CN104716086A - 半导体装置的制造方法以及半导体装置 - Google Patents
半导体装置的制造方法以及半导体装置 Download PDFInfo
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- CN104716086A CN104716086A CN201410575580.7A CN201410575580A CN104716086A CN 104716086 A CN104716086 A CN 104716086A CN 201410575580 A CN201410575580 A CN 201410575580A CN 104716086 A CN104716086 A CN 104716086A
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- 238000000034 method Methods 0.000 title claims abstract description 92
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- 239000000758 substrate Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (20)
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JP2013-256070 | 2013-12-11 | ||
JP2013256070A JP2015115446A (ja) | 2013-12-11 | 2013-12-11 | 半導体装置の製造方法 |
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CN104716086B CN104716086B (zh) | 2018-04-06 |
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