TWI747241B - 高溫蒸汽輸送系統以及方法 - Google Patents

高溫蒸汽輸送系統以及方法 Download PDF

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TWI747241B
TWI747241B TW109113153A TW109113153A TWI747241B TW I747241 B TWI747241 B TW I747241B TW 109113153 A TW109113153 A TW 109113153A TW 109113153 A TW109113153 A TW 109113153A TW I747241 B TWI747241 B TW I747241B
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evaporator
processing chamber
processing
internal
substrate
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維亞契史拉維 芭芭洋
奇偉 梁
托賓 高夫曼－歐斯柏恩
魯多維 葛迪
史林尼法斯Ｄ 奈馬尼
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美商應用材料股份有限公司
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Abstract

本公開大體上涉及一種半導體處理裝置。在一個實施方式中，在本文中公開一種處理腔室。該處理腔室包括：腔室主體和蓋，該腔室主體和蓋限定內部容積，該蓋被配置成支撐具有帽的外殼；基板支撐件，該基板支撐件設置在該內部容積中；蒸發器，該蒸發器被耦接至該帽並且具有通向該處理腔室的該內部容積的出口，其中該蒸發器被配置成將前驅物氣體輸送至該蒸發器與該基板支撐件之間限定的處理區域；以及加熱器，該加熱器被設置成與該蒸發器相鄰，其中該加熱器被配置成加熱該蒸發器。

Description

高溫蒸汽輸送系統以及方法
本公開的實施方式總體涉及一種半導體處理裝置，並且更具體地涉及一種用於輸送具有高沸點的前驅物的裝置。
可靠地生產亞半微米和更小的特徵是下一代超大規模集成（VLSI）和特大規模集成（ULSI）的半導體元件的關鍵技術挑戰之一。然而，隨著電路技術極限推進，VLSI和ULSI技術的縮小尺寸已對處理能力有另外需求。在基板上可靠形成閘極結構對VLSI和ULSI成功並且對於繼續努力增加電路密度來說是重要的。
隨著下一代元件的電路密度增加，互連件（諸如通孔、溝槽、觸點、閘極結構和其他特徵、以及在它們之間的介電質材料）的寬度減至45 nm和32 nm尺寸以及更小。為了能夠製造下一代元件和結構，通常在半導體晶圓中使用三維（3D）特徵堆疊。具體來說，鰭式場效應電晶體（FinFET）通常被用於在半導體晶圓中形成三維（3D）結構。透過以三維而非常規二維的方式佈置電晶體，多個電晶體可非常靠近彼此地放置在積體電路（IC）中。隨著電路密度和堆疊的增加，用於選擇性地將後續材料沉積在先前沉積材料上的能力變得重要。
因此，需要用於適於半導體晶圓或其他半導體元件的三維（3D）堆疊的選擇性沉積的改進裝置。
在一個實施方式中，在本文中公開一種處理腔室。該處理腔室包括：腔室主體和蓋，該腔室主體和蓋限定內部容積，該蓋被配置成支撐具有帽的外殼；基板支撐件，該基板支撐件設置在該內部容積中；蒸發器，該蒸發器在該處理腔室的該內部容積內被耦接至該處理腔室的該帽，其中該蒸發器被配置成將前驅物氣體輸送至該蒸發器與該基板支撐件之間限定的處理區域；以及加熱器，該加熱器被設置成與該蒸發器相鄰，其中該加熱器被配置成加熱該蒸發器。
在另一實施方式中，在本文中公開一種處理腔室。該處理腔室包括：腔室主體和蓋，該腔室主體和蓋限定內部容積，其中該蓋被配置成支撐具有帽的外殼，並且其中該帽包括水冷底板材，用以控制該帽的溫度；基板支撐組件，該基板支撐組件設置在該內部容積中；蒸發器，該蒸發器在該內部容積內透過隔熱件耦接至該處理腔室的該帽，其中該蒸發器被配置成將前驅物輸送至該蒸發器與該基板支撐組件之間限定的處理區域；以及加熱器，該加熱器被設置成與該蒸發器相鄰，其中該加熱器被配置成將該蒸發器加熱至在100℃與600℃之間的溫度。
在一個實施方式中，在本文中公開一種用於對多個基板進行處理的基板處理平臺。該基板處理平臺包括旋轉軌道機構、多個處理腔室和傳送機械手。該多個處理腔室圍繞該旋轉軌道機構以陣列設置。一個處理腔室包括：腔室主體和蓋，該腔室主體和蓋限定內部容積，該蓋被配置成支撐具有帽的外殼；基板支撐件，該基板支撐件設置在該內部容積中；蒸發器，該蒸發器在該處理腔室的該內部容積內被耦接至該處理腔室的該帽，其中該蒸發器被配置成將前驅物氣體輸送至該蒸發器與該基板支撐件之間限定的處理區域；以及加熱器，該加熱器被設置成與該蒸發器相鄰，其中該加熱器被配置成加熱該蒸發器。該傳送機械手被配置成運載多個基板，並同時將該基板傳送進出該基板處理平臺。
圖1示出了根據一個實施方式的處理腔室100。例如，處理腔室100可為化學氣相沉積（CVD）腔室、或輸送具有高沸點和低蒸汽壓的前驅物的任何處理腔室。處理腔室100包括腔室主體102，該腔室主體具有側壁104、底部105和蓋106。側壁104和蓋106限定內部容積108。在一個實施方式中，側壁104和蓋106被加熱。例如，側壁104和蓋106可被加熱至攝氏250度（℃）的溫度，同時基板支撐組件126可被加熱至220℃。在一個實施方式中，基板支撐組件126可為受熱基板支撐組件。例如，基板支撐組件126可被加熱至約190℃、或要比側壁104低約20℃-30℃的溫度。外部熱遮罩件140可圍繞腔室主體102來定位，以便保護使用者免於接觸受熱側壁104和蓋106。基板傳送埠110形成在側壁104中，以用於將基板傳送進出內部容積108。
前驅物輸送系統112被耦接至處理腔室100，以將前驅物材料供應到內部容積108中。在一個實施方式中，前驅物可包括十八烷基膦酸（ODPA）、六氯化鎢、十二硫醇等等。排放埠115可耦接至處理腔室100，該排放埠與內部容積108連通以控制內部容積108中的壓力。處理腔室100內的氣體壓力可由壓力感測器119監測。例如，在一個實施方式中，處理腔室100的壓力被維持在1 mtorr至200 torr之間的壓力下。
基板支撐組件126被設置在處理腔室100的內部容積108內。基板支撐組件126被配置成在處理過程中支撐基板（未圖示）。基板支撐組件126包括可移動地設置成從中穿過的多個升降桿128。可致動升降桿128以從基板支撐組件126的支撐表面130突出，由此將基板放置成與基板支撐組件126成間隔開關係，以便促進利用傳送機械手（未圖示）進行傳送。
蓋106被配置成支撐外殼134。外殼134包括與蓋106相對設置的帽136，並且封圍蒸發器114。蒸發器可從帽136懸掛起來，或耦接至外殼134的另一部分。蒸發器114包括出口埠142，該出口埠直接通向內部容積108。蒸發器114被配置成將前驅物輸送系統112所供應的前驅物轉換成將被供應至基板支撐組件126與蒸發器114之間限定的處理區域124的蒸汽。在室溫下，前驅物可以是固體或液體。隔熱件113可被放置在帽136與蒸發器114之間，以便保護帽136免於過熱。加熱元件122定位在外殼134內且與蒸發器114相鄰。在一個實施方式中，加熱元件122由帽136或外殼134支撐。加熱元件122被配置成加熱蒸發器114內的前驅物。加熱元件122可為例如燈、發光二極體、雷射器、電阻式加熱器、或任何合適的加熱器。在一個實施方式中，加熱元件122加熱蒸發器114，使得前驅物達到在100℃與600℃之間的溫度。帽136可以包括水冷底板材144，該水冷底板材被配置成説明控制帽136和外殼134的溫度。
控制器190被耦接至處理腔室100。控制器190包括中央處理單元（CPU）192、記憶體194和支援電路196。控制器190被用於控制由蒸發器114供應至處理區域124的氣體的速率以及側壁104、底部105和基板支撐組件126的溫度。將基板支撐組件126溫度維持為小於蒸發器114溫度有助於減小在腔室主體102的側壁104上的沉積。CPU 192可具有可被用於工業環境中的任何形式的通用電腦處理器。軟體常式可被存儲在記憶體194（諸如隨機存取記憶體、唯讀記憶體、軟碟或硬碟驅動器，或者其他形式的數位存儲裝置）中。支援電路196常規地耦接到CPU 192，並且可以包括快取記憶體、時鐘電路、輸入/輸出子系統、電源等等。軟體常式在由CPU 192執行時，將CPU 192轉變為專用電腦（控制器）190，該專用電腦（控制器）控制處理腔室100，使得根據本公開執行這些製程。軟體常式還可由位於腔室的遠端位置的第二控制器（未圖示）存儲和/或執行。
控制器190可代表包括多個控制器的控制系統。例如，控制器190可以包括加熱器控制器、多通道加熱器控制器和主控制器。加熱器控制器被配置成為蒸發器114的加熱元件供電。多通道加熱器控制器被配置成加熱側壁104、蓋106、基板支撐組件126和內部熱遮罩件（圖2中所示）。主控制器被配置成透過改變蒸發器114的溫度和排放埠115位置來調節腔室100壓力。主控制器還基於使用者輸入和制法參數來將設定點提供給多通道加熱器控制器。
圖2示出了根據另一實施方式的處理腔室200。處理腔室200基本上類似於處理腔室100。處理腔室200包括腔室主體202，該腔室主體具有側壁204、底部205和蓋206。側壁204、蓋206和底部205限定內部容積208。在一個實施方式中，側壁204和蓋206是水冷的腔室壁。水冷的腔室側壁204和蓋206有助於控制腔室主體202的溫度。
蓋206被配置成支撐外殼234。外殼234包括與蓋206相對設置的帽236，並且封圍蒸發器114。蒸發器114可從帽236懸掛起來，或耦接至外殼234的另一部分。內部熱遮罩件210被安裝至帽236或外殼234且在內部容積208內。隔熱件211定位在內部熱遮罩件210與帽236或外殼234之間。內部熱遮罩件210與腔室主體202間隔開。內部熱遮罩件210至少部分地環繞蒸發器114。可以加熱內部熱遮罩件210以代替將腔室主體202的側壁204和蓋206加熱至高溫。內部熱遮罩件210防止在腔室主體202上的非預期的冷凝，並且減弱對外部熱遮罩件（諸如圖1中的外部熱遮罩件140）的需要，並且還減弱了對加熱腔室的壁和蓋的需要，從而產生能量有效系統。在一個實施方式中，內部熱遮罩件210包括內部壓力感測器231，該內部壓力感測器被配置成量測內部熱遮罩件210的容積內的氣體壓力，而壓力感測器119監測處理腔室200在內部熱遮罩件210外的壓力。
蒸發器114包括出口埠142，該出口埠延伸穿過內部熱遮罩件210。出口埠142通向在熱遮罩件210與設置在基板支撐組件126的支撐表面130上的基板之間的處理區域124內的空間。在另一實施方式中，噴淋頭（未圖示）可被集成到內部熱遮罩件210中，以用於均勻的蒸汽分配。出口埠142將會通向噴淋頭中的氣室（未圖示）。噴淋頭將被加熱至與熱遮罩件相同的溫度。
在一個實施方式中，處理腔室200進一步包括第一致動器212，該第一致動器被耦接至帽236。帽236透過波紋管214來耦接至外殼234。波紋管214允許致動器212在z方向上移動帽236，同時維持處理腔室200的內部容積208內的真空。在z方向上移動帽236使耦接至帽236的內部熱遮罩件210和蒸發器114升降。降低內部熱遮罩件210減小基板與內部熱遮罩件210之間的處理區域124內的空間，並且限制基板的正上方的製程氣體。這導致對製程氣體的有效製程材料和能量利用。在一個實施方式中，內部熱遮罩件210可包括位於內部熱遮罩件210基部處的O形環（未圖示）。O形環允許基板上方的腔被加壓至比處理腔室200的基部壓力更高的壓力，從而產生有效的製程材料利用。這由定位在內部熱遮罩件210內的內部壓力感測器231來量測。
在另一實施方式中，處理腔室200可以包括第二致動器216，該第二致動器被耦接至基板支撐組件126。第二致動器216被配置成在z方向上移動基板支撐組件126。在向上z方向上移動基板支撐組件126將基板支撐組件126定位得更靠近於內部熱遮罩件210，使得限制了處理區域124，這類似於使致動器212降低內部熱遮罩件210。波紋管250被耦接至腔室主體202的底部205，以便在致動器216移動基板支撐組件126時維持真空。
圖3示出了處理腔室300的另一實施方式。處理腔室300基本上類似於處理腔室200和100。處理腔室300包括腔室主體302，該腔室主體具有側壁304、底部305和蓋306。側壁304、蓋306和底部305限定內部容積308。在一個實施方式中，側壁304和蓋306被加熱。例如，側壁304和蓋306可被加熱至250℃的溫度。外部熱遮罩件340可圍繞腔室主體302來定位，以便保護使用者免於接觸受熱側壁304和蓋306。在另一實施方式中，可以使用內部熱遮罩件（類似於內部熱遮罩件210）來代替加熱側壁304和蓋306。
蓋306被配置成支撐外殼334。外殼334包括與蓋306相對設置的帽336，並且封圍蒸發器314。蒸發器314可從帽336懸掛起來，或耦接至外殼334的另一部分。蒸發器314包括多個出口埠316，該多個出口埠直接通向內部容積308。蒸發器314被配置成將前驅物輸送系統112所供應的前驅物轉換成將被供應至基板支撐組件126與蒸發器114之間限定的處理區域324的蒸汽。該多個出口316允許均勻的蒸汽流被分配至基板。多個加熱元件322被定位成與蒸發器314相鄰。在一個實施方式中，加熱元件322被安裝至帽336、在帽336與蒸發器314之間。加熱元件322被配置成加熱蒸發器314內的前驅物。加熱元件322可為例如燈、發光二極體、雷射器、電阻式加熱器、或任何合適加熱元件。在一個實施方式中，加熱元件322加熱蒸發器314，使得前驅物達到在100℃與600℃之間的溫度。該多個加熱元件322和該多個出口316允許在基板表面上的不同的處理區。
圖4示出了根據另一實施方式的處理腔室400。處理腔室400基本上類似於處理腔室100。處理腔室400包括腔室主體402，該腔室主體具有側壁404、底部405和蓋406。側壁404、蓋406和底部405限定內部容積408。在一個實施方式中，側壁404和蓋406被加熱。例如，側壁404和蓋406可被加熱至250℃的溫度。外部熱遮罩件440可圍繞腔室主體402來定位，以便保護使用者免於接觸受熱側壁404和蓋406。基板傳送埠110形成在側壁404中，以用於將基板傳送進出內部容積408。
蓋406被配置成支撐外殼434。外殼434包括與蓋406相對設置的帽436，並且封圍蒸發器114。蒸發器114可從帽436懸掛起來，或耦接至外殼434的另一部分。蒸發器114包括出口埠142，該出口埠直接通向內部容積408。蓋406在基板支撐組件126的中心線422的第一側420處支撐外殼。因此，蒸發器114在基板支撐組件126的中心線422的第一側420處被耦接至帽436。排放埠115定位在中心線422的與第一側420相對的第二側426處。將蒸發器114和排放埠115定位在中心線422的相對側處允許蒸汽在處理區域424中的基板（未圖示）的表面上交叉流動。
替代地，在另一實施方式中，外殼434可由側壁404水平地支撐，以便在基板的表面上提供蒸汽的交叉流動。蒸發器114被定位在基板支撐組件126的中心線422的第一側420處的側壁404上。
在另一實施方式中，腔室400可以包括豎直腔室配置，其中基板豎直地安裝在豎直基板支撐組件上，並且氣體跨基板的表面從頂部流動至底部。
圖5示出了根據一個實施方式的基板處理系統500的示意圖。處理系統500包括處理平臺502，該處理平臺具有多個處理腔室506。處理平臺502被耦接至傳送腔室504。傳送腔室504包括設置在其中的雙刀機械手505，該雙刀機械手被配置成將兩個基板（未圖示）傳送進出處理平臺502。任選地，多個緩衝站508被設置在處理腔室506之間，以用於在空間上分開每個處理腔室506和/或進行基板加熱或固化。
如圖5所示，多個基板可旋轉地設置在處理腔室506中。在基板處理過程中，旋轉軌道機構510被配置成以第一旋轉速度沿水平方向512（例如，順時針或逆時針地）旋轉，使得多個基板在處理腔室506和緩衝站508中的每者下旋轉並且穿過其中。
處理腔室506可為被配置成將前驅物沉積至基板的處理腔室100、200、300或400的任一者。處理腔室506還可包括用於將原生氧化物、污染物或兩者從基板的暴露表面去除的預清潔處理腔室、沉積後處理腔室；以及用於在基板表面上形成結構的沉積腔室。
儘管上述內容針對本公開的實施方式，但亦可在不背離本公開的基本範圍的情況下設計本公開的另外實施方式，並且本公開的範圍是由隨附申請專利範圍來確定。
100:處理腔室 102:腔室主體 104:側壁 105:底部 106:蓋 108:內部容積 110:基板傳送埠 112:前驅物輸送系統 113:隔熱件 114:蒸發器 115:排放埠 119:壓力感測器 122:加熱元件 124:處理區域 126:基板支撐組件 128:升降桿 130:支撐表面 134:外殼 136:帽 140:外部熱遮罩件 142:出口埠 144:水冷底板材 190:控制器 192:中央處理單元 194:記憶體 196:支援電路 200:處理腔室 202:腔室主體 204:側壁 205:底部 206:蓋 208:內部容積 210:內部熱遮罩件 211:隔熱件 212:致動器 214:波紋管 216:第二致動器 231:內部壓力感測器 234:外殼 236:帽 250:波紋管 300:處理腔室 302:腔室主體 304:側壁 305:底部 306:蓋 308:內部容積 314:蒸發器 316:出口埠 322:加熱元件 324:處理區域 334:外殼 336:帽 340:外部熱遮罩件 400:處理腔室 402:腔室主體 404:側壁 405:底部 406:蓋 408:內部容積 420:第一側 422:中心線 424:處理區域 426:第二側 434:外殼 436:帽 440:外部熱遮罩件 500:基板處理系統 502:處理平臺 504:傳送腔室 505:雙刀機械手 506:處理腔室 508:緩衝站 510:旋轉軌道機構 512:水平方向
為了可詳細理解本公開的上述特徵的方式，可透過參照實施方式對簡要概述於上的本公開進行更加詳細的描述，這些實施方式中的一些實施方式圖示於附圖中。然而應注意的是，這些附圖僅圖示本公開的典型實施方式且因此不被視為限制本公開的範圍，因為本公開可允許其他等效實施方式。
圖1示出了根據一個實施方式的具有受熱側壁和安裝在基板上方的蒸發器的處理腔室。
圖2示出了根據一個實施方式的具有蒸發器和內部熱遮罩件的處理腔室。
圖3示出了根據一個實施方式的具有受熱側壁和多噴嘴蒸發器的處理腔室。
圖4示出了根據一個實施方式的具有交叉流動配置的處理腔室。
圖5示出了根據一個實施方式的多腔室處理系統。
為了便於理解，已經在可能的地方使用相同的附圖標記來指示諸圖所共有的相同元件。可構想，一個實施方式的元件和特徵可有利地併入其他實施方式中而無需進一步詳述。
然而應注意的是，這些附圖僅圖示本公開的示例性實施方式且因此不被視為限制本公開的範圍，因為本公開可允許其他等效實施方式。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
100:處理腔室
102:腔室主體
104:側壁
105:底部
106:蓋
108:內部容積
110:基板傳送埠
112:前驅物輸送系統
113:隔熱件
114:蒸發器
115:排放埠
119:壓力感測器
122:加熱元件
124:處理區域
126:基板支撐組件
128:升降桿
130:支撐表面
134:外殼
136:帽
140:外部熱遮罩件
142:出口埠
144:水冷底板材
190:控制器
192:中央處理單元
194:記憶體
196:支援電路

Claims (20)

  1. 一種處理腔室，包括： 一腔室主體及一蓋，該腔室主體及該蓋限定該處理腔室的一內部容積，該蓋支撐一外殼，該外殼包括； 一蒸發器； 一內部熱遮罩件，該內部熱遮罩件與該腔室主體間隔開，該內部熱遮罩件包圍該蒸發器且該內部熱遮罩件包圍該蒸發器的一出口埠； 一加熱器，該加熱器被設置成與該蒸發器相鄰；及 一第一致動器，該第一致動器耦接至該蒸發器及該內部熱遮罩件。
  2. 如請求項1所述之處理腔室，其中可操作該第一致動器以移動該蒸發器及該內部熱遮罩件至一位置，該位置封圍一基板支撐件的一表面，該基板支撐件設置在該處理腔室的該內部容積中，經封圍的該表面及該內部熱遮罩件形成一處理區域，該處理區域對該蒸發器的該出口埠開啟。
  3. 如請求項2所述之處理腔室，其中該腔室主體包括： 溫度受控壁；及 一溫度受控蓋。
  4. 如請求項3所述之處理腔室，其中該外殼進一步包括一帽。
  5. 如請求項2所述之處理腔室，其中該內部熱遮罩件被加熱。
  6. 如請求項4所述之處理腔室，進一步包括： 一第二致動器，可操作該第二致動器以移動該基板支撐件朝向該蓋。
  7. 如請求項1所述之處理腔室，其中該蒸發器的該出口埠包括複數個開口。
  8. 如請求項2所述之處理腔室，進一步包括： 一排放埠，該排放埠被定位在該基板支撐件的一中心線的一第一側處，且其中該蒸發器被設置在該基板支撐件的該中心線的一第二側上。
  9. 如請求項1所述之處理腔室，其中從由以下項組成的群組來選擇該加熱器：一電阻式加熱器、鹵素燈、發光二極體、雷射器和閃光燈。
  10. 一種處理腔室，包括： 一腔室主體及一蓋，該腔室主體及該蓋限定該處理腔室的一內部容積，該蓋支撐一外殼，該外殼包括； 一蒸發器； 一內部熱遮罩件，該內部熱遮罩件與該腔室主體間隔開，該內部熱遮罩件包圍該蒸發器且該內部熱遮罩件包圍該蒸發器的一出口埠； 一第一隔熱件，該第一隔熱件耦接至該蒸發器； 一第二隔熱件，該第二隔熱件耦接至該內部熱遮罩件； 一加熱器，該加熱器被設置成與該蒸發器相鄰；及 一第一致動器，該第一致動器耦接至該蒸發器及該內部熱遮罩件。
  11. 如請求項10所述之處理腔室，其中可操作該第一致動器以移動該蒸發器及該內部熱遮罩件至一位置，該位置封圍一基板支撐件的一表面，該基板支撐件設置在該處理腔室的該內部容積中，經封圍的該表面及該內部熱遮罩件形成一處理區域，該處理區域對該蒸發器的該出口埠開啟。
  12. 如請求項10所述之處理腔室，其中該腔室主體包括： 溫度受控壁；及 一溫度受控蓋。
  13. 如請求項10所述之處理腔室，其中該內部熱遮罩件被加熱。
  14. 如請求項10所述之處理腔室，進一步包括： 一排放埠，該排放埠被定位在該腔室主體的一中心線的一第一側處，且其中該蒸發器被設置在該腔室主體的該中心線的一第二側處。
  15. 一種用於處理複數個基板的基板處理平臺，該基板處理平臺包括： 一旋轉軌道機構； 複數個處理腔室，該複數個處理腔室圍繞該旋轉軌道機構以一陣列設置，其中該處理腔室的一第一處理腔室進一步包括： 一腔室主體及一蓋，該腔室主體及該蓋限定該處理腔室的一內部容積，該蓋支撐一外殼，該外殼包括； 一蒸發器； 一內部熱遮罩件，該內部熱遮罩件與該腔室主體間隔開，該內部熱遮罩件包圍該蒸發器且該內部熱遮罩件包圍該蒸發器的一出口埠； 一加熱器，該加熱器被設置成與該蒸發器相鄰；及 一第一致動器，該第一致動器耦接至該蒸發器及該內部熱遮罩件。
  16. 如請求項15所述之基板處理平臺，其中可操作該第一致動器以移動該蒸發器及該內部熱遮罩件至一位置，該位置封圍一基板支撐件的一表面，該基板支撐件設置在該第一處理腔室的該內部容積中，經封圍的該表面及該內部熱遮罩件形成一處理區域，該處理區域對該蒸發器的該出口埠開啟。
  17. 如請求項16所述之基板處理平臺，其中該第一處理腔室進一步包括： 一傳送機械手，該傳送機械手被配置成運載複數個基板，並同時將該等基板傳送進出該基板處理平臺。
  18. 如請求項16所述之基板處理平臺，其中該內部熱遮罩件被加熱。
  19. 如請求項18所述之基板處理平臺，其中該第一處理腔室進一步包括： 一第二致動器，可操作該第二致動器以移動該基板支撐件朝向該蓋。
  20. 如請求項16所述之基板處理平臺，其中該第一處理腔室進一步包括： 一排放埠，該排放埠被定位在該基板支撐件的一中心線的一第一側處，且其中該蒸發器被設置在該基板支撐件的該中心線的一第二側處。
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