CN104508557B - 图案形成方法、光化射线敏感或放射线敏感树脂组合物、抗蚀剂膜和制造电子器件的方法 - Google Patents
图案形成方法、光化射线敏感或放射线敏感树脂组合物、抗蚀剂膜和制造电子器件的方法 Download PDFInfo
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- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012217564A JP6175226B2 (ja) | 2012-09-28 | 2012-09-28 | パターン形成方法、半導体製造用の感活性光線性又は感放射線性樹脂組成物、及び電子デバイスの製造方法 |
| JP2012-217564 | 2012-09-28 | ||
| PCT/JP2013/076178 WO2014051018A1 (en) | 2012-09-28 | 2013-09-19 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104508557A CN104508557A (zh) | 2015-04-08 |
| CN104508557B true CN104508557B (zh) | 2019-05-31 |
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| CN201380039975.9A Expired - Fee Related CN104508557B (zh) | 2012-09-28 | 2013-09-19 | 图案形成方法、光化射线敏感或放射线敏感树脂组合物、抗蚀剂膜和制造电子器件的方法 |
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| US (1) | US9513547B2 (enExample) |
| JP (1) | JP6175226B2 (enExample) |
| KR (1) | KR20150028336A (enExample) |
| CN (1) | CN104508557B (enExample) |
| TW (1) | TWI564662B (enExample) |
| WO (1) | WO2014051018A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| JP2015099311A (ja) * | 2013-11-20 | 2015-05-28 | Jsr株式会社 | ネガ型レジストパターン形成方法 |
| US9696624B2 (en) | 2015-07-29 | 2017-07-04 | Rohm And Haas Electronic Materials Llc | Nanoparticle-polymer resists |
| KR102210616B1 (ko) * | 2016-08-26 | 2021-02-02 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 화합물, 및 수지 |
| KR102272628B1 (ko) * | 2016-08-31 | 2021-07-05 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법 및 전자 디바이스의 제조 방법 |
| US10520813B2 (en) * | 2016-12-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd | Extreme ultraviolet photoresist with high-efficiency electron transfer |
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2012
- 2012-09-28 JP JP2012217564A patent/JP6175226B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-19 CN CN201380039975.9A patent/CN104508557B/zh not_active Expired - Fee Related
- 2013-09-19 WO PCT/JP2013/076178 patent/WO2014051018A1/en not_active Ceased
- 2013-09-19 KR KR1020157002527A patent/KR20150028336A/ko not_active Ceased
- 2013-09-26 TW TW102134656A patent/TWI564662B/zh not_active IP Right Cessation
-
2015
- 2015-01-28 US US14/607,146 patent/US9513547B2/en not_active Expired - Fee Related
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| TW200839467A (en) * | 2006-12-25 | 2008-10-01 | Fujifilm Corp | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming metho |
| JP2012133329A (ja) * | 2010-11-30 | 2012-07-12 | Fujifilm Corp | ネガ型パターン形成方法及びレジストパターン |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014051018A1 (en) | 2014-04-03 |
| US9513547B2 (en) | 2016-12-06 |
| JP6175226B2 (ja) | 2017-08-02 |
| KR20150028336A (ko) | 2015-03-13 |
| CN104508557A (zh) | 2015-04-08 |
| TWI564662B (zh) | 2017-01-01 |
| TW201413386A (zh) | 2014-04-01 |
| JP2014071304A (ja) | 2014-04-21 |
| US20150147699A1 (en) | 2015-05-28 |
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