CN104733421A - 激光焊接方法、激光焊接夹具、半导体装置 - Google Patents

激光焊接方法、激光焊接夹具、半导体装置 Download PDF

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Publication number
CN104733421A
CN104733421A CN201410606915.7A CN201410606915A CN104733421A CN 104733421 A CN104733421 A CN 104733421A CN 201410606915 A CN201410606915 A CN 201410606915A CN 104733421 A CN104733421 A CN 104733421A
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component
laser welding
laser
terminal
semiconductor device
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CN201410606915.7A
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CN104733421B (zh
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玉井雄大
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/206—Laser sealing
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/035—Aligning the laser beam
    • B23K26/037—Aligning the laser beam by pressing on the workpiece, e.g. pressing roller foot
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
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    • B23K2103/00—Materials to be soldered, welded or cut
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Abstract

本发明提供一种能够提高焊接部的接合强度的激光焊接方法、激光焊接夹具、以及使用该方法进行制造的半导体装置。通过利用激光焊接夹具(100)的按压部即多个爪部(39)进行按压，使第一构件即第一被焊接构件(1)与第二构件即第二被焊接构件(2)之间的间隙(10)为300μm以下，并向被爪部(39)夹持的部位的第二被焊接构件(2)照射激光(35)来对2个构件(1、2)进行激光焊接。

Description

激光焊接方法、激光焊接夹具、半导体装置
技术领域
本发明涉及激光焊接方法、激光焊接夹具、以及使用该激光焊接方法制成的半导体装置。
背景技术
图15是通常的功率半导体模块500的结构图。该功率半导体模块500包括：散热底座51、经由焊料等接合材料52将背面导体图案53固定在该散热底座51上的DCB(direct copper bonding：直接覆铜)基板54、经由焊料等接合材料56而固定在DCB基板54的表面侧导体图案55上的半导体芯片57、固定在散热底座51上的端子嵌入型树脂壳体58、以及固定在该端子嵌入型树脂壳体58上的端子59、60、61。
功率半导体模块500还具备：半导体芯片57所未图示的表面电极、栅极垫；将表面电极、栅极垫、表面侧导体图案55与端子59、60、61分别连接的接合线62、以及填充在端子嵌入型树脂壳体58内的封胶材料63。
DCB基板54由陶瓷绝缘基板54a、背面导体图案53及表面侧导体图案55构成。
近年来，功率半导体模块500要求增大其电流容量及实现小型化，随之带来的是半导体芯片57要能够通过大电流并具有比以往要小的形状，因此是在高电流密度下使用。由此可知，近年来功率半导体模块500的重要技术问题在于使半导体芯片57所产生的热量高效地散热，以确保在高功率动作下的可靠性。
为了解决这一问题，使用通电路径的截面积比现有的接合线62要大、从而热容更大的引线框来代替接合线62，还将其用作为布线用端子或外部导出端子。存在以下布线结构：将该布线用端子与半导体芯片57的上表面侧的主电极面接合，将布线用端子有效地用于传热路径，从而使半导体芯片57所产生的热量也能从上表面侧进行散热。
此外，作为提高所述散热性和使芯片温度分布平均化的技术手段，专利文献1中记载了将高传热性的散热器与半导体芯片的上表面接合，从而使半导体芯片中央部的热量向周围散发的结构。
在上述布线结构中，使用引线框来将外部导出端子与所述布线用端子之间相接合除了使用电阻焊接、超声波接合之外，还可以使用专利文献2所记载的激光焊接。激光焊接是用激光的能量将被焊接材料熔融之后，使其冷却并凝固从而将被焊接材料彼此接合的方法。激光焊接不同于电阻焊接或超声波接合等接合方法，其具有接合设备无需与构件进行接触就能进行接合的特征。激光焊接已知有连续地照射激光来使被焊接材料熔融的缝焊、和用高输出的脉冲波来照射激光从而使被焊接材料局部熔融的点焊。该点焊的激光能量密度较高，因此与缝焊相比能够实现深熔，从而即使是在被焊接材料使用具有一定厚度的金属板材且金属板材相互重叠的状态下也能够进行接合。
另外，专利文献3中公开了在多个部位对引线框端子进行激光焊接、以及在重叠的被焊接材料的要进行激光焊接的部分预先形成凹凸部来对被焊接材料进行定位。
另外，专利文献4中公开了使引线框端子的激光焊接部位露出到树脂外。
另外，专利文献5中公开了通过按压引线框来进行激光焊接、以及用圆柱状或棱柱状的用于散热的导热探针按压激光焊接部位来进行激光焊接。
另外，专利文献6中公开了对激光焊接部位进行镀敷处理、以及用树脂覆盖在半导体芯片上以使飞溅物不会飞散到半导体芯片等上。
另外，专利文献7中公开了镀敷材料为镍、钯、金等。
另外，专利文献8中公开了通过使引线框局部变薄来降低刚性。
另外，专利文献9中公开了通过切口来进行激光焊接。
现有技术文献
专利文献
专利文献1：日本专利特开2000－307058号公报
专利文献2：日本专利特开2004－96135号公报
专利文献3：日本专利特开2001-45634号公报(图1～图7)
专利文献4：日本专利特开2007-265962号公报(图2、图8)
专利文献5：日本专利特开2009-190067号公报(第0007、0008、0017段)
专利文献6：WO2009-81723说明书(图1、图8、第0024段)
专利文献7：日本专利特开2011-77278号公报(第0026段)
专利文献8：日本专利特开2008-98585号公报(第0043段)
专利文献9：日本专利特开平7－14969号公报
发明内容
发明所要解决的技术问题
由于功率半导体模块500能够进行大电流的控制，因此能够用于电动汽车的发动机控制、发动机驱动用控制装置等所有领域，在应用到这些领域时，功率半导体模块500要求具有更小的尺寸和更高的可靠性。模块小型化的对策之一是半导体芯片57的小型化，而随着半导体芯片57的小型化，半导体芯片57的电流密度会变高，而为了确保高功率动作下的高可靠性，使半导体芯片57所产生的热量高效地散热就成为了技术问题。
为了提高散热性，将布线用端子与半导体芯片57的主电极面接合，并将所述外部导出端子与所述布线用端子激光焊接时，激光焊接部的结合状态会影响到散热性及通电性等接合部的长期可靠性。
若激光焊接部的接合面积变小，则不仅散热路径会变窄，而且在通过大电流时有可能会变成异常的发热部位。
另外，若功率半导体模块500等半导体装置在温度变化剧烈的环境下使用，则随着大电流的通过，模块发热会导致模块整体和局部产生热变形，从而会在激光焊接部发生应力集中。
导致激光焊接部的结合状态不稳定的主要因素有外部导出端子与布线用端子的错位、及端子之间的间隙。这些错位、间隙是由于构件(外部导出端子与布线用端子)的尺寸公差、组装公差、组装操作性、模块热变形等各种因素引起的。另外，重合端子的错位有可能会导致激光穿透端子或模块损伤。此外，在端子之间的间隙较大的情况下，热能有可能无法传递到下侧的端子，从而引起无法接合的状态。
即，在将外部导出端子与布线用端子激光焊接的结构中，重要的是将端子的错位和端子之间的间隙控制在最低限度，从而形成稳定的激光焊接部。
而上述专利文献1～9中并没有记载使用具有多个按压部的激光焊接夹具来从一侧按压重叠的被焊接构件并进行激光焊接。
本发明的目的在于解决上述问题，提供一种提高了焊接部的接合强度的半导体装置、激光焊接方法及激光焊接夹具。
解决技术问题所采用的技术方案
为了达到上述目的，本发明的半导体装置的特征在于，包括：陶瓷绝缘基板；固定于所述陶瓷绝缘基板的表面的表面导体图案；与所述表面导体图案电连接的半导体芯片；与所述半导体芯片电连接的第一构件；以及在一个以上的部位与所述第一构件激光焊接在一起并电连接的第二构件，在所述激光焊接部位的所述第一构件与所述第二构件之间的间隙在300μm以下。
上述结构能够提高第一构件与第二构件的接合强度。
另外，上述半导体装置中，所述激光焊接部位的外部边缘之间的距离优选在2mm以下。
根据上述结构，由于焊接部之间的距离较短，因此能够提高第一构件与第二构件的接合强度。
另外，上述半导体装置中，所述第一构件的厚度优选在0.5mm以上，所述第二构件的厚度优选在1mm以下。
根据上述结构，激光的能量能够充分地热传导至第一构件，能够提高第一构件与第二构件的接合强度。
另外，上述半导体装置中，优选至少在所述激光焊接部位的所述第一构件及所述第二构件为平面。
根据上述结构，第一构件与第二构件的间隙很容易达到300μm以下。
另外，上述半导体装置中，优选在所述第一构件和所述第二构件设置用于对所述第一构件与所述第二构件进行定位的嵌合部，所述激光焊接部位在所述嵌合部以外的部位。
根据上述结构，由于用嵌合部来对第一构件与第二构件进行定位，因此在焊接时不易发生错位。
另外，上述半导体装置中，优选具备对所述陶瓷绝缘基板、所述表面导体图案、所述半导体芯片和所述第一构件的一部分进行密封的密封材料，一个以上的所述激光焊接部位未被所述密封材料密封。
根据上述结构，由于陶瓷绝缘基板与所述表面导体图案及所述半导体芯片被密封材料所密封，因此即使激光焊接时有飞溅物飞散，也不会附着在周围而造成短路等。
本发明的激光焊接方法使用具备多个按压部的激光焊接夹具，其特征在于，包括：将第二构件载放到第一构件上的设置工序；利用多个所述按压部，朝着将所述第二构件向所述第一构件按压的方向对所述第二构件进行加压，以使所述第一构件与所述第二构件之间的间隙达到300μm以下的加压工序；以及在进行所述加压工序的同时，向所述按压部之间的所述第二构件的表面照射激光，从而对所述第一构件与所述第二构件进行激光焊接的第一焊接工序。
上述结构能够提高第一构件与第二构件的接合强度。
另外，上述激光焊接方法优选在所述第一焊接工序之后，具备在所述第一构件与所述第二构件的间隙为300μm以下的区域中对所述第一构件与所述第二构件进行激光焊接的第二焊接工序。
上述结构能够提高第二焊接工序中焊接的接合强度。在进行第二焊接工序时，可以省略加压工序。
另外，上述激光焊接方法中所述激光焊接部位的中心点之间的距离优选在4mm以下。
根据上述结构，由于焊接部之间的距离较短，因此能够提高第一构件与第二构件的接合强度。
另外，上述激光焊接方法优选在所述第一构件和所述第二构件设置用于对所述第一构件与所述第二构件进行定位的嵌合部，所述激光焊接部位在所述嵌合部以外的部位。
根据上述结构，由于嵌合部不会在激光焊接时直接变形，因此，第一构件与第二构件不易发生错位。
另外，上述激光焊接方法是具备如下构件的半导体装置的激光焊接方法：陶瓷绝缘基板；固定于所述陶瓷绝缘基板的表面的表面导体图案；与所述表面导体图案电连接的半导体芯片；与所述半导体芯片电连接的第一构件；以及在一个以上部位与所述第一构件激光焊接在一起并电连接的第二构件，所述激光焊接方法在所述设置工序之前，优选具备用密封材料将所述陶瓷绝缘基板、所述表面导体图案、所述半导体芯片和所述第一构件的一部分密封的密封工序。
根据上述结构，由于陶瓷绝缘基板与所述表面导体图案及所述半导体芯片被密封材料所密封，因此即使激光焊接时有飞溅物飞散，也不会附着在周围而造成短路等。
本发明的激光焊接夹具的特征在于，具备多个按压部，所述按压部之间的距离是在用激光进行焊接的宽度两侧分别加上0.5mm以上且3mm以下的距离后得到的距离。
根据上述结构，由于按压部无需与用激光进行焊接的熔融部分接触就能够按压焊接部的附近，因此，第一构件与第二构件不易发生错位。
发明效果
根据本发明，能够提供一种提高了焊接部的接合强度的激光焊接方法、激光焊接夹具、以及使用该激光焊接方法进行制造的半导体装置的制造方法和半导体装置。
附图说明
图1是本发明的实施例1的激光焊接方法的工序图。
图2是图1之后的激光焊接方法的工序图。
图3是图2之后的激光焊接方法的工序图。
图4是图3之后的激光焊接方法的工序图。
图5是本发明的实施例2的激光焊接夹具的主要部分结构图。
图6是本发明的实施例3的半导体装置的组装工序的剖视图。
图7是图6之后的半导体装置组装工序的剖视图。
图8是图7之后的半导体装置组装工序的剖视图。
图9是图8之后的半导体装置组装工序的剖视图。
图10是在各端子分别形成了嵌合部并将发射极上侧端子重叠地放置在发射极下侧端子上的部位的放大图。
图11是表示端子之间的间隙与接合部的剪切强度的关系的图。
图12是表示端子之间的间隙与焊接部的关系的图。
图13是表示没有树脂密封的情况下在激光焊接时产生的飞溅物的图。
图14是本发明的实施例4的半导体装置的主要部分剖视图。
图15是通常的功率半导体模块的结构图。
具体实施方式
用以下的实施例来说明实施方式。
[实施例1]
图1～图4示出本发明的实施例1的激光焊接方法，是按照工序的顺序表示的工序图。图1～图4中的(a)是俯视图，(b)是沿(a)的Y-Y线切断后的剖视图。
图1中，将上侧的第二构件即第二被焊接构件2重叠地载放到下侧的第一构件即第一被焊接构件1上。此时，要焊接的部位在两个被焊接构件1、2之间的间隙10有可能大于300μm。第一、第二被焊接构件1、2是热传导率在100W/(m·K)以上的高热传导体，例如是Cu(铜)、Cu-Mo(铜·钼)、Cu-W(铜·钨)、Mo(钼)、W(钨)、Al-SiC(铝·碳化硅)、Si-SiC(硅·碳化硅)等。另外，若在激光要照射的第二被焊接构件2的表面实施例如无电镀Ni-P(镍·磷)、无电镀Ni-B(镍·硼)、电镀Ni(镍)，则能提高激光的吸收率，因此是优选的。
接下来，在图2中，例如通过未图示的空气压驱动的气缸等加压装置对激光焊接夹具100的支柱40进行加压。移动激光焊接夹具100，以使将成为焊接部5(参照图3)的部位位于设置在支柱40前端的按压部即2个爪部39之间，并以3×9.8N左右的力在第二被焊接构件2上加压，从而使两个被焊接构件1、2之间的间隙10达到300μm以下。如前文所述，为了使第一、第二被焊接构件1、2重叠而减小两者的间隙10，这2个爪部39是必需的。另外，2个爪部与第二被焊接构件2接触的部位是长度L为例如1mm左右的直线状。图中示出了相接触的2个部位排列在一条直线上的情况，但也可以是彼此相对而平行的情况。
接着，在图3中，向成为焊接部位的照射面6照射激光35进行焊接。激光35是脉冲波激光。爪部39保持状态不变直到焊接部位凝固为止。焊接部位会因热量向周围的被焊接构件1、2扩散而迅速冷却并凝固。
当焊接部位存在多个时，进一步在图4中，在第一次激光焊接结束之后，将2个爪部39移动到与第一次激光焊接的部位(焊接部5)不同的部位，在2个爪部39不对第二被焊接构件2进行压接的状态下与熔融部5相邻地进行第二次及之后的激光焊接。第二次及之后的激光焊接不再需要进行第一次激光焊接中为了确保2个被焊接构件1、2之间的间隙在300μm以下而用爪部39来对第二被焊接构件2进行压接的工序。第二次及之后的激光焊接的部位只要在2个被焊接构件1、2之间的间隙确保在300μm以下的区域内即可，并无特别限定。
根据上述焊接方法，由于第二次及之后的激光焊接中省略了用2个爪部39进行按压的工序，因此能够缩短死区时间。另外，通过将第二次及之后的激光焊接的部位设置在第一次激光焊接部位附近(2mm以内)，能够减小激光焊接的焊接部5之间的间隔，能够提高接合强度。
当然，也可以是2个爪部39与激光35一体地移动，并在移动过程中用2个爪部39进行按压来进行激光焊接。
另外，若将第一被焊接构件1(相当于图7中的发射极下侧端子30的构件)的厚度设为0.5mm以上，将第二被焊接构件2(相当于图8中的发射极上侧端子33的构件)的厚度设为1mm以下，则能够实现良好的激光焊接。若第一被焊接构件1的厚度小于0.5mm，则要焊接的部位有可能穿透到第一被焊接构件1的背面侧。若第二被焊接构件2的厚度大于1mm，则要焊接的部位无法充分地扩大至第一被焊接构件1的内部，有可能导致焊接强度下降。若为了增加该焊接强度而过度地增大激光输出，则有可能导致热量传导至爪部39，从而爪部39发生变形。
另外，激光焊接部位的中心点之间的距离优选在4mm以下。若中心点之间的距离大于4mm，则与4mm以下的情况相比，第一构件与第二构件的接合强度容易变弱。
[实施例2]
图5是本发明实施例2的激光焊接夹具100的主要部分结构图，图5(a)是整体的立体图，图5(b)是2个爪部39的侧视图，图5(c)是2个爪部39的主视图。
该激光焊接夹具100包括支柱40、以及与该支柱40连接并对焊接位置附近的两端进行按压的2个相对的爪部39。2个爪部39的前端是如刀刃那样的直线状，但是钝的。2个爪部39的直线状前端部分也可以设置为从图5记载的方向旋转90度后的角度。
如上述图3(a)所示，该2个爪部39之间的间隙T扩大至不会干扰激光35的程度，比因激光35而熔融并固化后的焊接部5(熔融痕迹)的尺寸要大。具体而言，例如，当激光35的照射面6的直径D1为0.4mm左右时，焊接部5的直径D2为1.5mm左右。若使2个爪部39分别离开焊接部50.5mm～3mm左右，2个爪部39的间隔T为2.5～7.5mm左右，则2个爪部39不会干扰激光35(激光35不会照射到2个爪部39)，而且焊接部5也不会与2个爪部39相接，因此是优选的。激光35照射到2个爪部39之间的部位。被爪部39按压的部位位于激光35的照射面6的附近，用2个爪部39对第二被焊接构件2的成为焊接部5的部位附近进行加压，使2个被焊接构件1、2之间的间隙在300μm以下。在此状态下，将激光35照射到2个爪部39之间，对被焊接构件1、2进行激光焊接。
若2个所述爪部39的间隙T过大，则第一被焊接构件1与第二被焊接构件2的密接性会变差，彼此之间的间隙10会大于300μm，将导致焊接部5的接合强度下降。通过使用这种激光焊接夹具100，能够对将成为焊接部5的部位附近进行按压，使被激光35照射的正下方的被焊接构件1、2之间的间隙10减小至300μm以下，从而能够使接合状态稳定。
[实施例3]
图6～图9是按照工序的顺序示出本发明的实施例3的半导体装置200的组装过程的剖视图。这些图中示出通过激光焊接将半导体芯片上的布线用端子与外部导出端子接合的半导体装置的组装工序。该组装工序中采用上述激光焊接方法。
图6中，经由焊料等接合材料22，在由d导热性较优的材料(例如Cu、Al)构成的散热底座21上配置DCB基板24的背面导体图案23。然后，经由焊料等接合材料26、29，在形成于所述DCB基板24表面的表面侧导体图案25上配置半导体芯片27和集电极端子31。接着，经由接合材料28在所述半导体芯片27的未图示的主电极面上配置发射极下侧端子30。该发射极下侧端子30例如是厚度为1.5mm左右的布线用端子。利用加热工序使各接合材料22、26、28、29熔融后，通过冷却和再凝固使各个构件形成为一体，半导体芯片27(例如IGBT(绝缘栅双极晶体管)芯片和FWD(续流二极管)芯片)经由接合材料28与发射极下侧端子30电连接。发射极下侧端子30是布线用端子(第一构件、第一被焊接构件)，由导电性和导热性较优的材料形成，例如使用铜构件。另外，DCB基板24由陶瓷绝缘基板24a、背面导体图案23及表面侧导体图案25构成。
接着，图7中，用树脂密封材料32对图6的各个构件进行密封。树脂密封材料32使用例如环氧类树脂。用壁部将散热底座21的四周包围，在其中填充液态的环氧树脂，使之固化来进行密封。此时，对半导体芯片27上与接合材料28进行树脂密封，而发射极下侧端子30的上表面及集电极端子31的上表面没有被密封而是露出的。
另外，进行树脂密封的区域是散热底座21的上部、DCB基板、半导体芯片27及表面侧导体图案25上。该树脂密封材料32的表面32a不与发射极下侧端子30的背面30a接触。在树脂密封材料32的表面32a与发射极下侧端子30的背面30a接触的情况下，激光焊接时从发射极下侧端子30的背面30a进行的散热会受到抑制，熔融部容易扩大，从而导致焊接部容易贯穿发射极下侧端子30，因此不是优选的。
另外，在激光焊接时飞溅物较少的情况下，也可以省略树脂密封的工序。
接着，图8中，将外部导出端子(第二构件、第二被焊接构件)即发射极上侧端子33重叠到图7所示的发射极下侧端子30上。发射极上侧端子33的厚度例如为1.0mm。此时，端子30、33之间的间隙10有可能超过300μm。发射极上侧端子33由导电性和导热性较优的材料形成，例如使用铜构件。发射极上侧端子33的表面例如实施了电镀镍。
然后，在图9中，用激光焊接夹具100的2个爪部39按压发射极上侧端子33的表面，使端子30、33之间的间隙10达到300μm以下。接着，向2个爪部之间的发射极上侧端子33的表面照射激光35，对发射极上侧端子33与发射极下侧端子30进行激光焊接。当在相邻的部位上进行第二次激光焊接时，由于发射极上侧端子33与发射极下侧端子30之间的间隙10在300μm以下，因此2个爪部39不按压发射极上侧端子33的表面亦可。当然也可以在2个爪部39按压的同时进行激光焊接。
激光焊接部位的外部边缘之间的距离优选在2mm以下。若该距离大于2mm，则第一构件与第二构件之间的间隙容易变大，因此第一构件与第二构件的接合强度容易变弱。
图10(a)～(c)是将发射极上侧端子33(第二构件)重叠地载放到发射极下侧端子30(第一构件)上的部位的放大图，图10(a)是对发射极上侧端子33实施了凸部36加工、对发射极下侧端子30实施了凹部37加工的剖视图，图10(b)是将发射极上侧端子33的凸部36与发射极下侧端子30的凹部37嵌合的剖视图，图10(c)是用2个爪部39按压的同时进行激光焊接的剖视图。通过对各端子30、33实施凹凸加工，来对发射极上侧端子33进行定位，从而能够抑制组装时端子发生错位。
此外，为了减小端子30、33之间产生的间隙10，用激光焊接夹具100的2个爪部39对发射极上侧端子33的上表面进行按压，在发射极上侧端子33与配置于其下方的发射极下侧端子30之间的间隙10为300μm以下的状态下照射激光，从而能够得到良好的焊接部34。
图11是表示端子30、33之间的间隙10与焊接部34的剪切强度的关系的图。如图11所示，在发射极上侧端子33与发射极下侧端子30之间隔着间隔件重叠，从而在控制了端子30、33之间的间隙的状态下进行激光焊接，以密接时(无间隙)为基准，用归一值来表示其剪切强度。此处，剪切强度是将端子30、33之间向左右拉伸时的拉伸强度，表示焊接部34的接合强度。
由图11可知，在端子30、33之间的间隙10达到300μm之前，呈现出比无间隙时的剪切强度更大的剪切强度，当间隙达到400μm时，与无间隙时相比，剪切强度下降30％左右，当间隙达到500μm时，无法进行激光焊接。为了得到密接时(无间隙)的剪切强度以上的剪切强度，需要使端子30、33之间的间隙在300μm以下。另外，通过使用图5所示的激光焊接夹具100，能够容易地获得密接时的剪切强度以上的剪切强度。
另外，若间隙超过300μm，则随着剪切强度的下降，会出现焊接部34的热阻增大等影响。因此，端子30、33之间的间隙需要在300μm以下。
图12(a)～(c)是表示端子30、33之间的间隙10与焊接部34的关系的图，图12(a)是端子30、33之间的间隙10为零时的剖视图，图12(b)是端子30、33之间的间隙10在300μm以下时的剖视图，图12(c)是端子30、33之间的间隙10超过300μm时的剖视图。
图12(a)中，当端子30、33之间无间隙(密接)时，在端子30、33的边界部49处，焊接部34a并没有扩展。
图12(b)中，当端子30、33之间的间隙10在300μm以下时，在间隙处，熔融部扩展，从而焊接部34b的面积比无间隙时要大。因此，剪切强度比无间隙时要大。
图12(c)中，当端子30、33之间的间隙10超过300μm时，间隙10处的焊接部34c的中央部变窄，其面积变小，剪切强度下降。
图13是表示没有树脂密封的情况下在激光焊接时产生的飞溅物42(金属飞散)的图。该飞溅物42会附着到半导体芯片27和表面侧导体图案25上而导致绝缘不佳等。因此，通过对半导体芯片37上和接合材料28上进行树脂密封，可以防止上述情况发生。
如上所述，使用上述激光焊接夹具100进行加压，使发射极下侧端子30与发射极上侧端子33的间隙在300μm以下，并利用上述激光焊接方法来接合发射极下侧端子30和发射极上侧端子33，从而能够确保稳定的接合强度。
另外，发射极下侧端子30和发射极上侧端子33的材质优选为热传导率在100W/(m·K)以上的高热传导体。例如适合使用Cu(铜)、Cu-Mo(铜·钼)、Cu-W(铜·钨)、Mo(钼)、W(钨)、Al-SiC(铝·碳化硅)、Si-SiC(硅·碳化硅)等。
另外，发射极下侧端子30的厚度优选在0.5mm以上，发射极上侧端子33的厚度优选在1mm以下。若发射极下侧端子30的厚度小于0.5mm，则激光焊接部会贯穿发射极下侧端子30，因此并不优选。因此，更优选的是0.8mm以上。
另外，若发射极上侧端子33的厚度大于1mm，则激光焊接能量中发射极上侧端子33所消耗的能量的比例会增加，发射极下侧端子30所消耗的能量的比例会减少。其结果是，发射极下侧端子30的熔融部位的面积变小，剪切强度下降，因此并不优选。
另外，优选用容易吸收激光能量的材料，对发射极下侧端子30和发射极上侧端子33双方、或者被激光照射的发射极上侧端子33进行镀敷处理。例如，使用无电镀Ni-P(镍·磷)、无电镀Ni-B(镍·硼)、电镀Ni(镍)。
[实施例4]
图14是本发明的实施例4的半导体装置200的主要部分剖视图。该半导体装置200使用所述实施例1的激光焊接方法和所述实施例2的激光焊接夹具100来制造。
该半导体装置200包括：散热底座21、经由焊料等接合材料22将背面导体图案23固定在该散热底座21上的DCB基板24、以及经由焊料等接合材料26而固定在DCB基板24的表面侧导体图案25上的半导体芯片27。另外，上述DCB基板24由陶瓷绝缘基板24a、固定于背面的背面导体图案23、及固定于表面的表面侧导体图案25构成。半导体装置200还包括：经由焊料等接合材料28固定于所述半导体芯片27的表面电极的发射极下侧端子30、通过激光焊接固定在该发射极下侧端子30上的发射极上侧端子33、以及经由焊料等接合材料29而固定在表面侧导体图案25上的集电极端子31。还具备对整个半导体装置进行密封的树脂密封材料32，使散热底座21的侧面和背面、发射极下侧端子30的表面、集电极端子31的前端和发射极上侧端子33露出。
通过确保所述发射极下侧端子30与所述发射极上侧端子33之间的间隙10在300μm以下，来获得高剪切强度。而且，如图10所示，通过在所述发射极下侧端子30上另外形成凹部37，在发射极上侧端子33上另外形成凸部36，利用该凹凸部位对端子30、33的焊接部位进行定位，从而能够防止半导体装置200组装时发射极上侧端子33发生错位。另外，也可以在所述发射极下侧端子30上另外形成凸部，在发射极上侧端子33上另外形成凹部，利用该凹凸部位对端子30、33的焊接部位进行定位，从而防止半导体装置200组装时发射极上侧端子33发生错位。凹部也可以是贯通孔
另外，该半导体装置200中，也可以在发射极上侧端子33的表面，夹着焊接部34(焊接痕迹)而在两处形成2道长度为1mm左右的直线状的压接痕迹。
标号说明
1  第一被焊接构件(第一构件)
2  第二被焊接构件(第二构件)
4  力
5、34  焊接部
6  照射面
10  间隙
21、51  散热底座
22、26、28、29、52、56  接合材料
23、53  背面导体图案
24、54  DCB基板
24a、54a  陶瓷绝缘基板
25、55  表面导体图案
27、57  半导体芯片
30  发射极下侧端子(第一构件)
30a  背面
31  集电极端子
32  树脂密封材料
32a  表面
33  发射极上侧端子(第二构件)
35  激光
36  凸部
37  凹部
39  爪部(按压部)
40  支柱
42  飞溅物
49  边界部
58  端子嵌入型树脂壳体
59、60、61  端子
62  接合线
63  封胶材料
100  激光焊接夹具
200  半导体装置
500  功率半导体模块
D1、D2  直径
L  长度
T  间隔

Claims (12)

1.一种半导体装置，其特征在于，包括：
陶瓷绝缘基板；
固定于所述陶瓷绝缘基板的表面的表面导体图案；
与所述表面导体图案电连接的半导体芯片；
与所述半导体芯片电连接的第一构件；以及
在一个以上的部位与所述第一构件激光焊接在一起并电连接的第二构件，
在所述激光焊接部位处，所述第一构件与所述第二构件之间的间隙在300μm以下。
2.如权利要求1所述的半导体装置，其特征在于，
所述激光焊接部位的外部边缘之间的距离在2mm以下。
3.如权利要求1或2所述的半导体装置，其特征在于，
所述第一构件的厚度在0.5mm以上，所述第二构件的厚度在1mm以下。
4.如权利要求1或2所述的半导体装置，其特征在于，
至少所述激光焊接部位之间的所述第一构件和所述第二构件为平面。
5.如权利要求1或2所述的半导体装置，其特征在于，
在所述第一构件和所述第二构件设置有用于对所述第一构件与所述第二构件进行定位的嵌合部，所述激光焊接部位在所述嵌合部以外的部位。
6.如权利要求1或2所述的半导体装置，其特征在于，
具备对所述陶瓷绝缘基板、所述表面导体图案、所述半导体芯片和所述第一构件的一部分进行密封的密封材料，一个以上的所述激光焊接部位没有被所述密封材料密封。
7.一种激光焊接方法，使用具有多个按压部的激光焊接夹具，其特征在于，包括以下工序：
将第二构件载放到第一构件上的设置工序；
利用多个所述按压部，朝着将所述第二构件向所述第一构件按压的方向对所述第二构件进行加压，以使所述第一构件与所述第二构件之间的间隙达到300μm以下的加压工序；以及
在进行所述加压工序的同时，向所述按压部之间的所述第二构件的表面照射激光，从而对所述第一构件与所述第二构件进行激光焊接的第一焊接工序。
8.如权利要求7所述的激光焊接方法，其特征在于，
在所述第一焊接工序之后，具备在所述第一构件与所述第二构件的间隙为300μm以下的区域中对所述第一构件与所述第二构件进行激光焊接的第二焊接工序。
9.如权利要求8所述的激光焊接方法，其特征在于，
所述激光焊接部位的中心点之间的距离在4mm以下。
10.如权利要求8所述的激光焊接方法，其特征在于，
在所述第一构件和所述第二构件设置有用于对所述第一构件与所述第二构件进行定位的嵌合部，
所述激光焊接部位在所述嵌合部以外的部位。
11.如权利要求7至10的任一项所述的激光焊接方法，其特征在于，
该激光焊接方法是具备如下构件的半导体装置的激光焊接方法：陶瓷绝缘基板；固定于所述陶瓷绝缘基板的表面的表面导体图案；与所述表面导体图案电连接的半导体芯片；与所述半导体芯片电连接的第一构件；以及在一个以上部位与所述第一构件激光焊接并电连接的第二构件，
在所述激光焊接方法中，在所述设置工序之前，具备用密封材料对所述陶瓷绝缘基板、所述表面导体图案、所述半导体芯片和所述第一构件的一部分进行密封的密封工序。
12.一种激光焊接夹具，其特征在于，
具备多个按压部，
所述按压部之间的间隔是在用激光进行焊接的宽度的两侧分别加上0.5mm以上且3mm以下的距离后得到的间隔。
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