JP7198246B2 - 自己組織化単分子層処理のための化学物質供給チャンバ - Google Patents
自己組織化単分子層処理のための化学物質供給チャンバ Download PDFInfo
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- JP7198246B2 JP7198246B2 JP2020153837A JP2020153837A JP7198246B2 JP 7198246 B2 JP7198246 B2 JP 7198246B2 JP 2020153837 A JP2020153837 A JP 2020153837A JP 2020153837 A JP2020153837 A JP 2020153837A JP 7198246 B2 JP7198246 B2 JP 7198246B2
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Description
また、本願は以下に記載する態様を含む。
(態様1)
基板処理装置であって、
処理空間を画定するチャンバ本体、
前記処理空間内に配置された基板支持体、
前記基板支持体の反対側に配置されたシャワーヘッド、
前記チャンバ本体に連結されたリッドプレート、
前記リッドプレートと前記シャワーヘッドとの間に配置されたバッキング板、
前記バッキング板の反対側で前記リッドプレートに連結された射出アセンブリであって、前記バッキング板及び前記シャワーヘッドを介して、前記処理空間と流体連通している、射出アセンブリ、
前記射出アセンブリと流体連通している第1の蒸気生成アセンブリであって、自己組織化単分子(SAM)前駆体を蒸気状態で前記処理空間に供給するように構成された第1の蒸気生成アセンブリ、
前記第1の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第1の加熱された供給導管、
前記射出アセンブリと流体連通している第2の蒸気生成アセンブリであって、共反応物を蒸気状態で前記処理空間に供給するように構成された第2の蒸気生成アセンブリ、
前記第2の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第2の加熱された供給導管
を備えている装置。
(態様2)
前記基板支持体の周りで径方向に配置されたポンピングライナーであって、前記処理空間及び排出部と流体連通している、ポンピングライナーをさらに備えている、態様1に記載の装置。
(態様3)
前記基板支持体の反対側で前記シャワーヘッドに連結されたシャワーヘッドライナーであって、前記処理空間の体積を減少させるように構成されている、シャワーヘッドライナーをさらに備えている、態様1に記載の装置。
(態様4)
前記射出アセンブリ、前記ブロッカプレート、前記シャワーヘッドが、アルミニウム、アルミニウム合金、ステンレス鋼、酸化アルミニウム、及び窒化アルミニウムからなる群から選択された材料から形成される、態様1に記載の装置。
(態様5)
前記第1の加熱された供給ライン及び前記第2の加熱された供給ラインが、ヒータアセンブリで被覆されている、態様1に記載の装置。
(態様6)
前記第1の蒸気生成アセンブリ及び前記第2の蒸気生成アセンブリが、アンプル又は直接液体射出気化器である、態様1に記載の装置。
(態様7)
前記第1の蒸気生成アセンブリ及び前記第2の蒸気生成アセンブリが、50℃から200℃の間の温度で液体を気化するように構成されている、態様1に記載の装置。
(態様8)
前記SAM前駆体が、ホスホン酸材料、チオール材料、シリルアミン材料、クロロシラン材料、オキシラン材料、及びこれらの組み合わせからなる群から選択される、態様1に記載の装置。
(態様9)
前記共反応物が、周囲空気、水蒸気、過酸化水素蒸気、有機アルコール蒸気、酸素ガス、及び水素ガスからなる群から選択される、態様1に記載の装置。
(態様10)
基板処理装置であって、
処理空間を画定するチャンバ本体、
前記処理空間内に配置された基板支持体、
前記処理空間内で前記基板支持体の反対側に配置されたヒータ、
前記チャンバ本体に連結されたマニホールドであって、前記基板支持体と前記ヒータとの間で前記処理空間内に延在する、マニホールド、
前記チャンバ本体に連結されたリッドプレートであって、前記ヒータが、前記基板支持体と前記リッドプレートとの間に配置されている、リッドプレート、
前記ヒータの径方向外側で、前記リッドプレート及び前記マニホールドを通って延在する流体導管、
前記チャンバ本体に連結された蒸気生成アセンブリであって、
前記流体導管を介して、前記処理空間と流体連通している射出器を備えている蒸気生成アセンブリ、及び
前記射出器の反対側で前記マニホールド内に配置された排気口であって、前記処理空間内に射出される蒸気が、前記射出器から前記排気口へと流れる、排気口
を備えている基板処理装置。
(態様11)
前記蒸気生成アセンブリと流体連通しているSAM前駆体源であって、ホスホン酸材料、チオール材料、シリルアミン材料、クロロシラン材料、オキシラン材料、及びこれらの組み合わせからなる群から選択されたSAM前駆体を、前記射出器を介して、前記処理空間に供給するように構成された、SAM前駆体源をさらに備えている、態様10に記載の装置。
(態様12)
前記ヒータの径方向外側で、前記マニホールドと前記リッドプレートとの間に配置された断熱材をさらに備えている、態様10に記載の装置。
(態様13)
前記流体導管が、前記リッドプレート、前記断熱材、及び前記マニホールドを通って延在している、態様12に記載の装置。
(態様14)
プレナムが、前記ヒータと前記リッドプレートとの間で画定され、前記流体導管が、前記リッドプレート、前記プレナム、及び前記マニホールドを通って延在している、態様10に記載の装置。
(態様15)
基板処理装置であって、
処理空間を画定するチャンバ本体、
前記処理空間内に配置された基板支持体、
前記処理空間内で前記基板支持体の反対側に配置されたヒータ、
前記チャンバ本体に連結されたリッドプレートであって、前記ヒータが、前記基板支持体と前記リッドプレートとの間に配置されている、リッドプレート、
前記リッドプレートの中央領域に連結された蒸気生成アセンブリであって、
前記処理空間と流体連通している射出器を備えている蒸気生成アセンブリ、
前記蒸気生成アセンブリを介して、前記処理空間と流体連通しているSAM前駆体源、及び
前記蒸気生成アセンブリを介して、前記処理空間と流体連通している共反応物前駆体源
を備えている基板処理装置。
Claims (3)
- 基板処理装置であって、
処理空間を画定するチャンバ本体、
前記処理空間内に配置された基板支持体、
前記処理空間内で前記基板支持体の反対側に配置されたヒータ、
前記チャンバ本体に連結されたマニホールドであって、前記基板支持体と前記ヒータとの間で前記処理空間内に延在する、マニホールド、
前記チャンバ本体に連結されたリッドプレートであって、前記ヒータが、前記基板支持体と前記リッドプレートとの間に配置されている、リッドプレート、
前記ヒータの径方向外側で、前記リッドプレート及び前記マニホールドを通って延在する流体導管、
前記チャンバ本体に連結された蒸気生成アセンブリであって、
前記流体導管を介して、前記処理空間と流体連通している射出器を備えている蒸気生成アセンブリ、
前記射出器の反対側で前記マニホールド内に配置された排気口であって、前記処理空間内に射出される蒸気が、前記射出器から前記排気口へと流れる、排気口、及び
前記ヒータの径方向外側で前記リッドプレートに連結され、前記マニホールドと同様に寸法形成され、前記マニホールドと前記リッドプレートとの間に配置され、かつ前記チャンバ本体に連結又は接触した断熱材、
を備えており、
前記射出器は、前記リッドプレート内に形成された第1のチャネルに隣接して、前記リッドプレートに延在し、
第2のチャネルが、前記第1のチャネルに隣接して整列されて、前記断熱材内に形成され、かつ第3のチャネルが、前記第2のチャネルに隣接して整列されて、前記マニホールド内に形成され、
前記第3のチャネルは、前記断熱材の前記第2のチャネルから前記処理空間に隣接して配置された出口まで延在し、
前記基板支持体が上昇した処理位置にあるときに、前記蒸気生成アセンブリから供給される蒸気が前記基板支持体と前記ヒータとの間で前記処理空間に入るように前記出口が位置付けされることによって、前記蒸気生成アセンブリからの蒸気が、前記射出器、前記第1のチャネル、前記第2のチャネル、及び前記第3のチャネルを通って移動し、さらに前記出口を通って前記処理空間に至る、基板処理装置。 - 前記蒸気生成アセンブリと流体連通しているSAM前駆体源であって、ホスホン酸材料、チオール材料、シリルアミン材料、クロロシラン材料、オキシラン材料、及びこれらの組み合わせからなる群から選択されたSAM前駆体を、前記射出器を介して、前記処理空間に供給するように構成された、SAM前駆体源をさらに備えている、請求項1に記載の装置。
- プレナムが、前記ヒータと前記リッドプレートとの間で画定され、前記流体導管が、前記リッドプレート、前記プレナム、及び前記マニホールドを通って延在している、請求項1に記載の装置。
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112513322B (zh) | 2018-08-02 | 2023-09-26 | 东京毅力科创株式会社 | 成膜装置 |
WO2020242648A1 (en) * | 2019-05-31 | 2020-12-03 | Applied Materials, Inc. | Methods and systems for forming films on substrates |
KR102280035B1 (ko) * | 2019-10-10 | 2021-07-21 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US11420217B2 (en) | 2019-12-19 | 2022-08-23 | Applied Materials, Inc. | Showerhead for ALD precursor delivery |
US11242600B2 (en) * | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
WO2022061455A1 (en) * | 2020-09-22 | 2022-03-31 | Mcmaster University | Lubricant-infused surface biosensing interface, methods of making and uses thereof |
US20220108872A1 (en) * | 2020-10-05 | 2022-04-07 | Applied Materials, Inc. | Bevel backside deposition elimination |
US11584993B2 (en) | 2020-10-19 | 2023-02-21 | Applied Materials, Inc. | Thermally uniform deposition station |
CN114261039A (zh) * | 2021-12-30 | 2022-04-01 | 广东粤港澳大湾区国家纳米科技创新研究院 | 一种模板钝化的工艺 |
JP2023100428A (ja) * | 2022-01-06 | 2023-07-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20240053803A (ko) | 2022-10-18 | 2024-04-25 | 에스케이스페셜티 주식회사 | 기판 처리 방법 및 이를 이용한 영역 선택적 박막 증착 방법 |
WO2024137347A1 (en) * | 2022-12-21 | 2024-06-27 | Applied Materials, Inc. | Tunable hardware to control radial flow distribution in a processing chamber |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100116207A1 (en) | 2008-11-07 | 2010-05-13 | Asm America, Inc. | Reaction chamber |
JP2014179466A (ja) | 2013-03-14 | 2014-09-25 | Applied Materials Inc | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
JP2014531508A (ja) | 2011-09-01 | 2014-11-27 | メムススター リミテッドMemsstar Limited | デバイス上にコーティングを堆積させる改善された堆積法 |
WO2015065790A1 (en) | 2013-11-01 | 2015-05-07 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma cvd technology |
US20160056071A1 (en) | 2014-08-20 | 2016-02-25 | Lam Research Corporation | Flowable dielectric for selective ultra low-k pore sealing |
JP2016046524A (ja) | 2014-08-22 | 2016-04-04 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッドの能動加熱および/またはペデスタルの冷却によって低温aldシステム内で安定した蒸着速度制御を行うための方法および装置 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148480A (ja) * | 1994-11-22 | 1996-06-07 | Mitsubishi Electric Corp | 半導体製造装置およびこれによる半導体製造方法 |
JPH0997767A (ja) * | 1995-09-28 | 1997-04-08 | Kokusai Electric Co Ltd | 半導体製造装置の縦型炉 |
JPH09143737A (ja) * | 1995-11-22 | 1997-06-03 | Tokyo Electron Ltd | 成膜装置 |
US6454860B2 (en) * | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
JP4359965B2 (ja) * | 1999-07-27 | 2009-11-11 | 東京エレクトロン株式会社 | 成膜装置 |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
US6443435B1 (en) | 2000-10-23 | 2002-09-03 | Applied Materials, Inc. | Vaporization of precursors at point of use |
WO2004102648A2 (en) | 2003-05-09 | 2004-11-25 | Asm America, Inc. | Reactor surface passivation through chemical deactivation |
US20050271893A1 (en) * | 2004-06-04 | 2005-12-08 | Applied Microstructures, Inc. | Controlled vapor deposition of multilayered coatings adhered by an oxide layer |
US7071022B2 (en) | 2003-07-18 | 2006-07-04 | Corning Incorporated | Silicon crystallization using self-assembled monolayers |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US7390739B2 (en) | 2005-05-18 | 2008-06-24 | Lazovsky David E | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
KR100629172B1 (ko) * | 2004-11-08 | 2006-09-27 | 삼성전자주식회사 | 막 형성 장치 |
EP1951710A4 (en) | 2005-11-09 | 2010-08-25 | Univ Columbia | PHOTOCHEMICAL PROCESSES AND PHOTOACTIVE COMPOUNDS FOR MODIFYING SURFACES |
KR101169058B1 (ko) | 2006-03-10 | 2012-07-26 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
KR101138869B1 (ko) | 2006-12-22 | 2012-05-14 | 삼성전자주식회사 | 유기발광 디스플레이의 단위 화소부 구동소자의 제조방법 |
US20090057266A1 (en) * | 2007-08-27 | 2009-03-05 | Eda Tuncel | Line edge roughness control |
KR101078309B1 (ko) | 2009-03-25 | 2011-10-31 | 포항공과대학교 산학협력단 | 선택적 증착법을 이용한 반도체 소자의 콘택트 형성방법 |
KR101067345B1 (ko) | 2009-08-06 | 2011-09-23 | 한국과학기술원 | 패턴형성방법 및 패턴형성장치 |
WO2011036816A1 (ja) | 2009-09-28 | 2011-03-31 | 株式会社 東芝 | パターン形成方法 |
US8691675B2 (en) | 2009-11-25 | 2014-04-08 | International Business Machines Corporation | Vapor phase deposition processes for doping silicon |
US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
WO2012009371A2 (en) * | 2010-07-12 | 2012-01-19 | Applied Materials, Inc. | Compartmentalized chamber |
US8927066B2 (en) * | 2011-04-29 | 2015-01-06 | Applied Materials, Inc. | Method and apparatus for gas delivery |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US8747686B2 (en) * | 2012-01-27 | 2014-06-10 | Applied Materials, Inc. | Methods of end point detection for substrate fabrication processes |
JP2013154315A (ja) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置 |
KR101908346B1 (ko) | 2012-06-29 | 2018-10-17 | (주)아모레퍼시픽 | 차수를 포함하는 피부 노화 방지용 조성물 |
KR101387518B1 (ko) * | 2012-08-28 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
US20140099794A1 (en) * | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
JP2014236148A (ja) | 2013-06-04 | 2014-12-15 | 東京エレクトロン株式会社 | 有機分子膜の形成装置および形成方法 |
US9153457B2 (en) * | 2013-06-14 | 2015-10-06 | Tokyo Electron Limited | Etch process for reducing directed self assembly pattern defectivity using direct current positioning |
KR102076087B1 (ko) * | 2013-08-19 | 2020-02-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 불순물 적층 에피택시를 위한 장치 |
US9478361B2 (en) * | 2013-09-04 | 2016-10-25 | South Dakota Board Of Regents | Self-assembled organic monolayer hybrid materials and methods thereof |
US9525082B2 (en) | 2013-09-27 | 2016-12-20 | Sunpower Corporation | Solar cell contact structures formed from metal paste |
US9508561B2 (en) * | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
US9355922B2 (en) * | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100116207A1 (en) | 2008-11-07 | 2010-05-13 | Asm America, Inc. | Reaction chamber |
JP2014531508A (ja) | 2011-09-01 | 2014-11-27 | メムススター リミテッドMemsstar Limited | デバイス上にコーティングを堆積させる改善された堆積法 |
JP2014179466A (ja) | 2013-03-14 | 2014-09-25 | Applied Materials Inc | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
WO2015065790A1 (en) | 2013-11-01 | 2015-05-07 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma cvd technology |
US20160056071A1 (en) | 2014-08-20 | 2016-02-25 | Lam Research Corporation | Flowable dielectric for selective ultra low-k pore sealing |
JP2016046524A (ja) | 2014-08-22 | 2016-04-04 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッドの能動加熱および/またはペデスタルの冷却によって低温aldシステム内で安定した蒸着速度制御を行うための方法および装置 |
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TWI722880B (zh) | 2021-03-21 |
KR20200108512A (ko) | 2020-09-18 |
EP3449500A4 (en) | 2020-04-22 |
US11066747B2 (en) | 2021-07-20 |
KR102201927B1 (ko) | 2021-01-11 |
US20170306491A1 (en) | 2017-10-26 |
JP2019515493A (ja) | 2019-06-06 |
JP2023027047A (ja) | 2023-03-01 |
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CN109417042B (zh) | 2022-05-10 |
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JP7473614B2 (ja) | 2024-04-23 |
EP3449500A1 (en) | 2019-03-06 |
CN114975176A (zh) | 2022-08-30 |
KR20180128515A (ko) | 2018-12-03 |
KR102306693B1 (ko) | 2021-09-28 |
CN109417042A (zh) | 2019-03-01 |
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