CN106415820B - 具有覆盖至少一个半导体组件的包封物质的半导体模块 - Google Patents

具有覆盖至少一个半导体组件的包封物质的半导体模块 Download PDF

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CN106415820B
CN106415820B CN201580032384.8A CN201580032384A CN106415820B CN 106415820 B CN106415820 B CN 106415820B CN 201580032384 A CN201580032384 A CN 201580032384A CN 106415820 B CN106415820 B CN 106415820B
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semiconductor module
substance
semiconductor
encapsulating substance
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CN106415820A (zh
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R.艾泽勒
A-Z.米里克
F.克吕格
W.施密特
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Heraeus Deutschland GmbH and Co KG
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Abstract

具有承载至少一个半导体组件（20）的陶瓷电路载体（50）的半导体模块（10），其中所述至少一个半导体组件（20）被包封物质（30）覆盖，其特征在于，所述包封物质（30）包括硬化的无机粘合剂并且具有2至10ppm/K的范围中的热膨胀系数，并且其中陶瓷电路载体（50）的陶瓷选自如下组，所述组由基于氧化铝、氮化铝或者氮化硅的陶瓷组成。

Description

具有覆盖至少一个半导体组件的包封物质的半导体模块
技术领域
本发明涉及一种具有覆盖至少一个半导体组件（半导体）的包封物质的半导体模块。
背景技术
在衬底（陶瓷印制电路板、金属印制电路板以及有机印制电路板）上包封单个半导体和半导体部件现今优选地通过例如基于环氧树脂的、部分地具有无机填充物、如二氧化硅（SiO2）的有机物质来进行。例如US 4,529,755公开一种这样的包封物质，所述包封物质包括多功能的环氧化物化合物、苯乙烯嵌段共聚物、用于环氧化物化合物的硬化剂和无机填充物。
这些被包封的器件和部件典型地具有用于所安装的功率器件的电连接端子和冷却连接面。
对于功率电子应用来说，具有高的损耗功率的以及部分地也具有高的运行电压、即绝缘要求的器件和部件是重点。在功率电子器件和部件中，主要将具有由氧化铝、氮化铝氮化硅构成的芯的陶瓷衬底用作电路载体。
US 7,034,660 B2公开了一种无线地工作的传感器，所述传感器被嵌入到混凝土或者其它含有粘合剂的材料中，以便检测如下参数，所述参数表明建筑材料中的变化。所述传感器例如可以是适于检测氯离子的电化学传感器。
发明内容
本发明的任务是提供具有改进的包封的半导体模块、尤其功率电子部件。
该任务通过如下半导体模块（10）来解决，所述半导体模块具有：承载至少一个半导体组件（20）的陶瓷电路载体（50），所述陶瓷电路载体的陶瓷选自如下组，所述组由基于氧化铝、氮化铝或者氮化硅的陶瓷组成，其中所述至少一个半导体组件（20）被包封物质（30）覆盖，其特征在于，所述包封物质（30）包括硬化的无机粘合剂并且具有2至10ppm/K的范围中的热膨胀系数。
所述半导体模块（10）除了其特殊的包封物质（30）之外是普通半导体模块，所述普通半导体模块包括陶瓷电路载体（陶瓷衬底）（50），所述陶瓷电路载体承载一个或多个半导体组件（20）。所述一个或多个半导体组件（20）尤其是在常规运行期间由于损耗功率而形成相当多的热的、即在无包封并且未封装的情况下达到例如150至＞200℃的自毁性的温度的半导体，如所述半导体例如在功率电子部件中所应用那样；所述一个或多个半导体组件（20）尤其不是传感器或者探测器。电路载体（50）的陶瓷是选自如下组的陶瓷，所述组由基于氧化铝、氮化铝或者氮化硅的陶瓷组成。换言之，涉及具有95至100重量百分比的氧化铝、氮化铝或氮化硅份额的陶瓷。
包封物质（30）是基本上或者完全无机的、无金属的材料。所述包封物质具有2至10ppm/K的范围中的热膨胀系数。包封物质（30）包括硬化的无机粘合剂。
换言之，包封物质（30）由硬化的无机粘合剂构成或者所述包封物质除了构成基质的、硬化的无机粘合剂之外还包括一种或多种另外的组成部分。后者优选地是不导电的。
构成包封物质（30）的基质或者包封物质（30）本身的硬化的无机粘合剂具有2至10ppm/K的范围中的热膨胀系数。硬化的无机粘合剂可以通过如下方式来构成：将由无机粘结剂和无机添加物构成的粉末状的混合物与水混合成可浇注的物质，浇注如此构成的可浇注的物质，然后使所浇注的物质凝固并且干燥。
在一种实施方式中，由无机粘结剂和无机添加物构成的粉末状的混合物可以是专业人员已知的磷酸盐粘合剂、例如优选地是磷酸镁粘合剂、尤其是包含氧化镁和锆石的磷酸镁粘合剂。这种材料的示例是由Sauereisen公司以ZIRCON POTTING CEMENT NO.13销售的产品。
通过将由无机粘结剂和无机添加物构成的合适的粉末状的混合物与水混合所构成的可浇注的物质的已经提及的浇注可以借助于普通的、专业人员已知的方法来进行，例如通过施加重力或者压力的浇注。在此可能适宜的是，把要包封的构件或者要包封的部件利用半壳形状来包围并且然后以可浇注的物质来填充。在凝固以及干燥之后可以在打开半壳之后将被包封的构件或者被包封的部件取出。
浇注例如可以如下进行，即包封物质（30）被构造为专业人员已知的“圆顶封装体（glob-top）”。
但是，所述浇注也可以被执行为使得包封物质（30）部分地或者完整地包封与半导体组件（20）连接的电接触元件（40）、诸如接合线、细带和/或冲压栅（Stanzgitter）。部分地包封意味着：接触元件（40）中的一个或多个未完整地被包封和/或接触元件（40）中的一个或多个未被包封，而完整地包封意味着：所有的接触元件（40）完整地被包封。
凝固和干燥在例如30至120分钟内在20至120℃的温度范围中进行。无机粘合剂在凝固和干燥期间硬化。
如已经表明，包封物质（30）可以由硬化的无机粘合剂构成或者除了用作基质组分的、硬化的无机粘合剂之外还包括一种或多种另外的组成部分。在后者的情况下，所述一种或多种另外的组成部分可在浇注之前被添加至可浇注的物质，即在水添加之前和/或之后添加混合。所述一种或多种另外的组成部分因此可以在与水混合成可浇注的物质之前添加混合到由无机粘结剂和无机添加物构成的粉末状的混合物或者所述添加混合在水添加之后进行。但是也可能的是，在水添加之前添加混合所述组成部分的一部分并且在水添加之后添加混合剩余的部分。
除了硬化的无机粘合剂之外可能的、由包封物质（30）包括的组成部分的示例是：关于包封物质（30）的体积的例如占25至90体积百分比的总体积份额的氮化铝颗粒、氮化硼颗粒、氧化铝颗粒和/或氮化硅颗粒。在包封物质（30）中存在这种颗粒对其导热能力起有益的作用。合适的氮化铝颗粒的示例是这种具有通过激光衍射确定的0.8至11μm的范围内的平均颗粒大小（d50）的氮化铝颗粒，如所述氮化铝颗粒例如由Fa.H.C.Starck在商业上销售的那样。
除了硬化的无机粘合剂之外可能的、由包封物质（30）包括的组成部分的另外的示例是纤维，即包封物质（30）可以包括一种或多种不同类型的纤维。纤维的份额例如可以在直至20体积百分比的范围中、例如在10至20体积百分比的范围中。针对可用的纤维的示例是无机纤维、如玻璃纤维、玄武岩纤维、硼纤维和陶瓷纤维、例如碳化硅纤维和氧化铝纤维，但是也是高熔点的有机纤维、诸如芳族聚酰胺纤维。这种纤维存在于包封物质（30）中对包封物质的拉应力强度和温度变化抗性起有益的作用。
在一种实施方式中，所有与包封物质（30）接触的表面不被涂层，而是配备增附性的敷层（底漆层）、例如配备由聚丙烯酸酯分散剂例如通过喷射涂覆所施加的敷层。
包封物质（30）可以具有残余空隙，因此在一种实施方式中可以设置耐湿的敷层。毛细管例如可以通过低粘性的保护物质来填充，所述保护物质持久地密封所述毛细管。尤其硅酸钙或者硅酸锂的水溶液适用于此。但是也可以利用保护层来覆盖包封物质（30）的外表面，所述保护层不被湿气渗透或者仅仅少量地被湿气渗透。为此例如可以使用基于可硬化的环氧树脂的涂层剂。
包封物质（30）的物质接合能力能够实现有损耗功率的半导体（20）经由包封物质（30）到冷却体（80）的优选的导热。这不仅可以是单侧的，而且可以从半导体（20）出发是双侧的。因此，包封物质（30）优选地是如下热桥，所述热桥建立到一个或多个尤其金属的例如由铝或铜构成的冷却体（80）的热路径。
散热通过包封物质（30）向被包封的部件的外表面、例如向所述冷却体（80）进行和/或通过热辐射进行。可能对散热有益的是，包封物质（30）和所述一个或多个冷却体（80）、半导体（20）和陶瓷电路载体（50）之间的物质连接包括化学化合。因此，可以通过在一侧衬底连接的冷却以及与包封物质（30）连接的冷却来引起热的多侧散发。
附图说明
根据在附图中所示出的特别优选地构造的实施例来进一步解释本发明。其中：
图1示出根据第一实施例的根据本发明设计的半导体模块（10）的示意性构造，在所述实施例中包封物质（30）被构造为圆顶封装体；
图2示出根据第二实施例的半导体模块（10）的示意性构造，所述第二实施例除了机电接触引线之外完全被包封物质（30）包封；
图3示出根据第三实施例的半导体模块（10）的示意性构造，所述半导体模块具有被布置在半导体（20）的两侧的用于空气冷却的冷却体（80a、80b）；
图4示出根据第四实施例的半导体模块（10）的示意性构造，所述半导体模块具有被布置在所述半导体（20）两侧的用于水冷却的冷却体（80a、80b）；以及
图5示出根据第五实施例的半导体模块（10）的示意性构造，所述半导体模块具有被布置在半导体（20）的一侧上的用于空气冷却的的冷却体（80c）以及被布置在半导体（20）的另一侧上的用于水冷却的冷却体（80b）。
具体实施方式
图1示出优选地被构造为功率电子部件的具有半导体组件（20）的半导体模块（10），所述半导体组件利用包封物质（30）来覆盖。优选地，接触半导体组件（20）的接合线（40）也利用包封物质（30）至少部分地、但是特别优选地完全地被覆盖或者包封。
半导体组件（20）在此如已知的那样被固定在陶瓷电路载体（50）上，所述陶瓷电路载体又被施加在热扩展板（70）的上侧上，所述热扩展板的下侧与冷却体（80）连接。除此之外，半导体模块（10）具有框（60）作为被向外引导的电接触部的载体。
在该第一实施例中，包封物质（30）仅仅被构造为覆盖/包封半导体组件（20）及其接合线（40）的滴状物（“圆顶封装体”）。半导体模块（10）的“圆顶封装体”和另外的表面区域在此被隔离物质（90）、例如硅树脂凝胶覆盖。
图2示出根据第二实施例利用无框式构造来构建的半导体模块（10），所述半导体模块除了电接触面和热接触面之外完全利用包封物质（30）来包封。
该设计方案尤其适于作为在以下图中所示出的实施例的出发点。
图3示出具有在两侧设置的空气冷却装置的功率部件，其中上部的冷却体（80a）与由包封物质（30）构成的在物质上接触冷却体（80a）的热桥连接，并且下部的冷却体（80b）通过物质连接被连接至陶瓷电路载体（50）。
所示出的冷却体结构分别是一体的并且配备冷却片或者冷却销，以便空气穿透尽可能涡流地进行。
图4示出具有对应于在图3中示出的设计方案的两侧的水冷却装置的功率部件，其中在图4中所示出的冷却体结构被构造为一体的并且配备内部的水引导通道，以便水穿透可以尽可能在封闭的结构中以小的密封长度来进行。
最后，图5示出具有两侧的冷却装置的功率部件，其中下部的冷却体（80b）又被构造为一体的，但是上部的冷却体（80c）被构造为多部分的。作为上部的冷却体（80c）示出的冷却体结构例如由多个在半导体模块（10）的上侧上延伸的冷却板组成或者由多个在半导体模块（10）的表面上分布的冷却销组成。
根据本发明的半导体模块（10）具有在多个方面改进的包封物质（30）。尤其应提到的是与陶瓷电路载体协调的热膨胀系数，这在避免不期望的现象、如分层（例如由于热剪切应力）以及在破坏未包封的接触元件（例如接合线的剪断）方面起有益的作用。包封物质（30）的另一优点是其比较良好的导热能力，所述导热能力作为在常规运行期间从半导体模块（10）或者至少一个半导体组件（20）上的良好的热量导出的基础。在与包封物质（30）接触的表面上的附着也是良好的。最终结果是，所提到的优点也意味着尤其在耐久性以及可能以比较高的电功率运行方面被改进的半导体模块（10）。

Claims (11)

1.具有承载至少一个半导体组件（20）的陶瓷电路载体（50）的半导体模块（10），其中所述至少一个半导体组件（20）被包封物质（30）覆盖，
其特征在于，
所述包封物质（30）包括硬化的无机粘合剂并且具有2至10ppm/K的范围中的热膨胀系数，并且其中所述陶瓷电路载体（50）的陶瓷选自如下组，所述组由基于氧化铝、氮化铝或者氮化硅的陶瓷组成，
所述硬化的无机粘合剂通过如下步骤来构成：将由无机粘结剂和无机添加物构成的粉末状的混合物与水混合成可浇注的物质；浇注如此构成的可浇注的物质；然后使被浇注的物质凝固以及干燥，
由无机粘结剂和无机添加物构成的粉末状的混合物是磷酸盐粘合剂。
2.根据权利要求1所述的半导体模块（10），
其中所述包封物质（30）由硬化的无机粘合剂构成。
3.根据权利要求1所述的半导体模块（10），
其特征在于，
所述磷酸盐粘合剂是磷酸镁粘合剂。
4.根据权利要求3所述的半导体模块（10），
其特征在于，
所述磷酸盐粘合剂是包含氧化镁和硅酸锆的磷酸镁粘合剂。
5.根据前述权利要求之一所述的半导体模块（10），
其特征在于，
所述包封物质（30）被构造为“圆顶封装体”。
6.根据权利要求1至4之一所述的半导体模块（10），
其特征在于，
所述包封物质（30）部分地或者完全地包封与所述半导体组件（20）连接的接触元件（40）。
7.根据权利要求1、3、4之一所述的半导体模块（10），
其特征在于，
所述包封物质（30）包括关于所述包封物质（30）的体积占25至90体积百分比的总体积份额的氮化铝颗粒、氮化硼颗粒、氧化铝颗粒和/或氮化硅颗粒。
8.根据权利要求1、3、4之一所述的半导体模块（10），
其特征在于，
所述包封物质（30）包括一种或多种不同类型的纤维。
9.根据权利要求1至4之一所述的半导体模块（10），
其特征在于至少一个在物质上与所述包封物质（30）连接的冷却体（80）。
10.根据权利要求9所述的半导体模块（10），
其特征在于，
所述冷却体（80）是空气冷却的或者液体冷却的冷却体。
11.根据权利要求1至4之一所述的半导体模块（10），
其特征在于，
所述半导体模块（10）是功率电子部件。
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015102041A1 (de) 2015-02-12 2016-08-18 Danfoss Silicon Power Gmbh Leistungsmodul
DE102015223443A1 (de) * 2015-11-26 2017-06-01 Robert Bosch Gmbh Elektrische Vorrichtung mit einer Umhüllmasse
DE102016226262A1 (de) 2016-12-28 2018-06-28 Robert Bosch Gmbh Elektronikmodul, Verfahren
DE102017108114A1 (de) 2017-04-13 2018-10-18 Infineon Technologies Ag Chipmodul mit räumlich eingeschränktem thermisch leitfähigen Montagekörper
DE102017207424A1 (de) * 2017-05-03 2018-11-08 Robert Bosch Gmbh Verfahren zur Herstellung einer elektrischen Vorrichtung mit einer Umhüllmasse
WO2019025033A1 (de) 2017-07-31 2019-02-07 Heraeus Deutschland GmbH & Co. KG Zusammensetzung zur herstellung einer wässrigen umhüllungsmasse
WO2019025034A1 (de) 2017-07-31 2019-02-07 Heraeus Deutschland GmbH & Co. KG Zusammensetzung zur herstellung einer wässrigen umhüllungsmasse
KR102394746B1 (ko) * 2017-07-31 2022-05-06 헤레우스 도이칠란트 게엠베하 운트 코. 카게 수성 코팅물을 제조하기 위한 다성분 조성물
CN109727925A (zh) * 2017-10-31 2019-05-07 华润微电子（重庆）有限公司 一种提高塑封模块可靠性的封装结构及方法
WO2019091604A1 (de) 2017-11-08 2019-05-16 Heraeus Deutschland GmbH & Co. KG Zusammensetzung zur herstellung einer wässrigen umhüllungsmasse
US20190357386A1 (en) * 2018-05-16 2019-11-21 GM Global Technology Operations LLC Vascular polymeric assembly
DE102018214641B4 (de) * 2018-08-29 2022-09-22 Robert Bosch Gmbh Vergussmasse, Verfahren zum elektrischen Isolieren eines elektrischen oder elektronischen Bauteils unter Verwendung der Vergussmasse, elektrisch isoliertes Bauteil, hergestellt über ein solches Verfahren und Verwendung der Vergussmasse
DE102018215694A1 (de) * 2018-09-14 2020-03-19 Robert Bosch Gmbh Vergussmasse, elektrisch isoliertes elektrisches oder elektronisches Bauteil und Verfahren zu dessen elektrischer Isolierung
US11682606B2 (en) * 2019-02-07 2023-06-20 Ford Global Technologies, Llc Semiconductor with integrated electrically conductive cooling channels
CN109824367A (zh) * 2019-02-21 2019-05-31 国网河南省电力公司社旗县供电公司 一种碳化硅基复合电路板及其制备方法
WO2022139674A1 (en) * 2020-12-23 2022-06-30 Heraeus Deutschland Gmbh & Co. Kg. Process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages
EP4095894A1 (de) 2021-05-26 2022-11-30 Heraeus Deutschland GmbH & Co. KG Mit einer umhüllung aus einer hydraulisch gehärteten anorganischen zementzusammensetzung versehenes elektronikobjekt
EP4245737A1 (de) 2022-03-18 2023-09-20 Heraeus Deutschland GmbH & Co. KG Hydraulisch härtbare anorganische zementzusammensetzung
EP4273110A1 (de) 2022-05-02 2023-11-08 Heraeus Deutschland GmbH & Co. KG Hydraulisch härtbare anorganische zementzusammensetzung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103295976A (zh) * 2012-03-01 2013-09-11 英飞凌科技股份有限公司 芯片装置以及用于形成芯片装置的方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514413A1 (de) 1965-03-11 1969-06-12 Siemens Ag Verfahren zum Herstellen von vorzugsweise temperaturbestaendigen Halbleiterbauelementen
JPS58225121A (ja) * 1982-06-23 1983-12-27 Sanyurejin Kk エポキシ樹脂組成物及びそれを用いる電子部品の封止方法
US4529755A (en) 1982-10-23 1985-07-16 Denki Kagaku Kogyo Kabushiki Kaisha Epoxy resin composition for encapsulating semiconductor
JPS60226149A (ja) * 1984-04-25 1985-11-11 Nec Corp ヒ−トシンク付セラミツクパツケ−ジ
JPS6136318A (ja) * 1984-07-30 1986-02-21 Hitachi Chem Co Ltd エポキシ樹脂組成物
JPH02229858A (ja) * 1988-11-12 1990-09-12 Kureha Chem Ind Co Ltd 電子部品封止用樹脂組成物および封止電子部品
JPH03155655A (ja) * 1989-11-14 1991-07-03 Matsushita Electric Ind Co Ltd チップオンボード型印刷回路板
JPH10251343A (ja) * 1997-03-13 1998-09-22 Nippon Zeon Co Ltd 熱可塑性ノルボルネン系重合体及びエポキシ基含有ノルボルネン系重合体
SE514686C2 (sv) * 1998-10-12 2001-04-02 Doxa Certex Ab Dimensionsstabila bindemedelssystem
US7034660B2 (en) 1999-02-26 2006-04-25 Sri International Sensor devices for structural health monitoring
JP3797021B2 (ja) * 1999-05-31 2006-07-12 三菱電機株式会社 電力用半導体装置
US6164615A (en) * 1999-06-21 2000-12-26 Basham; L. Robert Corrosion resistant machine foundation
US7723162B2 (en) * 2002-03-22 2010-05-25 White Electronic Designs Corporation Method for producing shock and tamper resistant microelectronic devices
JP2007158280A (ja) * 2005-12-09 2007-06-21 Hitachi Ltd モールド型半導体装置及びその製造方法
US8617913B2 (en) * 2006-08-23 2013-12-31 Rockwell Collins, Inc. Alkali silicate glass based coating and method for applying
US8637980B1 (en) * 2007-12-18 2014-01-28 Rockwell Collins, Inc. Adhesive applications using alkali silicate glass for electronics
JP2009067890A (ja) * 2007-09-13 2009-04-02 Nisshinbo Ind Inc 半導体封止材用充填剤および半導体封止材組成物
DE102008007021A1 (de) * 2008-01-31 2009-08-06 Osram Gesellschaft mit beschränkter Haftung Drossel und Verfahren zum Herstellen einer Drosselkerneinheit für eine Drossel
JP2009252838A (ja) * 2008-04-02 2009-10-29 Mitsubishi Electric Corp 半導体装置
KR101013555B1 (ko) * 2008-10-09 2011-02-14 주식회사 하이닉스반도체 반도체 패키지 및 이의 제조 방법
JP5691794B2 (ja) * 2008-10-20 2015-04-01 株式会社デンソー 電子制御装置
JP4941509B2 (ja) * 2008-10-20 2012-05-30 株式会社デンソー 電子制御装置
JP5688257B2 (ja) 2009-10-28 2015-03-25 芦森工業株式会社 バックル装置
CN102596564B (zh) * 2009-11-23 2014-11-12 应用纳米结构方案公司 含有碳纳米管并入的纤维材料的陶瓷复合材料及其制备方法
JP5902543B2 (ja) * 2012-04-20 2016-04-13 三菱電機株式会社 半導体装置及びその製造方法
JP2013229392A (ja) * 2012-04-24 2013-11-07 Olympus Corp 厚膜パターン形成方法
KR101388815B1 (ko) * 2012-06-29 2014-04-23 삼성전기주식회사 반도체 패키지
US9815738B2 (en) * 2012-10-09 2017-11-14 Premier Magnesia, Llc Magnesium phosphate cement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103295976A (zh) * 2012-03-01 2013-09-11 英飞凌科技股份有限公司 芯片装置以及用于形成芯片装置的方法

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