CN104380545A - 具有光束形状修改的激光器 - Google Patents
具有光束形状修改的激光器 Download PDFInfo
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- CN104380545A CN104380545A CN201380024259.3A CN201380024259A CN104380545A CN 104380545 A CN104380545 A CN 104380545A CN 201380024259 A CN201380024259 A CN 201380024259A CN 104380545 A CN104380545 A CN 104380545A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims description 63
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 21
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000899717 Itaya Species 0.000 description 1
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Classifications
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/0233—Mounting configuration of laser chips
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
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- H01S5/02—Structural details or components not essential to laser action
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
Abstract
Description
Claims (21)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710697145.5A CN107579428B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
CN201710697144.0A CN107565374B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261644270P | 2012-05-08 | 2012-05-08 | |
US61/644,270 | 2012-05-08 | ||
PCT/US2013/039971 WO2013169796A1 (en) | 2012-05-08 | 2013-05-07 | Lasers with beam-shape modification |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201710697144.0A Division CN107565374B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
CN201710697145.5A Division CN107579428B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
Publications (2)
Publication Number | Publication Date |
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CN104380545A true CN104380545A (zh) | 2015-02-25 |
CN104380545B CN104380545B (zh) | 2017-09-15 |
Family
ID=49548575
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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CN201380024259.3A Active CN104380545B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
CN201710697144.0A Active CN107565374B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
CN201710697145.5A Active CN107579428B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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CN201710697144.0A Active CN107565374B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
CN201710697145.5A Active CN107579428B (zh) | 2012-05-08 | 2013-05-07 | 具有光束形状修改的激光器 |
Country Status (5)
Country | Link |
---|---|
US (3) | US9401582B2 (zh) |
EP (2) | EP4228109A3 (zh) |
JP (1) | JP6220864B2 (zh) |
CN (3) | CN104380545B (zh) |
WO (1) | WO2013169796A1 (zh) |
Cited By (1)
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CN114336279A (zh) * | 2021-12-20 | 2022-04-12 | 华侨大学 | 实现表面等离激元激光输出到远场的装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US9401582B2 (en) | 2012-05-08 | 2016-07-26 | M/A-Com Technology Solutions Holdings, Inc. | Lasers with beam-shape modification |
US9692202B2 (en) | 2013-11-07 | 2017-06-27 | Macom Technology Solutions Holdings, Inc. | Lasers with beam shape and beam direction modification |
JP6790364B2 (ja) * | 2016-01-25 | 2020-11-25 | 三菱電機株式会社 | 光半導体装置 |
KR102545749B1 (ko) * | 2016-02-19 | 2023-06-21 | 매컴 테크놀로지 솔루션스 홀딩스, 인크. | 광자 집적 회로에서의 레이저 정렬을 위한 기술 |
KR101929465B1 (ko) * | 2016-10-18 | 2019-03-14 | 주식회사 옵텔라 | 광학모듈 |
WO2018193551A1 (ja) * | 2017-04-19 | 2018-10-25 | 三菱電機株式会社 | 光半導体装置及びその製造方法 |
JP6911567B2 (ja) | 2017-06-22 | 2021-07-28 | 住友電気工業株式会社 | 量子カスケード半導体レーザ |
JP6939120B2 (ja) | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
US10608412B2 (en) * | 2017-06-19 | 2020-03-31 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser, light emitting apparatus |
JP6939119B2 (ja) * | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
US10476237B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10476235B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10404038B2 (en) * | 2017-06-22 | 2019-09-03 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
JP6394832B1 (ja) * | 2017-11-17 | 2018-09-26 | 三菱電機株式会社 | 半導体レーザ装置 |
DE102018111319A1 (de) | 2018-05-11 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US10649138B2 (en) | 2018-09-21 | 2020-05-12 | Nokia Solutions And Networks Oy | Optical device having a photonic chip with one or more suspended functional portions |
CN114006261B (zh) * | 2022-01-04 | 2022-03-11 | 福建慧芯激光科技有限公司 | 一种具有圆形光斑的垂直腔面发射激光器 |
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CN107579428A (zh) | 2018-01-12 |
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US9865993B2 (en) | 2018-01-09 |
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