发器314内的前驱物。加热元件322可为例如灯、发光二极管、激光器、电阻式加热器、或任何合适加热元件。在一个实施方式中，加热元件322加热蒸发器314，使得前驱物达到在100℃与600℃之间的温度。该多个加热元件322和该多个出口316允许在基板表面上的不同的处理区。
图4示出了根据另一实施方式的处理腔室400。处理腔室400基本上类似于处理腔室100。处理腔室400包括腔室主体402，所述腔室主体具有侧壁404、底部405和盖406。侧壁404、盖406和底部405限定内部容积408。在一个实施方式中，侧壁404和盖406被加热。例如，侧壁404和盖406可被加热至250℃的温度。外部热屏蔽件440可围绕腔室主体402来定位，以便保护用户免于接触受热侧壁404和盖406。基板传送端口110形成在侧壁404中，以用于将基板传送进出内部容积408。
盖406被配置成支撑外壳434。外壳434包括与盖406相对设置的帽436，并且封围蒸发器114。蒸发器114可从帽436悬挂起来，或耦接至外壳434的另一部分。蒸发器114包括出口端口142，所述出口端口直接通向内部容积408。盖406在基板支撑组件126的中心线422的第一侧420处支撑外壳。因此，蒸发器114在基板支撑组件126的中心线422的第一侧420处被耦接至帽436。排放端口115定位在中心线422的与第一侧420相对的第二侧426处。将蒸发器114和排放端口115定位在中心线422的相对侧处允许蒸汽在处理区域424中的基板(未示出)的表面上交叉流动。
替代地，在另一实施方式中，外壳434可由侧壁404水平地支撑，以便在基板的表面上提供蒸汽的交叉流动。蒸发器114被定位在基板支撑组件126的中心线422的第一侧420处的侧壁404上。
在另一实施方式中，腔室400可以包括竖直腔室配置，其中基板竖直地安装在竖直基板支撑组件上，并且气体跨基板的表面从顶部流动至底部。
图5示出了根据一个实施方式的基板处理系统500的示意图。处理系统500包括处理平台502，所述处理平台具有多个处理腔室506。处理平台502被耦接至传送腔室504。传送腔室504包括设置在其中的双刀机械手505，所述双刀机械手被配置成将两个基板(未示出)传送进出处理平台502。任选地，多个缓冲站508被设置在处理腔室506之间，以用于在空间上分开每个处理腔室506和/或进行基板加热或固化。
如图5所示，多个基板可旋转地设置在处理腔室506中。在基板处理过程中，旋转轨道机构510被配置成以第一旋转速度沿水平方向512(例如，顺时针或逆时针地)旋转，使得多个基板在处理腔室506和缓冲站508中的每者下旋转并且穿过其中。
处理腔室506可为被配置成将前驱物沉积至基板的处理腔室100、200、300或400的任一者。处理腔室506还可包括用于将原生氧化物、污染物或两者从基板的暴露表面去除的预清洁处理腔室、沉积后处理腔室；以及用于在基板表面上形成结构的沉积腔室。
尽管上述内容针对本公开的实施方式，但也可在不背离本公开的基本范围的情况下设计本公开的另外实施方式，并且本公开的范围是由随附权利要求书来确定。

Claims (20)

1.一种处理腔室，所述处理腔室包括：
腔室主体和盖，所述腔室主体和盖限定内部容积，所述盖被配置成支撑具有帽的外壳；
基板支撑件，所述基板支撑件设置在所述内部容积中；
蒸发器，所述蒸发器被耦接至所述帽并且具有通向所述处理腔室的所述内部容积的出口，其中所述蒸发器被配置成将前驱物气体输送至所述蒸发器与所述基板支撑件之间限定的处理区域；以及
加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成加热所述蒸发器。
2.根据权利要求1所述的处理腔室，其特征在于，所述腔室主体包括：
受热的壁；
受热的盖；以及
热屏蔽件，所述热屏蔽件被定位成接近所述受热的壁和所述受热的盖，并且其中所述基板支撑件被加热。
3.根据权利要求2所述的处理腔室，其特征在于，所述帽包括水冷底板。
4.根据权利要求1所述的处理腔室，进一步包括：
内部热屏蔽件，所述内部热屏蔽件设置在所述处理区域中，所述内部热屏蔽件与所述腔室主体间隔开并至少部分地包围所述蒸发器，其中所述内部热屏蔽件被加热。
5.根据权利要求4所述的处理腔室，其特征在于，所述处理腔室进一步包括：
致动器，所述致动器被耦接至所述内部热屏蔽件，所述致动器被配置成使所述内部热屏蔽件在所述帽与所述基板支撑件之间移动。
6.根据权利要求4所述的处理腔室，进一步包括：
致动器，所述致动器可操作以使所述基板支撑件朝向所述盖移动。
7.根据权利要求1所述的处理腔室，其特征在于，所述蒸发器的所述出口包括多个开口。
8.根据权利要求1所述的处理腔室，进一步包括：
排放端口，所述排放端口被定位在所述基板支撑件的中心线的第一侧处，并且其中所述蒸发器被设置在所述基板支撑件的所述中心线的第二侧上。
9.根据权利要求1所述的处理腔室，其特征在于，所述加热器选自由以下项组成的组：电阻式加热器、卤素灯、发光二极管、激光器和闪光灯。
10.一种处理腔室，所述处理腔室包括：
腔室主体和盖，所述腔室主体和盖限定内部容积，其中所述盖被配置成支撑具有帽的外壳，其中所述帽包括水冷底板，用以控制所述盖的温度；
基板支撑组件，所述基板支撑组件设置在所述内部容积中；
蒸发器，所述蒸发器通过隔热件在所述内部容积内耦接至所述处理腔室的所述帽，其中所述蒸发器被配置成将前驱物输送至所述蒸发器与所述基板支撑组件之间限定的处理区域；以及
加热器，所述加热器被设置成与所述蒸发器相邻，其中所述加热器被配置成将所述蒸发器加热至在100℃与600℃之间的温度。
11.根据权利要求10所述的处理腔室，其特征在于，所述腔室主体包括：
受热的壁；
受热的盖；以及
热屏蔽件，所述热屏蔽件被定位成围绕所述受热的壁和所述受热的盖，并且其中所述基板支撑件被加热。
12.根据权利要求10所述的处理腔室，进一步包括：
内部热屏蔽件，所述内部热屏蔽件设置在所述处理区域中、与所述腔室主体间隔开，并至少部分地包围所述蒸发器，其中所述内部热屏蔽件被加热。
13.根据权利要求10所述的处理腔室，其特征在于，所述蒸发器包括多个开口。
14.根据权利要求10所述的处理腔室，进一步包括：
排放端口，所述排放端口被定位在所述基板支撑件的中心线的第一侧处，并且其中所述蒸发器被设置在所述基板支撑件的所述中心线的第二侧处。
15.一种用于处理多个基板的基板处理平台，所述基板处理平台包括：
旋转轨道机构；
多个处理腔室，所述多个处理腔室围绕所述旋转轨道机构以阵列设置，其中所述处理腔室之一进一步包括：
腔室主体和盖，所述腔室主体和盖限定内部容积，所述盖被配置成支撑具有帽的外壳；
基板支撑件，所述基板支撑件设置在所述内部容积中；
蒸发器，所述蒸发器被耦接至所述帽并且具有通向所述处理腔室的所述内部容积的出口，其中所述蒸发器被配置成将前驱物气体输送至所述蒸发器与所述基板支撑件之间限定的处理区域；以及
加热器，所述加热器被设置成与所述蒸发器相邻；以及
传送机械手，所述传送机械手被配置成运载多个基板，并同时将所述基板传送进出所述基板处理平台。
16.根据权利要求15所述的基板处理平台，其特征在于，所述处理腔室进一步包括：
受热的壁；
受热的盖；以及
热屏蔽件，所述热屏蔽件被定位成围绕所述受热的壁和所述受热的盖，并且其中所述基板支撑件被加热。
17.根据权利要求15所述的基板处理平台，其特征在于，所述处理腔室进一步包括：
内部热屏蔽件，所述内部热屏蔽件设置在所述处理区域中、与所述腔室主体间隔开，并至少部分地包围所述蒸发器，其中所述内部热屏蔽件被加热。
18.根据权利要求17所述的基板处理平台，其特征在于，所述处理腔室进一步包括：
致动器，所述致动器被耦接至所述内部热屏蔽件，所述致动器被配置成使所述内部热屏蔽件在所述帽与所述基板支撑件之间移动。
19.根据权利要求15所述的基板处理平台，其特征在于，所述蒸发器包括多个开口。
20.根据权利要求15所述的基板处理平台，其特征在于，所述处理腔室进一步包括：
排放端口，所述排放端口被定位在所述基板支撑件的中心线的第一侧处，并且其中所述蒸发器被设置在所述基板支撑件的所述中心线的第二侧处。
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