JP6030041B2 - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法 Download PDFInfo
- Publication number
- JP6030041B2 JP6030041B2 JP2013228240A JP2013228240A JP6030041B2 JP 6030041 B2 JP6030041 B2 JP 6030041B2 JP 2013228240 A JP2013228240 A JP 2013228240A JP 2013228240 A JP2013228240 A JP 2013228240A JP 6030041 B2 JP6030041 B2 JP 6030041B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- dresser
- wafer
- substrate
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013228240A JP6030041B2 (ja) | 2013-11-01 | 2013-11-01 | 研磨装置および研磨方法 |
| TW103137162A TWI568539B (zh) | 2013-11-01 | 2014-10-28 | 研磨裝置及研磨方法 |
| KR1020140147073A KR101711259B1 (ko) | 2013-11-01 | 2014-10-28 | 연마 장치 및 연마 방법 |
| SG10201407062PA SG10201407062PA (en) | 2013-11-01 | 2014-10-29 | Polishing apparatus and polishing method |
| US14/527,714 US9272389B2 (en) | 2013-11-01 | 2014-10-29 | Polishing apparatus and polishing method |
| CN201410605525.8A CN104608055B (zh) | 2013-11-01 | 2014-10-31 | 研磨装置及研磨方法 |
| KR1020170010910A KR101901508B1 (ko) | 2013-11-01 | 2017-01-24 | 연마 장치 및 연마 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013228240A JP6030041B2 (ja) | 2013-11-01 | 2013-11-01 | 研磨装置および研磨方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015085487A JP2015085487A (ja) | 2015-05-07 |
| JP2015085487A5 JP2015085487A5 (enExample) | 2016-04-21 |
| JP6030041B2 true JP6030041B2 (ja) | 2016-11-24 |
Family
ID=53007324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013228240A Active JP6030041B2 (ja) | 2013-11-01 | 2013-11-01 | 研磨装置および研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9272389B2 (enExample) |
| JP (1) | JP6030041B2 (enExample) |
| KR (2) | KR101711259B1 (enExample) |
| CN (1) | CN104608055B (enExample) |
| SG (1) | SG10201407062PA (enExample) |
| TW (1) | TWI568539B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200016720A1 (en) * | 2018-07-13 | 2020-01-16 | Ebara Corporation | Polishing apparatus and polishing method |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130017762A1 (en) * | 2011-07-15 | 2013-01-17 | Infineon Technologies Ag | Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine |
| WO2016035673A1 (ja) * | 2014-09-02 | 2016-03-10 | 株式会社荏原製作所 | 終点検出方法、研磨装置、及び研磨方法 |
| TWI547348B (zh) * | 2015-08-31 | 2016-09-01 | 力晶科技股份有限公司 | 化學機械研磨裝置與方法 |
| US10744617B2 (en) * | 2015-10-16 | 2020-08-18 | Ebara Corporation | Polishing endpoint detection method |
| JP6775354B2 (ja) | 2015-10-16 | 2020-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| KR102564376B1 (ko) * | 2016-09-15 | 2023-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기계적 폴리싱 스마트 링 |
| JP6357260B2 (ja) | 2016-09-30 | 2018-07-11 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
| CN108621033B (zh) * | 2017-03-21 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 研磨垫的研磨方法 |
| TWI816620B (zh) | 2017-04-21 | 2023-09-21 | 美商應用材料股份有限公司 | 使用神經網路來監測的拋光裝置 |
| KR101955274B1 (ko) * | 2017-04-24 | 2019-03-08 | 서우테크놀로지 주식회사 | 반도체 패키지 그라인더 |
| CN109202719B (zh) * | 2017-07-03 | 2021-02-02 | 株式会社安川电机 | 研磨工艺的控制方法 |
| JP7098311B2 (ja) * | 2017-12-05 | 2022-07-11 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
| KR102853782B1 (ko) | 2018-03-12 | 2025-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마의 인-시튜 모니터링 동안의 필터링 |
| TWI825075B (zh) | 2018-04-03 | 2023-12-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
| CN108555771A (zh) * | 2018-04-25 | 2018-09-21 | 清华大学 | Cmp设备的终点确定方法、终点确定系统和cmp系统 |
| CN108807228B (zh) * | 2018-06-05 | 2020-10-16 | 安徽省华腾农业科技有限公司经开区分公司 | 一种半导体芯片生产工艺 |
| KR102570975B1 (ko) * | 2018-06-18 | 2023-08-28 | 주식회사 케이씨텍 | 금속 박막 두께 검출 장치 및 그 방법 |
| TWI828706B (zh) * | 2018-06-20 | 2024-01-11 | 美商應用材料股份有限公司 | 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統 |
| WO2020067914A1 (en) | 2018-09-26 | 2020-04-02 | Applied Materials, Inc. | Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring |
| CN109531424B (zh) * | 2019-01-09 | 2024-04-09 | 中国工程物理研究院激光聚变研究中心 | 抛光盘包络式修整方法及其装置 |
| JP7374710B2 (ja) * | 2019-10-25 | 2023-11-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP7640562B2 (ja) | 2020-05-14 | 2025-03-05 | アプライド マテリアルズ インコーポレイテッド | 研磨中のインシトゥモニタリングで使用するためのニューラルネットワークをトレーニングするための技術及び研磨システム |
| WO2021262450A1 (en) | 2020-06-24 | 2021-12-30 | Applied Materials, Inc. | Determination of substrate layer thickness with polishing pad wear compensation |
| US11794302B2 (en) | 2020-12-15 | 2023-10-24 | Applied Materials, Inc. | Compensation for slurry composition in in-situ electromagnetic inductive monitoring |
| CN114121646B (zh) * | 2021-11-29 | 2025-01-28 | 上海华力集成电路制造有限公司 | 一种抛光方法、装置、存储介质、模组及机台 |
| US20230321696A1 (en) * | 2022-04-07 | 2023-10-12 | Ebara Corporation | Substrate processing system and substrate processing method |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5876265A (en) * | 1995-04-26 | 1999-03-02 | Fujitsu Limited | End point polishing apparatus and polishing method |
| JPH10202513A (ja) * | 1997-01-22 | 1998-08-04 | Ebara Corp | ポリッシングの終点検知方法 |
| JP2001018161A (ja) * | 1999-07-07 | 2001-01-23 | Ebara Corp | 研磨装置 |
| JP2001079752A (ja) * | 1999-09-08 | 2001-03-27 | Hitachi Ltd | 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法 |
| JP2001198813A (ja) | 2000-01-13 | 2001-07-24 | Toshiba Corp | 研磨装置及びその研磨方法 |
| JP2001219354A (ja) * | 2000-02-04 | 2001-08-14 | Kawasaki Heavy Ind Ltd | 研磨システム |
| US6797623B2 (en) * | 2000-03-09 | 2004-09-28 | Sony Corporation | Methods of producing and polishing semiconductor device and polishing apparatus |
| US6878038B2 (en) * | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
| EP1247616B1 (en) * | 2001-04-02 | 2006-07-05 | Infineon Technologies AG | Method for conditioning a polishing pad surface |
| JP2003037090A (ja) * | 2001-07-24 | 2003-02-07 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US20040011462A1 (en) * | 2002-06-28 | 2004-01-22 | Lam Research Corporation | Method and apparatus for applying differential removal rates to a surface of a substrate |
| US6945845B2 (en) * | 2003-03-04 | 2005-09-20 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with non-conductive elements |
| US7311004B2 (en) * | 2003-03-10 | 2007-12-25 | Capstan Ag Systems, Inc. | Flow control and operation monitoring system for individual spray nozzles |
| JP4451111B2 (ja) | 2003-10-20 | 2010-04-14 | 株式会社荏原製作所 | 渦電流センサ |
| JP4202365B2 (ja) * | 2006-03-07 | 2008-12-24 | ファナック株式会社 | 力制御装置 |
| JP4790475B2 (ja) * | 2006-04-05 | 2011-10-12 | 株式会社荏原製作所 | 研磨装置、研磨方法、および基板の膜厚測定プログラム |
| JP2009028856A (ja) * | 2007-07-27 | 2009-02-12 | Tokyo Seimitsu Co Ltd | トルク変化を利用した研磨終端時点検知方法及びその装置 |
| JP5052413B2 (ja) | 2008-05-27 | 2012-10-17 | 株式会社荏原製作所 | 基板観察装置及び基板研磨装置 |
| US8388408B2 (en) | 2008-10-10 | 2013-03-05 | Ebara Corporation | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method |
| JP2011000647A (ja) | 2009-06-16 | 2011-01-06 | Ebara Corp | 研磨監視方法 |
| US20100120331A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
| JP5236596B2 (ja) * | 2009-08-19 | 2013-07-17 | ファナック株式会社 | 加工ロボットシステム |
| JP5511600B2 (ja) * | 2010-09-09 | 2014-06-04 | 株式会社荏原製作所 | 研磨装置 |
| US20130065493A1 (en) * | 2011-08-09 | 2013-03-14 | Taro Takahashi | Polishing monitoring method, polishing end point detection method, and polishing apparatus |
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2013
- 2013-11-01 JP JP2013228240A patent/JP6030041B2/ja active Active
-
2014
- 2014-10-28 TW TW103137162A patent/TWI568539B/zh active
- 2014-10-28 KR KR1020140147073A patent/KR101711259B1/ko active Active
- 2014-10-29 US US14/527,714 patent/US9272389B2/en active Active
- 2014-10-29 SG SG10201407062PA patent/SG10201407062PA/en unknown
- 2014-10-31 CN CN201410605525.8A patent/CN104608055B/zh active Active
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2017
- 2017-01-24 KR KR1020170010910A patent/KR101901508B1/ko active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200016720A1 (en) * | 2018-07-13 | 2020-01-16 | Ebara Corporation | Polishing apparatus and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US9272389B2 (en) | 2016-03-01 |
| JP2015085487A (ja) | 2015-05-07 |
| KR20170015406A (ko) | 2017-02-08 |
| TWI568539B (zh) | 2017-02-01 |
| US20150125971A1 (en) | 2015-05-07 |
| CN104608055B (zh) | 2017-09-22 |
| TW201527045A (zh) | 2015-07-16 |
| KR20150051150A (ko) | 2015-05-11 |
| CN104608055A (zh) | 2015-05-13 |
| KR101711259B1 (ko) | 2017-02-28 |
| KR101901508B1 (ko) | 2018-09-21 |
| SG10201407062PA (en) | 2015-06-29 |
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