CN104516166A - 用于制造液晶显示器的方法 - Google Patents
用于制造液晶显示器的方法 Download PDFInfo
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
一种用于制造液晶显示器的方法,该方法包括如下步骤:使用第一掩模在衬底上形成栅极;在所述栅极上形成栅绝缘膜;使用第二掩模在所述栅绝缘膜上形成有源层、源极和漏极;在所述有源层、所述源极和所述漏极上形成第一钝化膜;在所述第一钝化膜上顺序地层压有机膜和透明电极层,并且使用第三掩模形成有机绝缘膜和公共电极;在所述有机绝缘膜和所述公共电极上形成第二钝化膜,并且使用第四掩模暴露所述漏极;以及使用第五掩模在所述第二钝化膜上形成像素电极,以使所述像素电极连接到所述漏极。
Description
技术领域
本申请涉及一种面内开关型液晶显示器,更具体地,涉及一种用于制造液晶显示器的方法,该方法能够通过减少掩模的数目来缩短节拍时间(tact time)并提高生产率。
背景技术
液晶显示器通常是使用液晶的光学各向异性和偏振特性来驱动的。由于液晶具有细长的形状,因此液晶分子具有对准的取向。液晶分子的对准的取向可以通过施加电场至液晶来进行控制。因此,当对液晶分子的对准的取向进行调节时,液晶分子的对准可以被改变。光在液晶分子的对准的取向上依据光学各向异性而被折射,从而显示出图像信息。
有源矩阵液晶显示器(AMLCD)(以下简称为“液晶显示器”)因其优异的分辨率和运动图像显示性能,目前已经备受关注,在有源矩阵液晶显示器中,薄膜晶体管和连接到所述薄膜晶体管的像素电极被布置成矩阵形式。液晶显示器包括:公共电极形成在其上的滤色片衬底、像素电极形成在其上的阵列衬底、以及置于该滤色片衬底和该阵列衬底之间的液晶。在液晶显示器中,公共电极和像素电极通过垂直施加的电场来驱动液晶,从而提供优异的透射率、优异的孔径比等等。然而,通过垂直施加的电场来驱动液晶的缺点在于,液晶不能提供良好的视角特性。因此,为了克服该缺点,提出了具有优异的视角特性的面内开关型液晶显示器。
图1A到图1F是示出了用于制造面内开关型液晶显示器的常规方法的各工序的剖面图。
参见图1A,栅极焊盘电极16和栅极18通过层压衬底10上的透明导电层12和金属层14并且使用第一掩模图案化透明导电层12和金属层14而形成。接下来,参见图1B,有源层21、源极29、漏极28、数据焊盘电极25和数据线27通过在衬底10上层压栅绝缘膜20然后层压有源层22和金属层24,并且使用第二掩模图案化有源层22和金属层24而形成。接下来,参见图1C,暴露漏极28的第一接触孔CH1通过在衬底10上层压第一钝化膜30,并且使用第三掩模图案化第一钝化膜30而形成,并且然后,具有暴露漏极28的第一接触孔CH1的有机绝缘膜35通过施加有机膜并且使用第四掩模图案化该有机膜而形成。
接下来,参见图1D,公共电极45通过在有机绝缘膜35上层压透明导电材料,并且使用第五掩模图案化该透明导电材料而形成。接下来,参见图1E,暴露第二接触孔CH2的第三接触孔CH3、暴露栅极焊盘电极16的第四接触孔CH4、以及暴露数据焊盘电极27的第五接触孔CH5,通过在衬底10上形成第二钝化膜50并且使用第六掩模图案化第二钝化膜50而形成。最后,连接到漏极28的像素电极60通过在衬底10上层压透明导电材料,并且使用第七掩模图案化该透明导电材料而形成,从而制造液晶显示器。
总共使用七个掩模,用于制造液晶显示器的上述常规方法因制造成本高和节拍时间长而具有生产率低的问题。
发明内容
本申请的一方面是提供一种用于制造液晶显示器的方法,该方法能够通过减少掩模的数目来缩短节拍时间并提高生产率。
在一方面,存在一种用于制造液晶显示器的方法,该方法包括如下步骤:使用第一掩模在衬底上形成栅极;在所述栅极上形成栅绝缘膜;使用第二掩模在所述栅绝缘膜上形成有源层、源极和漏极;在所述有源层、所述源极和所述漏极上形成第一钝化膜;在所述第一钝化膜上顺序地层压有机膜和透明电极层,并且使用第三掩模形成有机绝缘膜和公共电极;在所述有机绝缘膜和所述公共电极上形成第二钝化膜,并且使用第四掩模暴露所述漏极;以及使用第五掩模在所述第二钝化膜上形成像素电极,以使所述像素电极连接到所述漏极。
本申请要求2013年9月30日提交的韩国专利申请No.10-2013-0116006的优先权,该韩国专利申请通过引用的方式出于所有目的被并入到本文中,犹如完全地在本文中阐述一样。
附图说明
附图被包括进来以提供对本发明的进一步理解,并且附图被并入并构成本说明书的一部分,附图图示了本发明的实施方式,并且与本说明书一起用来解释本发明的原理。在附图中:
图1A到图1F是示出了用于制造面内开关型液晶显示器的常规方法的各工序的剖面图;
图2是示出了根据本发明的一种示例性实施方式的面内开关型液晶显示器的俯视图;
图3是示出了根据本发明的一种示例性实施方式的面内开关型液晶显示器的剖视图;
图4A到图4G是示出了根据本发明的用于制造面内开关型液晶显示器的方法的各工序的视图;
图5A和图5B是示出了根据本发明的比较示例所制造出的液晶显示器的第一接触孔部分和第二接触孔部分的SEM图像;以及
图6A和图6B是示出了根据本发明的示例性实施方式所制造出的液晶显示器的第一接触孔部分和第二接触孔部分的SEM图像。
具体实施方式
现在将详细地描述本发明的实施方式,实施方式的示例被图示于附图中。尽可能地,在整个附图用中相同的附图标记将表示相同或相似的部分。将要注意的是,如果确定现有技术会误导本发明的实施方式,那么将省略这些现有技术的详细描述。
图2是示出了根据本发明的一种示例性实施方式的面内开关型液晶显示器的俯视图。图3是示出了根据本发明的一种示例性实施方式的面内开关型液晶显示器的剖视图。
参见图2,根据本发明的示例性实施方式的面内开关型液晶显示器包括:在一个方向上布置在衬底(未示出)上的选通线110、平行并且邻近于选通线110布置的公共线120、以及与选通线110交叉以限定多个子像素P的数据线130。从选通线110延伸的栅极112、从数据线130延伸的源极132以及与源极132间隔开的漏极133形成在选通线110和数据线130的交叉处的子像素P中。
连接到漏极133并且与公共线120交叠的像素电极160形成在子像素P内。像素电极160呈具有位于子像素P内的多个狭缝S的板的形状。与公共线120交叠的像素电极160与公共线120一起构成存储电容器Cst。公共电极150与子像素P的像素电极160交叠。公共电极150连接到公共线120,并且具有板状的形状。这样构造液晶显示器100通过在像素电极160和公共电极150之间形成水平电场和垂直电场来驱动液晶。
更具体地,下面将参照图3描述根据本发明的一种示例性实施方式的面内开关型液晶显示器的结构。
参见图3,在根据本发明的示例性实施方式的面内开关型液晶显示器中,栅极112和栅极焊盘电极116形成在衬底105上。栅极112和栅极焊盘电极116由透明导电层113和第一金属层114这两层组成。透明导电层113由选自由ITO、IZO和ITZO构成的组中的一种制成,并且第一金属层114由选自由铝Al、铬Cr、钼Mo、铜Cu、金Au和钛Ti构成的组中的一种制成。
栅绝缘膜125形成在栅极112和栅极焊盘电极116上以使它们绝缘,并且有源层129形成在栅绝缘膜125上。源极132和漏极133连接到有源层129,并且数据线130和数据焊盘电极135形成在一个侧处。数据线130和数据焊盘电极135由半导体层136和第二金属层137层这两层组成。半导体层136由选自由非晶硅、多晶硅和金属氧化物构成的组中的一种制成。第二金属层137由选自由铝Al、铬Cr、钼Mo、铜Cu、金Au和钛Ti构成的组中的一种制成。相应地,有源层129、源极132、漏极133和栅极110构成薄膜晶体管TFT。
第一钝化膜140形成薄膜晶体管TFT上,并且具有暴露漏极133的第一接触孔CH1的有机绝缘膜145形成在第一钝化膜140上。公共电极150形成有机绝缘膜145上。公共电极150具有暴露第一接触孔CH1的第二接触孔CH2,并且具有板状的形状。公共电极150是由选自由ITO、IZO和ITZO构成的组中的一种制成的具有透光性的透明电极。第二钝化膜155形成为使公共电极150绝缘。像素电极160、数据焊盘162和栅极焊盘164形成在第二钝化膜155上。像素电极160、数据焊盘162和栅极焊盘164是像公共电极150一样的透明电极,并且由选自由ITO、IZO和ITZO构成的组中的一种制成。数据焊盘162通过第三接触孔CH3而连接到数据焊盘电极135,并且栅极焊盘164通过第四接触孔CH4而连接到栅极焊盘电极116。另外,像素电极160通过第五接触孔CH5而连接到漏极133。相应地,一个在上面并且另一个在下面放置的像素电极160和公共电极150形成水平电场和垂直电场。
在下文中,将在下面描述根据本发明的一种示例性实施方式的用于制造面内开关型液晶显示器的方法。在以下的描述中,一种用于制造根据图3中的上述结构的面内开关型液晶显示器的方法将被用作示例。
图4A到图4G是示出了根据本发明的用于制造面内开关型液晶显示器的方法的各工序的视图。
参见图4A,在根据本发明的一种示例性实施方式的用于制造面内开关型液晶显示器的方法中,在衬底105上沉积透明导电材料(例如,选自由ITO、IZO和ITZO构成的组中的一种)和具有低电阻特性的金属材料(例如,选自由铝Al、铝合金、铜Cu、铜合金、铬Cr、钼Mo、钛Ti和金Au构成的组中的一种)。接下来,通过使用第一掩模图案化透明导电材料和金属材料来形成栅极112和栅极焊盘电极116,栅极112和栅极焊盘电极116各自均由透明导电层113和第一金属层114这两层组成。透明导电材料和金属材料同样地被图案化,以形成栅极112和栅极焊盘电极116。应当指出的是,虽然在本实施方式中透明导电层113和第一金属层114被放置成一个在下面并且另一个在上面,但是透明导电层113和第一金属层114也可以被放置成一个在上面并且另一个在下面。
接下来,参见图4B,通过在其上形成有栅极112和栅极焊盘电极116的衬底105上沉积无机绝缘材料(例如,氧化硅SiOx或氮化硅SiNx)来形成栅绝缘膜125。随后,在其上形成有栅绝缘膜125的衬底105上层压非晶硅、通过非晶硅的结晶得到的多晶硅、或者金属氧化物,并且在层叠的顶部上沉积具有低电阻特性的金属材料(例如,选自由铝Al、铝合金、铜Cu、铜合金、铬Cr、钼Mo和钛Ti构成的组中的一种)。使用第二掩模(其为半色调掩模)来同时图案化非晶硅、多晶硅或者金属氧化物中的一种以及金属材料,由此形成有源层129、源极132、漏极133、数据线130和数据焊盘电极135。数据线130和数据焊盘电极135由半导体层136和第二金属层137这两层组成。虽然有源层129、源极132和漏极133通过衍射而暴露,并且因此在大小上不同,但是有源层129由半导体层136的单层形成,并且源极132和漏极133由第二金属层137的单层形成。相应地,栅极112、有源层129、源极132和漏极133构成薄膜晶体管TFT。
接下来,参见图4C,通过在其上形成有薄膜晶体管TFT的衬底105的整个表面上沉积无机绝缘材料(例如,氧化硅SiOx或氮化硅SiNx)来形成第一钝化膜140。随后,通过将有机绝缘材料施加到在其上形成有第一钝化膜140的衬底105的整个表面上来形成有机膜141。例如,有机膜141可以由选自由如下项构成的组中的一种制成:由光激亚克力(photo acryl)PAC、聚苯乙烯、聚甲基丙烯酸甲酯(PMMA)、聚丙烯腈(PAN)、聚酰胺、聚酰亚胺、聚丙烯酸酯(polyacrylethere)、杂环聚合物、聚对二甲苯、含氟聚合物、环氧树脂、苯并环丁烯类树脂、硅氧烷类树脂和硅烷树脂,但是不限定于它们,并且任何有机绝缘材料都能够被使用,只要它是高度透明并且低诱电性(dielectric)的。随后,通过在其上形成有有机膜141的衬底105的整个表面上沉积透明导电材料来形成透明电极层142。透明电极层142由选自由ITO、IZO和ITZO构成的组中的一种制成。接下来,通过将光刻胶PR施加到在其上形成有透明电极层142的衬底105上并且使用第三掩模图案化该光刻胶,来形成光刻胶图案143。于是,光刻胶图案143保留在了待形成公共电极的地方。
接下来,参见图4D,通过使用光刻胶图案143作为掩模湿蚀刻透明电极层142的暴露部分,来形成公共电极150。因为由于湿蚀刻特性,公共电极150在大小上比光刻胶图案143小,因此应当在该工艺中将这种余量考虑在内来形成光刻胶图案143。此外,与薄膜晶体管TFT的漏极133对应地,在公共电极150内形成第二接触孔CH2。
接下来,参见图4E,在湿蚀刻完成之后,通过使用光刻胶图案143作为掩模干蚀刻有机膜141的暴露部分,来形成有机绝缘膜145。选择性地仅干蚀刻有机膜141可能是困难的,因此可以部分地留下有机膜141,或者也可以蚀刻在有机膜141下方的第一钝化膜140。此外,干蚀刻有机膜141可能会导致位于有机膜141上方的公共电极150被蚀刻成倒锥形的形状。因此,应当在湿蚀刻期间过蚀刻公共电极150,使得公共电极150具有正锥形的形状。于此,与薄膜晶体管TFT的漏极133对应地,在有机绝缘膜145上形成第一接触孔CH1,以暴露栅极焊盘电极116和数据焊盘电极135所处的焊盘部分。在上述湿蚀刻工艺和干蚀刻工艺两者都完成之后,将光刻胶图案143剥离出来。相应地,通过干蚀刻透明电极层来形成公共电极150,并且通过湿蚀刻有机膜来形成有机绝缘膜145。
接下来,参见图4F,通过在其上形成有公共电极150和有机绝缘膜145的衬底105上沉积无机绝缘材料(例如,氧化硅SiOx或氮化硅SiNx)来形成第二钝化膜155。随后,通过使用第四掩模干蚀刻第二钝化膜155和第一钝化膜140,来形成暴露数据焊盘电极135的第三接触孔CH3、暴露栅极焊盘电极116的第四接触孔CH4以及暴露薄膜晶体管TFT的漏极133的第五接触孔CH5。当形成第四接触孔CH4时,栅绝缘膜125也被干蚀刻。
接下来,参见图4G,通过在其上形成有第三至第五接触孔CH3、CH4和CH5的衬底105的整个表面上沉积透明导电材料(例如,选自由ITO、IZO和ITZO构成的组中的一种)并且使用第五掩模图形化该透明导电材料,来形成像素电极160、数据焊盘162和栅极焊盘164。像素电极160具有多个狭缝S,并且通过第五接触孔CH5连接到薄膜晶体管TFT的漏极133。此外,数据焊盘162通过第三接触孔CH3连接到数据焊盘电极135,并且栅极焊盘164通过第四接触孔CH4连接到栅极焊盘电极116。相应地,制造出根据本发明的一种示例性实施方式的液晶显示器100。
如从上面所看到的,总共使用五个掩模来制造出根据本发明的一种示例性实施方式的面内开关型液晶显示器,这比常规技术中所使用的七个掩模少两个。相应地,其具有如下优点,即通过缩短液晶显示器制造工艺的节拍时间并且降低制造成本来提高生产率。
图5A和图5B是示出了根据本发明的比较示例所制造出的液晶显示器的第一接触孔部分和第二接触孔部分的SEM图像。图6A和6B是示出了根据本发明的示例性实施方式所制造出的液晶显示器的第一接触孔部分和第二接触孔部分的SEM图像。
在根据本发明的比较示例的制造工艺中,公共电极和第二接触孔在没有过蚀刻透明电极层的情况下形成,并且然后通过湿蚀刻有机膜来形成有机绝缘膜和第一接触孔。另一方面,在本发明的示例性实施方式中,公共电极和第二接触孔通过过蚀刻透明电极层而形成。
参见图5A和图5B,可以观察到,在根据本发明的比较示例所制造出的液晶显示器中,表示为ITO的公共电极具有倒锥形的形状,其尖端突出。另一方面,参见图6A和图6B,可以观察到,在根据本发明的示例性实施方式所制造出的液晶显示器中,公共电极具有正锥形的形状,并且下方的钝化膜具有良好的台阶覆盖性并且很好地逐渐变细。
虽然已经参照本发明的多种示例性实施方式来对本公开进行了描述,但是应当理解的是,本领域技术人员能够构思出落入本公开的原理的精神和范围内的许多其它的修改和实施方式。更具体地,在说明书、附图和所附权利要求书的范围内的主题组合布置的组成部件和/或布置中,各种变型和修改是可能的。除了这些组成部件和/或布置中的各种变型和修改以外,另选的使用对于本领域技术人员也将是显而易见的。
Claims (5)
1.一种用于制造液晶显示器的方法,所述方法包括如下步骤:
使用第一掩模在衬底上形成栅极;
在所述栅极上形成栅绝缘膜;
使用第二掩模在所述栅绝缘膜上形成有源层、源极和漏极;
在所述有源层、所述源极和所述漏极上形成第一钝化膜;
在所述第一钝化膜上顺序地层压有机膜和透明电极层,并且使用第三掩模形成有机绝缘膜和公共电极;
在所述有机绝缘膜和所述公共电极上形成第二钝化膜,并且使用第四掩模暴露所述漏极;以及
使用第五掩模在所述第二钝化膜上形成像素电极,以使所述像素电极连接到所述漏极。
2.根据权利要求1所述的方法,其中,形成有机绝缘膜和公共电极包括如下步骤:
在所述透明电极层上形成光刻胶图案;
通过蚀刻所述透明电极层形成公共电极;以及
通过蚀刻所述有机膜形成有机绝缘膜。
3.根据权利要求2所述的方法,其中,所述透明电极层被湿蚀刻,并且所述有机膜被干蚀刻。
4.根据权利要求3所述的方法,其中,所述透明电极层被过蚀刻。
5.根据权利要求3所述的方法,其中,所述有机膜在所述透明电极层被蚀刻之后被蚀刻。
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US20150092136A1 (en) | 2015-04-02 |
KR20150036940A (ko) | 2015-04-08 |
US9857648B2 (en) | 2018-01-02 |
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