CN104270885A - 具有聚合物基质的插件框架及其制造方法 - Google Patents

具有聚合物基质的插件框架及其制造方法 Download PDF

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Publication number
CN104270885A
CN104270885A CN201410498486.6A CN201410498486A CN104270885A CN 104270885 A CN104270885 A CN 104270885A CN 201410498486 A CN201410498486 A CN 201410498486A CN 104270885 A CN104270885 A CN 104270885A
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CN
China
Prior art keywords
socket
layer
hole
chip
chip carrier
Prior art date
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Pending
Application number
CN201410498486.6A
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English (en)
Chinese (zh)
Inventor
卓尔·赫尔维茨
黄士辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuhai Advanced Chip Carriers and Electronic Substrate Solutions Technologies Co Ltd
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Zhuhai Advanced Chip Carriers and Electronic Substrate Solutions Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/269,884 external-priority patent/US20150296617A1/en
Application filed by Zhuhai Advanced Chip Carriers and Electronic Substrate Solutions Technologies Co Ltd filed Critical Zhuhai Advanced Chip Carriers and Electronic Substrate Solutions Technologies Co Ltd
Publication of CN104270885A publication Critical patent/CN104270885A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/224Housing; Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/65Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19Manufacturing methods of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20Structure, shape, material or disposition of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
CN201410498486.6A 2014-05-05 2014-09-25 具有聚合物基质的插件框架及其制造方法 Pending CN104270885A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/269,884 2014-05-05
US14/269,884 US20150296617A1 (en) 2014-04-09 2014-05-05 Interposer frame with polymer matrix and methods of fabrication

Publications (1)

Publication Number Publication Date
CN104270885A true CN104270885A (zh) 2015-01-07

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CN201410498486.6A Pending CN104270885A (zh) 2014-05-05 2014-09-25 具有聚合物基质的插件框架及其制造方法

Country Status (4)

Country Link
JP (1) JP2015213152A (ko)
KR (2) KR101670666B1 (ko)
CN (1) CN104270885A (ko)
TW (1) TWI652864B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101951284B1 (ko) * 2017-07-04 2019-02-22 주식회사 이노글로벌 초정밀 가공기술을 활용한 검사용 인터포저 지지 프레임의 제조방법
JP7068460B2 (ja) 2018-07-25 2022-05-16 株式会社Fuji 決定装置及びこれを備えるチップ装着装置

Citations (7)

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US20040042140A1 (en) * 2002-09-03 2004-03-04 United Test Center Inc. Double-sided thermally enhanced IC chip package
CN101241861A (zh) * 2006-06-01 2008-08-13 Amitec多层互连技术有限公司 新型多层无芯支撑结构及其制作方法
US20100013081A1 (en) * 2008-07-18 2010-01-21 United Test And Assembly Center Ltd. Packaging structural member
US20120228754A1 (en) * 2011-03-08 2012-09-13 Georgia Tech Research Corporation Chip-last embedded interconnect structures and methods of making the same
CN102792520A (zh) * 2010-03-03 2012-11-21 株式会社村田制作所 无线通信模块以及无线通信设备
CN103187365A (zh) * 2012-06-25 2013-07-03 珠海越亚封装基板技术股份有限公司 多层电子支撑结构的层间对准
CN104332414A (zh) * 2014-04-09 2015-02-04 珠海越亚封装基板技术股份有限公司 嵌入式芯片的制造方法

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JP2003229656A (ja) * 2002-02-04 2003-08-15 Nec Access Technica Ltd はんだパターン形成方法及び多面取り回路基板
JP5127315B2 (ja) * 2007-06-22 2013-01-23 パナソニック株式会社 部品内蔵モジュール
JP5280079B2 (ja) * 2008-03-25 2013-09-04 新光電気工業株式会社 配線基板の製造方法
JP4343254B1 (ja) * 2008-06-02 2009-10-14 株式会社東芝 多層プリント配線基板
JP5617846B2 (ja) * 2009-11-12 2014-11-05 日本電気株式会社 機能素子内蔵基板、機能素子内蔵基板の製造方法、及び、配線基板
JP4978709B2 (ja) * 2010-03-12 2012-07-18 大日本印刷株式会社 電子部品内蔵配線基板
JP6051359B2 (ja) * 2010-12-22 2016-12-27 俊 保坂 コア付きインダクタ素子およびその製造方法
JP2012256675A (ja) * 2011-06-08 2012-12-27 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びその製造方法
JP5189672B2 (ja) * 2011-09-01 2013-04-24 株式会社フジクラ 部品内蔵基板およびその製造方法
US9615447B2 (en) * 2012-07-23 2017-04-04 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Multilayer electronic support structure with integral constructional elements
JP2014036188A (ja) * 2012-08-10 2014-02-24 Dainippon Printing Co Ltd キャビティを有する多層配線基板及びその製造方法
JP6152254B2 (ja) * 2012-09-12 2017-06-21 新光電気工業株式会社 半導体パッケージ、半導体装置及び半導体パッケージの製造方法
JP2014072279A (ja) * 2012-09-28 2014-04-21 Dainippon Printing Co Ltd 部品内蔵配線基板の製造方法
WO2014065035A1 (ja) * 2012-10-22 2014-05-01 株式会社村田製作所 電子部品内蔵モジュール
JP5400235B1 (ja) * 2012-11-09 2014-01-29 太陽誘電株式会社 電子部品内蔵基板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040042140A1 (en) * 2002-09-03 2004-03-04 United Test Center Inc. Double-sided thermally enhanced IC chip package
CN101241861A (zh) * 2006-06-01 2008-08-13 Amitec多层互连技术有限公司 新型多层无芯支撑结构及其制作方法
US20100013081A1 (en) * 2008-07-18 2010-01-21 United Test And Assembly Center Ltd. Packaging structural member
CN102792520A (zh) * 2010-03-03 2012-11-21 株式会社村田制作所 无线通信模块以及无线通信设备
US20120228754A1 (en) * 2011-03-08 2012-09-13 Georgia Tech Research Corporation Chip-last embedded interconnect structures and methods of making the same
CN103187365A (zh) * 2012-06-25 2013-07-03 珠海越亚封装基板技术股份有限公司 多层电子支撑结构的层间对准
CN104332414A (zh) * 2014-04-09 2015-02-04 珠海越亚封装基板技术股份有限公司 嵌入式芯片的制造方法

Also Published As

Publication number Publication date
KR20160114016A (ko) 2016-10-04
KR101670666B1 (ko) 2016-10-31
JP2015213152A (ja) 2015-11-26
KR101770148B1 (ko) 2017-08-22
KR20150126764A (ko) 2015-11-13
TW201543776A (zh) 2015-11-16
TWI652864B (zh) 2019-03-01

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Address after: 519175 FPC Workshop 3209 North Everest Avenue, Doumen District, Zhuhai City, Guangdong Province

Applicant after: Zhuhai Yueya Semiconductor Co., Ltd.

Address before: 519173 South First and Second Floors of FPC Plant in Fongzheng PCB Industrial Park, Hushan Village, Fushan Industrial Zone, Zhuhai City, Guangdong Province

Applicant before: Zhuhai Advanced Chip Carriers & Electronic Substrates Solutions Technologies Co., Ltd.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150107