CN104900712A - Tft基板结构的制作方法及tft基板结构 - Google Patents

Tft基板结构的制作方法及tft基板结构 Download PDF

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CN104900712A
CN104900712A CN201510313750.9A CN201510313750A CN104900712A CN 104900712 A CN104900712 A CN 104900712A CN 201510313750 A CN201510313750 A CN 201510313750A CN 104900712 A CN104900712 A CN 104900712A
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plane
tft substrate
polysilicon layer
substrate structure
grid
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郭文帅
明星
申智渊
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201510313750.9A priority Critical patent/CN104900712A/zh
Priority to US14/778,606 priority patent/US20170170202A1/en
Priority to PCT/CN2015/082163 priority patent/WO2016197404A1/zh
Publication of CN104900712A publication Critical patent/CN104900712A/zh
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Abstract

本发明提供一种TFT基板结构的制作方法及TFT基板结构。本发明的TFT基板结构的制作方法，在制作栅极时通过调整蚀刻的参数，使栅极两侧形成斜面，并以栅极作为光罩，对多晶硅层进行离子注入，同时在多晶硅层形成n型重掺杂区和n型轻掺杂区，增加了阻值，分散了电极附近的强电场，避免了因局部强电场的存在而发生的热载流子效应对器件特性造成的影响，节省了单独形成n型轻掺杂区的制程，提升了生成效率，降低了生产成本。本发明的TFT基板结构，多晶硅层包括位于两侧的n型重掺杂区及位于多晶硅层的沟道区与n型重掺杂区之间的n型轻掺杂区，避免了局部强电场的产生，消除了热载流子对器件特性的影响。

Description

TFT基板结构的制作方法及TFT基板结构
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板结构的制作方法及TFT基板结构。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
通常液晶显示装置包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlight module)。其中，液晶面板的结构主要是由一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、一彩色滤光片基板(Color Filter，CF)、以及配置于两基板间的液晶层(LiquidCrystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
随着移动显示技术在生活中的应用起到的作用越来越大，移动显示技术向更高画质、更高精细程度、更轻薄和更低功耗的方向发展，在器件上就要求尺寸越来越小，器件内部局部区域的电场强度也因此而增强，特别是在漏极附近存在强电场。载流子在强电场的作用下获得较高的能量成为热载流子。热载流子对器件性能的影响主要表现在以下两个方面：
(1)热载流子越过绝缘层注入到氧化层，不断积累，改变阈值电压，影响器件寿命；
(2)在漏极附近的耗尽区与晶格碰撞产生新的电子空穴对，以金属氧化物半导体(Metal Oxid Semiconductor，MOS)场效应晶体管为例，碰撞产生的电子形成附加的漏电流，空穴则被衬底收集，形成衬底电流，使总电流成为饱和漏电流与衬底电流之和。热载流子效应是限制器件最高工作电压的基本因素之一。
为了解决热载流子的出现对器件特性的影响，技术人员想出了各种办法来避免局部强电场的产生。请参阅图1，为一种现有的TFT基板结构的制作方法的示意图。该TFT基板结构包括基板100、设于基板100上的缓冲层200、设于缓冲层200上的多晶硅层300，该方法利用光阻层600为掩模，对多晶硅层300进行离子注入，对应栅极的两侧，在多晶硅层300的沟道区330与位于两侧的n型重掺杂区310之间形成对称的两n型轻掺杂区(LDD)320，以分散电极附近的强电场，减少热载流子的产生。但这样就意味着需要针对所述n型轻掺杂区320的制作进行单独的光罩设计及一次光刻制程，需要花费大量的成本。
发明内容
本发明的目的在于提供一种TFT基板结构的制作方法，可同时在多晶硅层形成n型重掺杂区和n型轻掺杂区，以增加阻值，分散电极附近的强电场，避免因局部强电场的存在而发生的热载流子效应对器件特性造成影响。
本发明的目的还在于提供一种TFT基板结构，多晶硅层中包括位于两侧的n型重掺杂区及位于多晶硅层的沟道区与n型重掺杂区之间的n型轻掺杂区，可避免局部强电场的产生，消除热载流子对器件特性的影响。
为实现上述目的，本发明提供一种TFT基板结构的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上沉积缓冲层；
步骤2、在所述缓冲层上沉积多晶硅层，并在所述多晶硅层上沉积栅极绝缘层；
步骤3、在所述栅极绝缘层上沉积金属层，并对所述金属层进行图案化处理，形成对应于所述多晶硅层中部的栅极；
所述栅极为梯形体结构，包括上底面、下底面、连接于所述上底面与下底面之间且相对设置的第一斜面与第二斜面；所述上底面的面积小于所述下底面的面积；
步骤4、以所述栅极为光罩，采用离子注入工艺对所述多晶硅层进行n型掺杂，在所述多晶硅层两侧没有被栅极覆盖的区域形成n型重掺杂区，在所述多晶硅层上对应于所述栅极的第一斜面、第二斜面的区域形成第一n型轻掺杂区、第二n型轻掺杂区，在所述多晶硅层中部对应于所述栅极的上底面的区域形成未掺杂的沟道区。
所述栅极的厚度为
所述步骤3通过干法蚀刻或湿法蚀刻形成第一斜面与第二斜面。
所述第一斜面与下底面之间形成的夹角的角度为10°～60°；所述第二斜面与下底面之间形成的夹角的角度为10°～60°。
所述第一、第二n型轻掺杂区中的n型离子浓度为从外侧向内侧呈线性递减分布。
所述缓冲层、及栅极绝缘层的材料为氧化硅、氮化硅、或二者的组合；所述栅极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
本发明还提供一种TFT基板结构，包括基板、设于所述基板上的缓冲层、设于所述缓冲层上的多晶硅层、设于所述多晶硅层上的栅极绝缘层、及设于所述栅极绝缘层上且对应于所述多晶硅层中部的栅极；
所述栅极为梯形体结构，包括上底面、下底面、连接于所述上底面与下底面之间且相对设置的第一斜面与第二斜面；所述上底面的面积小于所述下底面的面积；
所述多晶硅层包括位于中部且对应于所述上底面的未掺杂的沟道区，位于所述沟道区两侧且分别对应于所述第一斜面、第二斜面的第一n型轻掺杂区、第二n型轻掺杂区，及分别位于所述第一n型轻掺杂区与第二n型轻掺杂区外侧的两n型重掺杂区。
所述栅极的厚度为所述第一斜面与下底面之间形成的夹角的角度为10°～60°；所述第二斜面与下底面之间形成的夹角的角度为10°～60°。
所述第一、第二n型轻掺杂区中的n型离子浓度为从外侧向内侧呈线性递减分布。
所述缓冲层、及栅极绝缘层的材料为氧化硅、氮化硅、或二者的组合；所述栅极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
本发明的有益效果：本发明的TFT基板结构的制作方法，在制作栅极时通过调整蚀刻的参数，使栅极两侧形成斜面，并以栅极作为光罩，对多晶硅层进行离子注入，同时在多晶硅层形成n型重掺杂区和n型轻掺杂区，增加了阻值，分散了电极附近的强电场，避免了因局部强电场的存在而发生的热载流子效应对器件特性造成的影响，以及轻掺杂区不对称对器件的造成的其他影响，节省了单独形成n型轻掺杂区的制程，提升了生成效率，降低了生产成本。本发明的TFT基板结构，多晶硅层中包括位于两侧的n型重掺杂区及位于多晶硅层的沟道区与n型重掺杂区之间的n型轻掺杂区，避免了局部强电场的产生，消除了热载流子对器件特性的影响。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的TFT基板结构的制作方法的示意图；
图2为本发明的TFT基板结构的制作方法的流程图；
图3为本发明的TFT基板结构的制作方法的步骤1的示意图；
图4为本发明的TFT基板结构的制作方法的步骤2的示意图；
图5为本发明的TFT基板结构的制作方法的步骤3的示意图；
图6为本发明的TFT基板结构的制作方法的步骤4的示意图；
图7为本发明的TFT基板结构的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种TFT基板结构的制作方法，包括如下步骤：
步骤1、如图3所示，提供基板1，在所述基板1上沉积缓冲层2。
具体的，所述基板1可以是玻璃基板或塑料基板，所述缓冲层2的材料可以是氧化硅(SiOx)、氮化硅(SiNx)、或二者的组合。
步骤2、如图4所示，在所述缓冲层2上沉积多晶硅(Poly-Si)层3，并在所述多晶硅层3上沉积栅极绝缘层4。
具体的，所述栅极绝缘层4的材料可以是氧化硅、氮化硅、或二者的组合。
步骤3、如图5所示，在所述栅极绝缘层4上沉积金属层，并对所述金属层进行图案化处理，形成对应于所述多晶硅层3中部的栅极5。
所述栅极5为梯形体结构，包括上底面51、下底面52、连接于所述上底面51与下底面52之间且相对设置的第一斜面53与第二斜面54；所述上底面51的面积小于所述下底面52的面积。
具体的，所述第一斜面53与下底面52之间形成的夹角的角度为10°～60°；所述第二斜面54与下底面52之间形成的夹角的角度为10°～60°。
优选的，所述第一斜面53、第二斜面54与下底面52之间形成的夹角的角度相同。
具体的，所述栅极5的材料可以是钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合。
具体的，通过干法蚀刻(Dry Etch)或湿法蚀刻(Wet Etch)形成所述第一斜面53与第二斜面54，并通过调整蚀刻工艺的参数来调整所述第一斜面53、第二斜面54与所述下底面52之间形成的夹角的角度。
优选的，所述栅极5的厚度为
步骤4、如图6所示，以所述栅极5为光罩，采用离子注入工艺对所述多晶硅层3进行n型掺杂，在所述多晶硅层3两侧没有被栅极5覆盖的区域上形成n型重掺杂区31，在所述多晶硅层3上对应于所述栅极5的第一斜面53、第二斜面54的区域形成第一n型轻掺杂区32、及第二n型轻掺杂区33，在所述多晶硅层3中部对应于所述栅极5的上底面51的区域形成未掺杂的沟道区34。
由于所述栅极5的两侧为平缓的斜面，因此在采用离子注入工艺对所述多晶硅层3进行n型掺杂的过程中，在没有栅极5覆盖的区域形成n型重掺杂区31，由于所述栅极5位于第一斜面53与第二斜面54处的厚度较薄，从而n型离子可以穿过所述栅极5，在所述多晶硅层3上被栅极5的第一斜面53、第二斜面54覆盖的区域形成n型离子浓度呈线性分布的第一、第二n型轻掺杂区32、33。所述第一、第二n型轻掺杂区32、33增加了阻值，分散了电极附近的强电场，避免了因局部强电场的存在而发生的热载流子效应对器件特性造成的影响。
进一步的，由于所述栅极5位于第一斜面53与下底面52之间的厚度从外侧向内侧呈线性递增，因此进行n型掺杂时，n型离子注入的难度也从外向内逐渐递增，从而最终得到的第一n型轻掺杂区32中的n型离子浓度为从外侧向内侧呈线性递减分布。
同理，由于所述栅极5位于第二斜面54与下底面52之间的厚度从外侧向内侧呈线性递增，因此进行n型掺杂时，n型离子注入的难度也从外向内逐渐递增，从而最终得到的第二n型轻掺杂区33中的n型离子浓度为从外侧向内侧呈线性递减分布。
具体的，所述步骤4得到的n型重掺杂区31中的n型离子浓度Cn+的范围为1014～1015ions/cm3；所述第一n型轻掺杂区32、第二n型轻掺杂区33中的n型离子浓度Cn-的范围为Cn+＞Cn-＞0。
本发明的TFT基板结构的制作方法，通过在沟道的两侧分别设置两个n型轻掺杂区，避免了轻掺杂区不对称对器件的造成的其他影响。
上述TFT基板结构的制作方法，在制作栅极时通过调整蚀刻工艺的参数，使栅极两侧形成斜面，并以栅极作为光罩，对多晶硅层进行离子注入，通过一道制程同时在多晶硅层形成n型重掺杂区和线性离子浓度的n型轻掺杂区，增加了阻值，分散了电极附近的强电场，避免了因局部强电场的存在而发生的热载流子效应对器件特性造成的影响，以及轻掺杂区不对称对器件的造成的其他影响，节省了单独形成n型轻掺杂区的制程，提升了生成效率，降低了生产成本。
请参阅图7，本发明还提供一种TFT基板结构，包括基板1、设于所述基板1上的缓冲层2、设于所述缓冲层2上的多晶硅层3、设于所述多晶硅层3上的栅极绝缘层4、及设于所述栅极绝缘层4上且对应于所述多晶硅层3中部的栅极5。
所述栅极5为梯形体结构，包括上底面51、下底面52、连接于所述上底面51与下底面52之间且相对设置的第一斜面53与第二斜面54；所述上底面51的面积小于所述下底面52的面积。
所述多晶硅层3包括位于中部且对应于所述上底面51的未掺杂的沟道区34，位于所述沟道区34两侧且分别对应于所述第一斜面53、第二斜面54的第一n型轻掺杂区32、第二n型轻掺杂区33，及分别位于所述第一n型轻掺杂区32与第二n型轻掺杂区33外侧的两n型重掺杂区31。
优选的，所述栅极5的厚度为
具体的，所述第一斜面53与下底面52之间形成的夹角的角度为10°～60°；所述第二斜面54与下底面52之间形成的夹角的角度为10°～60°。
优选的，所述第一斜面53、第二斜面54与下底面52之间形成的夹角的角度相同。
具体的，所述第一、第二n型轻掺杂区32、33中的n型离子浓度呈线性分布。
进一步的，所述第一、第二n型轻掺杂区32、33中的n型离子浓度为从外侧向内侧呈线性递减分布。
具体的，所述n型重掺杂区31中的n型离子浓度Cn+的范围为1014～1015ions/cm3；所述第一n型轻掺杂区32、第二n型轻掺杂区33中的n型离子浓度Cn-的范围为Cn+＞Cn-＞0。
具体的，所述缓冲层2、及栅极绝缘层4的材料为氧化硅、氮化硅、或二者的组合；所述栅极5的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
上述TFT基板结构，多晶硅层中包括位于两侧的n型重掺杂区及位于多晶硅层的沟道区与n型重掺杂区之间的n型轻掺杂区，避免了局部强电场的产生，消除了热载流子对器件特性的影响。
综上所述，本发明的TFT基板结构的制作方法，在制作栅极时通过调整蚀刻的参数，使栅极两侧形成斜面，并以栅极作为光罩，对多晶硅层进行离子注入，通过一道制程同时在多晶硅层上形成n型重掺杂区和n型轻掺杂区，增加了阻值，分散了电极附近的强电场，避免了因局部强电场的存在而发生的热载流子效应对器件特性造成的影响，以及轻掺杂区不对称对器件的造成的其他影响；节省了单独形成n型轻掺杂区的制程，提升了生成效率，降低了生产成本。本发明的TFT基板结构，多晶硅层中包括位于两侧的n型重掺杂区及位于多晶硅层的沟道区与n型重掺杂区之间的n型轻掺杂区，避免了局部强电场的产生，消除了热载流子对器件特性的影响。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT基板结构的制作方法，其特征在于，包括如下步骤：
步骤1、提供基板(1)，在所述基板(1)上沉积缓冲层(2)；
步骤2、在所述缓冲层(2)上沉积多晶硅层(3)，并在所述多晶硅层(3)上沉积栅极绝缘层(4)；
步骤3、在所述栅极绝缘层(4)上沉积金属层，并对所述金属层进行图案化处理，形成对应于所述多晶硅层(3)中部的栅极(5)；
所述栅极(5)为梯形体结构，包括上底面(51)、下底面(52)、连接于所述上底面(51)与下底面(52)之间且相对设置的第一斜面(53)与第二斜面(54)；所述上底面(51)的面积小于所述下底面(52)的面积；
步骤4、以所述栅极(5)为光罩，采用离子注入工艺对所述多晶硅层(3)进行n型掺杂，在所述多晶硅层(3)两侧没有被栅极(5)覆盖的区域形成n型重掺杂区(31)，在所述多晶硅层(3)上对应于所述栅极(5)的第一斜面(53)、第二斜面(54)的区域形成第一n型轻掺杂区(32)、第二n型轻掺杂区(33)，在所述多晶硅层(3)中部对应于所述栅极(5)的上底面(51)的区域形成未掺杂的沟道区(34)。
2.如权利要求1所述的TFT基板结构的制作方法，其特征在于，所述栅极(5)的厚度为
3.如权利要求1所述的TFT基板结构的制作方法，其特征在于，所述步骤3通过干法蚀刻或湿法蚀刻形成第一斜面(53)与第二斜面(54)。
4.如权利要求1所述的TFT基板结构的制作方法，其特征在于，所述第一斜面(53)与下底面(52)之间形成的夹角的角度为10°～60°；所述第二斜面(54)与下底面(52)之间形成的夹角的角度为10°～60°。
5.如权利要求1所述的TFT基板结构的制作方法，其特征在于，所述第一、第二n型轻掺杂区(32、33)中的n型离子浓度为从外侧向内侧呈线性递减分布。
6.如权利要求1所述的TFT基板结构的制作方法，其特征在于，所述缓冲层(2)、及栅极绝缘层(4)的材料为氧化硅、氮化硅、或二者的组合；所述栅极(5)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
7.一种TFT基板结构，其特征在于，包括基板(1)、设于所述基板(1)上的缓冲层(2)、设于所述缓冲层(2)上的多晶硅层(3)、设于所述多晶硅层(3)上的栅极绝缘层(4)、及设于所述栅极绝缘层(4)上且对应于所述多晶硅层(3)中部的栅极(5)；
所述栅极(5)为梯形体结构，包括上底面(51)、下底面(52)、连接于所述上底面(51)与下底面(52)之间且相对设置的第一斜面(53)与第二斜面(54)；所述上底面(51)的面积小于所述下底面(52)的面积；
所述多晶硅层(3)包括位于中部且对应于所述上底面(51)的未掺杂的沟道区(34)，位于所述沟道区(34)两侧且分别对应于所述第一斜面(53)、第二斜面(54)的第一n型轻掺杂区(32)、第二n型轻掺杂区(33)，及分别位于所述第一n型轻掺杂区(32)与第二n型轻掺杂区(33)外侧的两n型重掺杂区(31)。
8.如权利要求7所述的TFT基板结构，其特征在于，所述栅极(5)的厚度为所述第一斜面(53)与下底面(52)之间形成的夹角的角度为10°～60°；所述第二斜面(54)与下底面(52)之间形成的夹角的角度为10°～60°。
9.如权利要求7所述的TFT基板结构的制作方法，其特征在于，所述第一、第二n型轻掺杂区(32、33)中的n型离子浓度为从外侧向内侧呈线性递减分布。
10.如权利要求7所述的TFT基板结构，其特征在于，所述缓冲层(2)、及栅极绝缘层(4)的材料为氧化硅、氮化硅、或二者的组合；所述栅极(5)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
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