CN111463110B - 基于溶液法的ito薄膜的制备方法 - Google Patents
基于溶液法的ito薄膜的制备方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 40
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims abstract description 38
- 239000006185 dispersion Substances 0.000 claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 34
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- JRNVZBWKYDBUCA-UHFFFAOYSA-N N-chlorosuccinimide Chemical compound ClN1C(=O)CCC1=O JRNVZBWKYDBUCA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
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- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
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- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Abstract
本申请公开了一种基于溶液法的ITO薄膜的制备方法。该基于溶液法的ITO薄膜的制备方法包括:提供一阵列基板,并在所述阵列基板的钝化层上形成开孔的步骤;将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,其中,所述小分子有机相转移剂的沸点范围为85℃~115℃,所述小分子有机相转移剂优先选自四丁基氢氧化铵;将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤;在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤。本申请实施例通过所述基于溶液法的ITO薄膜的制备方法,所述ITO薄膜具有均匀组织,应力得到释放,以及材料的延伸性和韧性得到增加等优点。
Description
技术领域
本申请涉及薄膜制备技术领域,尤其涉及一种基于溶液法的ITO薄膜的制备方法。
背景技术
氧化铟锡(ITO)具有低电阻率、可见光范围内高透过率、较大光学禁带宽度等特点,广泛应用于平板显示、有机发光二极管等领域。
目前而言,ITO普遍通过磁控溅射(Sputter)成膜得到。然而,溅射技术也存在以下缺点:靶材利用率低,一般<40%;柔性基板适应性差。
因此,现需提供一种基于溶液法的ITO薄膜的制备方法。
发明内容
本申请实施例提供一种基于溶液法的ITO薄膜的制备方法,通过将ITO、四丁基氢氧化铵与NCs溶液混合以获得分散溶液,对所述分散溶液进行涂布(Coating)和烘烤(Bake)以有效去除所述四丁基氢氧化铵,并获得均匀组装的ITO晶粒,以及在惰性气氛中进行退火(Anneal)以细化ITO晶粒,并获得ITO薄膜,所述ITO薄膜具有均匀组织,应力得到释放,以及材料的延伸性和韧性得到增加等优点。
本申请实施例提供一种基于溶液法的ITO薄膜的制备方法,所述制备方法的步骤包括:
提供一阵列基板,并在所述阵列基板的钝化层上形成开孔的步骤;
将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,其中,所述小分子有机相转移剂的沸点范围为85℃~115℃;
将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤;
在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤。
在一些实施例中,在将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤中,所述小分子有机相转移剂为四丁基氢氧化铵。
在一些实施例中,在将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤中,所述NCs溶液为NCs溶于甲醇的混合液。
在一些实施例中,在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,所述涂布方式选自旋涂、刮涂中的至少一种。
在一些实施例中,在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,烘烤温度范围为90℃~130℃,烘烤时间为2min~7min。
在一些实施例中,在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤中,所述退火温度范围为280℃~320℃,退火时间为1小时以上。
在一些实施例中,在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤中,所述惰性气氛为氩气和氦气的混合气体,其中,所述氦气在所述惰性气氛中的浓度比例为5%。
在一些实施例中,在提供一钝化层并在所述钝化层上形成开孔的步骤中,采用常规4Mask黄光制程蚀刻形成所述开孔。
在一些实施例中,在将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,以及在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,通过所述分散溶液的浓度控制所述ITO晶粒的组装厚度。
在一些实施例中,所述ITO晶粒的组装厚度范围为100Å~1500Å。
本申请实施例提供的基于溶液法的ITO薄膜的制备方法,包括将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液,所述小分子有机相转移剂为四丁基氢氧化铵,再对所述分散溶液进行均匀涂布并烘烤以有效去除所述四丁基氢氧化铵,并获得均匀组装的ITO晶粒,其中,通过所述分散溶液的浓度控制所述均匀组装的ITO晶粒的组装厚度,以及在惰性气氛中进行退火以细化ITO晶粒,并获得ITO薄膜。本申请实施例通过溶液法制备的所述ITO薄膜具有均匀组织,应力得到释放,以及材料的延伸性和韧性得到增加等优点;以及,本发明实施例通过常规4Mask黄光制程蚀刻形成开孔41,能够降低阵列基板制程周期(Cycle Time)及成本;并且,本发明所需设备简单,利用厂线设备即可实现,且材料利用率高,有望成为具有前景的柔性基板ITO薄膜制备的新方案。
附图说明
下面结合附图,通过对本申请的具体实施方式详细描述,将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的ITO薄膜的结构示意图。
图2为本申请实施例提供的基于溶液法的ITO薄膜的制备方法的流程图。
图3为本申请实施例提供的ITO晶粒的状态变化图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
具体的,请参阅图1至图3,图1为本申请实施例提供的ITO薄膜的结构示意图,图2为本申请实施例提供的基于溶液法的ITO薄膜的制备方法的流程图;图3为本申请实施例提供的ITO晶粒的状态变化图。本申请实施例提供一种基于溶液法的ITO薄膜的制备方法,所述制备方法包括如下步骤:
(1)提供一阵列基板1,并在所述阵列基板1的钝化层4上形成开孔41的步骤;
在本步骤中,如图1所示的,提供的所述阵列基板1包括设置于一柔性基板2上的薄膜晶体管3、设置于所述薄膜晶体管3上并覆盖所述薄膜晶体管3的钝化层4,在所述钝化层4上形成开孔41,并且,所述开孔41采用常规4Mask黄光制程在所述钝化层4上蚀刻形成。
所述薄膜晶体管3包括设置于所述柔性基板2上的栅极31、设置于所述栅极31上并覆盖所述栅极31及所述柔性基板2的栅极绝缘层32、设置于所述栅极绝缘层32上的有源层33、设置于所述有源层33上的源漏极34,所述源漏极34包括源极(Source)35和漏极(Drain)36,所述钝化层4设置于所述源漏极34上并覆盖所述源漏极34及所述栅极绝缘层32,以及在所述钝化层4上设置所述的开孔41,所述开孔41贯穿所述钝化层4并延伸至所述漏极36,所述开孔41用于后续步骤中的走线布局。其中,所述栅极绝缘层32和所述钝化层4的材料可以选自SiNx。
(2)将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,其中,所述小分子有机相转移剂的沸点范围为85℃~115℃;
在本步骤中,如图3所示的,所述ITO晶粒A作为溶质,所述ITO晶粒A具有沸点为82℃、熔点为287℃以及不溶于水的特性;所述NCs溶液C作为溶剂,所述NCs溶液C为NCs溶于甲醇(methanol)的混合液,所述NCs(中文名称为:N-氯代丁二酰亚胺)具有沸点为216.5℃、溶于水、醇、苯、丙酮、乙酸,微溶于醚、氯仿、四氯化碳和石油醚的化学特性;以及,所述小分子有机相转移剂B作为分散剂,并且在任何不影响所述ITO晶粒A的化学性质的前提下,选取的所述小分子有机相转移剂B的沸点范围要求在85℃~115℃。
在本实施例中,所述小分子有机相转移剂B选自四丁基氢氧化铵(Tetrabutylammonium hydroxide,TBAOH),所述四丁基氢氧化铵的化学式为(C4H9)4NOH,分子量为259.47,所述四丁基氢氧化铵的沸点为100℃,所述四丁基氢氧化铵为有机强碱,具有易溶于水和甲醇的特性,所述四丁基氢氧化铵的结构式为
以及所述四丁基氢氧化铵的EPA化学物质信息为1-Butanaminium,N,N,N-tributyl-,hydroxide(2052-49-5)(即,1-丁烷,N,N-三丁基-,氢氧根)。
值得一提的是,在文献(Applied Physics Letters.2007,91(15),3588;Langmuir.2004,20,6946)中表明,所述四丁基氢氧化铵可取代长链相转移剂作为分散剂,可有效分散金属氧化物,从而制备得到均匀的金属氧化物分散液,从而,所述四丁基氢氧化铵能够使得所述ITO晶粒A有效分散于所述NCs溶液C,以获得所述分散溶液D。
在其他实施例中,所述小分子有机相转移剂B还可以选取本领域技术人员所知的其他常见的物质作为分散剂,在此不作具体限制。
(3)将所述分散溶液D涂布于所述钝化层4上并进行烘烤,以去除所述小分子有机相转移剂B,并获得均匀组装的ITO晶粒E的步骤;
在本步骤中,如图1和图2中步骤a所示的,采用涂布(Coating)方式,利用涂布机6将所述分散溶液D均匀涂布于所述钝化层4上,具体地,所述分散溶液D均匀涂布于所述钝化层4背离所述漏极36一侧的表面,且所述分散溶液D容纳于所述开孔41内并涂布于所述开孔41对应所述漏极36的表面,在本步骤中,所述分散溶液D涂布于所述钝化层4上后形成涂布层51,涂布方式选自旋涂、刮涂中的至少一种,且不限于以上涂布方式。
在本步骤中,如图2中步骤b所示的,对所述涂布层51进行烘烤(Bake),烘烤温度范围为90℃~130℃,烘烤时间为2min~7min,能够有效去除所述小分子有机相转移剂B,形成如图2中所示的烘烤层52,并获得如图3中所示的均匀组装的ITO晶粒E。在具体实施例中,所述烘烤温度及烘烤时间可根据如图2中步骤a中的涂布情况具体设定,例如在一种具体实施例中,当所述小分子有机相转移剂B选取所述四丁基氢氧化铵作为分散剂时,本步骤中的烘烤温度设定为120℃,烘烤时间设定为5min时,能够去除所述四丁基氢氧化铵,并且所述ITO晶粒E均匀排布,具有较高质量。
在其他实施例中,本领域技术人员还可以通过改变所述步骤(2)中的所述分散溶液D的浓度实现对本步骤(3)中的所述ITO晶粒E的组装厚度进行控制,所述ITO晶粒的组装厚度范围为100Å~1500Å。
(4)在惰性气氛中采用退火(Anneal)方式细化ITO晶粒的步骤。
在本步骤中,如图2中步骤c所示的,在惰性气氛中采用退火方式将均匀组装的ITO晶粒E进行细化,获得如图3所示的细化的ITO晶粒F,以及如图2所示的ITO薄膜53,所述ITO薄膜53包括所述细化的ITO晶粒F,其中,退火温度范围为280°~320°,退火温度为1小时以上,所述惰性气氛为氩气和氦气的混合气体,所述氦气在所述惰性气氛中的浓度比例为5%。在具体实施例中,所述的退火温度及所述惰性气氛的选择,可根据所述步骤(3)中的涂布情况具体选择,例如在一种具体实施例中,进行退火处理时的温度选取为300°,退火处理的时间为1小时,退火处理后得到的所述细化的ITO晶粒F具有组织均匀、应力得到释放、以及材料的延伸性和韧性得到增加等优点。
本申请实施例提供的一种基于溶液法的ITO薄膜的制备方法,通过将ITO晶粒A、小分子有机相转移剂B与NCs溶液C混合以获得分散溶液D,所述小分子有机相转移剂B为四丁基氢氧化铵,再对所述分散溶液D进行均匀涂布并烘烤以有效去除所述四丁基氢氧化铵,并获得均匀组装的ITO晶粒E,其中,通过所述分散溶液D的浓度控制所述均匀组装的ITO晶粒E的组装厚度,以及在惰性气氛中进行退火以获得细化的ITO晶粒F,并获得ITO薄膜53(5)。本申请实施例通过溶液法制备的所述ITO薄膜具有均匀组织,应力得到释放,以及材料的延伸性和韧性得到增加等优点;本发明实施例通过常规4Mask黄光制程蚀刻形成开孔41,能够降低阵列基板制程周期及成本;并且,本发明所需设备简单,利用厂线设备即可实现,且材料利用率高,有望成为具有前景的柔性基板ITO薄膜制备的新方案。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种基于溶液法的ITO薄膜的制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (9)
1.一种基于溶液法的ITO薄膜的制备方法,其特征在于,所述制备方法的步骤包括:
提供一阵列基板,并在所述阵列基板的钝化层上形成开孔的步骤;
将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,其中,所述小分子有机相转移剂的沸点范围为85℃~115℃,所述NCs溶液为NCs溶于甲醇的混合液,所述NCs为N-氯代丁二酰亚胺;
将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤;
在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤。
2.如权利要求1所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤中,所述小分子有机相转移剂为四丁基氢氧化铵。
3.如权利要求1所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,所述涂布方式选自旋涂、刮涂中的至少一种。
4.如权利要求3所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,烘烤温度范围为90℃~130℃,烘烤时间为2min~7min。
5.如权利要求1所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤中,所述退火温度范围为280℃~320℃,退火时间为1小时以上。
6.如权利要求5所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在惰性气氛中采用退火方式细化ITO晶粒并获得ITO薄膜的步骤中,所述惰性气氛为氩气和氦气的混合气体,其中,所述氦气在所述惰性气氛中的浓度比例为5%。
7.如权利要求1所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在提供一钝化层并在所述钝化层上形成开孔的步骤中,所述钝化层的材料包括氮化硅。
8.如权利要求1所述的基于溶液法的ITO薄膜的制备方法,其特征在于,在将ITO晶粒、小分子有机相转移剂与NCs溶液混合以获得分散溶液的步骤,以及在将所述分散溶液涂布于所述钝化层上并进行烘烤,以去除所述小分子有机相转移剂,并获得均匀组装的ITO晶粒的步骤中,通过所述分散溶液的浓度控制所述ITO晶粒的组装厚度。
9.如权利要求8所述的基于溶液法的ITO薄膜的制备方法,其特征在于,所述ITO晶粒的组装厚度范围为100Å~1500Å。
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JP5949395B2 (ja) * | 2012-09-27 | 2016-07-06 | 三菱マテリアル株式会社 | Ito粉末の製造方法 |
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CN101671231A (zh) * | 2003-12-12 | 2010-03-17 | 住友化学株式会社 | 聚合物化合物和使用该聚合物化合物的聚合物发光器件 |
JP2008117960A (ja) * | 2006-11-06 | 2008-05-22 | Fuji Xerox Co Ltd | 有機半導体トランジスタ素子、その製造方法、それを用いた半導体装置及び表示素子 |
JP2009123396A (ja) * | 2007-11-12 | 2009-06-04 | Dowa Electronics Materials Co Ltd | Ito塗布液およびその製造方法 |
WO2011149118A1 (ko) * | 2010-05-24 | 2011-12-01 | 연세대학교 산학협력단 | 액상 공정을 이용한 산화물 반도체 박막의 형성 방법, 결정화 방법, 이를 이용한 반도체 소자 형성 방법 |
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CN104318983A (zh) * | 2014-10-31 | 2015-01-28 | 徐东 | 一种ito薄膜的制备方法 |
CN105776882A (zh) * | 2014-12-15 | 2016-07-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种ito薄膜的制备方法 |
CN105549269A (zh) * | 2016-02-18 | 2016-05-04 | 深圳市华星光电技术有限公司 | 配向膜厚度均一性的优化方法及液晶显示面板 |
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WO2021208224A1 (zh) | 2021-10-21 |
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