CN105764993A - 含硅的热或光固化性组合物 - Google Patents
含硅的热或光固化性组合物 Download PDFInfo
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- CN105764993A CN105764993A CN201480057606.7A CN201480057606A CN105764993A CN 105764993 A CN105764993 A CN 105764993A CN 201480057606 A CN201480057606 A CN 201480057606A CN 105764993 A CN105764993 A CN 105764993A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
- C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Silicon Polymers (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
X | R1 | R2 | R3 | Y |
S | OC4H9 | H | H | BF4 |
S | OC4H9 | OCH3 | OCH3 | BF4 |
S | H | OCH3 | OCH3 | BF4 |
S | N(CH3)2 | H | H | CIO2 |
O | OC4H9 | H | H | SbF6 |
Claims (9)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-218485 | 2013-10-21 | ||
JP2013218485 | 2013-10-21 | ||
JP2014189852A JP6480691B2 (ja) | 2013-10-21 | 2014-09-18 | ケイ素含有熱または光硬化性組成物 |
JP2014-189852 | 2014-09-18 | ||
PCT/JP2014/077299 WO2015060155A1 (ja) | 2013-10-21 | 2014-10-14 | ケイ素含有熱または光硬化性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105764993A true CN105764993A (zh) | 2016-07-13 |
CN105764993B CN105764993B (zh) | 2019-04-09 |
Family
ID=52992755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480057606.7A Active CN105764993B (zh) | 2013-10-21 | 2014-10-14 | 含硅的热或光固化性组合物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9817312B2 (zh) |
EP (1) | EP3061792A4 (zh) |
JP (1) | JP6480691B2 (zh) |
KR (1) | KR101896232B1 (zh) |
CN (1) | CN105764993B (zh) |
IL (1) | IL244820B (zh) |
PH (1) | PH12016500639B1 (zh) |
TW (1) | TWI622623B (zh) |
WO (1) | WO2015060155A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109581812A (zh) * | 2017-09-28 | 2019-04-05 | Jsr株式会社 | 感放射线性树脂组合物、半导体元件、显示装置、硬化膜及其制造方法 |
CN110546566A (zh) * | 2017-04-28 | 2019-12-06 | 默克专利有限公司 | 正型感光性硅氧烷组合物以及使用其而形成的固化膜 |
CN110862690A (zh) * | 2019-10-12 | 2020-03-06 | 温州新意特种纸业有限公司 | 石墨烯压延膜的配方 |
CN111433257A (zh) * | 2017-12-01 | 2020-07-17 | 默克专利有限公司 | 聚硅氧烷、包含其的组合物以及使用了其的固化膜 |
CN112533707A (zh) * | 2018-05-14 | 2021-03-19 | Nbd纳米技术公司 | 有机硅烷涂布组合物 |
CN113166420A (zh) * | 2018-11-29 | 2021-07-23 | 默克专利有限公司 | 丙烯酸类聚合的聚硅氧烷、包含它的组合物以及使用它的固化膜 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101840219B1 (ko) | 2015-08-31 | 2018-03-20 | 삼성에스디아이 주식회사 | 저온 경화 조성물, 그로부터 형성된 경화막, 및 상기 경화막을 갖는 전자 장치 |
JP6603115B2 (ja) * | 2015-11-27 | 2019-11-06 | 信越化学工業株式会社 | ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
TWI707400B (zh) * | 2016-02-24 | 2020-10-11 | 日商日產化學工業股份有限公司 | 使用含矽組成物之半導體基板之平坦化方法 |
JP6672991B2 (ja) * | 2016-04-25 | 2020-03-25 | 信越化学工業株式会社 | 縮合硬化性樹脂組成物及び半導体装置 |
KR102465013B1 (ko) * | 2016-11-28 | 2022-11-09 | 메르크 파텐트 게엠베하 | 보호막을 구비하는 박막 트랜지스터 기판 및 이의 제조방법 |
JP2019061166A (ja) * | 2017-09-27 | 2019-04-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポジ型感光性シロキサン組成物およびこれを用いた硬化膜 |
JP2019120750A (ja) | 2017-12-28 | 2019-07-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 感光性シロキサン組成物およびこれを用いたパターン形成方法 |
KR102638142B1 (ko) * | 2018-08-22 | 2024-02-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 제조 방법 |
Citations (3)
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CN1698018A (zh) * | 2003-10-07 | 2005-11-16 | 日立化成工业株式会社 | 放射线固化性组合物、其保存方法、固化膜形成方法、图案形成方法、图案使用方法、电子部件及光波导 |
JP2010282031A (ja) * | 2009-05-01 | 2010-12-16 | Jsr Corp | ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン |
CN102667625A (zh) * | 2009-12-22 | 2012-09-12 | 东丽株式会社 | 正型感光性树脂组合物、由该组合物形成的固化膜及具有固化膜的元件 |
Family Cites Families (12)
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GB1058816A (en) * | 1963-08-01 | 1967-02-15 | Gen Electric | Improvements in silphenylene-containing polymers |
GB1119666A (en) * | 1965-08-06 | 1968-07-10 | Ici Ltd | Organosilicon polymers |
JP2002076203A (ja) | 2000-08-31 | 2002-03-15 | Hitachi Chem Co Ltd | ウエハレベルチップサイズパッケージ用の封止用成形材料及びウエハレベルチップサイズパッケージ |
JP4540961B2 (ja) | 2003-10-10 | 2010-09-08 | Azエレクトロニックマテリアルズ株式会社 | エッチングストッパー層形成用組成物 |
JP4860953B2 (ja) | 2005-07-08 | 2012-01-25 | 富士通株式会社 | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
EP2034364A4 (en) * | 2006-06-27 | 2010-12-01 | Jsr Corp | METHOD FOR FORMING A STRUCTURE AND COMPOSITION FOR FORMING AN ORGANIC THIN FILM FOR USE THEREOF |
US8026035B2 (en) * | 2007-03-30 | 2011-09-27 | Cheil Industries, Inc. | Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same |
US20100178620A1 (en) * | 2007-05-21 | 2010-07-15 | Jsr Corporation | Inverted pattern forming method and resin composition |
JP5003279B2 (ja) * | 2007-05-21 | 2012-08-15 | Jsr株式会社 | 反転パターン形成方法 |
JP5696428B2 (ja) * | 2009-10-30 | 2015-04-08 | Jsr株式会社 | 反転パターン形成方法及びポリシロキサン樹脂組成物 |
JP5518772B2 (ja) | 2011-03-15 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法 |
CN103959168B (zh) * | 2011-11-29 | 2017-07-04 | 默克专利有限公司 | 负型感光性硅氧烷组合物 |
-
2014
- 2014-09-18 JP JP2014189852A patent/JP6480691B2/ja active Active
- 2014-10-14 CN CN201480057606.7A patent/CN105764993B/zh active Active
- 2014-10-14 US US15/031,668 patent/US9817312B2/en active Active
- 2014-10-14 KR KR1020167013434A patent/KR101896232B1/ko active IP Right Grant
- 2014-10-14 WO PCT/JP2014/077299 patent/WO2015060155A1/ja active Application Filing
- 2014-10-14 EP EP14855914.9A patent/EP3061792A4/en not_active Withdrawn
- 2014-10-20 TW TW103136094A patent/TWI622623B/zh active
-
2016
- 2016-03-29 IL IL244820A patent/IL244820B/en not_active IP Right Cessation
- 2016-04-07 PH PH12016500639A patent/PH12016500639B1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1698018A (zh) * | 2003-10-07 | 2005-11-16 | 日立化成工业株式会社 | 放射线固化性组合物、其保存方法、固化膜形成方法、图案形成方法、图案使用方法、电子部件及光波导 |
JP2010282031A (ja) * | 2009-05-01 | 2010-12-16 | Jsr Corp | ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン |
CN102667625A (zh) * | 2009-12-22 | 2012-09-12 | 东丽株式会社 | 正型感光性树脂组合物、由该组合物形成的固化膜及具有固化膜的元件 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110546566A (zh) * | 2017-04-28 | 2019-12-06 | 默克专利有限公司 | 正型感光性硅氧烷组合物以及使用其而形成的固化膜 |
CN110546566B (zh) * | 2017-04-28 | 2024-02-09 | 默克专利有限公司 | 正型感光性硅氧烷组合物以及使用其而形成的固化膜 |
CN109581812A (zh) * | 2017-09-28 | 2019-04-05 | Jsr株式会社 | 感放射线性树脂组合物、半导体元件、显示装置、硬化膜及其制造方法 |
CN111433257A (zh) * | 2017-12-01 | 2020-07-17 | 默克专利有限公司 | 聚硅氧烷、包含其的组合物以及使用了其的固化膜 |
US11866553B2 (en) | 2017-12-01 | 2024-01-09 | Merck Patent Gmbh | Polysiloxane, composition comprising the same and cured film using the same |
CN112533707A (zh) * | 2018-05-14 | 2021-03-19 | Nbd纳米技术公司 | 有机硅烷涂布组合物 |
CN112533707B (zh) * | 2018-05-14 | 2023-09-05 | Nbd纳米技术公司 | 有机硅烷涂布组合物 |
CN113166420A (zh) * | 2018-11-29 | 2021-07-23 | 默克专利有限公司 | 丙烯酸类聚合的聚硅氧烷、包含它的组合物以及使用它的固化膜 |
CN113166420B (zh) * | 2018-11-29 | 2023-06-23 | 默克专利有限公司 | 丙烯酸类聚合的聚硅氧烷、包含它的组合物以及使用它的固化膜 |
CN110862690A (zh) * | 2019-10-12 | 2020-03-06 | 温州新意特种纸业有限公司 | 石墨烯压延膜的配方 |
Also Published As
Publication number | Publication date |
---|---|
KR20160076538A (ko) | 2016-06-30 |
EP3061792A4 (en) | 2017-08-02 |
JP6480691B2 (ja) | 2019-03-13 |
JP2015108116A (ja) | 2015-06-11 |
CN105764993B (zh) | 2019-04-09 |
TW201527433A (zh) | 2015-07-16 |
EP3061792A1 (en) | 2016-08-31 |
TWI622623B (zh) | 2018-05-01 |
PH12016500639A1 (en) | 2016-05-30 |
KR101896232B1 (ko) | 2018-09-10 |
US20160266490A1 (en) | 2016-09-15 |
IL244820A0 (en) | 2016-05-31 |
WO2015060155A1 (ja) | 2015-04-30 |
IL244820B (en) | 2019-06-30 |
US9817312B2 (en) | 2017-11-14 |
PH12016500639B1 (en) | 2016-05-30 |
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