CN106489205A - 具有柔性衬底的光电装置 - Google Patents

具有柔性衬底的光电装置 Download PDF

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CN106489205A
CN106489205A CN201480067759.XA CN201480067759A CN106489205A CN 106489205 A CN106489205 A CN 106489205A CN 201480067759 A CN201480067759 A CN 201480067759A CN 106489205 A CN106489205 A CN 106489205A
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A·J·库图尔
N·R·孔克尔
A·M·施米茨
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Abstract

公开了一种光电装置(40)。光电装置包括柔性衬底(34),设置在柔性衬底的第一表面上的薄膜晶体管(TFT)阵列(42),设置在TFT阵列上的光电二极管层(44),以及连接至TFT阵列并且设置在柔性衬底的第一表面上的多个数据线(52)和扫描线(54)。装置进一步包括设置在柔性衬底的与TFT阵列相反的第二表面上的电子设备信号模块组合件(30,32),以及穿过柔性衬底设置、将数据线和扫描线连接至电子设备信号模块组合件的互连(58)。

Description

具有柔性衬底的光电装置
背景技术
便携式x射线检测器是在医疗和工业市场中快速增长的市场。数字x射线(DXR)检测器通常制造在厚玻璃衬底上。结果,当前的便携式产品具有有限的坚固性(ruggedness)规范,包括最大30cm落差。玻璃衬底要求显著的封装厚度和重量以保护脆弱的玻璃衬底破裂。可以要求权衡以针对检测器重量和厚度平衡检测器坚固性。
因此,对于高度便携、前线部署的数字x射线检测器而言关键的限制是玻璃衬底。诸如电子阅读器和电子书的显示器技术为轻重量和坚固衬底提供了机遇。对于有源矩阵显示器的许多需求与对于数字x射线检测器的需求重叠。结果,柔性显示器可能集成至坚固数字x射线检测器中。柔性、不可破裂、薄的衬底将实现薄的、坚固的、轻重量的x射线检测器以及先前不可能的新的处理能力。
发明内容
本发明通过提供一种光电装置而满足这些和其他需求,该光电装置包括柔性衬底,其具有穿透衬底并且允许至衬底背面的电连接的电互连。
因此,在一个方面中,本发明涉及一种光电装置。光电装置包括柔性衬底,设置在柔性衬底的第一表面上的薄膜晶体管(TFT)阵列,设置在TFT阵列上的光电二极管层,以及连接至TFT阵列并且设置在柔性衬底的第一表面上的多个数据线和扫描线。装置进一步包括设置在柔性衬底的与TFT阵列相反的第二表面上的电子设备信号模块,以及穿过柔性衬底而设置、将数据线和扫描线连接至电子设备信号模块组合件的互连。
附图说明
图1是现有技术的光电装置的示意表示;
图2是根据本发明一个实施例的具有柔性衬底的光电装置的示意表示;以及
图3是根据本发明一个实施例的TFT阵列、数据线、扫描线和通孔的顶视图。
具体实施方式
在下面说明书中,相似参考字符遍及附图示出若干视图中指示相似或对应的部分。也应该理解的是,诸如“顶部”、“在……上方”、“在……之上”、“在……上”等的术语是方便性词汇并且不应构造为限定性术语。
本发明的一个方面提供了一种便携式光电装置,例如,但不限于发光制造(LED),有机发光制造(OLED),光伏制造,光成像器,光发射器以及x射线检测器。
通常现有的电-光(备选地光电)装置10如图1中所示。装置包括衬底14上的有源区域(阵列)12。通常,在诸如光学成像器的通用光学装置中衬底14主要由玻璃制成。玻璃衬底14通常具有机械支承16,使得最小化由玻璃衬底经受的负载和冲击。装置10可以进一步具有反向散射屏蔽18以最小化光波至周围环境的散射。装置10的电子设备20通常组装在衬底14的背面处,优选地反向散射屏蔽18的背面,以便最大化在衬底14正面中的有源区域12。
在具有玻璃衬底14的装置中,通过柔性互连(备选地TAB接合)20形成从有源区域12至电子设备20的电连接。柔性互连22接合至衬底14正面中的有源阵列12,并且卷绕衬底14的边缘、衬底支承16以及反向散射屏蔽18以连接至包括在背面上的数据模块组合件30和扫描模块组合件32的电子设备信号模块组合件,并且进一步连接至电子设备20模块。采用装置外侧盖(外壳)24覆盖有源区域12、衬底14、以及电子设备20。在顶部、侧面和底部上在装置外壳24内添加支承和冲击吸收材料26以保护衬底14玻璃免于破裂。
在外侧外壳24的外部与有源区域12之间的距离“d”是对于许多成像应用指示了有源区域的有用效用的重要参数。可以由最小“d”辅助可用的有源区域12的最大化。采用玻璃衬底14,由柔性互连22以及面板支承26增大距离d。也由支承结构26和面板支承16增大装置的厚度“t”。采用柔性衬底替换玻璃衬底14将减小对于面板支承16以及支承结构和冲击吸收材料的需要。
在本发明的一个实施例中,光电装置40如图2中所示地那样公开。光电装置40具有设置在柔性衬底34上的有源区域12。如本文所使用的,“柔性衬底”是能够弯曲至等于或小于约1厘米半径的衬底,无需影响衬底34的性能的任何裂痕或材料层离。
合适的柔性衬底34包括诸如薄塑料片、复合塑料片和金属箔的柔性片。在一个特定实施例中,柔性衬底包括聚碳酸酯。用于柔性衬底的合适的材料的示例是柔性玻璃,聚合物,包括聚酯,诸如聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚对萘二甲酸乙二醇酯、聚苯乙烯、聚碳酸酯、聚甲基丙烯酸甲酯、聚醚砜、聚烯丙酯、聚酰亚胺、聚环烯烃、降冰片烯树脂以及含氟聚合物,金属箔,诸如不锈钢、铝、银和金,金属氧化物,诸如氧化钛和氧化锌,以及诸如硅的半导体。衬底材料可以包括复合材料,诸如纤维增强塑料或碳复合物。也可以使用材料的组合。通过使用不可破裂的材料取代脆弱玻璃衬底用于x射线检测器,能够减小或消除设计成吸收弯曲应力或跌落冲击的组件和材料的大小和重量,并且能够减小检测器的总重量和厚度。
在一个实施例中,采用装置外侧外壳24覆盖有源区域12、衬底14以及电子设备20。在备选实施例中,电子设备20可以设置在外壳外部。因为柔性衬底由冲击弹回性材料制成,对于在上部外壳24和有源区域12之间、在电子设备组合件20和下部外壳24之间以及在侧面中衬底34和外壳24之间的衬底34无需附加的机械支承。可以存在如图2中所示地那样设置在柔性支承34的背面处的任选的反向散射屏蔽18。在一个实施例中,在柔性衬底34的背面上的数据模块组合件30和扫描模块组合件32设置在外壳24内并且连接至电子设备20模块。在另外实施例中,数据模块组合件30和/或扫描模块组合件32可以通过柔性模块与电子设备20模块连接。
在一个实施例中,光电装置40的有源区域12包括薄膜晶体管(TFT)阵列42和光电二极管层44。在一个实施例中,TFT阵列42设置在柔性衬底34的第一表面上并且光电二极管层44设置在TFT阵列42上。TFT阵列42可以包括以特定顺序布置在衬底34的第一表面上的多个薄膜晶体管。TFT阵列的薄膜晶体管可以以并排方式布置或者可以布置有个别薄膜晶体管之间的间隙。
光电二极管层可以包括一批光电二极管,或者可以是具有以层形式布置的多个个别光电二极管。光电二极管层44可以包括有机光电二极管或无机光电二极管。取决于应用和设计变化,光电二极管层44可以是单个层或者可以包括多个层。此外,光电二极管层44可以直接地设置在TFT阵列42上,或者设计可以包括设置在光电二极管层44与TFT阵列42之间的一个或多个层。在一个实施例中,多个光电二极管布置在TFT阵列42上的光电二极管层44中。在一个实施例中,TFT阵列42电连接至光电二极管层44。
取决于光电装置40的功能,可以存在附加的层作为有源区域12的一部分。例如,在一个实施例中,光学装置是光成像器。在一个实施例中,光成像器是具有闪烁体材料的x射线检测器。在该实施例中,闪烁体材料46可以设置在光电二极管层42上。
在一个特定实施例中,光电装置40是便携式x射线检测器并且包括由撞击x射线激励并且产生可见光的闪烁体层46。闪烁体层46可以是单片闪烁体或像素化闪烁体阵列。GOS(Gd2O2S)是通常使用的低成本闪烁体,其采取具有毫米范围厚度的薄膜的形式。碘化铯(CsI)是能够用于高灵敏度闪烁体的另一闪烁体材料,并且可以由热蒸发而沉积。可以使用的另一闪烁体是PIB(粘合剂中颗粒)闪烁体,其中闪烁颗粒可以包括在粘合剂矩阵材料中并且平坦化在衬底上。由闪烁体生成的可见光照射设置在TFT阵列42上的光电二极管层44。
撞击在光电二极管层44上的可见光将光电二极管层44的二极管的电容部分地放电。光电二极管放电量正比于入射光的量。TFT阵列42的每个像素包括用于控制电荷何时恢复至光电二极管电容的开关场效应晶体管(FET)。恢复电容所要求的电荷由外部电荷测量电路系统提供并测量。与TFT阵列42耦合的该电路系统允许依次扫描并读出阵列44中所有光电二极管。定制的A/D积分器/转换器通常用于测量将光电二极管恢复至其初始未放电状态所要求的电荷。放电的幅度正比于在x射线曝露长度期间由闪烁体层46和光电二极管层44集成的每个像素处的入射x射线剂量。使用光电二极管层44放电水平逐个像素地重构最终的x射线图像以设置图像像素强度。
为了由外部电路系统提供并测量恢复光电二极管的电容所要求的电荷,多个数据线52和扫描线54可以连接至TFT阵列42并且设置在柔性衬底的第一表面上,如图3中所描绘在TFT阵列42的顶视图中所示(未示出TFT阵列42顶部上的任何其他有源层)。数据线52和扫描线54可以连接至TFT阵列42的每个晶体管。因此,取决于TFT阵列中晶体管的数目,在柔性衬底34的第一表面上可以存在数百个数据线52和扫描线54。在一个实施例中,存在的数据线52的数目大于1000。在一个实施例中,存在的扫描线54的数目大于1000。
数据线52和扫描线54需要分别连接至数据模块组合件30和扫描模块组合件32(图2)。在一个实施例中,电子信号模块(未示出)包括数据模块组合件30和扫描模块组合件32,并且设置在柔性衬底34的背面(第二表面)中。在一个实施例中,数据模块组合件30设置在柔性衬底34的第一表面上,并且扫描模块组件32设置在柔性衬底34的背面中。在备选实施例中,扫描模块组合件32设置在柔性衬底34的第一表面上,以及数据模块组合件30设置在柔性衬底34的背面中。在一个实施例中,数据模块组合件30和扫描模块组合件32通过柔性接合分别连接至数据线52和扫描线54。考虑到本光学装置40的适应柔性衬底34,通孔56(图2和图3)可以穿过衬底34连接第一表面和第二表面而形成。数据线52可以通过穿过通孔56而连接至数据模块组合件30而无需围绕衬底34的边缘行走。类似地,扫描线54可以通过传统通孔56连接至扫描模块组合件32而无需围绕衬底34的边缘行走。
取决于需求可以存在设置于衬底34上的多个通孔56。用于将数据信息(包括数据信号)传输至数据模块组合件30和将扫描信息(包括扫描信号)传输至扫描模块组合件32的通孔56可以相同或不同。例如,一组通孔56可以排他地用于将数据线52信息传输至数据模块组合件30,以及另一组通孔56可以用于传输扫描线54信息至扫描模块组合件32。互连58(图2)可以穿过通孔56用于将数据线52与数据模块组合件30连接以及通过标签翼片粘合垫(tab bond pad)36而将扫描线54与扫描模块组合件32连接。用于将数据信息传输至数据模块组合件30的互连58可以不同于用于将扫描信息传输至扫描模块组合件32的互连58。在一个实施例中,数据模块组合件30和/或扫描模块组合件32可以通过柔性模块与互连58连接。
柔性衬底34上的通孔56可以设置在衬底34上任意位置。在一个实施例中,通孔56靠近柔性衬底34的边缘部分,并且因此,互连58设置靠近衬底的边缘部分,远离有源区域12。在备选实施例中,通孔56和互连58设置在柔性衬底34的其中设置TFT阵列42的阵列部分(未示出)中。
在具有柔性衬底34的光电装置40的一个实施例中,在垂直于通孔56(并且平行于衬底34第一表面和第二表面)的方向的外壳24与柔性衬底34之间间距小于约0.5mm。在一个实施例中,外壳24的外侧部分与有源区域12之间的距离d小于约5毫米。
本书面描述使用包括最佳模式的示例来公开本发明,并且使本领域的技术人员能够实施本发明,包括制作和使用任何装置或系统,以及执行任何合并方法。本发明的可取得专利范围由权利要求书来定义,并且可包括本领域的技术人员想到的其他示例。如果这类其他示例具有与权利要求的文字语言完全相同的结构单元,或者如果它们包括具有与权利要求的文字语言的非实质差异的等效结构单元,则预计它们处于权利要求的范围之内。

Claims (14)

1.一种光电装置,包括:
薄膜晶体管(TFT)阵列,设置在柔性衬底的第一表面上;
光电二极管层,设置在所述TFT阵列上;
多个数据线和扫描线,连接至所述TFT阵列并且设置在所述柔性衬底的所述第一表面上;
电子设备信号模块组合件,设置在所述柔性衬底的与所述TFT阵列相反的第二表面上;以及
穿过所述柔性衬底,将所述数据线和扫描线连接至所述电子设备信号模块组合件的互连。
2.根据权利要求1所述的装置,其中,所述电子设备信号模块组合件包括数据扫描模块组合件和扫描模块组合件。
3.根据权利要求1所述的装置,其中,所述TFT阵列包括多个晶体管并且所述TFT阵列的每个晶体管连接至所述电子设备信号模块组合件。
4.根据权利要求1所述的装置,其中,所述光电二极管层包括多个光电二极管。
5.根据权利要求1所述的装置,其中,所述TFT阵列电连接至所述光电二极管层。
6.根据权利要求1所述的装置,其中,所述多个数据线包括大于约100个数据线。
7.根据权利要求1所述的装置,其中,所述多个数据线包括大于约100个扫描线。
8.根据权利要求1所述的装置,其中,所述互连设置靠近所述柔性衬底的边缘部分。
9.根据权利要求1所述的装置,其中,所述互连设置在所述柔性衬底的所述阵列部分中。
10.根据权利要求1所述的装置,进一步包括设置在所述光电二极管层上的闪烁体材料。
11.根据权利要求9所述的装置,其中,所述柔性衬底、闪烁体、TFT阵列、光电二极管层、多个数据线以及多个扫描线设置在外壳内。
12.根据权利要求11所述的装置,其中,所述电子设备信号模块组合件设置在外壳内。
13.根据权利要求10所述的装置,其中,在所述外壳和所述柔性衬底之间的间距小于约0.5mm。
14.根据权利要求1所述的装置,其中,所述装置是便携式X射线检测器。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108107060A (zh) * 2017-11-30 2018-06-01 上海奕瑞光电子科技股份有限公司 基于柔性薄膜封装的平板探测器及其制备方法
CN114038866A (zh) * 2021-10-12 2022-02-11 上海奕瑞光电子科技股份有限公司 柔性折叠x射线探测器及其制备方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10712454B2 (en) * 2014-07-25 2020-07-14 General Electric Company X-ray detectors supported on a substrate having a metal barrier
US9513380B2 (en) * 2014-07-25 2016-12-06 General Electric Company X-ray detectors supported on a substrate having a surrounding metal barrier
US9535173B2 (en) * 2014-09-11 2017-01-03 General Electric Company Organic x-ray detector and x-ray systems
WO2017099784A1 (en) * 2015-12-10 2017-06-15 Intel Corporation Flexible computing device that includes a plurality of displays
JP2017203672A (ja) * 2016-05-11 2017-11-16 東芝電子管デバイス株式会社 放射線検出器
WO2017218898A2 (en) * 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Electronic devices and related methods
EP3495849A1 (en) * 2017-12-11 2019-06-12 Koninklijke Philips N.V. Multilayer pixelated scintillator with enlarged fill factor
US20190353805A1 (en) * 2018-05-21 2019-11-21 General Electric Company Digital x-ray detector having polymeric substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030031296A1 (en) * 2001-07-27 2003-02-13 Martin Hoheisel X-ray diagnostics installation with a flexible solid state X-ray detector
CN101842901A (zh) * 2007-11-05 2010-09-22 佳能株式会社 放射线检测装置的制造方法、放射线检测装置和放射线成像系统
EP2328177A2 (en) * 2009-11-27 2011-06-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
CN102460216A (zh) * 2009-06-05 2012-05-16 佳能株式会社 放射线摄像设备

Family Cites Families (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2520065C2 (de) 1975-05-06 1977-03-03 Seifert & Co Rich Vorrichtung zur vollautomatischen radiografischen rohrpruefung
US5614720A (en) 1990-06-22 1997-03-25 Integrated Diagnostic Measurement Corporation Mobile, multi-mode apparatus and method for nondestructively inspecting components of an operating system
JPH05110048A (ja) * 1991-10-14 1993-04-30 Mitsubishi Electric Corp 光−電子集積回路
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5319206A (en) 1992-12-16 1994-06-07 E. I. Du Pont De Nemours And Company Method and apparatus for acquiring an X-ray image using a solid state device
IL109143A (en) 1993-04-05 1999-03-12 Cardiac Mariners Inc X-rays as a low-dose scanning detector by a digital X-ray imaging system
US5399884A (en) 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5381014B1 (en) 1993-12-29 1997-06-10 Du Pont Large area x-ray imager and method of fabrication
GB9505305D0 (en) 1995-03-16 1995-05-03 Philips Electronics Uk Ltd Electronic devices comprising an array
US6205199B1 (en) 1995-06-23 2001-03-20 Science Applications International Corporation Pixel-correlated, digital X-ray imaging system
GB2317742A (en) 1996-09-30 1998-04-01 Sharp Kk Imaging device
EP0908743B1 (de) 1997-10-01 2006-07-05 Siemens Aktiengesellschaft Röntgendetektor
CA2319536A1 (en) 1998-02-02 1999-08-05 Uniax Corporation Organic diodes with switchable photosensitivity
US6483099B1 (en) 1998-08-14 2002-11-19 Dupont Displays, Inc. Organic diodes with switchable photosensitivity
KR100463337B1 (ko) 1998-09-16 2005-06-08 엘지.필립스 엘시디 주식회사 엑스레이영상감지소자및그제조방법
US6493048B1 (en) 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
US8120683B1 (en) 1999-04-08 2012-02-21 Nova R & D, Inc. High resoultion digital imaging apparatus
US6900442B2 (en) 1999-07-26 2005-05-31 Edge Medical Devices Ltd. Hybrid detector for X-ray imaging
WO2001051952A1 (fr) * 2000-01-13 2001-07-19 Hamamatsu Photonics K.K. Capteur d'image radiologique et panneau de scintillateurs
US6465824B1 (en) * 2000-03-09 2002-10-15 General Electric Company Imager structure
US6341153B1 (en) 2000-10-27 2002-01-22 Genesis Engineering Company System and method for portable nondestructive examination with realtime three-dimensional tomography
US6426991B1 (en) 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
US6717150B2 (en) 2000-12-12 2004-04-06 Ge Medical Systems Global Technology Company, Llc Solid-state CT detector modules with improved scintillator/diode coupling
US6753873B2 (en) 2001-01-31 2004-06-22 General Electric Company Shared memory control between detector framing node and processor
US6970586B2 (en) 2001-01-31 2005-11-29 General Electric Company Detector framing node architecture to communicate image data
US6904124B2 (en) 2001-01-31 2005-06-07 General Electric Company Indirect programming of detector framing node
US6901159B2 (en) 2001-01-31 2005-05-31 General Electric Company Communication of image data from image detector to host computer
US6940142B2 (en) 2001-07-02 2005-09-06 Xerox Corporation Low data line capacitance image sensor array using air-gap metal crossover
US6784433B2 (en) 2001-07-16 2004-08-31 Edge Medical Devices Ltd. High resolution detector for X-ray imaging
EP1316818A3 (en) 2001-12-03 2012-04-11 Hitachi, Ltd. Radiological imaging apparatus
US7053381B2 (en) 2001-12-06 2006-05-30 General Electric Company Dual para-xylylene layers for an X-ray detector
US6707046B2 (en) 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
US7122804B2 (en) 2002-02-15 2006-10-17 Varian Medical Systems Technologies, Inc. X-ray imaging device
US6740884B2 (en) 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
US6879657B2 (en) 2002-05-10 2005-04-12 Ge Medical Systems Global Technology, Llc Computed tomography system with integrated scatter detectors
US6718010B2 (en) 2002-06-11 2004-04-06 Ge Medical Systems Global Technology Company, Llc Method and apparatus for acquiring a series of images utilizing a solid state detector with alternating scan lines
US6784434B2 (en) 2002-06-25 2004-08-31 General Electric Company Imaging array and method for manufacturing same
US6841784B2 (en) 2002-07-02 2005-01-11 Ray Therapy Imaging Ab Radiation sensor device
TW540128B (en) 2002-07-12 2003-07-01 Hannstar Display Corp Manufacturing method of X-ray detector array
US7078702B2 (en) 2002-07-25 2006-07-18 General Electric Company Imager
US20040229051A1 (en) 2003-05-15 2004-11-18 General Electric Company Multilayer coating package on flexible substrates for electro-optical devices
DE10244176A1 (de) 2002-09-23 2004-04-08 Siemens Ag Bilddetektor für Röntgenstrahlung
DE10244178A1 (de) 2002-09-23 2004-04-08 Siemens Ag Röntgendetektor aus einem Szintillator mit Fotosensorbeschichtung und Herstellungsverfahren
DE10244177A1 (de) * 2002-09-23 2004-04-08 Siemens Ag Bilddetektor für Röntgeneinrichtungen mit rückseitig kontaktierten, organischen Bild-Sensoren
JP2004134933A (ja) 2002-10-09 2004-04-30 Konica Minolta Holdings Inc デジタルスチルカメラ及びその作製方法
KR100956338B1 (ko) 2002-12-11 2010-05-06 삼성전자주식회사 X-ray 검출기용 박막 트랜지스터 어레이 기판
CN100374878C (zh) 2003-01-06 2008-03-12 皇家飞利浦电子股份有限公司 辐射探测器模块和辐射探测方法,计算机断层摄影扫描器
JP4133429B2 (ja) 2003-02-24 2008-08-13 浜松ホトニクス株式会社 半導体装置
US7037599B2 (en) 2003-02-28 2006-05-02 Eastman Kodak Company Organic light emitting diodes for production of polarized light
JP4289913B2 (ja) 2003-03-12 2009-07-01 キヤノン株式会社 放射線検出装置及びその製造方法
US7437789B2 (en) 2003-04-25 2008-10-21 Thompson Harlyn J Lumbar back support device
US6982424B2 (en) 2003-06-02 2006-01-03 Ge Medical Systems Global Technology Company, Llc X-ray and CT image detector
US7366280B2 (en) 2003-06-19 2008-04-29 General Electric Company Integrated arc anode x-ray source for a computed tomography system
US7272254B2 (en) 2003-07-09 2007-09-18 General Electric Company System and method for analyzing and identifying flaws in a manufactured part
DE102004001688B4 (de) 2004-01-12 2010-01-07 Siemens Ag Detektormodul
US7235790B2 (en) 2004-02-17 2007-06-26 Ge Medical Systems Global Technology Company, Llc Methods and apparatus for radiation detection
FR2869318B1 (fr) 2004-04-21 2006-06-09 Commissariat Energie Atomique Composes mono-,oligo et polymeres pi -conjugues, et cellules photovoltaiques les contenant
US7067841B2 (en) 2004-04-22 2006-06-27 E. I. Du Pont De Nemours And Company Organic electronic devices
DE102004026842B4 (de) 2004-06-02 2007-12-27 Siemens Ag Röntgendetektor
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7352840B1 (en) 2004-06-21 2008-04-01 Radiation Monitoring Devices, Inc. Micro CT scanners incorporating internal gain charge-coupled devices
JP2006025832A (ja) 2004-07-12 2006-02-02 Konica Minolta Medical & Graphic Inc 放射線画像撮影システム及び放射線画像撮影方法
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
JP4299806B2 (ja) 2005-05-11 2009-07-22 ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー X線ct装置
US20060282946A1 (en) 2005-06-15 2006-12-21 Meyer Matthew E Patient transfer device
DE102005037289A1 (de) 2005-08-08 2007-02-22 Siemens Ag Fotodetektor, Röntgenstrahlenflachbilddetektor und Verfahren zur Herstellung dergleichen
US20070085015A1 (en) 2005-10-14 2007-04-19 Castleberry Donald E Lightweight and rugged digital x-ray detector
GB0523437D0 (en) 2005-11-17 2005-12-28 Imp College Innovations Ltd A method of patterning a thin film
DE102005055278B4 (de) 2005-11-17 2010-12-02 Siemens Ag Organischer pixelierter Flachdetektor mit erhöhter Empfindlichkeit
EP1788629A1 (en) 2005-11-21 2007-05-23 Paul Scherrer Institut A readout chip for single photon counting
US7560702B2 (en) 2005-11-28 2009-07-14 General Electric Company Interconnect and packaging method for multi-slice CT detector modules
US8477125B2 (en) 2005-12-21 2013-07-02 Samsung Display Co., Ltd. Photo sensor and organic light-emitting display using the same
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100782458B1 (ko) 2006-03-27 2007-12-05 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
JP4908935B2 (ja) * 2006-06-09 2012-04-04 キヤノン株式会社 光電変換装置及び撮像システム
US20080078940A1 (en) * 2006-10-03 2008-04-03 General Electric Company Portable imaging device having shock absorbent assembly
US20080135891A1 (en) * 2006-12-08 2008-06-12 Palo Alto Research Center, Incorporated Transistor Device Formed on a Flexible Substrate Including Anodized Gate Dielectric
US20080149652A1 (en) 2006-12-26 2008-06-26 Ming-Chi Chang Handle enclosing assembly of toolbox
US7606346B2 (en) 2007-01-04 2009-10-20 General Electric Company CT detector module construction
GB2450675A (en) 2007-04-04 2009-01-07 Cambridge Display Tech Ltd Active matrix organic displays
CA2682928A1 (en) 2007-04-19 2008-10-30 Basf Se Method for forming a pattern on a substrate and electronic device formed thereby
EP1985998A1 (en) 2007-04-26 2008-10-29 Hitachi-GE Nuclear Energy, Ltd. Method for inspecting pipes, and radiographic non-destructive inspection apparatus
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
KR101352359B1 (ko) 2007-07-23 2014-01-23 삼성디스플레이 주식회사 엑스선 검출기 및 그 제조 방법
JP5235348B2 (ja) 2007-07-26 2013-07-10 富士フイルム株式会社 放射線撮像素子
US20120068076A1 (en) 2007-10-30 2012-03-22 Farhad Daghighian Portable pet scanner for imaging of a portion of the body
JP4764407B2 (ja) 2007-11-20 2011-09-07 東芝電子管デバイス株式会社 放射線検出器及びその製造方法
US7897929B2 (en) 2007-12-06 2011-03-01 General Electric Company Reduced cost pixel design for flat panel x-ray imager
GB2455747B (en) 2007-12-19 2011-02-09 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
CN101507610B (zh) 2008-02-13 2012-12-12 Ge医疗系统环球技术有限公司 检测器面板和x射线成像装置
GB2458940B (en) 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
JP5137680B2 (ja) 2008-05-08 2013-02-06 株式会社ジャパンディスプレイウェスト 液晶表示装置
JP5330779B2 (ja) * 2008-09-10 2013-10-30 三菱電機株式会社 光電変換装置、及びその製造方法
US8300125B2 (en) 2008-09-22 2012-10-30 Palo Alto Research Center Incorporated Method and apparatus for using thin-film transistors and MIS capacitors as light-sensing elements in charge mapping arrays
JP2010078415A (ja) 2008-09-25 2010-04-08 Fujifilm Corp 放射線検出装置及び放射線画像撮影システム
US8076647B2 (en) 2008-10-21 2011-12-13 Matt Danielsson X-ray detector, a corresponding x-ray imaging device and a method for improving the resolution of a scintillator-based x-ray detector
EP2180599B1 (en) 2008-10-24 2014-12-17 Advanced Silicon SA X-ray imaging readout and system
US7956332B2 (en) 2008-10-29 2011-06-07 General Electric Company Multi-layer radiation detector assembly
JP2010153449A (ja) 2008-12-24 2010-07-08 Seiko Epson Corp 光源一体型光電変換装置
JP5847075B2 (ja) 2009-04-22 2016-01-20 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. プリント有機フォトダイオードアレイを備えるイメージング測定システム
US20100305427A1 (en) 2009-06-01 2010-12-02 General Electric Company Long-range planar sensor array for use in a surgical navigation system
JP5744861B2 (ja) 2009-06-17 2015-07-08 ザ、リージェンツ、オブ、ザ、ユニバーシティー、オブ、ミシガン フラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造、並びに薄膜電子工学を利用したフラットパネルx線イメージャ内のフォトダイオード及び他のセンサ構造のトポロジー均一性の改善方法
JP5528734B2 (ja) 2009-07-09 2014-06-25 富士フイルム株式会社 電子素子及びその製造方法、表示装置、並びにセンサー
US8338788B2 (en) 2009-07-29 2012-12-25 Spectrum Dynamics Llc Method and system of optimized volumetric imaging
US8409908B2 (en) 2009-07-30 2013-04-02 General Electric Company Apparatus for reducing photodiode thermal gain coefficient and method of making same
JP2011071482A (ja) 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡
GB0915141D0 (en) 2009-08-28 2009-10-07 Shawcor Ltd Method and apparatus for external pipeline weld inspection
JP5637751B2 (ja) 2009-08-28 2014-12-10 富士フイルム株式会社 固体撮像装置,固体撮像装置の製造方法
WO2011028829A2 (en) 2009-09-04 2011-03-10 Plextronics, Inc. Organic electronic devices and polymers, including photovoltaic cells and diketone-based and diketopyrrolopyrrole-based polymers
CN102576415B (zh) 2009-09-30 2015-11-25 株式会社希福特 二维码、二维码阅读器和程序
GB0917950D0 (en) 2009-10-13 2009-11-25 Shawcor Ltd X-ray inspection method and apparatus for pipeline girth weld inspection
CN201681056U (zh) 2009-11-27 2010-12-22 北京工业大学 工业x射线底片的高分辨观测装置
CN101718912B (zh) 2009-11-27 2011-05-18 北京工业大学 放大倍率可变的工业x射线底片数字化细节观察仪
US8405832B2 (en) 2009-12-10 2013-03-26 Palo Alto Research Center Incorporated Light scattering measurement system based on flexible sensor array
JP2011146541A (ja) 2010-01-14 2011-07-28 Canon Inc X線センサおよびその製造方法
JP2011247686A (ja) 2010-05-25 2011-12-08 Fujifilm Corp 放射線画像撮影装置
KR101268425B1 (ko) 2010-06-15 2013-05-28 주식회사 레이언스 테이블형 디지털 엑스선 감지장치, 이를 위한 하우징
US8384041B2 (en) 2010-07-21 2013-02-26 Carestream Health, Inc. Digital radiographic imaging arrays with reduced noise
CN102985848B (zh) * 2010-07-26 2016-03-16 富士胶片株式会社 放射线检测面板
US8605862B2 (en) 2010-09-27 2013-12-10 General Electric Company Digital X-ray detector with increased dynamic range
CN101975787B (zh) 2010-10-21 2012-07-25 丹东奥龙射线仪器有限公司 螺旋焊管x光检测机探臂装置
US8440978B2 (en) 2010-10-22 2013-05-14 Varian Medical Systems International Ag Method and apparatus for multi-layered high efficiency mega-voltage imager
DE102010043749A1 (de) 2010-11-11 2012-05-16 Siemens Aktiengesellschaft Hybride organische Fotodiode
EP2640269A4 (en) 2010-11-16 2017-10-25 Carestream Health, Inc. Systems and methods for calibrating, correcting and processing images on a radiographic detector
KR101736321B1 (ko) 2010-12-22 2017-05-17 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 엑스레이 검출기
JP5757096B2 (ja) 2011-01-31 2015-07-29 ソニー株式会社 放射線撮像装置および放射線撮像表示システム
DE102011004936A1 (de) 2011-03-02 2012-09-06 Siemens Aktiengesellschaft Röntgendetektor und medizinisches Röntgengerät
US8892203B2 (en) 2011-04-11 2014-11-18 John R. Heinrichs Emergency response backboard with integrated scale
JP5653829B2 (ja) 2011-04-25 2015-01-14 富士フイルム株式会社 放射線撮影装置、放射線撮影システム及び放射線撮影方法
US8581254B2 (en) 2011-09-30 2013-11-12 General Electric Company Photodetector having improved quantum efficiency
JP5927873B2 (ja) 2011-12-01 2016-06-01 三菱電機株式会社 画像検出器
US8792618B2 (en) 2011-12-31 2014-07-29 Carestream Health, Inc. Radiographic detector including block address pixel architecture, imaging apparatus and methods using the same
JP2014032170A (ja) 2012-07-11 2014-02-20 Konica Minolta Inc 放射線検出パネルおよび放射線画像検出器
US9685567B2 (en) 2012-07-20 2017-06-20 Nutech Ventures Nanocomposite photodetector
CN202903698U (zh) 2012-11-19 2013-04-24 南京奥特电气股份有限公司 一种管道焊缝数字化自动探伤装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030031296A1 (en) * 2001-07-27 2003-02-13 Martin Hoheisel X-ray diagnostics installation with a flexible solid state X-ray detector
CN101842901A (zh) * 2007-11-05 2010-09-22 佳能株式会社 放射线检测装置的制造方法、放射线检测装置和放射线成像系统
CN102460216A (zh) * 2009-06-05 2012-05-16 佳能株式会社 放射线摄像设备
EP2328177A2 (en) * 2009-11-27 2011-06-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108107060A (zh) * 2017-11-30 2018-06-01 上海奕瑞光电子科技股份有限公司 基于柔性薄膜封装的平板探测器及其制备方法
CN114038866A (zh) * 2021-10-12 2022-02-11 上海奕瑞光电子科技股份有限公司 柔性折叠x射线探测器及其制备方法

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