WO2016035673A1 - 終点検出方法、研磨装置、及び研磨方法 - Google Patents
終点検出方法、研磨装置、及び研磨方法 Download PDFInfo
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- WO2016035673A1 WO2016035673A1 PCT/JP2015/074254 JP2015074254W WO2016035673A1 WO 2016035673 A1 WO2016035673 A1 WO 2016035673A1 JP 2015074254 W JP2015074254 W JP 2015074254W WO 2016035673 A1 WO2016035673 A1 WO 2016035673A1
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- polishing
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- end point
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- drive
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- 238000005498 polishing Methods 0.000 title claims abstract description 440
- 238000001514 detection method Methods 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title claims description 69
- 238000007517 polishing process Methods 0.000 claims abstract description 59
- 238000003825 pressing Methods 0.000 claims abstract description 11
- 230000003321 amplification Effects 0.000 claims description 62
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 62
- 238000004804 winding Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 description 57
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- 230000000052 comparative effect Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 19
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- 238000005259 measurement Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S13/50—Systems of measurement based on relative movement of target
Definitions
- the present invention relates to an end point detection method, a polishing apparatus, and a polishing method.
- the polishing apparatus includes a polishing table for holding a polishing pad for polishing a polishing object, and a top ring for holding and pressing the polishing object against the polishing pad.
- a polishing table for holding a polishing pad for polishing a polishing object
- a top ring for holding and pressing the polishing object against the polishing pad.
- Each of the polishing table and the top ring is rotationally driven by a drive unit (for example, a motor).
- the polishing object is polished by flowing a liquid (slurry) containing an abrasive onto the polishing pad and pressing the polishing object held on the top ring.
- polishing equipment In polishing equipment, if the polishing target is not polished sufficiently, there is a risk of short circuit without insulation between the circuits, and in the case of overpolishing, the resistance value increases due to the reduced cross-sectional area of the wiring. Or the wiring itself is completely removed and the circuit itself is not formed. For this reason, the polishing apparatus is required to detect the optimum polishing end point.
- polishing end point detection means As one of polishing end point detection means, a method of detecting a change in polishing friction force when polishing is transferred to a different material is known.
- a semiconductor wafer which is an object to be polished, has a laminated structure made of different materials such as a semiconductor, a conductor, and an insulator, and the friction coefficient differs between different material layers. For this reason, this is a method of detecting a change in the polishing frictional force caused by the shift of polishing to a different material layer. According to this method, when the polishing reaches a different material layer, the end point of the polishing is reached.
- the polishing apparatus can also detect the polishing end point by detecting a change in the polishing frictional force when the polishing surface of the object to be polished is flattened from a non-flat state.
- the polishing friction force generated when polishing the object to be polished appears as a driving load of the driving unit.
- the drive unit is an electric motor
- the drive load can be measured as a current flowing through the motor. Therefore, the motor current (torque current) can be detected by the current sensor, and the polishing end point can be detected based on the detected change in the motor current.
- the polishing end point can be detected based on the detected change in the motor current.
- polishing apparatus there are a plurality of polishing conditions depending on combinations of the type of polishing object, the type of polishing recipe, the type of polishing pad, the type of polishing abrasive liquid (slurry), and the like.
- a change (feature point) in torque current may not appear greatly.
- the change in torque current is small, there is a possibility that the end point of polishing cannot be detected properly due to the influence of waviness generated in the noise or waveform, and problems such as overpolishing may occur.
- an object of one embodiment of the present invention is to satisfactorily detect a change in torque current without changing an existing polishing recipe and improve the accuracy of detection of a polishing end point.
- Another object of one embodiment of the present invention is to detect a change in torque current satisfactorily even when the change in torque current is small and improve the accuracy of detection of the polishing end point.
- One aspect of the end point detection method of the present invention is made in view of the above problems, and includes a polishing table for holding a polishing pad, or a holding unit for holding an object to be polished and pressing it against the polishing pad.
- the drive with respect to a change in the drive load of the drive unit in a drive control unit for controlling the drive current
- An adjustment step for adjusting a current control parameter related to a change in current, and the drive unit based on the current control parameter adjusted by the adjustment step A detection step of detecting a drive current supplied, characterized in that it comprises, and endpoint detection step of detecting the end point of polishing on the basis of the detected driving current by the detecting step.
- the end point detection method it is determined whether or not to add the polishing condition of the polishing process being executed to the specific polishing condition based on the drive current detected by the detection step during the execution of the polishing process.
- a second determination step can be further provided.
- the second determination step is being executed when the change in the drive current detected by the detection step when the drive load of the drive unit has changed is smaller than a threshold value.
- the polishing conditions of the polishing process can be added to the specific polishing conditions.
- the end point detection step detects a polishing end point based on a change in drive current detected by the detection step, and the second determination step includes the polishing end point by the end point detection step. If no is detected, the polishing conditions of the ongoing polishing process can be added to the specific polishing conditions.
- the adjustment step may adjust the current control parameter so that a change in the drive current becomes larger with respect to a change in the drive load of the drive unit.
- the adjustment step includes: The control gain in the control based on the deviation can be increased.
- the adjustment step can adjust the current control parameter in a part of the plurality of steps.
- the polishing condition may include at least one of a type of a polishing object, a type of a polishing recipe, a type of a polishing pad, and a type of a polishing abrasive liquid.
- One aspect of the polishing apparatus of the present invention is a driving unit for rotationally driving a polishing table for holding a polishing pad or a holding unit for holding an object to be polished and pressing it against the polishing pad,
- a drive control unit for controlling a drive current supplied to the drive unit, and driving of the drive unit in the drive control unit when a polishing condition of a polishing process to be performed matches a predetermined polishing condition set in advance.
- an adjustment unit that adjusts a current control parameter related to a change in the drive current with respect to a change in a load.
- the apparatus further comprises a determination unit that determines whether or not the polishing condition of the polishing process to be performed matches a predetermined polishing condition, and the adjustment unit is configured to When it is determined that the polishing condition of the polishing process matches the specific polishing condition, the current control parameter in the drive control unit can be adjusted.
- the polishing apparatus further includes a current detection unit that detects a drive current supplied from the drive control unit to the drive unit during a polishing process, and the determination unit is detected by the current detection unit. Based on the drive current, it can be determined whether or not to add the polishing conditions of the polishing process being executed to the specific polishing conditions.
- the determination unit performs the polishing that is being performed when a change in drive current detected by the current detection unit when a drive load of the drive unit changes is smaller than a threshold value.
- Process polishing conditions can be added to the specific polishing conditions.
- the polishing apparatus further includes an end point detection unit that detects an end point of polishing based on a change in driving current detected by the current detection unit, and the determination unit detects the end point of polishing by the end point detection unit. If not, the polishing conditions of the ongoing polishing process can be added to the specific polishing conditions.
- the adjustment unit can adjust the current control parameter such that a change in the drive current becomes larger with respect to a change in the drive load of the drive unit.
- the drive control unit controls the drive current based on a deviation between an actual rotation speed of the polishing table or the holding unit and a target rotation speed, and the adjustment unit is based on the deviation.
- the control gain in the control can be increased.
- the adjustment unit can adjust the current control parameter in a part of the plurality of steps.
- the polishing condition may include at least one of a type of an object to be polished, a type of a polishing recipe, a type of a polishing pad, and a type of a polishing abrasive liquid.
- a polishing apparatus for polishing the surface of an object to be polished, wherein the first electric motor rotates and drives a polishing table for holding a polishing pad. And a second electric motor that rotationally drives a holding portion for holding and pressing the object to be polished against the polishing pad, and at least one of the first and second electric motors Comprises a plurality of phase windings, and the polishing apparatus is detected by a current detection unit that detects a current of at least two phases of the first and / or second electric motors, and the current detection unit.
- a rectification calculation unit that rectifies at least two-phase current detection values, adds and / or multiplies the rectified signal and outputs the rectified signal, and a change in the output of the rectification calculation unit. Indicates the end of surface polishing
- a polishing apparatus having and end detector for detecting a polishing end point.
- the following effects are obtained. That is, when only one-phase driving current is detected, the detected current value is smaller than that in this embodiment. According to this embodiment, since the current value is increased by rectification and addition, the detection accuracy is improved.
- motors with multiple phases within one motor such as an AC servo motor, manage the rotational speed of the motor without managing the current of each phase individually, so the current value varies between phases. There may be. Therefore, conventionally, there is a possibility that a current value of a phase having a smaller current value than other phases is detected, and there is a possibility that a phase having a large current value cannot be used. According to the present embodiment, since a plurality of phases of drive currents are added, a phase having a large current value can be used, so that detection accuracy is improved.
- the ripple is smaller than when only one phase of drive current is used. For this reason, since the detected alternating current is used for the determination of the end point, the ripple of the direct current obtained by the effective value conversion for converting into the direct current is reduced, and the end point detection accuracy is improved.
- the current to be added may be at least one phase of the first electric motor and at least one phase of the second electric motor. Thereby, a signal value can be made larger than the case where only the current value of one motor is used.
- Both addition and multiplication can be performed. In this case, both the above-described addition effect and multiplication effect can be obtained.
- the numerical value (multiplier) to be multiplied may be changed for each phase. If the result of the addition exceeds the input range of the subsequent processing circuit, the multiplier is made smaller than one.
- the rectification may be either half-wave rectification or full-wave rectification, but full-wave rectification is preferable to half-wave rectification because the amplitude is increased and the ripple is reduced.
- the end point detection unit includes an amplification unit that amplifies the output of the rectification calculation unit, and noise included in the output of the rectification calculation unit At least one of a noise removing unit that removes the noise and a subtracting unit that subtracts a predetermined amount from the output of the rectification computing unit.
- the torque current change can be increased by amplification. By removing the noise, the change of the current buried in the noise can be made obvious.
- the subtraction unit has the following effects.
- the detected current usually includes a current portion that changes as the friction force changes, and a constant amount of current portion (bias) that does not change when the friction force changes. By removing this bias, it is possible to extract only the current portion that depends on the change in the friction force and amplify it to the maximum amplitude within the signal processing range, and detect the end point from the change in the friction force. The accuracy of the end point detection method is improved.
- amplification part when it has two or more of an amplification part, a subtraction part, and a noise removal part, these are cascade-connected.
- the processing result is sent to the noise removal unit and processed in the noise removal unit, or the noise removal unit performs the first processing, The processing result is sent to the amplification unit for processing.
- the end point detection unit includes the amplification unit, the subtraction unit, and the noise removal unit, and is amplified by the amplification unit.
- the signal is subtracted by the subtracting unit, and noise is removed from the subtracted signal by the noise removing unit.
- amplification, subtraction, and noise removal are preferably performed in this order, but are not necessarily performed in this order.
- the order of noise removal, subtraction, and amplification is also possible.
- the end point detection unit includes a second amplification unit that further amplifies the signal from which noise has been removed by the noise removal unit. According to such a form, the magnitude of the current reduced by noise removal can be recovered, and the accuracy of the end point detection method is improved.
- the end point detection unit includes the amplification unit and a control unit that controls amplification characteristics of the amplification unit. According to this form, it is possible to select an optimum amplification characteristic (amplification factor, frequency characteristic, etc.) according to the material and structure of the object to be polished.
- the end point detection unit includes the noise removal unit and a control unit that controls a noise removal characteristic of the noise removal unit.
- a control unit that controls a noise removal characteristic of the noise removal unit.
- the end point detection unit includes the subtraction unit and a control unit that controls a subtraction characteristic of the subtraction unit. According to such a form, it is possible to select an optimal subtraction characteristic (subtraction amount, frequency characteristic, etc.) according to the material and structure of the object to be polished.
- the end point detection unit includes a control unit that controls amplification characteristics of the second amplification unit.
- the optimal second amplification characteristic amplification factor, frequency characteristic, etc.
- the optimal second amplification characteristic can be selected according to the material, structure, etc. of the object to be polished.
- a polishing method is provided.
- a first electric motor that rotationally drives a polishing table for holding a polishing pad
- a second electric motor that rotationally drives a holding unit for holding an object to be polished and pressing it against the polishing pad.
- the method includes a current detection step of detecting a current of at least two phases of the first and / or second electric motors, and a rectified signal by rectifying the detected current detection values of at least two phases.
- the end point detection step amplifies the output of the rectification operation step, and removes noise included in the output of the rectification operation step. At least one of a noise removing step of subtracting and a subtracting step of subtracting a predetermined amount from the output of the rectifying step. According to this form, the same effect as another 2nd form can be achieved.
- the signal amplified in the amplification step is compared with the signal in the subtraction step. A fixed amount of subtraction is performed, and noise is removed from the subtracted signal in the noise removal step. According to this form, the same effect as another 3rd form can be achieved.
- the end point detection step further includes a second amplification step for further amplifying the signal from which noise has been removed in the noise removal step.
- a second amplification step for further amplifying the signal from which noise has been removed in the noise removal step.
- FIG. 1 is a diagram showing a basic configuration of a polishing apparatus according to the present embodiment.
- FIG. 2 is a diagram for explaining the processing contents of the two-phase to three-phase converter.
- FIG. 3 is a diagram schematically illustrating a configuration related to drive current adjustment of the polishing apparatus according to the first embodiment.
- FIG. 4 is a diagram schematically showing a configuration relating to drive current adjustment of the polishing apparatus according to the second embodiment.
- FIG. 5 is a diagram schematically showing changes in drive current according to the first and second embodiments.
- FIG. 6 is a diagram schematically showing changes in drive current according to the first and second embodiments.
- FIG. 7 is a diagram illustrating an example of a manner of detecting the end point of polishing.
- FIG. 1 is a diagram showing a basic configuration of a polishing apparatus according to the present embodiment.
- FIG. 2 is a diagram for explaining the processing contents of the two-phase to three-phase converter.
- FIG. 3 is a diagram schematically illustrating
- FIG. 8 is a flowchart of the current adjustment method by the polishing apparatus of the first and second embodiments.
- FIG. 9 is a flowchart of the current adjustment method by the polishing apparatus of the first and second embodiments.
- FIG. 10 is a diagram illustrating a basic configuration of a polishing apparatus according to another embodiment.
- FIG. 11 is a block diagram showing details of the end point detection unit 29.
- FIG. 12 is a graph showing the contents of signal processing by the end point detection unit 29.
- FIG. 13 is a graph showing the contents of signal processing by the end point detection unit 29.
- FIG. 14 is a block diagram and a graph showing an end point detection method of a comparative example.
- FIG. 15A is a graph showing the output 56a of the effective value converter 56 of the comparative example, and FIG.
- FIG. 15B is a graph showing the output 48a of the effective value converter 48 of the present embodiment.
- FIG. 16 is a graph showing the output 56a of the effective value converter 56 of the comparative example and the output 48a of the effective value converter 48 of the embodiment.
- FIG. 17 is a graph showing changes in the amount of change 270 in the output 56a of the comparative example and the amount of change 268 in the output 48a of this embodiment with respect to the pressure applied to the semiconductor wafer 18.
- FIG. 18 shows an example of settings for the amplification unit 40, the offset unit 42, the filter 44, and the second amplification unit 46.
- FIG. 19 is a flowchart illustrating an example of control of each unit by the control unit 50.
- polishing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
- the basic configuration of the polishing apparatus will be described, and then the detection of the polishing end point of the object to be polished will be described.
- FIG. 1 is a diagram showing a basic configuration of a polishing apparatus according to the present embodiment.
- the polishing apparatus detects a rotation position of a polishing table 12 on which the polishing pad 10 can be mounted on the upper surface, a first electric motor (first driving unit) 14 that rotates the polishing table 12, and a first electric motor.
- a position detection sensor 16 a top ring 20 that can hold the semiconductor wafer 18, and a second electric motor 22 that rotates the top ring 20.
- the top ring 20 can be moved closer to or away from the polishing table 12 by a holding device (not shown). When polishing the semiconductor wafer 18, the top ring 20 is brought close to the polishing table 12 so that the semiconductor wafer 18 held on the top ring 20 is brought into contact with the polishing pad 10 attached to the polishing table 12.
- the semiconductor wafer 18 held on the top ring 20 is pressed against the polishing pad 10 while the polishing table 12 is driven to rotate. Further, the top ring 20 is driven to rotate around an axis line 21 that is eccentric from the rotating shaft 13 of the polishing table 12 by a second electric motor 22.
- a polishing abrasive liquid containing an abrasive is supplied from the abrasive supply device 24 to the upper surface of the polishing pad 10.
- the semiconductor wafer 18 set on the top ring 20 is pressed against the polishing pad 10 supplied with the polishing abrasive liquid while the top ring 20 is rotationally driven by the second electric motor 22.
- the first electric motor 14 is a synchronous or induction type AC servo motor having at least three windings of U phase, V phase and W phase.
- the first electric motor 14 includes an AC servo motor having three-phase windings.
- the three-phase windings cause currents that are 120 degrees out of phase to flow through the field windings provided around the rotor in the first electric motor 14, thereby rotating the rotor. .
- the rotor of the first electric motor 14 is connected to a motor shaft 15, and the polishing table 12 is rotationally driven by the motor shaft 15.
- the second electric motor 22 is preferably a synchronous or induction type AC servo motor having at least a three-phase winding of U phase, V phase and W phase.
- the second electric motor 22 includes an AC servo motor having three-phase windings.
- the three-phase windings cause currents that are 120 degrees out of phase to flow in the field windings provided around the rotor in the second electric motor 22 so that the rotor is rotationally driven. .
- the rotor of the second electric motor 22 is connected to the motor shaft 23, and the top ring 20 is rotationally driven by the motor shaft 23.
- the polishing apparatus includes a motor driver 100 that rotationally drives the first electric motor 14 and an input unit 200 that receives a rotation speed command signal of the first electric motor 14 from an operator via an input interface such as a keyboard or a touch panel. And comprising.
- the input unit 200 inputs the received command signal to the motor driver 100.
- 1 illustrates the motor driver 100 that rotationally drives the first electric motor 14, the same motor driver 100 is also connected to the second electric motor 22 as shown in FIG. 4.
- the motor driver 100 includes a differentiator 102, a speed compensator 104, a two-phase / three-phase converter 106, an electrical angle signal generator 108, a U-phase current compensator 110, a U-phase PWM modulation circuit 112, A V-phase current compensator 114, a V-phase PWM modulation circuit 116, a W-phase current compensator 118, a W-phase PWM modulation circuit 120, a power amplifier 130, and current sensors 132 and 134 are provided.
- the differentiator 102 generates an actual speed signal corresponding to the actual rotational speed of the first electric motor 14 by differentiating the rotational position signal detected by the position detection sensor 16. That is, the differentiator 102 is an arithmetic unit that obtains the rotational speed of the first electric motor 14 based on the detected value of the rotational position of the first electric motor 14.
- the speed compensator 104 is based on a speed deviation signal corresponding to the deviation between the rotational speed command signal (target value) input via the input unit 200 and the actual speed signal generated by the differentiator 102.
- the rotational speed of the electric motor 14 is compensated. That is, the speed compensator 104 receives the rotation speed command value of the first electric motor 14 input via the input interface (input unit 200) and the rotation speed of the first electric motor 14 obtained by the differentiator 102. Based on the deviation, a command signal for the current to be supplied to the first electric motor 14 is generated.
- the speed compensator 104 can be composed of, for example, a PID controller.
- the speed compensator 104 performs proportional control, integral control, and differential control, and generates a current command signal corresponding to the compensated rotation speed.
- the proportional control changes the operation amount in proportion to the deviation between the rotational speed command signal input from the input unit 200 and the actual speed signal of the first electric motor.
- the integral control adds the deviation and changes the operation amount in proportion to the value.
- the change rate of the deviation that is, the speed at which the deviation changes
- the speed compensator 104 can also be configured by a PI controller.
- the electrical angle signal generator 108 generates an electrical angle signal based on the rotational position signal detected by the position detection sensor 16.
- the two-phase to three-phase converter 106 is based on the current command signal generated by the speed compensator 104 and the electrical angle signal generated by the electrical angle signal generator 108, and the V-phase current command signal and the V-phase A current command signal is generated. That is, the two-phase to three-phase converter 106 is based on the electrical angle signal generated based on the detected value of the rotational position of the first electric motor 14 and the current command signal generated by the speed compensator 104. , A converter that generates current command values for at least two of the phases.
- FIG. 2 is a diagram for explaining the processing contents of the two-phase to three-phase converter.
- a current command signal Ic as shown in FIG. 2 is input from the speed compensator 104 to the two-phase / three-phase converter 106.
- the U-phase electrical angle signal Sin ⁇ u as shown in FIG. 2 is input to the 2-phase-3 phase converter 106 from the electrical angle signal generator 108.
- the V-phase electrical angle signal Sin ⁇ v is also input to the two-phase / three-phase converter 106.
- the two-phase to three-phase converter 106 multiplies the current command signal Ic (i) at a certain time ti by the V-phase electrical angle signal Sin ⁇ v (i).
- the current sensor 132 is provided on the U-phase output line of the power amplifier 130 and detects the U-phase current output from the power amplifier 130.
- the U-phase current compensator 110 corresponds to a deviation between the U-phase current command signal Iuc output from the two-phase / three-phase converter 106 and the U-phase detection current Iu * detected by the current sensor 132 and fed back. Based on the U-phase current deviation signal, U-phase current compensation is performed.
- the U-phase current compensator 110 can be constituted by, for example, a PI controller or a PID controller.
- the U-phase current compensator 110 performs U-phase current compensation using PI control or PID control, and generates a U-phase current signal corresponding to the compensated current.
- the U phase PWM modulation circuit 112 performs pulse width modulation based on the U phase current signal generated by the U phase current compensator 110.
- the U-phase PWM modulation circuit 112 generates two systems of pulse signals corresponding to the U-phase current signal by performing pulse width modulation.
- the current sensor 134 is provided on the V-phase output line of the power amplifier 130 and detects the V-phase current output from the power amplifier 130.
- the V-phase current compensator 114 corresponds to a deviation between the V-phase current command signal Ivc output from the two-phase / three-phase converter 106 and the V-phase detection current Iv * detected by the current sensor 134 and fed back. V-phase current compensation is performed based on the V-phase current deviation signal.
- the V-phase current compensator 114 can be constituted by, for example, a PI controller or a PID controller.
- the V-phase current compensator 114 compensates for the V-phase current using PI control or PID control, and generates a V-phase current signal corresponding to the compensated current.
- the V-phase PWM modulation circuit 116 performs pulse width modulation based on the V-phase current signal generated by the V-phase current compensator 114.
- the V-phase PWM modulation circuit 114 generates two systems of pulse signals corresponding to the V-phase current signal by performing pulse width modulation.
- the W-phase current compensator 118 includes a W-phase current command signal Iwc generated based on the U-phase current command signal Iuc and the V-phase current command signal Ivc output from the two-phase / three-phase converter 106, and a current sensor 132. , 134, and W phase current compensation is performed based on a W phase current deviation signal corresponding to a deviation between the U phase detection current Iu * and the V phase detection current Iv * fed back.
- the W-phase current compensator 118 can be constituted by, for example, a PI controller or a PID controller.
- the W-phase current compensator 118 performs compensation of the W-phase current using PI control or PID control, and generates a W-phase current signal corresponding to the compensated current.
- the W-phase PWM modulation circuit 120 performs pulse width modulation based on the W-phase current signal generated by the W-phase current compensator 118.
- the W-phase PWM modulation circuit 118 generates two systems of pulse signals corresponding to the W-phase current signal by performing pulse width modulation.
- the power amplifier 130 drives each transistor of the inverter unit built in the power amplifier 130 according to each applied pulse signal. Thereby, the power amplifier 130 outputs AC power for each of the U phase, the V phase, and the W phase, and rotationally drives the first electric motor 14 with the three-phase AC power.
- FIG. 3 is a diagram schematically illustrating a configuration related to drive current adjustment of the polishing apparatus according to the first embodiment.
- FIG. 4 is a diagram schematically showing a configuration relating to drive current adjustment of the polishing apparatus according to the second embodiment.
- the first embodiment is an embodiment that performs drive current adjustment in the motor driver 100 that drives the first electric motor 14, whereas the second embodiment drives the second electric motor 22. The difference lies in the embodiment for adjusting the drive current in the motor driver 100.
- the same parts in the first embodiment and the second embodiment will be described together.
- the polishing apparatus has a second current sensor (current) in any one of the U phase, V phase, and W phase (V phase in the first and second embodiments).
- Detection unit) 31 is provided.
- the second current sensor 31 is connected to a V-phase current path between the motor driver 100 and the first electric motor 14 or a V-phase current path between the motor driver 100 and the second electric motor 22.
- the second current sensor 31 detects the V-phase current and outputs it to the end point detection device 60.
- the end point detection device 60 detects the polishing end point of the semiconductor wafer 18.
- the end point detection device 60 and the motor driver 100 can transmit and receive commands by, for example, serial communication.
- the end point detection device 60 includes a determination unit 62, an adjustment unit 64, a storage unit 66, and an end point detection unit 68.
- the determination unit 62 determines whether or not the polishing condition of the polishing process to be executed matches a specific polishing condition set in advance.
- the polishing conditions include, for example, at least one of the type of an object to be polished, the type of polishing recipe, the type of polishing pad, and the type of polishing abrasive liquid (slurry).
- the determination unit 62 receives, for example, the polishing conditions of the polishing process to be executed from the input unit 200 of the polishing apparatus.
- the determination unit 62 reads the specific polishing condition stored in the storage unit 66, and compares the read specific polishing condition with the input polishing condition, so that the input polishing condition matches the specific polishing condition. It is determined whether or not to do.
- the polishing conditions are not only input via the input unit 200, but are input to the determination unit 62 by reading, for example, information indicating the contents of the polishing conditions stored in a tag attached to the semiconductor wafer 18 with a reader or the like. You can also
- the drive current detected by the second current sensor 31 during execution of the polishing process is input to the determination unit 62.
- the determination unit 62 determines whether or not to add the polishing condition of the polishing process being performed to the specific polishing condition. Specifically, the determination unit 62 determines that the change in the drive current detected by the second current sensor 31 when the drive load of the first electric motor 14 or the second electric motor 22 changes is greater than the threshold value. If it is smaller, information indicating the contents of the polishing conditions of the polishing process being executed is stored in the storage unit 66 to be added to the specific polishing conditions.
- the determination unit 62 stores information indicating the content of the polishing condition of the polishing process being executed in the storage unit 66, thereby specifying a specific polishing condition. Add to.
- the adjustment unit 64 of the first electric motor 14 or the second electric motor 22 in the motor driver 100 is determined.
- a current control parameter relating to a change in drive current with respect to a change in drive load is adjusted (changed).
- the adjustment unit 64 adjusts the current control parameter so that the change in the drive current becomes larger with respect to the change in the drive load of the first electric motor 14 or the second electric motor 22. More specifically, the current control parameter is a control gain of feedback control in the speed compensator 104 of the motor driver 100. As described above, the speed compensator 104 controls the drive current based on the deviation between the actual rotational speed of the polishing table 12 or the top ring 20 and the target rotational speed. When the determination unit 62 determines that the polishing condition of the polishing process to be executed matches the specific polishing condition, the adjustment unit 64 transmits a command for increasing the control gain in the control based on the deviation to the motor driver 100.
- FIG. 5 and 6 are diagrams schematically showing changes in drive current according to the first and second embodiments.
- FIG. 5 shows the drive current before and after adjusting the current control parameter of the motor driver 100.
- the horizontal axis shows time (t), and the vertical axis shows the drive current (A).
- FIG. 6 shows the difference in drive current before and after adjusting the current control parameter of the motor driver 100, the horizontal axis is time (t), and the vertical axis is the polishing pad 10 and the semiconductor wafer 18.
- Each drive current in a state where pressure is applied between the polishing pad 10 and the semiconductor wafer 18 when the average value of the difference ( ⁇ A) in the drive current (A) when no pressure is applied between the polishing pad 10 and the semiconductor wafer 18 is used as a reference.
- the amount of change ( ⁇ A) from the average value is shown.
- FIG. 5 shows the drive current in a state where no pressure is applied between the polishing pad 10 and the semiconductor wafer 18 (Free), a state where a pressure of 1 psi is applied, and a state where a pressure of 2 psi is applied.
- the pressure between the polishing pad 10 and the semiconductor wafer 18 correlates with the driving load of the first electric motor 14 or the second electric motor 22.
- the drive after adjusting the current control parameter is compared with the waveform 70 of the drive current before adjusting the current control parameter.
- the drive current changes greatly. For example, if the change amount of the waveform 70 when the pressure changes from 2 psi to Free is ⁇ , and the change amount of the waveform 72 when the pressure changes from 2 psi to Free is ⁇ , then ⁇ ⁇ .
- the drive current change amount 74 before adjusting the current control parameter and the current control parameter are adjusted.
- a difference of about 0.5 (A) is generated in the change of the drive current between the two.
- the pressure between the polishing pad 10 and the semiconductor wafer 18 changes from 1 psi to 2 psi
- the change 74 in the drive current before adjusting the current control parameter and the change in drive current after adjusting the current control parameter occurs in the change in the drive current between the two.
- the first and second embodiments adjust the current control parameter in the motor driver 100 when it is determined that the polishing condition of the polishing process matches the specific polishing condition.
- the change of the drive current when the drive load of the first electric motor 14 or the second electric motor 22 changes can be increased.
- the change in torque current can be satisfactorily detected without changing the existing polishing recipe, and as a result, the accuracy of polishing end point detection is improved.
- No. 68 can appropriately detect the end point based on the change of the drive current.
- the control gain of feedback control in the speed compensator 104 of the motor driver 100 has been described, but the present invention is not limited to this.
- the current control parameter of the motor driver 100 regarding the moment of inertia of the first electric motor 14 or the second electric motor 22 may be adjusted.
- the motor driver 100 is configured to reduce the moment of inertia of the first electric motor 14 or the second electric motor 22.
- the current control parameter can be adjusted. According to this, since the moment of inertia of the first electric motor 14 or the second electric motor 22 is reduced, the drive current when the driving load of the first electric motor 14 or the second electric motor 22 changes is changed. Change will be greater.
- the end point detection unit 68 can appropriately perform the end point detection based on the change in the drive current.
- the adjustment unit 64 can also adjust the current control parameter in a part of the plurality of steps.
- the polishing process includes a first step of polishing the semiconductor wafer 18 at a first polishing rate, and a second step of polishing the semiconductor wafer 18 at a second polishing rate smaller than the first polishing rate after the first step.
- a process including a process is considered.
- the semiconductor wafer 18 is polished at a high polishing rate in the first step, and then the process proceeds to the second step when a predetermined time elapses, and the low polishing rate in the second step. The end point is detected while the semiconductor wafer 18 is being polished.
- the adjustment unit 64 adjusts the current control parameter (for example, control gain) of the motor driver 100 in the second step.
- the end point detection unit 68 detects the polishing end point of the semiconductor wafer 18 based on the drive current (torque current) detected by the second current sensor 31. Specifically, the end point detector 68 determines the polishing end point of the semiconductor wafer 18 based on the change in the drive current detected by the second current sensor 31.
- FIG. 7 is a diagram illustrating an example of a manner of detecting the end point of polishing.
- the horizontal axis indicates the elapsed polishing time
- the vertical axis indicates the drive current (I) and the differential value ( ⁇ I / ⁇ t) of the drive current.
- the end point detection unit 68 finishes polishing the semiconductor wafer 18 when the driving current 30a becomes smaller than a preset threshold 30b. Can be determined.
- the end point detection unit 68 obtains the differential value 30c of the drive current 30a as shown in FIG. 7, and the slope of the differential value 30c is negative to positive in the period between the preset time threshold values 30d and 30e. If it is detected that the semiconductor wafer 18 has been turned to, it can be determined that the polishing of the semiconductor wafer 18 has reached the end point. That is, the time threshold values 30d and 30e are set to an approximate period that is considered to be the polishing end point based on an empirical rule, and the end point detection unit 68 performs polishing in the period between the time threshold values 30d and 30e. Perform end point detection.
- the end point detection unit 68 reaches the end point in the polishing of the semiconductor wafer 18 except for the period between the time threshold values 30d and 30e even if the slope of the differential value 30c changes from negative to positive. Not determined. For example, immediately after the start of polishing, when the differential value 30c hunts due to the effect of unstable polishing and the slope changes from negative to positive, it is prevented from being erroneously detected as the polishing end point. Because. The end point detection unit 68 can also determine that the polishing of the semiconductor wafer 18 has reached the end point when the amount of change in the drive current 30a changes more than a preset threshold value. Hereinafter, a specific example of the determination of the polishing end point of the end point detection unit 68 will be shown.
- the semiconductor wafer 18 is laminated with different materials such as a semiconductor, a conductor, and an insulator.
- the motor torque of the first electric motor 14 or the second electric motor 22 is changed when the polishing is shifted to the different material layer.
- the V-phase motor current detection current signal
- the end point detection unit 68 determines the end point of polishing of the semiconductor wafer 18 by detecting that the motor current has become larger or smaller than the threshold value.
- the end point detector 68 can also determine the polishing end point of the semiconductor wafer 18 based on the change in the differential value of the motor current.
- the polishing surface is flattened by polishing from a state where the polishing surface of the semiconductor wafer 18 is not flat, for example.
- the motor torque of the first electric motor 14 or the second electric motor 22 changes.
- the V-phase motor current also changes.
- the end point detection unit 68 determines the polishing end point of the semiconductor wafer 18 by detecting that the motor current has become smaller than the threshold value.
- the end point detector 68 can also determine the polishing end point of the semiconductor wafer 18 based on the change in the differential value of the motor current.
- FIG. 8 is a flowchart of the current adjustment method by the polishing apparatus of the first and second embodiments.
- FIG. 8 is a flowchart of the current adjustment method when the polishing process has a single step.
- a polishing recipe for a polishing process is set (step S101). Subsequently, in the current adjustment method, it is determined whether or not the polishing conditions (for example, a combination of the type of the semiconductor wafer 18 and the type of the polishing recipe) of the polishing process to be executed coincide with the specific polishing conditions (step S102). .
- the determination unit 62 can determine based on specific polishing conditions stored in the storage unit 66.
- the adjustment unit 64 adjusts the current control parameter of the motor driver 100 (step S103).
- the current adjustment method starts polishing the semiconductor wafer 18 (step S104). Subsequently, in the current adjustment method, the end point detection unit 68 performs end point detection (step S105).
- the determination unit 62 determines whether or not the end point detection has been normally performed by the end point detection unit 68 (step S106). For example, if the end point is not detected even after a predetermined time has elapsed, the determination unit 62 determines that the end point has not been detected normally.
- step S106 If the determination unit 62 determines that the end point detection has been normally performed by the end point detection unit 68 (step S106, Yes), the process ends.
- the polishing condition of the polishing process being performed is set as the specific polishing condition, for example, a storage unit 66 (step S107), and the process ends. That is, the polishing conditions in this polishing process are registered as current control parameter adjustment targets. Therefore, the current control parameter is adjusted when the polishing process is executed under this polishing condition after the next time. For example, even if the current control parameter is adjusted in step S103, the end point detection may not be performed normally if the adjustment is insufficient. In this case, the current control parameter is adjusted larger than the previous adjustment when the polishing process is executed next time under the polishing conditions. For example, the increase amount of the control gain of the feedback control in the speed compensator 104 is made larger than the increase amount in the previous adjustment.
- FIG. 9 is a flowchart of the current adjustment method by the polishing apparatus of the first and second embodiments.
- FIG. 9 is a flowchart of the current adjustment method when the polishing process has a plurality of steps.
- FIG. 9 shows, as an example, a first process in which a polishing process polishes the semiconductor wafer 18 at a first polishing rate, and a semiconductor wafer at a second polishing rate smaller than the first polishing rate after the first process. And a second step of polishing 18.
- the polishing process including a plurality of steps is not limited to this example and can be arbitrarily selected.
- the step of adjusting the current control parameter is not limited to this example, and can be arbitrarily selected.
- a polishing recipe for a polishing process including a plurality of steps is set (step S201). Subsequently, the current adjustment method starts polishing of the semiconductor wafer 18 at the first polishing rate (step S202). Subsequently, the current adjustment method determines whether or not a preset time has elapsed (step S203). When it is determined that the preset time has not elapsed (No in step S203), the current adjustment method returns to step S202.
- the polishing conditions in the second step for example, a combination of the type of the semiconductor wafer 18 and the type of the polishing recipe. Is determined to match the specific polishing condition (step S204). For example, this determination may be performed by a worker of the polishing apparatus, or the determination unit 62 may determine based on specific polishing conditions stored in the storage unit 66.
- the adjustment unit 64 adjusts the current control parameter of the motor driver 100 (Step S205).
- the current adjustment method starts polishing of the semiconductor wafer 18 at the second polishing rate (step S206).
- the end point detection unit 68 performs end point detection (step S207).
- the determination unit 62 determines whether or not the end point detection has been normally performed by the end point detection unit 68 (step S208). For example, if the end point is not detected even after a predetermined time has elapsed, the determination unit 62 determines that the end point has not been detected normally.
- step S208, Yes If the determination unit 62 determines that the end point detection has been normally performed by the end point detection unit 68 (step S208, Yes), the process ends.
- the polishing condition of the second step of the polishing process being executed is set to the specific polishing condition. For example, it stores in the memory
- the current control parameter is adjusted only under specific polishing conditions. Therefore, in the case of a polishing condition in which end point detection can be performed by setting a normal current control parameter, the current control parameter is not adjusted, so that the existing polishing recipe or the like is not affected. Further, according to the polishing apparatus and the current adjustment method of the first and second embodiments, the current control parameter in the motor driver 100 is adjusted when it is determined that the polishing condition of the polishing process matches the specific polishing condition. As a result, it is possible to increase the change in the drive current when the drive load of the first electric motor 14 or the second electric motor 22 changes.
- the polishing apparatus and the current adjustment method of the first and second embodiments it is possible to detect a change in torque current satisfactorily without changing the existing polishing recipe.
- the end point detection unit 68 can appropriately detect the end point based on the change of the drive current.
- FIG. 10 is a diagram showing a basic configuration of the polishing apparatus 100a according to the present embodiment.
- the polishing apparatus 100a includes a polishing table 12 on which a polishing pad 10 can be attached to the upper surface, a first electric motor 14 that rotationally drives the polishing table 12, and a top ring (holding) that can hold a semiconductor wafer (polishing object) 18. Part) 20 and a second electric motor 22 that rotationally drives the top ring 20.
- This embodiment can be applied to a two-phase motor, a five-phase motor, etc. other than the three-phase motor. Further, the present invention can be applied to, for example, a DC brushless type motor other than the AC servo motor.
- the polishing apparatus 100 a includes a motor driver 16 that rotationally drives the first electric motor 14.
- FIG. 10 illustrates only the motor driver 16 that rotationally drives the first electric motor 14, but a similar motor driver is also connected to the second electric motor 22.
- the motor driver 16 outputs an alternating current for each of the U phase, the V phase, and the W phase, and rotationally drives the first electric motor 14 by the three-phase alternating current.
- the polishing apparatus 100a rectifies the three-phase current detection value detected by the current detection unit 24 and the current detection unit 24 that detects the three-phase alternating current output from the motor driver 16, and outputs the rectified three-phase signal.
- a rectification calculation unit 28 that adds and outputs, and an end point detection unit 29 that detects a polishing end point indicating completion of polishing of the surface of the semiconductor wafer 18 based on a change in the output of the rectification calculation unit 28.
- the rectification calculation unit 28 of the present embodiment performs only the process of adding the three-phase signals, but may perform multiplication after the addition. Further, only multiplication may be performed.
- the current detection unit 24 includes current sensors 31a, 31b, and 31c in each of the U phase, the V phase, and the W phase in order to detect the three-phase alternating current output from the motor driver 16.
- the current sensors 31a, 31b, and 31c are provided in U-phase, V-phase, and W-phase current paths between the motor driver 16 and the first electric motor 14, respectively.
- the current sensors 31a, 31b, and 31c detect U-phase, V-phase, and W-phase currents, respectively, and output them to the rectification calculation unit 28.
- the current sensors 31a, 31b, and 31c may be provided in U-phase, V-phase, and W-phase current paths between a motor driver (not shown) and the second electric motor 22.
- the current sensors 31a, 31b, and 31c are Hall element sensors in the present embodiment.
- Each Hall element sensor is provided in each of U-phase, V-phase, and W-phase current paths, and a magnetic flux proportional to each current of U-phase, V-phase, and W-phase is converted into Hall voltages 32a, 32b, and 32c by the Hall effect. Convert and output.
- Current sensors 31a, 31b, and 31c may be of other methods that can measure current.
- a current transformer method may be used in which current is detected by a secondary winding wound around a ring-shaped core (primary winding) provided in each of U-phase, V-phase, and W-phase current paths.
- the output current can be detected as a voltage signal by flowing the load resistance.
- the rectification calculation unit 28 rectifies the outputs of the plurality of current sensors 31a, 31b, 31c and adds the rectified signals.
- the end point detection unit 29 includes a processing unit 230 that processes the output of the rectification calculation unit 28, an effective value converter 48 that converts an effective value of the output of the processing unit 230, and a control unit 50 that determines a polishing end point.
- FIGS. 11 is a block diagram showing details of the rectification calculation unit 28 and the end point detection unit 29.
- FIGS. 12 and 4 are graphs showing the contents of signal processing by the rectification calculation unit 28 and the end point detection unit 29.
- the rectification calculating unit 28 adds the output voltages 32a, 32b, and 32c of the plurality of current sensors 31a, 31b, and 31c and rectifies them, and adds the rectified signals 36a, 36b, and 36c. And an arithmetic unit 38. Since the current value is increased by the addition, the detection accuracy is improved.
- the same reference numerals are assigned to the signal lines and the signals flowing through the signal lines.
- the output voltages 32a, 32b, and 32c to be added are for three phases in this embodiment, but the present invention is not limited to this.
- two phases may be added.
- the three-phase or two-phase components of the first electric motor 22 may be added and used to detect the end point.
- one or more phases of the first electric motor 14 and one or more phases of the second electric motor 22 may be added.
- FIG. 12A shows output voltages 32a, 32b, and 32c of the current sensors 31a, 31b, and 31c.
- FIG. 12B shows voltage signals 36a, 36b, and 36c that are rectified and output by the rectifiers 34a, 34b, and 34c, respectively.
- FIG. 12C shows the signal 38a that is added and output by the arithmetic unit 38. The horizontal axis of these graphs is time, and the vertical axis is voltage.
- the processing unit 230 is included in the amplification unit 40 that amplifies the output 38 a of the rectification calculation unit 28, the offset unit (subtraction unit) 42 that subtracts a predetermined amount from the output of the rectification calculation unit 28, and the output 38 a of the rectification calculation unit 28.
- a filter (noise removal unit) 44 that removes generated noise
- a second amplification unit 46 that further amplifies the signal from which noise has been removed by the noise removal unit.
- the signal 40a amplified by the amplification unit 40 is subtracted by the offset unit 44, and noise is removed by the filter 44 from the subtracted signal 42a.
- FIG. 12 (d) shows the signal 40a amplified and output by the amplifying unit 40.
- FIG. 13A shows the signal 42a output by the offset unit 42 after subtracting from the signal 40a.
- FIG. 13B shows the signal 44a output by the filter 44 after removing noise included in the signal 42a.
- FIG. 13C shows the signal 46a output by the second amplifier 46 after further amplifying the signal 44a from which noise has been removed.
- the horizontal axis of these graphs is time, and the vertical axis is voltage.
- the amplifying unit 40 controls the amplitude of the output 38a of the rectification calculating unit 28, and amplifies it with a predetermined amount of amplification factor to increase the amplitude.
- the offset unit 42 extracts and processes a current portion depending on the change in the friction force by removing a constant amount of current portion (bias) that does not change even when the friction force changes. Thereby, the accuracy of the end point detection method for detecting the end point from the change of the frictional force is improved.
- the offset unit 42 performs subtraction by the amount to be deleted from the signal 40a output from the amplification unit 40.
- the detected current usually includes a current portion that changes as the friction force changes, and a constant amount of current portion (bias) that does not change when the friction force changes. This bias is the amount to be removed. By removing the bias, it is possible to extract only the current portion depending on the change of the frictional force and amplify it to the maximum amplitude in accordance with the input range of the effective value converter 48 in the subsequent stage. Improves accuracy.
- the filter 44 reduces unnecessary noise included in the input signal 42a, and is usually a low-pass filter.
- the filter 44 is, for example, a filter that passes only frequency components lower than the rotational speed of the motor. This is because the end point can be detected if there is only a DC component in the end point detection.
- a band-pass filter that passes a frequency component lower than the rotational speed of the motor may be used. This is because the end point can also be detected in this case.
- the second amplifying unit 46 is for adjusting the amplitude in accordance with the input range of the effective value converter 48 in the subsequent stage.
- the reason for matching with the input range of the effective value converter 48 is that the input range of the effective value converter 48 is not infinite and it is desirable that the amplitude is as large as possible. Note that when the input range of the effective value converter 48 is increased, the resolution at the time of analog / digital conversion of the converted signal by the A / D converter deteriorates. For these reasons, the input range to the effective value converter 48 is kept optimal by the second amplifier 46.
- the output 46 a of the second amplifying unit 46 is input to the effective value converter 48.
- the effective value converter 48 obtains an average of the AC voltage in one cycle, that is, a DC voltage equal to the AC voltage.
- the output 48a of the effective value converter 48 is shown in FIG.
- the horizontal axis of this graph is time, and the vertical axis is voltage.
- the output 48 a of the effective value converter 48 is input to the control unit 50.
- the control unit 50 performs end point detection based on the output 48a.
- the controller 50 determines that the polishing of the semiconductor wafer 18 has reached the end point when a preset condition is satisfied, such as when any of the following conditions is satisfied. That is, when the output 48a becomes larger than a preset threshold value, when the output 48a becomes smaller than a preset threshold value, or when the time differential value of the output 48a satisfies a predetermined condition. Then, it is determined that the polishing of the semiconductor wafer 18 has reached the end point.
- FIG. 14 is a block diagram and a graph showing an end point detection method of a comparative example. Since the graph shown in FIG. 14 is intended to show the principle of the detection method, the signal shown shows a signal in the absence of noise. The horizontal axis of these graphs is time, and the vertical axis is voltage. In the comparative example, since only one-phase current is used, there is no addition process. Also, no subtraction process is performed. 11 and 14, the Hall element sensor 31a and the Hall element sensor 52, the rectification unit 34a and the rectification unit 54, the effective value converter 48, and the effective value converter 56 are assumed to have the same performance.
- FIG. 14A shows the Hall voltage 52a.
- the output voltage 52a of the hall element sensor 52 is input, and the rectifier 54 rectifies and outputs it as a signal 54a.
- the rectification is half-wave rectification or full-wave rectification.
- the signal 54a when half-wave rectified is shown in FIG. 14 (c), and the signal 54a when full-wave rectified is shown in FIG. 14 (d).
- the output 54 a is input to the effective value converter 56.
- the effective value converter 56 obtains an average of one period of the AC voltage.
- the output 56a of the effective value converter 56 is shown in FIG.
- the output 56 a of the effective value converter 56 is input to the end point detector 58.
- the end point detection unit 58 performs end point detection based on the output 56a.
- FIG. 15 shows a comparison between the processing result of the comparative example and the processing result of the present example.
- FIG. 15A is a graph showing the output 56a of the effective value converter 56 of the comparative example
- FIG. 15B is a graph showing the output 48a of the effective value converter 48 of the present embodiment.
- the horizontal axis of the graph represents time, and the vertical axis represents the output voltage of the RMS converter converted to the corresponding drive current. From FIG. 15, it can be seen that the current change is increased by this embodiment.
- a range HT in FIG. 15 indicates an input possible range of the effective value converters 48 and 56.
- the level 260a of the comparative example corresponds to the level 262a of the present example
- the level 260b of the comparative example corresponds to the level 262b of the present example.
- the change range WD1 of the drive current 48a is considerably larger than the change range WD of the comparative example. In this embodiment, even when the change in the torque current is small, the change in the torque current is detected well, and the accuracy of the polishing end point detection is improved.
- FIG. 16 shows another graph comparing the results of the processing of the comparative example and the present example.
- FIG. 16 is a graph showing the output 56a of the effective value converter 56 of the comparative example and the output 48a of the effective value converter 48 of the present embodiment.
- the horizontal axis of the graph represents time, and the vertical axis represents the output voltage of the RMS converter converted to the corresponding drive current. This figure differs from FIG. 15 in the object to be polished.
- FIG. 16 shows how the output voltage of the effective value converter changes from the polishing start time t1 to the polishing end time t3.
- the change amount of the output 48a of the effective value converter 48 of the present embodiment is larger than the change amount of the output 56a of the effective value converter 56 of the comparative example.
- the outputs 48a and 56a both take the lowest values 264a and 266a at time t1, and both take the highest values 264b and 266b at time t2.
- the peak values 272a and 272b indicate current values larger than the maximum values 264b and 266b, but the peak values 272a and 272b are noises generated at an initial stage until the polishing is stabilized.
- FIG. 16 is a graph showing changes in the amount of change 270 in the output 56a of the comparative example and the amount of change 268 in the output 48a of this embodiment with respect to the pressure applied to the semiconductor wafer 18.
- the horizontal axis of the graph shows the pressure applied to the semiconductor wafer 18, and the vertical axis shows the output voltage of the RMS converter converted to the corresponding drive current.
- a curve 274 is a plot of the amount of change 268 of the output 48a of this embodiment against the pressure.
- a curve 276 is a plot of the amount of change 270 of the output 56a of the comparative example against the pressure.
- the pressure is 0, that is, when polishing is not performed, the current is 0.
- the change amount 268 of the output 48a of the effective value converter 48 of the present embodiment is larger than the change amount 270 of the output 56a of the effective value converter 56 of the comparative example, and the curves 274 and 276 The difference becomes more prominent as the pressure increases.
- the control unit 50 includes an amplification characteristic (amplification factor, frequency characteristic, etc.) of the amplification unit 40, a noise removal characteristic (signal pass band, attenuation amount, etc.) of the filter 44, and a subtraction characteristic (subtraction amount, frequency characteristic, etc.) of the offset unit 42. ) And the amplification characteristic (amplification factor, frequency characteristic, etc.) of the second amplification unit 46 are controlled.
- amplification characteristic amplification factor, frequency characteristic, etc.
- the specific control method is as follows.
- the control unit 50 transmits data indicating an instruction to change the circuit characteristics by digital communication (USB (Universal Serial Bus) (Universal Serial Bus), LAN (Local Area). Network (local area network)), RS-232, etc.).
- USB Universal Serial Bus
- LAN Local Area
- Network local area network
- RS-232 RS-232
- Each unit that receives the data changes the settings related to the characteristics according to the data.
- the changing method changes the setting of the resistance value of the resistor, the capacitance value of the capacitor, the inductance of the inductor, and the like that constitute the analog circuit of each part.
- resistance etc. are switched by analog SW.
- the setting is changed by switching a plurality of resistors or the like or rotating a variable resistor or the like by a small motor by the analog signal.
- a method of providing a plurality of circuits in advance and switching the plurality of circuits is also possible.
- the content of data to be transmitted can be various.
- each unit that transmits a number selects a resistance corresponding to the number according to the received number, or transmits a value corresponding to the resistance value or the magnitude of the inductance, and matches the value.
- FIG. 18 shows an example of settings for the amplification unit 40, the offset unit 42, the filter 44, and the second amplification unit 46.
- the input range of the effective value converter 48 is from 0 A (ampere) to 100 A, that is, 100 A.
- the maximum value 278b of the waveform of the output signal 38a is 200A
- the minimum value 278c is 100A.
- the amount of subtraction in the offset unit 42 is 10A, which is the lower limit value of the signal 38a, is amplified by the amplifying unit 40 and becomes 100A. Therefore, 100A is subtracted. Accordingly, the set value 278d of the subtraction amount in the offset unit 42 is ⁇ 100A. As a result of the subtraction, the maximum value 278e of the waveform of the output signal 38a is 100A, and the minimum value 278f is 0A.
- the filter 44 since the filter 44 is not changed from the initial setting, the setting value 278g is blank.
- the maximum value 278h of the waveform of the output signal 38a is attenuated to a value lower than 100A according to the filter characteristics, and the minimum value 278i of the waveform of the output signal 38a is 0A.
- the purpose of the second amplifying unit 46 is to correct the amount attenuated by the filter 44.
- the amplification factor set value 278j of the second amplifying unit 46 is set to a value that can correct the amount attenuated by the filter 44.
- the maximum value 278k of the waveform of the output signal 38a is 100A
- the minimum value 278l is 0A.
- FIG. 19 is a flowchart illustrating an example of control of each unit by the control unit 50.
- the control unit 50 provides information on the polishing recipe (which defines polishing conditions for the substrate surface such as pressure distribution and polishing time) to the operator of the polishing apparatus 100a or management of the polishing apparatus 100a (not shown). Input from the device (step 10).
- the reason for using the polishing recipe is as follows.
- a surface state such as a film thickness of each substrate surface is measured before polishing, between polishing processes at each stage, or after polishing. This is because the value obtained by the measurement is fed back to optimally correct (update) the next substrate and the polishing recipe after the arbitrary number of sheets.
- the contents of the polishing recipe are as follows.
- the control unit 50 sends the polishing table 12 and the top ring 20 from the management device of the polishing apparatus 100a (not shown). And the pressure by the top ring 20 are received (step 12).
- the reason for receiving this information is that ripples may occur due to the effect of pressure, table rotation speed, table rotation speed and top ring rotation speed ratio, and it is necessary to set the filter according to the ripple frequency. It is.
- the control unit 50 performs the amplification unit 40, the offset unit 42, the filter 44, and the second amplification unit 46 according to the polishing recipe and the information received in step 12. Determine the set value.
- the determined set value is transmitted to each unit by digital communication (step 14).
- the communication setting is invalid, default setting values are set in the amplification unit 40, the offset unit 42, the filter 44, and the second amplification unit 46.
- polishing is started.
- the control unit 50 receives a signal from the effective value converter 48 and continues to determine the polishing end point (step 16).
- control unit 50 determines the polishing end point based on the signal from the effective value converter 48, the control unit 50 transmits that the polishing end point has been detected to a management device of the polishing apparatus 100a (not shown).
- the management device ends the polishing (step 18).
- default setting values are set in the amplification unit 40, the offset unit 42, the filter 44, and the second amplification unit 46.
- the three-phase data is rectified and added, and further, waveform amplification is performed. Therefore, there is an effect that an output difference of current accompanying a torque change is increased. Further, since the characteristics of the amplifying unit and the like can be changed, the output difference can be further increased. Noise is reduced because a filter is used.
- Polishing pad 12 Polishing table 14 1st electric motor (drive part) 18 Semiconductor wafer (object to be polished) 20 Top ring (holding part) 22 2nd electric motor (drive part) 31 Current sensor (current detector) 60 end point detection device 62 determination unit 64 adjustment unit 66 storage unit 68 end point detection unit 100 motor driver 104 speed compensator 200 input unit
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Abstract
Description
図1は、本実施形態に係る研磨装置の基本構成を示す図である。研磨装置は、研磨パッド10を上面に取付け可能な研磨テーブル12と、研磨テーブル12を回転駆動する第1の電動モータ(第1の駆動部)14と、第1の電動モータの回転位置を検出する位置検出センサ16と、半導体ウエハ18を保持可能なトップリング(保持部)20と、トップリング20を回転駆動する第2の電動モータ(第2の駆動部)22と、を備えている。
次に、モータドライバ100における駆動電流の調整について説明する。図3は、第1実施形態の研磨装置の駆動電流調整に関する構成を模式的に示す図である。図4は、第2実施形態の研磨装置の駆動電流調整に関する構成を模式的に示す図である。なお、第1実施形態は、第1の電動モータ14を駆動するモータドライバ100における駆動電流調整を行う実施形態であるのに対して、第2実施形態は、第2の電動モータ22を駆動するモータドライバ100における駆動電流調整を行う実施形態である点が異なる。第1実施形態と第2実施形態で同様の部分についてはまとめて説明する。
終点検出部68は、第2の電流センサ31によって検出された駆動電流(トルク電流)に基づいて、半導体ウエハ18の研磨終点を検出する。具体的には、終点検出部68は、第2の電流センサ31によって検出された駆動電流の変化に基づいて半導体ウエハ18の研磨の終点を判定する。
次に、第1,第2実施形態の研磨装置による電流調整方法について説明する。図8は、第1,第2実施形態の研磨装置による電流調整方法のフローチャートである。図8は、研磨プロセスが単一の工程を有する場合の電流調整方法のフローチャートである。
12 研磨テーブル
14 第1の電動モータ(駆動部)
18 半導体ウエハ(研磨対象物)
20 トップリング(保持部)
22 第2の電動モータ(駆動部)
31 電流センサ(電流検出部)
60 終点検出装置
62 判定部
64 調整部
66 記憶部
68 終点検出部
100 モータドライバ
104 速度補償器
200 入力部
Claims (29)
- 研磨パッドを保持するための研磨テーブル、又は、研磨対象物を保持して研磨パッドへ押圧するための保持部、を回転駆動するための駆動部へ供給する駆動電流に基づく終点検出方法であって、
実行する研磨プロセスの研磨条件があらかじめ設定された特定の研磨条件と一致するか否かを判定する第1判定ステップと、
前記第1判定ステップによって前記研磨条件が前記特定の研磨条件と一致すると判定された場合に、前記駆動電流を制御するための駆動制御部における、前記駆動部の駆動負荷の変化に対する前記駆動電流の変化に関する電流制御パラメータを調整する調整ステップと、
前記調整ステップによって調整された電流制御パラメータに基づいて前記駆動部へ供給される駆動電流を検出する検出ステップと、
前記検出ステップによって検出された駆動電流に基づいて研磨の終点を検出する終点検出ステップと、
を備えることを特徴とする終点検出方法。 - 請求項1の終点検出方法において、
研磨プロセスの実行中に前記検出ステップによって検出された駆動電流に基づいて、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加えるか否かを判定する第2判定ステップ、
をさらに備える終点検出方法。 - 請求項2の終点検出方法において、
前記第2判定ステップは、前記駆動部の駆動負荷が変化した際に前記検出ステップによって検出された駆動電流の変化がしきい値よりも小さい場合に、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加える、
終点検出方法。 - 請求項2の終点検出方法において、
前記終点検出ステップは、前記検出ステップによって検出された駆動電流の変化に基づいて研磨の終点を検出し、
前記第2判定ステップは、前記終点検出ステップによって研磨の終点が検出されなかった場合に、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加える、
終点検出方法。 - 請求項1~4のいずれか1項の終点検出方法において、
前記調整ステップは、前記駆動部の駆動負荷の変化に対して前記駆動電流の変化が大きくなるように、前記電流制御パラメータを調整する、
終点検出方法。 - 請求項1~5のいずれか1項の終点検出方法において、
前記駆動制御部が、前記研磨テーブル又は前記保持部の実回転速度と目標回転速度との偏差に基づいて前記駆動電流を制御する場合において、
前記調整ステップは、前記偏差に基づく制御における制御ゲインを大きくする、
終点検出方法。 - 請求項1~6のいずれか1項の終点検出方法において、
前記研磨プロセスが複数の工程を含む場合に、
前記調整ステップは、前記複数の工程のうちの一部の工程において前記電流制御パラメータを調整する、
終点検出方法。 - 請求項1~7のいずれか1項の終点検出方法において、
前記研磨条件は、研磨対象物の種類、研磨レシピの種類、研磨パッドの種類、及び研磨砥液の種類、の少なくとも1つを含む、
終点検出方法。 - 研磨パッドを保持するための研磨テーブル、又は、研磨対象物を保持して研磨パッドへ押圧するための保持部、を回転駆動するための駆動部と、
前記駆動部へ供給する駆動電流を制御するための駆動制御部と、
実行する研磨プロセスの研磨条件があらかじめ設定された特定の研磨条件と一致する場合に、前記駆動制御部における、前記駆動部の駆動負荷の変化に対する前記駆動電流の変化に関する電流制御パラメータを調整する調整部と、
を備えることを特徴とする研磨装置。 - 請求項9の研磨装置において、
実行する研磨プロセスの研磨条件があらかじめ設定された特定の研磨条件と一致するか否かを判定する判定部、をさらに備え、
前記調整部は、前記判定部によって、前記研磨プロセスの研磨条件が前記特定の研磨条件と一致すると判定された場合に、前記駆動制御部における前記電流制御パラメータを調整する、
研磨装置。 - 請求項10の研磨装置において、
研磨プロセスの実行中に前記駆動制御部から前記駆動部へ供給される駆動電流を検出する電流検出部、をさらに備え、
前記判定部は、前記電流検出部によって検出された駆動電流に基づいて、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加えるか否かを判定する、
研磨装置。 - 請求項11の研磨装置において、
前記判定部は、前記駆動部の駆動負荷が変化した際に前記電流検出部によって検出された駆動電流の変化がしきい値よりも小さい場合に、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加える、
研磨装置。 - 請求項11の研磨装置において、
前記電流検出部によって検出された駆動電流の変化に基づいて研磨の終点を検出する終点検出部をさらに備え、
前記判定部は、前記終点検出部によって研磨の終点が検出されなかった場合に、前記実行中の研磨プロセスの研磨条件を前記特定の研磨条件に加える、
研磨装置。 - 請求項9~13のいずれか1項の研磨装置において、
前記調整部は、前記駆動部の駆動負荷の変化に対して前記駆動電流の変化が大きくなるように、前記電流制御パラメータを調整する、
研磨装置。 - 請求項9~14のいずれか1項の研磨装置において、
前記駆動制御部は、前記研磨テーブル又は前記保持部の実回転速度と目標回転速度との偏差に基づいて前記駆動電流を制御し、
前記調整部は、前記偏差に基づく制御における制御ゲインを大きくする、
研磨装置。 - 請求項9~15のいずれか1項の研磨装置において、
前記研磨プロセスが複数の工程を含む場合に、
前記調整部は、前記複数の工程のうちの一部の工程において前記電流制御パラメータを調整する、
研磨装置。 - 請求項9~16のいずれか1項の研磨装置において、
前記研磨条件は、研磨対象物の種類、研磨レシピの種類、研磨パッドの種類、及び研磨砥液の種類、の少なくとも1つを含む、
研磨装置。 - 研磨対象物の表面を研磨するための研磨装置であって、
研磨パッドを保持するための研磨テーブルを回転駆動する第1の電動モータと、
前記研磨対象物を保持して前記研磨パッドへ押圧するための保持部を回転駆動する第2の電動モータとを有し、
前記第1及び第2の電動モータのうち少なくとも一方の電動モータは、複数相の巻線を備え、
前記研磨装置は、前記第1及び/又は第2の電動モータのうちの少なくとも2相の電流を検出する電流検出部と、
前記電流検出部によって検出された少なくとも2相の電流検出値を整流し、整流された信号に対して加算及び/又は乗算を行って出力する整流演算部と、
前記整流演算部の出力の変化に基づいて、前記研磨対象物の表面の研磨終了を示す研磨終点を検出する終点検出部と、
を有することを特徴とする研磨装置。 - 請求項18において、前記終点検出部は、前記整流演算部の出力を増幅する増幅部と、前記整流演算部の出力に含まれるノイズを除去するノイズ除去部と、前記整流演算部の出力から所定量を減算する減算部のうち、少なくとも1つを有する、ことを特徴とする研磨装置。
- 請求項19に記載の研磨装置において、前記終点検出部は、前記増幅部と前記減算部と前記ノイズ除去部とを有し、前記増幅部で増幅された信号を前記減算部で減算し、該減算された信号から前記ノイズ除去部でノイズを除去する、ことを特徴とする研磨装置。
- 請求項20の研磨装置において、前記終点検出部では、前記ノイズ除去部でノイズを除去された信号をさらに増幅する第2の増幅部を有する、ことを特徴とする研磨装置。
- 請求項19に記載の研磨装置において、前記終点検出部は、前記増幅部と、前記増幅部の増幅特性を制御する制御部とを有する、ことを特徴とする研磨装置。
- 請求項19に記載の研磨装置において、前記終点検出部は、前記ノイズ除去部と、前記ノイズ除去部のノイズ除去特性を制御する制御部とを有する、ことを特徴とする研磨装置。
- 請求項19に記載の研磨装置において、前記終点検出部は、前記減算部と、前記減算部の減算特性を制御する制御部とを有する、ことを特徴とする研磨装置。
- 請求項21に記載の研磨装置において、前記終点検出部は、前記第2の増幅部の増幅特性を制御する制御部を有する、ことを特徴とする研磨装置。
- 研磨パッドを保持するための研磨テーブルを回転駆動する第1の電動モータと、研磨対象物を保持して前記研磨パッドへ押圧するための保持部を回転駆動する第2の電動モータとを有し、前記第1及び第2の電動モータのうち少なくとも一方の電動モータは、複数相の巻線を有する研磨装置を用いた、前記研磨対象物の表面を研磨する研磨方法において、該方法は、
前記第1及び/又は第2の電動モータのうちの少なくとも2相の電流を検出する電流検出ステップと、
前記検出された少なくとも2相の電流検出値を整流し、整流された信号に対して加算及び/又は乗算を行って出力する整流演算ステップと、
前記整流演算ステップの出力の変化に基づいて、前記研磨対象物の表面の研磨終了を示す研磨終点を検出する終点検出ステップとを有する、ことを特徴とする研磨方法 - 請求項26の研磨方法において、前記終点検出ステップは、前記整流演算ステップの出力を増幅する増幅ステップと、前記整流演算ステップの出力に含まれるノイズを除去するノイズ除去ステップと、前記整流演算ステップの出力から所定量を減算する減算ステップのうち、少なくとも1つを有する、ことを特徴とする研磨方法
- 請求項27に記載の研磨方法において、前記終点検出ステップでは、前記増幅ステップにおいて増幅された信号に対して、前記減算ステップにおいて所定量の減算を行い、該減算された信号から前記ノイズ除去ステップにおいてノイズを除去する、ことを特徴とする研磨方法。
- 請求項28の研磨方法において、前記終点検出ステップは、前記ノイズ除去ステップでノイズを除去された信号をさらに増幅する第2の増幅ステップをさらに有する、ことを特徴とする研磨方法。
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US20190168355A1 (en) * | 2017-12-05 | 2019-06-06 | Ebara Corporation | Polishing apparatus and polishing method |
US20200346318A1 (en) * | 2014-09-02 | 2020-11-05 | Ebara Corporation | End point detection method, polishing apparatus, and polishing method |
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JP6775354B2 (ja) | 2015-10-16 | 2020-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
US10744617B2 (en) * | 2015-10-16 | 2020-08-18 | Ebara Corporation | Polishing endpoint detection method |
JP6357260B2 (ja) * | 2016-09-30 | 2018-07-11 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
JP6989317B2 (ja) * | 2017-08-04 | 2022-01-05 | キオクシア株式会社 | 研磨装置、研磨方法、およびプログラム |
JP2022066034A (ja) * | 2020-10-16 | 2022-04-28 | 新東工業株式会社 | 自動研磨システム及び自動研磨装置 |
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TWI678259B (zh) | 2019-12-01 |
CN106604802A (zh) | 2017-04-26 |
SG10201803908SA (en) | 2018-06-28 |
SG11201701152WA (en) | 2017-04-27 |
US20200346318A1 (en) | 2020-11-05 |
TW201620669A (zh) | 2016-06-16 |
CN106604802B (zh) | 2019-05-31 |
US10759019B2 (en) | 2020-09-01 |
US20170282325A1 (en) | 2017-10-05 |
KR102388170B1 (ko) | 2022-04-19 |
KR20170048397A (ko) | 2017-05-08 |
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