CN105122433A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN105122433A CN105122433A CN201480020186.5A CN201480020186A CN105122433A CN 105122433 A CN105122433 A CN 105122433A CN 201480020186 A CN201480020186 A CN 201480020186A CN 105122433 A CN105122433 A CN 105122433A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- semiconductor
- seal
- manufacture method
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 227
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 241000283216 Phocidae Species 0.000 claims description 162
- 238000000034 method Methods 0.000 claims description 82
- 239000000565 sealant Substances 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 description 35
- 238000005520 cutting process Methods 0.000 description 33
- 238000003825 pressing Methods 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000002788 crimping Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000009740 moulding (composite fabrication) Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- -1 such as Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 206010007247 Carbuncle Diseases 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-080601 | 2013-04-08 | ||
JP2013080601A JP2014204033A (ja) | 2013-04-08 | 2013-04-08 | 半導体装置の製造方法 |
PCT/JP2014/057175 WO2014167947A1 (ja) | 2013-04-08 | 2014-03-17 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105122433A true CN105122433A (zh) | 2015-12-02 |
Family
ID=51689361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480020186.5A Pending CN105122433A (zh) | 2013-04-08 | 2014-03-17 | 半导体装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2014204033A (ja) |
KR (1) | KR20150140340A (ja) |
CN (1) | CN105122433A (ja) |
SG (1) | SG11201508204RA (ja) |
TW (1) | TW201448062A (ja) |
WO (1) | WO2014167947A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112020768A (zh) * | 2018-04-24 | 2020-12-01 | 迪思科高科技(欧洲)有限公司 | 用于将保护胶带贴附在半导体晶片上的装置和方法 |
CN112020769A (zh) * | 2018-04-24 | 2020-12-01 | 迪思科高科技(欧洲)有限公司 | 对准装置和对准方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI701097B (zh) * | 2017-09-13 | 2020-08-11 | 新加坡商誠解電子私人有限公司 | 用於以聚合物樹脂鑄模化合物為基底的基板之切割方法及其系統 |
CN108601241B (zh) | 2018-06-14 | 2021-12-24 | 环旭电子股份有限公司 | 一种SiP模组及其制造方法 |
KR20230128565A (ko) * | 2021-02-01 | 2023-09-05 | 나가세케무텍쿠스가부시키가이샤 | 전자 부품 실장 기판의 봉지 방법 및 열경화성 시트 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251347A (ja) * | 1998-03-03 | 1999-09-17 | Hitachi Cable Ltd | 半導体パッケージの製造方法 |
CN1655353A (zh) * | 2004-02-13 | 2005-08-17 | 株式会社东芝 | 叠层mcp及其制造方法 |
US20060128065A1 (en) * | 2003-06-06 | 2006-06-15 | Teiichi Inada | Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method |
JP2008218496A (ja) * | 2007-02-28 | 2008-09-18 | Namics Corp | 封止用樹脂フィルム |
-
2013
- 2013-04-08 JP JP2013080601A patent/JP2014204033A/ja active Pending
-
2014
- 2014-03-17 SG SG11201508204RA patent/SG11201508204RA/en unknown
- 2014-03-17 WO PCT/JP2014/057175 patent/WO2014167947A1/ja active Application Filing
- 2014-03-17 KR KR1020157031649A patent/KR20150140340A/ko not_active Application Discontinuation
- 2014-03-17 CN CN201480020186.5A patent/CN105122433A/zh active Pending
- 2014-04-07 TW TW103112647A patent/TW201448062A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251347A (ja) * | 1998-03-03 | 1999-09-17 | Hitachi Cable Ltd | 半導体パッケージの製造方法 |
US20060128065A1 (en) * | 2003-06-06 | 2006-06-15 | Teiichi Inada | Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method |
CN1655353A (zh) * | 2004-02-13 | 2005-08-17 | 株式会社东芝 | 叠层mcp及其制造方法 |
JP2008218496A (ja) * | 2007-02-28 | 2008-09-18 | Namics Corp | 封止用樹脂フィルム |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112020768A (zh) * | 2018-04-24 | 2020-12-01 | 迪思科高科技(欧洲)有限公司 | 用于将保护胶带贴附在半导体晶片上的装置和方法 |
CN112020769A (zh) * | 2018-04-24 | 2020-12-01 | 迪思科高科技(欧洲)有限公司 | 对准装置和对准方法 |
US11935768B2 (en) | 2018-04-24 | 2024-03-19 | Disco Hi-Tec Europe Gmbh | Device and method for attaching protective tape on semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
JP2014204033A (ja) | 2014-10-27 |
TW201448062A (zh) | 2014-12-16 |
WO2014167947A1 (ja) | 2014-10-16 |
KR20150140340A (ko) | 2015-12-15 |
SG11201508204RA (en) | 2015-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151202 |