CN105874592A - 冷却器及冷却器的固定方法 - Google Patents
冷却器及冷却器的固定方法 Download PDFInfo
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Abstract
本发明提供一种冷却器及该冷却器的固定方法,所述冷却器用于冷却半导体模块,在用于将冷却器固定在基体上的连接区域也具备制冷剂流路,冷却效率高,且节省空间。在将冷却半导体模块(10)的冷却器(20)固定在基体上的固定方法中,优选地,使用冷却器(20),该冷却器(20)具备冷却器主体和盖(50),所述冷却器主体具备由第一壁部(21a)、第二壁部(21b)及侧壁部(21c)所围成的制冷剂流路,其中,第一壁部(21a)具有第一通孔(26),第二壁部(21b)与第一壁部(21a)对置配置,且在与第一通孔(26)对置的位置上具备与基体(30)连接的连接区域(27),侧壁部(21c)连接第一壁部(21a)的周围与第二壁部(21b)的周围;盖(50)堵塞第一通孔(26),在以与基体(30)接触的方式定位所述第二壁部(21b)的外侧的状态下,通过第一通孔(26)插入固定装置(40),将所述连接区域(27)固定在所述基体(30)上,利用所述盖堵塞第一通孔(26)。
Description
技术领域
本发明涉及一种冷却器及该冷却器的固定方法,该冷却器用于冷却半导体模块,在用于将冷却器固定在基体上的连接区域也具备制冷剂流路,冷却效率高,且节省空间。
背景技术
面向实现低碳社会,正在加速导入使用了能量转换效率高的逆变电路的电源、电动机,以及应用这些电源、电动机的混合动力汽车、电动汽车等。在这些领域中,称为功率半导体元件的整流二极管、功率MOSFET(金属氧化物半导体场效应晶体管)、IGBT(绝缘栅双极型晶体管)、晶闸管等被用于大电流控制。功率半导体元件有时也会以单体组装在电路基板上,但也使用将多个功率半导体元件集成到一个封装内的半导体模块,或者也包含控制电路、驱动电路、保护电路等模块化而成的智能功率模块(IPM)。
也存在以下领域,在功率半导体元件中,虽然进行了降低通态电阻的相关设计,但仍无法避免伴随高输出化的发热量的增加,已经开始从风冷式向液冷式转移。尤其是关于搭载了多个功率半导体元件的半导体模块,由于发热量大,因此在冷却效率方面优选为液冷式。但是,如果设为液冷式,则将增加循环泵、二次冷却器等附属装置,零件数量增加,因此各个零件需要尽可能小型化。尤其在用于电动汽车时,由于安装空间有限,因此半导体模块及冷却器的小型化成为优先级最高的技术问题之一。
在冷却器的小型化中,设置在制冷剂流通的流路上的隔壁、散热片的结构优化最为重要,但除此之外,将冷却器安装在基体上所需的装配部的尺寸减小也很重要。
在专利文献1-4中公开有利用螺钉将半导体模块和冷却器连结固定的固定法。
现有技术文献
专利文献
专利文献1:日本专利公开平成8-321570号公报
专利文献2:日本专利公开平成9-22971号公报
专利文献3:日本专利公开2002-141450号公报
专利文献4:日本专利公开2008-235725号公报
发明内容
(一)要解决的技术问题
但是,以往采用通过贯穿冷却器主体的螺栓、螺钉等固定部件将冷却器连结在基体上的结构,在所述固定部件贯穿的位置上,不能设置制冷剂的流路,只得设置迂回的流路,存在因冷却不足而成为热点的危险性。另外,在冷却器内部设置散热片或隔壁的情况下,所述固定部件的贯穿位置将阻碍散热片或隔离壁的设置,难以实现优先考虑冷却效率的配置。
因此,本发明的目的在于提供一种冷却器及该冷却器的固定方法,该冷却器用于冷却半导体模块,在用于将冷却器固定在基体上的连接区域也具备制冷剂流路,冷却效率高,且节省空间。
(二)技术方案
为了实现上述目的,本发明的冷却器固定在基体上,用于冷却半导体模块,其特征在于,具备:冷却器主体,其具备由第一壁部、第二壁部及侧壁部所围成的制冷剂流路,其中,所述第一壁部具有第一通孔,所述第二壁部与所述第一壁部对置配置,且在与所述第一通孔对置的位置上具备与所述基体连接的连接区域,所述侧壁部连接所述第一壁部的周围与所述第二壁部的周围;盖,其堵塞所述第一通孔。
另外,在本发明的冷却器中,优选地,在所述第二壁部的所述连接区域设置有第二通孔,具备固定部件,其大小为可通过所述第一通孔,所述固定部件被插入所述第二通孔,将所述冷却器主体固定在所述基体上。
另外,在本发明的冷却器中,优选地,所述第二通孔的所述制冷剂流路侧的内径比所述第二通孔的所述基体侧的内径宽。
另外,在本发明的冷却器中,优选地,所述固定部件为由头部和螺纹部构成的螺钉,所述第二通孔的所述制冷剂流路侧设置有沟槽,以收容所述螺钉的所述头部,所述头部被配置为不突出到所述制冷剂流路。
另外,在本发明的冷却器中,优选地,在所述第二通孔与所述固定部件之间具备密封部件。
另外,在本发明的冷却器中,优选地,在所述第二壁部的所述连接区域设置有壁厚比其他区域的壁厚薄的壁部。
另外,在本发明的冷却器中,优选地,在所述第一壁部的制冷剂流路侧以不阻塞所述第一通孔的方式连接有多个散热片。
另外,在本发明的冷却器中,优选地,所述盖形成为可从所述第一壁部自由装卸。
另外,在本发明的冷却器中,优选地,所述盖设置为不突出到所述制冷剂流路。
另外,在本发明的冷却器中,优选地,所述半导体模块固定在所述第一壁部的外侧,所述第一壁部的厚度比所述第二壁部的厚度薄。
本发明的冷却器的固定方法将冷却半导体模块的冷却器固定在基体上,其特征在于,包含:第一工序,准备冷却器,所述冷却器具备冷却器主体和盖,所述冷却器主体具备由第一壁部、第二壁部及侧壁部所围成的制冷剂流路,其中,所述第一壁部具有第一通孔,所述第二壁部与所述第一壁部对置配置,且在与所述第一通孔对置的位置上具备与所述基体连接的连接区域,所述侧壁部连接所述第一壁部的周围与所述第二壁部的周围,所述盖堵塞所述第一通孔;第二工序,以与所述基体接触的方式定位所述第二壁部的外侧;第三工序,通过所述第一通孔插入连接装置,将所述连接区域固定在所述基体上;第四工序,利用所述盖堵塞所述第一通孔。
另外,在本发明的冷却器的固定方法中,优选地,在所述第一工序中,作为所述冷却器,使用在所述第二壁部的所述连接区域具有第二通孔的冷却器,在所述第三工序中,作为所述连接装置,使用大小为可通过所述第一通孔,被插入所述第二通孔,将所述冷却器主体固定在所述基体上的固定部件,在所述基体与所述连接区域接触的部分上设置固定用孔,通过所述第一通孔将所述固定部件插入所述冷却器内,进一步从所述冷却器的内侧插入所述第二通孔,并将其固定在所述基体的固定用孔中。
另外,在本发明的冷却器的固定方法中,优选地,在所述第三工序中,作为所述连接装置使用焊接工具,通过所述第一通孔将所述焊接工具插入所述冷却器内,并将所述连接区域焊接固定在所述基体上。
(三)有益效果
根据本发明,能够提供一种冷却器及该冷却器的固定方法,该冷却器用于冷却半导体模块,在用于将冷却器固定在基体上的连接区域也具备制冷剂流路,冷却效率高,且节省空间。
附图说明
图1为表示半导体模块的电路的一例的示意图。
图2为表示半导体模块的结构的一例的示意图。
图3为本发明的冷却器的第一实施方式的结构示意图。
图4为表示本发明的冷却器的第一实施方式的装配次序的示意图。
图5为本发明的冷却器的第二实施方式的结构示意图。
图6为表示本发明的冷却器的第二实施方式的装配次序的示意图。
图7为表示改变了本发明冷却器的连接区域的另一实施方式的结构示意图。
图8为表示改变了本发明冷却器的连接区域的又一实施方式的结构示意图。
图9为表示改变了本发明冷却器的连接区域的又一实施方式的结构示意图。
图10为表示改变了本发明冷却器的连接区域的又一实施方式的结构示意图。
具体实施方式
在本发明中,半导体模块的结构并没有特别限定,但可适用于例如具有如下所述的逆变电路的半导体模块等。
图1中示出将直流功率转换为三相交流的逆变电路1。该逆变电路1由一个半导体元件(三极管)11a和一个半导体元件(二极管)11b构成元件对2,将元件对2串联构成半桥3,将半桥3并联而构成。
图2(a)中示出搭载了该逆变电路1的半导体模块10的俯视示意图。即,在基板12上搭载半导体元件(三极管)11a和半导体元件(二极管)11b各一个,并通过导线(未图示)电连接,能够构成图1所示的元件对2。在半导体模块10上搭载两行三列共6个基板12,并按照图1所示的电路图,通过导线电连接,能够构成逆变电路1。
另外,半导体模块10能够搭载具备半导体元件(三极管)11a的栅极驱动控制和/或电路保护功能(短路、过流、控制电源电压下降、过热)的控制用集成电路13。具备控制用集成电路13的功率半导体模块被称为IPM(Intelligent Power Module,智能功率模块)。
另外,为了抑制噪声、测定温度,半导体模块10根据需要可搭载电容、电阻和/或热敏电阻等无源元件14。
图2(b)中示出半导体模块10的剖面示意图。
绝缘基板12a的表面及背面形成有导体层12b及12c,从而构成基板12。绝缘基板12a优选为热传导性优异的氮化铝、氧化铝等陶瓷基板。导体层12b及12c可由铜等金属形成。
半导体元件(三极管)11a及半导体元件(二极管)11b能够经由焊料层15接合在导体层12b上。
根据本发明的一个实施方式,基板12能够将其背面的导体层12c经由焊料层16直接接合在冷却器20上。
另外,根据本发明另一实施方式,基板12能够将其背面的导体层12c经由焊料层16接合在铜或者镀镍的铝等底板17上,并在该底板17的背面涂覆导热膏(サーマルグリース),按压到冷却器20上。
此外,半导体模块10可以在对半导体元件(三极管)11a、半导体元件(二极管)11b、控制用集成电路13、无源元件14及基板12利用导线进行布线后,填充包含硅凝胶或玻璃填料的热固性树脂并密封。
本发明的冷却器不仅可用于如上所述的半导体模块的冷却,也可用于由单芯片构成的大规模集成电路、分立半导体、或者无源元件、片式电阻、片式电感的冷却。
半导体元件(三极管)11a可使用通态电阻低、切换速度快的IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)或者SiC-MOSFET。
另外,半导体元件(二极管)11b可使用通态电阻低、耐压高的SiC二极管。
作为半导体元件(三极管)11a,形成在Si基板上的传统结构的功率MOSFET与IGBT或SiC-MOSFET相比,通态电阻高、性能差,但由于内置有体二极管,因此不需要半导体元件(二极管)11b。因此,能够将逆变电路集成在一个芯片上,用于小功率用途。
本发明涉及用于冷却如上所述的半导体模块10的冷却器20及其固定方法。即,如图3(b)所示,设置有半导体模块10的冷却器20被固定在某些基体30上使用。
以往,为了向基体30固定,在冷却器20上制冷剂流路以外的部分形成有通孔,利用通过该通孔而插入的螺栓等螺钉,将冷却器20固定在基体30上。但是,在这种结构中,需要避开通孔来形成制冷剂流路,因此存在冷却器大型化、制冷剂流路的流动变差的问题。本发明是为了解决上述技术问题而完成的。
下面,参照图3、4,对本发明的冷却器及其固定方法的第一实施方式进行说明。图3(a)中示出本发明的第一实施方式的冷却器20的俯视示意图,图3(b)中示出其A-A’剖面示意图。
本发明的冷却器20由壁部21、散热片22、制冷剂导入口23及制冷剂排出口24构成,壁部21由第一壁部21a、第二壁部21b及侧壁部21c构成,其中,所述第一壁部21a与半导体模块10接合,且具有第一通孔26,所述第二壁部21b与所述第一壁部21a对置配置,且在与所述第一通孔26对置的位置上具备与基体30连接的连接区域27,所述侧壁部21c连接所述第一壁部21a的周围与所述第二壁部21b的周围,第二壁部21b在连接区域27具备第二通孔28。而且,在由第一壁部21a、第二壁部21b、侧壁部21c所围成的空间中形成有制冷剂导入流路25a、冷却流路25b、制冷剂排出流路25c。本发明中将所有这些流路统称为制冷剂流路。
在第一壁部21a连接有散热片22。散热片22可使用针式散热片、刀片式散热片、波纹式散热片。针式散热片的针可使用圆柱或者四棱柱的针,可进行方形配置或者交错配置。刀片式散热片和波纹式散热片可以设为平直的形状,以形成直线流路,但也可以设为使散热片波状起伏以使流路蜿蜒曲折的迂回式散热片、将散热片在纵向上分割,并在横向上偏置排列的偏置式散热片。
壁部21及散热片22优选使用热传导性高的材料来形成,例如铝、铝合金、铜、铜合金等金属材料,为了提高传导性,更优选通过焊接或者铸造一体成型。
该冷却器20中,制冷剂导入口23和制冷剂排出口24配置在冷却器的壁部21的对角线上。另外,第一通孔26和第二通孔28配置在冷却器的壁部21的四个角上。
冷却器20在使用时,制冷剂从制冷剂导入口23流入制冷剂导入流路25a,分散在形成于散热片22之间的多个冷却流路25b中流动,并在制冷剂排出流路25c中汇集,从制冷剂排出口24排出。通过制冷剂,第一壁部21a和散热片22被冷却,通过被冷却的第一壁部21a,半导体模块10被冷却。
接着,对将上述冷却器20固定在基体30上的方法进行说明。图4(a)中示出冷却器20的固定操作前的状态。图4(b)中示出冷却器20的固定操作中的状态。图4(c)中示出冷却器20的固定操作后的状态。
该实施方式中,在基体30上设置有用于固定冷却器20的固定用孔31。另外,第一通孔26的内径设为固定部件40及密封部件41可通过的大小,散热片22以不阻塞第一通孔26的方式配置,以不妨碍固定部件40及密封部件41的通过。
另外,第二通孔28的制冷剂导入流路25a及制冷剂排出流路25c侧的内径比所述第二通孔28的所述基体30侧的内径宽。第二通孔28的内径被扩大的部分构成了本发明中的“沟槽”。
另外,固定部件40优选为由头部和螺纹部构成的螺钉。在固定部件40由螺钉构成的情况下,固定用孔31设为该螺钉所旋合的螺孔。另外,在第二通孔28的制冷剂流路侧设置有上述沟槽,以收纳固定部件40的头部和密封部件41,使固定部件40的头部不突出到所述制冷剂流路。
螺钉的形状没有特别限定,但优选如短头螺钉、平头螺钉、盘头螺钉、埋头螺钉那样头部平坦,更优选短头螺钉和平头螺钉。
密封部件41没有特别限定,可使用O型环、橡胶垫片、PTFE冲裁垫片、密封胶条、液体密封材料。
准备如上所述的冷却器20的工序为本发明中的第一工序。
为了将上述冷却器20固定在基体30上,如图4(b)所示,将冷却器20定位设置在基体30上,并使第二壁部21b的外侧与基体30接触。该工序为本发明中的第二工序。
在该状态下,从第一通孔26插入固定部件40和密封部件41,经由密封部件41将固定部件40从冷却器20的内侧插入第二通孔28,并插入基体30的固定用孔31进行固定。在固定部件40由螺钉构成的情况下,能够通过将其旋入固定用孔31并紧固来进行固定。第二通孔28通过由固定用部材40的头部和第二壁部21b所夹持的密封部件41被气密性地密封。以上工序为本发明中的第三工序。
接着,在第一通孔26中,经由密封部件51插入盖50并固定,由此,能够气密性地堵塞第一通孔26。该工序为本发明中的第四工序。
盖50优选设置为不突出到所述制冷剂流路。另外,盖50优选为可从第一壁部21a自由装卸,例如,可使用由头部和螺纹部构成的螺钉。在该情况下,在第一通孔26的内周预先形成盖50的螺纹部所旋合的螺纹槽。
其结果,可在堵塞第一通孔26的盖50与插入第二通孔28的固定部件40之间确保制冷剂导入流路25a、制冷剂排出流路25c,在成为连接区域的第一通孔26、第二通孔28的部分上也能够形成制冷剂流路,因此,能够使冷却器20小型化,并且能够使制冷剂导入流路25a、制冷剂排出流路25c平直,使制冷剂流动良好。
接着,参照图5、6,对本发明的冷却器及其固定方法的第二实施方式进行说明。图5(a)中示出本发明第二实施方式的冷却器20a的俯视示意图,图5(b)中示出其A-A’剖面示意图。
该冷却器20a具有壁部21、散热片22、制冷剂导入口23及制冷剂排出口24,壁部21由第一壁部21a、第二壁部21b、侧壁部21c构成,所述第一壁部21a与半导体模块10接合,且具有第一通孔26,所述第二壁部21b与所述第一壁部21a对置配置,且在与所述第一通孔26对置的位置上具备与基体30连接的连接区域27,所述侧壁部21c连接所述第一壁部21a的周围和所述第二壁部21b的周围。
根据本发明的第二实施方式,在连接区域27中,优选从冷却器20的内侧形成凹陷,使第二壁部21b的壁厚变薄。
此外,冷却器20a除了连接区域27的形状之外,壁部21、散热片22、制冷剂导入口23及制冷剂排出口24能够使用与本发明的第一实施方式相同的部件。
接着,对将该冷却器20a固定在基体30上的方法进行说明。图6(a)中示出冷却器20a的固定操作前的状态。图6(b)中示出冷却器20a的固定操作中的状态。图6(c)中示出冷却器20a的固定操作后的状态。
本发明的第二实施方式中,基体30也可以在连接区域32中,在与冷却器20a接触的面的相反侧的面上形成凹陷,使壁厚变薄。
另外,第一通孔26的内径可设为连接装置60可通过的大小,散热片22能够以不阻塞第一通孔26的方式配置,以不妨碍连接装置60的通过。准备这样的冷却器20a的工序为本发明中的第一工序。
而且,该实施方式中,作为连接装置60,使用焊接工具。作为焊接工具,优选对冷却器20a的母材损害较少的点焊(搭接电阻焊)或者激光焊接。
首先,将冷却器20a定位设置在基体30上,并设为使第二壁部21b的外侧与基体30接触的状态。该工序为本发明的第二工序。
在该状态下,从第一通孔26插入构成连接装置60的焊接工具,通过将冷却器20a的连接区域27焊接在基体30的连接区域32上,将冷却器20a固定在基体30上。该工序为本发明的第三工序。
之后,将由焊接工具构成的连接装置60从第一通孔26拔出,并用盖50和密封部件41堵塞第一通孔26。该工序为本发明的第四工序。
在本发明的第二实施方式中,作为所述连接装置60,除了焊接工具之外,也可以使用钎焊工具等。在该情况下,在第二壁部21b的连接区域27与基体30的连接区域32之间预先设置钎料。
接着,对本发明的冷却器20的其它实施方式进行说明。
在图7所示的冷却器20b中,在制冷剂流路的中央部设置除去散热片22后的部分,并在这里也设置第一通孔26及第二通孔28。在该情况下,由于制冷剂流路的中央部也可以固定在基体上,因此,即使冷却器大型化,也能够牢固地进行固定。
在图8所示的冷却器20c中,将配置在冷却器的壁部21的四个角上的第一通孔26及第二通孔28减少至对角线上的两个角,在空出的位置配置导向壁29,控制制冷剂的流动,防止产生热点。
在图9所示的冷却器20d中,在冷却器的壁部21的中心线上配置制冷剂导入口23、制冷剂排出口24、第一通孔26、第二通孔28,并在空出的四个角上配置导向壁29。
在图10所示的冷却器20e中,在冷却器的壁部21的一侧配置制冷剂导入口23及制冷剂排出口24,为了实现流量的均匀化,在制冷剂导入流路25a及制冷剂导入流路25c上配置有导向壁29。
这样,根据本发明,能够结合制冷剂流路的设计比较自由地设定第一通孔26及第二通孔28的位置,能够促进冷却器的冷却效率的提高。
附图标记说明
1:逆变电路
2:元件对
3:半桥
10:半导体模块
11:半导体元件
11a:半导体元件(三极管)
11b:半导体元件(二极管)
12:基板
12a:绝缘基板
12b、12c:导体层
13:控制用集成电路
14:无源元件
15、16:焊料层
17:底板
20、20a、20b、20c、20d、20e:冷却器
21:壁部
21a:第一壁部
21b:第二壁部
21c:侧壁部
22:散热片
23:制冷剂导入口
24:制冷剂排出口
25a:制冷剂导入流路
25b:冷却流路
25c:制冷剂排出流路
26:第一通孔
27、32:连接区域
28:第二通孔
29:导向壁
30:基体
31:固定用孔
40:固定部件
41、51:密封部件
50:盖
60:连接装置
Claims (13)
1.一种冷却器,其固定在基体上,用于冷却半导体模块,其特征在于,具备:
冷却器主体,其具备由第一壁部、第二壁部及侧壁部所围成的制冷剂流路,其中,所述第一壁部具有第一通孔,所述第二壁部与所述第一壁部对置配置,且在与所述第一通孔对置的位置上具备与所述基体连接的连接区域,所述侧壁部连接所述第一壁部的周围与所述第二壁部的周围;
盖,其堵塞所述第一通孔。
2.根据权利要求1所述的冷却器,其特征在于,在所述第二壁部的所述连接区域设置有第二通孔,
具备固定部件,其大小为可通过所述第一通孔,所述固定部件被插入所述第二通孔,将所述冷却器主体固定在所述基体上。
3.根据权利要求2所述的冷却器,其特征在于,所述第二通孔的所述制冷剂流路侧的内径比所述第二通孔的所述基体侧的内径宽。
4.根据权利要求3所述的冷却器,其特征在于,所述固定部件为由头部和螺纹部构成的螺钉,
所述第二通孔的所述制冷剂流路侧设置有沟槽,以收容所述螺钉的所述头部,所述头部被配置为不突出到所述制冷剂流路。
5.根据权利要求2至4中任意一项所述的冷却器,其特征在于,在所述第二通孔与所述固定部件之间具备密封部件。
6.根据权利要求1所述的冷却器,其特征在于,在所述第二壁部的所述连接区域设置有壁厚比其他区域的壁厚薄的壁部。
7.根据权利要求1所述的冷却器,其特征在于,在所述第一壁部的制冷剂流路侧以不阻塞所述第一通孔的方式连接有多个散热片。
8.根据权利要求1所述的冷却器,其特征在于,所述盖形成为可从所述第一壁部自由装卸。
9.根据权利要求1所述的冷却器,其特征在于,所述盖设置为不突出到所述制冷剂流路。
10.根据权利要求1所述的冷却器,其特征在于,所述半导体模块固定在所述第一壁部的外侧,
所述第一壁部的厚度比所述第二壁部的厚度薄。
11.一种冷却器的固定方法,其将冷却半导体模块的冷却器固定在基体上,其特征在于,包含:
第一工序,准备冷却器,所述冷却器具备冷却器主体和盖,所述冷却器主体具备由第一壁部、第二壁部及侧壁部所围成的制冷剂流路,其中,所述第一壁部具有第一通孔,所述第二壁部与所述第一壁部对置配置,且在与所述第一通孔对置的位置上具备与所述基体连接的连接区域,所述侧壁部连接所述第一壁部的周围与所述第二壁部的周围;所述盖堵塞所述第一通孔;
第二工序,以与所述基体接触的方式定位所述第二壁部的外侧;
第三工序,通过所述第一通孔插入连接装置,将所述连接区域固定在所述基体上;
第四工序,利用所述盖堵塞所述第一通孔。
12.根据权利要求11所述的冷却器的固定方法,其特征在于,在所述第一工序中,作为所述冷却器,使用在所述第二壁部的所述连接区域具有第二通孔的冷却器,
在所述第三工序中,作为所述连接装置,使用大小为可通过所述第一通孔,被插入所述第二通孔,将所述冷却器主体固定在所述基体上的固定部件,在所述基体与所述连接区域接触的部分上设置固定用孔,通过所述第一通孔将所述固定部件插入所述冷却器内,进一步从所述冷却器的内侧插入所述第二通孔,并将其固定在所述基体的固定用孔中。
13.根据权利要求11所述的冷却器的固定方法,其特征在于,在所述第三工序中,作为所述连接装置使用焊接工具,通过所述第一通孔将所述焊接工具插入所述冷却器内,并将所述连接区域焊接固定在所述基体上。
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Families Citing this family (15)
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DE112015007145T5 (de) * | 2015-11-25 | 2018-08-30 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Invertervorrichtung und Automobil |
CN108738368B (zh) * | 2017-02-13 | 2022-06-17 | 新电元工业株式会社 | 电子设备 |
JP6885175B2 (ja) | 2017-04-14 | 2021-06-09 | 富士電機株式会社 | 半導体装置 |
JP7024258B2 (ja) * | 2017-08-29 | 2022-02-24 | 富士電機株式会社 | 半導体モジュール用の冷却器、栓部材、及びシステム |
JP7124425B2 (ja) * | 2018-05-02 | 2022-08-24 | 富士電機株式会社 | 冷却装置、半導体モジュールおよび車両 |
JP7159620B2 (ja) | 2018-05-30 | 2022-10-25 | 富士電機株式会社 | 半導体装置、冷却モジュール、電力変換装置及び電動車両 |
US10900412B2 (en) * | 2018-05-31 | 2021-01-26 | Borg Warner Inc. | Electronics assembly having a heat sink and an electrical insulator directly bonded to the heat sink |
JP7367394B2 (ja) * | 2018-11-22 | 2023-10-24 | 富士電機株式会社 | 半導体モジュール、車両および製造方法 |
DE102019105728B3 (de) * | 2019-03-07 | 2020-03-05 | Semikron Elektronik Gmbh & Co. Kg | Flüssigkeitskühlkörper mit einem Grundkörper und mit einem Metallkörper |
JP6750809B1 (ja) * | 2019-04-22 | 2020-09-02 | 三菱電機株式会社 | 冷却器 |
US11217502B2 (en) | 2019-11-06 | 2022-01-04 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages and methods of manufacturing the same |
JP7229195B2 (ja) * | 2020-03-10 | 2023-02-27 | 三菱電機株式会社 | 発熱素子冷却装置 |
CN216361033U (zh) * | 2020-05-11 | 2022-04-22 | 博格华纳公司 | 用于电致动涡轮增压器的电力耗散器组件 |
JP7431719B2 (ja) | 2020-12-21 | 2024-02-15 | 日本軽金属株式会社 | パワーデバイス用冷却器 |
US11576280B2 (en) | 2021-02-12 | 2023-02-07 | Raytheon Company | Cold plate branching flow pattern |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004146737A (ja) * | 2002-10-28 | 2004-05-20 | Mitsubishi Materials Corp | パワーモジュール用基板及びパワーモジュール |
CN101752356A (zh) * | 2008-11-28 | 2010-06-23 | 富士电机系统株式会社 | 半导体芯片冷却装置 |
JP2012222069A (ja) * | 2011-04-06 | 2012-11-12 | Mitsubishi Electric Corp | 半導体装置 |
JP2013084674A (ja) * | 2011-10-06 | 2013-05-09 | Shindengen Electric Mfg Co Ltd | 発熱電子デバイスの放熱構造 |
JP2014033095A (ja) * | 2012-08-03 | 2014-02-20 | Toyota Industries Corp | 半導体装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4402185A (en) * | 1982-01-07 | 1983-09-06 | Ncr Corporation | Thermoelectric (peltier effect) hot/cold socket for packaged I.C. microprobing |
US4871015A (en) * | 1988-07-13 | 1989-10-03 | United Technologies | Cooling arrangement |
US4938280A (en) * | 1988-11-07 | 1990-07-03 | Clark William E | Liquid-cooled, flat plate heat exchanger |
US5563447A (en) * | 1993-09-07 | 1996-10-08 | Delco Electronics Corp. | High power semiconductor switch module |
JPH08321570A (ja) | 1995-03-17 | 1996-12-03 | Nippondenso Co Ltd | 沸騰冷却装置 |
JP3496695B2 (ja) | 1995-07-04 | 2004-02-16 | 株式会社デンソー | 沸騰冷却装置およびその製造方法 |
US5640852A (en) * | 1995-10-06 | 1997-06-24 | Atlas; Boris | Compact thermal electric heat exchanger |
US6533589B1 (en) * | 1999-10-14 | 2003-03-18 | Ironwood Electronics, Inc. | Packaged device adapter assembly |
US6808015B2 (en) * | 2000-03-24 | 2004-10-26 | Denso Corporation | Boiling cooler for cooling heating element by heat transfer with boiling |
JP2002141450A (ja) | 2000-11-01 | 2002-05-17 | Denso Corp | 沸騰冷却装置 |
US20060245165A1 (en) * | 2005-04-29 | 2006-11-02 | Fang-Cheng Lin | Elastic secure device of a heat radiation module |
CN101443904B (zh) * | 2006-03-13 | 2010-11-10 | 株式会社丰田自动织机 | 功率模块用基体 |
JP2008235725A (ja) | 2007-03-23 | 2008-10-02 | Calsonic Kansei Corp | 水冷式ヒートシンク |
JP4485583B2 (ja) | 2008-07-24 | 2010-06-23 | トヨタ自動車株式会社 | 熱交換器及びその製造方法 |
US8542488B2 (en) * | 2009-01-29 | 2013-09-24 | Hewlett-Packard Development Company, L.P. | Cooling apparatus for an IC |
JP5813300B2 (ja) * | 2010-08-23 | 2015-11-17 | 三桜工業株式会社 | 冷却装置 |
US20120175094A1 (en) | 2011-01-10 | 2012-07-12 | Asetek A/S | Liquid Cooling System Cold Plate Assembly |
US8804331B2 (en) * | 2011-12-02 | 2014-08-12 | Ati Technologies Ulc | Portable computing device with thermal management |
WO2014020808A1 (ja) * | 2012-08-03 | 2014-02-06 | 富士電機株式会社 | 冷却構造体及び電力変換装置 |
JP6201532B2 (ja) * | 2013-08-30 | 2017-09-27 | 富士電機株式会社 | 半導体装置 |
-
2015
- 2015-04-23 EP EP15810584.1A patent/EP3076428B1/en active Active
- 2015-04-23 US US15/108,275 patent/US10319665B2/en active Active
- 2015-04-23 JP JP2016529144A patent/JP6315091B2/ja active Active
- 2015-04-23 CN CN201580003586.XA patent/CN105874592B/zh active Active
- 2015-04-23 WO PCT/JP2015/062411 patent/WO2015194259A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004146737A (ja) * | 2002-10-28 | 2004-05-20 | Mitsubishi Materials Corp | パワーモジュール用基板及びパワーモジュール |
CN101752356A (zh) * | 2008-11-28 | 2010-06-23 | 富士电机系统株式会社 | 半导体芯片冷却装置 |
JP2012222069A (ja) * | 2011-04-06 | 2012-11-12 | Mitsubishi Electric Corp | 半導体装置 |
JP2013084674A (ja) * | 2011-10-06 | 2013-05-09 | Shindengen Electric Mfg Co Ltd | 発熱電子デバイスの放熱構造 |
JP2014033095A (ja) * | 2012-08-03 | 2014-02-20 | Toyota Industries Corp | 半導体装置 |
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