CN105164306A - 电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 - Google Patents
电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 Download PDFInfo
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- CN105164306A CN105164306A CN201480021672.9A CN201480021672A CN105164306A CN 105164306 A CN105164306 A CN 105164306A CN 201480021672 A CN201480021672 A CN 201480021672A CN 105164306 A CN105164306 A CN 105164306A
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- arc evaporation
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- 239000000919 ceramic Substances 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 title claims description 7
- 239000002184 metal Substances 0.000 title claims description 7
- 230000008021 deposition Effects 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title description 5
- 229910019590 Cr-N Inorganic materials 0.000 title description 3
- 229910019588 Cr—N Inorganic materials 0.000 title description 3
- -1 intermetallic Substances 0.000 title 1
- 239000013077 target material Substances 0.000 title 1
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 14
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000004663 powder metallurgy Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Ceramic Products (AREA)
Abstract
本发明涉及借助粉末冶金制造的靶的电弧蒸发，其中成分以金属间化合物的形式存在。为了靶制造而采用以下粉末，该粉末包含第一金属间化合物和第二金属间化合物和/或第一陶瓷化合物和第二陶瓷化合物。
Description
本发明涉及基于阴极电弧蒸发的涂覆方法。阴极电弧蒸发是一种用于在高涂覆速率下沉积氮化物例如AlxCr1-xN层的已知方法。利用该方法，可以获得紧密且良好附着于表面的层膜。但在涂覆过程中形成了宏观粒子(小滴)，其加入层膜中并且削弱了层膜质量。小滴的形成尤其出现在当靶具有至少两种熔点截然不同的金属时，就像铝和铬时出现的那样。此时，小滴的尺寸和数量可以通过提高氮流量被降低。
与此相比，本发明的任务是进一步缩减小滴的数量和尺寸。
根据本发明，电弧蒸发借助粉末冶金制造的靶来工作，其中成分以金属间化合物形式存在，即为了靶制造而采用以下粉末，该粉末包含金属间化合物。这样的金属间化合物的例子是Al8Cr5。在此情况下，例如可以在含氮气氛中获得Al-Cr-N层膜，其基本包含有60原子％的Al和40原子％的Cr的金属含量成分。如果例如要制造浓度比为70原子％的Al和30原子％的Cr的层膜，则可以采用具有金属间化合物Al9Cr4的靶。
如果要获得其它的浓度比，则根据本发明的另一个实施方式可以采用粉末冶金制造的靶用于电弧蒸发；在该靶中，一种金属间化合物的粉末已经与另一种金属间化合物的粉末混合。金属成分的原子浓度于是取决于两种粉末的混合比。
根据另一个实施方式，也可以采用包含陶瓷化合物AlN和CrN的靶。
通过本发明公开了：
-一种借助阴极电弧蒸发涂覆基材的方法，其中，作为用于电弧蒸发的材料源，采用粉末冶金制造的靶，其中，被用于靶制造的粉末包含第一金属间化合物和第二金属间化合物。
-一种借助阴极电弧蒸发涂覆基材的方法，其中，作为用于电弧蒸发的材料源，采用粉末冶金制造的靶，其中，被用于靶制造的粉末包含第一陶瓷化合物，且最好是AlN，并包含第二陶瓷化合物，且最好是CrN。
-一种如上所述的方法，其中，第一陶瓷化合物是AlN。
-一种如上所述的方法，其中，第二陶瓷化合物是AlN。
根据本发明，为了制造某些层膜也可能有利的是：采用如上所述的方法，但在这里，被用于靶制造的粉末不仅包含金属间化合物，也包含陶瓷化合物。
Claims (5)
1.一种借助阴极电弧蒸发涂覆基材的方法，其特征是，作为用于电弧蒸发的材料源，采用粉末冶金制造的靶，其中，被用于靶制造的粉末包含第一金属间化合物和第二金属间化合物。
2.一种借助阴极电弧蒸发涂覆基材的方法，其特征是，作为用于电弧蒸发的材料源，采用粉末冶金制造的靶，其中，被用于靶制造的粉末包含第一陶瓷化合物且最好是AlN并包含第二陶瓷化合物且最好是CrN。
3.根据权利要求2的方法，其特征是，被用于靶制造的粉末是第一陶瓷化合物AlN。
4.根据权利要求2或3的方法，其特征是，被用于靶制造的粉末是第二陶瓷化合物CrN。
5.根据前述权利要求之一的方法，其特征是，被用于靶制造的粉末包含金属间化合物和陶瓷化合物。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013006633.6 | 2013-04-18 | ||
| DE102013006633.6A DE102013006633A1 (de) | 2013-04-18 | 2013-04-18 | Funkenverdampfen von metallischen, intermetallischen und keramischen Targetmaterialien um Al-Cr-N Beschichtungen herzustellen |
| PCT/EP2014/000989 WO2014170003A1 (de) | 2013-04-18 | 2014-04-14 | Funkenverdampfen von metallischen, intermetallischen und keramischen targetmaterialien um al-cr-n beschichtungen herzustellen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105164306A true CN105164306A (zh) | 2015-12-16 |
Family
ID=50513881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480021672.9A Pending CN105164306A (zh) | 2013-04-18 | 2014-04-14 | 电弧蒸发金属靶材、金属间化合物靶材和陶瓷靶材以制造Al-Cr-N涂层 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20160053364A1 (zh) |
| EP (1) | EP2986753B8 (zh) |
| JP (1) | JP2016519218A (zh) |
| KR (1) | KR20150143783A (zh) |
| CN (1) | CN105164306A (zh) |
| AR (1) | AR095879A1 (zh) |
| DE (1) | DE102013006633A1 (zh) |
| WO (1) | WO2014170003A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH639035A5 (de) * | 1977-09-29 | 1983-10-31 | Bleichert Foerderanlagen Gmbh | Einschienenfoerderanlage. |
| JP2001226764A (ja) * | 2000-02-10 | 2001-08-21 | Shin Etsu Chem Co Ltd | スパッタリングのターゲット材用焼結体、その製造方法、及びスパッタリング用ターゲット |
| CN1607051A (zh) * | 2003-10-15 | 2005-04-20 | 联合工艺公司 | 难熔金属型芯涂层 |
| CN101220457A (zh) * | 2007-01-08 | 2008-07-16 | 贺利氏公司 | 溅射靶和制造具有多种材料的溅射靶的方法 |
| JP2010236060A (ja) * | 2009-03-31 | 2010-10-21 | Hitachi Tool Engineering Ltd | 窒化物分散Ｔｉ−Ａｌ系ターゲット及びその製造方法 |
| CN102016104A (zh) * | 2008-04-24 | 2011-04-13 | 欧瑞康贸易股份公司(特吕巴赫) | 通过弧蒸发制造金属氧化物层的方法 |
| CN102782178A (zh) * | 2010-02-28 | 2012-11-14 | 欧瑞康贸易股份公司(特吕巴赫) | 通过反应性阴极电弧蒸发合成金属氧化物 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US2275585A (en) * | 1937-10-08 | 1942-03-10 | Clad Metals Ind Inc | Method of making composite metal |
| US3836451A (en) * | 1968-12-26 | 1974-09-17 | A Snaper | Arc deposition apparatus |
| US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
| US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
| CH693035A5 (de) * | 1994-06-24 | 2003-01-31 | Unaxis Balzers Ag | Verfahren zur Herstellung eines Targets, nach dem Verfahren hergestelltes Target und Verwendung desselben. |
| JPH09249966A (ja) * | 1996-03-13 | 1997-09-22 | Mitsubishi Materials Corp | 金属間化合物分散型焼結Ａｌ合金製スパッタリングターゲット |
| US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
| PL1627094T3 (pl) * | 2003-04-28 | 2019-04-30 | Oerlikon Surface Solutions Ag Pfaeffikon | Przedmiot obrabiany z warstwą z bardzo twardego materiału zawierającego AlCr |
| JP5192642B2 (ja) * | 2005-11-11 | 2013-05-08 | 三菱重工業株式会社 | 表面被覆部材及びその製造方法ならびに工具及び工作装置 |
| JP2008179853A (ja) * | 2007-01-24 | 2008-08-07 | Hitachi Tool Engineering Ltd | ホウ化物含有ターゲット材 |
| SE531749C2 (sv) * | 2007-09-17 | 2009-07-28 | Seco Tools Ab | Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel |
| WO2010020362A1 (de) * | 2008-08-17 | 2010-02-25 | Oerlikon Trading Ag, Trübbach | Verwendung eines targets für das funkenverdampfen und verfahren zum herstellen eines für diese verwendung geeigneten targets |
| DE102010042828A1 (de) * | 2010-10-22 | 2012-04-26 | Walter Ag | Target für Lichtbogenverfahren |
-
2013
- 2013-04-18 DE DE102013006633.6A patent/DE102013006633A1/de not_active Withdrawn
-
2014
- 2014-04-14 CN CN201480021672.9A patent/CN105164306A/zh active Pending
- 2014-04-14 WO PCT/EP2014/000989 patent/WO2014170003A1/de active Application Filing
- 2014-04-14 US US14/785,357 patent/US20160053364A1/en not_active Abandoned
- 2014-04-14 JP JP2016508033A patent/JP2016519218A/ja active Pending
- 2014-04-14 EP EP14718326.3A patent/EP2986753B8/de active Active
- 2014-04-14 KR KR1020157032710A patent/KR20150143783A/ko not_active Application Discontinuation
- 2014-04-16 AR ARP140101617A patent/AR095879A1/es unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH639035A5 (de) * | 1977-09-29 | 1983-10-31 | Bleichert Foerderanlagen Gmbh | Einschienenfoerderanlage. |
| JP2001226764A (ja) * | 2000-02-10 | 2001-08-21 | Shin Etsu Chem Co Ltd | スパッタリングのターゲット材用焼結体、その製造方法、及びスパッタリング用ターゲット |
| CN1607051A (zh) * | 2003-10-15 | 2005-04-20 | 联合工艺公司 | 难熔金属型芯涂层 |
| CN101220457A (zh) * | 2007-01-08 | 2008-07-16 | 贺利氏公司 | 溅射靶和制造具有多种材料的溅射靶的方法 |
| CN102016104A (zh) * | 2008-04-24 | 2011-04-13 | 欧瑞康贸易股份公司(特吕巴赫) | 通过弧蒸发制造金属氧化物层的方法 |
| JP2010236060A (ja) * | 2009-03-31 | 2010-10-21 | Hitachi Tool Engineering Ltd | 窒化物分散Ｔｉ−Ａｌ系ターゲット及びその製造方法 |
| CN102782178A (zh) * | 2010-02-28 | 2012-11-14 | 欧瑞康贸易股份公司(特吕巴赫) | 通过反应性阴极电弧蒸发合成金属氧化物 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2986753B1 (de) | 2019-03-20 |
| DE102013006633A1 (de) | 2014-10-23 |
| EP2986753A1 (de) | 2016-02-24 |
| KR20150143783A (ko) | 2015-12-23 |
| WO2014170003A1 (de) | 2014-10-23 |
| AR095879A1 (es) | 2015-11-18 |
| JP2016519218A (ja) | 2016-06-30 |
| EP2986753B8 (de) | 2019-06-19 |
| US20160053364A1 (en) | 2016-02-25 |
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Application publication date: 20151216 |
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