CN109417042B - 用于自组装单层工艺的化学输送腔室 - Google Patents

用于自组装单层工艺的化学输送腔室 Download PDF

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CN109417042B
CN109417042B CN201780025455.0A CN201780025455A CN109417042B CN 109417042 B CN109417042 B CN 109417042B CN 201780025455 A CN201780025455 A CN 201780025455A CN 109417042 B CN109417042 B CN 109417042B
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disposed
processing volume
substrate support
showerhead
vapor
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CN109417042A (zh
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梁奇伟
阿迪卜·汗
托宾·卡芙曼·奥斯本
斯里尼瓦斯·D·内曼尼
卢多维克·戈代
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45502—Flow conditions in reaction chamber
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Abstract

本文所述的实施方案涉及用于自组装单层(self‑assembled monolayer,SAM)沉积的设备和方法。本文所述的设备包括处理腔室，具有流体耦合到处理腔室上的各种气相输送设备。SAM前驱物可经由经加热以将前驱物维持在气相中的各种设备而输送到腔室的处理容积。在一个实施方案中，经构造以用于输送SAM前驱物的第一安瓿或蒸发器可流体耦接到处理腔室的处理容积。经构造以输送与SAM前驱物不同的材料的第二安瓿或蒸发器也可流体耦接到处理腔室的处理容积。

Description

用于自组装单层工艺的化学输送腔室
技术领域
本公开内容的实施方案一般涉及用于处理基板的设备。更具体地，本文所述的实施方案涉及用于自组装单层工艺的化学输送腔室。
背景技术
可靠地生产半微米和更小的特征是半导体装置的下一代超大型集成电路(verylarge scale integration,VLSI)和特大型集成电路(ultra large scale integration,ULSI)的关键技术挑战之一。然而，随着电路技术的限制的推进，VLSI和ULSI技术的持续缩小的尺寸已对处理能力提出了更多的要求。
随着下一代装置的电路密度增加，互连(诸如过孔、沟槽、接点、栅极结构和其它特征)的宽度以及在它们之间的介电材料的宽度减小到45nm和32nm的尺寸及更小。为了能够制造下一代装置和结构，经常利用半导体晶片中的特征的三维(3D)堆叠。特别地，鳍状场效应晶体管(FinFET)通常用于在半导体晶片中形成三维(3D)结构。通过以三维布置电晶体来代替传统的二维，可将多个晶体管放置在非常接近彼此的集成电路(IC)中。随着电路密度和堆叠增加，在先前沉积的材料上选择性地沉积后续材料的能力变得重要。
自组装单层(self-assembled monolayer,SAM)可用作掩模材料，以改善随后的材料的沉积选择性。SAM通常是表面化学依赖性的，且可优先地形成在各种材料上。然而，用于沉积SAM的现有设备通常受到缓慢的沉积速率和将在蒸汽状态中的SAM可靠地输送到用于沉积在基板上的处理容积的能力的影响。例如，现有的蒸汽沉积系统使用加热的SAM分子溶液的蒸汽压力以非常低的压力(如，2mTorr)输送SAM分子，以将化学物质曝露于基板。这种低蒸汽压力导致气相中的低浓度且是时间密集的，在某些例子中需花费几天。因此，需花费大量时间以形成不具有针孔的密集的高品质的SAM膜。
因此，本领域需要的是用于基板处理的改进的设备。
发明内容
在一个实施方案中，提供了一种基板处理设备。设备包括界定处理容积的腔室本体，设置在处理容积内的基板支撑件及与基板支撑件相对设置的喷头。盖板可耦接到腔室本体，背板可设置在盖板和喷头之间，且注射组件可耦接到盖板并与背板相对。注射组件可经由背板和喷头与处理容积流体连通。第一蒸汽产生组件可与注射组件流体连通，且第一蒸汽产生组件可经构造以在蒸汽状态中将自组装单层(SAM)前驱物输送到处理容积。第一加热输送导管可设置在第一蒸汽产生组件和注射组件之间。第二蒸汽产生组件可与注射组件流体连通，且第二蒸汽产生组件可经构造以在蒸汽状态中将共反应物输送到处理容积。第二加热输送导管可设置在第二蒸汽产生组件和注射组件之间。
在另一个实施方案中，提供了一种基板处理设备。设备包括界定处理容积的腔室本体，设置在处理容积中的基板支撑件和设置在处理容积中并与基板支撑件相对的加热器。歧管可耦接到腔室本体，且歧管可延伸到处理容积中并延伸到基板支撑件和加热器之间。盖板可耦接到腔室本体，且加热器可设置在基板支撑件和盖板之间。流体导管可在加热器的径向外侧延伸通过盖板和歧管，且蒸汽产生组件也可耦接到腔室本体。蒸汽产生组件包括经由流体导管与处理容积流体连通的注射器。排气口可设置在歧管中并与注射器相对，且注入到处理容积中的蒸汽可从注射器流到排气口。
在又一个实施方案中，提供了一种基板处理设备。设备包括界定处理容积的腔室本体，设置在处理容积中的基板支撑件和设置在处理容积中并与基板支撑件相对的加热器。盖板可耦接到腔室本体，且加热器可设置在基板支撑件和盖板之间。蒸汽产生组件可耦接到盖板的中心区域，且蒸汽产生组件可包括与处理容积流体连通的注射器。SAM前驱物源可经由蒸汽产生组件与处理容积流体连通，且共反应物前驱物源也可经由蒸汽产生组件与处理容积流体连通。
附图说明
使得可详细地理解本公开内容的以上所述的特征的方式，可通过参考实施方案而获得对简要概述于上的本公开内容的更具体的描述，其中一些实施例显示在附随的附图中。然而，应当注意附随的附图显示了示例性实施方案，且因此不被认为是限制其范围，可承认其它等效的实施方案。
图1显示了根据本文所述的一个实施方案的处理腔室的剖视图。
图2A显示了根据本文所述的一个实施方案的图1的处理腔室的喷头的透视图。
图2B显示了根据本文所述的一个实施方案的沿着线2B-2B所截取的图2A的喷头的剖视图。
图3A显示了根据本文所述的一个实施方案的图1的处理腔室的喷头衬垫的透视图。
图3B显示了根据本文所述的一个实施方案的沿着线3B-3B所截取的图3A的喷头衬垫的剖视图。
图4显示了根据本文所述的一个实施方案的图1的处理腔室的泵送衬垫的透视图。
图5A显示了根据本文所述的一个实施方案的处理腔室的剖视图。
图5B显示了根据本文所述的一个实施方案的图5A的处理腔室的放大部分。
图5C显示了根据本文所述的一个实施方案的图5A的处理腔室的基板支撑件和歧管的平面图。
图6显示了根据本文所述的一个实施方案的处理腔室的剖视图。
为促进理解，在可能的情况下，使用相同的元件符号来表示附图中共通的相同元件。可设想一个实施方案的元件和特征可有益地并入到其它实施方案中，而无需进一步的叙述。
具体实施方式
本文所述的实施方案涉及用于自组装单层(self-assembled monolayer,SAM)沉积的设备和方法。本文所述的设备包括具有流体耦合到其上的各种气相输送设备的处理腔室。SAM前驱物可经由加热以将前驱物维持在气相中的各种设备而输送到腔室的处理容积。在一个实施方案中，经构造以用于输送SAM前驱物的第一安瓿或蒸发器可流体耦接到处理腔室的处理容积。经构造以输送与SAM前驱物不同的材料的第二安瓿或蒸发器也可流体耦接到处理腔室的处理容积。
显示在附图中的许多细节、尺寸、角度和其它特征仅仅是特定实施方案的说明。因此，其它实施方案可具有其它细节、部件、尺寸、角度和特征，而不背离本公开内容的精神或范围。此外，可实施方案本公开内容的进一步实施方案，而不需要以下所述的几个细节。
如本文所使用的，“自组装单层”(SAM)通常是指附接(如，通过化学键)到表面且相对于表面且甚至相对于彼此而采用优选取向的分子层。SAM通常包括双亲分子的有机层，其中分子的一端，“头部基”对于基板显示特定、可逆的亲合力。头部基的选择将取决于SAM的应用，其中SAM化合物的类型基于所使用的基板。通常，头部基连接到烷基链，其中尾部或“末端”可被官能化，(例如)以改变润湿性和界面性质。形成SAM的分子将选择性地附接在另一种材料(如，金属与介电材料)上的一种材料上，且若具有足够的密度，则可成功地操作随后的沉积，从而允许选择性地沉积在未涂覆有SAM的材料上。
图1显示了根据本文所述的一个实施方案的处理腔室100的剖视图。腔室100包括界定处理容积110的腔室本体102。基板支撑件104可设置在处理容积110中，且喷头112可设置成与基板支撑件104相对。泵送衬垫150可耦接到腔室本体102且可设置在基板支撑件104的径向外侧。盖板124可耦接到喷头112并由腔室本体102支撑。背板114可设置在喷头112和盖板124之间。注射组件126可耦接到盖板124，且注射组件可与处理容积110流体连通。
腔室本体102可由适合于承受高达约300℃的温度的材料所制成。例如，腔室本体102可由铝、其合金、不锈钢及其它合适的金属材料所形成。狭缝阀开口160可形成在腔室本体102中，以允许基板进入和离开处理容积110。狭缝阀门158可耦接到腔室本体102，且可为可移动的，以对狭缝阀开口160进行密封和解密封。在一个实施方案中，狭缝阀门158可由与腔室本体102相同的材料形成。替代地，狭缝阀门158可由与腔室本体102不同的材料形成。
基板支撑件104可以可移动地设置在处理容积110内。如图所示，基板支撑件104设置在升高的处理位置。可降低基板支撑件104，使得基板支撑件104的基板支撑表面与狭缝阀开口160共面或在狭缝阀开口160的下方，以允许将基板定位在基板支撑件104上。基板支撑件可由适于在升高的处理温度下操作的材料所形成，且可为金属材料、陶瓷材料或其组合。例如，基座可由铝、铝合金、不锈钢或陶瓷材料(诸如氧化铝或氮化铝)形成。
基板支撑件104可具有设置在其中的加热构件106，且加热构件106可耦接到功率源154。功率源154还可提供用于在处理容积110内升高和降低基板支撑件104的功率。加热构件106可为电阻加热器或类似加热器，且可以任何期望的取向而设置在基板支撑件104内。例如，加热构件106可以螺旋取向或经构造以均匀地加热基板支撑件的其它合适的取向(诸如，歪曲路径取向)而形成在基板支撑件104中。在一个实施方案中，加热构件106可经构造以将基板支撑件104加热至约100℃至约300℃之间的温度。
泵送衬垫150经调整尺寸以围绕基板支撑件104和处理容积110。类似于基板支撑件104，泵送衬垫150可由金属材料、陶瓷材料或其组合形成。例如，基座可由铝、铝合金、不锈钢或陶瓷材料(诸如氧化铝或氮化铝)形成。泵送衬垫150可具有形成在其中的开口162，以允许基板进入和离开处理容积110。开口162可定位成与狭缝阀开口160基本上共面。多个孔152可沿着泵送衬垫150的内径而形成。提供多个孔152用于将气体和其它材料从处理容积110排出到排气件。因此，处理容积110经由泵送衬垫150的孔152与排气件156流体连通。
与基板支撑件104相对设置的喷头112可直接或间接地耦接到腔室本体102并由腔室本体102支撑。喷头112可由与用于基板支撑件104和泵送衬垫150的材料类似的材料形成。喷头112可具有形成在其中的多个第一通道121，多个第一通道121从处理容积110延伸到第一集气室120，第一集气室120形成在喷头112和背板114之间。第一通道121使得能够流体连通并将蒸汽从第一集气室120传送到处理容积110。
喷头衬垫108也可设置在处理容积110中。喷头衬垫108可由与喷头112相同或相似的材料所形成，且喷头衬垫可耦接到喷头112。在一个实施方案中，喷头衬垫108是环状体。喷头衬垫108可具有基本上类似于基板支撑件104的外径的内径。喷头衬垫108的内径也可经调整尺寸以使得喷头衬垫108的最内侧表面在第一通道121的径向外侧，以便不干扰将蒸汽输送到处理容积110。喷头衬垫108在处理容积110内占据物理空间，并减少处理容积110的容积，从而减少在基板上形成SAM分子所需的SAM前驱物的量。因此，可提高SAM形成工艺的效率。
喷头112还可具有设置在其中的加热器116。加热器116可为电阻加热器或类似加热器，且可设置在喷头112内并位于第一通道121的径向外侧。在一个实施方案中，加热器116可以基本上围绕第一通道121的圆周取向而设置在喷头112内。加热器116可耦接到功率源118，以能够实现喷头112的电阻加热。在一个实施方案中，喷头112可经构造以加热到约150℃和约250℃之间的温度。
设置在喷头和盖板124之间且部分地界定第一集气室120的背板114可具有设置在其中的多个第二通道123。第二集气室122可形成在背板114和盖板124之间。通道123使得第二集气室122能够与第一集气室120流体连通。多个第三通道125可形成在盖板124中并位于第二集气室122和注射组件126之间。
注射组件126经构造以将蒸发的材料输送到处理容积110。在操作中，蒸发的材料(诸如SAM前驱物及/或共反应物前驱物)通过多个第三通道125从注射组件126输送到第二集气室122。蒸发的材料通过背板114的多个第二通道123行进到第一集气室120并通过喷头112的多个第一通道121行进到处理容积110。在处理基板之后，蒸发的材料和其它流出物可经由排气件156通过泵送衬垫150的孔152从处理容积110移除。
注射组件126包括耦接到盖板124的外壳127和耦接到外壳127的注射器128。注射器128可设置在外壳127内，且注射器128可包括第三集气室148。在一个实施方案中，第三集气室148可以是漏斗状。第三集气室148的形状可经构造以在蒸发的材料被输送到处理容积110之前促进和激励蒸发的材料的混合。虽然第三集气室148被显示为漏斗形，但也可考虑促进蒸汽化材料的混合的其它形状。
第一安瓿130可经由第一导管132而耦接到注射组件126。更具体地，第一安瓿130可经由第一导管132与注射器128的第三集气室148流体连通。第一导管132可从第一安瓿130延伸到第三集气室148。第一加热器护套134可在注射器128之外的第一导管132的部分上围绕第一导管132。在一个实施方案中，第一加热器护套134可被电阻加热以将第一导管132的温度保持在约50℃至约250℃之间。
第一安瓿130经构造以将SAM前驱物蒸发并将SAM前驱物输送到处理容积110。根据本文所述的实施方案所使用的合适的SAM前驱物的例子，除了具有适合于在半导体制造工艺中阻挡后续沉积材料的沉积的特性的其它SAM前驱物材料之外，包括下文所描述的材料(包括其组合物，混合物和移植物)。在一个实施方案中，SAM前驱物可为羧酸材料，诸如甲基羧酸、乙基羧酸、丙基羧酸、丁基羧酸、戊基羧酸、己基羧酸、庚基羧酸、辛基羧酸、壬基羧酸、癸基羧酸、十一烷基羧酸、十二烷基羧酸、十三烷基羧酸、十四烷基羧酸、十五烷基羧酸、十六烷基羧酸、十七烷基羧酸、十八烷基羧酸和十九烷基羧酸。
在一个实施方案中，SAM前驱物可为膦酸材料，诸如甲基膦酸、乙基膦酸、丙基膦酸、丁基膦酸、戊基膦酸、己基膦酸、庚基膦酸、辛基膦酸、壬基膦酸、癸基膦酸、十一烷基膦酸、十二烷基膦酸、十三烷基膦酸、十四烷基膦酸、十五烷基膦酸、十六烷基膦酸、十七烷基膦酸、十八烷基膦酸和十九烷基膦酸。
在另一个实施方案中，SAM前驱物可为硫醇材料，诸如甲硫醇、乙硫醇、丙硫醇、丁硫醇、戊硫醇、己硫醇、庚硫醇、辛硫醇、壬硫醇、癸硫醇、十一烷硫醇、十二烷硫醇、十三烷硫醇、十四烷硫醇、十五烷硫醇、十六烷硫醇、十七烷硫醇、十八烷硫醇和十九烷硫醇。
在另一个实施方案中，SAM前驱物可为甲硅烷基胺材料，诸如三(二甲基胺基)甲基硅烷、三(二甲基胺基)乙基硅烷、三(二甲基胺基)丙基硅烷、三(二甲基胺基)丁基硅烷、三(二甲基胺基)戊基硅烷、三(二甲基胺基)己基硅烷、三(二甲基胺基)庚基硅烷、三(二甲基胺基)辛基硅烷、三(二甲基胺基)壬基硅烷、三(二甲基胺基)癸基硅烷、三(二甲基胺基)十一烷基硅烷、三(二甲基胺基)十二烷基硅烷、三(二甲基胺基)十三烷基硅烷、三(二甲基胺基)十四烷基硅烷、三(二甲基胺基)十五烷基硅烷、三(二甲基胺基)十六烷基硅烷、三(二甲基胺基)十七烷基硅烷、三(二甲基胺基)十八烷基硅烷和三(二甲基胺基)十九烷基硅烷。
在另一个实施方案中，SAM前驱物可为氯硅烷材料，诸如甲基三氯硅烷、乙基三氯硅烷、丙基三氯硅烷、丁基三氯硅烷、戊基三氯硅烷、己基三氯硅烷、庚基三氯硅烷、辛基三氯硅烷、壬基三氯硅烷、癸基三氯硅烷、十一烷基三氯硅烷、十二烷基三氯硅烷、十三烷基三氯硅烷、十四烷基三氯硅烷、十五烷基三氯硅烷、十六烷基三氯硅烷、十七烷基三氯硅烷、十八烷基三氯硅烷和十九烷基三氯硅烷。
在另一个实施方案中，SAM前驱物可为氧基硅烷材料，诸如甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷、丙基三甲氧基硅烷、丙基三乙氧基硅烷、丁基三甲氧基硅烷、丁基三乙氧基硅烷、戊基三甲氧基硅烷、戊基三乙氧基硅烷、己基三甲氧基硅烷、己基三乙氧基硅烷、庚基三甲氧基硅烷、庚基三乙氧基硅烷、辛基三甲氧基硅烷、辛基三乙氧基硅烷、壬基三甲氧基硅烷、壬基三乙氧基硅烷、癸基三甲氧基硅烷、癸基三乙氧基硅烷、十一烷基三甲氧基硅烷、十一烷基三乙氧基硅烷、十二烷基三甲氧基硅烷、十二烷基三乙氧基硅烷、十三烷基三甲氧基硅烷、十三烷基三乙氧基硅烷、十四烷基三甲氧基硅烷、十四烷基三乙氧基硅烷、十五烷基三甲氧基硅烷、十五烷基三乙氧基硅烷、十六烷基三甲氧基硅烷、十六烷基三乙氧基硅烷、十七烷基三甲氧基硅烷、十七烷基三乙氧基硅烷、十八烷基三甲氧基硅烷、十八烷基三甲氧基硅烷、十九烷基三甲氧基硅烷和十九烷基三乙氧基硅烷。
在另一个实施方案中，SAM前驱物可具有氟化R基团，诸如(1,1,2,2-全氟癸基)三氯硅烷、三氯(1,1,2,2-全氟辛基)硅烷、(十三氟-1,1,2,2-四氢辛基)三氯硅烷、(十三氟-1,1,2,2-四氢辛基)三乙氧基硅烷、(十三氟-1,1,2,2-四氢辛基)甲基二氯硅烷、(十三氟-1,1,2,2-四氢辛基)二甲基氯硅烷和(十七氟-1,1,2,2-四氢癸基)三氯硅烷等。
第二安瓿136可经由第二导管138而耦接到注射组件126。更具体地，第二安瓿136可经由第二导管138与注射器128的第三集气室148流体连通。第二导管138可从第二安瓿136延伸到第三集气室148。第二加热器护套140可在注射器128之外设置的第二导管138的部分上围绕第二导管138。在一个实施方案中，第二加热器护套140可被电阻加热，以将第二导管138的温度保持在约50℃和约250℃之间。
第二安瓿136经构造以蒸发并将共反应物前驱物输送到处理容积110。共反应物前驱物的合适例子包括羟基部分材料(诸如环境空气，水溶液或蒸汽)、过氧化氢溶液或蒸汽、有机醇溶液或蒸汽(诸如甲醇、异丙醇、乙醇和二醇)等。氢气和氧气也可组合使用于形成羟基部分。预期可根据本文所述的实施方案利用其它非羟基部分前驱物。非羟基部分前驱物可包括氮气、(二)异氰酸酯、硫化氢和氨等。
在一个实施方案中，清洁气体源142可经由第三导管144耦接到注射组件126。更具体地，清洁气体源142可经由第三导管144而与注射器128的第三集气室148流体连通。第三导管144可从清洁气体源142延伸到第三集气室148。第三加热器护套146可任选地在注射器128之外设置的第三导管144的部分上围绕第三导管144。在一个实施方案中，第三加热器护套146可被电阻加热，以将第三导管144的温度保持在约50℃和约250℃之间。由清洁气体源142所提供的气体可包括含氯材料、含氟材料和适于清洁处理腔室100的部件的其它材料。
在另一个实施方案中，清洁气体源142可为远程等离子体源。在所述实施方案中，远程等离子体源可激发清洁气体以产生自由基和/或离子，并将等离子体产物输送到处理容积110。在一个实施方案中，远程等离子体源可为可选的。
在另一个实施方案中，清洁气体源142可为载气源。可使用载气来促进气相SAM前驱物的输送，且取决于处理容积110，载气可以特定流率输送，所述特定流率适于促进将SAM前驱物从第三集气室148通过第三通道125，通过第二集气室122和第二通道123，及通过第一集气室120和第一通道121而输送到处理容积110。合适的载气包括通常在促进SAM分子输送到基板表面的SAM吸附条件下为惰性的气体(诸如惰性气体或类似气体)。
加热的喷头112和加热的基板支撑件104可将处理容积110加热至在约50℃至约250℃之间的温度。安瓿130、136和导管132、138可被加热到类似的温度。喷头衬垫108、背板114、盖板124及注射组件126也可通过喷头112而传导加热。SAM前驱物沿着其行进的流动路径的温度被保持在升高的温度，以防止在各种设备上的蒸发的SAM前驱物的冷凝。处理容积110还可保持在低于约600托的压力，这也促进保持SAM前驱物和共反应物前驱物的蒸汽状态。
在操作的实施方案中，SAM前驱物可连续地通过处理容积110而从第一安瓿130流到排气件156。在这个实施方案中，处理容积110的压力可保持在等压状态。在另一个实施方案中，SAM前驱物可填充处理容积110并可在SAM前驱物从处理容积110排出之前保持在处理容积110中一段时间。在另一个实施方案中，共反应物前驱物可连续地流到处理容积110，或以不连续的方式(诸如脉冲的方式)而提供。在另一个实施方案中，SAM前驱物和共反应物前驱物可以交替的方式连续地或静态地提供到处理容积110。
图2A显示了根据本文所述的一个实施方案的图1的喷头112的透视图。在所示的取向上，具有第一通道121形成在其中的喷头的表面206是邻近且至少部分地界定处理容积110的表面。还显示了从喷头112延伸的加热器116。连接构件202(诸如导热线或导电线，或类似者)可从加热器116延伸到功率源118(未显示)。
图2B显示了根据本文所述的一个实施方案沿着线2B-2B所截取的图2A的喷头112的剖视图。在所示的实施方案中，加热器116设置在喷头112内。可在喷头112的主体中加工有孔隙，且加热器116可插入喷头112中。在插入或放置加热器116之后，盖204可在与表面206相对的位置耦接到喷头112。盖204可将加热器116包装在喷头112内，且防止加热器116曝露于各种处理环境。
图3A显示了根据本文所述的一个实施方案的喷头衬垫108的透视图。如图所示，喷头衬垫108主要是环形的。可设想可利用各种几何形状的其它实施方案，诸如环形、矩形和多边形。
图3B显示了根据本文所述的一个实施方案沿着线3B-3B所截取的图3A的喷头衬垫108的剖视图。喷头衬垫108包括第一表面310和第二表面308，第二表面308与第一表面310垂直设置并从第一表面310延伸。第三表面306与第二表面308垂直设置，并从第二表面308径向向内延伸。在一个实施方案中，第一表面310和第三表面基本上平行。第四表面314与第三表面306垂直设置并从第三表面306延伸，第四表面314平行于第二表面308。第五表面304与第四表面314垂直设置并从第四表面314延伸。第六表面302与第五表面304垂直设置并从第五表面304延伸到第一表面310。
第一表面310可设置成邻近在腔室100内接触喷头112。第二表面308可设置成邻近并接触泵送衬垫150。第二表面308界定喷头衬垫108的外径，且第二表面308可具有小于泵送衬垫150的内径的直径。第六表面302界定喷头衬垫108的内径，且第六表面302可设置在第一通道121的径向外侧。一个或多个孔312可形成在喷头衬垫108中且在第一表面310和第五表面304之间延伸。孔312可提供用于耦接设备(诸如螺钉或类似者)，以将喷头衬垫108固定到喷头112。
图4显示了根据本文所述的一个实施方案的泵送衬垫150的透视图。如图所示，泵送衬垫150主要是环形的。形成在泵送衬垫150中的开口162可沿圆周在圆周的约25％至约50％之间延伸。可设想开口162可具有足够的尺寸以允许基板和机器人传送叶片通过其中。孔152可沿着界定泵送衬垫150的内径的内表面402而设置，且孔152可通过泵送衬垫150延伸到泵送衬垫150的一部分的外径。尽管未显示，孔152完全地延伸通过泵送衬垫150，这在图1中更清楚地显示。
图5A显示了根据本文所述的一个实施方案的处理腔室500的剖视图。腔室500包括界定处理容积506的腔室本体502。基板支撑件504可设置在处理容积506内，且加热器514可设置在处理容积506中并与基板支撑件504相对。盖板516可耦接到腔室本体502，且蒸汽产生组件518可耦接到盖板516。
腔室本体502可由与腔室本体102相同或相似的材料形成。类似地，基板支撑件504可由与基板支撑件104相同或相似的材料形成。基板支撑件504包括设置在其中的加热构件508。加热构件508可耦接到功率源510且经构造以将基板支撑件504加热到在约100℃和约500℃之间的温度。
与基板支撑件504相对设置的加热器514可进一步界定在加热器514和基板支撑件504之间的处理容积506。加热器514可耦接到功率源528，且经构造以将加热器514加热至在约100℃至约500℃之间的温度。处理容积506的温度可在处理期间被保持在约50℃至约500℃之间的温度，诸如在约100℃至约250℃之间。气体源526还可耦接到加热器514，且气体源526可与处理容积506流体连通。在一个实施方案中，气体源526可经构造以将共反应物前驱物输送到处理容积506。替代地，气体源526可经构造以根据所需的实施方案而将净化气体、载气或清洁气体输送到处理容积506。
蒸汽产生组件518(诸如蒸发器，直接液体注射蒸发器，或类似者)可耦接到盖板516。蒸汽产生组件518耦接到盖板516并位于处理容积的径向外侧。蒸汽产生组件518的位置及蒸汽注入到处理容积506的位置提供基板对SAM前驱物的交叉流类型的曝露。蒸汽产生组件518包括蒸发器522和从蒸发器522延伸的注射器520。蒸发器522可耦接到SAM前驱物源524且接收液体形式的SAM前驱物以进行蒸发。蒸发器522可保持在约100℃和约500℃之间的温度以蒸发SAM前驱物，且蒸发器522的温度可至少部分地通过SAM前驱物的蒸汽压力而确定。
蒸发的SAM前驱物可离开蒸发器522且行进通过注射器520。注射器520从蒸发器522延伸通过蒸汽产生组件518且延伸到盖板516，蒸汽产生组件518可通过加热器护套512而保持在升高的温度，以维持SAM前驱物处于蒸汽状态。虽然显示了单一注射器，但是可想到附加的注射器，诸如图6中所示。SAM前驱物的行进路径将关于图5B而更详细地讨论。
歧管536可耦接至腔室本体502并位于基板支撑件504和加热器514的径向外侧。歧管536可由与基板支撑件504和加热器514相同或类似材料而形成。歧管536经调整尺寸以围绕处理容积506，使得歧管536的内径大于基板支撑件504的外径和加热器514的外径。蒸汽可通过歧管536从注射器520流到与注射器520相对设置的出口530。排气件532还可耦接到处理容积506并与处理容积506流体连通。更具体地，排气件532可经由出口530而与处理容积506流体连通。因此，处理容积的流出物可通过出口530从处理容积506排出到排气件532。
热绝缘件534可耦接到盖板516，位于加热器514的径向外侧。热绝缘件534可经调整尺寸以类似于歧管536，且可设置在歧管536和盖板516之间。热绝缘件534还可耦接到腔室本体502或与腔室本体502接触。热绝缘件534可由热绝缘材料(诸如陶瓷材料或类似材料)形成，其经构造以减小或防止来自基板支撑件504、加热器514和歧管536的热传导到盖板516。在一个实施方案中，热绝缘件534可为任选的。在这种实施方案中，气隙可用作为盖板516和基板支撑件504、加热器514和歧管536之间的热阻断。
图5B显示了根据本文所述的一个实施方案的图5A的处理腔室500的放大部分。注射器520延伸到盖板516并与形成在盖板516中的第一管道548相邻。第二管道546可形成在热绝缘件534中并与第一管道548相邻并对准。第三管道544可形成在歧管536中并与第二管道546相邻并对准。第三管道544可从热绝缘件534的第二管道546延伸到邻近处理容积506设置的出口542。出口542可经定位，使得当基板支撑件504处于升高的处理位置时，从蒸汽产生组件518所提供的蒸汽进入基板支撑件504和加热器514之间的处理容积506。因此，来自蒸汽产生组件518的蒸汽通过注射器520、第一管道548、第二管道546和第三管道544，并通过出口542行进到处理容积506。
图5C显示了根据本文所述的一个实施方案的图5A的处理腔室500的基板支撑件504和歧管536的平面图。如图所示，第三管道544和出口542与出口530相对设置。因此，离开出口542的蒸汽跨越设置在基板支撑件504上的基板行进到出口530。出口530可形成在歧管536中，且曲线地延伸小于歧管536的圆周的一半的距离。还可在基板支撑件504中形成多个孔540，以允许举升销延伸通过其中。
图6显示了根据本文所述的一个实施方案的处理腔室600的剖视图。腔室600包括界定处理容积606的腔室本体602。基板支撑件604可设置在处理容积606内，且盖板616可耦接到腔室本体602并与基板支撑件604相对。蒸汽产生组件618可耦接到盖板616。
腔室本体602可由与腔室本体502相同或相似的材料形成。类似地，基板支撑件604可由与基板支撑件504相同或相似的材料形成。基板支撑件604包括设置在其中的加热构件608。加热构件608可耦接到功率源610且经构造以将基板支撑件604加热到在约100℃和约500℃之间的温度。
蒸汽产生组件618(诸如蒸发器，直接液体注射蒸发器或类似者)可与盖板616耦接并邻近处理容积606的中心。蒸汽产生组件618的位置和将蒸汽注入到处理容积606的位置提供基板对SAM前驱物的从上到下类型的曝露。蒸汽产生组件618包括蒸发器622和从蒸发器622延伸的一个或多个注射器612、614。蒸发器622可耦接到SAM前驱物源624并接收液体形式的SAM前驱物以进行蒸发。蒸发器622可保持在约100℃和约500℃之间的温度，以蒸发SAM前驱物，且蒸发器622的温度可至少部分地通过SAM前驱物的蒸汽压力而确定。
蒸发的SAM前驱物可离开蒸发器622且通过注射器612、614的一个或两个而行进。注射器612、614从蒸发器622延伸通过蒸汽产生组件618，并延伸到盖板616，蒸汽产生组件618可通过加热器护套628而保持在升高的温度，以将SAM前驱物保持在蒸汽状态。在一个实施方案中，来自源624的SAM前驱物可经由注射器612通过出口630而引入到处理容积。气体源626还可与处理容积606流体连通。气体源626可将液体或气体引入到蒸汽产生组件618，且所产生的蒸汽可经由注射器614和出口630而被引入处理容积606。在一个实施方案中，气体源626可提供共反应物前驱物。在另一个实施方案中，气体源626可根据所需的实施方案而提供净化气体、载气或清洁气体。
处理容积606还可与排气件632流体连通。因此，处理容积流出物可经由排气件632从处理容积606排出。腔室500和600两者可保持在小于约600托的压力。在腔室500、600中执行的工艺可为等压的或非等压的。类似地，在腔室500、600中执行的工艺可为等温的或非等温的。
虽然前述内容涉及本公开内容的实施方案，但是可在不背离本公开内容的基本范围的情况下，设计本公开内容的其它和进一步的实施方案，且本公开内容的保护范围由随附的权利要求书所确定。

Claims (17)

1.一种基板处理设备，包含：
腔室本体，界定处理容积；
基板支撑件，设置在所述处理容积内；
喷头，与所述基板支撑件相对设置；
盖板，耦接到所述腔室本体；
背板，设置在所述盖板和所述喷头之间；
注射组件，耦接到所述盖板并与所述背板相对，其中所述注射组件经由所述背板和所述喷头而与所述处理容积流体连通；
第一蒸汽产生组件，与所述注射组件流体连通，其中所述第一蒸汽产生组件经构造以在蒸汽状态中将自组装单层前驱物输送到所述处理容积；
第一加热输送导管，设置在所述第一蒸汽产生组件和所述注射组件之间；
第二蒸汽产生组件，与所述注射组件流体连通，其中所述第二蒸汽产生组件经构造以在蒸汽状态中将共反应物输送到所述处理容积；及
第二加热输送导管，设置在所述第二蒸汽产生组件和所述注射组件之间；
泵送衬垫，围绕所述基板支撑件径向设置；
喷头衬垫，耦接到所述喷头并与所述基板支撑件相对，其中所述喷头衬垫经构造以减小所述处理容积的容积，所述喷头衬垫包括第一表面、第二表面、第三表面、第四表面、第五表面和第六表面，所述第一表面被设置成邻近并接触所述喷头，所述第二表面被设置成从所述第一表面延伸，所述第三表面从所述第二表面径向向内延伸，所述第四表面被设置成位于所述第二表面的径向内侧并且被设置成与所述第三表面垂直并从所述第三表面延伸，所述第五表面从所述第四表面径向向内延伸，并且所述第六表面从所述第五表面延伸至所述第一表面，其中所述第二表面被设置成邻近并接触所述泵送衬垫，所述第二表面界定所述喷头衬垫的外径并且所述第二表面具有小于所述泵送衬垫的内径的直径。
2.根据权利要求1所述的设备，其中所述泵送衬垫与所述处理容积和排气件流体连通。
3.根据权利要求1所述的设备，其中所述注射组件和所述喷头由从由以下材料所组成的群组中选择的材料形成：铝、铝合金、不锈钢、氧化铝和氮化铝。
4.根据权利要求1所述的设备，其中所述第一加热输送导管和所述第二加热输送导管被多个加热器护套围绕。
5.根据权利要求1所述的设备，其中所述第一蒸汽产生组件和所述第二蒸汽产生组件是安瓿或直接液体注射蒸发器。
6.根据权利要求1所述的设备，其中所述第一蒸汽产生组件和所述第二蒸汽产生组件经构造以在50℃和200℃之间的温度下蒸发液体。
7.根据权利要求1所述的设备，其中所述自组装单层前驱物是从由以下所组成的群组中选择的：膦酸材料、硫醇材料、甲硅烷基胺材料、氯硅烷材料、氧基硅烷材料及上述材料的组合。
8.根据权利要求1所述的设备，其中所述共反应物是从由以下所组成的群组中选择的：环境空气、水蒸汽、过氧化氢蒸汽、有机醇蒸汽、氧气和氢气。
9.根据权利要求1所述的设备，进一步包括：
清洁气体源，与所述注射组件流体连通。
10.根据权利要求9所述设备，其中所述清洁气体源是远程等离子体源。
11.根据权利要求1所述的设备，其中所述第二表面设置为垂直于所述第一表面，所述第三表面平行于所述第一表面并设置为垂直于所述第二表面，所述第四表面设置为平行于所述第二表面，并且所述第五表面设置为垂直于所述第四表面，并且所述第六表面设置为垂直于所述第五表面。
12.根据权利要求1所述的设备，其中所述泵送衬垫包括具有所述泵送衬垫的内径的内表面和多个孔，所述多个孔沿着所述内表面设置并延伸穿过所述泵送衬垫至所述泵送衬垫的外表面，所述多个孔用于将气体和其它材料从所述处理容积排出到排气件。
13.一种基板处理设备，包含：
腔室本体，界定处理容积；
基板支撑件，设置在所述处理容积中；
加热器，设置在所述处理容积中并与所述基板支撑件相对；
歧管，耦接到所述腔室本体并位于所述基板支撑件和所述加热器的径向外侧，所述歧管延伸到所述处理容积中并延伸到所述基板支撑件和所述加热器之间；
盖板，耦接到所述腔室本体，其中所述加热器设置在所述基板支撑件和所述盖板之间；
流体导管，在所述加热器的径向外侧延伸通过所述盖板和所述歧管；和
蒸汽产生组件，在所述处理容积的径向外侧耦接到所述盖板，所述蒸汽产生组件被加热器护套加热至一定温度，以将在所述蒸汽产生组件中流动的自组装单层前驱物维持在蒸汽状态，所述蒸汽产生组件包含：
注射器，经由所述流体导管与所述处理容积流体连通；其中
所述歧管形成有通道、邻近所述处理容积的出口和与所述出口相对设置的排气口，其中所述通道和所述出口是所述流体导管的一部分，并且注入到所述处理容积中的蒸汽从所述出口行进跨越设置在所述基板支撑件上的基板流到所述排气口。
14.根据权利要求13所述的设备，进一步包含：
自组装单层前驱物源，与所述蒸汽产生组件流体连通，其中所述自组装单层前驱物源经构造以经由所述注射器而将从由以下所组成的群组选择的所述自组装单层前驱物输送到所述处理容积：膦酸材料、硫醇材料、甲硅烷基胺材料、氯硅烷材料、氧基硅烷材料及上述材料的组合。
15.根据权利要求13所述的设备，进一步包含：
热绝缘件，设置在所述加热器的径向外侧并设置在所述歧管和所述盖板之间。
16.根据权利要求15所述的设备，其中所述流体导管延伸通过所述盖板、所述热绝缘件和所述歧管。
17.根据权利要求13所述的设备，其中集气室界定在所述加热器和所述盖板之间，且所述流体导管延伸通过所述盖板、所述集气室和所述歧管。
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