CN105720067B9 - 固态图像拾取设备 - Google Patents

固态图像拾取设备 Download PDF

Info

Publication number
CN105720067B9
CN105720067B9 CN201610164142.0A CN201610164142A CN105720067B9 CN 105720067 B9 CN105720067 B9 CN 105720067B9 CN 201610164142 A CN201610164142 A CN 201610164142A CN 105720067 B9 CN105720067 B9 CN 105720067B9
Authority
CN
China
Prior art keywords
film
substrate
insulating film
conductive material
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610164142.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN105720067A (zh
CN105720067B (zh
Inventor
下津佐峰生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kato Corp
Original Assignee
Kato Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kato Corp filed Critical Kato Corp
Publication of CN105720067A publication Critical patent/CN105720067A/zh
Publication of CN105720067B publication Critical patent/CN105720067B/zh
Application granted granted Critical
Publication of CN105720067B9 publication Critical patent/CN105720067B9/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201610164142.0A 2010-07-09 2011-07-04 固态图像拾取设备 Active CN105720067B9 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-156926 2010-07-09
JP2010156926A JP5451547B2 (ja) 2010-07-09 2010-07-09 固体撮像装置
CN201180033415.3A CN102971851B (zh) 2010-07-09 2011-07-04 固态图像拾取设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180033415.3A Division CN102971851B (zh) 2010-07-09 2011-07-04 固态图像拾取设备

Publications (3)

Publication Number Publication Date
CN105720067A CN105720067A (zh) 2016-06-29
CN105720067B CN105720067B (zh) 2019-10-01
CN105720067B9 true CN105720067B9 (zh) 2019-11-19

Family

ID=45440958

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610164142.0A Active CN105720067B9 (zh) 2010-07-09 2011-07-04 固态图像拾取设备
CN201180033415.3A Active CN102971851B (zh) 2010-07-09 2011-07-04 固态图像拾取设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180033415.3A Active CN102971851B (zh) 2010-07-09 2011-07-04 固态图像拾取设备

Country Status (6)

Country Link
US (10) US9166090B2 (https=)
EP (3) EP4428912A3 (https=)
JP (1) JP5451547B2 (https=)
CN (2) CN105720067B9 (https=)
RU (1) RU2521224C1 (https=)
WO (1) WO2012004965A1 (https=)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3514831B1 (en) 2009-12-26 2021-10-13 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system
JP5517800B2 (ja) * 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
JP5451547B2 (ja) 2010-07-09 2014-03-26 キヤノン株式会社 固体撮像装置
TWI495041B (zh) * 2011-07-05 2015-08-01 新力股份有限公司 半導體裝置、用於半導體裝置之製造方法及電子設備
US8896125B2 (en) 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
JP5994274B2 (ja) * 2012-02-14 2016-09-21 ソニー株式会社 半導体装置、半導体装置の製造方法、及び、電子機器
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
KR101240537B1 (ko) * 2012-05-07 2013-03-11 (주)실리콘화일 이종접합 구조의 칩 적층 이미지센서 및 그 제조방법
JP6012262B2 (ja) 2012-05-31 2016-10-25 キヤノン株式会社 半導体装置の製造方法
US8796805B2 (en) * 2012-09-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metal film stack in BSI chips
US8866250B2 (en) * 2012-09-05 2014-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metal film stack in BSI chips
TWI595637B (zh) 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6128787B2 (ja) * 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
JP6017297B2 (ja) * 2012-12-14 2016-10-26 オリンパス株式会社 半導体装置の製造方法
KR102136845B1 (ko) 2013-09-16 2020-07-23 삼성전자 주식회사 적층형 이미지 센서 및 그 제조방법
WO2015040798A1 (ja) 2013-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
TWI676279B (zh) * 2013-10-04 2019-11-01 新力股份有限公司 半導體裝置及固體攝像元件
CN104810366B (zh) * 2014-01-26 2018-09-11 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104241200B (zh) * 2014-08-28 2017-03-08 武汉新芯集成电路制造有限公司 一种功率器件与控制器件的集成方法
CN104241201B (zh) * 2014-08-28 2017-05-31 武汉新芯集成电路制造有限公司 一种集成功率器件与控制器件的方法
US10285088B2 (en) * 2014-09-26 2019-05-07 Nokia Technologies Oy Methods and apparatus for minimization of drive testing
CN104599988B (zh) * 2015-01-05 2017-08-04 武汉新芯集成电路制造有限公司 集成功率器件与控制器件的方法
US10354975B2 (en) * 2016-05-16 2019-07-16 Raytheon Company Barrier layer for interconnects in 3D integrated device
US10431614B2 (en) 2017-02-01 2019-10-01 Semiconductor Components Industries, Llc Edge seals for semiconductor packages
US11411036B2 (en) * 2017-04-04 2022-08-09 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP2018195656A (ja) 2017-05-16 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 半導体装置の製造方法及び半導体装置
WO2019017147A1 (ja) * 2017-07-18 2019-01-24 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法
FR3069371B1 (fr) * 2017-07-19 2019-08-30 Stmicroelectronics (Crolles 2) Sas Dispositif electronique capteur d'images
US10727217B2 (en) 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device that uses bonding layer to join semiconductor substrates together
US10879115B2 (en) * 2017-11-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
KR102491881B1 (ko) * 2018-01-16 2023-01-27 삼성디스플레이 주식회사 디스플레이 장치
KR20260016606A (ko) * 2018-02-01 2026-02-03 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 그 제조 방법, 및 전자 기기
JP2019140178A (ja) * 2018-02-07 2019-08-22 東芝メモリ株式会社 半導体装置
JP7353729B2 (ja) * 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
JP6952629B2 (ja) * 2018-03-20 2021-10-20 株式会社東芝 半導体装置
KR102524998B1 (ko) * 2018-09-13 2023-04-24 주식회사 디비하이텍 후면 조사형 이미지 센서 및 그 제조 방법
JP2020043298A (ja) * 2018-09-13 2020-03-19 キヤノン株式会社 半導体装置、その製造方法および電子機器
WO2020116040A1 (ja) 2018-12-04 2020-06-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
JP7551277B2 (ja) * 2019-01-31 2024-09-17 キヤノン株式会社 半導体装置、機器
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
US10840185B2 (en) * 2019-03-05 2020-11-17 Texas Instruments Incorporated Semiconductor device with vias having a zinc-second metal-copper composite layer
JP7297516B2 (ja) * 2019-04-25 2023-06-26 キヤノン株式会社 半導体装置および機器
JP7679169B2 (ja) * 2019-08-08 2025-05-19 キヤノン株式会社 光電変換装置、光電変換システム
US11302736B2 (en) * 2019-08-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP2021034560A (ja) * 2019-08-23 2021-03-01 キオクシア株式会社 半導体装置およびその製造方法
KR102780353B1 (ko) 2019-08-26 2025-03-12 삼성전자주식회사 반도체 장치 및 그 제조방법
JP7417393B2 (ja) * 2019-09-27 2024-01-18 キヤノン株式会社 半導体装置及び半導体ウエハ
JP7353121B2 (ja) * 2019-10-08 2023-09-29 キヤノン株式会社 半導体装置および機器
JP7603382B2 (ja) * 2019-11-18 2024-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP7618392B2 (ja) 2020-05-14 2025-01-21 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP2022018705A (ja) 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置
KR102823325B1 (ko) * 2020-07-20 2025-06-23 에스케이하이닉스 주식회사 보호 소자를 갖는 이미지 센싱 장치
US12550799B2 (en) * 2021-03-31 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
WO2025240564A1 (en) * 2024-05-17 2025-11-20 Micron Technology, Inc. Self-aligned patterning on package substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100530667C (zh) * 2004-12-30 2009-08-19 科洛司科技有限公司 具有放大的光检测区域的图像传感器及其制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168965B1 (en) * 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
US6455425B1 (en) * 2000-01-18 2002-09-24 Advanced Micro Devices, Inc. Selective deposition process for passivating top interface of damascene-type Cu interconnect lines
US6642081B1 (en) * 2002-04-11 2003-11-04 Robert Patti Interlocking conductor method for bonding wafers to produce stacked integrated circuits
JP4432502B2 (ja) * 2004-01-20 2010-03-17 ソニー株式会社 半導体装置
DE202004005607U1 (de) 2004-04-06 2004-06-09 Ulamo Holding B.V. Befestigungsvorrichtung für eine Frontplatte
KR100782463B1 (ko) * 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
JP4533367B2 (ja) * 2005-11-18 2010-09-01 キヤノン株式会社 固体撮像装置
JP5162869B2 (ja) * 2006-09-20 2013-03-13 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP2008277511A (ja) * 2007-04-27 2008-11-13 Fujifilm Corp 撮像素子及び撮像装置
US7960768B2 (en) * 2008-01-17 2011-06-14 Aptina Imaging Corporation 3D backside illuminated image sensor with multiplexed pixel structure
JP2010067844A (ja) 2008-09-11 2010-03-25 Omron Corp 固体撮像素子の製造方法
JP2010156926A (ja) 2009-01-05 2010-07-15 Sharp Corp 表示装置、及びテレビ受信装置
JP5187284B2 (ja) 2009-06-26 2013-04-24 ソニー株式会社 半導体装置の製造方法
EP3514831B1 (en) * 2009-12-26 2021-10-13 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system
JP5451547B2 (ja) * 2010-07-09 2014-03-26 キヤノン株式会社 固体撮像装置
CN103022062B (zh) * 2011-07-19 2016-12-21 索尼公司 固体摄像器件及其制造方法和电子设备
TWI577001B (zh) * 2011-10-04 2017-04-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2014203961A (ja) * 2013-04-04 2014-10-27 ソニー株式会社 固体撮像装置およびその製造方法、ならびに電子機器
JP2022018705A (ja) * 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100530667C (zh) * 2004-12-30 2009-08-19 科洛司科技有限公司 具有放大的光检测区域的图像传感器及其制造方法

Also Published As

Publication number Publication date
US20220037390A1 (en) 2022-02-03
US20240387592A1 (en) 2024-11-21
CN105720067A (zh) 2016-06-29
US9166090B2 (en) 2015-10-20
US20130112849A1 (en) 2013-05-09
US12068351B2 (en) 2024-08-20
US20200168654A1 (en) 2020-05-28
EP2591505A4 (en) 2014-04-16
US9419030B2 (en) 2016-08-16
CN105720067B (zh) 2019-10-01
WO2012004965A1 (en) 2012-01-12
JP2012019147A (ja) 2012-01-26
CN102971851A (zh) 2013-03-13
EP3706172A1 (en) 2020-09-09
US20160005776A1 (en) 2016-01-07
US11177310B2 (en) 2021-11-16
US9640581B2 (en) 2017-05-02
US20190148446A1 (en) 2019-05-16
US10573680B2 (en) 2020-02-25
EP2591505A1 (en) 2013-05-15
US20180166494A1 (en) 2018-06-14
JP5451547B2 (ja) 2014-03-26
RU2521224C1 (ru) 2014-06-27
EP4428912A3 (en) 2024-11-13
EP3706172B1 (en) 2024-09-11
US20170186803A1 (en) 2017-06-29
US9929202B2 (en) 2018-03-27
CN102971851B (zh) 2016-04-06
US10217786B2 (en) 2019-02-26
US20230299112A1 (en) 2023-09-21
US20160322415A1 (en) 2016-11-03
EP4428912A2 (en) 2024-09-11

Similar Documents

Publication Publication Date Title
CN105720067B9 (zh) 固态图像拾取设备
US12142629B2 (en) Member for solid-state image pickup device and method for manufacturing solid-state image pickup device
JP7309670B2 (ja) 固体撮像装置
JP2023055816A (ja) 固体撮像装置および固体撮像装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CI03 Correction of invention patent

Correction item: Claims

Correct: Correct

False: error

Number: 40-01

Page: full text

Volume: 35

CI03 Correction of invention patent