JP7473614B2 - 自己組織化単分子層処理のための化学物質供給チャンバ - Google Patents
自己組織化単分子層処理のための化学物質供給チャンバ Download PDFInfo
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- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- IGMQODZGDORXEN-UHFFFAOYSA-N pentadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCS IGMQODZGDORXEN-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N pentadecanoic acid Chemical compound CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- ULIMUQCIZMJOHK-UHFFFAOYSA-N pentadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCP(O)(O)=O ULIMUQCIZMJOHK-UHFFFAOYSA-N 0.000 description 1
- CKVICYBZYGZLLP-UHFFFAOYSA-N pentylphosphonic acid Chemical compound CCCCCP(O)(O)=O CKVICYBZYGZLLP-UHFFFAOYSA-N 0.000 description 1
- NSETWVJZUWGCKE-UHFFFAOYSA-N propylphosphonic acid Chemical compound CCCP(O)(O)=O NSETWVJZUWGCKE-UHFFFAOYSA-N 0.000 description 1
- 239000005053 propyltrichlorosilane Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GEKDEMKPCKTKEC-UHFFFAOYSA-N tetradecane-1-thiol Chemical compound CCCCCCCCCCCCCCS GEKDEMKPCKTKEC-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
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- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 1
- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 description 1
- BNCXNUWGWUZTCN-UHFFFAOYSA-N trichloro(dodecyl)silane Chemical compound CCCCCCCCCCCC[Si](Cl)(Cl)Cl BNCXNUWGWUZTCN-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- RFMOODUJRPZGFS-UHFFFAOYSA-N trichloro(heptadecyl)silane Chemical compound CCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl RFMOODUJRPZGFS-UHFFFAOYSA-N 0.000 description 1
- SRQHGWJPIZXDTA-UHFFFAOYSA-N trichloro(heptyl)silane Chemical compound CCCCCCC[Si](Cl)(Cl)Cl SRQHGWJPIZXDTA-UHFFFAOYSA-N 0.000 description 1
- RYPYGDUZKOPBEL-UHFFFAOYSA-N trichloro(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl RYPYGDUZKOPBEL-UHFFFAOYSA-N 0.000 description 1
- LFXJGGDONSCPOF-UHFFFAOYSA-N trichloro(hexyl)silane Chemical compound CCCCCC[Si](Cl)(Cl)Cl LFXJGGDONSCPOF-UHFFFAOYSA-N 0.000 description 1
- UWUKCFJDVNCGML-UHFFFAOYSA-N trichloro(nonadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl UWUKCFJDVNCGML-UHFFFAOYSA-N 0.000 description 1
- SSBOTKQTCWQWMG-UHFFFAOYSA-N trichloro(nonyl)silane Chemical compound CCCCCCCCC[Si](Cl)(Cl)Cl SSBOTKQTCWQWMG-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- JUPFRFFJHFKOHE-UHFFFAOYSA-N trichloro(pentadecyl)silane Chemical compound CCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl JUPFRFFJHFKOHE-UHFFFAOYSA-N 0.000 description 1
- KWDQAHIRKOXFAV-UHFFFAOYSA-N trichloro(pentyl)silane Chemical compound CCCCC[Si](Cl)(Cl)Cl KWDQAHIRKOXFAV-UHFFFAOYSA-N 0.000 description 1
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 description 1
- LPMVYGAHBSNGHP-UHFFFAOYSA-N trichloro(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](Cl)(Cl)Cl LPMVYGAHBSNGHP-UHFFFAOYSA-N 0.000 description 1
- WLWBNHYYFCNHRR-UHFFFAOYSA-N trichloro(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](Cl)(Cl)Cl WLWBNHYYFCNHRR-UHFFFAOYSA-N 0.000 description 1
- AHEMBBKAVCEZKE-UHFFFAOYSA-N trichloro(undecyl)silane Chemical compound CCCCCCCCCCC[Si](Cl)(Cl)Cl AHEMBBKAVCEZKE-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- IPBROXKVGHZHJV-UHFFFAOYSA-N tridecane-1-thiol Chemical compound CCCCCCCCCCCCCS IPBROXKVGHZHJV-UHFFFAOYSA-N 0.000 description 1
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 description 1
- KREGXBHGJXTOKZ-UHFFFAOYSA-N tridecylphosphonic acid Chemical compound CCCCCCCCCCCCCP(O)(O)=O KREGXBHGJXTOKZ-UHFFFAOYSA-N 0.000 description 1
- AVYKQOAMZCAHRG-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AVYKQOAMZCAHRG-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- IJJXVFCJVQEXHZ-UHFFFAOYSA-N triethoxy(heptadecyl)silane Chemical compound CCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC IJJXVFCJVQEXHZ-UHFFFAOYSA-N 0.000 description 1
- SAWDTKLQESXBDN-UHFFFAOYSA-N triethoxy(heptyl)silane Chemical compound CCCCCCC[Si](OCC)(OCC)OCC SAWDTKLQESXBDN-UHFFFAOYSA-N 0.000 description 1
- OYGYKEULCAINCL-UHFFFAOYSA-N triethoxy(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC OYGYKEULCAINCL-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- HDYOCGKYEWQGDZ-UHFFFAOYSA-N triethoxy(nonadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC HDYOCGKYEWQGDZ-UHFFFAOYSA-N 0.000 description 1
- FZXOVEZAKDRQJC-UHFFFAOYSA-N triethoxy(nonyl)silane Chemical compound CCCCCCCCC[Si](OCC)(OCC)OCC FZXOVEZAKDRQJC-UHFFFAOYSA-N 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- ZJLGWINGXOQWDC-UHFFFAOYSA-N triethoxy(pentadecyl)silane Chemical compound CCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC ZJLGWINGXOQWDC-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- SVKDNKCAGJVMMY-UHFFFAOYSA-N triethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OCC)(OCC)OCC SVKDNKCAGJVMMY-UHFFFAOYSA-N 0.000 description 1
- IMAMKGXMSYGEGR-UHFFFAOYSA-N triethoxy(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](OCC)(OCC)OCC IMAMKGXMSYGEGR-UHFFFAOYSA-N 0.000 description 1
- BBWMWJONYVGXGQ-UHFFFAOYSA-N triethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OCC)(OCC)OCC BBWMWJONYVGXGQ-UHFFFAOYSA-N 0.000 description 1
- PPUHSHGIVZSPFO-UHFFFAOYSA-N trimethoxy(nonadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC PPUHSHGIVZSPFO-UHFFFAOYSA-N 0.000 description 1
- JEPXSTGVAHHRBD-UHFFFAOYSA-N trimethoxy(nonyl)silane Chemical compound CCCCCCCCC[Si](OC)(OC)OC JEPXSTGVAHHRBD-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- LCXXOYOABWDYBF-UHFFFAOYSA-N trimethoxy(pentadecyl)silane Chemical compound CCCCCCCCCCCCCCC[Si](OC)(OC)OC LCXXOYOABWDYBF-UHFFFAOYSA-N 0.000 description 1
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
- QSYYSIXGDAAPNN-UHFFFAOYSA-N trimethoxy(tridecyl)silane Chemical compound CCCCCCCCCCCCC[Si](OC)(OC)OC QSYYSIXGDAAPNN-UHFFFAOYSA-N 0.000 description 1
- -1 tris(dimethylamino)undecyl Chemical group 0.000 description 1
- CCIDWXHLGNEQSL-UHFFFAOYSA-N undecane-1-thiol Chemical compound CCCCCCCCCCCS CCIDWXHLGNEQSL-UHFFFAOYSA-N 0.000 description 1
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 1
- GKIQHTGBORJXKZ-UHFFFAOYSA-N undecylphosphonic acid Chemical compound CCCCCCCCCCCP(O)(O)=O GKIQHTGBORJXKZ-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Description
Claims (20)
- 基板処理装置であって、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された基板支持体と、
前記基板支持体の反対側に配置されたシャワーヘッドと、
前記チャンバ本体に連結されたリッドプレートと、
前記リッドプレートと前記シャワーヘッドとの間に配置されたバッキング板と、
前記バッキング板の反対側で前記リッドプレートに結合され、前記バッキング板および前記シャワーヘッドを介して前記処理空間と流体連通している射出アセンブリと、
前記射出アセンブリと流体連通している第1の蒸気生成アセンブリであって、自己組織化単分子層(SAM)前駆体を蒸気状態で前記処理空間に供給するように構成されている、第1の蒸気生成アセンブリと、
前記第1の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第1の加熱された供給導管と、
前記射出アセンブリと流体連通している第2の蒸気生成アセンブリであって、蒸気状態で前記処理空間に共反応物を供給するように構成されている第2の蒸気生成アセンブリと、
前記第2の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第2の加熱された供給導管と、
前記シャワーヘッド内に配置されたシャワーヘッドヒータと、
前記シャワーヘッドヒータを前記シャワーヘッド内に包み込むキャップと、
前記基板支持体の周りで径方向に配置されたポンピングライナーであって、
内側に向いた周辺表面と、
前記内側に向いた周辺表面から前記ポンピングライナーを貫通して延在する前記ポンピングライナーの開口と、を備える、ポンピングライナーと、
を備える基板処理装置。 - 前記基板支持体の反対側で前記シャワーヘッドに連結されたシャワーヘッドライナーであって、前記処理空間の体積を減少させるように構成されている、シャワーヘッドライナーをさらに備えている、請求項1に記載の装置。
- 前記シャワーヘッドが、アルミニウム、アルミニウム合金、ステンレス鋼、酸化アルミニウム、および窒化アルミニウムからなる群から選択される材料から形成される、請求項1に記載の装置。
- 前記第1の加熱された供給導管および前記第2の加熱された供給導管がヒータアセンブリで被覆されている、請求項1に記載の装置。
- 前記第1の蒸気生成アセンブリおよび前記第2の蒸気生成アセンブリが、アンプル又は直接液体噴射気化器である、請求項1に記載の装置。
- 基板処理装置であって、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された基板支持体と、
前記基板支持体の反対側に配置されたシャワーヘッドと、
前記チャンバ本体に連結されたリッドプレートと、
前記リッドプレートと前記シャワーヘッドとの間に配置されたバッキング板と、
前記バッキング板の反対側で前記リッドプレートに結合され、前記バッキング板および前記シャワーヘッドを介して前記処理空間と流体連通している射出アセンブリと、
前記射出アセンブリと流体連通している第1の蒸気生成アセンブリであって、自己組織化単分子層(SAM)前駆体を蒸気状態で前記処理空間に供給するように構成されている、第1の蒸気生成アセンブリと、
前記第1の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第1の加熱された供給導管と、
前記射出アセンブリと流体連通している第2の蒸気生成アセンブリであって、アンプル又は直接液体射出気化器であり、蒸気状態で前記処理空間に共反応物を供給するように構成されている第2の蒸気生成アセンブリと、
前記第2の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第2の加熱された供給導管と、
前記基板支持体の反対側で前記シャワーヘッドに連結されたシャワーヘッドライナーであって、
前記シャワーヘッドライナーが、前記処理空間の体積を減少させるように構成され、かつ、
前記シャワーヘッドの材料と前記シャワーヘッドライナーの材料が同一であり、
前記シャワーヘッドライナーが、
第1の内周及び前記シャワーヘッドと向き合う第1の環状表面を有する第1の環状部分、
前記シャワーヘッドから離れる方向に前記第1の環状部分から延在する第2の内周を有する第2の環状部分、並びに、
前記基板支持体が処理位置にある時に、前記第1の環状表面から遠ざかる方を向く第2の環状表面と前記基板支持体の外表面との間に間隙が形成されるように前記第2の環状表面で終端する内周面、及び前記第1の環状表面から前記第2の環状表面へと延在する外周面を備え、
前記シャワーヘッドライナー、前記基板支持体、及び前記シャワーヘッドライナーの前記第1の内周内で前記基板支持体と対向する前記シャワーヘッドの部分が、前記基板支持体が基板処理位置にある時に減少された前記処理空間を区切る、
シャワーヘッドライナーと、
前記基板支持体の周りで径方向に配置され、内側を向く円周面を含むポンピングライナーであって、当該ポンピングライナーの開口が、前記ポンピングライナーの前記内側を向く円周面から前記ポンピングライナーを通って延在し、前記基板支持体の外周と前記シャワーヘッドライナーの前記第2の環状表面との間の間隙を介して前記減少された処理空間と流体連通し、且つチャンバ排出部と流体連通してガス排出流路を画定し、それにより、不使用のSAM前駆体が、前記基板支持体の縁の上を、前記シャワーヘッドライナーの前記第2の環状表面と前記基板支持体の周方向表面との間に設けられた前記間隙を通って、前記ポンピングライナーの前記開口まで流れる、ポンピングライナーと
を備え、
前記シャワーヘッドライナーの前記外周面が、前記第1の環状部分から前記第2の環状部分まで、前記ポンピングライナーの前記内側を向く円周面と向かい合う、基板処理装置。 - 前記シャワーヘッドが内部に配置されたヒータを有し、当該ヒータが電源に接続されている、請求項6に記載の装置。
- 前記バッキング板が、前記シャワーヘッドへの近接を介して前記バッキング板の伝導熱を提供するためにシャワーヘッドに隣接して配置される、請求項7に記載の装置。
- 前記射出アセンブリと流体連通する洗浄ガス源をさらに備える、請求項6に記載の装置。
- 前記共反応物が、周囲空気、水蒸気、過酸化水素蒸気、有機アルコール蒸気、酸素ガス、及び水素ガスからなる群から選択される、請求項6に記載の装置。
- 前記シャワーヘッドが、アルミニウム、アルミニウム合金、ステンレス鋼、酸化アルミニウム、および窒化アルミニウムからなる群から選択される材料から形成される、請求項6に記載の装置。
- 前記第1の加熱された供給導管および前記第2の加熱された供給導管がヒータアセンブリで被覆されている、請求項6に記載の装置。
- 前記第1の蒸気生成アセンブリ及び前記第2の蒸気生成アセンブリが、50℃から200℃の間の温度で液体を気化するように構成されている、請求項6に記載の装置。
- 前記SAM前駆体が、ホスホン酸材料、チオール材料、シリルアミン材料、クロロシラン材料、オキシシラン材料、及びこれらの組み合わせからなる群から選択される、請求項6に記載の装置。
- 基板処理装置であって、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された基板支持体と、
前記基板支持体の反対側に配置されたシャワーヘッドと、
前記チャンバ本体に連結されたリッドプレートと、
前記リッドプレートと前記シャワーヘッドとの間に配置されたバッキング板と、
前記バッキング板の反対側で前記リッドプレートに結合され、前記バッキング板および前記シャワーヘッドを介して前記処理空間と流体連通している射出アセンブリと、
前記射出アセンブリと流体連通している第1の蒸気生成アセンブリであって、自己組織化単分子層(SAM)前駆体を蒸気状態で前記処理空間に供給するように構成されている、第1の蒸気生成アセンブリと、
前記第1の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第1の加熱された供給導管と、
前記射出アセンブリと流体連通している第2の蒸気生成アセンブリであって、アンプル又は直接液体射出気化器であり、蒸気状態で前記処理空間に共反応物を供給するように構成されている第2の蒸気生成アセンブリと、
前記第2の蒸気生成アセンブリと前記射出アセンブリとの間に配置された第2の加熱された供給導管と、
前記基板支持体と向き合って前記シャワーヘッドに連結されたシャワーヘッドライナーであって、第1の内周を有する第1の環状部分と、第2の内周を有し且つ前記シャワーヘッドから離れる方向に前記第1の環状部分から延在する第2の環状部分とを備え、
基板処理位置において、前記基板支持体の一部が、前記シャワーヘッドの前記第2の環状部分の一部によって囲まれ、前記シャワーヘッドライナーが、前記処理空間の体積を減少させるように構成され、
前記シャワーヘッドの材料と前記シャワーヘッドライナーの材料が同一であり、
前記シャワーヘッドライナーが、第1の内周及び前記シャワーヘッドと対向する第1の環状表面を有する第1の環状部分と、前記第1の環状部分から、前記シャワーヘッドから離れる方向に延在する第2の内周を有する第2の環状部分、並びに、前記基板支持体が前記基板処理位置にある時に、前記第1の環状表面から遠ざかる方を向く第2の環状表面と前記基板支持体の外表面との間に間隙が形成されるように前記第2の環状表面で終端する内周面と、前記第1の環状表面から前記第2の環状表面へと延在する外周面を備え、
前記シャワーヘッドライナー、前記基板支持体、及び前記シャワーヘッドライナーの前記第1の内周内で前記基板支持体と対向する前記シャワーヘッドの部分が、前記基板支持体が基板処理位置にある時に減少された前記処理空間を区切る、
シャワーヘッドライナーと、
前記基板支持体の周りで径方向に配置され、内側を向く円周面を含むポンピングライナーであって、当該ポンピングライナーの開口が、前記ポンピングライナーの前記内側を向く円周面から前記ポンピングライナーを通って延在し、前記基板支持体の外周と前記シャワーヘッドライナーの前記第2の環状表面との間の間隙を介して前記減少された処理空間と流体連通し、且つチャンバ排出部と流体連通してガス排出流路を画定し、それにより、不使用のSAM前駆体が、前記基板支持体の縁の上を、前記シャワーヘッドライナーの前記第2の環状表面と前記基板支持体の周方向表面との間に設けられた前記間隙を通って、前記ポンピングライナーの前記開口まで流れる、ポンピングライナーと
を備え、
前記シャワーヘッドライナーの前記外周面が、前記第1の環状部分から前記第2の環状部分まで、前記ポンピングライナーの前記内側を向く円周面と向かい合う、基板処理装置。 - 前記シャワーヘッドが内部に配置されたヒータを有し、当該ヒータが電源に接続されている、請求項15に記載の装置。
- 前記処理空間は、前記基板支持体と前記ポンピングライナーとの間の間隙を通って、チャンバ排出部と流体連通し、前記ポンピングライナーの前記開口と前記間隙がガス排気流路を画定する、請求項1に記載の装置。
- 前記シャワーヘッドに連結したシャワーヘッドライナーをさらに備え、前記シャワーヘッドライナーが前記処理空間の体積を減少させるように構成された、請求項1に記載の装置。
- 前記シャワーヘッドの材料と前記シャワーヘッドライナーの材料とが同じ材料であり、前記基板支持体が基板処理位置にあるときに、前記シャワーヘッドライナー、前記基板支持体、及び前記シャワーヘッドが前記処理空間を画定する、請求項18に記載の装置。
- 前記シャワーヘッドライナーが前記シャワーヘッドに、前記シャワーヘッドライナー内の1または複数の孔を通って配置された連結装置によって連結されている、請求項18に記載の装置。
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7046188B2 (ja) | 2018-08-02 | 2022-04-01 | 東京エレクトロン株式会社 | 成膜装置 |
KR20210155812A (ko) * | 2019-05-31 | 2021-12-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들 |
KR102280035B1 (ko) * | 2019-10-10 | 2021-07-21 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US11420217B2 (en) * | 2019-12-19 | 2022-08-23 | Applied Materials, Inc. | Showerhead for ALD precursor delivery |
US11242600B2 (en) * | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
US20230349893A1 (en) * | 2020-09-22 | 2023-11-02 | Mcmaster University | Lubricant-infused surface biosensing interface, methods of making and uses thereof |
US20220108872A1 (en) * | 2020-10-05 | 2022-04-07 | Applied Materials, Inc. | Bevel backside deposition elimination |
US11584993B2 (en) | 2020-10-19 | 2023-02-21 | Applied Materials, Inc. | Thermally uniform deposition station |
CN114261039A (zh) * | 2021-12-30 | 2022-04-01 | 广东粤港澳大湾区国家纳米科技创新研究院 | 一种模板钝化的工艺 |
JP2023100428A (ja) * | 2022-01-06 | 2023-07-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20240053803A (ko) | 2022-10-18 | 2024-04-25 | 에스케이스페셜티 주식회사 | 기판 처리 방법 및 이를 이용한 영역 선택적 박막 증착 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120009765A1 (en) | 2010-07-12 | 2012-01-12 | Applied Materials, Inc. | Compartmentalized chamber |
JP2014531508A (ja) | 2011-09-01 | 2014-11-27 | メムススター リミテッドMemsstar Limited | デバイス上にコーティングを堆積させる改善された堆積法 |
WO2015065790A1 (en) | 2013-11-01 | 2015-05-07 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma cvd technology |
US20160056071A1 (en) | 2014-08-20 | 2016-02-25 | Lam Research Corporation | Flowable dielectric for selective ultra low-k pore sealing |
JP2016046524A (ja) | 2014-08-22 | 2016-04-04 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッドの能動加熱および/またはペデスタルの冷却によって低温aldシステム内で安定した蒸着速度制御を行うための方法および装置 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148480A (ja) * | 1994-11-22 | 1996-06-07 | Mitsubishi Electric Corp | 半導体製造装置およびこれによる半導体製造方法 |
JPH0997767A (ja) * | 1995-09-28 | 1997-04-08 | Kokusai Electric Co Ltd | 半導体製造装置の縦型炉 |
JPH09143737A (ja) * | 1995-11-22 | 1997-06-03 | Tokyo Electron Ltd | 成膜装置 |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6454860B2 (en) * | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
JP4359965B2 (ja) * | 1999-07-27 | 2009-11-11 | 東京エレクトロン株式会社 | 成膜装置 |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
US6443435B1 (en) | 2000-10-23 | 2002-09-03 | Applied Materials, Inc. | Vaporization of precursors at point of use |
KR101090895B1 (ko) | 2003-05-09 | 2011-12-08 | 에이에스엠 아메리카, 인코포레이티드 | 화학적 비활성화를 통한 반응기 표면의 패시베이션 |
US20050271893A1 (en) * | 2004-06-04 | 2005-12-08 | Applied Microstructures, Inc. | Controlled vapor deposition of multilayered coatings adhered by an oxide layer |
US7071022B2 (en) | 2003-07-18 | 2006-07-04 | Corning Incorporated | Silicon crystallization using self-assembled monolayers |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US7390739B2 (en) | 2005-05-18 | 2008-06-24 | Lazovsky David E | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
KR100629172B1 (ko) * | 2004-11-08 | 2006-09-27 | 삼성전자주식회사 | 막 형성 장치 |
US8158832B2 (en) | 2005-11-09 | 2012-04-17 | The Trustees Of Columbia University In The City Of New York | Photochemical methods and photoactive compounds for modifying surfaces |
KR101169058B1 (ko) | 2006-03-10 | 2012-07-26 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 그 제조방법 |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
KR101138869B1 (ko) | 2006-12-22 | 2012-05-14 | 삼성전자주식회사 | 유기발광 디스플레이의 단위 화소부 구동소자의 제조방법 |
US20090057266A1 (en) * | 2007-08-27 | 2009-03-05 | Eda Tuncel | Line edge roughness control |
CN102203910B (zh) * | 2008-11-07 | 2014-12-10 | Asm美国公司 | 反应室 |
KR101078309B1 (ko) | 2009-03-25 | 2011-10-31 | 포항공과대학교 산학협력단 | 선택적 증착법을 이용한 반도체 소자의 콘택트 형성방법 |
KR101067345B1 (ko) | 2009-08-06 | 2011-09-23 | 한국과학기술원 | 패턴형성방법 및 패턴형성장치 |
JP5318217B2 (ja) | 2009-09-28 | 2013-10-16 | 株式会社東芝 | パターン形成方法 |
US8691675B2 (en) | 2009-11-25 | 2014-04-08 | International Business Machines Corporation | Vapor phase deposition processes for doping silicon |
US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
US8927066B2 (en) * | 2011-04-29 | 2015-01-06 | Applied Materials, Inc. | Method and apparatus for gas delivery |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US8747686B2 (en) | 2012-01-27 | 2014-06-10 | Applied Materials, Inc. | Methods of end point detection for substrate fabrication processes |
JP2013154315A (ja) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置 |
KR101908346B1 (ko) | 2012-06-29 | 2018-10-17 | (주)아모레퍼시픽 | 차수를 포함하는 피부 노화 방지용 조성물 |
KR101387518B1 (ko) * | 2012-08-28 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
US20140099794A1 (en) * | 2012-09-21 | 2014-04-10 | Applied Materials, Inc. | Radical chemistry modulation and control using multiple flow pathways |
JP5602903B2 (ja) * | 2013-03-14 | 2014-10-08 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
JP2014236148A (ja) | 2013-06-04 | 2014-12-15 | 東京エレクトロン株式会社 | 有機分子膜の形成装置および形成方法 |
US9153457B2 (en) | 2013-06-14 | 2015-10-06 | Tokyo Electron Limited | Etch process for reducing directed self assembly pattern defectivity using direct current positioning |
WO2015026491A1 (en) * | 2013-08-19 | 2015-02-26 | Applied Materials, Inc. | Apparatus for impurity layered epitaxy |
US9478361B2 (en) * | 2013-09-04 | 2016-10-25 | South Dakota Board Of Regents | Self-assembled organic monolayer hybrid materials and methods thereof |
US9525082B2 (en) | 2013-09-27 | 2016-12-20 | Sunpower Corporation | Solar cell contact structures formed from metal paste |
US9508561B2 (en) | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
US9355922B2 (en) * | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
-
2017
- 2017-03-24 JP JP2018555679A patent/JP2019515493A/ja active Pending
- 2017-03-24 KR KR1020187033883A patent/KR20180128515A/ko active Application Filing
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-
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- 2022-11-04 JP JP2022176882A patent/JP7473614B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120009765A1 (en) | 2010-07-12 | 2012-01-12 | Applied Materials, Inc. | Compartmentalized chamber |
JP2014531508A (ja) | 2011-09-01 | 2014-11-27 | メムススター リミテッドMemsstar Limited | デバイス上にコーティングを堆積させる改善された堆積法 |
WO2015065790A1 (en) | 2013-11-01 | 2015-05-07 | Applied Materials, Inc. | Low temperature silicon nitride films using remote plasma cvd technology |
US20160056071A1 (en) | 2014-08-20 | 2016-02-25 | Lam Research Corporation | Flowable dielectric for selective ultra low-k pore sealing |
JP2016046524A (ja) | 2014-08-22 | 2016-04-04 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッドの能動加熱および/またはペデスタルの冷却によって低温aldシステム内で安定した蒸着速度制御を行うための方法および装置 |
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