CN100547824C - 有机绝缘体、包含它的有机薄膜晶体管阵列面板及其制法 - Google Patents
有机绝缘体、包含它的有机薄膜晶体管阵列面板及其制法 Download PDFInfo
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- CN100547824C CN100547824C CNB2005101216409A CN200510121640A CN100547824C CN 100547824 C CN100547824 C CN 100547824C CN B2005101216409 A CNB2005101216409 A CN B2005101216409A CN 200510121640 A CN200510121640 A CN 200510121640A CN 100547824 C CN100547824 C CN 100547824C
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- film transistor
- insulator
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- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 239000012212 insulator Substances 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 12
- 239000000126 substance Substances 0.000 claims abstract description 51
- 239000010408 film Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 239000004033 plastic Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 150000002220 fluorenes Chemical class 0.000 claims description 5
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 5
- 229920000123 polythiophene Polymers 0.000 claims description 5
- 150000002964 pentacenes Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 9
- 239000002184 metal Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 24
- 238000000151 deposition Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- 235000008429 bread Nutrition 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000005582 pentacene group Chemical group 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08B—POLYSACCHARIDES; DERIVATIVES THEREOF
- C08B37/00—Preparation of polysaccharides not provided for in groups C08B1/00 - C08B35/00; Derivatives thereof
- C08B37/0006—Homoglycans, i.e. polysaccharides having a main chain consisting of one single sugar, e.g. colominic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biochemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040109061A KR101142998B1 (ko) | 2004-12-20 | 2004-12-20 | 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법 |
KR109061/04 | 2004-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841809A CN1841809A (zh) | 2006-10-04 |
CN100547824C true CN100547824C (zh) | 2009-10-07 |
Family
ID=36682940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101216409A Active CN100547824C (zh) | 2004-12-20 | 2005-12-20 | 有机绝缘体、包含它的有机薄膜晶体管阵列面板及其制法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7368336B2 (zh) |
JP (1) | JP2006216938A (zh) |
KR (1) | KR101142998B1 (zh) |
CN (1) | CN100547824C (zh) |
TW (1) | TWI387821B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7566899B2 (en) * | 2005-12-21 | 2009-07-28 | Palo Alto Research Center Incorporated | Organic thin-film transistor backplane with multi-layer contact structures and data lines |
JP5320746B2 (ja) * | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | 薄膜トランジスタ |
US8772774B2 (en) * | 2007-12-14 | 2014-07-08 | E. I. Du Pont De Nemours And Company | Backplane structures for organic light emitting electronic devices using a TFT substrate |
KR101041145B1 (ko) * | 2008-07-09 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 폴리실세스퀴옥산 공중합체, 그의 제조방법, 이를 이용하는폴리실세스퀴옥산 공중합체 박막, 및 이를 이용하는유기전계발광표시장치 |
KR101545460B1 (ko) * | 2008-09-12 | 2015-08-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 생산 방법 |
TWI343129B (en) * | 2008-11-24 | 2011-06-01 | Ind Tech Res Inst | Thin film transistor |
US20110058770A1 (en) * | 2009-09-10 | 2011-03-10 | E. I. Du Pont De Nemours And Company | Sub-surface engraving of oled substrates for improved optical outcoupling |
JP2013062307A (ja) | 2011-09-12 | 2013-04-04 | Sony Corp | 薄膜トランジスタおよび電子機器 |
KR20180113396A (ko) | 2017-04-06 | 2018-10-16 | 건국대학교 산학협력단 | 수직 및 수평 상분리된 반도체 고분자/절연성 고분자 블렌드 박막과 이를 포함하는 유기박막 트랜지스터 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5325856B2 (zh) | 1974-02-06 | 1978-07-29 | ||
FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JP2000109679A (ja) * | 1998-10-06 | 2000-04-18 | Sony Corp | 低誘電率絶縁膜用樹脂組成物、低誘電率絶縁膜形成方法及び半導体装置の製造方法 |
US6274224B1 (en) | 1999-02-01 | 2001-08-14 | 3M Innovative Properties Company | Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article |
JP2001055490A (ja) | 1999-08-17 | 2001-02-27 | Jsr Corp | フェニレン基含有(共)重合体組成物 |
JP2005513788A (ja) | 2001-12-19 | 2005-05-12 | アベシア・リミテッド | 有機誘電体を有する有機電界効果トランジスタ |
JP4204880B2 (ja) | 2003-03-04 | 2009-01-07 | 出光興産株式会社 | ビス(3−アミノ−4−ヒドロキシフェニル)アダマンタン誘導体及びその製造方法 |
KR101102152B1 (ko) * | 2005-06-28 | 2012-01-02 | 삼성전자주식회사 | 유기박막 트랜지스터의 제조방법 및 그에 의해 제조된유기박막 트랜지스터 |
JP2007045966A (ja) * | 2005-08-11 | 2007-02-22 | Fujifilm Corp | 絶縁膜形成用組成物、絶縁膜、およびその製造方法 |
US20080056678A1 (en) | 2006-04-18 | 2008-03-06 | Kim Kun S | Apparatus for reproducing data, method thereof, apparatus for recording the same, method thereof and recording medium |
-
2004
- 2004-12-20 KR KR1020040109061A patent/KR101142998B1/ko active IP Right Grant
-
2005
- 2005-12-20 CN CNB2005101216409A patent/CN100547824C/zh active Active
- 2005-12-20 TW TW094145403A patent/TWI387821B/zh active
- 2005-12-20 JP JP2005365753A patent/JP2006216938A/ja active Pending
- 2005-12-20 US US11/313,431 patent/US7368336B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006216938A (ja) | 2006-08-17 |
KR20060070353A (ko) | 2006-06-23 |
KR101142998B1 (ko) | 2012-05-08 |
TWI387821B (zh) | 2013-03-01 |
US7368336B2 (en) | 2008-05-06 |
TW200627033A (en) | 2006-08-01 |
US20060157690A1 (en) | 2006-07-20 |
CN1841809A (zh) | 2006-10-04 |
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Effective date of registration: 20121109 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Patentee after: Obstetrics Unit Efforts Consortium of Soer Univ. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co., Ltd. Patentee before: Obstetrics Unit Efforts Consortium of Soer Univ. |