CN104487530B - 树脂糊剂组合物 - Google Patents
树脂糊剂组合物 Download PDFInfo
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- CN104487530B CN104487530B CN201380039424.2A CN201380039424A CN104487530B CN 104487530 B CN104487530 B CN 104487530B CN 201380039424 A CN201380039424 A CN 201380039424A CN 104487530 B CN104487530 B CN 104487530B
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- paste composition
- resin paste
- methyl
- silver powder
- conductor element
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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Abstract
本发明提供一种廉价的树脂糊剂组合物及使用了该树脂糊剂组合物的半导体装置,所述树脂糊剂组合物适合用于半导体芯片等导体元件与引线框等支撑构件的粘接,能够降低作为稀有价值高且昂贵的材料的银的使用量,同时导电性、导热性及粘接性优异,并且涂布操作性、机械特性也优异。
Description
技术领域
本发明涉及一种树脂糊剂组合物。
背景技术
以往,作为用于半导体装置的芯片焊接材料,已知Au-Si共晶、焊料、树脂糊剂组合物等,但是从操作性及成本的方面出发,广泛使用的是树脂糊剂组合物。
一般而言,半导体装置是将半导体芯片等元件利用芯片焊接材料粘接于引线框等支撑构件而制造的。对于芯片焊接材料而言,要求用于粘接半导体元件与引线框等支撑构件的高粘接强度,另一方面,还要求将由这两者的热膨胀率差产生的应力吸收的性能。为了实现高粘接强度并同时降低由热膨胀率差而产生的翘曲,提出了像专利文献1那样的环氧树脂与丙烯酸类树脂的混合树脂系的树脂糊剂组合物。
然而,随着半导体芯片等半导体元件的高集成化及微细化,要求导电性、导热性等特性的高可靠性。因此,对于在芯片焊接材料中使用的树脂糊剂组合物也要求粘接强度、以及导电性、导热性。为了对树脂糊剂组合物赋予此种性能,作为导电性填料,例如可以考虑使用金粉、银粉、铜粉等金属粉,现在主要采用的是使用了银粉的树脂糊剂组合物。其原因在于:银粉不及金粉的稀有价值,也不像铜粉那样容易被氧化而使保存稳定性差,进而,操作性和机械特性优异,树脂糊剂组合物所要求的诸特性也优异。
但是,由于银粉也是贵金属,并且是稀有价值高且昂贵的材料,因此作为用于树脂糊剂组合物的导电性填料,正在开发同时使用银粉和更容易获得且廉价的其他导电性填料的导电性填料。
为此,作为更容易获得且廉价的其他导电性填料,从稳定性、导电性的观点出发,一直在研究选定铝粉且同时使用银粉的情况(参照专利文献2)。但是,对于专利文献2中记载的含金属糊剂而言,铝的金属粉末与银等的金属粉末的体积比为5∶95~40∶60,还称不上充分减少银等金属粉末的使用量。此外,在极度削减糊剂中的银粉的量的情况下,与以往的含有银粉的树脂糊剂组合物相比,还称不上具有同等以上的特性。此种情况下的现状是:即使削减糊剂中的银粉的量,也无法得到具有与含有大量现有银粉的现有树脂糊剂组合物同等以上特性的树脂糊剂组合物。
专利文献1:日本特开2002-12738号公报
专利文献2:日本专利第4569109号公报
发明内容
发明所要解决的课题
本发明的目的在于提供一种廉价的树脂糊剂组合物及使用了该树脂糊剂组合物的半导体装置,所述树脂糊剂组合物适合用于半导体芯片等导体元件与引线框等支撑构件的粘接,能够降低作为稀有价值高且昂贵的材料的银的使用量,同时导电性、导热性及粘接性优异,并且涂布操作性、机械特性也优异。
用于解决课题的手段
本发明人等为了解决上述课题而进行了深入研究,结果发现能够通过下述的发明来解决上述课题。即,本发明提供下述的树脂糊剂组合物及使用了该树脂糊剂组合物的半导体装置。
1.一种导体元件粘接用树脂糊剂组合物,其为含有(A)(甲基)丙烯酰基化合物、(B)粘合剂树脂、(C)胺化合物、(D)聚合引发剂、(E)可挠化剂、(F)银粉及(G)铝粉的树脂糊剂组合物,该树脂糊剂组合物中的(F)银粉的含量为40质量%以下,该(G)铝粉/该(F)银粉的质量比为0.8~3.5,该(F)银粉含有振实密度(tap density)为2.5g/cm3以下的第1银粉,并且该树脂糊剂组合物中的该第1银粉的含量为5质量%以上。
2.根据上述1所述的导体元件粘接用树脂糊剂组合物,其还包含(H)偶联剂。
3.一种半导体装置,其是将半导体元件和支撑构件利用上述1或2所述的导体元件粘接用树脂糊剂组合物的固化物接合、并且利用密封剂将该半导体元件和该支撑构件的至少一部分密封而成的。
发明效果
根据本发明,得到一种廉价的树脂糊剂组合物及使用了该树脂糊剂组合物的半导体装置,所述树脂糊剂组合物适合用于半导体芯片等导体元件与引线框等支撑构件的粘接,能够降低作为稀有价值高且昂贵的材料的银的使用量,同时导电性、导热性及粘接性优异,并且涂布操作性、机械特性也优异。
附图说明
图1是表示用于树脂糊剂组合物的铝粉的粒子的外观的电子显微镜照片。
图2是用于说明用于测定体积电阻率的试样的制作步骤(a)~(d)的示意图。
具体实施方式
〔导体元件粘接用树脂糊剂组合物〕
本发明的导体元件粘接用树脂糊剂组合物为含有(A)(甲基)丙烯酰基化合物、(B)粘合剂树脂、(C)胺化合物、(D)聚合引发剂、(E)可挠化剂、(F)银粉及(G)铝粉的树脂糊剂组合物,该树脂糊剂组合物中的(F)银粉的含量为40质量%以下,该(G)铝粉/该(F)银粉的质量比为0.8~3.5,该(F)银粉含有振实密度为2.5g/cm3以下的第1银粉,并且该树脂糊剂组合物中的该第1银粉的含量为5质量%以上。以下,对各成分进行说明。
(A)(甲基)丙烯酰基化合物只要是该化合物中具有(甲基)丙烯酰基的化合物,则并无特别限制,优选为在该化合物中具有1个以上的(甲基)丙烯酰氧基的(甲基)丙烯酸酯化合物。作为此种(甲基)丙烯酰基化合物,可优选列举以下的通式(I)~(X)所示的化合物。
[化1]
通式(I)中,R1表示氢或甲基,R2表示碳数1~100、优选碳数1~36的具有2价脂肪族或环状结构的脂肪族烃基。
作为通式(I)所示的(甲基)丙烯酰基化合物,可优选列举(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸异戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸硬脂基酯、(甲基)丙烯酸异硬脂基酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸异冰片基酯、(甲基)丙烯酸三环[5.2.1.02,6]癸酯、(甲基)丙烯酸2-(三环)[5.2.1.02,6]癸-3-烯-8或9-基氧基乙酯等(甲基)丙烯酸酯化合物。
[化2]
通式(II)中,R1及R2分别与上述所用相同。
作为通式(II)所示的(甲基)丙烯酰基化合物,可优选列举(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、二聚醇单(甲基)丙烯酸酯等(甲基)丙烯酸酯化合物。
[化3]
通式(III)中,R1与上述所用相同,R3表示氢、甲基或苯氧基甲基,R4表示氢、碳数1~6的烷基、苯基或苯甲酰基,n表示1~50的整数。
作为通式(III)所示的(甲基)丙烯酰基化合物,可优选列举二乙二醇(甲基)丙烯酸酯、聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、(甲基)丙烯酸2-甲氧基乙酯、(甲基)丙烯酸2-乙氧基乙酯、(甲基)丙烯酸2-丁氧基乙酯、甲氧基二乙二醇(甲基)丙烯酸酯、甲氧基聚乙二醇(甲基)丙烯酸酯、(甲基)丙烯酸2-苯氧基乙酯、苯氧基二乙二醇(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、2-苯甲酰氧基乙基(甲基)丙烯酸酯、(甲基)丙烯酸2-羟基-3-苯氧基丙酯等(甲基)丙烯酸酯化合物。
[化4]
通式(IV)中,R1与上述所用相同,R5表示苯基、腈基、-Si(OR6)3(R6表示碳数1~6的烷基)或下述式所示的1价基团。
[化5]
在此,R7、R8及R9分别独立地表示氢或碳数1~6的烷基,R10表示氢或碳数1~6的烷基或苯基,m表示0、1、2或3的数值。
作为通式(IV)所示的(甲基)丙烯酰基化合物,可优选列举(甲基)丙烯酸苄酯、(甲基)丙烯酸2-氰基乙酯、γ-(甲基)丙烯酰氧基丙基三甲氧基硅烷、(甲基)丙烯酸缩水甘油酯、(甲基)丙烯酸四氢糠基酯、(甲基)丙烯酸四氢吡喃基酯、(甲基)丙烯酸二甲氨基乙酯、(甲基)丙烯酸二乙氨基乙酯、(甲基)丙烯酸1,2,2,6,6-五甲基哌啶基酯、(甲基)丙烯酸2,2,6,6-四甲基哌啶基酯、(甲基)丙烯酰氧基乙基磷酸酯、(甲基)丙烯酰氧基乙基苯基酸性磷酸酯、β-(甲基)丙烯酰氧基乙基邻苯二甲酸氢酯、β-(甲基)丙烯酰氧基乙基琥珀酸氢酯等(甲基)丙烯酸酯化合物。
[化6]
通式(V)中,R1及R2分别与上述所用相同。
作为通式(V)所示的化合物,可优选列举乙二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二聚醇二(甲基)丙烯酸酯、二羟甲基三环癸烷二(甲基)丙烯酸酯等二(甲基)丙烯酸酯化合物。
[化7]
通式(VI)中,R1、R3及n分别与上述所用相同。其中,在R3为氢或甲基时,n不为1。
作为通式(VI)所示的化合物,可优选列举二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯等二(甲基)丙烯酸酯化合物。
[化8]
通式(VII)中,R1与上述所用相同,R11及R12分别独立地表示氢或甲基。
作为通式(VII)所示的化合物,可优选列举使1摩尔的双酚A、双酚F或双酚AD与2摩尔的(甲基)丙烯酸缩水甘油酯反应而得的二(甲基)丙烯酸酯化合物。
[化9]
通式(VIII)中,R1、R11及R12分别与上述所用相同,R13及R14分别独立地表示氢或甲基,p及q分别独立地表示1~20的整数。
作为通式(VIII)所示的化合物,可优选列举双酚A、双酚F或双酚AD的聚环氧乙烷加成物的二(甲基)丙烯酸酯化合物。
[化10]
通式(IX)中,R1表示上述的基团,R15、R16、R17及R18分别独立地表示氢或甲基,x表示1~20的整数。
作为通式(IX)所示的化合物,可优选列举双((甲基)丙烯酰氧基丙基)聚二甲基硅氧烷、双((甲基)丙烯酰氧基丙基)甲基硅氧烷-二甲基硅氧烷共聚物等二(甲基)丙烯酸酯化合物。
[化11]
通式(X)中,R1表示上述的基团,r、s、t及u分别独立地为表示重复数的平均值的、0以上的数值,r+t为0.1以上、优选为0.3~5,s+u为1以上、优选为1~100。
作为通式(X)所示的化合物,包括使加成有马来酸酐的聚丁二烯与(甲基)丙烯酸2-羟乙酯反应而得的反应物及其氢化物,例如包括MM-1000-80、MAC-1000-80(均为日本石油化学(株)的商品名)等。
在本发明中,作为(A)(甲基)丙烯酰基化合物,可以将上述的化合物、优选上述的(甲基)丙烯酸酯化合物单独使用或组合使用多种。
在本发明中,对于(A)(甲基)丙烯酰基化合物而言,若组合使用特定的(F)银粉和(G)铝粉,则可以得到导电性、粘接性、导热性优异并且涂布操作性、机械特性也优异、能够适合用作芯片焊接用途的树脂糊剂组合物,从这一点出发,优选如上所述的(甲基)丙烯酸酯化合物。
作为(B)粘合剂树脂,可优选列举环氧树脂、硅酮树脂、聚氨酯树脂、丙烯酸类树脂等树脂。在这些树脂中,从与上述的(A)(甲基)丙烯酰基化合物的组合的观点出发,优选环氧树脂。
作为环氧树脂,优选在1分子中具有2个以上的环氧基的化合物。作为此种环氧树脂,可优选列举例如双酚A型环氧树脂[AER-X8501(旭化成工业(株)、商品名)、R-301(YukaShell Epoxy Co.Ltd.、商品名)、YL-980(Yuka Shell Epoxy Co.Ltd.、商品名)]、双酚F型环氧树脂[YDF-170(东都化成(株)、商品名)]、双酚AD型环氧树脂[R-1710(三井化学(株)、商品名)]、苯酚线型酚醛型环氧树脂[N-730S(DIC(株)、商品名)、Quatrex-2010(陶氏化学公司、商品名)]、甲酚线型酚醛型环氧树脂[YDCN-702S(东都化成(株)、商品名)、EOCN-100(日本化药(株)、商品名)]、多官能环氧树脂[EPPN-501(日本化药(株)、商品名)、TACTIX-742(陶氏化学公司、商品名)、VG-3010(三井化学(株)、商品名)、1032S(Yuka Shell EpoxyCo.Ltd.、商品名)]、具有萘骨架的环氧树脂[HP-4032(DIC(株)、商品名)]、脂环式环氧树脂[CEL-3000(大赛璐(株)、商品名)]、环氧化聚丁二烯[PB-3600(大赛璐(株)、商品名)、E-1000-6.5(日本石油化学(株)、商品名)]、胺型环氧树脂[ELM-100(住友化学(株)、商品名)、YH-434L(东都化成(株)、商品名)]、间苯二酚型环氧树脂[DENACOL EX-201(长濑化成工业(株)、商品名)]、新戊二醇型环氧树脂[DENACOL DEX-211(长濑化成工业(株)、商品名)]、己二醇型环氧树脂[Nagase CEX-212(长濑化成工业(株)、商品名)]、乙二醇-丙二醇型环氧树脂[Nagase CEX-810、811、850、851、821、830、832、841、861(长濑化成工业(株)、商品名)]、下述通式(XI)所示的环氧树脂[E-XL-24、E-XL-3L(三井化学(株)、商品名)]等。
[化12]
通式(XI)中,v表示0~5的整数。
在这些环氧树脂中,优选双酚F型环氧树脂、环氧化聚丁二烯、线型酚醛型环氧树脂。其原因在于:若使用这些树脂作为粘合剂树脂,则可以得到导电性、粘接性、导热性优异并且涂布操作性、机械特性也优异、能够适合用作芯片焊接用途的树脂糊剂组合物。此外,这些环氧树脂可以单独使用1种,也可以组合使用2种以上。
(B)粘合剂树脂、尤其环氧树脂的分子量或数均分子量优选为160~3000。数均分子量是通过凝胶渗透色谱并利用标准聚苯乙烯的标准曲线测定(以下称作GPC法)得到的值。若(B)粘合剂树脂的分子量或数均分子量为160以上,则具有优异的粘接性,若(B)粘合剂树脂的分子量或数均分子量为3000以下,则树脂糊剂组合物的粘度不会过度上升,可以得到良好的操作性。
环氧当量优选为80~1000,更优选为100~500。若(B)粘合剂树脂的环氧当量为80以上,则具有优异的粘接性,若(B)粘合剂树脂的环氧当量为1000以下,则在树脂糊剂组合物的固化时会因未反应固化物残留而使得在固化后的热历程中能够抑制漏气(outgas)的发生,故优选。
此外,树脂糊剂组合物中的(B)粘合剂树脂的含量优选为0.1~2.0质量%,更优选为0.5~1.5质量%。若(B)粘合剂树脂的含量为0.1质量%以上,则具有优异的粘接性,若(B)粘合剂树脂的含量为2.0质量%以下,则树脂糊剂组合物的粘度不会过度上升,可以得到良好的操作性。
此外,作为环氧树脂,可以包含在1分子中具有1个环氧基的化合物、单官能环氧化合物(反应性稀释剂)。作为此种单官能环氧化合物,可列举苯基缩水甘油基醚(PGE、日本化药(株)、商品名)、烷基苯酚单缩水甘油基醚(PP-101、东都化成(株)、商品名)、脂肪族单缩水甘油基醚(ED-502、(株)ADEKA、商品名)、烷基苯酚单缩水甘油基醚(ED-509、(株)ADEKA、商品名)、烷基苯酚单缩水甘油基醚(YED-122、Yuka-Shell Epoxy Co.Ltd.、商品名)、3-环氧丙氧基丙基三甲氧基硅烷(KBM-403、信越化学工业(株)、商品名)、3-环氧丙氧基丙基三甲氧基硅烷、3-环氧丙氧基丙基甲基二甲氧基硅烷、1-(3-环氧丙氧基丙基)-1,1,3,3,3-五甲基二硅氧烷(TSL-8350、TSL-8355、TSL-9905(Toshiba Silicone(株)、商品名)等。
单官能环氧化合物在不阻碍本发明的树脂糊剂组合物的特性的范围内使用,在(B)粘合剂树脂总量中,优选以10质量%以下的量来使用,更优选以1~5质量%的量来使用。若单官能环氧化合物的使用量为10质量%以下,则树脂糊剂组合物的粘度不会过度上升,可以得到良好的操作性。
在上述的(B)粘合剂树脂为环氧树脂的情况下,(C)胺化合物是具有作为环氧树脂的固化剂的功能的化合物,可优选列举双氰胺、以下的通式(XII)所示的二元酸二酰肼[ADH、PDH、SDH(均为JAPAN FINECHEM(株)、商品名)](通式(XII)中,R19表示间亚苯基、对亚苯基等2价芳香族基、碳数2~12的直链或支链的亚烷基。)、包含环氧树脂与胺化合物的反应物的微胶囊型固化剂[Novacure(旭化成工业(株)、商品名)]、二氨基二苯基甲烷、间苯二胺、间苯二甲胺、二氨基二苯基砜、脲、脲衍生物、三聚氰胺等多胺化合物。
[化13]
此外,作为(C)胺化合物,还可优选列举2-甲基咪唑、2-乙基-4-甲基咪唑、1-苄基-2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基-5-羟甲基咪唑等咪唑化合物。这些(C)胺化合物可以单独使用1种,也可以组合使用2种以上。
(C)胺化合物的配合量相对于树脂糊剂组合物优选为0.05~0.3质量%,更优选为0.07~0.15质量%。若(C)胺化合物的配合量为0.05质量%以上,则不会使固化性变差,若(C)胺化合物的配合量为0.3质量%以下,则使树脂糊剂组合物的稳定性变得良好。
(D)聚合引发剂是为了促进本发明的树脂糊剂组合物的固化而使用的物质,优选自由基聚合引发剂。作为自由基聚合引发剂,从抑制孔隙的生成的观点出发,优选过氧化物系的自由基聚合引发剂,此外,从树脂糊剂组合物的固化性及粘度稳定性的方面出发,优选在急速加热试验中的分解温度为70~170℃的聚合引发剂。
作为自由基聚合引发剂,可优选列举1,1,3,3-四甲基过氧化-2-乙基己酸酯、1,1-双(叔丁基过氧化)环己烷、1,1-双(叔丁基过氧化)环十二烷、过氧化间苯二甲酸二叔丁酯、过氧化苯甲酸叔丁酯、过氧化二枯基、过氧化叔丁基枯基、2,5-二甲基-2,5-二(叔丁基过氧化)己烷、2,5-二甲基-2,5-二(叔丁基过氧化)己炔、枯基过氧化氢等过氧化物系自由基聚合引发剂。
(D)聚合引发剂的配合量相对于树脂糊剂组合物优选为0.1~5质量%,更优选为0.6~1.5质量%。若该配合量为0.1质量%以上,则固化性不会降低,若该配合量为5质量%以下,则挥发成分不会变多,在固化物中不易产生被称作孔隙的空隙。
(E)可挠化剂是为了对本发明的树脂糊剂组合物的固化物赋予可挠性而使用的物质。作为可挠化剂,可优选列举橡胶成分、热塑性树脂。
作为橡胶成分,优选具有丁二烯的骨架的丁二烯系橡胶。作为丁二烯系橡胶,可优选列举环氧化聚丁二烯橡胶、马来酸酐化(maleinization)聚丁二烯、丙烯腈丁二烯橡胶、羧基末端丙烯腈丁二烯橡胶、氨基末端丙烯腈丁二烯橡胶、乙烯基末端丙烯腈丁二烯橡胶、苯乙烯丁二烯橡胶等液状橡胶等。
作为橡胶成分,优选数均分子量为500~10,000的橡胶成分,更优选数均分子量为1,000~5,000的橡胶成分。若分子量为500以上,则可以得到良好的可挠化效果,若分子量为10,000以下,则树脂糊剂组合物的粘度不会上升,可以得到树脂糊剂组合物的良好操作性。数均分子量是利用蒸气压渗透法测得的值或利用GPC法测得的值。
(E)可挠化剂的配合量优选相对于树脂糊剂组合物为1~10质量%,更优选为2~6质量%。若该配合量为1质量份以上,则可以得到良好的可挠化效果,若该配合量为10质量%以下,则粘度不会增大,可以得到树脂糊剂组合物的良好操作性。
(F)银粉是为了对本发明的树脂糊剂组合物赋予导电性或导热性而使用的成分。在本发明中,树脂糊剂组合物中的(F)银粉的含量为40质量%以下,该(F)银粉含有振实密度为2.5g/cm3以下的第1银粉,并且以树脂糊剂组合物中的该第1银粉的含量为5质量%以上作为必要的条件。此外,后述的(G)铝粉与该(F)银粉的质量比((G)铝粉/(F)银粉)为0.8~3.5也是必要条件。
作为在本发明中使用的(F)银粉,优选平均粒径为1~10μm的银粉,更优选平均粒径为2~8μm的银粉,进一步优选平均粒径为3~6μm的银粉。若(F)银粉的平均粒径为上述范围内,则树脂糊剂组合物中的银粉难以沉降,在分配树脂糊剂组合物时不会在针(needle)中产生堵塞,故优选。另外,(F)银粉的平均粒径是利用激光衍射法测得的值。
(F)银粉至少包含振实密度为2.5g/cm3以下的第1银粉。若振实密度为2.5g/cm3以下,则可以得到优异的导电度,并且树脂糊剂组合物的粘度不会过度上升,可以得到良好的涂布操作性。基于同样的理由,银粉的振实密度优选为0.5~2.5g/cm3的范围。在此,(F)银粉的振实密度是依据JIS Z 2512并利用振实密度测定器进行测定而得到的值。具体而言,称取银粉100g,利用漏斗使其平稳地落入100ml量筒中。将量筒载置于振实密度测定器上,以落下距离20mm、60次/分钟的速度落下600次,测定经压缩的银粉的容积。(F)银粉的振实密度是将样品量除以经压缩的银粉的容积而算出的值。
在本发明中,(F)银粉可以仅由第1银粉构成,若树脂糊剂组合物中的第1银粉的含量为5质量%以上,则可以是与振实密度超过2.5g/cm3的银粉混合的混合物。此外,第1银粉可以由振实密度为2.5g/cm3以下的多种不同种类的银粉构成。
树脂糊剂组合物中的第1银粉的含量需要为5质量%以上,优选为7.5质量%以上。此外,优选的上限值与(F)银粉的含量相同,即(F)银粉优选仅由第1银粉构成。
(F)银粉的BET比表面积优选为0.5~2m2/g。在此,(F)银粉的比表面积是利用BET法N2气吸附单点法测得的值。若(F)银粉的BET比表面积为上述范围内,则树脂糊剂组合物的粘度不会过度上升,并且具有优异的导电性,故优选。
作为(F)银粉的形状,可优选列举粒状、薄片状、球状、针状、不规则状等,其中,优选薄片状。(F)银粉的形状为薄片状、不规则状时,以其外接球的直径作为平均粒径。
(F)银粉的含量需要相对于树脂糊剂组合物为40质量%以下,优选为3~40质量%,更优选为10~35质量%。若(F)银粉的含量为上述范围内,则可以得到导电性、导热性及粘接性优异且涂布操作性、机械特性也优异的廉价的树脂糊剂组合物。
(G)铝粉是为了对本发明的树脂糊剂组合物赋予导电性或导热性而使用的成分,以往单独使用作为稀有价值高且昂贵的材料的银粉,通过将其一部分替代成(G)铝粉,不论是否降低银粉的使用量,均可得到导电性、导热性及粘接性优异且涂布操作性、机械特性也优异的廉价的树脂糊剂组合物。
作为在本发明中使用的(G)铝粉,优选平均粒径为1~6μm的铝粉,更优选平均粒径为2~5μm的铝粉,进一步优选平均粒径为2~4μm的铝粉。若(G)铝粉的平均粒径为上述范围内,则树脂糊剂组合物的润湿扩展性不会降低,因此不会产生半导体芯片的倾斜。另外,(G)铝粉的平均粒径是利用激光衍射法测得的值。
(G)铝粉的表观密度优选为0.40~1.20g/cm3,更优选为0.55~1.00g/cm3。
此外,作为(G)铝粉的形状,可优选列举粒状、薄片状、球状、针状、不规则状等,其中,优选粒状、薄片状。在(G)铝粉的形状为薄片状、不规则状时,以其外接球的直径作为平均粒径。
(G)铝粉/(F)银粉的质量比需要为0.8~3.5,优选为1.0~3.0。若该质量比小于0.8,则导热性降低,若该质量比超过3.5,则粘接性降低,有时使操作性、涂布操作性降低。
本发明的树脂糊剂组合物优选进一步包含(H)偶联剂。通过使用(H)偶联剂,从而使对引线框的粘接性提高。
作为(H)偶联剂,并无特别限制,可优选列举例如硅烷偶联剂、钛酸酯系偶联剂、铝系偶联剂、锆酸酯系偶联剂、铝锆酸酯系偶联剂等各种偶联剂。
作为(H)偶联剂的具体例,可优选列举:甲基三甲氧基硅烷、甲基三乙氧基硅烷、苯基三甲氧基硅烷、苯基三乙氧基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、乙烯基三乙酰氧基硅烷、乙烯基-三(2-甲氧基乙氧基)硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基甲基二甲氧基硅烷、甲基三(甲基丙烯酰氧基乙氧基)硅烷、γ-丙烯酰氧基丙基三甲氧基硅烷、γ-氨基丙基三甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、N-β-(氨基乙基)-γ-氨基丙基三甲氧基硅烷、N-β-(氨基乙基)-γ-氨基丙基甲基二甲氧基硅烷、N-β-(N-乙烯基苄基氨基乙基)-γ-氨基丙基三甲氧基硅烷、γ-苯胺基丙基三甲氧基硅烷、γ-脲丙基三甲氧基硅烷、γ-脲丙基三乙氧基硅烷、3-(4,5-二氢咪唑基)丙基三乙氧基硅烷、β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷、γ-环氧丙氧基丙基甲基二异丙烯氧基硅烷、甲基三环氧丙氧基硅烷、γ-巯基丙基三甲氧基硅烷、γ-巯基丙基三乙氧基硅烷、γ-巯基丙基甲基二甲氧基硅烷、三甲基甲硅烷基异氰酸酯、二甲基甲硅烷基异氰酸酯、苯基甲硅烷基三异氰酸酯、四异氰酸酯硅烷、甲基甲硅烷基三异氰酸酯、乙烯基甲硅烷基三异氰酸酯、乙氧基硅烷三异氰酸酯等硅烷偶联剂;异丙基三(异硬脂酰基)钛酸酯、异丙基三(十二烷基苯磺酰基)钛酸酯、异丙基三(二辛基焦磷酸酰氧基)钛酸酯、四异丙基双(二辛基亚磷酸酰氧基)钛酸酯、四辛基双(二(十三烷基)亚磷酸酰氧基)钛酸酯、四(2,2-二烯丙氧基甲基-1-丁基)双(二-十三烷基)亚磷酸酰氧基钛酸酯、双(二辛基焦磷酸酰氧基)氧基乙酰氧基钛酸酯、双(二辛基焦磷酸酰氧基)乙撑钛酸酯、异丙基三辛酰基钛酸酯、异丙基二甲基丙烯酰基异硬脂酰基钛酸酯、异丙基(二辛基磷酸酰氧基)钛酸酯、异丙基三枯基苯基钛酸酯、异丙基三(N-氨基乙基·氨基乙基)钛酸酯、二枯基苯基氧基乙酰氧基钛酸酯、二异硬脂酰基乙撑钛酸酯等钛酸酯系偶联剂;乙酰烷氧基铝二异丙酸酯等铝系偶联剂;四丙基锆酸酯、四丁基锆酸酯、四(三乙醇胺)锆酸酯、四异丙基锆酸酯、乙酰丙酮锆、乙酰丙酮锆丁酸酯、硬脂酸锆丁酸酯等锆酸酯系偶联剂等。
在上述偶联剂中,γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等是作为能够用作环氧树脂的单官能环氧化合物(反应性稀释剂)所列举的化合物,这些化合物具有两者的功能,因此也是作为硅烷偶联剂所例示的化合物。
(H)偶联剂的配合量相对于树脂糊剂组合物优选为0.5~6.0质量%,特别优选为1.0~5质量%。若该配合比例为0.5质量%以上,则可以得到粘接强度的提高效果,若该配合比例为6质量%以下,则挥发成分不会变多,在固化物中不易产生被称作孔隙的空隙。
在本发明的树脂糊剂组合物中可以根据需要单独或组合多种地进一步适当添加:氧化钙、氧化镁等吸湿剂;氟系表面活性剂;非离子系表面活性剂;高级脂肪酸等润湿促进剂;硅油等消泡剂;无机离子交换体等离子捕获剂等各种添加剂。
本发明的树脂糊剂组合物例如可以按照以下方式获得。准备构成本发明的树脂糊剂的(A)~(G)的各成分及根据需要添加的各种添加剂,将这些物质一次性或分批地投入到搅拌机、复合式混合机(hybrid mixer)、行星式混合机等能够进行分散、搅拌、混炼的装置中,根据需要进行加热,并进行混合、溶解、解粒混炼或分散,制成均匀的糊剂状,得到树脂糊剂组合物。
所得的树脂糊剂组合物为降低作为稀有价值高且昂贵的材料的银的使用量、同时导电性、导热性及粘接性优异并且涂布操作性、机械特性也优异的廉价的树脂糊剂组合物,因此可以用作导体元件粘接用途。更具体而言,可以适合用于半导体芯片等导体元件与引线框等支撑构件的粘接。
〔半导体装置〕
本发明的半导体装置,其特征在于,其是将半导体元件和支撑构件利用上述的本发明的导体元件粘接用树脂糊剂组合物的固化物接合、并且利用密封剂将该半导体元件和该支撑构件的一部分密封而成的。
作为支撑构件,例如可列举:铜引线框等引线框;玻璃环氧树脂基板(由玻璃纤维强化环氧树脂构成的基板)、BT基板(使用由氰酸酯单体及其低聚物和双马来酰亚胺构成的BT树脂的基板)等有机基板。
本发明的半导体装置利用本发明的树脂糊剂组合物的固化物将半导体元件和支撑构件接合。在将半导体元件粘接于引线框等支撑构件时,例如可以在利用分配法在该支撑构件上涂布树脂糊剂组合物后,对半导体元件进行压接,之后使用烘箱或加热块等加热装置进行加热固化。接着,经过引线接合(wire bonding)工序等后,通过通常的方法,即使用密封剂将该半导体元件和该支撑构件的至少一部分密封,由此得到本发明的半导体装置。
树脂糊剂组合物的加热固化根据在低温下的长时间固化的情况或在高温下的快速固化的情况而有所不同,通常在温度150~220℃、优选180~200℃进行30秒~2小时、优选1小时~1小时30分钟的加热固化。
实施例
以下,利用实施例对本发明进行更具体地说明,但本发明并不受这些实施例的任何限定。
(评价方法)
(1)粘度(粘度的稳定性)的测定及涂布操作性的评价:
a)粘度的测定
使用EHD型旋转粘度计(东京计器(株)制、锥角3°)测定各实施例及比较例的树脂糊剂组合物在25℃、0.5rpm的条件下经时3分钟后的粘度(Pa·s)。
b)粘度的稳定性
将上述a)中测得的粘度作为初始值,将取样时间设为1天、3天、7天,使用EHD型旋转粘度计(东京计器(株)制、锥角3°)测定在25℃、0.5rpm条件下经时3分钟后的粘度(Pa·s),确认粘度的稳定性。
c)涂布操作性的评价
利用分配器(Musashi Engineering(株)制)进行连续打点时,以目视确认打点与打点之间的状态,并按照以下的基准进行了评价。
○完全未确认到牵丝。
△虽然确认到极少的牵丝,但是在实用上没有问题。
×确认到牵丝。
(2)剪切粘接强度的测定
在带Ni/Au镀层的铜架、带Ag镀环的铜引线框及带Ag镀点的铜引线框上涂布约0.5mg各实施例及比较例的树脂糊剂组合物,在其上压接2mm×2mm的Si芯片(厚度为约0.4mm),再利用烘箱用30分钟升温至180℃,并使其在180℃下固化1小时。对其使用自动粘接力试验装置(BT4000、Dage公司制)测定在260℃保持20秒时的剪切粘接强度(MPa)。另外,剪切粘接强度的测定对10个试验片进行,将其平均值设为剪切粘接强度(MPa)。
(3)体积电阻率的测定
如图2的(a)那样在载玻片(东京硝子器机(株)制、尺寸:76×26mm、厚度:0.9~1.2mm)贴附纸胶带(日东电工CS系统(株)制、No.7210F、尺寸宽度:18mm、厚度:0.10mm),在约2mm的槽中放置树脂糊剂组合物(图2的(b)),使其在载玻片上平展开(图2的(c)),再利用烘箱以180℃使其固化1小时,制成固化物,得到体积电阻率的测定用试样(图2的(d))。使用数字万用表(TR6846、ADVANTEST公司制)对该固化物测定体积电阻率(Ω·cm)。
(4)导热率的测定
对于与上述(3)同样操作得到的固化物,利用激光闪光法在下述的条件下测定比热、比重及热扩散率。
比热测定装置:使用差示扫描量热计(Parking-Elmer公司制DSC),在温度:25℃的条件下测定了比热。
比重测定装置:使用密度计(ALFA MIRAGE制密度计)在室温(阿基米德法)下测定了比重。
热扩散率:使用氙灯闪光分析仪(LFA447、NETZSCH公司制)在温度:25℃的条件下测定了热扩散率。
(5)振实密度的测定
银粉的振实密度是依据JIS Z 2512并利用振实密度测定器进行测定而得到的值。具体而言,称取银粉100g,利用漏斗使其平稳地落入100ml量筒中。将量筒载置于振实密度测定器上,以落下距离20mm、60次/分钟的速度落下600次,测定经压缩的银粉的容积。银粉的振实密度是样品量除以经压缩的银粉的容积而算出的值。
(6)平均粒径的测定
利用微量刮勺(micro spatula)将银粉取至1~2杯烧杯中,加入约60ml异丙醇,利用超声波均质器使其分散1分钟。将其利用激光衍射式粒度分析计以测定时间30秒连续测定2次,将50%累积径的平均值设定为平均粒径。
实施例1~10、比较例1~6、参考例1
按照表1及表2所示的配合比例混合各材料,使用行星式混合机进行混炼后,在666.61Pa(5托(Torr))以下进行10分钟的脱泡处理,得到树脂糊剂组合物。利用上述所示的方法对所得的树脂糊剂组合物的特性(粘度及粘度稳定性、芯片剪切粘接强度、体积电阻率)进行了调查。将其结果示于表1。
[表1]
[表2]
表1及表2中的简写符号如下所示。
(1)(A)(甲基)丙烯酰基化合物((甲基)丙烯酸酯化合物)
SR-349(Sartomer公司制乙氧基化双酚A二丙烯酸酯的制品名)
FA-512AS(日立化成(株)制丙烯酸二环戊烯氧基乙酯的制品名)
FA-512M(日立化成(株)制甲基丙烯酸二环戊烯氧基乙酯的制品名)
FA-513AS(日立化成(株)制丙烯酸二环戊酯的制品名)
FA-513M(日立化成(株)制甲基丙烯酸二环戊酯的制品名)
(2)(B)粘合剂树脂
N-665-EXP(DIC(株)制甲酚线型酚醛型环氧树脂的制品名、环氧当量:198~208)
(3)(C)胺化合物
Dicy(日本环氧树脂(株)制、双氰胺的制品名)
(4)(D)聚合引发剂
Trigonox 22-70E(Kayaku Akzo(株)制、1,1-双(叔丁基过氧化)环己烷、10小时半衰期温度:91℃)
(5)(E)可挠化剂
Epolead PB-4700(大赛璐(株)制、环氧化聚丁二烯的商品名、环氧当量:152.4~177.8、数均分子量=3500)
(6)(F)银粉
AgC-212DH(福田金属箔粉工业(株)制、形状:薄片状、平均粒径:2.9μm、振实密度:4.75g/cm3、比表面积:1.00m2/g)
TC-106(德力本店(株)制、形状:薄片状、平均粒径:7.0μm、振实密度:1.90g/cm3、比表面积:1.10m2/g)
TC-108(德力本店(株)制、形状:薄片状、平均粒径:7.0μm、振实密度:2.00g/cm3、比表面积:1.50m2/g)
AgC-A(福田金属箔粉工业(株)制、形状:薄片状、平均粒径:5.0μm、振实密度:2.70~3.90g/cm3、比表面积:0.55~0.90m2/g)
(7)(G)铝粉
No.800F(Minalco(株)制的铝粉的制品名、形状:粒状、平均粒径:3.0~3.6μm、表观密度:0.6~1.0g/cm3)
No.900F(Minalco(株)制的铝粉的制品名、形状:粒状、平均粒径:2.0~2.6μm、表观密度:0.6~1.0g/cm3)
另外,将所使用的铝粉的表示各粒子外观的电子显微镜照片示于图1。
(8)(H)偶联剂
KBM-403(信越化学工业(株)制、γ-环氧丙氧基丙基三甲氧基硅烷)
(9)其他金属粉
RD10-1220(东洋铝(株)制的镍粉的制品名、形状:薄片状、平均粒径:10~15μm)
20%Ag-Cu-MA(福田金属箔粉工业(株)制的涂银铜粉的制品名、形状:薄片状、平均粒径:7.4μm、振实密度:4.80g/cm3、比表面积:0.50m2/g)
SFR-Cu 5μm(Nippon Atomized Metal Powder(株)制的铜粉的制品名、形状:薄片状、平均粒径:5.5μm)
如表1及表2所示,可以确认:本发明的树脂糊剂组合物与以往的将银粉用于填料的树脂糊剂组合物(参考例1)相比,粘接强度为同等或同等以上,导电性、导热性、操作性均优异。此外,不含有振实密度为2.5g/cm3以下的银粉的比较例1及3的树脂糊剂组合物的体积电阻率极大,银粉/铝的质量比不在本申请发明的规定范围内的比较例2的树脂糊剂组合物的涂布操作性差,体积电阻率也差,并且含有除铝粉以外的金属粉的比较例4~6的树脂糊剂组合物的体积电阻率极大(比较例4)或导致凝胶化而无法成为糊剂组合物(比较例5及6)。
由此可以确认:根据本发明的树脂糊剂组合物,能够在不大量使用稀有价值高的银的情况下使粘接强度及体积电阻率等特性达到与以往的将银粉用于填料的树脂糊剂组合物同等以上的程度。
产业上的可利用性
根据本发明,可以得到一种廉价的树脂糊剂组合物及使用了该树脂糊剂组合物的半导体装置,所述树脂糊剂组合物适合用于半导体芯片等导体元件与引线框等支撑构件的粘接,能够降低作为稀有价值高且昂贵的材料的银的使用量,同时导电性、导热性及粘接性优异并且涂布操作性、机械特性也优异。
Claims (10)
1.一种导体元件粘接用树脂糊剂组合物,其为含有(A)(甲基)丙烯酰基化合物、(B)粘合剂树脂、(C)胺化合物、(D)聚合引发剂、(E)可挠化剂、(F)银粉及(G)铝粉的树脂糊剂组合物,该树脂糊剂组合物中的(F)银粉的含量为40质量%以下,该(G)铝粉/该(F)银粉的质量比为0.8~3.5,该(F)银粉含有振实密度为2.5g/cm3以下的第1银粉,并且该树脂糊剂组合物中的该第1银粉的含量为5质量%以上。
2.根据权利要求1所述的导体元件粘接用树脂糊剂组合物,其中,(F)银粉的形状为薄片状,且平均粒径为1~10μm。
3.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(G)铝粉的形状为粒状,且平均粒径为1~6μm。
4.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(A)(甲基)丙烯酰基化合物为(甲基)丙烯酸酯化合物。
5.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(B)粘合剂树脂为环氧树脂。
6.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(C)胺化合物为选自多胺化合物及咪唑化合物中的至少一种。
7.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(E)可挠化剂为橡胶成分。
8.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其还包含(H)偶联剂。
9.根据权利要求1或2所述的导体元件粘接用树脂糊剂组合物,其中,(G)铝粉/(F)银粉的质量比为1.0~3.0。
10.一种半导体装置,其是将半导体元件和支撑构件利用权利要求1~9中任一项所述的导体元件粘接用树脂糊剂组合物的固化物接合、并且利用密封剂将该半导体元件和该支撑构件的至少一部分密封而成的。
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CN102365690A (zh) * | 2009-03-31 | 2012-02-29 | 太阳控股株式会社 | 感光性导电糊剂及电极图案 |
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CN103237863B (zh) * | 2010-12-20 | 2015-07-08 | 施敏打硬株式会社 | 导电性粘接剂 |
WO2012124527A1 (ja) * | 2011-03-14 | 2012-09-20 | 日立化成工業株式会社 | 半導体素子接着用樹脂ペースト組成物及び半導体装置 |
JP2012236873A (ja) * | 2011-05-10 | 2012-12-06 | Hitachi Chemical Co Ltd | 樹脂ペースト組成物及び半導体装置 |
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