CN105549269A - 配向膜厚度均一性的优化方法及液晶显示面板 - Google Patents

配向膜厚度均一性的优化方法及液晶显示面板 Download PDF

Info

Publication number
CN105549269A
CN105549269A CN201610091187.XA CN201610091187A CN105549269A CN 105549269 A CN105549269 A CN 105549269A CN 201610091187 A CN201610091187 A CN 201610091187A CN 105549269 A CN105549269 A CN 105549269A
Authority
CN
China
Prior art keywords
area
photoresistance
passivation layer
layer
optimization method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610091187.XA
Other languages
English (en)
Inventor
豆婷
李强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201610091187.XA priority Critical patent/CN105549269A/zh
Publication of CN105549269A publication Critical patent/CN105549269A/zh
Priority to US15/128,968 priority patent/US20180120601A1/en
Priority to PCT/CN2016/089745 priority patent/WO2017140083A1/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133792—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明涉及一种配向膜厚度均一性的优化方法，包括以下步骤：提供沉积有钝化层的薄膜晶体管阵列基板；在钝化层上涂布光阻；将薄膜晶体管阵列基板划分为不同区域，对处于不同区域的光阻分别进行半色调掩膜曝光和普通掩膜曝光、显影、刻蚀；刻蚀后，去除光阻、沉积ITO膜层；对ITO膜层进行刻蚀，得到ITO膜层上表面与钝化层上表面处于同一平面的薄膜晶体管阵列基板；在ITO膜层上表面和钝化层上表面涂布配向膜。由于ITO膜层上表面与钝化层上表面处于同一平面，使得涂布在其上方的整面配向膜厚度均一，因而有助于提高液晶显示面板的显示品质。

Description

配向膜厚度均一性的优化方法及液晶显示面板
技术领域
本发明涉及液晶显示技术领域，具体是一种配向膜厚度均一性的优化方法以及利用该优化方法得到的液晶显示面板。
背景技术
随着触控技术和显示技术的发展，触控显示面板已经被广泛应用于智能手机、平板电脑等智能电子产品中，为人机交互带来更便捷地体验。
通常地，液晶显示面板的主要结构包括彩膜基板(CF，ColorFilter)、薄膜晶体管阵列基板(TFTArraySubstrate，ThinFilmTransistorArraySubstrate)、设置在彩膜基板和薄膜晶体管阵列基板之间的液晶层(LiquidCrystalLayer)和间隔物(PS，PhotoSpacer)、以及密封胶框(Sealant)。其中，在彩膜基板的下表面、薄膜晶体管阵列基板的上表面均涂布了一层配向膜(PI)，作用是使液晶分子按照一定的方向和角度排列，因此配向膜对于液晶显示面板而言是必不可少的，而且配向膜的厚度是否均一会对液晶显示面板的光学品质产生一定影响。
如图1所示，在薄膜晶体管阵列基板2一侧的钝化层100(PV，Passivation)上设有用于控制液晶盒内液晶产生偏转的透明ITO膜层500，结合图2可知，该ITO膜层并不是沉积在钝化层上的一整面图层，而是通过刻蚀工艺得到的图案化图形，因此才会有如图1所示的同一ITO膜层500并不是连续设置，而是之间有一定间隔。故在薄膜晶体管阵列基板2上表面涂布整面配向膜600时，部分配向膜是覆盖在ITO膜层上的，同时也有部分配向膜是覆盖在处于ITO膜层间隔处的钝化层100上的，这就导致了配向膜的厚度不一致的问题。
如图3所示，涂布于非ITO层区域(即涂布于钝化层100)上的配向膜600厚度为H1，涂布于ITO膜层500上的配向膜600厚度为H2，二者之间的差值△H＝H1-H2，该差值可称为配向膜厚度的断差(即涂布于ITO层上的配向膜厚度与涂布于非ITO层区域上的配向膜厚度之差)。配向膜的断差主要是受到ITO层厚度的影响，ITO层厚度导致了配向膜在不同区域有不同的厚度。图4(a)-1至(a)-3中，ITO膜层的厚度依次为和图4(b)-1至(b)-3是在图4(a)-1至(a)-3中ITO膜层上涂布配向膜后，产生断差的示意图。从这些图的对比可以看出，ITO膜层的厚度越大，配向膜的断差△H越大。考虑到配向膜在液晶显示面板中所起到的作用可知，配向膜的厚度一致性对于液晶显示面板的显示效果有着重要影响，因此实有必要对现有相关技术进行改进和优化以解决上述结构中存在的配向膜厚度不一致、出现断差的问题。
发明内容
为克服现有技术的不足，本发明的目的在于提供一种。
本发明提供一种配向膜厚度均一性的优化方法，所述配向膜用于液晶显示面板，所述优化方法包括以下步骤：
提供沉积有钝化层的薄膜晶体管阵列基板；在所述钝化层上涂布光阻；将所述薄膜晶体管阵列基板划分为不同区域，对处于不同区域的光阻分别进行半色调掩膜曝光和普通掩膜曝光；对进行半色调掩膜曝光和普通掩膜曝光后的所述光阻进行显影；对显影后的所述光阻和钝化层进行刻蚀；刻蚀后，去除所述光阻；去除所述光阻后，沉积ITO膜层；对所述ITO膜层进行刻蚀，得到ITO膜层上表面与钝化层上表面处于同一平面的薄膜晶体管阵列基板；在所述ITO膜层上表面和所述钝化层上表面涂布配向膜。
作为一种实施方式，在本发明所述优化方法中，将所述薄膜晶体管阵列基板划分为不同区域，对处于不同区域的光阻分别进行半色调掩膜曝光和普通掩膜曝光是将所述薄膜晶体管阵列基板划分为第一区域和第二区域，对处于第一区域的所述光阻进行半色调掩膜曝光，对处于第二区域的所述光阻进行普通掩膜曝光。进一步地，对处于第一区域的所述光阻进行半色调掩膜曝光是采用半色调掩膜对第一区域的所述光阻进行不完全曝光，第一区域将对应形成ITO膜层，对处于第二区域的所述光阻进行普通掩膜曝光是采用普通掩膜对第二区域的所述光阻进行完全曝光，第二区域将对应形成接触孔。作为一种实施方式，在本发明所述优化方法中，对进行半色调掩膜曝光和普通掩膜曝光后的所述光阻进行显影后，使处于所述第一区域的光阻形成若干间隔设置的凹槽，所述第二区域内形成贯穿于所述光阻的开孔。
进一步地，对显影后的所述光阻和钝化层进行刻蚀是对处于第一区域的光阻及其下方的钝化层进行刻蚀，使处于第一区域的所述钝化层形成若干间隔设置的凹槽，同时对所述第二区域的所述钝化层进行刻蚀，形成贯穿于所述第二区域的钝化层的接触孔。
进一步地，刻蚀后去除所述光阻是采用有机溶液除去所述钝化层上的全部所述光阻。
进一步地，去除所述光阻后沉积ITO膜层是在钝化层的上表面沉积形成ITO膜层。
作为一种实施方式，在本发明所述优化方法中，对所述ITO膜层进行刻蚀，得到处于所述第一区域中的所述ITO膜层上表面与处于所述第一区域中的所述钝化层上表面处于同一平面的薄膜晶体管阵列基板。
进一步地，所述配向膜整面涂布在所述ITO膜层上表面和所述钝化层上表面，使所述配向膜上表面为平面。
进一步地，处于所述第一区域内的所述配向膜下表面为平面。
优选地，所述钝化层的材料为SiNx。
一种采用上述优化工艺方法得到的液晶显示面板，包括相对设置的彩膜基板和薄膜晶体管阵列基板、以及设置于所述彩膜基板和所述薄膜晶体管阵列基板之间的液晶层；其中，在所述薄膜晶体管阵列基板上表面依次设有钝化层和ITO膜层，且所述钝化层的上表面与所述ITO膜层的上表面处于同一平面，在所述钝化层上表面和所述ITO膜层上表面涂布有配向膜。
与现有技术相比，本发明的有益效果如下：
在本发明中，通过利用半色调掩膜工艺实现ITO膜层与钝化层的上表面处于同一平面的效果，从而使配向膜整面涂布在相应位置ITO膜层与钝化层呢个上表面时，其厚度一致、均一性良好，不会出现因ITO膜层与钝化层之间有断差而导致配向膜厚度出现断差的问题。此外，本发明的优化方法并未增加其它的制程过程，从而在保证工艺步骤不繁琐复杂的同时，使配向膜厚度均一性得到优化，进而有助于提高液晶显示面板的显示品质。
附图说明
图1是现有技术中液晶显示面板的剖面结构示意图。
图2是现有技术中薄膜晶体管阵列基板一侧设置ITO膜层的分布示意图。
图3是图1中A处的局部放大示意图。
图4(a)-1至(a)-3是现有技术中在钝化层上设置不同厚度ITO膜层的示意图。
图4(b)-1至(b)-3是在图4(a)-1至(a)-3中不同厚度ITO膜层上涂布配向膜后产生断差的示意图。
图5至图13是本发明实施例一配向膜厚度均一性优化方法的工艺流程。
图14是本发明实施例二液晶显示面板的结构示意图。
具体实施方式
实施例一
本实施例提供一种配向膜厚度均一性的优化方法，所述配向膜用于薄膜晶体管阵列基板，所述优化方法包括以下步骤：
如图5所示，提供一沉积有钝化层100的薄膜晶体管阵列基板(图未示)，该钝化层的材料为SiNx。
如图6所示，在该钝化层100上涂布光阻200。
对光阻的不同区域分别进行半色调掩膜曝光和普通掩膜曝光，具体为：如图7所示，将薄膜晶体管阵列基板划分为第一区域91和第二区域92，使用半色调掩膜对处于第一区域91的光阻200进行不完全曝光，该第一区域将对应形成ITO膜层；使用普通光罩对处于第二区域92的光阻200进行完全曝光，该第二区域将对应形成接触孔以及形成于接触孔中的ITO膜层。
如图8所示，对进行半色调掩膜曝光和普通掩膜曝光后的光阻进行显影，具体为：对第一区域91进行显影，由于该第一区域91为不完全曝光，因此显影后使该第一区域仅除去部分光阻，从而使处于第一区域的光阻朝向自身内部凹陷形成若干间隔设置的凹槽；对第二区域92进行显影，由于对第二区域92为完全曝光，因此显影后该第二区域的光阻全部被除去，从而使第二区域形成贯穿光阻的开孔。
接着，对显影后的光阻和钝化层进行刻蚀，该刻蚀过程是一个连续的过程，图9(a)所示为刻蚀工艺过程中的光阻和钝化层的刻蚀状态，图9(b)所示为刻蚀工艺完成后光阻和钝化层的结构示意图，从而清楚地显示刻蚀工艺过程中光阻和钝化层的变化状态。
具体为：对处于第一区域91的光阻200及其下方的钝化层100进行刻蚀。首先，由于形成有若干凹槽，使得位于凹槽下方的光阻较其它位置的光阻更薄，因此如图9(a)所示，该部分光阻最先被刻蚀掉，使处于第一区域中的部分钝化层暴露，与此同时其它位置的光阻也随着刻蚀工艺过程的进行而被刻蚀、变薄；然后，随着刻蚀的进行，如图9(b)所示，部分已经暴露的钝化层会继续被刻蚀，刻蚀刻蚀使钝化层上表面朝向自身内部凹陷形成若干间隔设置的凹槽300，与此同时处于第一区域内的光阻随着刻蚀工艺的进行会继续被刻蚀、变得更薄。
由于第二区域92在显影后形成贯穿光阻的开孔，使位于该第二区域92光阻下方的钝化层部分暴露，因此对显影后的第二区域进行刻蚀时，实际上是对处于第二区域92中部分暴露的钝化层100进行刻蚀刻蚀，刻蚀后形成贯穿于钝化层100的接触孔400，该接触孔用于使漏极与ITO膜层相接触；与此同时，处于第二区域内的光阻也随着刻蚀工艺的进行而被刻蚀、不断变薄。
如图10所示，使用有机溶液将光阻除去；实际上，本步骤的目的在于将光阻除去即可，因此除了使用有机溶液作为光阻去除液，还可以采用其它现有技术中常见的处理方法，例如采用等离子处理技术使光阻灰化，进而将光阻除去。
如图11所示，在除去光阻后的钝化层上沉积形成ITO膜层500，使钝化层的上表面、凹槽、开孔中均沉积有ITO膜层。
如图12所示，采用黄光制程对ITO膜层500进行刻蚀，除去位于钝化层上表面的ITO膜层，保留位于钝化层的凹槽300中的ITO膜层，使位于第一区域91的钝化层100上表面与ITO膜层500上表面处于同一水平面上。
如图13所示，在上述已经完成刻蚀的ITO膜层500表面、部分暴露的钝化层100表面涂布一整面的配向膜600，该配向膜600的上表面为平面。由于在第一区域中的钝化层上表面与ITO膜层上表面处于同一水平面，因此在该第一区域内涂布配向膜时，配向膜的下表面也是平整的平面，由此保证了配向膜的厚度均一性。
在本实施例的优化方法中，利用半色调掩膜工艺实现ITO膜层与钝化层的上表面处于同一平面的效果，使得配向膜在涂布时，厚度均一性良好，不会出现因ITO膜层与钝化层之间的断差而导致配向膜厚度出现断差的问题。此外，该优化方法中并未增加其它的工艺步骤，从而在保证了工艺流程并未复杂化的前提下，得到了厚度均一性良好的配向膜。
实施例二
本实施例提供一种利用上述优化方法制得的液晶显示面板，如图14所示，液晶显示面板包括相对设置的彩膜基板1和薄膜晶体管阵列基板2、以及设置于彩膜基板和薄膜晶体管阵列基板之间的液晶层3。
其中，在彩膜基板1的下表面设有彩膜基板ITO膜层700和彩膜基板配向膜800；在薄膜晶体管阵列基板2上表面依次设有钝化层100和ITO膜层500，薄膜晶体管阵列基板可划分为位于右侧的第一区域91和位于左侧的第二区域92，在第二区域92中形成有贯穿于钝化层的接触孔400，位于该第二区域内的ITO膜层500沉积在接触孔400上，从而使ITO膜层与漏极(图未示)相接触；
在第一区域91中设有朝向钝化层100自身内部凹陷的若干间隔的凹槽300，位于该第一区域内的ITO膜层500设置在这些凹槽300中，且在第一区域91的钝化层100上表面与ITO膜层500上表面持平，二者处于同一水平面。在第一区域91的钝化层100和ITO膜层500上表面还涂布有配向膜600。该配向膜的上表面为平面，由于位于第一区域内的ITO膜层上表面与钝化层上表面处于同一水平面，故该配向膜位于第一区域内的下表面也为平面。
可以理解的是，以上仅对薄膜晶体管阵列基板以及液晶显示面板的主体结构进行了说明，薄膜晶体管阵列基板以及液晶显示面板还可以包括其它常规的功能结构，在本发明中不再一一赘述。
以上所述为本发明的具体实施方式，其目的是为了清楚说明本发明而作的举例，并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (10)

1.一种配向膜厚度均一性的优化方法，所述配向膜用于液晶显示面板，其特征在于：所述优化方法包括以下步骤：
提供沉积有钝化层的薄膜晶体管阵列基板；在所述钝化层上涂布光阻；将所述薄膜晶体管阵列基板划分为不同区域，对处于不同区域的光阻分别进行半色调掩膜曝光和普通掩膜曝光；对进行半色调掩膜曝光和普通掩膜曝光后的所述光阻进行显影；对显影后的所述光阻和钝化层进行刻蚀；刻蚀后，去除所述光阻；去除所述光阻后，沉积ITO膜层；对所述ITO膜层进行刻蚀，得到ITO膜层上表面与钝化层上表面处于同一平面的薄膜晶体管阵列基板；在所述ITO膜层上表面和所述钝化层上表面涂布配向膜。
2.如权利要求1所述的优化方法，其特征在于：将所述薄膜晶体管阵列基板划分为不同区域，对处于不同区域的光阻分别进行半色调掩膜曝光和普通掩膜曝光是将所述薄膜晶体管阵列基板划分为第一区域和第二区域，对处于第一区域的所述光阻进行半色调掩膜曝光，对处于第二区域的所述光阻进行普通掩膜曝光。
3.如权利要求2所述的优化方法，其特征在于：对处于第一区域的所述光阻进行半色调掩膜曝光是采用半色调掩膜对第一区域的所述光阻进行不完全曝光，第一区域将对应形成ITO膜层，对处于第二区域的所述光阻进行普通掩膜曝光是采用普通掩膜对第二区域的所述光阻进行完全曝光，第二区域将对应形成接触孔。
4.如权利要求3所述的优化方法，其特征在于：对进行半色调掩膜曝光和普通掩膜曝光后的所述光阻进行显影后，使处于所述第一区域的光阻形成若干间隔设置的凹槽，所述第二区域内形成贯穿于所述光阻的开孔。
5.如权利要求4所述的优化方法，其特征在于：对显影后的所述光阻和钝化层进行刻蚀是对处于第一区域的光阻及其下方的钝化层进行刻蚀，使处于第一区域的所述钝化层形成若干间隔设置的凹槽，同时对第二区域的所述钝化层进行刻蚀，形成贯穿于第二区域的所述钝化层的接触孔。
6.如权利要求2-4任一项所述的优化方法，其特征在于：对所述ITO膜层进行刻蚀，得到处于所述第一区域中的所述ITO膜层上表面与处于所述第一区域中的所述钝化层上表面处于同一平面的薄膜晶体管阵列基板。
7.如权利要求6所述的优化方法，其特征在于：处于所述第一区域内的所述配向膜下表面为平面。
8.如权利要求1-4任一项所述的优化方法，其特征在于：去除所述光阻后沉积ITO膜层是在钝化层的上表面沉积形成ITO膜层。
9.如权利要求1-4任一项所述的优化方法，其特征在于：所述配向膜整面涂布在所述ITO膜层上表面和所述钝化层上表面，使所述配向膜上表面为平面。
10.一种液晶显示面板，所述液晶显示面板包括相对设置的彩膜基板和薄膜晶体管阵列基板、以及设置于所述彩膜基板和所述薄膜晶体管阵列基板之间的液晶层；其特征在于：在所述薄膜晶体管阵列基板上表面依次设有钝化层和ITO膜层，且所述钝化层的上表面与所述ITO膜层的上表面处于同一平面，在所述钝化层上表面和所述ITO膜层上表面涂布有配向膜。
CN201610091187.XA 2016-02-18 2016-02-18 配向膜厚度均一性的优化方法及液晶显示面板 Pending CN105549269A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610091187.XA CN105549269A (zh) 2016-02-18 2016-02-18 配向膜厚度均一性的优化方法及液晶显示面板
US15/128,968 US20180120601A1 (en) 2016-02-18 2016-07-12 Optimization method of thickness uniformity of alignment film and liquid crystal display panel
PCT/CN2016/089745 WO2017140083A1 (zh) 2016-02-18 2016-07-12 配向膜厚度均一性的优化方法及液晶显示面板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610091187.XA CN105549269A (zh) 2016-02-18 2016-02-18 配向膜厚度均一性的优化方法及液晶显示面板

Publications (1)

Publication Number Publication Date
CN105549269A true CN105549269A (zh) 2016-05-04

Family

ID=55828547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610091187.XA Pending CN105549269A (zh) 2016-02-18 2016-02-18 配向膜厚度均一性的优化方法及液晶显示面板

Country Status (3)

Country Link
US (1) US20180120601A1 (zh)
CN (1) CN105549269A (zh)
WO (1) WO2017140083A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017140083A1 (zh) * 2016-02-18 2017-08-24 深圳市华星光电技术有限公司 配向膜厚度均一性的优化方法及液晶显示面板
CN108064415A (zh) * 2016-12-27 2018-05-22 深圳市柔宇科技有限公司 阵列基板制作方法
CN110838468A (zh) * 2019-11-19 2020-02-25 京东方科技集团股份有限公司 显示基板的制作方法、显示基板、显示面板及显示装置
CN111463110A (zh) * 2020-04-15 2020-07-28 武汉华星光电半导体显示技术有限公司 基于溶液法的ito薄膜的制备方法
WO2020186565A1 (zh) * 2019-03-21 2020-09-24 深圳市华星光电技术有限公司 基板的制作方法及基板

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473779B (zh) * 2019-06-28 2021-11-23 福建华佳彩有限公司 一种新型tft器件结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090033815A1 (en) * 2007-07-31 2009-02-05 Au Optronics Corp. Pixel Structures, Methods of Forming the Same and Multi Domain Vertical Alignment LCDs
CN101556417A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 Ffs型tft-lcd阵列基板结构及其制造方法
CN102087443A (zh) * 2011-03-23 2011-06-08 四川大学 透射和反射电光特性相匹配的单盒厚透反液晶显示器
CN103364999A (zh) * 2012-03-28 2013-10-23 瀚宇彩晶股份有限公司 共面转换式液晶显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102285832B1 (ko) * 2014-07-25 2021-08-05 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
CN105093759A (zh) * 2015-09-11 2015-11-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板、显示装置
CN105549269A (zh) * 2016-02-18 2016-05-04 深圳市华星光电技术有限公司 配向膜厚度均一性的优化方法及液晶显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090033815A1 (en) * 2007-07-31 2009-02-05 Au Optronics Corp. Pixel Structures, Methods of Forming the Same and Multi Domain Vertical Alignment LCDs
CN101556417A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 Ffs型tft-lcd阵列基板结构及其制造方法
CN102087443A (zh) * 2011-03-23 2011-06-08 四川大学 透射和反射电光特性相匹配的单盒厚透反液晶显示器
CN103364999A (zh) * 2012-03-28 2013-10-23 瀚宇彩晶股份有限公司 共面转换式液晶显示装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017140083A1 (zh) * 2016-02-18 2017-08-24 深圳市华星光电技术有限公司 配向膜厚度均一性的优化方法及液晶显示面板
CN108064415A (zh) * 2016-12-27 2018-05-22 深圳市柔宇科技有限公司 阵列基板制作方法
WO2020186565A1 (zh) * 2019-03-21 2020-09-24 深圳市华星光电技术有限公司 基板的制作方法及基板
CN110838468A (zh) * 2019-11-19 2020-02-25 京东方科技集团股份有限公司 显示基板的制作方法、显示基板、显示面板及显示装置
CN111463110A (zh) * 2020-04-15 2020-07-28 武汉华星光电半导体显示技术有限公司 基于溶液法的ito薄膜的制备方法
CN111463110B (zh) * 2020-04-15 2023-05-09 武汉华星光电半导体显示技术有限公司 基于溶液法的ito薄膜的制备方法

Also Published As

Publication number Publication date
WO2017140083A1 (zh) 2017-08-24
US20180120601A1 (en) 2018-05-03

Similar Documents

Publication Publication Date Title
CN105549269A (zh) 配向膜厚度均一性的优化方法及液晶显示面板
US8692258B2 (en) Array substrate of TFT-LCD including a black matrix and method for manufacturing the same
CN102646634B (zh) Tft-lcd阵列基板制造方法
WO2020140366A1 (en) Array substrate and manufacturing method thereof, display panel and display apparatus
US10504943B2 (en) Method for manufacturing an array substrate motherboard
WO2019100502A1 (zh) 一种薄膜晶体管液晶显示器阵列基板及其制作方法
US8343787B2 (en) Method for fabricating liquid crystal display device
WO2017041347A1 (zh) Psva型液晶显示面板及其制作方法
CN101685229A (zh) 液晶显示器阵列基板的制造方法
US20170307921A1 (en) Thin Film Transistor Array Substrate, Manufacturing Method Therefor, and Display Device
US20180157082A1 (en) Touch panel and method of manufacturing the same
WO2013166831A1 (zh) 薄膜晶体管阵列基板及制作方法和显示装置
WO2015100776A1 (zh) 一种液晶显示器的阵列基板的制造方法
WO2020147495A1 (zh) 阵列基板及其制备方法、显示面板
CN102969282B (zh) 阵列基板及其制造方法、显示装置
CN101661941B (zh) Tft-lcd阵列基板结构及其制备方法
WO2016026180A1 (zh) 触摸屏的制造方法
CN106653774A (zh) 阵列基板及其制造方法、掩膜版、显示装置
US20180088373A1 (en) Array Substrate and Method for Manufacturing the Same, and Display Apparatus
CN106024705B (zh) Tft基板的制作方法
WO2016192364A1 (zh) 狭缝电极的制造方法、狭缝电极及显示面板
WO2018196193A1 (zh) 阵列基板及其制造方法、显示面板
US9281326B2 (en) Array substrate and manufacturing method thereof and display panel
CN102315167B (zh) 广视角液晶显示器阵列基板制作方法
WO2018196192A1 (zh) 阵列基板制程和阵列基板

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160504

RJ01 Rejection of invention patent application after publication