CN105164306A - 电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 - Google Patents

电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 Download PDF

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Publication number
CN105164306A
CN105164306A CN201480021672.9A CN201480021672A CN105164306A CN 105164306 A CN105164306 A CN 105164306A CN 201480021672 A CN201480021672 A CN 201480021672A CN 105164306 A CN105164306 A CN 105164306A
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CN
China
Prior art keywords
intermetallic
powder
arc evaporation
ceramic
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480021672.9A
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English (en)
Chinese (zh)
Inventor
科琳娜·萨比策
耶格·保里契
皮特·布尔西克
保罗·H·迈尔霍菲尔
理查德·哈赫鲍尔
米利亚姆·阿恩特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Trading AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading AG Truebbach filed Critical Oerlikon Trading AG Truebbach
Publication of CN105164306A publication Critical patent/CN105164306A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Products (AREA)
CN201480021672.9A 2013-04-18 2014-04-14 电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 Pending CN105164306A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013006633.6 2013-04-18
DE102013006633.6A DE102013006633A1 (de) 2013-04-18 2013-04-18 Funkenverdampfen von metallischen, intermetallischen und keramischen Targetmaterialien um Al-Cr-N Beschichtungen herzustellen
PCT/EP2014/000989 WO2014170003A1 (de) 2013-04-18 2014-04-14 Funkenverdampfen von metallischen, intermetallischen und keramischen targetmaterialien um al-cr-n beschichtungen herzustellen

Publications (1)

Publication Number Publication Date
CN105164306A true CN105164306A (zh) 2015-12-16

Family

ID=50513881

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480021672.9A Pending CN105164306A (zh) 2013-04-18 2014-04-14 电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层

Country Status (8)

Country Link
US (1) US20160053364A1 (enExample)
EP (1) EP2986753B8 (enExample)
JP (1) JP2016519218A (enExample)
KR (1) KR20150143783A (enExample)
CN (1) CN105164306A (enExample)
AR (1) AR095879A1 (enExample)
DE (1) DE102013006633A1 (enExample)
WO (1) WO2014170003A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102877458B1 (ko) * 2023-03-09 2025-10-29 주식회사 이엠엘 다중 타겟을 이용한 코팅 방법 및 그에 따른 코팅재

Citations (7)

* Cited by examiner, † Cited by third party
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CH639035A5 (de) * 1977-09-29 1983-10-31 Bleichert Foerderanlagen Gmbh Einschienenfoerderanlage.
JP2001226764A (ja) * 2000-02-10 2001-08-21 Shin Etsu Chem Co Ltd スパッタリングのターゲット材用焼結体、その製造方法、及びスパッタリング用ターゲット
CN1607051A (zh) * 2003-10-15 2005-04-20 联合工艺公司 难熔金属型芯涂层
CN101220457A (zh) * 2007-01-08 2008-07-16 贺利氏公司 溅射靶和制造具有多种材料的溅射靶的方法
JP2010236060A (ja) * 2009-03-31 2010-10-21 Hitachi Tool Engineering Ltd 窒化物分散Ｔｉ−Ａｌ系ターゲット及びその製造方法
CN102016104A (zh) * 2008-04-24 2011-04-13 欧瑞康贸易股份公司(特吕巴赫) 通过弧蒸发制造金属氧化物层的方法
CN102782178A (zh) * 2010-02-28 2012-11-14 欧瑞康贸易股份公司(特吕巴赫) 通过反应性阴极电弧蒸发合成金属氧化物

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US2275585A (en) * 1937-10-08 1942-03-10 Clad Metals Ind Inc Method of making composite metal
US3836451A (en) * 1968-12-26 1974-09-17 A Snaper Arc deposition apparatus
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
CH693035A5 (de) * 1994-06-24 2003-01-31 Unaxis Balzers Ag Verfahren zur Herstellung eines Targets, nach dem Verfahren hergestelltes Target und Verwendung desselben.
JPH09249966A (ja) * 1996-03-13 1997-09-22 Mitsubishi Materials Corp 金属間化合物分散型焼結Ａｌ合金製スパッタリングターゲット
US6759005B2 (en) * 2002-07-23 2004-07-06 Heraeus, Inc. Fabrication of B/C/N/O/Si doped sputtering targets
KR101047630B1 (ko) * 2003-04-28 2011-07-07 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 Ａｌｃｒ-함유 경질 재료 층을 포함하는 공작물 및 제조방법
JP5192642B2 (ja) * 2005-11-11 2013-05-08 三菱重工業株式会社 表面被覆部材及びその製造方法ならびに工具及び工作装置
JP2008179853A (ja) * 2007-01-24 2008-08-07 Hitachi Tool Engineering Ltd ホウ化物含有ターゲット材
SE531749C2 (sv) * 2007-09-17 2009-07-28 Seco Tools Ab Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel
RU2501885C2 (ru) * 2008-08-17 2013-12-20 Эрликон Трейдинг Аг, Трюббах Применение мишени для искрового напыления и способ получения подходящей для этого применения мишени
DE102010042828A1 (de) * 2010-10-22 2012-04-26 Walter Ag Target für Lichtbogenverfahren

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH639035A5 (de) * 1977-09-29 1983-10-31 Bleichert Foerderanlagen Gmbh Einschienenfoerderanlage.
JP2001226764A (ja) * 2000-02-10 2001-08-21 Shin Etsu Chem Co Ltd スパッタリングのターゲット材用焼結体、その製造方法、及びスパッタリング用ターゲット
CN1607051A (zh) * 2003-10-15 2005-04-20 联合工艺公司 难熔金属型芯涂层
CN101220457A (zh) * 2007-01-08 2008-07-16 贺利氏公司 溅射靶和制造具有多种材料的溅射靶的方法
CN102016104A (zh) * 2008-04-24 2011-04-13 欧瑞康贸易股份公司(特吕巴赫) 通过弧蒸发制造金属氧化物层的方法
JP2010236060A (ja) * 2009-03-31 2010-10-21 Hitachi Tool Engineering Ltd 窒化物分散Ｔｉ−Ａｌ系ターゲット及びその製造方法
CN102782178A (zh) * 2010-02-28 2012-11-14 欧瑞康贸易股份公司(特吕巴赫) 通过反应性阴极电弧蒸发合成金属氧化物

Also Published As

Publication number Publication date
AR095879A1 (es) 2015-11-18
EP2986753B1 (de) 2019-03-20
WO2014170003A1 (de) 2014-10-23
JP2016519218A (ja) 2016-06-30
DE102013006633A1 (de) 2014-10-23
KR20150143783A (ko) 2015-12-23
US20160053364A1 (en) 2016-02-25
EP2986753B8 (de) 2019-06-19
EP2986753A1 (de) 2016-02-24

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Application publication date: 20151216

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