KR102351585B1 - 플라즈마 포어라인 열 반응기 시스템 - Google Patents

플라즈마 포어라인 열 반응기 시스템 Download PDF

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KR102351585B1
KR102351585B1 KR1020167027155A KR20167027155A KR102351585B1 KR 102351585 B1 KR102351585 B1 KR 102351585B1 KR 1020167027155 A KR1020167027155 A KR 1020167027155A KR 20167027155 A KR20167027155 A KR 20167027155A KR 102351585 B1 KR102351585 B1 KR 102351585B1
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South Korea
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foreline
plasma reactor
plasma
exhaust gases
vacuum processing
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KR20160130261A (ko
Inventor
콜린 존 디킨스
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treating Waste Gases (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020167027155A 2014-03-06 2015-02-09 플라즈마 포어라인 열 반응기 시스템 Active KR102351585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461949217P 2014-03-06 2014-03-06
US61/949,217 2014-03-06
PCT/US2015/015048 WO2015134156A1 (en) 2014-03-06 2015-02-09 Plasma foreline thermal reactor system

Publications (2)

Publication Number Publication Date
KR20160130261A KR20160130261A (ko) 2016-11-10
KR102351585B1 true KR102351585B1 (ko) 2022-01-13

Family

ID=54016800

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167027155A Active KR102351585B1 (ko) 2014-03-06 2015-02-09 플라즈마 포어라인 열 반응기 시스템

Country Status (6)

Country Link
US (2) US20150252473A1 (https=)
JP (1) JP2017510453A (https=)
KR (1) KR102351585B1 (https=)
CN (1) CN106029217A (https=)
TW (1) TWI692542B (https=)
WO (1) WO2015134156A1 (https=)

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US12431340B2 (en) 2023-01-19 2025-09-30 Samsung Electronics Co., Ltd. Exhaust gas processing apparatus having plasma source and substrate processing apparatus including the same

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US10337105B2 (en) 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10535506B2 (en) 2016-01-13 2020-01-14 Mks Instruments, Inc. Method and apparatus for deposition cleaning in a pumping line
WO2017131404A1 (ko) * 2016-01-26 2017-08-03 주성엔지니어링(주) 기판처리장치
KR102567720B1 (ko) * 2016-01-26 2023-08-17 주성엔지니어링(주) 기판 처리 장치
JP2019514222A (ja) 2016-04-13 2019-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 排気冷却用装置
CN109155233B (zh) * 2016-04-15 2023-05-23 应用材料公司 利用氧等离子体清洁循环的等离子体减量固体回避法
JP6738485B2 (ja) * 2016-08-26 2020-08-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低圧リフトピンキャビティハードウェア
JP6606670B2 (ja) * 2017-01-30 2019-11-20 パナソニックＩｐマネジメント株式会社 フラックス回収装置およびリフロー装置ならびにフラックス回収装置における気体交換方法
US10695713B2 (en) 2017-01-30 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Flux recovery device, and reflow apparatus and gas exchange method using the same
KR102210393B1 (ko) 2017-02-09 2021-02-01 어플라이드 머티어리얼스, 인코포레이티드 수증기 및 산소 시약을 이용하는 플라즈마 저감 기술
WO2018212940A1 (en) 2017-05-19 2018-11-22 Applied Materials, Inc. Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent
GB2564399A (en) * 2017-07-06 2019-01-16 Edwards Ltd Improvements in or relating to pumping line arrangements
WO2019120358A1 (de) * 2017-12-21 2019-06-27 centrotherm international AG Verfahren zum betrieb einer abscheideanlage
US10889891B2 (en) * 2018-05-04 2021-01-12 Applied Materials, Inc. Apparatus for gaseous byproduct abatement and foreline cleaning
US11221182B2 (en) 2018-07-31 2022-01-11 Applied Materials, Inc. Apparatus with multistaged cooling
US11306971B2 (en) 2018-12-13 2022-04-19 Applied Materials, Inc. Heat exchanger with multistaged cooling
CN120227695A (zh) * 2019-06-25 2025-07-01 应用材料公司 真空前级管道中用于颗粒收集的高效率捕捉器
TWI783382B (zh) * 2020-03-18 2022-11-11 日商國際電氣股份有限公司 基板處理裝置，排氣裝置及半導體裝置的製造方法
KR102300561B1 (ko) * 2020-07-31 2021-09-13 삼성전자주식회사 증착 시스템 및 공정 시스템
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber
US12060637B2 (en) * 2020-12-01 2024-08-13 Applied Materials, Inc. Actively cooled foreline trap to reduce throttle valve drift
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
KR20230083516A (ko) * 2021-12-03 2023-06-12 삼성전자주식회사 기판 처리 시스템, 및 이를 사용한 반도체 소자의 제조 방법
KR102490651B1 (ko) * 2022-08-18 2023-01-20 주식회사 미래보 반도체 공정 시 발생하는 반응부산물 포집 장치의 신속 교체를 통한 공정 정지 로스 감축 시스템
US12159765B2 (en) 2022-09-02 2024-12-03 Mks Instruments, Inc. Method and apparatus for plasma generation
US12455119B2 (en) 2023-04-10 2025-10-28 Applied Materials, Inc. Regenerator for foreline heating
KR102814486B1 (ko) * 2024-01-24 2025-05-29 주식회사 에이치피에스피 고압 기판 처리 장치 및 그에 사용되는 콜드 트랩
WO2025250609A1 (en) * 2024-05-30 2025-12-04 Lam Research Corporation Coating surfaces within a pumping path of a processing tool

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Publication number Priority date Publication date Assignee Title
US12431340B2 (en) 2023-01-19 2025-09-30 Samsung Electronics Co., Ltd. Exhaust gas processing apparatus having plasma source and substrate processing apparatus including the same

Also Published As

Publication number Publication date
TW201600623A (zh) 2016-01-01
JP2017510453A (ja) 2017-04-13
KR20160130261A (ko) 2016-11-10
CN106029217A (zh) 2016-10-12
WO2015134156A1 (en) 2015-09-11
TWI692542B (zh) 2020-05-01
US20150252473A1 (en) 2015-09-10
US20190226083A1 (en) 2019-07-25
US10920315B2 (en) 2021-02-16

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