CN104953018B - 带高折射率透镜的led模块 - Google Patents

带高折射率透镜的led模块 Download PDF

Info

Publication number
CN104953018B
CN104953018B CN201510392659.0A CN201510392659A CN104953018B CN 104953018 B CN104953018 B CN 104953018B CN 201510392659 A CN201510392659 A CN 201510392659A CN 104953018 B CN104953018 B CN 104953018B
Authority
CN
China
Prior art keywords
array
housing
led
lens
leds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510392659.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN104953018A (zh
Inventor
S.比尔休曾
N.P.王
G.W.恩格
D.孙
Y.韦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Lumileds LLC
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Publication of CN104953018A publication Critical patent/CN104953018A/zh
Application granted granted Critical
Publication of CN104953018B publication Critical patent/CN104953018B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201510392659.0A 2009-09-17 2010-08-20 带高折射率透镜的led模块 Active CN104953018B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/561,617 US9385285B2 (en) 2009-09-17 2009-09-17 LED module with high index lens
US12/561617 2009-09-17
CN201080041382.2A CN102484191B (zh) 2009-09-17 2010-08-20 带高折射率透镜的led模块

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201080041382.2A Division CN102484191B (zh) 2009-09-17 2010-08-20 带高折射率透镜的led模块

Publications (2)

Publication Number Publication Date
CN104953018A CN104953018A (zh) 2015-09-30
CN104953018B true CN104953018B (zh) 2018-09-18

Family

ID=43242886

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510392659.0A Active CN104953018B (zh) 2009-09-17 2010-08-20 带高折射率透镜的led模块
CN201080041382.2A Active CN102484191B (zh) 2009-09-17 2010-08-20 带高折射率透镜的led模块

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201080041382.2A Active CN102484191B (zh) 2009-09-17 2010-08-20 带高折射率透镜的led模块

Country Status (7)

Country Link
US (2) US9385285B2 (enExample)
EP (1) EP2478575B1 (enExample)
JP (3) JP2013505572A (enExample)
KR (1) KR101880767B1 (enExample)
CN (2) CN104953018B (enExample)
TW (2) TWI505518B (enExample)
WO (1) WO2011033407A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780268B2 (en) 2006-04-04 2017-10-03 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
USD738832S1 (en) * 2006-04-04 2015-09-15 Cree, Inc. Light emitting diode (LED) package
KR101865272B1 (ko) * 2011-07-26 2018-06-07 삼성전자주식회사 발광소자 모듈 및 이의 제조방법
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
JP6021485B2 (ja) * 2012-07-17 2016-11-09 株式会社朝日ラバー 光学部材付半導体発光装置
DE102012106982A1 (de) 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Leuchtmittels
US8876330B2 (en) * 2012-11-15 2014-11-04 Illinois Tool Works Inc. Illumination device
WO2015008243A1 (en) * 2013-07-19 2015-01-22 Koninklijke Philips N.V. Pc led with optical element and without substrate carrier
KR101504309B1 (ko) * 2013-08-27 2015-03-20 주식회사 루멘스 발광 소자 패키지 및 이를 갖는 백라이트 유닛
US9608177B2 (en) 2013-08-27 2017-03-28 Lumens Co., Ltd. Light emitting device package and backlight unit having the same
DE102013222703A1 (de) * 2013-11-08 2015-05-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN105940262B (zh) * 2014-01-23 2020-01-07 亮锐控股有限公司 具有自对准预制透镜的发光设备
EP2953176A1 (de) * 2014-06-02 2015-12-09 Swarovski Energy GmbH Beleuchtungsvorrichtung
DE102014110719A1 (de) * 2014-07-29 2016-02-04 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014111278A1 (de) * 2014-08-07 2016-02-11 Osram Opto Semiconductors Gmbh Leuchtdioden-Halter sowie LED-Lampe oder Leuchte zur Beleuchtung
KR101636516B1 (ko) * 2015-03-10 2016-07-06 한국광기술원 렌즈 일체형 발광다이오드 모듈의 제조방법
US9634206B1 (en) * 2015-04-30 2017-04-25 Cse, Inc. LED luminaire
CN108431490B (zh) * 2016-01-12 2020-11-03 亮锐控股有限公司 具有准确光学元件定位的照明布置
US10069051B2 (en) * 2016-04-08 2018-09-04 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
JP6955135B2 (ja) * 2016-10-19 2021-10-27 日亜化学工業株式会社 発光装置およびその製造方法
RU172080U1 (ru) * 2017-01-09 2017-06-28 федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" Корпус светодиода для поверхностного монтажа
KR102528528B1 (ko) * 2018-02-05 2023-05-04 엘지이노텍 주식회사 반도체 소자 패키지 및 이를 포함하는 발광장치
CN109817797A (zh) * 2019-01-23 2019-05-28 佛山市国星光电股份有限公司 Led器件和灯组阵列
DE102019104436A1 (de) * 2019-02-21 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
US11587881B2 (en) 2020-03-09 2023-02-21 Advanced Semiconductor Engineering, Inc. Substrate structure including embedded semiconductor device
US11335646B2 (en) 2020-03-10 2022-05-17 Advanced Semiconductor Engineering, Inc. Substrate structure including embedded semiconductor device and method of manufacturing the same
USD933881S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture having heat sink
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
USD933872S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture
JP7549242B2 (ja) * 2022-01-07 2024-09-11 日亜化学工業株式会社 発光装置
US11751298B2 (en) 2022-01-07 2023-09-05 Nichia Corporation Light-emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1502128A (zh) * 2001-01-31 2004-06-02 ̩ 辐射发射器器件及其制造方法
JP2004349647A (ja) * 2003-05-26 2004-12-09 Matsushita Electric Works Ltd 発光装置及びその製造方法
CN101276860A (zh) * 2007-03-30 2008-10-01 神钛光学科技股份有限公司 光透过率优越散热性良好的发光二极管组装体及组装方法

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454174B1 (en) 1990-04-27 1997-03-05 Omron Corporation Light emitting semiconductor device with Fresnel lens
JPH0555636A (ja) * 1991-08-22 1993-03-05 Sanken Electric Co Ltd 半導体発光装置の製造方法
US5444520A (en) * 1993-05-17 1995-08-22 Kyocera Corporation Image devices
JP3992770B2 (ja) * 1996-11-22 2007-10-17 日亜化学工業株式会社 発光装置及びその形成方法
JP2000216413A (ja) * 1999-01-26 2000-08-04 Apic Yamada Corp Ｂｇａ型透明プラスチック半導体パッケ―ジ
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
JP2001077430A (ja) * 1999-09-02 2001-03-23 Citizen Electronics Co Ltd 発光ダイオード
JP2001350074A (ja) * 2000-06-07 2001-12-21 Azuma Koki:Kk 光ピックアップのレンズ取付構造
JP4432275B2 (ja) * 2000-07-13 2010-03-17 パナソニック電工株式会社 光源装置
JP2002118270A (ja) * 2000-10-06 2002-04-19 Tokai Rika Co Ltd 光デバイス及びその製造方法
US6541800B2 (en) 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
ATE425556T1 (de) * 2001-04-12 2009-03-15 Matsushita Electric Works Ltd Lichtquellenbauelement mit led und verfahren zu seiner herstellung
TW552726B (en) 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
JP2003110146A (ja) 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP3948650B2 (ja) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 発光ダイオード及びその製造方法
JP4009097B2 (ja) * 2001-12-07 2007-11-14 日立電線株式会社 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム
JP2003304000A (ja) * 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 発光ダイオード用パッケージの製造方法
EP1383175A1 (de) 2002-07-16 2004-01-21 Abb Research Ltd. Optisches chipmodul
US6590773B1 (en) * 2002-08-28 2003-07-08 Para Light Electronics Co., Ltd. Heat dissipation device for enhanced power light emitting diodes
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
JP2004147032A (ja) * 2002-10-23 2004-05-20 Citizen Electronics Co Ltd 小型撮像モジュール
JP3910144B2 (ja) 2003-01-06 2007-04-25 シャープ株式会社 半導体発光装置およびその製造方法
CA2517009A1 (en) * 2003-02-26 2004-09-10 Cree, Inc. White light source using emitting diode and phosphor and method of fabrication
JP4341951B2 (ja) 2003-05-07 2009-10-14 シチズン電子株式会社 発光ダイオード及びそのパッケージ構造
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
TWI244226B (en) 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
CN100444415C (zh) 2004-07-06 2008-12-17 旭山光电股份有限公司 气密式高导热芯片封装组件
JP2006066519A (ja) * 2004-08-25 2006-03-09 Kyocera Corp 発光素子用配線基板ならびに発光装置
TWM271254U (en) 2004-09-10 2005-07-21 Sen Tech Co Ltd Heat dissipation base and package structure for light-emitting diode
JP2006114854A (ja) 2004-10-18 2006-04-27 Sharp Corp 半導体発光装置、液晶表示装置用のバックライト装置
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
JP5280686B2 (ja) * 2004-11-19 2013-09-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 無機ハウジングを有する発光装置
JP2007102139A (ja) * 2004-12-03 2007-04-19 Sony Corp 光取出しレンズ、発光素子組立体、面状光源装置、及び、カラー液晶表示装置組立体
JP2006162947A (ja) * 2004-12-07 2006-06-22 Canon Inc 光学装置および光学部材固定方法
JP2006173326A (ja) 2004-12-15 2006-06-29 Nippon Leiz Co Ltd 光源装置
DE602005005223T2 (de) 2005-01-12 2009-03-12 Neobulb Technologies Inc. Beleuchtungsvorrichtung mit Leuchtdioden vom Flip-Chip -Typ und Verfahren zu ihrer Herstellung
US7777247B2 (en) * 2005-01-14 2010-08-17 Cree, Inc. Semiconductor light emitting device mounting substrates including a conductive lead extending therein
KR100665117B1 (ko) 2005-02-17 2007-01-09 삼성전기주식회사 Ｌｅｄ 하우징 및 그 제조 방법
JP2006237141A (ja) 2005-02-23 2006-09-07 Stanley Electric Co Ltd サブマウント型ｌｅｄ
US8076680B2 (en) * 2005-03-11 2011-12-13 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR101161384B1 (ko) * 2005-03-29 2012-07-02 서울반도체 주식회사 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지
WO2006117710A1 (en) 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
JP4329735B2 (ja) * 2005-06-28 2009-09-09 豊田合成株式会社 Ｌｅｄランプユニット
KR100667504B1 (ko) * 2005-06-29 2007-01-10 엘지전자 주식회사 발광 소자의 패키지 및 그의 제조 방법
US8163580B2 (en) * 2005-08-10 2012-04-24 Philips Lumileds Lighting Company Llc Multiple die LED and lens optical system
JP4696780B2 (ja) * 2005-08-24 2011-06-08 パナソニック電工株式会社 Ｌｅｄ照明器具
DE102006000476A1 (de) * 2005-09-22 2007-05-24 Lexedis Lighting Gesmbh Lichtemissionsvorrichtung
DE102006032416A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
JP2007123777A (ja) 2005-10-31 2007-05-17 Sharp Corp 半導体発光装置
EP1970968B1 (en) * 2005-12-12 2016-07-06 Nichia Corporation Light emitting semiconductor device
JP2007203625A (ja) * 2006-02-02 2007-08-16 Fujinon Corp 熱カシメ装置
JP2007214522A (ja) 2006-02-10 2007-08-23 Intekkusu Kk 光源装置及びこれを用いた照明装置
KR100738933B1 (ko) * 2006-03-17 2007-07-12 (주)대신엘이디 조명용 ｌｅｄ 모듈
JP2007335798A (ja) * 2006-06-19 2007-12-27 Toyoda Gosei Co Ltd 発光装置
US7906794B2 (en) * 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
US7503676B2 (en) * 2006-07-26 2009-03-17 Kyocera Corporation Light-emitting device and illuminating apparatus
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
JP4815328B2 (ja) * 2006-11-07 2011-11-16 オリンパス株式会社 熱かしめ方法、レンズ鏡枠の製造方法、及び、熱かしめ装置
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
JP4934546B2 (ja) * 2007-01-10 2012-05-16 古河電気工業株式会社 接続構造及び接続方法
JP2008205138A (ja) * 2007-02-20 2008-09-04 Misuzu Kogyo:Kk 電子光学素子の実装体および電子光学素子の実装体を組み込んだ電子光学機器
JP2008231218A (ja) * 2007-03-20 2008-10-02 Nippon Electric Glass Co Ltd 蛍光体材料及び白色ｌｅｄ
JP2009071186A (ja) * 2007-09-14 2009-04-02 Stanley Electric Co Ltd Ｌｅｄユニット
JP5082710B2 (ja) * 2007-09-19 2012-11-28 日亜化学工業株式会社 発光装置
US20090078950A1 (en) * 2007-09-21 2009-03-26 Tsung-Ting Sun Package structure with replaceable element for light emitting diode
JP2009177106A (ja) * 2007-12-28 2009-08-06 Panasonic Corp 半導体発光装置用セラミックス部材、半導体発光装置用セラミックス部材の製造方法、半導体発光装置および表示装置
TWI462821B (zh) * 2008-01-08 2014-12-01 Ｌｇ伊諾特股份有限公司 鏡片單元，鏡片組件，攝像模組，攝像模組和鏡片組件的製造方法，光學元件的製造方法，和製作光學元件的裝置
JP2009176579A (ja) * 2008-01-24 2009-08-06 Stanley Electric Co Ltd 照明装置
US7928458B2 (en) * 2008-07-15 2011-04-19 Visera Technologies Company Limited Light-emitting diode device and method for fabricating the same
JP5327042B2 (ja) * 2009-03-26 2013-10-30 豊田合成株式会社 Ｌｅｄランプの製造方法
US20110062469A1 (en) 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Molded lens incorporating a window element
US9735198B2 (en) * 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1502128A (zh) * 2001-01-31 2004-06-02 ̩ 辐射发射器器件及其制造方法
JP2004349647A (ja) * 2003-05-26 2004-12-09 Matsushita Electric Works Ltd 発光装置及びその製造方法
CN101276860A (zh) * 2007-03-30 2008-10-01 神钛光学科技股份有限公司 光透过率优越散热性良好的发光二极管组装体及组装方法

Also Published As

Publication number Publication date
WO2011033407A2 (en) 2011-03-24
EP2478575A2 (en) 2012-07-25
TW201119098A (en) 2011-06-01
KR20120079105A (ko) 2012-07-11
JP6041948B2 (ja) 2016-12-14
EP2478575B1 (en) 2019-10-09
CN104953018A (zh) 2015-09-30
US9755124B2 (en) 2017-09-05
US20160240754A1 (en) 2016-08-18
JP2017028328A (ja) 2017-02-02
US20110062471A1 (en) 2011-03-17
JP2016001756A (ja) 2016-01-07
TWI505518B (zh) 2015-10-21
WO2011033407A3 (en) 2011-06-16
JP6310994B2 (ja) 2018-04-11
KR101880767B1 (ko) 2018-07-20
TWI600186B (zh) 2017-09-21
US9385285B2 (en) 2016-07-05
CN102484191A (zh) 2012-05-30
JP2013505572A (ja) 2013-02-14
CN102484191B (zh) 2015-08-12
TW201603333A (zh) 2016-01-16

Similar Documents

Publication Publication Date Title
CN104953018B (zh) 带高折射率透镜的led模块
JP2013505572A5 (enExample)
JP5730680B2 (ja) Ｌｅｄ発光装置とその製造方法
US7833811B2 (en) Side-emitting LED package and method of manufacturing the same
EP2666193B1 (en) Led package comprising encapsulation
US10243122B2 (en) Method of manufacturing light-emitting device
JP6386110B2 (ja) 非対称放射パターンを有する発光素子およびその製造方法
KR20080108564A (ko) 발광 장치 및 그 제조 방법
WO2010095068A2 (en) Compact molded led module
US10678036B2 (en) Optical device and light source module including the same
JP2021002682A (ja) セルフアライン式プリフォームレンズを有する発光デバイス
JP2018061027A (ja) 発光装置の製造方法
JP2012256678A (ja) 半導体発光素子の製造方法
JP2019046929A (ja) 基板の製造方法と発光装置の製造方法
JP7436911B2 (ja) 発光装置
CN115769121B (zh) 用于光学设备的间隔件
JP5298987B2 (ja) 発光装置および発光装置の製造方法
KR20080048903A (ko) 발광 다이오드용 패키지의 제조 방법
JP2021100060A (ja) Ｌｅｄ発光装置
JP2019067860A (ja) 発光装置及びその製造方法
TW201214662A (en) Method for manufacturing LED

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Eindhoven, Netherlands

Co-patentee after: LUMILEDS LLC

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd.

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20200831

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

Co-patentee before: LUMILEDS LLC

Patentee before: KONINKLIJKE PHILIPS N.V.

TR01 Transfer of patent right