CN104362179B - 一种薄膜晶体管、其制作方法、阵列基板及显示装置 - Google Patents

一种薄膜晶体管、其制作方法、阵列基板及显示装置 Download PDF

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CN104362179B
CN104362179B CN201410539188.7A CN201410539188A CN104362179B CN 104362179 B CN104362179 B CN 104362179B CN 201410539188 A CN201410539188 A CN 201410539188A CN 104362179 B CN104362179 B CN 104362179B
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active layer
film transistor
thin film
orthographic projection
substrate
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CN104362179A (zh
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张莹
李鑫
朱红
于洪俊
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Priority to PCT/CN2015/074270 priority patent/WO2016058321A1/zh
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Abstract

本发明公开了一种薄膜晶体管、其制作方法、阵列基板及显示装置，薄膜晶体管中的有源层包括层叠设置的第一有源层和第二有源层；其中，第一有源层在衬底基板上的正投影覆盖源极、漏极以及位于源极和漏极之间的间隙处的正投影，且覆盖栅极的正投影；第二有源层位于源极和漏极之间的间隙处，且在衬底基板上的正投影位于栅极的正投影所在区域内，在背光光照条件下，由于薄膜晶体管的第二有源层所在区域被栅极遮挡，只有第一有源层中没有被栅极遮挡的区域可以产生的光生载流子数，因此，这样的结构产生的光生载流子数目少，有效抑制了关态电流的上升，从而提高开态电流和关态电流之比，进一步提升薄膜晶体管的发光性能，增强显示器件的图像显示质量。

Description

一种薄膜晶体管、其制作方法、阵列基板及显示装置
技术领域
本发明涉及显示技术领域，尤指一种薄膜晶体管、其制作方法、阵列基板及显示装置。
背景技术
通常，在显示器件的生产中，薄膜晶体管(Thin-film Transistor，TFT)起到具有十分重要的作用，主要利用薄膜晶体管的开态对显示器件的像素电容快速充电，利用薄膜晶体管的关态来保持像素电容的电压，从而实现快速响应和良好存储的统一。薄膜晶体管由于具有非常高的开态电流(Ion)和关态电流(Ioff)之比和陡峭的转移特性，因而作为非线性开关元件被广泛地应用于大面积液晶显示器以及接触型图像传感器等领域。
目前常规底栅反堆栈型非晶硅薄膜晶体管的具体结构如图1所示，包括：衬底基板01，以及设置在衬底基板01上的栅极02、设置在栅极02上且与栅极02绝缘的有源层03、相对而置且分别与有源层03电性连接的源极04和漏极05，当通过安装在衬底基板01中的电路将电流施加到栅极02时，加载到源极04的电流通过有源层03传输到漏极05，驱动显示器件的像素单元，从而显示图像。栅极02与有源层03之间设置有栅绝缘层06，在源极04和漏极05之上设置有钝化层07，其中，栅绝缘层06通常采用a-SiNx薄膜，有源层03通常采用a-Si:H薄膜，钝化层07通常采用a-SiNx薄膜，栅极02、源极04和漏极05通常采用金属铬材料。为了改善源极04、漏极05与a-Si:H薄膜的接触特性，在其间插入了薄的n+型a-Si:H薄膜作为欧姆接触层08。
作为薄膜晶体管有源层的a-Si:H薄膜是一种具有良好光敏性的材料，但是在背光光照条件下有源层自身的电阻阻值会发生改变，会使薄膜晶体管的关态电流上升2～3个数量级，这样会大大减小薄膜晶体管的开态电流与关态电流之比，严重地影响了液晶显示器的图像显示质量。
因此，如何在背光光照条件下，提高薄膜晶体管的开态电流与关态电流之比，是本领域技术人员亟需解决的技术问题。
发明内容
有鉴于此，本发明实施例提供一种薄膜晶体管、其制作方法、阵列基板及显示装置，可以有效抑制关态电流的上升，提高开态电流和关态电流之比，从而提升薄膜晶体管的发光性能。
因此，本发明实施例提供了一种薄膜晶体管，包括衬底基板，以及设置在所述衬底基板上的栅极、设置在所述栅极上且与所述栅极绝缘的有源层、相对而置且分别与所述有源层电性连接的源极和漏极；
所述有源层包括层叠设置的第一有源层和第二有源层；其中，
所述第一有源层在所述衬底基板上的正投影覆盖所述源极、漏极以及位于所述源极和漏极之间的间隙处的正投影，且覆盖所述栅极的正投影；
所述第二有源层位于所述源极和漏极之间的间隙处，且在衬底基板上的正投影位于所述栅极的正投影所在区域内。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，所述第二有源层位于所述第一有源层的上方且与所述第一有源层相互连接。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，还包括：设置在所述第一有源层与所述源极之间以及设置在所述第一有源层和所述漏极之间的欧姆接触层。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，还包括：设置在所述第二有源层上方且与所述第二有源层相互绝缘的遮光层；
所述遮光层在所述衬底基板上的正投影覆盖所述第二有源层的正投影。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，所述第二有源层的厚度大于所述第一有源层的厚度。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，所述第一有源层的厚度为60nm至100nm。
在一种可能的实现方式中，在本发明实施例提供的上述薄膜晶体管中，所述第一有源层和所述第二有源层的厚度之和为100nm至500nm。
本发明实施例提供了一种阵列基板，包括本发明实施例提供的上述薄膜晶体管。
本发明实施例提供的一种显示装置，包括本发明实施例提供的上述阵列基板。
本发明实施例还提供了一种本发明实施例提供的上述薄膜晶体管的制作方法，包括：
在衬底基板上形成栅极的图形；
在形成有所述栅极的衬底基板上形成第一有源层的图形；
在所述第一有源层上形成包括第二有源层、源极和漏极的图形。
本发明实施例的有益效果包括：
本发明实施例提供的一种薄膜晶体管、其制作方法、阵列基板及显示装置，薄膜晶体管中的有源层包括层叠设置的第一有源层和第二有源层；其中，第一有源层在衬底基板上的正投影覆盖源极、漏极以及位于源极和漏极之间的间隙处的正投影，且覆盖栅极的正投影；第二有源层位于源极和漏极之间的间隙处，且在衬底基板上的正投影位于栅极的正投影所在区域内，在背光光照条件下，由于薄膜晶体管的第二有源层所在区域被栅极遮挡，只有第一有源层中没有被栅极遮挡的区域可以产生的光生载流子数，因此，这样的结构产生的光生载流子数目少，有效抑制了关态电流的上升，从而提高开态电流和关态电流之比，进一步提升薄膜晶体管的发光性能，增强显示器件的图像显示质量。
附图说明
图1为现有技术中的底栅反堆栈型薄膜晶体管的结构示意图；
图2为本发明实施例提供的薄膜晶体管的结构示意图；
图3为本发明实施例提供的薄膜晶体管的制作方法的流程图。
具体实施方式
下面结合附图，对本发明实施例提供的薄膜晶体管、其制作方法、阵列基板及显示装置的具体实施方式进行详细地说明。
其中，附图中各膜层的厚度和区域的大小形状不反映薄膜晶体管各部件的真实比例，目的只是示意说明本发明内容。
本发明实施例提供了一种薄膜晶体管，如图2所示，包括衬底基板11，以及设置在衬底基板上的栅极12、设置在栅极12上且与栅极绝缘的有源层13、相对而置且分别与有源层电性连接的源极14和漏极15；
该有源层13包括层叠设置的第一有源层131和第二有源层132；其中，
该第一有源层131在衬底基板11上的正投影覆盖源极14、漏极15以及位于源极14和漏极15之间的间隙处的正投影，且覆盖栅极12的正投影；
该第二有源层132位于源极14和漏极15之间的间隙处，且在衬底基板11上的正投影位于栅极12的正投影所在区域内。
在本发明实施例提供的上述薄膜晶体管，薄膜晶体管中的有源层包括层叠设置的第一有源层和第二有源层；其中，第一有源层在衬底基板上的正投影覆盖源极、漏极以及位于源极和漏极之间的间隙处的正投影，且覆盖栅极的正投影；第二有源层位于源极和漏极之间的间隙处，且在衬底基板上的正投影位于栅极的正投影所在区域内，在背光光照条件下，由于薄膜晶体管的第二有源层所在区域被栅极遮挡，只有第一有源层中没有被栅极遮挡的区域可以产生的光生载流子数，因此，这样的结构产生的光生载流子数目少，有效抑制了关态电流的上升，从而提高开态电流和关态电流之比，进一步提升薄膜晶体管的发光性能，增强显示器件的图像显示质量。
进一步地，在具体实施时，在本发明实施例提供的上述薄膜晶体管中，该第二有源层132位于第一有源层131的上方且与第一有源层131相互连接，这样可以在外部看来，第一有源层131和第二有源层132仍是一个整体，有利于电流的传输，另外，第一有源层131和第二有源层132也可相互绝缘，分别与源极、漏极电性相连，在此不做赘述。
在具体实施时，在本发明实施例提供的上述薄膜晶体管中，第二有源层132的厚度一般大于第一有源层131的厚度，这样可以使薄膜晶体管在背光光照条件下，第一有源层131只吸收较少的光子数，被非晶硅薄膜吸收的光子数目直接决定着膜内产生的光生载流子数目，从而产生的光生载流子的数目较少，因此，能有效抑制背光照对薄膜晶体管关态电流的不良影响，即，有效抑制关态电流的上升，进一步提高开态电流与关态电流之比。
在具体实施时，在本发明实施例提供的上述薄膜晶体管中，第一有源层131的厚度为60nm至100nm，则受背光光照的源极和漏极下面的第一有源层的膜厚很薄，在背光光照条件下所吸收的光子数很少，产生的光生载流子对薄膜晶体管关态电流的影响远远小于常规薄膜晶体管结构。设a-Si:H薄膜的吸收系数α为1×104cm-1，第一有源层131的厚度为80nm，而常规薄膜晶体管结构中的有源层的总膜厚为300nm，计算表明，在相同强度背光照射下，第一层有源层中产生的光生载流子数只有常规薄膜晶体管结构的百分之三十。因此，本发明实施例提供的上述薄膜晶体管可以保证高的开态电流和关态电流之比，以提升薄膜晶体管的发光性能，进而增强显示器件的图像显示质量。
在具体实施时，在本发明实施例提供的上述薄膜晶体管中，第一有源层131和第二有源层132的厚度之和为100nm至500nm，这两层的厚度之和与常规薄膜晶体管结构中的有源层的总厚度接近，这样可以保证不会造成薄膜晶体管开态电流的不良影响。
一般地，在具体实施时，在本发明实施例提供的上述薄膜晶体管中，为了改善源极14、漏极15与有源层13的接触特性，具体地，如图2所示，还可以包括：设置在第一有源层131与源极14之间以及设置在第一有源层131和漏极15之间的欧姆接触层16。
在具体实施时，在本发明实施例提供的上述薄膜晶体管中，由于薄膜晶体管电性能易受光影响，为了能够防止外部光线也会对薄膜晶体管的第二有源层产生影响，避免造成关态电流的上升，如图2所示，还包括：设置在第二有源层132上方且与第二有源层132相互绝缘的遮光层17；并且，该遮光层17在衬底基板11上的正投影覆盖第二有源层132的正投影。
具体地，在本发明实施例提供的上述薄膜晶体管中，如图2所示，一般还可以包括设置在栅极12与有源层13之间的栅绝缘层18，该栅绝缘层18可以使栅极12与有源层13相互绝缘；并且，一般还可以包括设置在在源极14和漏极15之上的钝化层19，该钝化层19可以使遮光层17与第二有源层132相互绝缘，在此不再赘述。
基于同一发明构思，本发明实施例还提供了一种阵列基板，由于该阵列基板解决问题的原理与前述薄膜晶体管相似，因此该阵列基板的实施可以参见薄膜晶体管的实施，重复之处不再赘述。
在具体实施时，本发明实施例提供的上述阵列基板可以应用于液晶显示面板，也可以应用于有机电致发光显示面板，在此不做限定。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述阵列基板，该显示装置可以是显示器、手机、电视、笔记本、一体机等，对于显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。
基于同一发明构思，本发明实施例还提供了一种本发明实施例提供的上述薄膜晶体管的制作方法，由于该方法解决问题的原理与前述一种薄膜晶体管相似，因此该方法的实施可以参见薄膜晶体管的实施，重复之处不再赘述。
在具体实施时，本发明实施例提供的薄膜晶体管的制作方法，如图3所示，具体包括以下步骤：
S101、在衬底基板上形成栅极的图形；
在具体实施时，在衬底基板上沉积一层金属材料，对金属材料进行构图工艺，形成栅极的图形。
S102、在形成有栅极的衬底基板上形成第一有源层的图形；
在具体实施时，在形成有栅极的衬底基板上沉积一层非晶硅材料，对非晶硅材料进行构图工艺，形成第一有源层的图形。
S103、在第一有源层上形成包括第二有源层、源极和漏极的图形。
在具体实施时，步骤S103在第一有源层上形成包括第二有源层、源极和漏极的图形，具体可以采用如下方式：
在具体实施时，首先，在第一有源层上沉积一层非晶硅材料，对非晶硅材料进行构图工艺，使非晶硅材料在衬底基板上的正投影位于在栅极的正投影所在区域内形成第二有源层的图形；
然后，在第二有源层上沉积一层金属材料，对金属材料进行构图工艺，使金属材料在衬底基板上的正投影分别位于第一有源层在衬底基板上的正投影不包括栅极的正投影所在区域内形成与第二有源层相连接的源极和漏极的图形。
或者是，首先，在第一有源层上沉积一层金属材料，对金属材料进行构图工艺，使金属材料在衬底基板上的正投影位于第一有源层在衬底基板上的正投影不包括栅极的正投影所在区域内形成源极和漏极的图形；
然后，在源极和漏极上沉积一层非晶硅材料，对非晶硅材料进行构图工艺，使非晶硅材料在衬底基板上的正投影位于在栅极的正投影所在区域内形成与源极和漏极相连接的第二有源层的图形。
下面以一个具体的实例详细的说明本发明实施例提供的薄膜晶体管的制作方法，具体步骤如下：
1、在洁净的平板玻璃上淀积一层金属铬膜，通过光刻工艺，形成栅极的图形；
2、在连续式分离的多反应室等离子体增强化学气相沉积(Plasma EnhancedChemical Vapor Depositio，PECVD)设备上依次淀积a-SiNx薄膜作为栅绝缘层、a-Si:H薄膜作为第一有源层和n+型a-Si:H薄膜作为欧姆接触层。在制备过程中，所用原料气体为氢气稀释的硅烷(SiH4)，其中SiH4的含量为10％，氨气和氢气稀释的磷烷(PH3)，其中PH3的含量为20％；
下表1中列出了制备非晶硅基薄膜的工艺参数。
表1
3、通过光刻工艺，形成一层n+型a-Si:H薄膜后，再淀积一层金属铬膜，通过光刻工艺，形成源极和漏极；
4、将源、漏极间的n+型a-Si:H薄膜刻蚀后，再用PECVD法以表1中生长a-Si:H薄膜的工艺参数，淀积一定厚度的第二层a-Si:H薄膜，通过光刻工艺，形成第二有源层。应特别注意的是，在等离子体刻蚀n+型a-Si:H薄膜和淀积第二层a-Si:H薄膜时，应采用一定的工艺措施消除其间的界面态；
5、为消除正面光照对TFT性能的影响，在第二有源层上再制备a-SiNx薄膜作为钝化层。在钝化层上再淀积金属铬膜，通过光刻工艺。形成遮光层。在制备过程中，采用四氟甲烷(CF4)气体的等离子体刻蚀技术刻蚀非晶硅基薄膜，通过控制衬底温度、反应室气压和射频功率获得a-Si:H与a-SiNx薄膜的选择性刻蚀。其中，非晶硅薄膜晶体管的导电沟道的宽度W与长度L之比为W:L＝100:10，这样可以保证较高的开态电流。
至此，经过实例提供的上述步骤1至5制作出了本发明实施例提供的上述薄膜晶体管。
本发明实施例提供的一种薄膜晶体管、其制作方法及显示装置，薄膜晶体管中的有源层包括层叠设置的第一有源层和第二有源层；其中，第一有源层在衬底基板上的正投影覆盖源极、漏极以及位于源极和漏极之间的间隙处的正投影，且覆盖栅极的正投影；第二有源层位于源极和漏极之间的间隙处，且在衬底基板上的正投影位于栅极的正投影所在区域内，在背光光照条件下，由于薄膜晶体管的第二有源层所在区域被栅极遮挡，只有第一有源层中没有被栅极遮挡的区域可以产生的光生载流子数，因此，这样的结构产生的光生载流子数目少，有效抑制了关态电流的上升，从而提高开态电流和关态电流之比，进一步提升薄膜晶体管的发光性能，增强显示器件的图像显示质量。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种薄膜晶体管，包括衬底基板，以及设置在所述衬底基板上的栅极、设置在所述栅极上且与所述栅极绝缘的有源层、相对而置且分别与所述有源层电性连接的源极和漏极，其特征在于：
所述有源层包括层叠设置的第一有源层和第二有源层；其中，
所述第一有源层在所述衬底基板上的正投影覆盖所述源极、漏极以及位于所述源极和漏极之间的间隙处的正投影，且覆盖所述栅极的正投影；
所述第二有源层位于所述源极和漏极之间的间隙处，且在衬底基板上的正投影位于所述栅极的正投影所在区域内；
所述第一有源层和第二有源层的材料均为非晶硅材料。
2.如权利要求1所述的薄膜晶体管，其特征在于，所述第二有源层位于所述第一有源层的上方且与所述第一有源层相互连接。
3.如权利要求2所述的薄膜晶体管，其特征在于，还包括：设置在所述第一有源层与所述源极之间以及设置在所述第一有源层和所述漏极之间的欧姆接触层。
4.如权利要求2所述的薄膜晶体管，其特征在于，还包括：设置在所述第二有源层上方且与所述第二有源层相互绝缘的遮光层；
所述遮光层在所述衬底基板上的正投影覆盖所述第二有源层的正投影。
5.如权利要求1-4任一项所述的薄膜晶体管，其特征在于，所述第二有源层的厚度大于所述第一有源层的厚度。
6.如权利要求5所述的薄膜晶体管，其特征在于，所述第一有源层的厚度为60nm至100nm。
7.如权利要求6所述的薄膜晶体管，其特征在于，所述第一有源层和所述第二有源层的厚度之和为100nm至500nm。
8.一种阵列基板，其特征在于，包括如权利要求1-7任一项所述的薄膜晶体管。
9.一种显示装置，其特征在于，所述显示装置中包括如权利要求8所述的阵列基板。
10.一种如权利要求1-7任一项所述薄膜晶体管的制作方法，其特征在于，包括：
在衬底基板上形成栅极的图形；
在形成有所述栅极的衬底基板上形成第一有源层的图形；
在所述第一有源层上形成包括第二有源层、源极和漏极的图形。
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