CN104953018A - 带高折射率透镜的led模块 - Google Patents
带高折射率透镜的led模块 Download PDFInfo
- Publication number
- CN104953018A CN104953018A CN201510392659.0A CN201510392659A CN104953018A CN 104953018 A CN104953018 A CN 104953018A CN 201510392659 A CN201510392659 A CN 201510392659A CN 104953018 A CN104953018 A CN 104953018A
- Authority
- CN
- China
- Prior art keywords
- array
- led
- lens
- shells
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- 239000003292 glue Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 150000002118 epoxides Chemical class 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- -1 Tempax Substances 0.000 description 3
- 239000005352 borofloat Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000005297 pyrex Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 239000004956 Amodel Substances 0.000 description 2
- 239000004957 Zytel Substances 0.000 description 2
- 229920006102 Zytel® Polymers 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010987 cubic zirconia Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/561617 | 2009-09-17 | ||
US12/561,617 US9385285B2 (en) | 2009-09-17 | 2009-09-17 | LED module with high index lens |
CN201080041382.2A CN102484191B (zh) | 2009-09-17 | 2010-08-20 | 带高折射率透镜的led模块 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080041382.2A Division CN102484191B (zh) | 2009-09-17 | 2010-08-20 | 带高折射率透镜的led模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104953018A true CN104953018A (zh) | 2015-09-30 |
CN104953018B CN104953018B (zh) | 2018-09-18 |
Family
ID=43242886
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080041382.2A Active CN102484191B (zh) | 2009-09-17 | 2010-08-20 | 带高折射率透镜的led模块 |
CN201510392659.0A Active CN104953018B (zh) | 2009-09-17 | 2010-08-20 | 带高折射率透镜的led模块 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080041382.2A Active CN102484191B (zh) | 2009-09-17 | 2010-08-20 | 带高折射率透镜的led模块 |
Country Status (7)
Country | Link |
---|---|
US (2) | US9385285B2 (zh) |
EP (1) | EP2478575B1 (zh) |
JP (3) | JP2013505572A (zh) |
KR (1) | KR101880767B1 (zh) |
CN (2) | CN102484191B (zh) |
TW (2) | TWI505518B (zh) |
WO (1) | WO2011033407A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108431490A (zh) * | 2016-01-12 | 2018-08-21 | 亮锐控股有限公司 | 具有准确光学元件定位的照明布置 |
CN109817797A (zh) * | 2019-01-23 | 2019-05-28 | 佛山市国星光电股份有限公司 | Led器件和灯组阵列 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD738832S1 (en) * | 2006-04-04 | 2015-09-15 | Cree, Inc. | Light emitting diode (LED) package |
US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
KR101865272B1 (ko) * | 2011-07-26 | 2018-06-07 | 삼성전자주식회사 | 발광소자 모듈 및 이의 제조방법 |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
JP6021485B2 (ja) * | 2012-07-17 | 2016-11-09 | 株式会社朝日ラバー | 光学部材付半導体発光装置 |
DE102012106982A1 (de) | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Leuchtmittels |
US8876330B2 (en) * | 2012-11-15 | 2014-11-04 | Illinois Tool Works Inc. | Illumination device |
KR20160032236A (ko) * | 2013-07-19 | 2016-03-23 | 코닌클리케 필립스 엔.브이. | 광학 요소를 가지며 기판 캐리어를 갖지 않는 pc led |
US9608177B2 (en) | 2013-08-27 | 2017-03-28 | Lumens Co., Ltd. | Light emitting device package and backlight unit having the same |
KR101504309B1 (ko) * | 2013-08-27 | 2015-03-20 | 주식회사 루멘스 | 발광 소자 패키지 및 이를 갖는 백라이트 유닛 |
DE102013222703A1 (de) * | 2013-11-08 | 2015-05-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
EP3097351A1 (en) | 2014-01-23 | 2016-11-30 | Koninklijke Philips N.V. | Light emitting device with self-aligning preformed lens |
EP2953176A1 (de) * | 2014-06-02 | 2015-12-09 | Swarovski Energy GmbH | Beleuchtungsvorrichtung |
DE102014110719A1 (de) * | 2014-07-29 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102014111278A1 (de) * | 2014-08-07 | 2016-02-11 | Osram Opto Semiconductors Gmbh | Leuchtdioden-Halter sowie LED-Lampe oder Leuchte zur Beleuchtung |
KR101636516B1 (ko) * | 2015-03-10 | 2016-07-06 | 한국광기술원 | 렌즈 일체형 발광다이오드 모듈의 제조방법 |
US9634206B1 (en) * | 2015-04-30 | 2017-04-25 | Cse, Inc. | LED luminaire |
US10069051B2 (en) | 2016-04-08 | 2018-09-04 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
JP6955135B2 (ja) | 2016-10-19 | 2021-10-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
RU172080U1 (ru) * | 2017-01-09 | 2017-06-28 | федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" | Корпус светодиода для поверхностного монтажа |
KR102528528B1 (ko) * | 2018-02-05 | 2023-05-04 | 엘지이노텍 주식회사 | 반도체 소자 패키지 및 이를 포함하는 발광장치 |
DE102019104436A1 (de) * | 2019-02-21 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
US11587881B2 (en) | 2020-03-09 | 2023-02-21 | Advanced Semiconductor Engineering, Inc. | Substrate structure including embedded semiconductor device |
US11335646B2 (en) | 2020-03-10 | 2022-05-17 | Advanced Semiconductor Engineering, Inc. | Substrate structure including embedded semiconductor device and method of manufacturing the same |
US11032976B1 (en) | 2020-03-16 | 2021-06-15 | Hgci, Inc. | Light fixture for indoor grow application and components thereof |
USD933881S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture having heat sink |
USD933872S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture |
US11751298B2 (en) | 2022-01-07 | 2023-09-05 | Nichia Corporation | Light-emitting device |
JP7549242B2 (ja) * | 2022-01-07 | 2024-09-11 | 日亜化学工業株式会社 | 発光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1502128A (zh) * | 2001-01-31 | 2004-06-02 | ̩ | 辐射发射器器件及其制造方法 |
JP2004349647A (ja) * | 2003-05-26 | 2004-12-09 | Matsushita Electric Works Ltd | 発光装置及びその製造方法 |
US20070075306A1 (en) * | 2005-09-22 | 2007-04-05 | Toyoda Gosei Co., Ltd. | Light emitting device |
CN101276860A (zh) * | 2007-03-30 | 2008-10-01 | 神钛光学科技股份有限公司 | 光透过率优越散热性良好的发光二极管组装体及组装方法 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296724A (en) | 1990-04-27 | 1994-03-22 | Omron Corporation | Light emitting semiconductor device having an optical element |
JPH0555636A (ja) * | 1991-08-22 | 1993-03-05 | Sanken Electric Co Ltd | 半導体発光装置の製造方法 |
US5444520A (en) | 1993-05-17 | 1995-08-22 | Kyocera Corporation | Image devices |
JP3992770B2 (ja) * | 1996-11-22 | 2007-10-17 | 日亜化学工業株式会社 | 発光装置及びその形成方法 |
JP2000216413A (ja) * | 1999-01-26 | 2000-08-04 | Apic Yamada Corp | Bga型透明プラスチック半導体パッケ―ジ |
US6521916B2 (en) * | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
JP2001077430A (ja) * | 1999-09-02 | 2001-03-23 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2001350074A (ja) * | 2000-06-07 | 2001-12-21 | Azuma Koki:Kk | 光ピックアップのレンズ取付構造 |
JP4432275B2 (ja) * | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | 光源装置 |
JP2002118270A (ja) * | 2000-10-06 | 2002-04-19 | Tokai Rika Co Ltd | 光デバイス及びその製造方法 |
US6541800B2 (en) | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
EP1387412B1 (en) * | 2001-04-12 | 2009-03-11 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
JP2003110146A (ja) | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP3948650B2 (ja) | 2001-10-09 | 2007-07-25 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 発光ダイオード及びその製造方法 |
JP4009097B2 (ja) * | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP2003304000A (ja) * | 2002-04-08 | 2003-10-24 | Citizen Electronics Co Ltd | 発光ダイオード用パッケージの製造方法 |
EP1383175A1 (de) | 2002-07-16 | 2004-01-21 | Abb Research Ltd. | Optisches chipmodul |
US6590773B1 (en) * | 2002-08-28 | 2003-07-08 | Para Light Electronics Co., Ltd. | Heat dissipation device for enhanced power light emitting diodes |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
JP2004147032A (ja) * | 2002-10-23 | 2004-05-20 | Citizen Electronics Co Ltd | 小型撮像モジュール |
JP3910144B2 (ja) | 2003-01-06 | 2007-04-25 | シャープ株式会社 | 半導体発光装置およびその製造方法 |
MY142684A (en) * | 2003-02-26 | 2010-12-31 | Cree Inc | Composite white light source and method for fabricating |
JP4341951B2 (ja) | 2003-05-07 | 2009-10-14 | シチズン電子株式会社 | 発光ダイオード及びそのパッケージ構造 |
JP2005093712A (ja) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
TWI244226B (en) | 2004-11-05 | 2005-11-21 | Chen Jen Shian | Manufacturing method of flip-chip light-emitting device |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
CN100444415C (zh) | 2004-07-06 | 2008-12-17 | 旭山光电股份有限公司 | 气密式高导热芯片封装组件 |
JP2006066519A (ja) * | 2004-08-25 | 2006-03-09 | Kyocera Corp | 発光素子用配線基板ならびに発光装置 |
TWM271254U (en) | 2004-09-10 | 2005-07-21 | Sen Tech Co Ltd | Heat dissipation base and package structure for light-emitting diode |
JP2006114854A (ja) | 2004-10-18 | 2006-04-27 | Sharp Corp | 半導体発光装置、液晶表示装置用のバックライト装置 |
US7452737B2 (en) * | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
EP1815540B1 (en) * | 2004-11-19 | 2019-07-31 | Signify Holding B.V. | Light-emitting device with inorganic housing |
JP2007102139A (ja) * | 2004-12-03 | 2007-04-19 | Sony Corp | 光取出しレンズ、発光素子組立体、面状光源装置、及び、カラー液晶表示装置組立体 |
JP2006162947A (ja) * | 2004-12-07 | 2006-06-22 | Canon Inc | 光学装置および光学部材固定方法 |
JP2006173326A (ja) | 2004-12-15 | 2006-06-29 | Nippon Leiz Co Ltd | 光源装置 |
DE602005005223T2 (de) | 2005-01-12 | 2009-03-12 | Neobulb Technologies Inc. | Beleuchtungsvorrichtung mit Leuchtdioden vom Flip-Chip -Typ und Verfahren zu ihrer Herstellung |
US7777247B2 (en) * | 2005-01-14 | 2010-08-17 | Cree, Inc. | Semiconductor light emitting device mounting substrates including a conductive lead extending therein |
KR100665117B1 (ko) | 2005-02-17 | 2007-01-09 | 삼성전기주식회사 | Led 하우징 및 그 제조 방법 |
JP2006237141A (ja) | 2005-02-23 | 2006-09-07 | Stanley Electric Co Ltd | サブマウント型led |
EP2280430B1 (en) | 2005-03-11 | 2020-01-01 | Seoul Semiconductor Co., Ltd. | LED package having an array of light emitting cells coupled in series |
KR101161384B1 (ko) * | 2005-03-29 | 2012-07-02 | 서울반도체 주식회사 | 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지 |
US20080203911A1 (en) | 2005-04-29 | 2008-08-28 | Koninklijke Philips Electronics N.V. | Light Source With Glass Housing |
JP4329735B2 (ja) * | 2005-06-28 | 2009-09-09 | 豊田合成株式会社 | Ledランプユニット |
KR100667504B1 (ko) * | 2005-06-29 | 2007-01-10 | 엘지전자 주식회사 | 발광 소자의 패키지 및 그의 제조 방법 |
US8163580B2 (en) * | 2005-08-10 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Multiple die LED and lens optical system |
JP4696780B2 (ja) * | 2005-08-24 | 2011-06-08 | パナソニック電工株式会社 | Led照明器具 |
DE102006032416A1 (de) | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
JP2007123777A (ja) | 2005-10-31 | 2007-05-17 | Sharp Corp | 半導体発光装置 |
KR101101476B1 (ko) * | 2005-12-12 | 2012-01-03 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 및 반도체 장치와 그 제조 방법 |
JP2007203625A (ja) * | 2006-02-02 | 2007-08-16 | Fujinon Corp | 熱カシメ装置 |
JP2007214522A (ja) | 2006-02-10 | 2007-08-23 | Intekkusu Kk | 光源装置及びこれを用いた照明装置 |
KR100738933B1 (ko) * | 2006-03-17 | 2007-07-12 | (주)대신엘이디 | 조명용 led 모듈 |
JP2007335798A (ja) * | 2006-06-19 | 2007-12-27 | Toyoda Gosei Co Ltd | 発光装置 |
US7906794B2 (en) * | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
US7503676B2 (en) * | 2006-07-26 | 2009-03-17 | Kyocera Corporation | Light-emitting device and illuminating apparatus |
US8092735B2 (en) | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
JP4815328B2 (ja) * | 2006-11-07 | 2011-11-16 | オリンパス株式会社 | 熱かしめ方法、レンズ鏡枠の製造方法、及び、熱かしめ装置 |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
JP4934546B2 (ja) * | 2007-01-10 | 2012-05-16 | 古河電気工業株式会社 | 接続構造及び接続方法 |
JP2008205138A (ja) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | 電子光学素子の実装体および電子光学素子の実装体を組み込んだ電子光学機器 |
JP2008231218A (ja) * | 2007-03-20 | 2008-10-02 | Nippon Electric Glass Co Ltd | 蛍光体材料及び白色led |
JP2009071186A (ja) * | 2007-09-14 | 2009-04-02 | Stanley Electric Co Ltd | Ledユニット |
JP5082710B2 (ja) * | 2007-09-19 | 2012-11-28 | 日亜化学工業株式会社 | 発光装置 |
US20090078950A1 (en) | 2007-09-21 | 2009-03-26 | Tsung-Ting Sun | Package structure with replaceable element for light emitting diode |
JP2009177106A (ja) * | 2007-12-28 | 2009-08-06 | Panasonic Corp | 半導体発光装置用セラミックス部材、半導体発光装置用セラミックス部材の製造方法、半導体発光装置および表示装置 |
CN101909865A (zh) * | 2008-01-08 | 2010-12-08 | Lg伊诺特有限公司 | 透镜单元、透镜组件、相机模块、相机模块和透镜组件的制造方法、光学部件的制造方法以及光学部件的制造设备 |
JP2009176579A (ja) * | 2008-01-24 | 2009-08-06 | Stanley Electric Co Ltd | 照明装置 |
US7928458B2 (en) * | 2008-07-15 | 2011-04-19 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
JP5327042B2 (ja) * | 2009-03-26 | 2013-10-30 | 豊田合成株式会社 | Ledランプの製造方法 |
US20110062469A1 (en) | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
US9735198B2 (en) * | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
-
2009
- 2009-09-17 US US12/561,617 patent/US9385285B2/en active Active
-
2010
- 2010-08-20 EP EP10757835.3A patent/EP2478575B1/en active Active
- 2010-08-20 WO PCT/IB2010/053772 patent/WO2011033407A2/en active Application Filing
- 2010-08-20 KR KR1020127009716A patent/KR101880767B1/ko active IP Right Grant
- 2010-08-20 CN CN201080041382.2A patent/CN102484191B/zh active Active
- 2010-08-20 JP JP2012529369A patent/JP2013505572A/ja active Pending
- 2010-08-20 CN CN201510392659.0A patent/CN104953018B/zh active Active
- 2010-08-23 TW TW099128119A patent/TWI505518B/zh active
- 2010-08-23 TW TW104129079A patent/TWI600186B/zh active
-
2015
- 2015-09-01 JP JP2015172146A patent/JP6041948B2/ja active Active
-
2016
- 2016-03-22 US US15/077,255 patent/US9755124B2/en active Active
- 2016-11-08 JP JP2016217826A patent/JP6310994B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1502128A (zh) * | 2001-01-31 | 2004-06-02 | ̩ | 辐射发射器器件及其制造方法 |
JP2004349647A (ja) * | 2003-05-26 | 2004-12-09 | Matsushita Electric Works Ltd | 発光装置及びその製造方法 |
US20070075306A1 (en) * | 2005-09-22 | 2007-04-05 | Toyoda Gosei Co., Ltd. | Light emitting device |
CN101276860A (zh) * | 2007-03-30 | 2008-10-01 | 神钛光学科技股份有限公司 | 光透过率优越散热性良好的发光二极管组装体及组装方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108431490A (zh) * | 2016-01-12 | 2018-08-21 | 亮锐控股有限公司 | 具有准确光学元件定位的照明布置 |
CN109817797A (zh) * | 2019-01-23 | 2019-05-28 | 佛山市国星光电股份有限公司 | Led器件和灯组阵列 |
Also Published As
Publication number | Publication date |
---|---|
TWI600186B (zh) | 2017-09-21 |
JP6041948B2 (ja) | 2016-12-14 |
JP2017028328A (ja) | 2017-02-02 |
WO2011033407A3 (en) | 2011-06-16 |
TWI505518B (zh) | 2015-10-21 |
US9755124B2 (en) | 2017-09-05 |
EP2478575A2 (en) | 2012-07-25 |
CN102484191B (zh) | 2015-08-12 |
TW201119098A (en) | 2011-06-01 |
JP6310994B2 (ja) | 2018-04-11 |
US9385285B2 (en) | 2016-07-05 |
US20160240754A1 (en) | 2016-08-18 |
KR101880767B1 (ko) | 2018-07-20 |
CN102484191A (zh) | 2012-05-30 |
WO2011033407A2 (en) | 2011-03-24 |
KR20120079105A (ko) | 2012-07-11 |
EP2478575B1 (en) | 2019-10-09 |
TW201603333A (zh) | 2016-01-16 |
JP2013505572A (ja) | 2013-02-14 |
JP2016001756A (ja) | 2016-01-07 |
US20110062471A1 (en) | 2011-03-17 |
CN104953018B (zh) | 2018-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102484191B (zh) | 带高折射率透镜的led模块 | |
EP2258001B1 (en) | Light emitting device package | |
US7833811B2 (en) | Side-emitting LED package and method of manufacturing the same | |
US7777247B2 (en) | Semiconductor light emitting device mounting substrates including a conductive lead extending therein | |
US20040183081A1 (en) | Light emitting diode package with self dosing feature and methods of forming same | |
JP2013505572A5 (zh) | ||
US20100207140A1 (en) | Compact molded led module | |
WO2010052621A1 (en) | Overmolded phosphor lens for an led | |
JP2009518669A (ja) | 光学部品、その製造方法、及び光学部品を有する複合装置 | |
US9810382B2 (en) | Light emitting module having lens | |
US20230102235A1 (en) | Method of manufacturing lens and light emitting device | |
KR20200026090A (ko) | 렌즈 및 발광 장치, 및 그들의 제조 방법 | |
KR102476140B1 (ko) | 광학 소자 및 이를 포함하는 광원 모듈 | |
JP7436911B2 (ja) | 発光装置 | |
US9204558B2 (en) | Method for manufacturing packaged light emitting diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Eindhoven, Netherlands Co-patentee after: LUMILEDS LLC Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd. Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200831 Address after: Holland Schiphol Patentee after: KONINKLIJKE PHILIPS NV Address before: Eindhoven, Netherlands Co-patentee before: LUMILEDS LLC Patentee before: KONINKLIJKE PHILIPS N.V. |