TWI722880B - 用於自我組裝單層製程的化學輸送腔室 - Google Patents

用於自我組裝單層製程的化學輸送腔室 Download PDF

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TWI722880B
TWI722880B TW109113612A TW109113612A TWI722880B TW I722880 B TWI722880 B TW I722880B TW 109113612 A TW109113612 A TW 109113612A TW 109113612 A TW109113612 A TW 109113612A TW I722880 B TWI722880 B TW I722880B
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processing volume
substrate support
cover plate
manifold
heater
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TW109113612A
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TW202028518A (zh
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奇偉 梁
艾德柏 坎
托賓 高夫曼歐斯柏恩
史林尼法斯Ｄ 奈馬尼
魯多維 葛迪
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45517—Confinement of gases to vicinity of substrate
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

於此所述的實施方案涉及用於自我組裝單層（SAM）沉積的設備和方法。於此所述的設備包括具有流體耦合到其上的各種氣相輸送設備的處理腔室。SAM前驅物可經由加熱以將前驅物維持在氣相中的各種設備而輸送到腔室的處理容積。在一個實施方案中，經配置用以輸送SAM前驅物的第一安瓿或蒸發器可流體耦接到處理腔室的處理容積。經配置以輸送與SAM前驅物不同的材料的第二安瓿或蒸發器也可流體耦接到處理腔室的處理容積。

Description

用於自我組裝單層製程的化學輸送腔室
本揭露書的實施方案一般涉及用於處理基板的設備。更具體地，於此所述的實施方案涉及用於自我組裝單層製程的化學輸送室。
可靠地生產半微米和更小的特徵是半導體裝置的下一代大型積體電路（VLSI）和超大型積體電路（ULSI）的關鍵技術挑戰之一。然而，隨著電路技術的限制的推進，VLSI和ULSI技術的縮小尺寸已對處理能力提出了更多的要求。
隨著下一代裝置的電路密度增加，互連件(諸如通孔、溝槽、接點、閘極結構和其它特徵)的寬度以及在它們之間的介電材料的寬度減小到45nm和32nm的尺寸以並超出。為了能夠製造下一代裝置和結構，經常利用半導體晶片中的特徵的三維（3D）堆疊。特別地，鰭狀場效應電晶體（FinFET）通常用以在半導體晶片中形成三維（3D）結構。藉由以三維佈置電晶體而不是傳統的二維，可將多個電晶體放置在非常接近彼此的積體電路（IC）中。隨著電路密度和堆疊增加，在先前沉積的材料上選擇性地沉積後續材料的能力變得重要。
自我組裝單層（SAM）可用作遮罩材料，以改善隨後的材料沉積選擇性。SAM通常是表面化學依賴性的，且可優先地形成在各種材料上。然而，用於沉積SAM的當前設備通常具有緩慢的沉積速率和將在蒸氣狀態中的SAM可靠地輸送到用於沉積在基板上的處理容積的能力。例如，當前的蒸氣沉積系統使用加熱的SAM分子溶液的蒸氣壓力以非常低的壓力（如，2mTorr）輸送SAM分子，以將化學物質曝露於基板。這種低蒸氣壓力導致氣相中的低濃度且是時間密集的，在某些例子中需花費幾天。因此，需花費大量時間以形成不具有針孔的密集的高品質的SAM膜。
因此，本領域需要的是用於基板處理的改進的設備。
在一個實施方案中，提供了一種基板處理設備。設備包括界定處理容積的腔室本體，設置在處理容積內的基板支撐件及與基板支撐件相對設置的噴頭。蓋板可耦接到腔室本體，背板可設置在蓋板和噴頭之間，且注射組件可耦接到與背板相對的蓋板。注射組件可經由背板和噴頭與處理容積流體連通。第一蒸氣產生組件可與注射組件流體連通，且第一蒸氣產生組件可經配置以在蒸氣狀態中將自我組裝單層（SAM）前驅物輸送到處理容積。第一加熱輸送導管可設置在第一蒸氣產生組件和注射組件之間。第二蒸氣產生組件可與注射組件流體連通，且第二蒸氣產生組件可經配置以在蒸氣狀態中將共反應物輸送到處理容積。第二加熱輸送導管可設置在第二蒸氣產生組件和注射組件之間。
在另一個實施方案中，提供了一種基板處理設備。設備包括界定處理容積的腔室本體，設置在處理容積中的基板支撐件和設置在與基板支撐件相對的處理容積中的加熱器。歧管可耦接到腔室本體，且歧管可延伸到在基板支撐件和加熱器之間的處理容積中。蓋板可耦接到腔室本體，且加熱器可設置在基板支撐件和蓋板之間。流體導管可延伸通過蓋板和在加熱器的徑向外側的歧管，且蒸氣產生組件也可耦接到腔室本體。蒸氣產生組件包括經由流體導管與處理容積流體連通的注射器。排氣口可設置在與注射器相對的歧管中，且注入到處理容積中的蒸氣可從注射器流到排氣口。
在又另一個實施方案中，提供了一種基板處理設備。設備包括界定處理容積的腔室本體，設置在處理容積中的基板支撐件和設置在與基板支撐件相對的處理容積中的加熱器。蓋板可耦接到腔室本體，且加熱器可設置在基板支撐件和蓋板之間。蒸氣產生組件可耦接到蓋板的中心區域，且蒸氣產生組件可包括與處理容積流體連通的注射器。SAM前驅物源可經由蒸氣產生組件與處理容積流體連通，且共反應物前驅物源也可經由蒸氣產生組件與處理容積流體連通。
於此所述的實施方案涉及用於自我組裝單層（SAM）沉積的設備和方法。於此所述的設備包括具有流體耦合到其上的各種氣相輸送設備的處理腔室。SAM前驅物可經由加熱以將前驅物維持在氣相中的各種設備而輸送到腔室的處理容積。在一個實施方案中，經配置用以輸送SAM前驅物的第一安瓿或蒸發器可流體耦接到處理腔室的處理容積。經配置以輸送與SAM前驅物不同的材料的第二安瓿或蒸發器也可流體耦接到處理腔室的處理容積。
顯示在圖式中的許多細節、尺寸、角度和其他特徵僅僅是特定實施方案的說明。因此，其他實施方案可具有其他細節、部件、尺寸、角度和特徵，而不背離本揭露書的精神或範圍。此外，可實施方案本揭露書的進一步實施方案，而不需要以下所述的幾個細節。
如於此所使用的，「自我組裝單層」（SAM）通常是指附接（如，藉由化學鍵結）到表面且相對於表面且甚至相對於彼此而採用優選取向的分子層。SAM通常包括雙親分子的有機層，其中分子的一端，「頭部基」對於基板顯示特定、可逆的親合力。頭部基的選擇將取決於SAM的應用，其中SAM化合物的類型基於所使用的基板。通常，頭部基連接到烷基鏈，其中尾部或「末端」可被官能化，(例如)以改變潤濕性和界面性質。形成SAM的分子將選擇性地附接在另一種材料（如，金屬與介電）上的一種材料上，且若具有足夠的密度，則可成功地操作隨後的沉積，從而允許選擇性地沉積在未塗覆有SAM的材料上。
第1圖顯示了根據於此所述的一個實施方案的處理腔室100的剖視圖。腔室100包括界定處理容積110的腔室本體102。基板支撐件104可設置在處理容積110中，且噴頭112可設置成與基板支撐件104相對。泵襯墊150可耦接到腔室本體102且可設置在基板支撐件104的徑向外側。蓋板124可耦接到噴頭112並藉由腔室本體102而支撐。背板114可設置在噴頭112和蓋板124之間。注射組件126可耦接到蓋板124，且注射組件可與處理容積110流體連通。
腔室本體102可由適合於承受高達約300℃的溫度的材料所製成。例如，腔室本體102可由鋁、其合金、不銹鋼及其它合適的金屬材料所形成。狹縫閥開口160可形成在腔室本體102中，以允許基板進入和離開處理容積110。狹縫閥門158可耦接到腔室本體102，且可為可移動的，以密封和解除密封狹縫閥開口160。在一個實施方案中，狹縫閥門158可由與腔室本體102相同的材料所形成。替代地，狹縫閥門158可由與腔室本體102不同的材料所形成。
基板支撐件104可以可移動地設置在處理容積110內。如圖所示，基板支撐件104設置在升高的處理位置。可降低基板支撐件104，使得基板支撐件104的基板支撐表面與狹縫閥開口160共平面或在狹縫閥開口160之下方，以允許將基板定位在基板支撐件104上。基板支撐件可由適於在升高的加工溫度下操作的材料所形成，且可為金屬材料，陶瓷材料或其組合。例如，基座可由鋁，鋁合金，不銹鋼，或陶瓷材料（諸如氧化鋁或氮化鋁）所形成。
基板支撐件104可具有設置在其中的加熱構件106，且加熱構件106可耦接到功率源154。功率源154還可提供用於在處理容積110內升高和降低基板支撐件104的功率。加熱構件106可為電阻加熱器或類似者，且可以任何期望的取向而設置在基板支撐件104內。例如，加熱構件106可以螺旋取向或經配置以均勻地加熱基板支撐件的其它合適的取向(諸如，歪曲路徑取向)而形成在基板支撐件104中。在一個實施方案中，加熱構件106可經配置以將基板支撐件104加熱至在約100℃至約300℃之間的溫度。
泵襯墊150經調整尺寸以圍繞基板支撐件104和處理容積110。類似於基板支撐件104，泵襯墊150可由金屬材料，陶瓷材料，或其組合所形成。例如，基座可由鋁，鋁合金，不銹鋼，或陶瓷材料（諸如氧化鋁或氮化鋁）所形成。泵襯墊150可具有形成在其中的開口162，以允許基板進入和離開處理容積110。開口162可定位成與狹縫閥開口160基本上共面。複數個孔152可沿著泵襯墊150的內徑而形成。複數個孔152提供氣體和其它材料從處理容積110排出到排氣件。因此，處理容積110經由泵襯墊150的孔152與排氣件156流體連通。
與基板支撐件104相對設置的噴頭112可直接或間接地耦接到腔室本體102並藉由腔室本體102所支撐。噴頭112可由與用於基板支撐件104和泵襯墊150的材料類似的材料所形成。噴頭112可具有形成在其中的複數個第一通道121，複數個第一通道121從處理容積110延伸到形成在噴頭112和背板114之間的第一集氣室120。第一通道121使得能夠流體連通，且將蒸氣從第一集氣室120傳送到處理容積110。
噴頭襯墊108也可設置在處理容積110中。噴頭襯墊108可由與噴頭112相同或相似的材料所形成，且噴頭襯墊可耦接到噴頭112。在一個實施方案中，噴頭襯墊108是環狀體。噴頭襯墊108可具有基本上類似於基板支撐件104的外徑的內徑。噴頭襯墊108的內徑也可經調整尺寸成使得噴頭襯墊108的最內表面在第一通道121的徑向外側，以便不干擾蒸氣輸送到處理容積110。噴頭襯墊108佔據在處理容積110內的實體空間，並減少處理容積110的容積，從而減少在基板上形成SAM分子所需的SAM前驅物的量。因此，可提高SAM形成製程的效率。
噴頭112還可具有設置在其中的加熱器116。加熱器116可為類似的電阻加熱器，且可設置在第一通道121的徑向外側的噴頭112內。在一個實施方案中，加熱器116可以圓周取向而設置在噴頭112內，圓周取向基本上圍繞第一通道121。加熱器116可耦接到功率源118，以能夠電阻加熱噴頭112。在一個實施方案中，噴頭112可經配置以加熱到在約150℃和約250℃之間的溫度。
設置在噴頭和蓋板124之間且部分地界定第一集氣室120的背板114可具有設置在其中的複數個第二通道123。第二集氣室122可形成在背板114和蓋板124之間。通道123使得第二集氣室122能夠與第一集氣室120流體連通。複數個第三通道125可形成在第二集氣室122和注射組件126之間的蓋板124中。
注射組件126經配置以將蒸發的材料輸送到處理容積110。在操作中，蒸發的材料(諸如SAM前驅物及/或共反應物前驅物)通過複數個第三通道125從注射組件126輸送到第二集氣室122。蒸發的材料通過背板114的複數個第二通道123行進到第一集氣室120且通過噴頭112的複數個第一通道121行進到處理容積110。在處理基板之後，蒸發的材料和其它流出物可經由排氣件156通過泵襯墊150的孔152從處理容積110移除。
注射組件126包括耦接到蓋板124的外殼127和耦接到外殼127的注射器128。注射器128可設置在外殼127內，且注射器128可包括第三集氣室148。在一個實施方案中，第三集氣室148可能是漏斗狀。第三集氣室148的形狀可經配置以在輸送到處理容積110之前促進和鼓勵蒸發的材料的混合。雖然第三集氣室148被顯示為漏斗形，但也可考慮促進蒸氣化材料的混合的其它形狀。
第一安瓿130可經由第一導管132而耦接到注射組件126。更具體地，第一安瓿130可經由第一導管132與注射器128的第三集氣室148流體連通。第一導管132可從第一安瓿130延伸到第三集氣室148。第一加熱器護套134可圍繞設置在注射器128之外的第一導管132的部分上的第一導管132。在一個實施方案中，第一加熱器護套134可被電阻式加熱以將第一導管132的溫度保持在約50℃至約250℃之間。
第一安瓿130經配置以將SAM前驅物蒸發並輸送到處理容積110。根據於此所述的實施方案所使用的合適的SAM前驅物的例子，除了具有適合於在半導體製造製程中阻擋後續沉積材料的沉積的特質的其它SAM前驅物材料之外，包括於此之後所描述的材料(包括其組合物，混合物和移植物)。在一個實施方案中，SAM前驅物可為羧酸材料，諸如甲基羧酸、乙基羧酸、丙基羧酸、丁基羧酸、戊基羧酸、己基羧酸、庚基羧酸、辛基羧酸、壬基羧酸、癸基羧酸、十一烷基羧酸、十二烷基羧酸、十三烷基羧酸、十四烷基羧酸、十五烷基羧酸、十六烷基羧酸、十七烷基羧酸、十八烷基羧酸和十九烷基羧酸。
在一個實施方案中，SAM前驅物可為膦酸材料，諸如甲基膦酸、乙基膦酸、丙基膦酸、丁基膦酸、戊基膦酸、己基膦酸、庚基膦酸、辛基膦酸、壬基膦酸、癸基膦酸、十一烷基膦酸、十二烷基膦酸、十三烷基膦酸、十四烷基膦酸、十五烷基膦酸、十六烷基膦酸、十七烷基膦酸、十八烷基膦酸和十九烷基膦酸。
在另一個實施方案中，SAM前驅物可為硫醇材料，諸如甲硫醇、乙硫醇、丙硫醇、丁硫醇、戊硫醇、己硫醇、庚硫醇、辛硫醇、壬硫醇、癸硫醇、十一烷硫醇、十二烷硫醇、十三烷硫醇、十四烷硫醇、十五烷硫醇、十六烷硫醇、十七烷硫醇、十八烷硫醇和十九烷硫醇。
在另一個實施方案中，SAM前驅物可為甲矽烷基胺材料，諸如三（二甲基胺基）甲基矽烷、三（二甲基胺基）乙基矽烷、三（二甲基胺基）丙基矽烷、三（二甲基胺基）丁基矽烷、三（二甲基胺基）戊基矽烷、三（二甲基胺基）己基矽烷、三（二甲基胺基）庚基矽烷、三（二甲基胺基）辛基矽烷、三（二甲基胺基）壬基矽烷、三（二甲基胺基）癸基矽烷、三（二甲基胺基）十一烷基矽烷、三（二甲基胺基）十二烷基矽烷、三（二甲基胺基）十三烷基矽烷、三（二甲基胺基）十四烷基矽烷、三（二甲基胺基）十五烷基矽烷、三（二甲基胺基）十六烷基矽烷、三（二甲基胺基）十七烷基矽烷、三（二甲基胺基）十八烷基矽烷和三（二甲基胺基）十九烷基矽烷。
在另一個實施方案中，SAM前驅物可為氯矽烷材料，諸如甲基三氯矽烷、乙基三氯矽烷、丙基三氯矽烷、丁基三氯矽烷、戊基三氯矽烷、己基三氯矽烷、庚基三氯矽烷、辛基三氯矽烷、壬基三氯矽烷、癸基三氯矽烷、十一烷基三氯矽烷、十二烷基三氯矽烷、十三烷基三氯矽烷、十四烷基三氯矽烷、十五烷基三氯矽烷、十六烷基三氯矽烷、十七烷基三氯矽烷、十八烷基三氯矽烷和十九烷基三氯矽烷。
在另一個實施方案中，SAM前驅物可為氧基矽烷材料，諸如甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、戊基三甲氧基矽烷、戊基三乙氧基矽烷、己基三甲氧基矽烷、己基三乙氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、壬基三甲氧基矽烷、壬基三乙氧基矽烷、癸基三甲氧基矽烷、癸基三乙氧基矽烷、十一烷基三甲氧基矽烷、十一烷基三乙氧基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽烷、十三烷基三甲氧基矽烷、十三烷基三乙氧基矽烷、十四烷基三甲氧基矽烷、十四烷基三乙氧基矽烷、十五烷基三甲氧基矽烷、十五烷基三乙氧基矽烷、十六烷基三甲氧基矽烷、十六烷基三乙氧基矽烷、十七烷基三甲氧基矽烷、十七烷基三乙氧基矽烷、十八烷基三甲氧基矽烷、十八烷基三甲氧基矽烷、十九烷基三甲氧基矽烷和十九烷基三乙氧基矽烷。
在另一個實施方案中，SAM前驅物可具有氟化R基團，諸如（1,1,2,2-全氟癸基）三氯矽烷、三氯（1,1,2,2-全氟辛基）矽烷、(十三氟-1,1,2,2-四氫辛基）三氯矽烷、（十三氟-1,1,2,2-四氫辛基）三乙氧基矽烷、（十三氟-1,1,2,2-四氫辛基）甲基二氯矽烷、（十三氟-1,1,2,2-四氫辛基）二甲基氯矽烷和（十七氟-1,1,2,2-四氫癸基）三氯矽烷等。
第二安瓿136可經由第二導管138而耦接到注射組件126。更具體地，第二安瓿136可經由第二導管138與注射器128的第三集氣室148流體連通。第二導管138可從第二安瓿136延伸到第三集氣室148。第二加熱器護套140可圍繞設置在注射器128之外的第二導管138的部分上圍繞第二導管138。在一個實施方案中，第二加熱器護套140可被電阻加熱，以將第二導管138的溫度保持在約50℃和約250℃之間。
第二安瓿136經配置以蒸發並將共反應物前驅物輸送到處理容積110。共反應物前驅物的合適例子包括羥基部分材料(諸如環境空氣，水溶液或蒸氣)、過氧化氫溶液或蒸氣、有機醇溶液或蒸氣(諸如甲醇、異丙醇、乙醇和二醇)等。氫氣和氧氣也可組合使用以形成羥基部分。預期可根據於此所述的實施方案利用其它非羥基部分前驅物。非羥基部分前驅物可包括氮氣、（二）異氰酸酯、硫化氫和氨等。
在一個實施方案中，清潔氣體源142可經由第三導管144耦接到注射組件126。更具體地，清潔氣體源142可經由第三導管144而與注射器128的第三集氣室148流體連通。第三導管144可從清潔氣體源142延伸到第三集氣室148。第三加熱器護套146可任選地圍繞設置在注射器128之外的第三導管144的部分上的第三導管144。在一個實施方案中，可電阻式加熱第三加熱器護套146，以將第三導管144的溫度保持在約50℃和約250℃之間。由清潔氣體源142所提供的氣體可包括含氯材料、含氟材料和適用於清潔處理腔室100的部件的其它材料。
在另一個實施方案中，清潔氣體源142可為遠程電漿源。在該實施方案中，遠程電漿源可激勵清潔氣體以產生自由基和/或離子，並將電漿產物輸送到處理容積110。在一個實施方案中，遠程電漿源可為可選的。
在另一個實施方案中，清潔氣體源142可為載氣源。可使用載氣來促進氣相SAM前驅物的輸送，且取決於處理容積110，載氣可以適於促進將SAM前驅物從第三集氣室148通過第三通道125，通過第二集氣室122和第二通道123，及通過第一集氣室120和第一通道121而輸送到處理容積110的流率而輸送。合適的載氣包括通常在促進SAM分子輸送到基板表面的SAM吸附條件下為惰性的氣體(諸如惰性氣體或類似者)。
加熱的噴頭112和加熱的基板支撐件104可將處理容積110加熱至在約50℃至約250℃之間的溫度。安瓿130、136和導管132、138可被加熱到類似的溫度。噴頭襯墊108、背板114、蓋板124及注射組件126也可藉由噴頭112而導電地加熱。SAM前驅物沿著行進的流動路徑的溫度保持在升高的溫度，以防止在各種設備上濃縮蒸發的SAM前驅物。處理容積110還可保持在低於約600托的壓力，這也促進保持SAM前驅物和共反應物前驅物的蒸氣狀態。
在操作的實施方案中，SAM前驅物可連續地通過處理容積110從第一安瓿130而流到排氣件156。在這個實施方案中，處理容積110的壓力可保持在等壓狀態。在另一個實施方案中，SAM前驅物可在從處理容積110排出之前填充處理容積110並保持在處理容積110中一段時間。在另一個實施方案中，共反應物前驅物可連續地流到處理容積110，或以不連續的方式(諸如脈衝的方式)而提供。在另一個實施方案中，SAM前驅物和共反應物前驅物可以交替的方式連續地或靜態地提供到處理容積110。
第2A圖顯示了根據於此所述的一個實施方案的第1圖的噴頭112的透視圖。在所示的取向上，具有第一通道121形成在其中的噴頭的表面206是鄰近且至少部分地界定處理容積110的表面。還顯示了從噴頭112延伸的加熱器116。連接構件202(諸如導熱線或導電線，或類似者)可從加熱器116延伸到功率源118（未顯示）。
第2B圖顯示了根據於此所述的一個實施方案沿著線2B-2B所截取的第2A圖的噴頭112的剖視圖。在所示的實施方案中，加熱器116設置在噴頭112內。可在噴頭112的主體中加工有孔隙，且加熱器116可插入噴頭112中。在插入或放置加熱器116之後，蓋204可耦接到與表面206相對的噴頭112。蓋204可將加熱器116包裝在噴頭112內，且防止加熱器116曝露於各種處理環境。
第3A圖顯示了根據於此所述的一個實施方案的噴頭襯墊108的透視圖。如圖所示，噴頭襯墊108主要是環形的。可設想可利用幾何形狀的各種其他實施方案，諸如環形、矩形和多邊形。
第3B圖顯示了根據於此所述的一個實施方案沿著線3B-3B所截取的第3A圖的噴頭襯墊108的剖視圖。噴頭襯墊108包括第一表面310和第二表面308，第二表面308正向地設置到第一表面310並從第一表面310延伸。第三表面306正向地設置到第二表面308，並從第二表面308徑向向內延伸。在一個實施方案中，第一表面310和第三表面基本上平行。第四表面314正向地設置到第三表面306並從第三表面306延伸，第三表面306平行於第二表面308。第五表面304正向地設置到第四表面314上並從第四表面314延伸。第六表面302正向於第五表面304而設置並從第五表面304延伸到第一表面310。
第一表面310可設置成鄰近並接觸腔室100內的噴頭112。第二表面308可設置成鄰近並接觸泵襯墊150。第二表面308界定噴頭襯墊108的外徑，且第二表面308可具有小於泵襯墊150的內徑的直徑。第六表面302界定噴頭襯墊108的內徑，且第六表面302可設置在第一通道121的徑向外側。一或多個孔312可形成在噴頭襯墊108中且在第一表面310和第五表面304之間延伸。孔312可提供用於耦接設備(諸如螺釘或類似者)，以將噴頭襯墊108固定到噴頭112。
第4圖顯示了根據於此所述的一個實施方案的泵襯墊150的透視圖。如圖所示，泵襯墊150主要是環形的。形成在泵襯墊150中的開口162可沿圓周在圓周的約25％至約50％之間延伸。可設想開口162可具有足夠的尺寸以允許基板和機器人傳送葉片通過其中。孔152可沿著界定泵襯墊150的內徑的內表面402而設置，且孔152可延伸通過泵襯墊150到泵襯墊150的一部分的外徑。儘管未顯示，孔152完全地延伸通過泵襯墊150，這在第1圖中更清楚地顯示。
第5A圖顯示了根據於此所述的一個實施方案的處理腔室500的剖視圖。腔室500包括界定處理容積506的腔室本體502。基板支撐件504可設置在處理容積506內，且加熱器514可設置在與基板支撐件504相對的處理容積506中。蓋板516可耦接到腔室本體502，且蒸氣產生組件518可耦接到蓋板516。
腔室本體502可由與腔室本體102相同或相似的材料所形成。類似地，基板支撐件504可由與基板支撐件104相同或相似的材料所形成。基板支撐件504包括設置在其中的加熱構件508。加熱構件508可耦接到功率源510且經配置以將基板支撐件504加熱到在約100℃和約500℃之間的溫度。
與基板支撐件504相對設置的加熱器514可進一步界定在加熱器514和基板支撐件504之間的處理容積506。加熱器514可耦接到功率源528，且經配置以將加熱器514加熱至在約100℃至約500℃之間的溫度。處理容積506的溫度可在處理期間以在約50℃至約500℃之間的溫度保持，諸如在約100℃至約250℃之間。氣體源526還可耦接到加熱器514，且氣體源526可與處理容積506流體連通。在一個實施方案中，氣體源526可經配置以將共反應物前驅物輸送到處理容積506。替代地，氣體源526可經配置以根據所欲的實施方案而將淨化氣體、載氣或清潔氣體輸送到處理容積506。
蒸氣產生組件518(諸如蒸發器，直接液體注射蒸發器，或類似者)可耦接到蓋板516。蒸氣產生組件518耦接到處理容積的徑向外側的蓋板516。蒸氣產生組件518的位置及蒸氣注入到處理容積506的位置提供基板到SAM前驅物的交叉流類型的曝露。蒸氣產生組件518包括蒸發器522和從蒸發器522延伸的注射器520。蒸發器522可耦接到SAM前驅物源524且接收液體形式的SAM前驅物以進行蒸發。蒸發器522可保持在約100℃和約500℃之間的溫度以蒸發SAM前驅物，且蒸發器522的溫度可至少部分地藉由SAM前驅物的蒸氣壓力而確定。
蒸發的SAM前驅物可離開蒸發器522且行進通過注射器520。注射器520從蒸發器522延伸通過蒸氣產生組件518且延伸到蓋板516，蒸氣產生組件518可藉由加熱器護套512而保持在升高的溫度，以維持SAM前驅物處於蒸氣狀態。雖然顯示了單一注射器，但是可想到附加的注射器，諸如第6圖中所示。SAM前驅物的行進路徑將關於第5B圖而更詳細地討論。
歧管536可與基板支撐件504和加熱器514的徑向外側的腔室本體502耦接。歧管536可由與基板支撐件504和加熱器514相同或類似材料而形成。歧管536經調整尺寸以界定處理容積506，使得歧管536的內徑大於基板支撐件504的外徑和加熱器514的外徑。蒸氣可通過歧管536從注射器520流到與注射器520相對設置的出口530。排氣件532還可耦接到處理容積506並與處理容積506流體連通。更具體地，排氣件532可經由出口530而與處理容積506流體連通。因此，處理容積的流出物可通過出口530從處理容積506排出到排氣件532。
熱絕緣件534可耦接到蓋板516，位於加熱器514的徑向外側。熱絕緣件534可經調整尺寸以類似於歧管536，且可設置在歧管536和蓋板516之間。熱絕緣件534還可耦接到腔室本體502或與腔室本體502接觸。熱絕緣件534可由熱絕緣材料(諸如陶瓷材料或類似者)所形成，其被配置以減小以防止來自基板支撐件504、加熱器514和歧管536的熱傳導到蓋板516。在一個實施方案中，熱絕緣件534可為任選的。在這種實施方案中，氣隙可運作為蓋板516和基板支撐件504、加熱器514和歧管536之間的熱中斷。
第5B圖顯示了根據於此所述的一個實施方案的第5A圖的處理腔室500的放大部分。注射器520延伸到蓋板516且與形成在蓋板516中的第一管道548相鄰。第二管道546可形成在與第一管道548相鄰並對準的熱絕緣件534中。第三管道544可形成在與第二管道546相鄰並對準的歧管536中。第三管道544可從熱絕緣件534的第二管道546延伸到鄰近處理容積506設置的出口542。出口542可經定位，使得當基板支撐件504處於升高的處理位置時，從蒸氣產生組件518所提供的蒸氣進入在基板支撐件504和加熱器514之間的處理容積506。因此，來自蒸氣產生組件518的蒸氣通過注射器520、第一管道548、第二管道546和第三管道544，並通過出口542行進到處理容積506。
第5C圖顯示了根據於此所述的一個實施方案的第5A圖的處理腔室500的基板支撐件504和歧管536的平面圖。如圖所示，第三管道544和出口542設置成與出口530相對。因此，離開出口542的蒸氣跨越設置在基板支撐件504上的基板行進到出口530。出口530可形成在歧管536中，且曲線地延伸小於歧管536的圓周的一半的距離。還可在基板支撐件504中形成複數個孔540，以允許舉升銷延伸通過其中。
第6圖顯示了根據於此所述的一個實施方案的處理腔室600的剖視圖。腔室600包括界定處理容積606的腔室本體602。基板支撐件604可設置在處理容積606內，且蓋板616可耦接到與基板支撐件604相對的腔室本體602。蒸氣產生組件618可耦接到蓋板616。
腔室本體602可由與腔室本體502相同或相似的材料所形成。類似地，基板支撐件604可由與基板支撐件504相同或相似的材料所形成。基板支撐件604包括設置在其中的加熱構件608。加熱構件608可耦接到功率源610且經配置以將基板支撐件604加熱到在約100℃和約500℃之間的溫度。
蒸氣產生組件618(諸如蒸發器，直接液體注射蒸發器或類似者)可與鄰近處理容積606的中心的蓋板616耦接。蒸氣產生組件618的位置和將蒸氣注入到處理容積606的位置提供基板到SAM前驅物的上到下類型的曝露。蒸氣產生組件618包括蒸發器622和從蒸發器622延伸的一或多個注射器612、614。蒸發器622可耦接到SAM前驅物源624並接收液體形式的SAM前驅物以進行蒸發。蒸發器622可保持在約100℃和約500℃之間的溫度，以蒸發SAM前驅物，且蒸發器622的溫度可至少部分地藉由SAM前驅物的蒸氣壓力而確定。
蒸發的SAM前驅物可離開蒸發器622且通過注射器612、614的一個或兩個而行進。注射器612、614從蒸發器622延伸通過蒸氣產生組件618，並延伸到蓋板616，蒸氣產生組件618可藉由加熱器護套628而保持在升高的溫度，以將SAM前驅物保持在蒸氣狀態。在一個實施方案中，來自源624的SAM前驅物可經由注射器612通過出口630而引入到處理容積。氣體源626還可與處理容積606流體連通。氣體源626可將液體或氣體引入到蒸氣產生組件618，且所產生的蒸氣可經由注射器614和出口630而被引入處理容積606。在一個實施方案中，氣體源626可提供共反應物前驅物。在另一個實施方案中，氣體源626可根據所欲的實施方案而提供淨化氣體，載氣或清潔氣體。
處理容積606還可與排氣件632流體連通。因此，處理容積流出物可經由排氣件632從處理容積606排出。兩個腔室500和600可保持在小於約600托的壓力。在腔室500、600中進行的製程可為等壓的或非等壓的。類似地，在腔室500、600中進行的製程可為等溫的或非等溫的。
雖然前述內容涉及本揭露書的實施方案，但是本揭露書的其他和進一步的實施方案可經設計而不背離本揭露書的基本範圍，且本揭露書的範圍藉由以下的申請專利範圍而決定。
100:腔室 102:腔室本體 104:基板支撐件 106:加熱構件 108:噴頭襯墊 110:處理容積 112:噴頭 114:背板 116:加熱器 118:功率源 120:第一集氣室 121:第一通道 122:第二集氣室 123:第二通道 124:蓋板 125:第三通道 126:注射組件 127:外殼 128:注射器 130:第一安瓿 132:第一導管 134:第一加熱器護套 136:第二安瓿 138:第二導管 140:第二加熱器護套 142:清潔氣體源 144:第三導管 146:第三加熱器護套 148:第三集氣室 150:泵襯墊 152:孔 154:功率源 156:排氣件 158:狹縫閥門 160:狹縫閥開口 162:開口 202:連接構件 204:蓋 206:表面 302:第六表面 304:第五表面 306:第三表面 308:第二表面 310:第一表面 312:孔 314:第四表面 402:內表面 500:腔室 502:腔室本體 504:基板支撐件 506:處理容積 508:加熱構件 510:功率源 512:加熱器護套 514:加熱器 516:蓋板 518:蒸氣產生組件 520:注射器 522:蒸發器 524:SAM前驅物源 526:氣體源 528:功率源 530:出口 532:排氣件 534:熱絕緣件 536:歧管 540:孔 542:出口 544:第三管道 546:第二管道 548:第一管道 600:腔室 602:腔室本體 604:基板支撐件 606:處理容積 608:加熱構件 610:功率源 612:注射器 614:注射器 616:蓋板 618:蒸氣產生組件 622:蒸發器 624:源 626:氣體源 628:加熱器護套 630:出口 632:排氣件
使得可詳細地理解本揭露書的以上所載的特徵的方式，可藉由參考實施方案而獲得對簡要概述於上的本揭露書的更具體的描述，其中一些實施例顯示在附隨的圖式中。然而，應當注意附隨的圖式顯示了示例性實施方案，且因此不被認為是限制其範圍，可承認其他等效的實施方案。
第1圖顯示了根據於此所述的一個實施方案的處理腔室的剖視圖。
第2A圖顯示了根據於此所述的一個實施方案的第1圖的處理腔室的噴頭的透視圖。
第2B圖顯示了根據於此所述的一個實施方案沿著線2B-2B所截取的第2A圖的噴頭的剖視圖。
第3A圖顯示了根據於此所述的一個實施方案的第1圖的處理腔室的噴頭襯墊的透視圖。
第3B圖顯示了根據於此所述的一個實施方案沿著線3B-3B所截取的第3A圖的噴頭襯墊的剖視圖。
第4圖顯示了根據於此所述的一個實施方案的第1圖的處理腔室的泵襯墊的透視圖。
第5A圖顯示了根據於此所述的一個實施方案的處理腔室的剖視圖。
第5B圖顯示了根據於此所述的一個實施方案的第5A圖的處理腔室的放大部分。
第5C圖顯示了根據於此所述的一個實施方案的第5A圖的處理腔室的基板支撐件和歧管的平面圖。
第6圖顯示了根據於此所述的一個實施方案的處理腔室的剖視圖。
為促進理解，在可能的情況下，使用相同的元件符號來表示共用於圖式的相同元件。可設想一個實施方案的元件和特徵可有益地併入到其他實施方案中，而無需進一步的敘述。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
500:腔室
502:腔室本體
504:基板支撐件
506:處理容積
508:加熱構件
510:功率源
512:加熱器護套
514:加熱器
516:蓋板
518:蒸氣產生組件
520:注射器
522:蒸發器
524:SAM前驅物源
526:氣體源
528:功率源
530:出口
532:排氣件
534:熱絕緣件
536:歧管

Claims (20)

  1. 一種基板處理設備，包含： 一基板支撐件； 一加熱器，相對於該基板支撐件而設置； 一歧管，設置在該基板支撐件和該加熱器的徑向外側，該基板支撐件和該加熱器在它們之間界定一處理容積，且該歧管界定該處理容積；及 一蒸汽產生組件，經由形成在該歧管中的一第一通道與該處理容積流體連通，該蒸汽產生組件包含： 一蒸發器；及 一注射器，從該蒸發器延伸，該注射器與形成在該歧管中的該通道流體連通。
  2. 如請求項1所述之設備，其中在該歧管中形成的該通道包含鄰近該處理容積設置的一第一出口。
  3. 如請求項2所述之設備，其中該歧管包含與相對於該第一出口而設置的一第二出口。
  4. 如請求項3所述之設備，其中該第一出口和該第二出口配置成產生穿過該處理容積的流體的一交叉流。
  5. 如請求項3所述之設備，其中該第二出口曲線地延伸小於該歧管的一圓周的一半的一距離。
  6. 如請求項1所述之設備，進一步包含： 一蓋板；及一熱絕緣件，設置在該蓋板和該歧管之間。
  7. 如請求項6所述之設備，其中該熱絕緣件包含與形成在該歧管中的該第一通道對準的一第二通道。
  8. 如請求項7所述之設備，其中該蓋板包含與形成在該熱絕緣件中的該第二通道對準的一第三通道。
  9. 如請求項8所述之設備，其中該注射器延伸到與該蓋板中形成的該第三通道相鄰的該蓋板。
  10. 如請求項1所述之設備，其中該基板支撐件包含設置在其中的一加熱構件。
  11. 如請求項1所述之設備，其中該蒸氣產生組件是一直接液體注射蒸發器。
  12. 如請求項1所述之設備，其中該蒸氣產生組件包含一加熱器護套。
  13. 如請求項1所述之設備，其中該處理容積配置成維持在小於600托的一壓力下。
  14. 如請求項1所述之設備，其中該蒸氣產生組件進一步包含： 一第二注射器，從該蒸發器延伸。
  15. 如請求項1所述之設備，進一步包含： 一排氣件，經由形成在該歧管中的該第二出口與該處理容積流體連通。
  16. 如請求項6所述之設備，進一步包含： 一腔室主體，耦接到該蓋板並圍繞該基板支撐件。
  17. 一種基板處理設備，包含： 一腔室主體，界定一處理容積；一基板支撐件，設置在該處理容積中；一加熱器，設置在該處理容積中，與該基板支撐件相對；一蓋板，耦接到該腔室主體，其中該加熱器設置在該基板支撐件與該蓋板之間；及一蒸氣產生組件，耦接到該蓋板的一中央區域，該蒸氣產生組件包含：一蒸發器；及複數個注射器，從該蒸發器延伸並經由形成在該蓋板中的多個出口與該處理容積流體連通。
  18. 如請求項17所述之設備，其中該蒸氣產生組件包含一加熱器護套。
  19. 如請求項17所述之設備，其中該處理如積配置成維持在小於600托的一壓力下。
  20. 如請求項17所述之設備，其中該蒸發器配置成維持在100℃和500℃之間的一溫度下。
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