CN104768317B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN104768317B
CN104768317B CN201510161834.5A CN201510161834A CN104768317B CN 104768317 B CN104768317 B CN 104768317B CN 201510161834 A CN201510161834 A CN 201510161834A CN 104768317 B CN104768317 B CN 104768317B
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antennas
plasma
process container
coil
high frequency
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Chinese (zh)
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CN104768317A (zh
Inventor
山泽阳平
舆水地盐
齐藤昌司
传宝树
传宝一树
山涌纯
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
CN201510161834.5A 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法 Active CN104768317B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2009-245988 2009-10-27
JP2009245991 2009-10-27
JP2009-245991 2009-10-27
JP2009245988 2009-10-27
JP2010-215113 2010-09-27
JP2010215113A JP5851681B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置
CN201010589485.4A CN102157325B (zh) 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法

Related Parent Applications (1)

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CN201010589485.4A Division CN102157325B (zh) 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法

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CN104768317A CN104768317A (zh) 2015-07-08
CN104768317B true CN104768317B (zh) 2017-12-01

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CN201010589485.4A Active CN102157325B (zh) 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法

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JP (4) JP5851681B2 (ko)
KR (2) KR101758026B1 (ko)
CN (2) CN104768317B (ko)
TW (3) TWI569691B (ko)

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JP2013163841A (ja) * 2012-02-10 2013-08-22 Jtekt Corp 炭素膜成膜装置および炭素膜成膜方法
JP5934030B2 (ja) * 2012-06-13 2016-06-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
JP6084784B2 (ja) * 2012-06-14 2017-02-22 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
KR20140059422A (ko) * 2012-11-08 2014-05-16 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6035606B2 (ja) * 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
CN104602434A (zh) * 2013-10-30 2015-05-06 中微半导体设备(上海)有限公司 电感耦合型等离子体处理装置及其自感应线圈
JP6232953B2 (ja) * 2013-11-11 2017-11-22 富士通セミコンダクター株式会社 半導体装置の製造装置および半導体装置の製造方法
JP6248562B2 (ja) 2013-11-14 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101532376B1 (ko) * 2013-11-22 2015-07-01 피에스케이 주식회사 상호 유도 결합을 이용한 플라즈마 생성 장치 및 그를 포함하는 기판 처리 장치
JP6623511B2 (ja) 2014-11-05 2019-12-25 東京エレクトロン株式会社 プラズマ処理装置
KR101663214B1 (ko) * 2014-12-03 2016-10-06 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
CN105719928A (zh) * 2014-12-03 2016-06-29 中微半导体设备(上海)有限公司 Icp刻蚀中对刻蚀速率非均匀性进行补偿的装置和方法
CN104538341B (zh) * 2014-12-17 2017-06-27 中国地质大学（北京） 一种真空腔室静电卡盘调节装置
JP6603999B2 (ja) * 2015-02-13 2019-11-13 日新電機株式会社 プラズマ処理装置
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JP6703425B2 (ja) * 2016-03-23 2020-06-03 株式会社栗田製作所 プラズマ処理方法及びプラズマ処理装置
CN107333378B (zh) * 2016-04-29 2019-05-03 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置及其控制方法
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US11244808B2 (en) * 2017-05-26 2022-02-08 Applied Materials, Inc. Monopole antenna array source for semiconductor process equipment
CN109036817B (zh) * 2017-06-08 2021-09-17 北京北方华创微电子装备有限公司 电感耦合线圈和工艺腔室
JP7002268B2 (ja) * 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
JP7061264B2 (ja) * 2018-03-20 2022-04-28 日新電機株式会社 プラズマ制御システム及びプラズマ制御システム用プログラム
CN110318028A (zh) * 2018-03-28 2019-10-11 株式会社新柯隆 等离子体源机构及薄膜形成装置
CN112673450A (zh) * 2018-07-30 2021-04-16 诺信公司 用于利用等离子体的工件加工的系统
JP7118864B2 (ja) * 2018-11-07 2022-08-16 キヤノントッキ株式会社 成膜装置、製造システム、有機ｅｌパネルの製造システム
JP7290065B2 (ja) * 2019-05-30 2023-06-13 日新電機株式会社 プラズマ処理装置
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
KR102169658B1 (ko) * 2019-08-26 2020-10-23 주식회사 엘에이티 플라즈마 식각장치
CN112447579B (zh) * 2019-09-04 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理器、晶片顶升装置及其方法
KR102137913B1 (ko) * 2019-10-29 2020-07-24 주식회사 기가레인 플라즈마 안테나 모듈
JP2021103641A (ja) 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷
WO2021154590A1 (en) * 2020-01-31 2021-08-05 Lam Research Corporation Plenum assemblies for cooling transformer coupled plasma windows
TWI778353B (zh) * 2020-04-21 2022-09-21 明志科技大學 手持式大氣電漿裝置
JP6780173B1 (ja) * 2020-05-29 2020-11-04 株式会社三友製作所 マイクロプラズマ処理装置及びマイクロプラズマ加工方法
CN111878338B (zh) * 2020-08-20 2021-08-27 西安交通大学 脉冲等离子体推力器
JP2022039820A (ja) * 2020-08-28 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP2023544772A (ja) * 2020-10-13 2023-10-25 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置｛ｓｕｂｓｔｒａｔｅ ｐｒｏｃｅｓｓｉｎｇ ａｐｐａｒａｔｕｓ｝
JP7288549B2 (ja) * 2021-02-19 2023-06-07 株式会社日立ハイテク プラズマ処理装置
JP2022185603A (ja) * 2021-06-03 2022-12-15 株式会社アルバック プラズマ処理装置
JP7417569B2 (ja) * 2021-10-29 2024-01-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

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KR101838846B1 (ko) 2018-03-14
JP2011119658A (ja) 2011-06-16
JP5911032B2 (ja) 2016-04-27
TW201207883A (en) 2012-02-16
JP5851681B2 (ja) 2016-02-03
TW201143548A (en) 2011-12-01
JP5694721B2 (ja) 2015-04-01
KR20160130728A (ko) 2016-11-14
CN102157325A (zh) 2011-08-17
CN104768317A (zh) 2015-07-08
KR101758026B1 (ko) 2017-07-14
TWI595808B (zh) 2017-08-11
JP2011119659A (ja) 2011-06-16
TWI569691B (zh) 2017-02-01
JP5757710B2 (ja) 2015-07-29
JP2011119657A (ja) 2011-06-16
TWI486994B (zh) 2015-06-01
TW201143546A (en) 2011-12-01
CN102157325B (zh) 2015-05-06
JP2015062181A (ja) 2015-04-02
KR20170038182A (ko) 2017-04-06

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