CN100485907C - 平板显示器及其制备方法 - Google Patents
平板显示器及其制备方法 Download PDFInfo
- Publication number
- CN100485907C CN100485907C CNB2006101063944A CN200610106394A CN100485907C CN 100485907 C CN100485907 C CN 100485907C CN B2006101063944 A CNB2006101063944 A CN B2006101063944A CN 200610106394 A CN200610106394 A CN 200610106394A CN 100485907 C CN100485907 C CN 100485907C
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- China
- Prior art keywords
- passivation layer
- organic semiconductor
- semiconductor layer
- metal level
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 238000002161 passivation Methods 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 230000008021 deposition Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 160
- 238000000151 deposition Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 21
- 239000011229 interlayer Substances 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 27
- 239000000203 mixture Substances 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 9
- 229920003023 plastic Polymers 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 239000011368 organic material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000009545 invasion Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR63926/05 | 2005-07-14 | ||
KR1020050063926A KR20070009013A (ko) | 2005-07-14 | 2005-07-14 | 평판표시장치 및 평판표시장치의 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101710229A Division CN101419944B (zh) | 2005-07-14 | 2006-07-14 | 平板显示器的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1897257A CN1897257A (zh) | 2007-01-17 |
CN100485907C true CN100485907C (zh) | 2009-05-06 |
Family
ID=37609715
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101710229A Expired - Fee Related CN101419944B (zh) | 2005-07-14 | 2006-07-14 | 平板显示器的制备方法 |
CNB2006101063944A Expired - Fee Related CN100485907C (zh) | 2005-07-14 | 2006-07-14 | 平板显示器及其制备方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101710229A Expired - Fee Related CN101419944B (zh) | 2005-07-14 | 2006-07-14 | 平板显示器的制备方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7575951B2 (zh) |
JP (1) | JP4554567B2 (zh) |
KR (1) | KR20070009013A (zh) |
CN (2) | CN101419944B (zh) |
TW (1) | TWI302750B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153354A (ja) * | 2006-12-15 | 2008-07-03 | Sony Corp | 有機半導体パターンの形成方法および半導体装置の製造方法 |
GB2448174B (en) * | 2007-04-04 | 2009-12-09 | Cambridge Display Tech Ltd | Organic thin film transistors |
GB2450675A (en) * | 2007-04-04 | 2009-01-07 | Cambridge Display Tech Ltd | Active matrix organic displays |
KR101396939B1 (ko) * | 2007-12-05 | 2014-05-20 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터 및 그 제조 방법 |
JP2009224542A (ja) * | 2008-03-17 | 2009-10-01 | Sony Corp | 半導体装置および表示装置 |
JP2010258118A (ja) * | 2009-04-23 | 2010-11-11 | Sony Corp | 半導体装置、半導体装置の製造方法、表示装置、および電子機器 |
WO2011128932A1 (ja) | 2010-04-13 | 2011-10-20 | パナソニック株式会社 | 有機半導体装置及び有機半導体装置の製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1338914A3 (en) * | 1995-11-21 | 2003-11-19 | Samsung Electronics Co., Ltd. | Method for manufacturing liquid crystal display |
JP3597468B2 (ja) * | 1998-06-19 | 2004-12-08 | シン フイルム エレクトロニクス エイエスエイ | 集積無機/有機相補型薄膜トランジスタ回路およびその製造方法 |
JP2000269504A (ja) * | 1999-03-16 | 2000-09-29 | Hitachi Ltd | 半導体装置、その製造方法及び液晶表示装置 |
KR100632216B1 (ko) * | 1999-12-16 | 2006-10-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
US6833883B2 (en) * | 2001-02-13 | 2004-12-21 | Lg. Philips Lcd Co., Ltd. | Array substrate for reflective and transflective liquid crystal display devices and manufacturing method for the same |
KR100799464B1 (ko) * | 2001-03-21 | 2008-02-01 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR100796756B1 (ko) * | 2001-11-12 | 2008-01-22 | 삼성전자주식회사 | 반도체 소자의 접촉부 및 그 제조 방법과 이를 포함하는표시 장치용 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100834344B1 (ko) * | 2001-12-29 | 2008-06-02 | 엘지디스플레이 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
US6872588B2 (en) * | 2002-11-22 | 2005-03-29 | Palo Alto Research Center Inc. | Method of fabrication of electronic devices using microfluidic channels |
KR100913305B1 (ko) | 2003-02-04 | 2009-08-26 | 삼성전자주식회사 | 반투과형 액정표시장치 및 그 제조 방법 |
CN1282259C (zh) | 2003-03-03 | 2006-10-25 | 中国科学院长春应用化学研究所 | 含有保护层的有机半导体场效应晶体管及制作方法 |
KR100936908B1 (ko) * | 2003-07-18 | 2010-01-18 | 삼성전자주식회사 | 전계발광 디바이스의 박막 트랜지스터, 이를 이용한전계발광 디바이스 및 이의 제조 방법 |
TWI277815B (en) * | 2004-01-16 | 2007-04-01 | Hannstar Display Corp | Liquid crystal display and manufacturing method of liquid crystal display including substrate |
KR100603349B1 (ko) | 2004-06-17 | 2006-07-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 제조한 방법 및 이를 구비하는평판 디스플레이 장치 |
KR101107246B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR100623419B1 (ko) * | 2005-06-29 | 2006-09-13 | 엘지.필립스 엘시디 주식회사 | 쉐도우 마스크 및 그의 제조 방법 |
US7601567B2 (en) * | 2005-12-13 | 2009-10-13 | Samsung Mobile Display Co., Ltd. | Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor |
US7800101B2 (en) * | 2006-01-05 | 2010-09-21 | Samsung Electronics Co., Ltd. | Thin film transistor having openings formed therein |
US7768000B2 (en) * | 2006-09-29 | 2010-08-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
-
2005
- 2005-07-14 KR KR1020050063926A patent/KR20070009013A/ko not_active Application Discontinuation
-
2006
- 2006-06-26 TW TW095122973A patent/TWI302750B/zh not_active IP Right Cessation
- 2006-07-12 JP JP2006191301A patent/JP4554567B2/ja not_active Expired - Fee Related
- 2006-07-14 CN CN2008101710229A patent/CN101419944B/zh not_active Expired - Fee Related
- 2006-07-14 CN CNB2006101063944A patent/CN100485907C/zh not_active Expired - Fee Related
- 2006-07-14 US US11/486,685 patent/US7575951B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007027733A (ja) | 2007-02-01 |
US7575951B2 (en) | 2009-08-18 |
CN1897257A (zh) | 2007-01-17 |
TWI302750B (en) | 2008-11-01 |
CN101419944A (zh) | 2009-04-29 |
JP4554567B2 (ja) | 2010-09-29 |
KR20070009013A (ko) | 2007-01-18 |
CN101419944B (zh) | 2012-04-18 |
US20070012916A1 (en) | 2007-01-18 |
TW200707753A (en) | 2007-02-16 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121101 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121101 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090506 Termination date: 20210714 |
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CF01 | Termination of patent right due to non-payment of annual fee |