JP2020057699A - 半導体部品及びその製造方法 - Google Patents
半導体部品及びその製造方法 Download PDFInfo
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- JP2020057699A JP2020057699A JP2018187503A JP2018187503A JP2020057699A JP 2020057699 A JP2020057699 A JP 2020057699A JP 2018187503 A JP2018187503 A JP 2018187503A JP 2018187503 A JP2018187503 A JP 2018187503A JP 2020057699 A JP2020057699 A JP 2020057699A
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- RSVDRWTUCMTKBV-UHFFFAOYSA-N sbb057044 Chemical compound C12CC=CC2C2CC(OCCOC(=O)C=C)C1C2 RSVDRWTUCMTKBV-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- JIYXDFNAPHIAFH-UHFFFAOYSA-N tert-butyl 3-tert-butylperoxycarbonylbenzoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC(C(=O)OC(C)(C)C)=C1 JIYXDFNAPHIAFH-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Die Bonding (AREA)
Abstract
Description
本実施形態に係る半導体部品は、支持部材と、当該支持部材上に配置された半導体素子と、支持部材及び半導体素子の間に配置された接着剤層と、を備える。本実施形態に係る半導体部品では、半導体素子の側面において接着剤(接着剤層を形成するための接着剤)が半導体素子の上面側に伸びる現象(場合により、半導体素子の上面に樹脂組成物が達する現象。以下、「這い上がり現象(Creeping)」という)が抑制されている。本実施形態に係る半導体部品の製造方法は、這い上がり現象を抑制しつつ接着剤層を形成する工程を備える。接着剤層は、硬化性の接着剤(樹脂組成物等)又はその硬化物を含む。半導体素子は、接着剤層を介して支持部材上に搭載されている。接着剤層は、支持部材及び半導体素子に接している。本実施形態に係る半導体装置は、本実施形態に係る半導体部品を備える。
本実施形態に係る樹脂組成物は、半導体素子を支持部材に接着させるための樹脂組成物として用いることができる。本実施形態に係る樹脂組成物は、例えば硬化性(例えば熱硬化性)の組成物である。本実施形態に係る樹脂組成物は、ペースト状の樹脂組成物として用いることができる。本実施形態に係る硬化物は、本実施形態に係る樹脂組成物の硬化物である。
[式中、R1aは水素原子又はメチル基を表し、R1bは炭素数1〜100(好ましくは、炭素数1〜36の2価の脂肪族基、又は、環状構造を有する炭化水素基)を表す。]
[式中、R2aは水素原子又はメチル基を表し、R2bは炭素数1〜100(好ましくは、炭素数1〜36の2価の脂肪族基、又は、環状構造を有する炭化水素基)を表す。]
[式中、R3aは水素原子又はメチル基を表し、R3bは水素原子、メチル基又はフェノキシメチル基を表し、R3cは水素原子、炭素数1〜6のアルキル基、フェニル基又はベンゾイル基を表し、n3は1〜50の整数を表す。]
[式中、R4aは、水素原子又はメチル基を表し、R4bは、フェニル基、シアノ基、−Si(OR4c)3(R4cは炭素数1〜6のアルキル基を表す)、又は、下記式で表される1価の基を表し、n4は0〜3の整数を表す。]
[式中、R4d、R4e及びR4fは、それぞれ独立に水素原子又は炭素数1〜6のアルキル基を表し、R4gは、水素原子、炭素数1〜6のアルキル基、又は、フェニル基を表す。]
[式中、R5a及びR5bは、それぞれ独立に水素原子又はメチル基を表し、R5cは、炭素数1〜100(好ましくは、炭素数1〜36の2価の脂肪族基、又は、環状構造を有する炭化水素基)を表す。]
[式中、R6a及びR6bは、それぞれ独立に水素原子又はメチル基を表し、R6cは、水素原子、メチル基又はフェノキシメチル基を表し、n6は1〜50の整数を表す。但し、R6cが水素原子又はメチル基であるとき、n6は1ではない。]
[式中、R7a、R7b、R7c及びR7dは、それぞれ独立に水素原子又はメチル基を表す。]
[式中、R8a、R8b、R8c、R8d、R8e及びR8fは、それぞれ独立に水素原子又はメチル基を表し、n81及びn82は、それぞれ独立に1〜20の整数を表す。]
[式中、R9a、R9b、R9c、R9d、R9e及びR9fは、それぞれ独立に水素原子又はメチル基を表し、n9は1〜20の整数を表す。]
[式中、R10a及びR10bは、それぞれ独立に水素原子又はメチル基を表し、r、s、t及びuは、それぞれ独立に、繰り返し数の平均値を示す0以上の数であり、r+tは0.1以上(好ましくは0.3〜5)であり、s+uは1以上(好ましくは1〜100)である。]
[式中、n11は0〜5の整数を表す。]
[GPC条件]
ポンプ:日立 L−6000型(株式会社日立製作所製)
検出器:日立 L−3300 RI(株式会社日立製作所製)
カラム:Gelpack GL−R420+Gelpack GL−R430+Gelpack GL−R430(計3本)(日立化成株式会社製、商品名)
溶離液:THF
試料濃度:250mg/5mL
注入量:50μL
圧力:441Pa(45kgf/cm2)
流量:1.75mL/分
[式中、R12aは、m−フェニレン基、p−フェニレン基等の2価の芳香族基、炭素数2〜12の直鎖又は分岐鎖のアルキレン基を表す。]
(脂肪酸)
オレイン酸、ステアリン酸及びラウリン酸を用いた。
エスリームAD−374M(ポリアルキレングリコール誘導体、分散剤、日油株式会社製、商品名)
12−0086(東洋アルミニウム株式会社製、商品名、平均粒径:3.5〜4.2μm)
TC−204B(株式会社徳力化学研究所製、商品名、平均粒径:2.0〜4.0μm)
FA−512AS(ジシクロペンテニルオキシエチルアクリレート、日立化成株式会社製、商品名、下記式(C4−1)で表される化合物)
SR−349(EO変性ビスフェノールAジアクリレート、サートマー社製、商品名、下記式(C8−1)で表される化合物)
N−665−EXP(クレゾールノボラック型エポキシ樹脂、DIC株式会社製、商品名、エポキシ当量:198〜208)
トリゴノックス22−70E(1,1−ビス(tert−ブチルパーオキシ)シクロヘキサン、化薬アクゾ株式会社製、商品名)
Dicy(ジシアンジアミド、三菱化学株式会社製、商品名)
エポリードPB−4700(エポキシ化ポリブタジエン、株式会社ダイセル製、商品名、エポキシ当量:152.4〜177.8、数平均分子量:3500)
KBM−403(γ−グリシドキシプロピルトリメトキシシラン、信越化学工業株式会社製、商品名)
表1の各成分(配合量の単位:質量部)を混合した後、プラネタリーミキサー(プライミクス株式会社製、型番:T.K. HIVIS MIX 2P−06)を用いて混練した。次に、666.61Pa(5Torr)以下で10分間脱泡処理を行うことにより樹脂組成物を得た。
樹脂組成物を銀スポットめっき付き銅リードフレーム上に約6mg塗布して接着剤層を形成した後、7mm×7mmのシリコンチップ(厚さ:400μm)を接着剤層上に圧着(ダイボンディング)した。次に、オーブンで180℃まで30分で昇温した後、180℃で1時間加熱することにより樹脂組成物を硬化させて硬化物を得た。そして、シリコンチップの側面において樹脂組成物がシリコンチップの上面側に伸びる現象(這い上がり現象)の有無を目視で確認した。結果を表1に示す。図3及び図4は、シリコンチップの側面を示す写真である(図3(a):実施例1、図3(b):実施例2、図4(a):実施例3、図4(b):実施例4、図4(c):比較例1。実施例5の写真の掲載は省略する)。
Claims (2)
- 支持部材と、当該支持部材上に配置された半導体素子と、前記支持部材及び前記半導体素子の間に配置された接着剤層と、を備える半導体部品の製造方法であって、
前記半導体素子の側面において接着剤が前記半導体素子の上面側に伸びる現象を抑制しつつ前記接着剤層を形成する工程を備える、半導体部品の製造方法。 - 支持部材と、当該支持部材上に配置された半導体素子と、前記支持部材及び前記半導体素子の間に配置された接着剤層と、を備え、
前記半導体素子の側面において接着剤が前記半導体素子の上面側に伸びる現象が抑制されている、半導体部品。
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JPWO2018034234A1 (ja) * | 2016-08-19 | 2018-08-16 | 住友ベークライト株式会社 | ダイアタッチペーストおよび半導体装置 |
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JP2016108498A (ja) * | 2014-12-09 | 2016-06-20 | 京セラケミカル株式会社 | 導電性接着剤組成物及び半導体装置 |
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