CN105164322A - 碳化硅衬底，碳化硅半导体器件以及制造碳化硅衬底和碳化硅半导体器件的方法 - Google Patents

碳化硅衬底，碳化硅半导体器件以及制造碳化硅衬底和碳化硅半导体器件的方法 Download PDF

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Publication number
CN105164322A
CN105164322A CN201480024728.6A CN201480024728A CN105164322A CN 105164322 A CN105164322 A CN 105164322A CN 201480024728 A CN201480024728 A CN 201480024728A CN 105164322 A CN105164322 A CN 105164322A
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silicon carbide
major surfaces
main surface
side end
dioxide layer
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Chinese (zh)
Inventor
田中聪
山田俊介
堀井拓
松岛彰
久保田良辅
冲田恭子
西浦隆幸
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CN201480024728.6A 2013-05-29 2014-04-03 碳化硅衬底，碳化硅半导体器件以及制造碳化硅衬底和碳化硅半导体器件的方法 Pending CN105164322A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013113090A JP5803979B2 (ja) 2013-05-29 2013-05-29 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
JP2013-113090 2013-05-29
PCT/JP2014/059825 WO2014192411A1 (ja) 2013-05-29 2014-04-03 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法

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CN105164322A true CN105164322A (zh) 2015-12-16

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US (1) US9691608B2 (enExample)
JP (1) JP5803979B2 (enExample)
CN (1) CN105164322A (enExample)
DE (1) DE112014002647B4 (enExample)
WO (1) WO2014192411A1 (enExample)

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CN110468446A (zh) * 2018-05-11 2019-11-19 硅晶体有限公司 倒角的碳化硅衬底以及倒角的方法
CN110709963A (zh) * 2017-06-28 2020-01-17 昭和电工株式会社 SiC外延晶片及其制造方法
CN113352485A (zh) * 2021-06-09 2021-09-07 阜宁协鑫光伏科技有限公司 硅片多线切割方法

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JP2016213419A (ja) * 2015-05-13 2016-12-15 住友電気工業株式会社 炭化珪素半導体装置
JP6468291B2 (ja) * 2015-09-11 2019-02-13 住友電気工業株式会社 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP6703915B2 (ja) * 2016-07-29 2020-06-03 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法、半導体装置および半導体装置の製造方法
JP7302716B2 (ja) * 2017-06-28 2023-07-04 株式会社レゾナック ＳｉＣエピタキシャルウェハ及びその製造方法
JP7125252B2 (ja) * 2017-08-30 2022-08-24 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
EP3567139B1 (en) 2018-05-11 2021-04-07 SiCrystal GmbH Chamfered silicon carbide substrate and method of chamfering
JP7388365B2 (ja) * 2018-12-04 2023-11-29 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置
JP7491307B2 (ja) * 2019-05-17 2024-05-28 住友電気工業株式会社 炭化珪素基板
CN114026672B (zh) * 2019-06-13 2025-03-11 住友电气工业株式会社 碳化硅衬底和碳化硅衬底的制造方法
WO2025191767A1 (ja) * 2024-03-14 2025-09-18 三菱電機株式会社 接合基板、接合基板の製造方法、及び、半導体装置の製造方法
FR3161062A1 (fr) * 2024-04-03 2025-10-10 Soitec Procede de preparation d’une structure composite pour la fabrication d’une couche en carbure de silicium homoepitaxiee, et structure composite associee

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CN110468446B (zh) * 2018-05-11 2020-12-11 硅晶体有限公司 倒角的碳化硅衬底以及倒角的方法
CN113352485A (zh) * 2021-06-09 2021-09-07 阜宁协鑫光伏科技有限公司 硅片多线切割方法

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