JP7066314B2 - 高温蒸気供給システム及び方法 - Google Patents
高温蒸気供給システム及び方法 Download PDFInfo
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- JP7066314B2 JP7066314B2 JP2016187671A JP2016187671A JP7066314B2 JP 7066314 B2 JP7066314 B2 JP 7066314B2 JP 2016187671 A JP2016187671 A JP 2016187671A JP 2016187671 A JP2016187671 A JP 2016187671A JP 7066314 B2 JP7066314 B2 JP 7066314B2
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- 239000000758 substrate Substances 0.000 claims description 71
- 239000006200 vaporizer Substances 0.000 claims description 70
- 239000002243 precursor Substances 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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Description
Claims (13)
- 内部空間を画定するチャンバ本体及びリッドであって、前記リッドがキャップを有するハウジングを支持するように構成された、チャンバ本体及びリッドと、
前記内部空間に配置された基板支持体と、
前記キャップに連結され、処理チャンバの前記内部空間に開放された排出口を有する気化器であって、前記気化器と前記基板支持体との間に画定された処理領域に前駆体ガスを供給するように構成される気化器と、
前記気化器に隣接して配置されたヒータであって、前記気化器を加熱するように構成されるヒータと、
前記基板支持体の中心線の第1の側に位置付けられた排気口であって、前記気化器が、前記基板支持体の前記中心線の第2の側に配置される排気口と
を備える、処理チャンバ。 - 内部空間を画定するチャンバ本体及びリッドであって、前記リッドが、キャップを有するハウジングを支持するように構成され、前記キャップが、前記キャップ及び前記ハウジングの温度を制御するための水冷式ベースプレートを含む、チャンバ本体及びリッドと、
前記内部空間に配置された基板支持体アセンブリと、
熱絶縁物によって前記内部空間内で処理チャンバの前記キャップに連結された気化器であって、前記気化器と前記基板支持体アセンブリとの間に画定された処理領域に前駆体を供給するように構成される気化器と、
前記気化器に隣接して配置されたヒータであって、前記気化器を100℃から600℃の温度まで加熱するように構成されるヒータと
を備える処理チャンバ。 - 前記チャンバ本体が、
水冷式壁と、
水冷式リッドと、
を備える、請求項1又は2に記載の処理チャンバ。 - 前記キャップが水冷式ベースプレートを含む、請求項1に記載の処理チャンバ。
- 前記処理領域に配置された内側熱シールドであって、前記チャンバ本体から間隔を空けて配置され、前記気化器を少なくとも部分的に取り囲み、加熱される、内側熱シールド
を更に備える、請求項2に記載の処理チャンバ。 - 前記処理領域に配置された内側熱シールドであって、前記チャンバ本体から間隔を空けて配置され、前記気化器を少なくとも部分的に取り囲み、加熱される、内側熱シールドと、
前記内側熱シールドに連結されたアクチュエータであって、前記キャップと前記基板支持体との間で前記内側熱シールドを移動させるように構成されたアクチュエータと
を更に備える、請求項1に記載の処理チャンバ。 - 前記基板支持体を前記リッドの方へ移動させるように作動可能なアクチュエータ
を更に備える、請求項1に記載の処理チャンバ。 - 前記気化器の前記排出口が複数の開口を備える、請求項1に記載の処理チャンバ。
- 前記ヒータが、抵抗ヒータ、ハロゲンランプ、発光ダイオード、レーザ、及びフラッシュランプから成る群から選択される、請求項1又は2に記載の処理チャンバ。
- 複数の基板を処理するための基板処理プラットフォームであって、
回転軌道機構と、
前記回転軌道機構周囲でアレイに配置された複数の処理チャンバであって、前記処理チャンバの1つが、
内部空間を画定するチャンバ本体及びリッドであって、前記リッドがキャップを有するハウジングを支持するように構成された、チャンバ本体及びリッドと、
前記内部空間に配置された基板支持体と、
前記キャップに連結され、前記処理チャンバの前記内部空間に開放された排出口を有する気化器であって、前記気化器と前記基板支持体との間に画定された処理領域に前駆体ガスを供給するように構成される気化器と、
前記気化器に隣接して配置されたヒータと、
前記処理領域に配置され、前記チャンバ本体から間隔を空けて配置され、前記気化器を少なくとも部分的に取り囲む内側熱シールドであって、加熱される内側熱シールドと
を更に備える、複数の処理チャンバと、
複数の基板を運び、同時に前記基板処理プラットフォーム内に及び前記基板処理プラットフォームから前記基板を移送するように構成された移送ロボットと
を備える基板処理プラットフォーム。 - 前記処理チャンバが、
水冷式壁と、
水冷式リッドと、
を更に備える、請求項10に記載の基板処理プラットフォーム。 - 前記処理チャンバが、
前記内側熱シールドに連結されたアクチュエータであって、前記キャップと前記基板支持体との間で前記内側熱シールドを移動させるように構成されたアクチュエータ
を更に備える、請求項10に記載の基板処理プラットフォーム。 - 前記処理チャンバが、
前記基板支持体の中心線の第1の側に位置付けられた排気口であって、前記気化器が、前記基板支持体の前記中心線の第2の側に配置される排気口
を更に備える、請求項10に記載の基板処理プラットフォーム。
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