CN106029217A - 等离子体前级热反应器系统 - Google Patents
等离子体前级热反应器系统 Download PDFInfo
- Publication number
- CN106029217A CN106029217A CN201580009058.5A CN201580009058A CN106029217A CN 106029217 A CN106029217 A CN 106029217A CN 201580009058 A CN201580009058 A CN 201580009058A CN 106029217 A CN106029217 A CN 106029217A
- Authority
- CN
- China
- Prior art keywords
- plasma reactor
- plasma
- subsystem
- prime
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012423 maintenance Methods 0.000 claims abstract description 24
- 238000001816 cooling Methods 0.000 claims description 20
- 230000008676 import Effects 0.000 claims 5
- 238000007599 discharging Methods 0.000 claims 1
- 230000008030 elimination Effects 0.000 claims 1
- 238000003379 elimination reaction Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 149
- 238000000034 method Methods 0.000 abstract description 52
- 239000002245 particle Substances 0.000 abstract description 21
- 238000010926 purge Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461949217P | 2014-03-06 | 2014-03-06 | |
| US61/949,217 | 2014-03-06 | ||
| PCT/US2015/015048 WO2015134156A1 (en) | 2014-03-06 | 2015-02-09 | Plasma foreline thermal reactor system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106029217A true CN106029217A (zh) | 2016-10-12 |
Family
ID=54016800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580009058.5A Pending CN106029217A (zh) | 2014-03-06 | 2015-02-09 | 等离子体前级热反应器系统 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150252473A1 (https=) |
| JP (1) | JP2017510453A (https=) |
| KR (1) | KR102351585B1 (https=) |
| CN (1) | CN106029217A (https=) |
| TW (1) | TWI692542B (https=) |
| WO (1) | WO2015134156A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114025863A (zh) * | 2019-06-25 | 2022-02-08 | 应用材料公司 | 真空前级管道中用于颗粒收集的高效率捕捉器 |
| CN116670323A (zh) * | 2020-12-01 | 2023-08-29 | 应用材料公司 | 用于减少节流阀漂移的主动冷却式前级管道陷阱 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102477302B1 (ko) | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| US10337105B2 (en) | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
| US10535506B2 (en) | 2016-01-13 | 2020-01-14 | Mks Instruments, Inc. | Method and apparatus for deposition cleaning in a pumping line |
| WO2017131404A1 (ko) * | 2016-01-26 | 2017-08-03 | 주성엔지니어링(주) | 기판처리장치 |
| KR102567720B1 (ko) * | 2016-01-26 | 2023-08-17 | 주성엔지니어링(주) | 기판 처리 장치 |
| JP2019514222A (ja) | 2016-04-13 | 2019-05-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 排気冷却用装置 |
| CN109155233B (zh) * | 2016-04-15 | 2023-05-23 | 应用材料公司 | 利用氧等离子体清洁循环的等离子体减量固体回避法 |
| JP6738485B2 (ja) * | 2016-08-26 | 2020-08-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 低圧リフトピンキャビティハードウェア |
| JP6606670B2 (ja) * | 2017-01-30 | 2019-11-20 | パナソニックＩｐマネジメント株式会社 | フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法 |
| US10695713B2 (en) | 2017-01-30 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Flux recovery device, and reflow apparatus and gas exchange method using the same |
| KR102210393B1 (ko) | 2017-02-09 | 2021-02-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 수증기 및 산소 시약을 이용하는 플라즈마 저감 기술 |
| WO2018212940A1 (en) | 2017-05-19 | 2018-11-22 | Applied Materials, Inc. | Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent |
| GB2564399A (en) * | 2017-07-06 | 2019-01-16 | Edwards Ltd | Improvements in or relating to pumping line arrangements |
| WO2019120358A1 (de) * | 2017-12-21 | 2019-06-27 | centrotherm international AG | Verfahren zum betrieb einer abscheideanlage |
| US10889891B2 (en) * | 2018-05-04 | 2021-01-12 | Applied Materials, Inc. | Apparatus for gaseous byproduct abatement and foreline cleaning |
| US11221182B2 (en) | 2018-07-31 | 2022-01-11 | Applied Materials, Inc. | Apparatus with multistaged cooling |
| US11306971B2 (en) | 2018-12-13 | 2022-04-19 | Applied Materials, Inc. | Heat exchanger with multistaged cooling |
| TWI783382B (zh) * | 2020-03-18 | 2022-11-11 | 日商國際電氣股份有限公司 | 基板處理裝置，排氣裝置及半導體裝置的製造方法 |
| KR102300561B1 (ko) * | 2020-07-31 | 2021-09-13 | 삼성전자주식회사 | 증착 시스템 및 공정 시스템 |
| US11745229B2 (en) | 2020-08-11 | 2023-09-05 | Mks Instruments, Inc. | Endpoint detection of deposition cleaning in a pumping line and a processing chamber |
| US11664197B2 (en) | 2021-08-02 | 2023-05-30 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20230083516A (ko) * | 2021-12-03 | 2023-06-12 | 삼성전자주식회사 | 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법 |
| KR102490651B1 (ko) * | 2022-08-18 | 2023-01-20 | 주식회사 미래보 | 반도체 공정 시 발생하는 반응부산물 포집 장치의 신속 교체를 통한 공정 정지 로스 감축 시스템 |
| US12159765B2 (en) | 2022-09-02 | 2024-12-03 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
| KR20240115465A (ko) | 2023-01-19 | 2024-07-26 | 삼성전자주식회사 | 플라즈마 소스를 갖는 배기가스 처리 장치 및 이를 포함하는 기판 처리 장치 |
| US12455119B2 (en) | 2023-04-10 | 2025-10-28 | Applied Materials, Inc. | Regenerator for foreline heating |
| KR102814486B1 (ko) * | 2024-01-24 | 2025-05-29 | 주식회사 에이치피에스피 | 고압 기판 처리 장치 및 그에 사용되는 콜드 트랩 |
| WO2025250609A1 (en) * | 2024-05-30 | 2025-12-04 | Lam Research Corporation | Coating surfaces within a pumping path of a processing tool |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6156667A (en) * | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| CN102317686A (zh) * | 2009-02-11 | 2012-01-11 | 爱德华兹有限公司 | 处理废气流的方法 |
| CN102640255A (zh) * | 2009-12-03 | 2012-08-15 | 应用材料公司 | 用于对处理系统中的排放气体进行处理的方法和设备 |
| CN203002192U (zh) * | 2012-12-28 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种过氧化氢等离子体灭菌器的废气分解装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3171593B2 (ja) * | 1990-10-09 | 2001-05-28 | 東京エレクトロン株式会社 | トラップ装置 |
| JP2996524B2 (ja) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | ポリイミド硬化装置 |
| JPH05195952A (ja) | 1992-01-17 | 1993-08-06 | Matsushita Electric Ind Co Ltd | クライオパネル装置 |
| JPH115012A (ja) * | 1997-06-16 | 1999-01-12 | Kenji Inoue | 排ガス処理方法および処理装置 |
| JP2000026971A (ja) * | 1998-07-10 | 2000-01-25 | Kokusai Electric Co Ltd | Ｃｖｄ装置の排ガス処理装置 |
| JP2000262841A (ja) * | 1999-03-18 | 2000-09-26 | Kokusai Electric Co Ltd | トラップ装置及び半導体製造装置 |
| US6291938B1 (en) | 1999-12-31 | 2001-09-18 | Litmas, Inc. | Methods and apparatus for igniting and sustaining inductively coupled plasma |
| JP4549563B2 (ja) * | 2001-03-22 | 2010-09-22 | 三菱電機株式会社 | ハロゲン含有ガスの処理装置 |
| US7060234B2 (en) * | 2001-07-18 | 2006-06-13 | Applied Materials | Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers |
| JP2005142377A (ja) * | 2003-11-07 | 2005-06-02 | Mitsubishi Heavy Ind Ltd | クリーニングガスのリサイクルシステム |
| US20060090773A1 (en) | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
| GB0505674D0 (en) * | 2005-03-22 | 2005-04-27 | Boc Group Plc | Trap device |
| US20090175771A1 (en) * | 2006-03-16 | 2009-07-09 | Applied Materials, Inc. | Abatement of effluent gas |
| KR101041026B1 (ko) * | 2008-09-01 | 2011-06-13 | 한국에너지기술연구원 | 공동형 플라즈마 토치, 플라즈마/가스 혼합형 연소장치 및이를 이용한 용융방법 |
| US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
-
2015
- 2015-02-09 WO PCT/US2015/015048 patent/WO2015134156A1/en not_active Ceased
- 2015-02-09 KR KR1020167027155A patent/KR102351585B1/ko active Active
- 2015-02-09 JP JP2016573647A patent/JP2017510453A/ja active Pending
- 2015-02-09 CN CN201580009058.5A patent/CN106029217A/zh active Pending
- 2015-02-24 US US14/630,631 patent/US20150252473A1/en not_active Abandoned
- 2015-03-06 TW TW104107225A patent/TWI692542B/zh active
-
2019
- 2019-03-28 US US16/368,170 patent/US10920315B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| US6156667A (en) * | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| CN102317686A (zh) * | 2009-02-11 | 2012-01-11 | 爱德华兹有限公司 | 处理废气流的方法 |
| CN102640255A (zh) * | 2009-12-03 | 2012-08-15 | 应用材料公司 | 用于对处理系统中的排放气体进行处理的方法和设备 |
| CN203002192U (zh) * | 2012-12-28 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种过氧化氢等离子体灭菌器的废气分解装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114025863A (zh) * | 2019-06-25 | 2022-02-08 | 应用材料公司 | 真空前级管道中用于颗粒收集的高效率捕捉器 |
| CN116670323A (zh) * | 2020-12-01 | 2023-08-29 | 应用材料公司 | 用于减少节流阀漂移的主动冷却式前级管道陷阱 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201600623A (zh) | 2016-01-01 |
| JP2017510453A (ja) | 2017-04-13 |
| KR20160130261A (ko) | 2016-11-10 |
| KR102351585B1 (ko) | 2022-01-13 |
| WO2015134156A1 (en) | 2015-09-11 |
| TWI692542B (zh) | 2020-05-01 |
| US20150252473A1 (en) | 2015-09-10 |
| US20190226083A1 (en) | 2019-07-25 |
| US10920315B2 (en) | 2021-02-16 |
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