CN104603938A - 半导体器件 - Google Patents

半导体器件 Download PDF

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CN104603938A
CN104603938A CN201380046664.5A CN201380046664A CN104603938A CN 104603938 A CN104603938 A CN 104603938A CN 201380046664 A CN201380046664 A CN 201380046664A CN 104603938 A CN104603938 A CN 104603938A
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beam lead
igbt
arm
power module
semiconductor device
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CN104603938B (zh
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安田大基
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Marelli Corp
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Calsonic Kansei Corp
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Abstract

提供的是一种能够抑制梁式引线中的温度上升同时减少配线数量并且能够抑制制造成本的增加的半导体器件。该半导体器件设置有电源模块，该电源模块包括各自通过并联连接多个功率元件与多个整流元件而配置的上臂和下臂。到一个臂中的电流流过多个单独配线的梁式引线。一个臂中的部分功率元件和部分整流元件形成一对并通过共同的梁式引线连接。

Description

半导体器件
技术领域
本发明涉及包括电源模块的半导体器件，该电源模块具有功率元件和整流元件，其中，这些元件采用梁式引线来配线。
背景技术
专利文献1公开了诸如上述器件的传统半导体器件的已知实例。
该传统半导体器件具有通过正侧电路和负侧电路形成的配对臂结构。第一金属块被连接至多个第一半导体元件(功率元件)的背面，并且第二金属块被连接至多个第二半导体元件(整流元件)的背面。通过引线框将第一和第二半导体元件的正面与第一和第二金属块连接。第一和第二金属块形成主电流所流过的主电极的一部分。第一和第二半导体元件、第一和第二金属块、以及引线框整体被封装件覆盖。在封装件内，除了连接到第一和第二半导体元件以及第一和第二金属块的部分之外，通过引线框形成的主电极和控制电极被布置在几乎同一平面中。
现有技术文献
专利文献
专利文献1：JP 2004-22960A
发明内容
技术问题
然而，上述传统半导体器件具有如下所述的问题。
例如，如图2所示，上述传统半导体器件包括正侧输入端子P、负侧输入端子N、以及输出端子O。两个绝缘栅双极型晶体管(IGBT)和两个续流二极管(FWD)被用于上臂和下臂的每一个中。
基本上，当采用梁式引线对该双芯片并联连接的电源模块配线时使用以下两种方法。
在图3和图4中示出了用这些方法配置的半导体器件的布局。应注意，在这些附图中，实线描绘的箭头表示当IGBT运行时的电流方向，以及虚线描绘的箭头表示当FWD运行时的电流方向。
首先，如图3所示，在第一方法中，并联作为两个芯片组的IGBT各自单独通过梁式引线连接。
如在同一图中所示，在上臂中，通过独立的梁式引线103a至103d将被固定至绝缘衬底100上的正侧图案104a的IGBT 101a和101b以及二极管102a和102b单独连接至绝缘衬底100上的输出侧图案104c。
另一方面，在下臂中，通过独立的梁式引线103e至103h将被固定至输出侧图案104c的IGBT 101c和101d以及二极管102c和102d单独连接至设置在绝缘衬底100上的负侧图案104b。
正侧输入端子P连接至绝缘衬底100的一个边缘处的正侧图案104a，负侧输入端子N连接至绝缘衬底100的相同边缘处的负侧图案104b，以及输出端子O连接至绝缘衬底100的另一边缘处的输出侧图案104c。
因此，通过用独立的梁式引线为每个元件独立配线，配线和制作步骤的数量增加很多，从而导致增加制作成本的问题。
如图4所示，在第二方法中，各元件与图案之间的连接与图3中的连接相同，但配线梁式引线的方法不同。
具体地，在上臂中，IGBT 101a和101b在正侧图案104a上被组成双芯片组并通过梁式引线103i连接至输出侧图案104c。类似地，二极管102a和102b在正侧图案104a上被组成芯片组并通过梁式引线103j连接至输出侧图案104c。
另一方面，在下臂中，IGBT 101c和101d在输出侧图案104c上被组成双芯片组并通过梁式引线103k连接至负侧图案104b。类似地，二极管102c和102d在输出侧图案104c上被组成双芯片组并通过梁式引线103l连接至负侧图案104b。
然而，采用该配置，电流同时流到通过相同梁式引线连接的多个IGBT或二极管，从而由于大量电流而引起梁式引线达到很高温度的问题。
为避免该问题，梁式引线需要增厚，从而引起制造成本增加的问题。
本发明鉴于上述问题而被构思并且提供了一种具有电源模块的半导体器件，该电源模块包括各自通过将多个功率元件与多个整流元件并联连接而配置的上臂和下臂，且通过梁式引线为元件配线，因此能够抑制梁式引线中的温度上升，同时减少配线的数量，且因而能够抑制制造成本的增加。
问题的解决方案
根据如权利要求1所述的本发明第一方面的半导体器件是一种包括电源模块的半导体器件，该电源模块包括各自通过并联连接多个功率元件与多个整流元件而配置的上臂和下臂，到电源模块中的一个臂的电流流过多个单独配线的梁式引线，该一个臂中的部分功率元件和部分整流元件形成一对并通过共同的梁式引线连接。
根据如权利要求2所述的本发明第二方面的半导体器件是一种包括电源模块的半导体器件，该电源模块包括各自通过并联连接多个功率元件和数量上与该功率元件相同的多个整流元件而配置的上臂和下臂，到该电源模块中的一个臂的电流流过多个单独配线的梁式引线，该一个臂中的该功率元件的部分和数量上与该功率元件的该部分相同的该整流元件的部分形成一对并通过共同的梁式引线连接。
根据如权利要求3所述的本发明第三方面的半导体器件是一种包括电源模块的半导体器件，该电源模块包括各自通过并联连接两个功率元件芯片与两个整流元件芯片而配置的上臂和下臂，到该电源模块中的一个臂的电流流过多个单独配线的梁式引线，该一个臂中的一个该功率元件芯片和一个该整流元件芯片形成一对并通过共同的梁式引线连接。
本发明的有益效果
根据权利要求1所述的半导体器件是一种设置有电源模块的半导体器件，该电源模块包括各自通过并联连接多个功率元件与多个整流元件而配置的上臂和下臂。到电源模块中的一个臂的电流流过多个单独配线的梁式引线。一个臂中的部分功率元件和部分整流元件形成一对并通过共同的梁式引线连接。因此，不会同时接通该成对元件。
因此，可减小流过梁式引线的最大电流。
因此，能够抑制梁式引线中温度的上升，同时减小配线的数量，从而抑制制造成本的增加。
根据权利要求2所述的半导体器件是一种设置有电源模块的半导体器件，该电源模块包括各自通过并联连接多个功率元件和数量上与该功率元件相同的多个整流元件而配置的上臂和下臂，到该电源模块中的一个臂的电流流过多个单独配线的梁式引线。该一个臂中的该功率元件的部分和数量上与该功率元件的该部分相同的该整流元件的部分形成一对并通过共同的梁式引线连接。因此，不会同时接通该成对元件。
因此，可减小流过梁式引线的最大电流，并且几乎相同量的电流在每对相同数目的功率元件和整流元件中流动，从而可以防止电流在梁式引线之间变得不均匀。
因此，能够抑制梁式引线中温度的上升，同时减小配线的数量，从而抑制制造成本的增加。
根据权利要求3所述的半导体器件是一种设置有电源模块的半导体器件，该电源模块包括各自通过并联连接两个功率元件与两个整流元件而配置的上臂和下臂。到该电源模块中的一个臂的电流流过多个单独配线的梁式引线。该一个臂中的一个该功率元件和一个该整流元件形成一对并通过共同的梁式引线连接。因此，不会同时接通该成对元件。
因此，可以减小流过梁式引线的最大电流，并且可以防止电流在梁式引线之间变得不均匀。
因此，在具有上述双芯片配置的电源模块中，也能够抑制梁式引线中温度的上升，同时减小配线的数目，从而抑制制造成本的增加。
附图说明
图1示出了根据本发明的实施方式的半导体器件中的功率元件、整流元件等的布局以及电流在其中的流动。
图2是根据常规技术的半导体器件的电路图，其中，双芯片组的功率元件由梁式引线连接。
图3示出了根据常规技术的半导体器件中的电流的布局和方向，其中，双芯片组的功率元件中的每个元件由梁式引线单独连接。
图4示出了根据常规技术的半导体器件中的电流的布局和方向，其中，双芯片组的功率元件由一个梁式引线共同连接。
具体实施方式
下面基于附图中示出的实施方式对本发明的实施方式进行详细描述。
首先，描述根据本实施方式的半导体器件的总体配置。
例如，本实施方式的半导体器件被用于控制供应至安装于电动车辆内用于驱动的电机的电力的逆变器中。
如图1所示，本实施方式的半导体器件也设置有一电源模块，该电源模块包括通过并联连接两个IGBT 1a和1b以及两个二极管2a和2b而配置的上臂10。该半导体器件还设置有一电源模块，该电源模块包括通过并联连接两个IGBT 1c和1d以及两个二极管2c和2d而配置的下臂11。这些电源模块是上述逆变器的一部分。
绝缘衬底5在其上固定有以下结构：在图1中右侧(上臂侧)由导电金属形成的矩形正侧图案4a；从图1左侧水平延伸至靠近近似中心并且然后向下转弯并垂直向下延伸以形成倒L形的由导电金属形成的负侧图案4b；以及在接近图1中心位置处从图1顶部边缘延伸到底部边缘并且然后向左(下臂侧)转、水平延伸到左边缘并且从左下边缘垂直上升至接近正侧图案4b以形成U形的由导电金属形成的输出侧图案4c。
在绝缘衬底5的一个边缘处(在图1中的顶部边缘处)，设置正侧输入端子P并且该正侧输入端子P连接至正侧图案4a。在绝缘衬底5的相同边缘处，设置负侧输入端子N并且该负侧输入端子N连接至负侧图案4b。在绝缘衬底5的另一边缘处(在图1的底部边缘处)，设置输出端子O并且该输出端子O连接至输出侧图案4c。
在上臂侧，电流沿相反方向流动的IGBT 1a和二极管2a形成一对。例如，在IGBT 1a为n-沟道型的情况下，IGBT 1a的集电极侧和二极管2a的阴极侧被固定至设置在绝缘衬底5上的正侧图案4a。IGBT 1a的发射极侧和二极管2a的阳极侧组合并通过梁式引线3a的一侧彼此连接，并且梁式引线3a的另一侧连接至设置在绝缘衬底5上的输出侧图案4c。因而，使IGBT 1a和二极管2a通过梁式引线3a彼此导电。
类似地，电流沿相反方向流动的上臂的IGBT 1b和二极管2b形成另一对。例如，在IGBT 1b为n-沟道型的情况下，IGBT 1b的集电极侧和二极管2b的阴极侧被固定至正侧图案4a。IGBT 1b的发射极侧和二极管2b的阳极侧组合并通过梁式引线3b的一侧彼此连接，并且梁式引线3b的另一侧连接至输出侧图案4c。因而，使IGBT 1b和二极管2b通过梁式引线3b彼此导电。
另一方面，在下臂侧，电流沿相反方向流动的IGBT 1c和二极管2c形成一对。例如，在IGBT 1c为n-沟道型的情况下，IGBT 1c的集电极侧和二极管2c的阴极侧被固定至输出侧图案4c。IGBT 1c的发射极侧和二极管2c的阳极侧组合并通过梁式引线3c的一侧彼此连接，并且梁式引线3c的另一侧连接至设置在绝缘衬底5上的负侧图案4b。因而，使IGBT 1c和二极管2c通过梁式引线3c彼此导电。
类似地，电流沿相反方向流动的下臂的IGBT 1d和二极管2d形成另一对。例如，在IGBT 1d为n-沟道型的情况下，IGBT 1d的集电极侧和二极管2d的阴极侧被固定至输出侧图案4c。IGBT 1d的发射极侧和二极管2d的阳极侧组合并通过梁式引线3d的一侧彼此连接，并且梁式引线3d的另一侧连接至负侧图案4b。因而，使IGBT 1d和二极管2d通过梁式引线3d彼此导电。
虽然未示出，但通过控制单元(未示出)根据加速抑制量、车辆速度等确定的用于控制的栅极信号可被施加于IGBT 1a至1d中的每一个的栅极。
提供与上臂10和下臂11的组合相类似的三个组合，并且其输出端被连接至三相交流电机的相应线圈。
接下来，描述逆变器(其作为一种具有上述配置的半导体器件)的操作。
在上述半导体器件中，上臂10的IGBT 1a和1b以及下臂11的二极管2c和2d形成降压斩波器(step-down chopper)，并且下臂11的IGBT 1c和1d以及上臂10的二极管2a和2b形成升压斩波器(step-up chopper)。
通过互补切换上臂10和下臂11的IGBT 1a、1b和1c、1d，可以不考虑电流的极性而进行电力转换。
换言之，通过接通上臂10的IGBT 1a和1b和断开下臂11的IGBT 1c和1d，正反应电流流过上臂10的IGBT 1a和1b进入连接至输出端子O的电机线圈。相反，通过接通下臂11的IGBT 1c和1d和断开上臂10的IGBT 1a和1b，负反应电流流过IGBT 1c和1d。
使用二极管2a至2d是因为通过使电机产生的感应电压能量流向直流电源，二极管2a至2d防止电机的端电压由于感应电压而上升，这会导致IGBT 1a至1d被过电压损坏。
此外，在正反应电流流动的上述前一种情况下，上臂10的二极管2a和2b阻挡电流流过这些二极管2a和2b，然而，在负反应电流流动的上述后一种情况下，下臂11的二极管2c和2d阻挡电流流过这些二极管2c和2d。
因此，电流不会同时流过上臂10的IGBT 1a和1b以及二极管2a和2b，并且类似地，电流不会同时流过下臂11的IGBT 1c和1d以及二极管2c和2d。
上臂10的IGBT 1a和1b通过不同的梁式引线3a和3b单独连接，并且当IGBT 1a和1b接通时，电流不会流到连接至梁式引线3a和3b的二极管2a和2b。因此，流过梁式引线3a和3b的电流减小。
类似地，下臂11的IGBT 1c和1d通过不同的梁式引线3c和3d单独连接，并且当IGBT 1c和1d接通时，电流不会流到连接至梁式引线3c和3d的二极管2c和2d。因此，流过梁式引线3c和3d的电流减小。
应注意在图1中，实线描绘的箭头表示当IGBT运行时的电流方向，以及虚线描绘的箭头表示当二极管运行时的电流方向。
正如从以上描述中清楚看出，在本实施方式的半导体器件中，电源模块包括各自通过将多个IGBT 1a至1d与多个二极管2a至2d并联连接而配置的上臂10和下臂11，并且一个臂10(或11)中的电流流过多个单独配线的梁式引线3a至3d。此时，在半导体器件中，一个臂10(或11)中的部分IGBT 1a和1b(和/或1c和1d)以及部分二极管2a和2b(和/或2c和2d)形成对并通过共同的梁式引线3a至3d连接。因此，在这些对中，不会同时接通IGBT和二极管，且因此，电流不会同时流至两个元件。
换言之，仅一个芯片相当(成对中的IGBT或二极管)的电流同时流过梁式引线3a至3d。
因此，能够抑制并且均衡流过梁式引线3a至3d的电流量。因此，能够防止梁式引线3a至3d到达很高温度，并且梁式引线3a至3d不必被制作得很大。
此外，与单独配线梁式引线时相比，在数量上梁式引线3a至3d较少，因而抑制了制造成本的增加。
已基于上述实施方式描述了本发明，然而，本发明并不限于这些实施方式并且包括在本发明的精神和范围内的任何设计变形等。
例如，在实施方式中，每个臂被配置为包括两个IGBT和两个二极管，然而不限于该实施方式。包括用三个或更多的各个功率元件和整流元件配置的一个臂的情况，并且该半导体器件可以有多组。
本发明也可仅应用于仅多个功率元件和整流元件在一个臂中的部分的一对。
参考标记说明
1a、1b：上臂侧的IGBT(功率元件)
1c、1d：下臂侧的IGBT(功率元件)
2a、2b：上臂侧的二极管(整流元件)
2c、2d：下臂侧的二极管(整流元件)
3a至3d：梁式引线
4a：正侧图案
4b：负侧图案
4c：输出侧图案
5：绝缘衬底
10：上臂
11：下臂
N：负侧输入端子
P：正侧输入端子
O：输出端子

Claims (3)

1.一种包括电源模块的半导体器件，所述电源模块包括各自通过并联连接多个功率元件与多个整流元件而配置的上臂和下臂，到所述电源模块中的一个臂的电流流过多个单独配线的梁式引线，
所述一个臂中的部分所述功率元件和部分所述整流元件形成一对并通过共同的梁式引线连接。
2.一种包括电源模块的半导体器件，所述电源模块包括各自通过并联连接多个功率元件和数量上与所述功率元件相同的多个整流元件而配置的上臂和下臂，到所述电源模块中的一个臂的电流流过多个单独配线的梁式引线，
所述一个臂中的所述功率元件的部分和数量上与所述功率元件的所述部分相同的所述整流元件的部分形成一对并通过共同的梁式引线连接。
3.一种包括电源模块的半导体器件，所述电源模块包括各自通过并联连接两个功率元件芯片与两个整流元件芯片而配置的上臂和下臂，到所述电源模块中的一个臂的电流流过多个单独配线的梁式引线，
所述一个臂中的一个所述功率元件芯片和一个所述整流元件芯片形成一对并通过共同的梁式引线连接。
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