CN106536448B - 中k值ltcc组合物和装置 - Google Patents
中k值ltcc组合物和装置 Download PDFInfo
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- CN106536448B CN106536448B CN201580037339.1A CN201580037339A CN106536448B CN 106536448 B CN106536448 B CN 106536448B CN 201580037339 A CN201580037339 A CN 201580037339A CN 106536448 B CN106536448 B CN 106536448B
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- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 238000001354 calcination Methods 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000003989 dielectric material Substances 0.000 claims abstract description 29
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 40
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 40
- 239000007787 solid Substances 0.000 claims description 23
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910052682 stishovite Inorganic materials 0.000 claims description 15
- 229910052905 tridymite Inorganic materials 0.000 claims description 15
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 10
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 7
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 7
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229910052878 cordierite Inorganic materials 0.000 claims description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 229910052845 zircon Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 239000002243 precursor Substances 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 abstract description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 239000004020 conductor Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- -1 alkaline earth metal titanate Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910020442 SiO2—TiO2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C04B2235/77—Density
Abstract
LTCC装置是由电介质组合物生产的，该组合物包含前体材料的混合物，前体材料混合物通过煅烧形成了电介质材料，该材料包含碱土金属的钛酸盐基质，该基质是用选自稀土元素、氧化铝、氧化硅和氧化铋的至少一种掺杂的。
Description
发明背景
1.发明领域
本发明涉及电介质组合物，并且更具体的涉及一种掺杂的钛酸钡基电介质组合物，其可以用于低温共烧陶瓷(LTCC)应用，具有贵金属金属化。
2.相关领域说明
用于无线应用中的LTCC系统所用的现有技术的材料包括K为4-8和Q因子大于500(测量频率1MHZ)的电介质。
发明内容
日益需要这样的电介质材料，其具有10-120的较高的K值和大于500(越高越好)的Q值。还需要可以与现有技术的LTCC电介质共煅烧(没有翘曲，并且保持了良好的附着性)的材料，特别是L8带子。
本发明涉及在煅烧后Q值大于500和大于1000的电介质材料。
本发明涉及(a)适于中K LTCC应用的电介质材料组合物，(b)在875℃或者更低的峰值温度煅烧的电介质材料，(c)电介质材料，其可以单独煅烧以及与现有技术的BaO-CaO-B2O3-Al2O3-SiO2-TiO2带子电介质共煅烧，具有良好的附着性并且在界面处没有翘曲和不适当的反应。
本发明的电介质组合物包含平均粒径(D50粒度)是大约0.5-大约5微米的粒子的均匀致密微观结构。均匀和致密粒子微观结构在实现高可靠性多层电容器(具有薄于5微米的电介质层)中是关键的。
在一种实施方案中，本发明涉及一种组合物，其包含前体材料混合物，前体材料混合物通过煅烧形成了电介质材料，电介质材料包含用至少一种稀土元素掺杂的钛酸钡或者钛酸钙基质。
在一种实施方案中，本发明涉及一种组合物，其包含前体材料混合物，前体材料混合物通过煅烧形成了电介质材料，电介质材料包含碱土金属的钛酸盐例如钛酸钡和/或钛酸钙基质，该基质是用选自由铋、钕、钐、钆和镧组成的组的至少一种掺杂的。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约0.5wt％-大约50wt％(BaO+CaO+SrO+MgO)；
大约0.1wt％-大约60wt％(Al2O3+B2O3)；
大约0.1wt％-大约60wt％(SiO2+TiO2+ZrO2)
大约0wt％-大约40wt％Bi2O3；
大约0wt％-大约35wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
大约0wt％-大约10wt％ZnO；
大约0wt％-大约10wt％CuO；和
大约0wt％-大约8wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约5wt％-大约25wt％(BaO+CaO+SrO+MgO)；
大约0.5wt％-大约45wt％(Al2O3+B2O3)；
大约3wt％-大约58wt％(SiO2+TiO2+ZrO2)；
大约1wt％-大约30wt％Bi2O3；
大约0wt％-大约30wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
大约0.1wt％-大约10wt％ZnO；
大约0.1wt％-大约10wt％CuO；和
大约0.1wt％-大约5wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约14wt％-大约27wt％(BaO+CaO+SrO+MgO)；
大约1wt％-大约43wt％(Al2O3+B2O3)；
大约21wt％-大约58wt％(SiO2+TiO2+ZrO2)；
大约8wt％-大约20wt％Bi2O3；
大约0.1wt％-大约20wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
大约0.1wt％-大约5wt％ZnO；
大约0.1wt％-大约5wt％CuO；和
大约0.1wt％-大约3wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约10wt％-大约28wt％(BaO+CaO+SrO+MgO)；
大约1wt％-大约13wt％(Al2O3+B2O3)；
大约22wt％-大约58wt％(SiO2+TiO2+ZrO2)；
大约9wt％-大约19wt％Bi2O3；
大约0wt％-大约28wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
大约1wt％-大约5wt％ZnO；
大约0.1wt％-大约3wt％CuO；和
大约0.5wt％-大约3wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约5wt％-大约50wt％(BaO+CaO+SrO+MgO)；
大约0.1wt％-大约50wt％(Al2O3+B2O3)；
大约0.1wt％-大约50wt％(SiO2+TiO2+ZrO2)；和
大约0.1-40wt％Bi2O3。
这种实施方案可以进一步包含选自由下面的物质组成的组的至少一种：
大约0.1wt％-大约10wt％ZnO；
大约0.1wt％-大约30wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
大约0.1wt％-大约10wt％CuO；和
大约0.1wt％-大约10wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约0.5wt％-大约50wt％BaO；
大约0wt％-大约40wt％CaO；
大约0wt％-大约10wt％SrO；
大约0wt％-大约10wt％ZnO；
大约0.1wt％-大约20wt％B2O3；
大约0wt％-大约40wt％Al2O3；
大约0wt％-大约40wt％SiO2；
大约1wt％-大约70wt％TiO2；
大约0wt％-大约30wt％Bi2O3；
大约0-大约30wt％Nd2O3；
大约0-大约40wt％Sm2O3；
大约0-大约10wt％CuO；和
大约0-大约10wt％LiF。
在这种实施方案的一种替代中，所述糊包括选自由下面的物质组成的组至少一种：
大约0.1wt％-大约10wt％SrO；
大约0.1wt％-大约10wt％ZnO；
大约0.1wt％-大约40wt％Al2O3；
大约0.1wt％-大约40wt％SiO2；
大约0.1wt％-大约30wt％Bi2O3；
大约0.1-大约30wt％Nd2O3；
大约0.1-大约40wt％Sm2O3；
大约0.1-大约10wt％CuO；和
大约0.1-大约10wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约5wt％-大约25wt％BaO；
大约0wt％-大约20wt％CaO；
大约0wt％-大约5wt％SrO；
大约0wt％-大约7wt％ZnO；
大约0.5wt％-大约25wt％B2O3；
大约0wt％-大约35wt％Al2O3；
大约1wt％-大约35wt％SiO2；
大约2wt％-大约65wt％TiO2；
大约0wt％-大约20wt％Bi2O3；
大约0wt％-大约25wt％Nd2O3；
大约0wt％-大约35wt％Sm2O3；
大约0wt％-大约5wt％CuO；和
大约0wt％-大约5wt％LiF。
在这种实施方案的一种替代中，所述糊包括选自由下面的物质组成的组的至少一种：
大约0.1wt％-大约20wt％CaO；
大约0.1wt％-大约5wt％SrO；
大约0.1wt％-大约7wt％ZnO；
大约0.1wt％-大约35wt％Al2O3；
大约0.1wt％-大约20wt％Bi2O3；
大约0.1wt％-大约25wt％Nd2O3；
大约0.1wt％-大约35wt％Sm2O3；
大约0.1wt％-大约5wt％CuO；和
大约0.1wt％-大约5wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约15wt％-大约25wt％BaO；
大约0wt％-大约15wt％CaO；
大约0wt％-大约3wt％SrO；
大约0wt％-大约6wt％ZnO；
大约1wt％-大约15wt％B2O3；
大约0wt％-大约30wt％Al2O3；
大约0wt％-大约30wt％SiO2；
大约3wt％-大约60wt％TiO2；
大约0wt％-大约17wt％Bi2O3；
大约0wt％-大约20wt％Nd2O3；
大约0wt％-大约30wt％Sm2O3；
大约0wt％-大约3wt％CuO；和
大约0wt％-大约3wt％LiF。
在这种实施方案的一种替代中，所述糊包括选自由下面的物质组成的组的至少一种：
大约0.1wt％-大约15wt％CaO；
大约0.1wt％-大约3wt％SrO；
大约0.1wt％-大约6wt％ZnO；
大约0.1wt％-大约30wt％Al2O3；
大约0.1wt％-大约30wt％SiO2；
大约0.1wt％-大约17wt％Bi2O3；
大约0.1wt％-大约20wt％Nd2O3；
大约0.1wt％-大约30wt％Sm2O3；
大约0.1wt％-大约3wt％CuO；和
大约0.1wt％-大约3wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约0.5wt％-大约50wt％BaO；
大约0.5wt％-大约60wt％TiO2；
大约0.1wt％-大约40wt％Bi2O3；
大约0.1wt％-大约30wt％SiO2；
大约0.1wt％-大约30wt％ZnO；
大约0.1wt％-大约40wt％B2O3；
大约0.1wt％-大约30wt％CuO；和
大约0.1wt％-大约30wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约5wt％-大约40wt％BaO；
大约10wt％-大约60wt％TiO2；
大约5wt％-大约25wt％Bi2O3；
大约0.1wt％-大约15wt％SiO2；
大约0.1wt％-大约15wt％ZnO；
大约0.1wt％-大约15wt％B2O3；
大约0.1wt％-大约15wt％CuO；和
大约0.1wt％-大约15wt％LiF。
在这种实施方案的一种替代中，
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约15wt％-大约30wt％BaO；
大约40wt％-大约57wt％TiO2；
大约8wt％-大约18wt％Bi2O3；
大约0.1wt％-大约5wt％SiO2；
大约0.1wt％-大约5wt％ZnO；
大约0.1wt％-大约5wt％B2O3；
大约0.1wt％-大约5wt％CuO；和
大约0.1wt％-大约5wt％LiF。
在另一实施方案中，本发明涉及一种无铅和无镉的电介质糊组合物，其包含固体部分，该固体部分包含：
大约12wt％-大约18wt％BaO；
大约0.1wt％-大约5wt％CaO；
大约0.1wt％-大约7wt％ZnO；
大约0.1wt％-大约5wt％B2O3；
大约30wt％-大约40wt％TiO2；
大约8wt％-大约16wt％Bi2O3；
大约0wt％-大约3wt％CuO；和
大约0.1wt％-大约3wt％LiF。
在另一实施方案中，本发明涉及一种煅烧的电或者电子元件，其包含本文公开的在煅烧之前的任何电介质糊，以及导电糊，该导电糊在煅烧之前包含：(a)60-90wt％的Ag+Pd+Pt+Au，(b)1-10wt％的添加剂，其选自由过渡金属的硅化物、碳化物、氮化物和硼化物组成的组，(c)0.5-10wt％的至少一种玻璃料(glass frit)，和(d)10-40wt％的有机部分。该电或者电子元件可以是高Q谐振器、通带滤波器、无线包装系统及其组合。
在另一实施方案中，本发明涉及一种形成电子元件的方法，其包含：将本文公开的电介质糊施用到基底上；将该基底在足够的温度煅烧，来烧结该电介质材料。
在另一实施方案中，本发明涉及一种形成电子元件的方法，其包含将带子层合到电介质糊上。该带子可以包含固体部分，该固体部分包含5-25wt％BaO、1-10wt％CaO、2-13wt％B2O3、30-55wt％Al2O3、15-40wt％SiO2和0.01-13wt％TiO2。
多个实施方案包括方法：共煅烧至少一层本文公开的任何无铅和无镉的电介质材料或者糊和与其相组合的介电常数小于10的带子或者糊的至少一种交替的单独的层，来形成多层基底，其中交替的层具有不同的介电常数。
在另一实施方案中，本发明涉及一种形成电子元件的方法，其包含将本文公开的任何电介质材料的粒子施用到基底上，并且将该基底在足够的温度煅烧来烧结该电介质材料。应当理解本文中每个数值(百分比、温度等)都假定为是用“大约”作为前缀的。
在另一实施方案中，本发明涉及一种煅烧的电介质材料或者糊，其介电常数K是10-100，优选20-80。
在本文的任何实施方案中，该电介质材料可以包含不同的相，例如任意比例的结晶和无定形，例如1：99-99：1(结晶：无定形)，其是以mol％或者wt％表达的，其他比例包括10：90、20：80、30：70、40：60、50：50、60：40、70：30、80：20和90：10以及处于其之间的全部值。在一种实施方案中，该电介质糊包括10-30wt％的结晶电介质和70-90wt％的无定形电介质。
本发明的前述和其他特征在下文中更充分的描述并在权利要求中具体指出，下面的说明书更详细的阐述了本发明的某些示例性实施方案，但是它们仅仅是可以使用本发明的原则几个不同方式的指示。
附图说明
图1图示了本发明电解质的煅烧曲线。
图2图示了本发明电解质的热机械分析。
具体实施方式
LTCC(低温共烧陶瓷)是一种多层玻璃陶瓷基底技术，其是在相对低的煅烧温度(小于1000℃)与低电阻金属导体例如Ag、Au、Pt或者Pd或者其组合共煅烧的。有时候它被称作“玻璃陶瓷”，因为它的主要成分可以由玻璃和氧化铝或者其他陶瓷填料来组成。一些LTCC配料是再结晶玻璃。本文中的玻璃可以以玻璃料形式提供，其可以原位形成或者加入组合物中。在一些情况中，可以在非氧化性气氛中，例如氧分压是10-12到10-8的气氛中理想地使用贱金属例如镍及其合金。“贱金属”是除了金、银、钯和铂的任何金属。合金化的金属可以包括锰、铬、钴和铝。
切割来自电介质材料的浆料的带式流延，并且形成称作通孔的孔，来在层间形成电连接。将该通孔用导电糊填充。然后根据需要沿着共煅烧电阻印刷电路图案。堆叠多层印刷基底。将热和压力施加到该堆叠体来将层结合在一起。然后进行低温(<1000℃)烧结。所烧结的堆叠体锯割成最终的尺寸，并且根据需要完成后煅烧工艺。
可用于汽车应用的多层结构可以具有大约5个陶瓷层，例如3-7或者4-6个。在RF应用中，结构可以具有10-25个陶瓷层。作为配线基底，可以使用5-8个陶瓷层。
电介质糊。一种用于形成电介质层的糊，可以通过混合有机载体与本文所公开的电介质原材料来获得。还有用的是前体化合物(碳酸盐、硝酸盐、硫酸盐、磷酸盐)，其通过煅烧转化成本文所述的氧化物和复合氧化物。该电介质材料是通过选择含有这些氧化物的多种化合物，或者这些氧化物的多种前体，并且将它们以适当的比例混合来获得的。确定电介质原材料中这些化合物的比例，以使得在煅烧后可以获得期望的电介质层组合物。该电介质原材料(如本文其他处所公开的)通常以粉末形式使用，平均粒度是大约0.1-大约3微米，更优选大约1微米或更低。
有机载体。本文的糊包括有机部分。该有机部分是或者包括有机载体，其是有机溶剂中的粘合剂或者水中的粘合剂。本文所用的粘合剂的选择不是关键的；常规粘合剂例如乙基纤维素、聚乙烯基丁醇、乙基纤维素和羟丙基纤维素及其组合是适当的，其处于溶剂中。该有机溶剂也不是关键的，并且可以根据具体施用方法(即，印刷或者覆盖)而选自常规有机溶剂例如丁基卡必醇、丙酮、甲苯、乙醇、二甘醇丁醚、2,2,4-三甲基戊二醇单异丁酸酯
α-萜品醇、β-萜品醇、γ-萜品醇、十三烷醇、二甘醇乙基醚
二甘醇丁基醚(Butyl
)和丙二醇及其混合物，在
商标下市售自美国田纳西州金斯波特市的伊士曼化学公司(Eastman Chemical Company,Kingsport,TN)的产品；在
和
商标下市售自美国密歇根州米德兰市的陶氏化学公司(Dow Chemical Co.,Midland,MI)的产品。
对于本发明的电介质糊的有机部分没有特别限制。在一种实施方案中，本发明的电介质糊包括大约10wt％-大约40wt％的有机部分，或者大约10wt％-大约30wt％的有机部分。可选的，该糊可以包含大约1-5wt％的粘合剂和大约10-50wt％的有机溶剂，并且补足量是电介质组分(固体部分)。在一种实施方案中，本发明的电介质糊包括大约60-大约90wt％的别处公开的固体部分，和大约10wt％-大约40wt％的本段和前段所述的有机部分。如果需要，本发明的糊可以包含高至大约10wt％的其他添加剂例如分散剂、增塑剂、电介质化合物和绝缘化合物。
填料。为了使得不同电介质组合物的带层之间的膨胀失配最小化，可以将填料例如堇青石、氧化铝、锆石、熔融石英、铝硅酸盐及其组合以1-30wt％，优选2-20wt％和更优选2-15wt％的量加入本文的一种或多种电介质糊中。
煅烧。所述电介质堆叠体(两层或者更多层)然后在一个气氛中煅烧，该气氛是根据形成内电极层的糊中导体的类型来决定的。煅烧是在大约700-大约1000℃，优选大约800-大约900℃，更优选大约825-大约875℃进行的。该煅烧可以在空气中进行。可选的，该煅烧气氛的氧分压可以是大约10-12-大约10-8大气压。当监控氧气浓度时，应当避免在低于大约10-12大气压的分压的烧结，因为在这样的低压下，导体会反常烧结并会与电介质层分离；在氧分压高于大约10-8大气压时，该内电极层会被氧化。但是，还原性气氛(H2、N2或者H2/N2)会不期望的将电介质糊中的Bi2O3还原成金属铋。
本文公开的LTCC组合物和装置的应用包括通带滤波器(高通或者低通)、用于通信的无线发射机和接收机，其包括蜂窝应用、功率放大模块(PAM)、RF前端模块(FEM)、WiMAX2模块、LTE高级模块、传输控制单元(TCU)、电子动力转向(EPS)、发动机管理系统(EMS)、不同的传感器模块、雷达模块、压力传感器、照相机模块、小型调谐器模块、用于装置和元件的薄型模块和集成电路测试仪板。通带滤波器包含两个主要零件，一个是电容器和另一个是电感器。低K材料对于设计电感器是良好的，但是不适于设计电容器，这归因于需要活性更大的区域来产生足够的电容。高K材料将导致相反的结果。本发明人已经发现低K(4-8)LTCC材料与中K(10-100)LTCC材料可以共煅烧并制成单个元件，低K材料可以用于设计电感器区域，高K材料可以用于设计电容器区域来优化性能。
实施例
提供下面的实施例来说明本发明优选的方面，并非打算限制本发明的范围。
概述。单个材料的评价；L8、L20、L40和ULF840。
实施例1.L8粉末。
表1.L8VWG粉末性能
| 性能 | 值 |
| 热膨胀(室温-260℃)(×10<sup>-7</sup>/℃) | 50.0 |
| 密度(g/cc) | 3.35 |
| 表面积(m<sup>2</sup>/g) | 3.1 |
| K值 | 7.4 |
| Q值 | >1000 |
| 粒度(微米) | |
| D<sub>10</sub> | 1.30 |
| D<sub>50</sub> | 2.50 |
| D<sub>90</sub> | 5.80 |
L8VWG带子样品是使用由PVB树脂体系和标准刮刀流延组成的浆料来生产的。层合带样品是使用3000psi等静压层合条件来生产的。将该层合零件在825℃、850℃和875℃煅烧，停留时间是15、30和60分钟来建立煅烧范围。下表显示了生坯层合体的密度、煅烧层合体的密度、所测量的XY收缩率和％理论密度。
表2.L8VWG带层合体煅烧基质
实施例2.L20电介质材料是根据下表3所包括的配方来制备的。
表3.L20电介质配方
| 氧化物 | wt％ |
| BaO | 0.5-50 |
| CaO | 0.1-40 |
| B<sub>2</sub>O<sub>3</sub> | 0.1-50 |
| Al<sub>2</sub>O<sub>3</sub> | 0-20 |
| SiO<sub>2</sub> | 0.1-40 |
| TiO<sub>2</sub> | 1-40 |
| Bi<sub>2</sub>O<sub>3</sub> | 0.1-40 |
| Nd<sub>2</sub>O<sub>3</sub> | 0.1-30 |
L20电介质材料的电性能和物理性能在下表4中给出。
表4.本发明的L20电介质材料的电性能和物理性能
| 性能 | 值 |
| 热膨胀(室温-260℃×10<sup>-7</sup>/℃) | 87.0 |
| 密度g/cc | 4.34 |
| K值 | 22.2 |
| Q值 | 1050 |
| 粒度(微米) | |
| D<sub>10</sub> | 1.69 |
| D<sub>50</sub> | 2.81 |
| D<sub>90</sub> | 4.80 |
| D<sub>95</sub> | 5.57 |
表5.在2密耳白色聚对苯二甲酸乙二醇酯上使用B74001无邻苯二甲酸酯粘合剂流延料生产L20浆料来形成带子。该L20带子具有下面的性能：
表6.L20带子的拉伸强度数据在下表中给出。
生产L20带子层合体用于测定煅烧密度、XY收缩率和拱形率。将在3000psi生产的大约0.040英寸厚的L20带子层合体生坯切割成0.5英寸×0.5英寸。
将L20的层合体在850℃使用塞拉(Sierra)热窑炉以图1所示的曲线煅烧30分钟。厚度小于50密耳(1.27毫米)的零件通常使用2℃/分钟升温速率来烘烤，这取决于材料负载量。对于厚度超过50密耳(1.27毫米)的零件，该烘烤煅烧升温速率是1℃/分钟。有利的是至少通过烧掉粘合剂来提供50空气交换/小时的空气交换速率。该煅烧升温速率是4-8℃/分钟，从450℃到850℃，在850℃停留30分钟。
煅烧结果。L20生坯层合体是在ZrO2毡上煅烧的。零件还使用C12碳调节器带子在ZrO2调节器上煅烧。
表7.空白层合体的煅烧数据。
| L20煅烧 | 煅烧密度 | ％理论密度 | ％XY收缩率 | ％拱形率 |
| 850℃-30min | 3.91g/cc | 90.1 | 15.3 | 1.02 |
对于煅烧的L20-1210号薄片，不存在可测出的拱形率。
电性能。用可后煅烧的Au表面导体(CN30-025JH)，使用后煅烧步骤(850℃，60分钟-带式炉)来在煅烧的L20电介质上产生导体，并且形成单板电容器，用于测定电容、％df、K和Q。在1MHz的设定值，使用HP4192A LF阻抗计，如表8所示：
表8
| 电容pFd | ％df | K值 | Q |
| 26.4 | 0.0009 | 21.2 | 1111 |
实施例3.L40带子是使用PVB树脂体系和标准刮刀流延成型工艺来生产的。
表9：L40带子性能。
| 带厚度-微米 | 生坯片密度(g/cc) | 层合体密度(g/cc) |
| 35 | 2.17 | 2.87 |
生产来测定煅烧密度和XY收缩率的L40带子层合体是0.034英寸厚度的，其是在3000psi生产的，并且生坯切割成0.5英寸×0.5英寸。将该L40层合体在850℃使用塞拉热窑炉根据如上所述的图1的曲线煅烧30分钟。
表10：L40空白层合体的煅烧结果：
| L40煅烧曲线 | 煅烧密度-g/cc | ％XY收缩率 |
| 850℃30分钟 | 4.26 | 20.8 |
电性能；用可后煅烧的Au表面导体(CN30-025JH)，使用后煅烧步骤(850℃，60分钟-带式炉)来在煅烧的L40电介质上产生导体，并且形成单板电容器，用于测定电容、％df、K和Q。在1MHz的设定值，使用HP4192A LF阻抗计：
表11：L40电数据
| 电容pFd | ％df | K值 | Q |
| 53.02 | 0.0005 | 46.1 | 2000 |
实施例4.ULF840是一种市售电介质粉末，具有下面的典型性能，如表12所示。
表12.
| 性能 | 值 |
| 密度g/cc | 5.60 |
| K值 | 84 |
| Q值 | >3000 |
| 粒度(微米) | |
| D10 | 0.4 |
| D50 | 0.7 |
| D90 | 1.1 |
| 表面积(m2/g) | 6.2 |
用于表12的评估所生产的ULF840带子是使用PVB基树脂体系来制备的，如表13所示。
表13.
| 带厚度密耳 | 生坯片密度g/cc | 煅烧密度g/cc |
| 1.16 | 2.63 | 5.60 |
实施例5.本发明人研究了在生坯带子层合结构中，共煅烧费罗(Ferro)的L8LTCC电介质材料和不同K值电介质材料。已经初始选择了三种材料(费罗的ULF840、L20和L40)作为候选，来评估与L8的共煅烧相容性。该初始工作包括共煅烧四种材料的带子样品(使用标准L8，850℃煅烧曲线)，来测定共煅烧相容性。
材料：
1)L8——10密耳厚的带子
2)ULF840——1.16密耳厚的带子
3)L40——1.27密耳厚的带子
4)L20——3密耳厚的带子
程序：
1)层合体是以2英寸×2英寸的样式，以下面的方式来生产的：
A.三组层合体使用L8带作为基材，通过将单层的ULF840、L20和L40加到L8基材/带材来制造单独的零件的。该合并的材料和零件厚度包含>90％的L8带子。
2)使用等静压压机，在70℃、3000psi层压10分钟，10分钟后没有压力。
3)在850℃和875℃以图1所示的标准L8曲线(烘烤、升温和停留时间)煅烧。观察用于拱形或翘曲的煅烧零件，并且在合适时测量。
表14.生坯片密度
| 材料 | 生坯片密度g/cc |
| L8-10 | 1.89 |
| ULF840 | 2.63 |
| LTCC40 | 2.38 |
| L20 | 2.51 |
用于三组的显微照片(未示出)显示了L8/L20优异的平坦度，并且对于L8/ULF840和L8/L40需要调节。
图2显示了热机械分析(TMA)数据，其将L8与ULF840、L20和L40进行对比。
另外的优点和改变将是本领域技术人员容易想到的。所以，本发明在它较宽的方面不限于本文所示和所述的具体细节和示例性实施例。因此，可以进行不同的改变，而不背离附加的权利要求及其等价物所定义的总的发明构思的主旨或者范围。
Claims (21)
1.一种无铅和无镉的电介质糊组合物，其在煅烧之前包含固体部分，该固体部分包含：
14wt％-27wt％(BaO+CaO+SrO+MgO)；
1wt％-43wt％(Al2O3+B2O3)；
21wt％-58wt％(SiO2+TiO2+ZrO2)；
8wt％-20wt％Bi2O3；
0.1wt％-20wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
0.1wt％-5wt％ZnO；
0.1wt％-5wt％CuO；和
0.1wt％-3wt％LiF。
2.一种包含权利要求1所述的电介质糊组合物的无铅和无镉的电介质组合物，其中该组合物包括10-30wt％的结晶电介质和70-90wt％的无定形电介质。
3.根据权利要求1所述的无铅和无镉的电介质糊组合物，包括0.1wt％-35wt％Sm2O3。
4.一种无铅和无镉的电介质糊组合物，其在煅烧之前包含固体部分，该固体部分包含：
10wt％-28wt％(BaO+CaO+SrO+MgO)；
1wt％-13wt％(Al2O3+B2O3)；
22wt％-58wt％(SiO2+TiO2+ZrO2)；
9wt％-19wt％Bi2O3；
0wt％-28wt％(Nd2O3+Gd2O3+La2O3+Sm2O3)；
1wt％-5wt％ZnO；
0.1wt％-3wt％CuO；和
0.5wt％-3wt％LiF。
5.一种无铅和无镉的电介质糊组合物，其在煅烧之前包含固体部分，该固体部分包含：
15wt％-30wt％BaO；
40wt％-57wt％TiO2；
8wt％-18wt％Bi2O3；
0.1wt％-5wt％SiO2；
0.1wt％-5wt％ZnO；
0.1wt％-5wt％B2O3；
0.1wt％-5wt％CuO；和
0.1wt％-5wt％LiF。
6.一种无铅和无镉的电介质糊组合物，其在煅烧之前包含固体部分，该固体部分包含：
12wt％-18wt％BaO；
0.1wt％-5wt％CaO；
0.1wt％-7wt％ZnO；
0.1wt％-5wt％B2O3；
30wt％-40wt％TiO2；
8wt％-16wt％Bi2O3；
0wt％-3wt％CuO；和
0.1wt％-3wt％LiF。
7.根据权利要求1-6任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物，其包含：
60wt％-90wt％的固体部分和
进一步包含10wt％-40wt％的有机部分。
8.根据权利要求1-6任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物，其进一步包含选自由下面的物质组成的组的至少一种：堇青石、氧化铝、锆石、熔融石英、铝硅酸盐及其组合。
9.根据权利要求1-6任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物，其中在煅烧后，该煅烧的组合物表现出的Q值是至少500。
10.一种煅烧的电或者电子元件，其在煅烧之前，包含权利要求1-9任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物，以及导电糊，该导电糊在煅烧之前包含：
a.60-90wt％的Ag+Pd+Pt+Au，
b.1-10wt％的选自由过渡金属的硅化物、碳化物、氮化物和硼化物组成的组的添加剂，
c.0.5-10wt％的至少一种玻璃料，
d.10-40wt％的有机部分。
11.根据权利要求10所述的电或者电子元件，其中该电或者电子元件选自由高Q谐振器、通带滤波器、无线包装系统及其组合组成的组。
12.一种形成电子元件的方法，其包含：
(a)将权利要求1-9任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物施用到基底上，或者
(b)将包含权利要求1-9任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物的带子施用到基底上，或者
(c)将权利要求1-9任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物的多个粒子压实，来形成单片复合基底；和
(d)将该基底在足够的温度煅烧，来烧结电介质材料。
13.根据权利要求12所述的方法，其中该煅烧是在800℃-900℃的温度进行的。
14.根据权利要求13所述的方法，其中该煅烧是在825℃-875℃的温度进行的。
15.根据权利要求12-14任一项所述的方法，其中煅烧的电介质材料表现出的介电常数是10-100。
16.根据权利要求15所述的方法，其中该煅烧的电介质材料表现出的介电常数是20-80。
17.根据权利要求12-14任一项所述的方法，其进一步包含在煅烧之前，将带子层合到电介质糊上，该带子在煅烧之前包含固体部分，该固体部分包含：5-25wt％BaO、1-10wt％CaO、2-13wt％B2O3、30-55wt％Al2O3、15-40wt％SiO2和0.01-13wt％TiO2。
18.一种共煅烧至少一层根据权利要求1-9任一项所述的无铅和无镉的电介质组合物或者电介质糊组合物和与其相组合的介电常数小于10的带子或者糊的至少一种交替的单独的层，来形成多层基底的方法，其中交替的层具有不同的介电常数。
19.根据权利要求18所述的方法，其中该煅烧是在800℃-900℃的温度进行的。
20.根据权利要求19所述的方法，其中该煅烧是在825℃-875℃的温度进行的。
21.根据权利要求18-20任一项所述的方法，其进一步包含在煅烧之前，将带子层合到电介质糊上，该带子在煅烧之前包含固体部分，该固体部分包含：5-25wt％BaO、1-10wt％CaO、2-13wt％B2O3、30-55wt％Al2O3、15-40wt％SiO2和0.01-13wt％TiO2。
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| CN107848872B (zh) | 2015-08-05 | 2020-11-06 | 费罗公司 | 高介电常数ltcc介电组合物和装置 |
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| EP3166905A1 (en) | 2017-05-17 |
| KR20170020436A (ko) | 2017-02-22 |
| WO2016007255A1 (en) | 2016-01-14 |
| KR101931108B1 (ko) | 2018-12-20 |
| EP3166905A4 (en) | 2018-04-11 |
| TW201634425A (zh) | 2016-10-01 |
| CN106536448A (zh) | 2017-03-22 |
| US20170110246A1 (en) | 2017-04-20 |
| EP3166905B1 (en) | 2020-09-02 |
| US9892853B2 (en) | 2018-02-13 |
| TWI594971B (zh) | 2017-08-11 |
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