JP5851681B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5851681B2
JP5851681B2 JP2010215113A JP2010215113A JP5851681B2 JP 5851681 B2 JP5851681 B2 JP 5851681B2 JP 2010215113 A JP2010215113 A JP 2010215113A JP 2010215113 A JP2010215113 A JP 2010215113A JP 5851681 B2 JP5851681 B2 JP 5851681B2
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Japan
Prior art keywords
antenna
processing
plasma
coil
substrate
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JP2010215113A
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English (en)
Japanese (ja)
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JP2011119658A (ja
Inventor
山澤 陽平
陽平 山澤
輿水 地塩
地塩 輿水
昌司 斉藤
昌司 斉藤
一樹 傳寳
一樹 傳寳
山涌 純
山涌  純
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2010215113A priority Critical patent/JP5851681B2/ja
Priority to TW099136521A priority patent/TWI486994B/zh
Priority to US12/913,162 priority patent/US8741097B2/en
Priority to CN201510161834.5A priority patent/CN104768317B/zh
Priority to CN201010589485.4A priority patent/CN102157325B/zh
Priority to KR1020100105166A priority patent/KR101757922B1/ko
Publication of JP2011119658A publication Critical patent/JP2011119658A/ja
Priority to US14/250,783 priority patent/US9899191B2/en
Priority to US14/250,514 priority patent/US9941097B2/en
Application granted granted Critical
Publication of JP5851681B2 publication Critical patent/JP5851681B2/ja
Priority to KR1020160144583A priority patent/KR101758026B1/ko
Priority to KR1020170037590A priority patent/KR101838846B1/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2010215113A 2009-10-27 2010-09-27 プラズマ処理装置 Active JP5851681B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2010215113A JP5851681B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置
TW099136521A TWI486994B (zh) 2009-10-27 2010-10-26 Plasma processing device and plasma processing method
CN201510161834.5A CN104768317B (zh) 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法
CN201010589485.4A CN102157325B (zh) 2009-10-27 2010-10-27 等离子体处理装置和等离子体处理方法
KR1020100105166A KR101757922B1 (ko) 2009-10-27 2010-10-27 플라즈마 처리 장치
US12/913,162 US8741097B2 (en) 2009-10-27 2010-10-27 Plasma processing apparatus and plasma processing method
US14/250,783 US9899191B2 (en) 2009-10-27 2014-04-11 Plasma processing apparatus
US14/250,514 US9941097B2 (en) 2009-10-27 2014-04-11 Plasma processing apparatus
KR1020160144583A KR101758026B1 (ko) 2009-10-27 2016-11-01 플라즈마 처리 장치
KR1020170037590A KR101838846B1 (ko) 2009-10-27 2017-03-24 플라즈마 처리 장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009245991 2009-10-27
JP2009245991 2009-10-27
JP2009245988 2009-10-27
JP2009245988 2009-10-27
JP2010215113A JP5851681B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2011119658A JP2011119658A (ja) 2011-06-16
JP5851681B2 true JP5851681B2 (ja) 2016-02-03

Family

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2010215111A Active JP5694721B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置及びプラズマ処理方法
JP2010215119A Active JP5757710B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置及びプラズマ処理方法
JP2010215113A Active JP5851681B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置
JP2014198534A Active JP5911032B2 (ja) 2009-10-27 2014-09-29 プラズマ処理装置及びプラズマ処理方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2010215111A Active JP5694721B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置及びプラズマ処理方法
JP2010215119A Active JP5757710B2 (ja) 2009-10-27 2010-09-27 プラズマ処理装置及びプラズマ処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014198534A Active JP5911032B2 (ja) 2009-10-27 2014-09-29 プラズマ処理装置及びプラズマ処理方法

Country Status (4)

Country Link
JP (4) JP5694721B2 (ko)
KR (2) KR101758026B1 (ko)
CN (2) CN104768317B (ko)
TW (3) TWI595808B (ko)

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JP2015053108A (ja) * 2011-12-02 2015-03-19 キヤノンアネルバ株式会社 イオンビーム発生装置
JP5894785B2 (ja) * 2011-12-19 2016-03-30 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
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KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6035606B2 (ja) 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
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Also Published As

Publication number Publication date
JP5694721B2 (ja) 2015-04-01
KR20160130728A (ko) 2016-11-14
TWI486994B (zh) 2015-06-01
JP2011119657A (ja) 2011-06-16
CN104768317A (zh) 2015-07-08
TW201207883A (en) 2012-02-16
KR20170038182A (ko) 2017-04-06
CN102157325A (zh) 2011-08-17
TW201143546A (en) 2011-12-01
JP2011119659A (ja) 2011-06-16
JP2015062181A (ja) 2015-04-02
TW201143548A (en) 2011-12-01
CN104768317B (zh) 2017-12-01
JP5757710B2 (ja) 2015-07-29
JP5911032B2 (ja) 2016-04-27
KR101838846B1 (ko) 2018-03-14
JP2011119658A (ja) 2011-06-16
CN102157325B (zh) 2015-05-06
KR101758026B1 (ko) 2017-07-14
TWI595808B (zh) 2017-08-11
TWI569691B (zh) 2017-02-01

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