JP6620457B2 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
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- JP6620457B2 JP6620457B2 JP2015159140A JP2015159140A JP6620457B2 JP 6620457 B2 JP6620457 B2 JP 6620457B2 JP 2015159140 A JP2015159140 A JP 2015159140A JP 2015159140 A JP2015159140 A JP 2015159140A JP 6620457 B2 JP6620457 B2 JP 6620457B2
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- 239000011342 resin composition Substances 0.000 title claims description 122
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- 229920000647 polyepoxide Polymers 0.000 claims description 178
- -1 phenol compound Chemical class 0.000 claims description 118
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 36
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 32
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 30
- 239000011256 inorganic filler Substances 0.000 claims description 29
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 29
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- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 8
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
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- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
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Description
本発明が解決しようとする課題は、粗度が低くても導体層に対し高い密着力(ピール強度)を示すとともに、低い誘電正接を示す絶縁層を達成し得る樹脂組成物を提供することである。
[1] (A)下記式(1)で表される構成単位を有する化合物、
(B)エポキシ樹脂、及び(C)硬化剤を含有する、樹脂組成物。
[2] (A)化合物の重量平均分子量が、8000〜100000である、[1]に記載の樹脂組成物。
[3] (A)化合物の末端がエステル基である[1]又は[2]に記載の樹脂組成物。
[4] R3が芳香族環を有する1価の炭化水素基を表す、[1]〜[3]のいずれかに記載の樹脂組成物。
[5] 樹脂組成物中の不揮発成分を100%とした場合の(A)化合物の含有量が、0.5質量%〜15質量%である[1]〜[4]のいずれかに記載の樹脂組成物。
[6] (B)エポキシ樹脂が、ビスフェノール型エポキシ樹脂、フッ素含有エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂及びこれらのエポキシ樹脂の混合物からなる群から選択される、1種または2種以上である、[1]〜[5]のいずれかに記載の樹脂組成物。
[7] (C)硬化剤が、フェノール系硬化剤、シアネートエステル系硬化剤及び活性エステル系硬化剤から選択される1種以上を含む[1]〜[6]のいずれかに記載の樹脂組成物。
[8] (C)硬化剤が、トリアジン構造含有フェノール系樹脂、トリアジン構造含有アルキルフェノール系樹脂、シアネートエステル系硬化剤及び活性エステル系硬化剤から選択される1種以上を含む、[1]〜[7]のいずれかに記載の樹脂組成物。
[9] さらに、(D)無機充填材を含む、[1]〜[8]のいずれかに記載の樹脂組成物。
[10] (D)無機充填材の平均粒子径が、0.01μm〜5μmである、[9]に記載の樹脂組成物。
[11] 樹脂組成物中の不揮発成分を100質量%とした場合の(D)無機充填材の含有量が30〜90質量%である、[9]又は[10]に記載の樹脂組成物。
[12] (D)無機充填材がシリカである、[9]〜[11]のいずれかに記載の樹脂組成物。
[13] プリント配線板の絶縁層用である[1]〜[12]のいずれかに記載の樹脂組成物。
[14] プリント配線板のビルドアップ層用である[1]〜[12]のいずれかに記載の樹脂組成物。
[15] [1]〜[14]のいずれかに記載の樹脂組成物を含有する、シート状積層材料。
[16] [1]〜[14]のいずれかに記載の樹脂組成物若しくは[15]に記載のシート状積層材料を熱硬化して得られた絶縁層を含む、プリント配線板。
[17] [16]に記載のプリント配線板を含む、半導体装置。
本発明の樹脂組成物は、(A)式(1)で表される構成単位を有する化合物、(B)エポキシ樹脂及び(C)硬化剤、を含有する。以下、本発明の樹脂組成物に含まれる各成分について詳細に説明する。
本発明の樹脂組成物は(A)式(1)で表される構成単位を有する化合物(以下、「(A)化合物」、「(A)成分」ともいう)を含有する。
−(R10−Z1)n−X’−(Z2−R11)m− (2)
(式中、R10およびR11は、それぞれ独立して炭素原子数1〜3のアルキレン基を表し、Z1及びZ2は、それぞれ独立して、−O−、−O−CO−、又は−CO−O−を表し、X’は2官能エポキシ化合物の骨格を表し、n及びmは、それぞれ独立して0又は1である。)
R3の1価の脂肪族炭化水素基としては、炭素原子数1〜20のアルキル基、炭素原子数1〜20のアルケニル基、炭素原子数1〜20のアルキニル基などが挙げられ、これらは直鎖であっても分岐していてもよい。1価の脂肪族炭化水素基としては、炭素原子数1〜10のアルキル基が好ましく、炭素原子数1〜6のアルキル基がより好ましい。
したがって樹脂組成物中の(A)成分の含有量は、好ましくは0.5〜15質量%、より好ましくは0.7〜10質量%、さらに好ましくは1.0〜7質量%である。
本発明の樹脂組成物は、(B)エポキシ樹脂(以下、「(B)成分」ともいう)を含有する。
したがって樹脂組成物中の(B)成分の含有量は、好ましくは0.1〜30質量%、より好ましくは5〜25質量%、さらに好ましくは10〜22質量%である。
本発明の樹脂組成物は(C)硬化剤(以下「(C)成分」という)を含む。
(C)硬化剤としては、エポキシ樹脂を硬化する機能を有する限り特に限定されないが、例えば、フェノール系硬化剤、ナフトール系硬化剤、活性エステル系硬化剤、ベンゾオキサジン系硬化剤、シアネートエステル系硬化剤及びカルボジイミド系硬化剤が挙げられる。硬化剤は1種単独で用いてもよく、又は2種以上を併用してもよい。
したがって樹脂組成物中の(C)成分の含有量は、好ましくは0.1〜30質量%、より好ましくは1〜25質量%、さらに好ましくは5〜20質量%である。
本発明の樹脂組成物は、(D)無機充填材(以下、「(D)成分」ともいう)を含有していてもよい。
無機充填材の材料は特に限定されないが、例えば、シリカ、アルミナ、ガラス、コーディエライト、シリコン酸化物、硫酸バリウム、炭酸バリウム、タルク、クレー、雲母粉、酸化亜鉛、ハイドロタルサイト、ベーマイト、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、酸化マグネシウム、窒化ホウ素、窒化アルミニウム、窒化マンガン、ホウ酸アルミニウム、炭酸ストロンチウム、チタン酸ストロンチウム、チタン酸カルシウム、チタン酸マグネシウム、チタン酸ビスマス、酸化チタン、酸化ジルコニウム、チタン酸バリウム、チタン酸ジルコン酸バリウム、ジルコン酸バリウム、ジルコン酸カルシウム、リン酸ジルコニウム、及びリン酸タングステン酸ジルコニウム等が挙げられる。これらの中でもシリカが特に好適である。またシリカとしては球状シリカが好ましい。無機充填材は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。無機充填材の市販品としては、例えば(株)アドマテックス製「SO−C2」、「SO−C1」等が挙げられる。
熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリオレフィン樹脂、ポリブタジエン樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルイミド樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、ポリフェニレンエーテル樹脂、ポリカーボネート樹脂、ポリエーテルエーテルケトン樹脂、ポリエステル樹脂等の熱可塑性樹脂が挙げられ、これらのうち、フェノキシ樹脂が好ましい。熱可塑性樹脂は、1種単独で用いてもよく、又は2種以上を組み合わせて用いてもよい。
フェノキシ樹脂を使用する場合、フェノキシ樹脂のエポキシ当量は、好ましくは6000〜30000、より好ましくは7000〜20000、さらに好ましくは9000〜15000である。また当該フェノキシ樹脂のポリスチレン換算の重量平均分子量は8,000〜200,000の範囲が好ましく、10,000〜100,000の範囲がより好ましく、20,000〜60,000の範囲がさらに好ましい。
硬化促進剤としては、例えば、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、グアニジン系硬化促進剤等が挙げられ、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤が好ましく、アミン系硬化促進剤、イミダゾール系硬化促進剤がより好ましい。硬化促進剤は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
本発明の樹脂組成物は、難燃剤を含んでもよい。難燃剤としては、例えば、有機リン系難燃剤、有機系窒素含有リン化合物、窒素化合物、シリコーン系難燃剤、金属水酸化物等が挙げられる。難燃剤は1種単独で用いてもよく、又は2種以上を併用してもよい。
樹脂組成物は、さらに有機充填材を含んでもよい。有機充填材としては、プリント配線板の絶縁層を形成するに際し使用し得る任意の有機充填材を使用してよく、例えば、ゴム粒子、ポリアミド微粒子、シリコーン粒子等が挙げられ、ゴム粒子が好ましい。
本発明のシート状積層材料は、本発明の樹脂組成物を含有する。シート状積層材料としては、接着フィルムおよびプリプレグが挙げられる。
(接着フィルム)
接着フィルムは、本発明の樹脂組成物を含有する。接着フィルムは、例えば、支持体と、該支持体上に設けられた、本発明の樹脂組成物を含む樹脂組成物層と、を有する。
プリプレグは、本発明の樹脂組成物を含む。プリプレグにおいて、本発明の樹脂組成物は、シート状繊維基材中に含浸されていることを特徴とする。
本発明のプリント配線板は、本発明の樹脂組成物または本発明のシート状積層材料を熱硬化して得られた絶縁層を含む。
(I)内層基板上に、接着フィルムを、該接着フィルムの樹脂組成物層が内層基板と接合するように積層する工程
(II)樹脂組成物層を熱硬化して絶縁層を形成する工程
本発明の半導体装置は、プリント配線板を含むことを特徴とする。本発明の半導体装置は、本発明のプリント配線板を用いて製造することができる。
温度計、滴下ロート、冷却管、分留管、撹拌器を取り付けたフラスコにベンゾイルクロリド281.1g(酸クロリド基のモル数:2.0モル)とメチルイソブチルケトン(MIBK)1200gを仕込み、系内を減圧窒素置換し混合した。次いで、ビスフェノールアセトフェノン290g(フェノール性水酸基のモル数:2.0モル)を仕込み、系内を減圧窒素置換し溶解させた。その後、テトラブチルアンモニウムブロマイド1.1gを溶解させ、窒素ガスパージを施しながら、系内を60℃以下に制御して、20%水酸化ナトリウム水溶液400gを3時間かけて滴下し、この条件下で1時間撹拌した。
反応終了後、静置分液し、水層を取り除いた。次いで、反応物が溶解しているMIBK相に水を投入して15分間撹拌混合し、静置分液して水層を取り除いた。水層のpHが7になるまでこの操作を繰り返した後、デカンタ脱水で水分を除去してMIBK溶液の状態とし、さらにMIBKを減圧下で留去して、ビスフェノールアセトフェノンのベンゾイル化活性エステル化合物(a−1)[活性エステル当量:249]を得た。
MIBKの仕込み量を1400gとしたこと、及び、ビスフェノールアセトフェノン290gに代えてビスクレゾールフルオレン380g(フェノール性水酸基のモル数:2.0モル)を用いたこと以外は、合成例1と同様にして、ビスクレゾールフルオレンのベンゾイル化活性エステル化合物(a−2)[活性エステル当量:294]を得た。
ベンゾイルクロリド281.1g及びMIBK1200gに代えて、アセチルクロリド157.0g(酸クロリド基のモル数:2.0モル)及びMIBK900gを仕込んだこと、20%水酸化ナトリウム水溶液を滴下するときの系内を50℃以下に制御したこと以外は、合成例1と同様にして、ビスフェノールアセトフェノンのアセチル化活性エステル化合物(a−3)[活性エステル当量:187]を得た。
反応容器に、ビキシレノール型エポキシ樹脂(三菱化学(株)製YX4000、エポキシ当量185)191g、ビスフェノールアセトフェノンのベンゾイル化活性エステル化合物(a−1)[活性エステル当量:249]249g、シクロヘキサノン200gを入れ、攪拌して溶解させた。次いで、ジメチルアミノピリジンの5重量%シクロヘキサノン溶液37.8gを滴下し、窒素雰囲気下、180℃5時間にて反応させた。反応終了後、濾布を用いて濾過して、溶剤により希釈することで化合物(A−1)を得た(固形分30質量%のMEKとシクロヘキサノンの1:1の溶液)。
化合物(A−1)について、ゲル浸透クロマトグラフィーにより重量平均分子量(Mw)を測定し、電位差滴定法によりエポキシ当量を測定したところ、Mw(ポリスチレン換算値)は18000で、エポキシ当量は7000であった。
ビキシレノール型エポキシ樹脂(三菱化学(株)製YX4000、エポキシ当量185)の量を189gとしたこと、ビスフェノールアセトフェノンのベンゾイル化活性エステル化合物(a−1)249gに代えて、ビスクレゾールフルオレンのベンゾイル化活性エステル化合物(a−2)[活性エステル当量:294]294gを用いたこと以外は、化合物の合成例1と同様にして、化合物(A−2)を得た(固形分30質量%のMEKとシクロヘキサノンの1:1溶液)。
化合物(A−1)と同様に重量平均分子量(Mw)及びエポキシ当量を測定したところ、化合物(A−2)のMw(ポリスチレン換算値)は18000で、エポキシ当量は7000であった。
ビスフェノールアセトフェノンのベンゾイル化活性エステル化合物(a−1)249gに代えて、ビスフェノールアセトフェノンのアセチル化活性エステル化合物(a−3)[活性エステル当量:187]187gを用いたこと以外は、化合物の合成例1と同様にして、化合物(A−3)を得た(固形分30質量%のMEKとシクロヘキサノンの1:1溶液)。
化合物(A−1)と同様に重量平均分子量(Mw)及びエポキシ当量を測定したところ、化合物(A−3)のMw(ポリスチレン換算値)は15000で、エポキシ当量は5500であった。
ビキシレノール型エポキシ樹脂(三菱化学(株)製YX4000、エポキシ当量185)の量を181gとしたこと以外は、化合物の合成例1と同様にして、化合物(A−4)を得た(固形分30質量%のMEKとシクロヘキサノンの1:1溶液)。
化合物(A−1)と同様に重量平均分子量(Mw)及びエポキシ当量を測定したところ、化合物(A−4)のMw(ポリスチレン換算値)は21000で、エポキシ当量は35000であった。
ビスフェノール型エポキシ樹脂(新日鐵化学(株)製「ZX1059」、ビスフェノールA型とビスフェノールF型の1:1混合品、エポキシ当量169)10部、フッ素系エポキシ樹脂(三菱化学(株)製「YL7760」、エポキシ当量約238)10部、及び、ジシクロペンタジエン型エポキシ樹脂(DIC(株)製「HP−7200H」、エポキシ当量275)20部を、ソルベントナフサ35部に撹拌しながら加熱溶解させた。加熱溶解させたものを室温まで冷却し、そこへ、化合物(A−1)24部、活性エステル化合物(DIC(株)製「HPC8000−65T」、重量平均分子量が約2700、活性基当量約223の不揮発分65質量%のトルエン溶液)20部、トリアジン骨格含有フェノール系硬化剤(DIC(株)「LA−3018−50P」、水酸基当量約151、固形分50%の2−メトキシプロパノール溶液水酸基当量151の固形分50%のMEK溶液)10部、硬化促進剤(4−ジメチルアミノピリジン(DMAP)、固形分2質量%のMEK溶液)3部、難燃剤(三光(株)製「HCA−HQ」、10−(2,5−ジヒドロキシフェニル)−10−ヒドロ−9−オキサ−10−フォスファフェナンスレン−10−オキサイド、平均粒径2μm)2部、及び、フェニルアミノシラン系カップリング剤(信越化学工業(株)製、「KBM573」)で表面処理された球形シリカ(平均粒径0.5μm、(株)アドマテックス製「SOC2」、単位面積当たりのカーボン量0.39mg/m2)180部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを作製した。
次いで、離型処理付きポリエチレンテレフタレートフィルムの離型面上に、乾燥後の樹脂組成物層の厚みが30μmとなるように樹脂ワニスを均一に塗布し、80〜120℃(平均100℃)で4分間乾燥させて、接着フィルム1を作製した。
ここで、接着フィルムを作製するためのポリエチレンテレフタレートフィルムとして、破壊伸び及び線熱膨張係数(CTE)を測定するための硬化物の作製にはリンテック(株)製「PET501010」(厚さ50μm)を用い、破壊伸び及びCTE以外を測定するための硬化物の作製には、リンテック(株)製「AL5」(厚さ38μm)を用いた。
液状ナフタレン型エポキシ樹脂(エポキシ当量144、DIC(株)製「HP4032SS」)5部、フッ素系エポキシ樹脂(三菱化学(株)製「YL7760」、エポキシ当量約238)6部、ビフェニル型エポキシ樹脂(日本化薬(株)製「NC3000L」、エポキシ当量269)12部を、ソルベントナフサ25部に撹拌しながら加熱溶解させた。加熱溶解させたものを室温にまで冷却後、そこへ、化合物(A−2)を5部、活性エステル化合物(DIC(株)製「HPC8000−65T」、重量平均分子量が約2700、活性基当量約223の不揮発分65質量%のトルエン溶液)6部、ビスフェノールAジシアネートのプレポリマー(ロンザジャパン(株)製「BA230S75」、シアネート当量約232、不揮発分75質量%のMEK溶液)16部、フェノールノボラック型多官能シアネートエステル樹脂(ロンザジャパン(株)製「PT30S」、シアネート当量約133、不揮発分85質量%のMEK溶液)5部、硬化促進剤(4−ジメチルアミノピリジン、固形分2質量%のMEK溶液)1部、硬化促進剤(東京化成(株)製、コバルト(III)アセチルアセトナート[Co(III)Ac、固形分1質量%のMEK溶液]3部、ゴム粒子(ガンツ化成(株)製、スタフィロイドAC3816N)2部、難燃剤(三光(株)製「HCA−HQ」、10−(2,5−ジヒドロキシフェニル)−10−ヒドロ−9−オキサ−10−フォスファフェナンスレン−10−オキサイド、平均粒径2μm)2部、及び、フェニルアミノシラン系カップリング剤(信越化学工業(株)製、「KBM573」)で表面処理された球形シリカ(平均粒径0.24μm、(株)アドマテックス製「SOC1」、単位面積当たりのカーボン量0.36mg/m2)80部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを作製した。次いで、実施例1と同様にして、接着フィルム2を作製した。
実施例1の化合物(A−1)24部を、化合物(A−3)24部に代えたこと以外は、実施例1と同様にして、接着フィルム3を作製した。
実施例1の化合物(A−1)24部を、化合物(A−4)24部に代えたこと以外は、実施例1と同様にして、接着フィルム4を作製した。
実施例1の化合物(A−1)24部を、ビスフェノールA型フェノキシ樹脂(三菱化学(株)製「E1256B40」、固形分40質量%のMEK溶液、エポキシ当量8000、重量平均分子量50000)18部に代えたこと以外は、実施例1と同様にして接着フィルム5を作製した。
実施例2の化合物(A−2)5部を、ビキシレノール構造とビスフェノールアセトフェノン構造からなるフェノキシ樹脂(三菱化学(株)製「YX6954BH30」、固形分30質量%のMEK:シクロヘキサノン=1:1溶液、エポキシ当量13000、重量平均分子量35000)5部に代えたこと以外は、実施例2と同様にして接着フィルム6を作製した。
実施例及び比較例で作成した接着フィルムを用いて、以下の方法により評価基板を作製し、その評価を行った。
(1)積層板の下地処理
ガラス布基材エポキシ樹脂両面銅張積層板(銅箔の厚さ18μm、基板厚み0.3mm、松下電工(株)製R5715ES)の両面をメック(株)製粗化処理剤(CZ8100)により1μm、エッチングして銅表面の粗化処理をおこなった。
実施例及び比較例で作製した接着フィルムを、バッチ式真空加圧ラミネーター(ニチゴー・モートン(株)製2ステージビルドアップラミネーター「CVP700」)を用いて、樹脂組成物層が基板と接合するように、基板両面に積層した。積層は、30秒間減圧して気圧を13hPa以下とした後、100℃、圧力0.74MPaにて30秒間圧着させることにより実施した。次いで、積層された接着フィルムを、大気圧下、100℃、圧力0.5MPaにて60秒間熱プレスして平滑化した。
接着フィルムの積層後、樹脂組成物層を熱硬化(100℃で30分間、次いで175℃で30分間)せて、基板の両面に硬化体を形成した。その際、実施例1、3、4及び比較例1に関しては、支持体であるPETフィルムが付いた状態で樹脂組成物層を熱硬化させた。実施例2及び比較例2に関しては、支持体であるPETフィルムを剥離した後に樹脂組成物層を熱硬化させた。
絶縁層を形成した積層板を、膨潤液である、アトテックジャパン(株)のジエチレングリコールモノブチルエーテル含有のスウェリング・ディップ・セキュリガントP(グリコールエーテル類、水酸化ナトリウムの水溶液)に、60℃で10分間浸漬した。次に粗化液として、アトテックジャパン(株)のコンセントレート・コンパクトP(KMnO4:60g/L、NaOH:40g/Lの水溶液)に、80℃で20分間浸漬した。最後に中和液として、アトテックジャパン(株)のリダクションショリューシン・セキュリガントP(硫酸の水溶液)に40℃で5分間浸漬した。80℃で30分乾燥後、この基板を評価基板Aとした。
(4)で作製した評価基板Aを、PdCl2を含む無電解めっき用溶液に40℃で5分間浸漬し、次に無電解銅めっき液に25℃で20分間浸漬した。150℃にて30分間加熱してアニール処理を行った後に、エッチングレジストを形成し、エッチングによるパターン形成の後に、硫酸銅電解めっきを行い、30μmの厚さの導体層を形成した。次に、アニール処理を200℃にて60分間行い得られた基板を評価基板Bとした。
評価基板Aを、非接触型表面粗さ計(ビーコインスツルメンツ社製WYKO NT3300)を用いて、VSIコンタクトモード、50倍レンズにより測定範囲を121μm×92μmとして得られる数値によりRa値、Rq値を求めた。それぞれ10点の平均値を算出し表1に示した。
評価基板Bの導体層に、幅10mm、長さ100mmの部分の切込みをいれ、この一端を剥がしてつかみ具((株)ティー・エス・イー、オートコム型試験機 AC−50C−SL)で掴み、室温(25℃)にて、50mm/分の速度で垂直方向に35mmを引き剥がした時の荷重(kgf/cm(N/cm))を測定した。
実施例及び比較例で作製した接着フィルムを200℃にて90分間加熱して樹脂組成物層を熱硬化させた後、PETフィルムを剥離することにより、評価用硬化物Cを得た。評価用硬化物Cを、幅2mm、長さ80mmの試験片に切断し、該試験片について、アジレントテクノロジーズ社製「HP8362B」を用いて、空洞共振摂動法により測定周波数5.8GHz、測定温度23℃にて誘電正接を測定した。2本の試験片について測定を行い、平均値を算出し、表1に示した(tanδ1)。
評価用硬化物Cの幅2mm、長さ80mmとした試験片を、恒温恒湿槽(35℃、85%RH)中に3日間放置した後、該試験片について、アジレントテクノロジーズ社製「HP8362B」を用いて、空洞共振摂動法により測定周波数5.8GHz、測定温度23℃にて誘電正接を測定した。2本の試験片について測定を行い、平均値を算出し、表1に示した(tanδ2)。
また、恒温恒湿槽で放置する前後の誘電正接の上昇率を以下の式により算出し表1に示した。
誘電正接上昇率(%)=(tanδ2/tanδ1)×100
Claims (16)
- (A)下記式(1)で表される構成単位を有する化合物、(B)エポキシ樹脂、(C)硬化剤、及び(D)無機充填材を含有し、
樹脂組成物中の不揮発成分を100質量%とした場合の(A)化合物の含有量が、0.5質量%〜10質量%であり、
樹脂組成物中の不揮発成分を100質量%とした場合の(D)無機充填材の含有量が30〜90質量%である、樹脂組成物。
- (A)化合物が高分子化合物であり、重量平均分子量が、8000〜100000である、請求項1に記載の樹脂組成物。
- (A)化合物の末端がエステル基である請求項1又は2に記載の樹脂組成物。
- R3が芳香族環を有する1価の炭化水素基を表す、請求項1〜3のいずれか1項に記載の樹脂組成物。
- (B)エポキシ樹脂が、ビスフェノール型エポキシ樹脂、フッ素含有エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂及びこれらの混合物からなる群から選択される1種または2種以上である、請求項1〜4のいずれか1項に記載の樹脂組成物。
- (C)硬化剤が、フェノール系硬化剤、シアネートエステル系硬化剤及び活性エステル系硬化剤から選択される1種以上を含む請求項1〜5のいずれか1項に記載の樹脂組成物。
- (C)硬化剤が、トリアジン構造含有フェノール系樹脂、トリアジン構造含有アルキルフェノール系樹脂、シアネートエステル系硬化剤及び活性エステル系硬化剤から選択される1種以上を含む、請求項1〜6のいずれか1項に記載の樹脂組成物。
- (D)無機充填材の平均粒子径が、0.01μm〜5μmである、請求項1〜7のいずれか1項に記載の樹脂組成物。
- (D)無機充填材がシリカである、請求項1〜8のいずれか1項に記載の樹脂組成物。
- (C)硬化剤が、活性エステル系硬化剤と、フェノール系硬化剤及びシアネートエステル系硬化剤から選択される1種以上と、を含む、請求項1〜9のいずれか1項に記載の樹脂組成物。
- (B)エポキシ樹脂がフッ素含有エポキシ樹脂を含む、請求項1〜10のいずれか1項に記載の樹脂組成物。
- プリント配線板の絶縁層用である請求項1〜11のいずれか1項に記載の樹脂組成物。
- プリント配線板のビルドアップ層用である請求項1〜11のいずれか1項に記載の樹脂組成物。
- 請求項1〜13のいずれか1項に記載の樹脂組成物を含有する、シート状積層材料。
- 請求項1〜13のいずれか1項に記載の樹脂組成物若しくは請求項14に記載のシート状積層材料の熱硬化体を含む絶縁層を有するプリント配線板。
- 請求項15に記載のプリント配線板を含む、半導体装置。
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