TW462207B - Method and apparatus for generating high-density uniform plasma by inductively coupling - Google Patents

Abstract

A method and an apparatus of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention comprises a vacuum chamber having a unique coil configuration atop a dielectric ceiling thereof, which is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.

Description

462207 V. Description of the invention (π [Field of the invention] The present invention mainly describes an inductively coupled plasma reactor that can be applied to a large-size semiconducting dual process. The plasma reactor described in the present invention contains a specially designed induction reactor Coils and multifunctional variable dielectric windows are very suitable for semiconductor etching and chemical deposition processes. [Background and past technology] Due to the rapid development of plasma technology, materials that can only be synthesized at high temperatures are gradually becoming available. Replace with low-temperature technology. Plasma technology is widely used in microelectronics, photo-sensing systems or micro-electro-mechanical systems. In the semiconductor processing and manufacturing process, "the chemical touch part is involved" will gradually be fed by the electro-etching institute. Replaced. 'Electro-polymerization technology is roughly divided into two types of traditional plasma and high-density plasma, which have considerable differences in characteristics. The basic structure of the reactor in traditional plasma is rain electrode plate, each connected to high frequency At one end of the power supply, molecules in the field are accelerated by the electric field between the two electrodes to excite the electrons in the gas molecules to generate a plasma. This type of plasma is used for high resolution There is a limit to the degree of etching. The optimal working range is between 1 X 1 0-1 Torr to 4 Torr. Due to the high working pressure, the probability of collision between particles is large, and the plasma generated The density is not enough, so that the vertical etching rate and the depth to lateral ratio should be low. Based on the above-mentioned shortcomings in traditional plasma, there is a need for high-density plasma sources. Inductively coupled plasma (丨cp) is one of the developed forms. The principle is as follows. Current flows through a coil.

narl1046.ptd Page 6 4 6 220 7 V. Description of the Invention (2) The inductance generated by the coil induces a magnetic field. This magnetic field can pass through a medium (such as air, vacuum, or a ferromagnetic core) to generate a secondary induced current, which releases energy in the form of a plasma. As for how to release energy in a low voltage condition to produce high-density, high-uniformity plasma, it is a goal that scientists are pursuing.

Jacob et al. First published a high-density plasma reactor in US Pat. No. 3,705,091, in which the plasma was generated in a spiral coil at a radio frequency (RF) operating frequency of 13 MHz; this electricity Although the slurry reaction device has a high etching rate, the problem of contamination of the cavity wall caused by capacitive coupling between the coil and the reaction cavity wall is very serious. In 1990, Ogle published another plasma reaction device with a different design in U.S. Patent 4, 948, 458; the coil was a flat induction coil and was placed on a dielectric window (Dielec trie wi ndow). There is a matching network between the coil and the RF generator to protect the RF generator. When a frequency of 100MHz (usually 13.56MΗζ) is input, a parallel circle will be generated above the wafer in the reaction chamber. In the plasma-like plasma zone, the applicable pressure range of this plasma reactor is 1 × 1 Torr ~ 5 Torr. According to Fobin in U.S. Patent 5,619,103, the addition of a dielectric window will help reduce the capacitive coupling effect between the coil and the plasma. ICP offers many processing advantages, including: high plasma density, high reaction rate, and controllable sheath voltage. The commercially available I CP machine has induction coils adjacent to the reactor cavity through a layer of dielectric material such as quartz and alumina. At the same time, it is provided by RF

narl1046.ptd Page 7 462207 V. Description of the invention (3) Generate an inductor to engage the plasma. However, regardless of the coil shape and combination, plasma uniformity is an important improvement goal. In u. S. Pat. 1.5,614,055, & 11 ^ & 411 and others designed a dome-shaped reaction chamber top, and a coil was wound around it in a dome shape. This invention uses the arc cavity top to increase the distance between the induction coil and the wafer-to reduce the probability of collision between the ion, electron and other reaction particles in the cavity, and to further improve the plasma uniformity problem. Hanawa in U.S. Pat-No. 5, 6 1 4 and 0 5 5 further coiled the induction coil around the arc roof and the side wall of the reaction chamber ', and used the differences induced by the roof and side wall coils, respectively. Plasma density distribution to adjust the optimized plasma uniformity. Recently, the design of ICP plasma sources has also increased in response to semiconductor processing for large-size wafers, such as: 12-inch wafers, flat-screen display wafers, or substrates (including glass substrates); and how to design large-sized wafers The high-uniformity, high-density plasma reactor is the focus of current design. As the size, diameter, and number of turns of an induction coil increase, the coil impedance increases with it. According to the circuit resonance conditions ω2 = 1 / ί (: (ω: resonance frequency, L: impedance, C: capacitance); a matching capacitor can be obtained regardless of the impedance under the same frequency. However, to avoid frequency The selection of the frequency of mutual interference is mostly based on ISM (Industry, Scientific,

Medical) standard frequency band, such as: 13. 5 6MHz. However, as the impedance of large-size coils increases, the capacitance matching these standard frequency bands becomes relatively small, and it is not even available from the commercial market. In order to solve this disturbing problem, a solution is to use a frequency of a non-standard frequency band, such as: 2MHz; but the impact of it is the interference with other communication frequencies and the degradation of plasma generation efficiency.

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4 6 2 20 T V. Description of the invention (4) Less. Another solution is to replace a single large size, large impedance coil with multiple small size RF induction coils. Based on this concept, Sato proposed a high-density, high-uniformity plasma reactor in US Pat. No. 5,907,221; the RF induction coil of this reactor consists of multiple independent planar spiral coils, and each independent coil can Individually adjusted to produce an optimized plasma distribution. Due to the use of each independent coil, a matching system is required to cooperate. This increases the matching system and program control with the expansion of the reactor, which will cause problems such as increased production costs, complicated program control, and frequency interference. How to produce high-density and high-plasma plasma in low-voltage environment is the current pursuit of goals; and under the trend of increasing semiconductor material size, how to design large-sized and maintain high-density, high-uniformity plasma inductors Coupled plasma reactors are a noteworthy direction. [Objective of the Invention and the Problem to be Solved] The object of the present invention is to design a combined induction coil with a unique structure; use the parallel and series connection of the coils to control the coil impedance, and change the combination and size at will according to the design needs to produce Plasma source of high uniformity and high density plasma. ‘Simultaneously’ the present invention utilizes a modular combination of series and parallel connection between coils to provide the most efficient energy use and the largest area of electricity generation area with the least RF power supply. It also proposes solutions to reduce the capacitive coupling between the induction coil and the plasma, reduce the sheath voltage drop, increase the induced magnetic field, promote the rate of electropolymerization and the uniformity of the plasma.

narl1046.ptd Page 9 462207 5 * Invention description ¢ 5). [Method to solve the problem] The following is a detailed description of the proposed solutions to reduce the capacitive coupling between the induction coil and the electrical destruction, the skin pressure drop, increase the induction magnetic field, and promote the plasma etching reaction rate and ^ uniformity. The scope of application and effects of the present invention are not limited to the following examples. Figure 1A is one of the induction coil configurations described in the present invention: each of the coil configuration 100 is composed of unit coils 106, 108, 11 (), and 112. Each unit coil determines the series mode according to the direction of current flow, so that the induced magnetic field has the same direction. Each coil in Figure 1A is made of a hollow copper tube. It is 3 inches long and has two turns: the cooling water flows inside the hollow steel pipe to control the temperature of two degrees. The design of the diameter and the number of turns of the induction coil can be changed according to the consideration of the following parameters, such as: used frequency, coupling efficiency, magnetic flux, magnetic field uniformity, skin effect, inductance capacitance impedance, oscillation parameters, parasitic capacitance, matching System characteristics, performance index, etc .; 'The most basic consideration is that the total length of the core power flowing through the copper tube of the coil to the ground must be less than one eighth of the wavelength of the RF frequency' in order to achieve the expected induction effect. In the figure, the current provided by the RF power supply Is enters the end of the induction coil 1 2 through a matching circuit 1 1 4 and flows out at the ground terminal 104. The current flows through the unit coils in the same direction and generates induction. A magnetic field; this magnetic field through the ceramic dielectric layer 'generates a secondary induced current in the vacuum cavity of an inductive plasma reactor' to cause gas molecules in the vacuum cavity to be accelerated and collided to excite the electrons in the gas molecules And produce electricity. Positioning between unit coils

narI1046.ptd page 462207 V. Description of the invention (6) The distance should be paid attention to avoid unnecessary dissipation of the RF electromagnetic field induced between the coils. Taking 8-inch wafers as an example, the center distance of each coil Approximately 4 1/2 inches away. In order to respond to the increase in semiconductor size, we can easily use several sets of coil configurations as shown in Figure 1A to combine them into a beam source of the required size to generate a uniform plasma. The configuration of the series coil shown in Figure 1B is similar to Figure 1A, but the winding direction of the copper tubes of adjacent coils will cause the current to flow in the opposite direction. In FIG. 1B, the spiral coil configuration 200 is each composed of unit coils 20 6, 20 08, 210, and 212. Each unit coil determines the series mode according to the direction of current flow, so that the induced magnetic field has the opposite direction. Because adjacent coils have induced magnetic fields of opposite phases, further, the induced electric fields induced under their coils will tend to offset each other, causing a significant reduction in the coupling effect between the induction coil and the plasma, and also reducing the skin of electrical destruction. Pressure drop (sh eat h vo 11 age dr op): As a consequence, this phenomenon will help reduce the unnecessary degree of damage caused by the action of the plasma during the process. Furthermore, RF energy passes through the coil configuration shown in FIG. 1B in sequence. Current passes through the coils with a certain time difference, and a continuous time-induced magnetic field is formed below the line Ϋ. Circle 2 is a schematic diagram of the magnetic field lines 3 0 0 drawn by the adjacent coils 302, 3 04 due to the opposite current winding direction. Similar to continuous, ring-shaped and time-magnet lines, the magnetic field lines will be formed below the coil configuration 200. This magnetic field related to time reference Zhao Shi a '' double will provide a driving effect 'promote the electron release heat & ore 疋 5 turn in the cavity, and then add its residence time in the reaction cavity; electron retention Time and time increase, which reduces the collision loss rate of electrons in the cavity, thereby further reducing the electrical damage rate in the Wugu c + ^ ^ 叩 fork reactor.

narll〇46.ptd Page 11 462207 V. Description of the invention (7) Compared to the series coil configuration of Fig. 1 A and Fig. 1 B 'Another arrangement of n spiral coils arranged in parallel and connected in parallel to a node and sharing one The independent RF power supply will be described as follows; where η is an integer greater than 1, such as 2, 3, 4, 5, and so on. As shown in FIG. 3A, the four spiral coils 408, 410, 411, 414 (n = 4) are connected in parallel and in parallel, and the common node 402 shares an independent RF power supply. Each unit coil is arranged in parallel with each other and arranged in parallel above the dielectric window. 'The current provided by the RF power supply flows through the common terminal 4 0 2' and is divided into two and flows through the other two nodes 4 0 4 and 4 0 6, Make the unit coils induce the same direction of magnetism due to the current flowing in the same direction. These four spiral coils of the same size (the number of turns per field is greater than one, and greater than 2 stupid + γ _, The monument is from the ancient " * 〇 person center inch diameter, in this embodiment, the direct search of the spiral square coil is 3 pairs, moving 9 9 Yin, π Μ π Ni π ^ 2 turns) The output magnetic field has interrelated polarities, and its production + acousto-electricity 1 is extremely dense and uniform when processing 8-inch wafers. For related large -3, ,, ~ r… B ”human size + conductor treatment, such as LCD Cai

If you do n’t use special tools, you can use Gu Yi ’s Jun Ri 3 Pavilion q A,. ^ ^, Β… The coil configuration 400 in Figure 3A is expanded to a plasma source of the required size; „Β a 成 '. And the coil configuration in Fig. 3A, or change the number of unit lines in the% state, take the number or change the coil diameter and number of coils. Not another parallel line 圏 configuration' each adjacent Lines of copper pipes !: Fang ^ will reverse the direction of the current flowing through them. Guanzhong, spiral! Circle group 5 0 0 each by the unit ^ R r, Jiuping Yichen 圏 刈 8,510,512,514 Composition. 4 d 2 f are connected in parallel and 5 in parallel to a common terminal 502 and are shared-independent, H = reactor. Each unit coil is arranged parallel to each other and placed in parallel 1; The current provided by the RF power supply flows through_

462207 V. Description of the invention (8) The same node 5 0 2 is divided into two and flows through the other two nodes 5 04 and 5 06, so that each unit coil induces a magnetic field in the opposite direction due to the current flowing in the opposite direction. . According to the parallel configuration of Figure 3B, the external current is passed through the unit coils. Because the adjacent coils have opposite phase induction magnetic fields, the induced electric fields induced under the coils will cancel each other, compared to the series of β in Figure 1. State, which further reduces the coupling effect between the induction coil and the plasma, and also eliminates the voltage drop across the dielectric window; this phenomenon reduces the sheath voltage of the electrical destruction, and has It helps to reduce the degree of unnecessary component damage caused by the action of plasma during the process, especially the semi-conductor process, which is becoming more and more miniaturized. ~ Figure 3C shows another plasma coil configuration that produces high uniformity and density. Referring to the description of FIG. 3A, the induction coil 600 in FIG. 3C is composed of two pairs of identical coil groups I and 11 staggered above the dielectric window, and the two coil configurations are each formed by a unit coil (η = 2) connected in parallel. , And individual external independent r ρ power supply. The current provided by the RF power supply flows through the unit coils through terminals 602 and 604 of 丨, 丨 丨 and has the same current direction. These two RF power supplies will be precisely controlled and the energy they provide will be 180%. Phase difference 'At this time, the magnetic field induced under the coil will cause the spiral rotation of the electrons in the cavity and increase their residence time in the reaction chamber; at the same time, the collision loss rate of the electrons in the cavity will be relatively reduced', thereby increasing the Plasma density. As described above, the inductive coil configurations 100, 200, 400, and 5000'600 of the present invention can be applied to semiconductor processes', especially semiconductor etching and chemical layering processes. Here's how these unique coil configurations work with the system

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4 6 2 2 0 T V. Description of the invention (9) Process, and a new type of inductively coupled plasma reactor was developed. The vacuum reactor main body 10 in FIG. 4 is composed of a stainless steel bottom plate (botl; 〇n) 12, a cavity wall (sides) 14, a flange 16 and a viewing window 18; A dielectric window (20) is placed across the ib edge of a central hole (56) of one of the flanges (16). The ceramic dielectric window can be made of alumjnuin or quartz material. The reaction gas can enter the reaction chamber uniformly. In particular, the inlet nozzle 2 2 A and the inlet nozzle ring (aring 〇fin 1 ets) 2 2 B are installed in the center of the dielectric window and around the flange, which are different. The nozzle of the inlet can also be used to separate the gases that will react with each other. All the above vacuum components are welded, various gaskets, 0-rings (0-r i n g), and screw fixed joints for connection and combination. The reaction gas provided by the gas storage tank 24 enters the reaction chamber through the intake nozzles 22A and 22B, and is appropriately excited to form a plasma. The vacuum line 26 of the reactor 10 is externally connected to a vacuum pump, and the pressure range can reach 1X1 0_s ~ 4 X1 0-1 Torr. The energy obtained by the plasma in the cavity is provided by an appropriate high-frequency power source, and the magnetic field is induced by the inductance generated by the coil to provide the necessary energy to excite the plasma. The entire plasma generation system includes an RF power supply 28, a matching network 30, and an induction coil 32; the induction coil can be selected as the coil configuration described in Fig. 1 A, Fig. 1 B, Fig. 3A, Fig. 3 B, and Fig. 3C. Each unit coil is fired by a copper tube with a cross section of 3/16 leaves in 2 turns and a diameter of 3 pairs of coaxial helical coils. Taking an 8-inch wafer as an example, the center distance of each unit coil is approximately 41/2 inches . For the coil configuration of the present invention, it is necessary to understand that the number of coil configuration groups can be easily increased for the size of the semiconductor to be processed 'or

narll (M6.ptd Page u 4 6 2 20 7 V. Description of the invention (10) Change the number of coils of each unit in the configuration, or change the shape and number of coils. The coil configuration 32 of the factory is placed in The upper edge of the dielectric window 20 is connected to a matching network 30 by an RF power source 28. The matching network 30 includes a round output terminal 34 * and an output terminal 36 / wheel output terminal 34 to provide the required power via line 38, and the wheel Into the terminal. 3 6 Grounding via pipeline 40a. The frequency of the RF power supply is the ISM standard frequency of 13.56MHz '27. 2MΗζ, or 4068MHz; usually 13 5 with 2. The role of 'will naturally generate considerable High voltage, more than 5,000 volts; and because of the conversion of electromagnetic energy, the high-frequency power supply produces more than amperes. The tolerance level is the ΓΚΓΓϊί system's requirements for high-voltage, high-current loop impedance. Necessary conditions: The present invention overcomes the line power, and has a large 2-inductor magnetic coil with a large sensor library, which provides considerable sound density and uniformity. The effect of the field 'i further improves the internal impedance (I) = resistance of the cavity reaction. (Ω, j stands for imaginary number, sharp, reactance (X), where (Resistance) and X represent impedance (imPedance), R represents the impedance of the resistance coil configuration respectively reactance. Figure 1A and Figure 1B _ United 2. + j 263.8; Figure 3A and old ~ 24.8 + J 252 , 6 and 1 = 26.7 + j 2! The impedances of the parallel coils of 7 and I d B are I = + j 22. Parallel connection with each other without capacitance matching is not required. The size of the chip is required = 2.1 + j 22 · 3. These configurations are determined according to the difficult problem. 1 directly under the electric window 20 is to include a support column in the reaction chamber.

Δ 201 V. The susceptor 44 of the support rod 42 of the invention. The crystal base 44 is connected to the chassis 12 by a support rod 42; a ceramic barrier layer (iso 1 at i 〇n) 46 is provided in the middle of the support rod 42 to avoid the bias voltage (bias) provided to the crystal base being guided to dissipate the crystal. A round RF shield 48 is formed around the base 44. The distance D between the chip 50 and the bottom of the dielectric window will affect the processing performance of the electrical destruction process; it is designed to range from 5 to 10 cm. The power supply for the wafer bias is a still-frequency RF generator 52; like the other RF generator 28, the frequency used is the I SNI standard frequency 13.56 MHz. Other frequencies from kHz to MHz can also be used. A metal frame 54 'is provided on the outer cover of the induction coil 32 to isolate the exposed electromagnetic waves generated by the coil. The metal cover is preferably made of aluminum. In the present invention, for the purpose of obtaining low power and high response engraving rate, an inductively coupled plasma reactor as shown in FIG. 5A is additionally designed; the dielectric window 20 is designed into a unique dish-like structure. “Induction coil in the present invention Placed in a dish and using this dish-like dielectric layer into the reaction chamber to shorten the distance between the induction coil and the wafer 'under extremely low-voltage etching conditions', anisotropy can be achieved at a lower output power (an is 〇 tr op ic) etching and high reactive etching rate. In FIG. 5A, the distance between the dish-shaped dielectric layer and the reaction chamber is χ, and the range of χ is 0 cm to 10 cm; in the embodiment of the present invention, the preferred range is 0 cm to 5 cm. Compared with the plasma device published by the aforementioned JAC, it penetrates into the cavity to isolate the dielectric layer between the inductive coil and the cavity wall, which has the effect of reducing the capacitive coupling between the coil and the electric capacitor. Due to the shortening of the distance between the coil and the wafer, this device is suitable for the etching range of extremely low pressure; the pressure range is between 1 χ 1 0_fi and 1 χ 1 〇-2 Torr, and the preferred operating range is 1 χ 1 5 Torr

narll046tptd page 16 5. Description of the invention (12) To lxl 0-2 Tor. In this pressure range, the device can produce high plasma ion density and excellent anisotropic etching rate. In addition, in order to increase the diffusion distance between low- and medium-pressure reaction particles, the present invention designs an inductively-coupled plasma reactor as shown in FIG. 5β, in which the dielectric window 20 ′ is designed as a unique cap-shaped dielectric layer. As is generally understood, there is a direct relationship between the operating pressure and the mean free path (mean-fi ^ e-path). The mean free path refers to the process of each particle's two consecutive collisions with other particles in the system. The average distance traveled. Because the particle density is directly proportional to the system pressure, and both are inversely proportional to the mean free path. In other words, in a low-pressure system, the average free path of the gas will be larger than in a high-pressure system, and the collision probability of the relative particles is also lower. When an ion accelerates in the direction of a wafer and an excessive order is required to generate a money-carved reaction, the lower the probability of collision encountered, the more the etching direction caused by the particle's response to the wafer will be closer to the vertical; otherwise, the reaction Increasing the working pressure when the device is used in the CVD process increases the probability of collisions between reaction particles: if the reaction particles have recombination due to the same collision with each other, a uniform plasma density will be generated in the cavity. In order to solve this plasma distribution problem, one of the solutions is to increase the distance between the induction coil and the wafer and increase the particle's free path, thereby increasing its diffusion distance to improve the uniformity of the plasma. In Fairbairn & U.S. Patent 5,614,055, a dome-shaped reaction roof is designed to increase the distance between the inductor coil and the wafer. The present invention designs an inductively-coupled plasma reactor containing a unique cap structure and dielectric layers with different heights as shown in FIG. 5B to improve the uniformity of the plasma.

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4 62 20 7

II nil II V. Description of the Invention (13) Fan Yuan Type II, Eight Dielectrics, and Eight Electrical Layers: The best distance from the flange to x 'x. V ^ iin ^ of the present invention published by j ^ Fairbairn The electricity does not work under different conditions. I ’ve used it, and I ’m right! I ::: i large-scale reactors are designed with unique induction coil configurations. ^ The increase in size also brings problems related to volume — such as' reaction gas introduced into the large-size reaction chamber. Problems, too large dielectric chirp volume affects magnetic field penetration efficiency and so on. These invented electric reactors have been solved. Figure 6 is an η consumable plasma reactor for m2 pairs of wafers; the coil configuration is similar to that described in Figure η. Five spiral coils are connected to one end in parallel and in parallel (η = 5), and Qiu uses a source. . Because the single-dielectric window is large and too thick, it will affect the magnetic field penetration efficiency. Therefore, the inductor type electric destruction reactor of FIG. 6 uses a flange 16 as shown in FIG. 7, which cooperates with the unit coil. There are five holes with the same diameter for small dielectric windows. Each dielectric window 20'A''E is designed as a dish-like structure as shown in Fig. 5A, and each unit coil is placed in the dish correspondingly. The distance of each dish-shaped dielectric window into the reaction chamber is X 'X. The perimeter is 0 cm to 10 cm; in the embodiment of the present invention, the preferred range is 0 cm to 5 cm. At the same time, the distribution of the reaction gas introduced into the large-sized reaction chamber is considered; in the present invention, Zhouyuan sets continuous = pout m. And in order to avoid unnecessary induction heat dissipation, this flange is made of non-magnetic metal; such as anodized junction metal. This device is suitable for low-pressure etching range: the pressure range is between ixi〇_s Torr to lxio-2 Torr, and the preferred operating range is from 1xΐ0_5 Torr to nar 11046.ptd page 18 462207

462207 Brief description of the drawing Figure 1 A. A schematic diagram of a series coil configuration of the present invention; wherein the applied current flows through the unit coils of the coil configuration in the same winding direction. Fig. 1B is a schematic diagram of another serial coil configuration of the present invention; wherein an external current flows through two adjacent unit coils of the coil configuration in opposite winding directions. Figure 2 shows the schematic diagram of the induced magnetic field lines generated by two adjacent coils due to the opposite current winding directions. Fig. 3A is a schematic diagram of a parallel coil configuration according to the present invention; wherein an applied current flows through each unit coil configured in the coil in the same winding direction. Fig. 3B is a schematic diagram of another parallel coil configuration of the present invention; wherein an external current flows through two adjacent unit coils of the coil configuration in opposite winding directions. FIG. 3C is a schematic diagram of another parallel coil configuration of the present invention: each of the two parallel coils is a pair, the two pairs of parallel coils are staggered with each other, and each is connected to an independent RF power supply. Fig. 4 is a schematic side sectional view of a plasma reactor of the present invention; in which an induction coil configuration of the present invention is used. FIG. 5A is a partial side cross-sectional view of another plasma reactor according to the present invention; wherein a coil is placed above a dish-shaped dielectric window. FIG. 5B is a partial side cross-sectional view of another plasma reactor according to the present invention; wherein a coil is placed above a hat-shaped dielectric window. Fig. 6 is a side sectional view of another plasma reactor according to the present invention; wherein each unit coil is placed above an independent dish-shaped dielectric window. Fig. 7, a top view of another plasma reactor according to the present invention,

narl1046, ptd page 20 462207 Brief description of the diagram The structure of the flange structure of multiple independent dielectric windows; there is a continuous air inlet nozzle hole between each dielectric window. FIG. 8 is a top view of another plasma reactor according to the present invention, showing a schematic configuration diagram of a flange structure including a plurality of independent dielectric windows; each of the dielectric windows has continuous inlet nozzle holes. .

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Claims (1)

462207 a '_tt Special Equipment ®' 1 · An inductively coupled plasma reactor, comprising:-a reaction, a body comprising a chassis,-an upright and gas-freely bonded method of the free end of the upright side wall surrounding the chassis Blue disk, wherein the flange has a hole;-a dielectric window which air-tightly covers the hole of the flange; and n spaced-apart spiral coils on the dielectric window, where n is greater than 2 Integer, the axes of the n spirals 圏 are upright and parallel to each other, where the n spiral coils are connected in series, the η connected in series, the -end of the spiral coil is grounded, and the other end of the spiral coil is suitable. Connected to the -RF power source; or the n spiral coils are connected in parallel: one end of each spiral coil of the spiral wire is grounded: another one = ^ "In M 'an integer in η' the ^ Each node is suitable to be connected to one or more rF power sources. 2. The reactor according to item 1 of the scope of patent application, wherein the coils are connected in series, and the adjacent two spiral directions are the same. , Such as connected, and adjacent two spiral square To the opposite. 4. For the reactor in the scope of patent application No. 2 or 3, of which ㈣. 5. For the reactor in the scope of patent application No. 1, the coils are connected in parallel, and the two adjacent spirals are The n spirals are the same. 46220 ^ 6. Scope of patent application 6. The reactor according to item 1 of the scope of patent application, wherein the n spiral coils are connected in parallel, and the spiral directions of adjacent two are opposite. 7. For example, the reactor of the scope of patent application, wherein the η spirals include a plurality of pairs of spiral coils, each pair of spiral coils is composed of two spiral coils, wherein one end of the two spiral coils is grounded, and the other One end is commonly connected to one of the m nodes. 8. The reactor according to item 7 of the patent application, wherein the plurality of pairs of spiral coils are connected to a common node (m = 1). 9. The reactor according to item 7 of the patent application, wherein the plurality of pairs of spiral coils are connected to a plurality of different nodes. 10. For a reactor in the scope of claims 8 or 9, where n = 4. 11. As in the scope of patent application item 8, where n = 5, one end of a single spiral coil is grounded and the other end is connected to the common node. 12. The reactor according to item 9 of the patent application, wherein n = 5, wherein one end of a single spiral coil is grounded and the other end is connected to one of the plurality of nodes or to an additional node. \\ Chenlin \ 19991I03 \ PATENT \ narll046.ptd page 23 4G220T t. Patent application scope 13. For example, the reactor of patent application scope item 8 or 9, where n = 16. 14. For example, the reactor of the scope of patent application, wherein the n spiral coils are all substantially the same size, wherein each spiral coil is wound by a hollow copper tube, and each spiral coil has a diameter greater than The number of turns per turn, and a diameter greater than 2 inches. 15. The reactor according to item 1 of the patent application scope, wherein the flange has a plurality of air inlet holes provided on its periphery, and the dielectric window has a central air inlet hole. .1 6. The reactor according to item 1 of the patent application scope, wherein the dielectric window is a flat-type dielectric window. 17. The reactor of claim 1, wherein the dielectric window has a flat substrate and an upright wall integrally formed around the flat substrate, wherein the upright wall of the dielectric window is air-tightly coupled to the flange. And the planar base of the dielectric window protrudes out of the reactor body from the hole of the flange or extends into the reactor body from the hole of the flange, wherein the n spiral coils are placed The dielectric window is on a planar substrate. 18. The reactor of claim 17 in the scope of patent application, the dielectric window is cylindrical narl1046.ptd, page 24, 462207, patent application scope 19. The reactor according to item 7 of the patent application scope, wherein the height of the upright wall of the window from the plane base is less than 10 cm. 20. The reactor according to item 19 of the scope of patent application, wherein the height of the upright wall of the dielectric window from the plane base is less than 5 cm β 21 ′ An inductively coupled plasma reactor includes: The reactor body includes a chassis, an upright side wall ▲ 'surrounding the chassis and a flange airtightly coupled to the free end of the upright side wall, wherein the 忒 flange has η spaced holes, where η is An integer greater than or equal to 2; n dielectric windows cover the 11 holes airtightly; the gate coils are respectively placed on the n dielectric windows, and the n spirals are parallel, where the n Helical coils are externally connected with 0 spiral wires whose sides are connected in series and the other end is suitable for connection to a leaf Φ 十 Λ.Βί,. ^ ,, RF power source; or the n helical coil systems m are eccentrically connected One end of each of the helical coils of η spiral coils is grounded, and the other-π I / Λ ^ is connected to m nodes for force, m is an integer greater than 0 and less than η 'the m nodes & source. 2 Suitable for connection to one or more RF power sources 2 2. For example, the patent application Fan Chongdi 9 1 TS iA r * +, 1 ^ Yuandi reactor of item 21, the n n spiral coils are connected in series , And if% 仏, „τ two adjacent spirals have the same direction. 46220T VI. Patent application scope 23. The reactor according to item 21 of the patent application scope, wherein the n spiral coils are connected in series, and the spiral directions of two adjacent ones are opposite. 2 4. The reactor according to the scope of patent application No. 22 or 23, wherein 25. The reactor according to the scope of patent application No. 21, wherein the n spiral coils are connected in parallel, and two adjacent The spiral direction is the same. 26. The reactor according to item 21 of the patent application, wherein the n spiral coils are connected in series and the spiral directions of two adjacent ones are opposite. 27. For example, the reactor of the scope of application for patent No. 21, wherein the n helical wires include a plurality of pairs of spiral coils, each pair of spiral coils is composed of two spiral coils, wherein one end of the two spiral coils is grounded, and The other end is commonly connected to one of the π nodes. 28. The reactor according to item 27 of the patent application, wherein the plurality of pairs of spiral coils are connected to a common node (m = 1). 29. The reactor of claim 27, wherein the plurality of pairs of spiral coils are connected to a plurality of different nodes. narll046.ptd page 26 6. Scope of patent application 30. If the scope of patent application is 苐 28 or 29, η = 4. 31. The reactor of claim 28, where η = 5, where one end of a single spiral coil is grounded and the other end is connected to the common node. 32. The reactor of claim 29, where η = 5, where one end of a single spiral coil is grounded and the other end is connected to one of the plurality of nodes or to an additional node. 33. A reactor as claimed in item 28 or 29, where η = 1 16. 34. For example, the reactor of the scope of application for patent No. 21, wherein the n spiral coils have substantially the same size, wherein each spiral coil is wound by a hollow copper tube, and each spiral coil has Number of turns greater than one turn, and diameter greater than 2 inches. 35. The reactor according to item 21 of the patent application, wherein the flange has a plurality of air inlet holes provided on its periphery, and a plurality of air inlet holes provided between the n holes. 36. The reactor according to claim 21, wherein the n dielectric windows are flat-type dielectric windows. WChenl in \ 19991103 \ PATENT \ narl 1046.ptd Page 27 462207 VI. Patent application scope '~ 〇Γ7. —Reactor of patent application scope No. 21, where the n dielectrics are: The plane substrate and the upright wall integrally formed around the plane substrate, wherein the upright wall of the dielectric window is air-tightly bonded to the flange, and the plane base of the 5x dielectric window is protruded from the hole of the disc. The body of the reactor or the hole of the flange extends into the body of the reactor, wherein the n spiral coils are respectively placed on the planar base of the n dielectric windows. The fierce τ is called 3 8 4frt. The columnar shape is like the reactor in the scope of patent application No. 37, the dielectric window is round 〇3 9 λ vfa .. The reactor in the scope of patent application No. 37, where the dielectric The height of the & wall of the window from the plane base is less than 10 cm. The reactor of No. 39 of Qilu's patent application scope, wherein the height of the dielectric window t k $ from the base of the plane is less than 5 cm. To οο 〇 i i pairs of inductively coupled electric destruction reactors produced in an inductively coupled plasma reactor and 0 · 001 to install the operating pressure under vacuum pressure sub-flux (flUX) Method, the inductive fuse-type electric window bamboo stalks have a fixed height to the top plate, the method includes using n meat as a part of the top plate, each of the n dielectric windows has a A surface substrate and an upright wall integrally formed around the planar substrate, and narl1046 * ptd Page 28 4B2207 Sixth, the scope of patent application f The electric window is air-tightly combined with the top plate, and the combined manner makes the dielectric window flat and its I * · U human Thai bottom extends into the reaction The main body of the device; and using the n coils placed on the plane substrate of the n, dielectric windows to generate the inductive coupling type ^: wherein the axes of the n spiral coils are upright and parallel to each other, where Far n spiral coils are connected in series 'the n spirals connected in series, one end of the loop is grounded' and the other end is connected to an RF power source; or n spiral coils are connected in parallel and should be connected in parallel One end of each of the helical coils of the connected ^ spiral coils is grounded, and the other end is connected to m, which is an integer greater than 0 and less than n. The "nodes" are connected to one or more RF power sources. People are inductive. In this student's middle class, the method of emptying is really entrusted. IX 4 * Section ο 11 Wai to Fan 1 ίο Lee ο Specialize in introducing Shen Yiru as in * Department 42 pulp 1ρ · ί ^ will include and include As soon as Kong Buqi stepped in, the members of Falun Fang Zhou's entry board ^ the first and second window TpBT. -4 Solid 43 operation with the device in accordance with the application should be with the special body, please apply with the body, such as gas, gas, electric induction, and the induction, the hole gas inlet, the edge method arvl side of the disk "item top U 1 Xuan Qi 41 is worse than Yu Qi, and there is a multi-windowed J's # '别 间 ί knife window, please apply for Qi, such as M. The device that operates in 44 is the same as the slurry type coupling that should step through one and more with a hole and aeration. narll046, ptd page 29 4 62207 VI. Application for patent scope 45. The method of applying for patent to enclose item 41, wherein the Γ1 spiral coils are connected in series and the adjacent two spiral directions are the same 0 46. As in The method according to item 41 of the patent, wherein the n helical coils are connected in series and the spiral directions of adjacent two are opposite. 47. The method according to item 45 or 46 of the patent, where n = 4. 48. The method of item 41 in the patent application, where the n spiral coils are connected in parallel y, and the adjacent two have the same spiral direction. 49. The method of item 41 in the patent application, wherein the n spirals Lines are connected in series and the spiral directions of two adjacent ones are opposite. 50. The method of item 41 in the patent application, wherein the n spiral lines include multiple pairs of spiral coils, and each pair of spiral coils consists of two spiral coils. The j _ ends of the two spiral coils are both grounded 1 and the other —— ends are connected to the -m of the m nodes in common.-The method of item 50 in the patent application, wherein the pair of spirals The coil system is connected to a common fzft point (m = 1). 0 52. The method of item 50 of the patent scope J is applied as above, wherein the multiple pairs of spiral coil systems are connected to a plurality of different points: A: point. aarl1046.ptd Page 30 4 6 2 20 7 6. Scope of Patent Application 53. For the method of applying for the 51 or 52 item of patent scope, where n = 4. 54. The method of claim 51, where n = 5, where one end of a single spiral coil is grounded and the other end is connected to the common node. 55. The method of claim 52, where n = 5, where one end of a single spiral coil is grounded and the other end is connected to one of the nodes or to an additional node. 56 6. The method as claimed in item 51 or 52 of the patent application range, wherein n = 1 16. 57. For example, the method of claim 41, wherein the n spiral coils are all substantially the same size, wherein each spiral coil is wound by a hollow copper tube, and each spiral coil has a diameter greater than one.圏 number of turns, and diameter greater than 2 inches. 58. In the method of applying for item 41 of the patent scope, the dielectric window is cylindrical. 59. The method of claim 41, wherein the height of the vertical wall of the dielectric window from the plane base is less than 10 cm. \\ ChenSin \ 19991103 \ PAT & VT \ narl1046.ptd Page 31 A6220T Scope of patent application If you apply for the method of upright wall from item 59 of the patent application, where the height of the dielectric substrate's surface base is less than 5 cm. 1〇_ 0 ^ ~ A method of 'chassis Ϊ = sentence-based method for the inductively coupled plasma generated in an inductive consumable electric equipment reactor and an operating gas that is higher than the continuous gas pressure. Gastric inductor-coupled electric mass reactor windows are used as a micro-panel at a fixed height. The method includes using a portion of the n-dielectric surface substrate f-top plate. Each of the n-dielectric windows has a flat window. Six upright walls integrally formed around the plane substrate, and the dielectric surface base ^ ^ ^ is combined with the top plate ′ in a combined manner so that the flat electrical window of the dielectric window is outside the reactor body; and uses Η coils placed on the tangent substrate of the η medium beans to generate the inductively coupled plasma, the lines: the axis of the helical coil is upright, and the -ends of each other are passed: ΓΠ 连 • , The helical coils of the n connected in series: one end is connected to an RF power source; or each-connection of the η '[the helical coil sections of the η connected in parallel :, ground' and another -The end of the flail is smaller by an integer 'the m nodes are relayed. narU046.ptd Page 32 4 6220 T VII. Patent application scope Same operating gas is introduced into the top plate at the same time by a plurality of air inlet holes provided on the periphery of the top plate and a plurality of air inlet holes between the n dielectric windows Inside an inductively coupled plasma reactor. 64. The method according to item 61 of the patent application scope, further comprising separately passing different operating gases through a plurality of air inlet holes provided on the periphery of the top plate and a plurality of inlet holes interposed between the n dielectric windows. Air holes are introduced into the inductively coupled plasma reactor. 65. The method according to item 61 of the patent application, wherein the n spiral coils are connected in series, and the spiral directions of two adjacent spiral coils are the same. 6 6. The method of claim 61 in the scope of patent application, wherein the n spiral coils are connected in series, and the spiral directions of two adjacent coils are opposite. 67. A method as claimed in item 65 or 66, where n = 4. 68. The method of claim 61 in the scope of patent application, wherein the n spiral coils are connected in parallel and the spiral directions of two adjacent spiral coils are the same. 69. The method of claim 61 in the scope of patent application, wherein the n spiral coils are connected in series, and the spiral directions of two adjacent coils are opposite. 7 0. The method according to item 61 of the patent application scope, wherein the n spirals narl1046-ptd Page 33 462207 VI. Patent application scope, the wire contains multiple spiral coils, each pair of spiral coils consists of two spiral coils, where one end of the two spiral coils is grounded and the other end is connected to One of the m nodes. 71. The method according to item 70 of the scope of the patent application, wherein the plurality of pairs of spiral coils are connected to $ U r = i / λ \ a main node (m = 1). 72. The method of claim 70, wherein the plurality of pairs of spiral π coils are connected to a plurality of different nodes.疋 73 · If the method of patent application No. 71 or 72, where η = 4 method, where n = 5, where the other end is connected to 嗲 7 j, such as a separate spiral of patent application No. 71 One end of the coil is grounded to a common node. 75. The end of a separate spiral coil as claimed in item 72 of the patent application is grounded to one or more of the multiple nodes, where n = 5, where ′ and the other node. One end is connected to a method that reads 76 > such as the scope of patent application 71 or 7? 2 where n = u 77. If the coils of scope 61 of the patent application have substantially the same size, where: n of them Spiral, each spiral coil is made of narl1046.ptd Page 34 4 6 2 2 0 7 6. Scope of patent application A hollow copper tube is wound, and each spiral coil has a number of turns greater than one turn and a diameter greater than 2 inches. 78. The method of claim 61 in the scope of patent application, wherein the dielectric window is cylindrical. The window should be divided into 0, the public law 10, the low term, 61, the high degree of the range, the bottom of the foundation, please ask Shen Ping, as you should. From 9 to 7, the window dielectric should be straight. 'J 分 去 公】 5 square Yu's low degree 79 high first round of the range of the number of bases, please contact Shen Ping like this. Standing straight from the 80 wall, the line is like a spiral screw, each of the production devices In response to this, Xiang Xiao's 14th-ranked leader is the same as Fan Xiangli. Please apply for a special 816 11/3 of 81 copper wire in the copper air for the diameter of the pipe. Circles 3 to 2 and a threaded screw 1 each with a straight diameter of 0 '. The winding tube is a circle. The thread% of the threaded screw is' 1', and each of them should be reversed. The first round of Tong Co Co is deaf and talented, so please apply for it. If you have 52 turns, 8 thread spirals-each thread spiral. 'The diameter is straight and the diameter of the copper tube ffvoid and i ^ i is 3 / circle of the diameter of the circle 16. The diameter of the tube is: from the circle to the distance from $ to the screw h. Rotate the snails in one way, one way in each way, 7 5 / Fan Tongli, Tai Wai, post-secondary, please confirm that there is a 83-circle white line narl1046, ptd page 35 462207 VI. Application for patent scope A hollow copper tube with a diameter of 3/16 inches is wound, and each spiral coil has 2 to 3 turns and 2 to 4 inches diameter of. 84. The method of claim 7 in the scope of patent application, wherein the n spiral coils have substantially the same size, and each spiral coil is wound by a hollow copper tube with a diameter of 3/16 inches And each spiral coil has 2 to 3 turns and a diameter of 2 to 4 inches. narl1046.ptd Page 36