CN104608055B - 研磨装置及研磨方法 - Google Patents

研磨装置及研磨方法 Download PDF

Info

Publication number
CN104608055B
CN104608055B CN201410605525.8A CN201410605525A CN104608055B CN 104608055 B CN104608055 B CN 104608055B CN 201410605525 A CN201410605525 A CN 201410605525A CN 104608055 B CN104608055 B CN 104608055B
Authority
CN
China
Prior art keywords
grinding
substrate
polishing
motor
current signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410605525.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN104608055A (zh
Inventor
高桥太郎
铃木佑多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of CN104608055A publication Critical patent/CN104608055A/zh
Application granted granted Critical
Publication of CN104608055B publication Critical patent/CN104608055B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN201410605525.8A 2013-11-01 2014-10-31 研磨装置及研磨方法 Active CN104608055B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-228240 2013-11-01
JP2013228240A JP6030041B2 (ja) 2013-11-01 2013-11-01 研磨装置および研磨方法

Publications (2)

Publication Number Publication Date
CN104608055A CN104608055A (zh) 2015-05-13
CN104608055B true CN104608055B (zh) 2017-09-22

Family

ID=53007324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410605525.8A Active CN104608055B (zh) 2013-11-01 2014-10-31 研磨装置及研磨方法

Country Status (6)

Country Link
US (1) US9272389B2 (enExample)
JP (1) JP6030041B2 (enExample)
KR (2) KR101711259B1 (enExample)
CN (1) CN104608055B (enExample)
SG (1) SG10201407062PA (enExample)
TW (1) TWI568539B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
SG10201803908SA (en) * 2014-09-02 2018-06-28 Ebara Corp End point detection method, polishing apparatus, and polishing method
TWI547348B (zh) * 2015-08-31 2016-09-01 力晶科技股份有限公司 化學機械研磨裝置與方法
JP6775354B2 (ja) 2015-10-16 2020-10-28 株式会社荏原製作所 研磨装置、及び、研磨方法
US10744617B2 (en) * 2015-10-16 2020-08-18 Ebara Corporation Polishing endpoint detection method
CN109689295B (zh) * 2016-09-15 2021-08-06 应用材料公司 化学机械抛光智能环
JP6357260B2 (ja) * 2016-09-30 2018-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
CN108621033B (zh) * 2017-03-21 2020-04-07 中芯国际集成电路制造(上海)有限公司 研磨垫的研磨方法
TWI789385B (zh) 2017-04-21 2023-01-11 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
KR101955274B1 (ko) * 2017-04-24 2019-03-08 서우테크놀로지 주식회사 반도체 패키지 그라인더
CN109202719B (zh) * 2017-07-03 2021-02-02 株式会社安川电机 研磨工艺的控制方法
JP7098311B2 (ja) * 2017-12-05 2022-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
US11446783B2 (en) 2018-03-12 2022-09-20 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN108555771A (zh) * 2018-04-25 2018-09-21 清华大学 Cmp设备的终点确定方法、终点确定系统和cmp系统
CN108807228B (zh) * 2018-06-05 2020-10-16 安徽省华腾农业科技有限公司经开区分公司 一种半导体芯片生产工艺
KR102570975B1 (ko) * 2018-06-18 2023-08-28 주식회사 케이씨텍 금속 박막 두께 검출 장치 및 그 방법
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
JP7084811B2 (ja) * 2018-07-13 2022-06-15 株式会社荏原製作所 研磨装置および研磨方法
US12447578B2 (en) 2018-09-26 2025-10-21 Applied Materials, Inc. Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
CN109531424B (zh) * 2019-01-09 2024-04-09 中国工程物理研究院激光聚变研究中心 抛光盘包络式修整方法及其装置
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
US11658078B2 (en) 2020-05-14 2023-05-23 Applied Materials, Inc. Using a trained neural network for use in in-situ monitoring during polishing and polishing system
KR20240169125A (ko) 2020-06-24 2024-12-02 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모 보상을 이용한 기판 층 두께의 결정
JP7421460B2 (ja) * 2020-09-29 2024-01-24 株式会社荏原製作所 研磨装置、および研磨パッドの交換時期を決定する方法
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring
CN114121646B (zh) * 2021-11-29 2025-01-28 上海华力集成电路制造有限公司 一种抛光方法、装置、存储介质、模组及机台
US20230321696A1 (en) * 2022-04-07 2023-10-12 Ebara Corporation Substrate processing system and substrate processing method

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876265A (en) * 1995-04-26 1999-03-02 Fujitsu Limited End point polishing apparatus and polishing method
JPH10202513A (ja) * 1997-01-22 1998-08-04 Ebara Corp ポリッシングの終点検知方法
JP2001018161A (ja) * 1999-07-07 2001-01-23 Ebara Corp 研磨装置
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001198813A (ja) 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法
JP2001219354A (ja) * 2000-02-04 2001-08-14 Kawasaki Heavy Ind Ltd 研磨システム
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6878038B2 (en) * 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
EP1247616B1 (en) * 2001-04-02 2006-07-05 Infineon Technologies AG Method for conditioning a polishing pad surface
JP2003037090A (ja) * 2001-07-24 2003-02-07 Hitachi Ltd 半導体集積回路装置の製造方法
US20040011462A1 (en) * 2002-06-28 2004-01-22 Lam Research Corporation Method and apparatus for applying differential removal rates to a surface of a substrate
US6945845B2 (en) * 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
JP4202365B2 (ja) * 2006-03-07 2008-12-24 ファナック株式会社 力制御装置
JP4790475B2 (ja) * 2006-04-05 2011-10-12 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚測定プログラム
JP2009028856A (ja) * 2007-07-27 2009-02-12 Tokyo Seimitsu Co Ltd トルク変化を利用した研磨終端時点検知方法及びその装置
JP5052413B2 (ja) 2008-05-27 2012-10-17 株式会社荏原製作所 基板観察装置及び基板研磨装置
JP2011000647A (ja) 2009-06-16 2011-01-06 Ebara Corp 研磨監視方法
US8388408B2 (en) 2008-10-10 2013-03-05 Ebara Corporation Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
US20100120331A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
JP5236596B2 (ja) * 2009-08-19 2013-07-17 ファナック株式会社 加工ロボットシステム
JP5511600B2 (ja) * 2010-09-09 2014-06-04 株式会社荏原製作所 研磨装置
US20130065493A1 (en) * 2011-08-09 2013-03-14 Taro Takahashi Polishing monitoring method, polishing end point detection method, and polishing apparatus

Also Published As

Publication number Publication date
KR20170015406A (ko) 2017-02-08
KR101711259B1 (ko) 2017-02-28
TWI568539B (zh) 2017-02-01
TW201527045A (zh) 2015-07-16
JP2015085487A (ja) 2015-05-07
US9272389B2 (en) 2016-03-01
JP6030041B2 (ja) 2016-11-24
CN104608055A (zh) 2015-05-13
US20150125971A1 (en) 2015-05-07
KR20150051150A (ko) 2015-05-11
KR101901508B1 (ko) 2018-09-21
SG10201407062PA (en) 2015-06-29

Similar Documents

Publication Publication Date Title
CN104608055B (zh) 研磨装置及研磨方法
CN103358222B (zh) 涡电流传感器以及研磨方法和装置
JP6033751B2 (ja) 研磨方法
JP6050571B2 (ja) 研磨監視方法および研磨装置
JP7179586B2 (ja) 渦電流検出装置及び研磨装置
KR20190037342A (ko) 화학적 기계적 연마를 위한 연마 패드 두께 모니터링
JPH0760642A (ja) 電解ドレッシング研削方法及び装置
US9068814B2 (en) Polishing monitoring method, polishing apparatus and monitoring apparatus
TW201018544A (en) Polishing method and apparatus
US20180079048A1 (en) Overpolishing based on electromagnetic inductive monitoring of trench depth
JP5705093B2 (ja) 研磨終点検出方法および研磨装置
US7258595B2 (en) Polishing apparatus
CN107617969B (zh) 膜厚测定装置、研磨装置、膜厚测定方法及研磨方法
US20250326084A1 (en) Eddy current monitoring to detect vibration in polishing
WO2018057623A1 (en) Endpoint detection with compensation for filtering
JP6445241B2 (ja) 渦電流センサ
JPH06315850A (ja) 研磨終点検出装置
JP2015231014A (ja) 研磨装置および研磨方法
JPH0740240A (ja) セラミック板研削方法及び装置
JP2009099788A (ja) ウェハの製造方法
JPH09189542A (ja) ウェーハの厚さ測定方法及びその装置
JPH1170466A (ja) 圧電素板の研磨装置とその研磨方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant