CN104754254B - 成像设备和成像系统 - Google Patents

成像设备和成像系统 Download PDF

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Publication number
CN104754254B
CN104754254B CN201410808890.9A CN201410808890A CN104754254B CN 104754254 B CN104754254 B CN 104754254B CN 201410808890 A CN201410808890 A CN 201410808890A CN 104754254 B CN104754254 B CN 104754254B
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China
Prior art keywords
transistor
gate
type
potential
imaging device
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Chinese (zh)
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CN104754254A (zh
Inventor
国米和夫
大贯裕介
成濑裕章
楠川将司
广田克范
远藤信之
山崎和男
小林広明
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201410808890.9A 2013-12-26 2014-12-23 成像设备和成像系统 Active CN104754254B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-269673 2013-12-26
JP2013269673A JP6242211B2 (ja) 2013-12-26 2013-12-26 撮像装置および撮像システム

Publications (2)

Publication Number Publication Date
CN104754254A CN104754254A (zh) 2015-07-01
CN104754254B true CN104754254B (zh) 2018-07-31

Family

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Family Applications (1)

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CN201410808890.9A Active CN104754254B (zh) 2013-12-26 2014-12-23 成像设备和成像系统

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Country Link
US (1) US9247173B2 (https=)
JP (1) JP6242211B2 (https=)
CN (1) CN104754254B (https=)

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US20230299109A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensors and methods of manufacturing thereof
DE102022124675A1 (de) 2022-09-26 2024-03-28 Ifm Electronic Gmbh PMD-Sensor mit mehreren Halbleiterebenen

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CN101118915B (zh) * 2007-08-08 2011-08-10 友达光电股份有限公司 光感测元件及其制作方法
CN102376725A (zh) * 2010-08-05 2012-03-14 佳能株式会社 检测装置和放射线检测系统

Also Published As

Publication number Publication date
JP6242211B2 (ja) 2017-12-06
US9247173B2 (en) 2016-01-26
US20150189211A1 (en) 2015-07-02
CN104754254A (zh) 2015-07-01
JP2015126385A (ja) 2015-07-06

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