CN104245613A - 带含有无机微粒的氧化硅膜的玻璃基板的制造方法 - Google Patents
带含有无机微粒的氧化硅膜的玻璃基板的制造方法 Download PDFInfo
- Publication number
- CN104245613A CN104245613A CN201380021597.1A CN201380021597A CN104245613A CN 104245613 A CN104245613 A CN 104245613A CN 201380021597 A CN201380021597 A CN 201380021597A CN 104245613 A CN104245613 A CN 104245613A
- Authority
- CN
- China
- Prior art keywords
- inorganic particles
- oxide film
- silicon oxide
- glass substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 196
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000010419 fine particle Substances 0.000 title abstract 8
- 238000000576 coating method Methods 0.000 claims abstract description 113
- 239000011248 coating agent Substances 0.000 claims abstract description 107
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010954 inorganic particle Substances 0.000 claims description 148
- 239000012530 fluid Substances 0.000 claims description 84
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 55
- 229910044991 metal oxide Inorganic materials 0.000 claims description 29
- 150000004706 metal oxides Chemical class 0.000 claims description 29
- 239000000413 hydrolysate Substances 0.000 claims description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 16
- -1 organoalkoxysilane Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 abstract description 28
- 239000002245 particle Substances 0.000 abstract description 28
- 230000007062 hydrolysis Effects 0.000 abstract description 5
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 3
- 229920001223 polyethylene glycol Polymers 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000006060 molten glass Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 32
- 239000007921 spray Substances 0.000 description 26
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 25
- 239000007787 solid Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000003595 mist Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 10
- 238000005507 spraying Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 229960001296 zinc oxide Drugs 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000012702 metal oxide precursor Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 229910052693 Europium Inorganic materials 0.000 description 4
- 238000006124 Pilkington process Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 2
- IAGCDJZAYOZMCS-UHFFFAOYSA-N 2-hydroxypropanoic acid;titanium Chemical compound [Ti].CC(O)C(O)=O IAGCDJZAYOZMCS-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PXCROMSXSIITIF-UHFFFAOYSA-N C(C)C(=O)C(=O)C.[Sn] Chemical compound C(C)C(=O)C(=O)C.[Sn] PXCROMSXSIITIF-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910021623 Tin(IV) bromide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- CANRESZKMUPMAE-UHFFFAOYSA-L Zinc lactate Chemical compound [Zn+2].CC(O)C([O-])=O.CC(O)C([O-])=O CANRESZKMUPMAE-UHFFFAOYSA-L 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- JNVCSEDACVAATK-UHFFFAOYSA-L [Ca+2].[S-]SSS[S-] Chemical compound [Ca+2].[S-]SSS[S-] JNVCSEDACVAATK-UHFFFAOYSA-L 0.000 description 1
- RPSIYHXLSWPDLN-UHFFFAOYSA-N [Ti].[O].C(C)C(=O)C(=O)C Chemical compound [Ti].[O].C(C)C(=O)C(=O)C RPSIYHXLSWPDLN-UHFFFAOYSA-N 0.000 description 1
- APIDIPGVBRXKEJ-UHFFFAOYSA-N acetic acid titanium Chemical compound [Ti].CC(O)=O.CC(O)=O APIDIPGVBRXKEJ-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical class CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229940023860 canarypox virus HIV vaccine Drugs 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- VLWUKSRKUMIQAX-UHFFFAOYSA-N diethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[SiH](OCC)CCCOCC1CO1 VLWUKSRKUMIQAX-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- ZVJXKUWNRVOUTI-UHFFFAOYSA-N ethoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 ZVJXKUWNRVOUTI-UHFFFAOYSA-N 0.000 description 1
- STBFUFDKXHQVMJ-UHFFFAOYSA-N ethoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OCC STBFUFDKXHQVMJ-UHFFFAOYSA-N 0.000 description 1
- QQBWQAURZPGDOG-UHFFFAOYSA-N ethyl hexanoate;zinc Chemical compound [Zn].CCCCCC(=O)OCC QQBWQAURZPGDOG-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- BKXVGDZNDSIUAI-UHFFFAOYSA-N methoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OC)C1=CC=CC=C1 BKXVGDZNDSIUAI-UHFFFAOYSA-N 0.000 description 1
- FUMSHFZKHQOOIX-UHFFFAOYSA-N methoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OC FUMSHFZKHQOOIX-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 1
- GYUPBLLGIHQRGT-UHFFFAOYSA-N pentane-2,4-dione;titanium Chemical compound [Ti].CC(=O)CC(C)=O GYUPBLLGIHQRGT-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 description 1
- 229940051851 sulfurated lime Drugs 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- WYKQDEPZMVTTSJ-UHFFFAOYSA-J titanium(4+);tetrabenzoate Chemical compound [Ti+4].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 WYKQDEPZMVTTSJ-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- UVPKQBWUNYZZFZ-UHFFFAOYSA-N tris(1,1,2,2,2-pentafluoroethoxy)-(1,1,2,2,2-pentafluoroethyl)silane Chemical compound FC(F)(F)C(F)(F)O[Si](OC(F)(F)C(F)(F)F)(OC(F)(F)C(F)(F)F)C(F)(F)C(F)(F)F UVPKQBWUNYZZFZ-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229940102001 zinc bromide Drugs 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011576 zinc lactate Substances 0.000 description 1
- 229940050168 zinc lactate Drugs 0.000 description 1
- 235000000193 zinc lactate Nutrition 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- JDLYKQWJXAQNNS-UHFFFAOYSA-L zinc;dibenzoate Chemical compound [Zn+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 JDLYKQWJXAQNNS-UHFFFAOYSA-L 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/104—Pretreatment of other substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/107—Post-treatment of applied coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
- C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
- B05D2203/35—Glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
本发明提供一种可以根据目标光学特性使用所希望的粒径的无机微粒、且无机微粒的选择范围大的带含有无机微粒的氧化硅膜的玻璃基板的制造方法。在玻璃基板10上涂布含有无机微粒14、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜12;或者,将熔融玻璃成形为玻璃带,对玻璃带进行退火,接着进行切断制造玻璃基板时,在玻璃带上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜。
Description
技术领域
本发明涉及一种带含有无机微粒的氧化硅膜的玻璃基板的制造方法。
背景技术
在表面上具有凹凸的玻璃基板由于使入射的光发生散射,因而被用作具有防眩效果的窗玻璃、具有光取出效果的有机EL元件用玻璃基板、具有光封闭效果的太阳能电池用覆盖玻璃等。
作为在表面上具有凹凸的玻璃基板,已知有在玻璃基板上的氧化硅膜中含有无机微粒的玻璃基板。作为该玻璃基板的制造方法,例如,提出了下述方法。
(1)通过将金属氯化物用作原料的热分解法在玻璃基板上形成金属氧化物粒子后,进一步形成氧化硅膜的方法(参照专利文献1)。
(2)在400~650℃的温度范围的玻璃基板上涂布含有有机聚硅氧烷、无机微粒和液状介质的涂布液,形成含有无机微粒的氧化硅膜的方法(参照专利文献2)。
现有技术文献
专利文献
专利文献1:国际公开第03/080530号
专利文献2:国际公开第2011/155545号
发明内容
发明所要解决的技术问题
但是,(1)的方法难以控制金属氧化物粒子的粒径。为此,难以得到具有设定的目标光学性能的玻璃基板。
(2)的方法能够使用符合设定目标的光学性能的所希望的粒径的无机微粒,但由于有机聚硅氧烷是非极性的,涂布液的液状介质被限定为非极性的。为此,为了使无机微粒不在非极性的液状介质中凝集,有另外实施疏水化等表面处理的限制。
本发明提供一种可以根据目标光学特性使用所希望的粒径的无机微粒、且无机微粒的选择范围大的带含有无机微粒的氧化硅膜的玻璃基板的制造方法。
解决技术问题所采用的技术方案
本发明为下述[1]、[2]的发明。
[1]在玻璃基板上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜的带含有无机微粒的氧化硅膜的玻璃基板的制造方法。以下,也将该[1]的制造方法称为本发明的实施方式1的方法。
在[1]的发明中,涂布上述涂布液时的玻璃基板的温度优选200~650℃。
此外,优选在上述含有无机微粒的氧化硅膜上进一步形成与上述无机微粒折射率不同的金属氧化物膜。
[2]具有在由熔融玻璃成形而成的玻璃带上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜的工序,和之后切断玻璃带的工序的带含有无机微粒的氧化硅膜的玻璃基板的制造方法。以下,也将该[2]的制造方法称为本发明的实施方式2的方法。
在[2]的发明中,涂布上述涂布液时的玻璃带的温度优选200~650℃。
此外,优选在浮法锡槽中将熔融玻璃成形为玻璃带,在浮法锡槽和退火工序之间或在退火工序中涂布上述涂布液。
此外,优选在玻璃带上的上述含有无机微粒的氧化硅膜上进一步形成与上述无机微粒折射率不同的金属氧化物膜。
发明的效果
如果采用本发明的带含有无机微粒的氧化硅膜的玻璃基板的制造方法,则可以使用所希望的粒径的无机微粒,且无机微粒的选择范围较广。
附图说明
图1是表示通过本发明的制造方法而得的带含有无机微粒的氧化硅膜的玻璃基板的一例的简单截面图。
图2是表示通过本发明的制造方法而得的带含有无机微粒的氧化硅膜的玻璃基板的另一例的简单截面图。
图3是表示玻璃制造装置的一例的示意图。
具体实施方式
本说明书中(聚)乙二醇指乙二醇或聚乙二醇。
本说明书中玻璃基板或玻璃带的温度为涂布涂布液一侧的表面温度。
本说明书中折射率为波长550nm的光的折射率。
本说明书中含有无机微粒的氧化硅膜的膜厚是根据在扫描型电子显微镜下观察带含有无机微粒的氧化硅膜的玻璃基板的截面而得的像进行计算的,是从玻璃基板上到无机微粒的顶点的距离的平均值。本说明书中金属氧化物膜的膜厚是根据在扫描型电子显微镜下观察具有金属氧化物膜的带含有无机微粒的氧化硅膜的玻璃基板的截面而得的像进行计算的。
本说明书中分散液中的平均一次粒径是通过动态散射法测定的平均一次粒径(中值粒径:50%粒径)。
<带含有无机微粒的氧化硅膜的玻璃基板>
图1是表示通过本发明的制造方法而得的带含有无机微粒的氧化硅膜的玻璃基板的一例的简单截面图。带含有无机微粒的氧化硅膜的玻璃基板1具有玻璃基板10,和形成于玻璃基板10的表面的、在表面上具有凹凸的含有无机微粒的氧化硅膜12。
(玻璃基板)
作为玻璃基板10的材料,可例举钠钙硅酸盐玻璃、硼硅酸盐玻璃、硅铝酸盐玻璃等。
在将带含有无机微粒的氧化硅膜的玻璃基板1作为有机EL元件用玻璃基板使用的情况下,玻璃基板10优选无碱玻璃、或在钠钙硅酸盐玻璃上涂覆了二氧化硅的玻璃。
玻璃基板10也可以在基板本体的表面上具有功能层。作为功能层,可例举底涂层、密合改善层、保护层等。底涂层具有作为碱金属阻挡层和宽频带的低折射率层的功能。作为底涂层,优选通过在基板本体的表面上涂布含有烷氧基硅烷或其水解产物(溶胶凝胶二氧化硅)的底涂用涂布液而形成的层。
此外,在本发明的实施方式2的方法中,在于玻璃带上形成含有无机微粒的氧化硅膜之前,也可以形成如上所述的底涂层、密合改善层、保护层等功能层。
(含有无机微粒的氧化硅膜)
含有无机微粒的氧化硅膜12是通过涂布后述的涂布液(即,第1涂布液)而形成的膜。具体而言,含有无机微粒的氧化硅膜12由配置于玻璃基板10的表面上的多个无机微粒14、和薄薄地覆盖无机微粒14和玻璃基板10的表面的氧化硅膜16构成,在表面上具有来源于无机微粒14的形状的凹凸。含有无机微粒的氧化硅膜12作为窗玻璃的防眩膜、有机EL元件用玻璃基板的光取出层、太阳能电池用覆盖玻璃的光封闭层有用。
含有无机微粒的氧化硅膜12的厚度优选100~5000nm,更优选200~1000nm。如果含有无机微粒的氧化硅膜12的厚度在100nm以上,则由光的散射产生的防眩效果、光取出效果、光封闭效果等良好。如果含有无机微粒的氧化硅膜12的厚度在5000nm以下,则在制膜上不花费过多的时间,生产方面不会发生问题。
玻璃基板10上无机微粒14的被覆率优选1~100%,更优选5~100%。将无机微粒14的被覆率作为无机微粒14的成膜效率的指标。如果无机微粒14的被覆率在1%以上,则由光的散射产生的防眩效果、光取出效果、光封闭效果等良好。
无机微粒14的被覆率如下所述求得。
使用接触式台阶仪,对测定长度1mm下含有无机微粒的氧化硅膜12的表面的凹凸形状进行测定,根据测定结果,取出存在着无机微粒14的部分的长度,由下式求出被覆率。
被覆率(%)=100×存在着无机微粒14的部分的长度(mm)/测定长度(1mm)。
带含有无机微粒的氧化硅膜的玻璃基板1的雾度优选0.5~100%,更优选2~100%。将带含有无机微粒的氧化硅膜的玻璃基板1的雾度作为光的散射的指标。如果带含有无机微粒的氧化硅膜的玻璃基板1的雾度在0.5%以上,则由光的散射产生的防眩效果、光取出效果、光封闭效果等良好。
(无机微粒)
作为无机微粒14,可例举金属氧化物粒子(也包括复合金属氧化物粒子)、金属粒子。可根据带含有无机微粒的氧化硅膜的玻璃基板1所要求的功能适当选择无机微粒14的种类。
在只考虑光的散射的情况下,作为无机微粒14的材料,从较为廉价的方面考虑,优选氧化硅。
在光的散射之外还在带含有无机微粒的氧化硅膜的玻璃基板1追加其他功能的情况下,作为无机微粒14的材料,以功能分类可例举以下材料。
紫外线遮蔽:氧化锌、氧化铈等。
红外线遮蔽:氧化铟锡(ITO)、氧化锑锡(ATO)、氧化钨、铒等。
防静电:ITO、ATO、银等。
光催化剂:氧化钛等。
波长变换:氧化锌、铕掺杂氧化锌、硫化锌、铕掺杂硫化锌、磷化铟、铋掺杂硫化钙、铕掺杂氟化钙、铕掺杂钒酸钇等。
作为无机微粒14的形状,可例举球状、粒状、棒状、念珠状、纤维状、薄片状、中空状、凝集体状、无定形状等。无机微粒14也可以是一个成分被其他成分所被覆的核-壳型粒子。此外,无机微粒14也可以由表面活性剂、高分子分散剂、硅烷偶联剂等进行表面处理。此外,无机微粒14对400~650℃的热为惰性物质,即,是在仅将无机微粒14的分散液作为涂布液使用的情况下并不形成膜,或成膜效率显著低下的物质。
(氧化硅膜)
氧化硅膜16是后述的涂布液中所含的烷氧基硅烷的水解产物的烧成物,起到将无机微粒14固定在玻璃基板10的表面上的粘合剂的作用。
(金属氧化物膜)
带含有无机微粒的氧化硅膜的玻璃基板1如图2所示,也可以在含有无机微粒的氧化硅膜12上还具有与无机微粒14折射率不同的金属氧化物膜18。金属氧化物膜18在表面上具有来源于无机微粒14的凹凸。
作为金属氧化物膜18,可例举氧化钛膜(折射率:2.5)、氧化锌膜(折射率:2.0)、氧化锡膜(折射率:2.0)、氧化硅膜(折射率:1.5)、氧化铝(折射率:1.8)等,在将氧化硅粒子用作无机微粒14的情况下,从使得由光的散射产生的防眩效果、光取出效果、光封闭效果等充分发挥的方面考虑,优选氧化钛膜、氧化锌膜、氧化锡膜。此外,通过将金属氧化物膜18设为氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、锡掺杂氧化铟(ITO)、铝掺杂氧化锌(AZO)、钾掺杂氧化锌(GZO)等透明导电膜,能够使其成为具有光封闭效果的透明导电膜。上述效果通过使用比无机微粒14折射率更高的金属氧化物膜18来有效发挥。当外部介质为空气(折射率=1)时,在金属氧化物膜18的折射率高于无机微粒14的情况下,散射特性增加。另一方面,在金属氧化物膜18的折射率低于无机微粒14的情况下,由于变成了折射率倾斜结构,因而透射率提高。这样,通过使金属氧化物膜的折射率变化,能够根据用途调整光学特性。
金属氧化物膜18的厚度优选100~5000nm,更优选200~1000nm。如果金属氧化物膜18的厚度在100nm以上,则由光的散射产生的防眩效果、光取出效果、光封闭效果等良好。如果金属氧化物膜18的厚度在5000nm以下,则在制膜上不花费过多时间,生产方面不会发生问题。膜厚如下测定。使用扫描型电子显微镜(日立高新技术株式会社(日立ハイテクノロジーズ社)制S-4300)进行膜的截面观察,在面外方向上10μm的范围内测定3个点的膜厚,求出其平均值。
<带含有无机微粒的氧化硅膜的玻璃基板的制造方法>
本发明的带含有无机微粒的氧化硅膜的玻璃基板的制造方法是,在玻璃基板或作为玻璃基板的玻璃带上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的第1涂布液,对烷氧基硅烷的水解产物进行烧成,在玻璃基板或玻璃带上形成含有无机微粒的氧化硅膜的方法。
在玻璃带上形成含有无机微粒的氧化硅膜的情况下,具体而言,可例举具有下述工序的方法。
该方法具有:在由熔融玻璃成形而成的玻璃带上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜的工序,和之后切断玻璃带的工序。
在本发明的带含有无机微粒的氧化硅膜的玻璃基板的制造方法中,可在玻璃基板或玻璃带上的含有无机微粒的氧化硅膜上涂布含有与无机微粒折射率不同的金属氧化物前体的第2涂布液,形成金属氧化物膜。
(玻璃基板)
作为玻璃基板的材料,可例举上述材料。此外,作为玻璃基板,在将熔融玻璃成形为玻璃带,对玻璃带进行退火,接着进行切断来制造玻璃基板的玻璃基板的制造方法中,为了适用在玻璃带上涂布涂布液而在玻璃带上形成含有无机微粒的氧化硅膜的方法,优选没有强化过的生板玻璃基板。
(第1涂布液)
第1涂布液含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种。
(无机微粒)
在将上述无机微粒预先分散在水或(聚)乙二醇而成的分散液状态下使用无机微粒。
分散液中无机微粒的平均一次粒径优选100~1000nm,更优选300~500nm。如果分散液中无机微粒的平均一次粒径为100~1000nm,则由光的散射而产生的防眩效果、光取出效果、光封闭效果等可发挥出来。
(烷氧基硅烷的水解产物)
烷氧基硅烷的水解产物是将烷氧基硅烷通过水和催化剂进行水解而得的。烷氧基硅烷的水解产物可以包括未反应的烷氧基硅烷。
作为烷氧基硅烷,可例举四烷氧基硅烷(四甲氧基硅烷、四乙氧基硅烷、四丙氧基硅烷、四丁氧基硅烷等)、单烷基三烷氧基硅烷(甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷、丙基三甲氧基硅烷、丙基三乙氧基硅烷等)、二烷基二烷氧基硅烷(二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、二乙基二甲氧基硅烷、二乙基二乙氧基硅烷、二丙基二甲氧基硅烷、二丙基二乙氧基硅烷等)、三烷基单烷氧基硅烷(三甲基甲氧基硅烷、三甲基乙氧基硅烷、三乙基甲氧基硅烷、三乙基乙氧基硅烷、三丙基甲氧基硅烷、三丙基乙氧基硅烷等)、单芳基三烷氧基硅烷(苯基三甲氧基硅烷、苯基三乙氧基硅烷等)、二芳基二烷氧基硅烷(二苯基二甲氧基硅烷、二苯基二乙氧基硅烷等)、三芳基单烷氧基硅烷(三苯基甲氧基硅烷、三苯基乙氧基硅烷等)、具有全氟聚醚基的烷氧基硅烷(全氟聚醚三乙氧基硅烷等)、具有全氟烷基的烷氧基硅烷(全氟乙基三乙氧基硅烷等)、具有乙烯基的烷氧基硅烷(乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷等)、具有环氧基的烷氧基硅烷(2-(3,4-环氧基环己基)乙基三甲氧基硅烷、3-环氧丙氧基丙基三甲氧基硅烷、3-环氧丙氧基丙基甲基二乙氧基硅烷、3-环氧丙氧基丙基三乙氧基硅烷等)、具有丙烯酰氧基的烷氧基硅烷(3-丙烯酰氧基丙基三甲氧基硅烷等)等。
作为烷氧基硅烷,从水解速度快、生产性高等方面来看,优选四烷氧基硅烷,更优选四乙氧基硅烷、四甲氧基硅烷。
烷氧基硅烷的水解中,使用酸或碱作为水和催化剂来进行。作为酸,可例举无机酸(硝酸、硫酸、盐酸等)、有机酸(甲酸、草酸、酒石酸、柠檬酸,一氯乙酸、二氯乙酸、三氯乙酸等)。作为碱,可例举氨、氢氧化钠、氢氧化钾等。作为催化剂,从长期保存性的方面来看,优选酸,此外,作为催化剂,优选不会阻碍无机微粒的分散的催化剂。
(液状介质)
作为第1涂布液的液状介质,使用水和(聚)乙二醇中的任一种或两种。在使用水和(聚)乙二醇以外的液状介质的情况下,含有无机微粒的氧化硅膜不在玻璃基板上成膜,或含有无机微粒的氧化硅膜的成膜效率显著降低。
作为第1涂布液的液状介质,从烷氧基硅烷的水解中需要水的方面考虑,优选只用水、或用水和(聚)乙二醇的混合物。此外,从含有无机微粒的氧化硅膜的成膜效率好的方面考虑,特别优选(聚)乙二醇和所需的最低限度的水的混合物。
作为(聚)乙二醇,可例举乙二醇、二乙二醇、三乙二醇、四乙二醇、分子量300以下的聚乙二醇等,从含有无机微粒的氧化硅膜的成膜效率良好的方面考虑,优选三乙二醇、四乙二醇,特别优选四乙二醇。
第1涂布液只要在不损害本发明的效果的范围内,可以含有水和(聚)乙二醇以外的液状介质。
(第1涂布液的组成)
第1涂布液的固体成分浓度(第1涂布液中的无机微粒和烷氧基硅烷的水解产物的总计浓度),从含有无机微粒的氧化硅膜的成膜效率和第1涂布液的粘度(处理性)的方面考虑,优选0.3~70质量%,更优选3~25质量%。
无机微粒的比例,在100质量%的第1涂布液的固体成分(第1涂布液中的无机微粒和烷氧基硅烷的水解产物的总计)中,优选1~60质量%,更优选3~30质量%。如果无机微粒的比例在1质量%以上,则会充分发挥来源于无机微粒的功能。如果无机微粒的比例在60质量%以下,则会抑制无机微粒凝集,可得到无机微粒均匀分散的膜。
烷氧基硅烷的水解产物(换算为SiO2的固体成分)的比例,在100质量%的第1涂布液的固体成分(第1涂布液中的无机微粒和烷氧基硅烷的水解产物的总计)中,优选40~99质量%,更优选70~97质量%。如果烷氧基硅烷的水解产物的比例在40质量%以上,则可使无机微粒以高效率进行成膜。如果烷氧基硅烷的水解产物的比例在99质量%以下,则会充分发挥来源于无机微粒的功能。
(第1涂布液的涂布)
作为第1涂布液的涂布方法,从能够以高生产效率制造带含有无机微粒的氧化硅膜的玻璃基板的方面来看,优选用喷嘴(例如喷枪等)来对第1涂布液进行喷雾的喷雾法。
作为喷雾法的具体涂布方法,可例举下述方法(i)、(ii)、(iii)等,从工序数少、能够以高生产效率制造带含有无机微粒的氧化硅膜的玻璃基板的方面来看,优选方法(ii)。
(i)从被固定了的玻璃基板上方移动喷嘴的同时,从喷嘴向玻璃基板喷雾第1涂布液的方法。
(ii)从喷嘴向沿一个方向移动的玻璃带喷雾第1涂布液的方法。
(i)在移动着的玻璃基板上方移动喷嘴的同时,或者将喷嘴固定,从喷嘴向玻璃基板喷雾第1涂布液的方法。
涂布第1涂布液时玻璃基板或玻璃带的温度优选200~650℃,更优选300~600℃。在该温度范围内的玻璃基板或玻璃带上对烷氧基硅烷的水解产物进行烧成,制得氧化硅。如果玻璃基板或玻璃带的温度在200℃以上,则由于玻璃基板或玻璃带上的烷氧基硅烷的水解产物可在短时间内烧成而生产性良好。本发明的实施方式2中,在使用通过浮法的玻璃基板的制造方法的情况下,如果玻璃带的温度为650℃以下,则由于玻璃带不存在于浮法锡槽内,因而在喷雾中污染槽内气氛的可能性小。
本发明的实施方式2中,在使用通过浮法的玻璃基板的制造方法的情况下,对于在浮法锡槽中将熔融玻璃进行成形而得的玻璃带,在浮法锡槽和退火工序之间或在退火工序中,优选在玻璃带的处于200~650℃的温度范围内的位置上喷雾第1涂布液。在以浮法制造玻璃基板的情况下,浮法锡槽紧后方位置的玻璃带的温度虽然根据玻璃基板的玻璃组成而不同,但通常为650℃左右,因此涂布第1涂布液的位置的玻璃带温度超过650℃并不现实。离开浮法锡槽的玻璃带在退火工序中进行退火,在退火工序中冷却至400℃以下。
(第2涂布液)
第2涂布液含有金属氧化物前体和根据需要使用的液状介质。
(金属氧化物前体)
作为金属氧化物前体,可例举如下。
氧化钛前体:钛醇盐、钛醇盐、乙酸钛、乙酰丙酮氧钛、乙酰丙酮钛、乙二胺四乙酸钛、乙基己酸钛、苯甲酸钛、乳酸钛、硫化钛、氟化钛、氯化钛、溴化钛、碘化钛等。
氧化锌前体:乙酸锌、乙酰丙酮锌、乙二胺四乙酸锌、乙基己酸锌、十八酸锌、苯甲酸锌、环烷酸锌、乳酸锌、硫化锌、硼酸锌、碳酸锌、氟化锌、氯化锌、溴化锌、碘化锌等。
氧化锡前体:乙酸锡、二乙酸二丁锡、乙酰丙酮锡、乙二胺四乙酸锡、乙基己酸锡、硫化锡、氟化锡、氯化锡、溴化锡、碘化锡等。
氧化硅前体:烷氧基硅烷的水解产物、有机聚硅氧烷(硅油等)等。
(液状介质)
第2涂布液的液状介质可根据金属氧化物前体进行适当选择。
(第2涂布液的组成)
第2涂布液的固体成分浓度(第2涂布液中的金属氧化物前体的浓度)可根据金属氧化物前体进行适当选择。
(第2涂布液的涂布)
作为第2涂布液的涂布方法,从能够以高生产效率制造带含有无机微粒的氧化硅膜的玻璃基板的方面来看,优选用喷嘴(例如喷枪等)来对第2涂布液进行喷雾的喷雾法。
作为喷雾法的具体涂布方法,可例举上述方法(i)、(ii)、(iii)等,从工序数少、能够以高生产效率制造带含有无机微粒的氧化硅膜的玻璃基板的方面来看,优选方法(ii)。
涂布第2涂布液时玻璃基板或玻璃带的温度优选200~650℃,更优选300~600℃。
本发明的实施方式2中,在使用通过浮法的玻璃基板的制造方法的情况下,作为第2涂布液的涂布方法,对于在浮法锡槽中将熔融玻璃进行成形而得的玻璃带,在浮法锡槽和退火工序之间或在退火工序中,优选在玻璃带的处于200~650℃的温度范围内的位置上喷雾第2涂布液。
(玻璃制造装置)
图3是表示玻璃制造装置的一例的示意图。
玻璃制造装置20具备熔解窑22、浮法锡槽26、退火窑28、和空气式的第1喷枪34;熔解窑22将玻璃原料熔解,制成熔融玻璃30;浮法锡槽26以使供自熔解窑22的熔融玻璃30浮在熔融锡24的表面上的方式将熔融玻璃30制成成为玻璃基板的玻璃带32;退火窑28将该玻璃带32退火;第1喷枪34对设置在浮法锡槽26的出口与退火窑28的入口之间、且位于玻璃带32上方570mm的高度的第1涂布液进行涂布。此外,还优选在第1喷枪34的后段设置涂布第2涂布液的第2喷枪36。
在以规定的搬运速度进行移动的玻璃带32上的、浮法锡槽26和退火窑28之间的玻璃带32的表面温度为200~650℃的位置上,由第1喷枪34喷雾第1涂布液,在玻璃带32上形成含有无机微粒的氧化硅膜,接着,在含有无机微粒的氧化硅膜上,由第2喷枪36喷雾第2涂布液,在含有无机微粒的氧化硅膜上形成金属氧化物膜。
离开退火窑28的玻璃带32通过并未图示的切断装置切断成为玻璃基板。
(作用效果)
在以上说明的本发明的带含有无机微粒的氧化硅膜的玻璃基板的制造方法中,由于在玻璃基板或玻璃带上涂布含有无机微粒的涂布液,因而可以根据目标光学特性使用所希望的粒径的无机微粒。其结果是,能够得到具有设定的目标光学性能的带含有无机微粒的氧化硅膜的玻璃基板。
此外,在以上说明的本发明的带含有无机微粒的氧化硅膜的玻璃基板的制造方法中,由于作为涂布液中所含的氧化硅的前体,使用了烷氧基硅烷的水解产物来代替以往的有机聚硅氧烷,因此作为液状介质可使用极性介质。由于与能够分散在非极性的液状介质中的无机微粒相比,能够分散在极性液状介质中的无机微粒的种类更多,且不需要实施疏水化等表面处理,因此无机微粒的选择范围变大。
另外,虽然作为氧化硅前体的烷氧基硅烷的水解产物与以往的有机聚硅氧烷相比更易在高温下气化,在玻璃基板或玻璃带上的成膜效率有劣化的倾向,但由于在本发明中,作为液状介质使用了水和(聚)乙二醇中的任一种或两种,因此含有无机微粒的氧化硅膜在玻璃基板或玻璃带上的成膜效率良好。
此外,通过在含有无机微粒的氧化硅膜上形成金属氧化物膜,可以制造提高了由光的散射而带来的防眩效果、光取出效果、光封闭效果等的带含有无机微粒的氧化硅膜的玻璃基板。
实施例
以下,通过实施例对本发明进行更详细的说明,但本发明并不局限于这些实施例。
例8~19是实施例,例1~7是比较例。
(被覆率)
作为成膜效率的指标,如下求出玻璃基板上无机微粒的被覆率。
使用接触式台阶仪(阿瓦克公司(ALVAC社)制,型号DEKTAK150),测定在测定长度1mm中含有无机微粒的氧化硅膜的表面凹凸形状。根据测定结果,取出存在着无机微粒的部分的长度,由下式求出被覆率。
被覆率(%)=100×存在着无机微粒的部分的长度(mm)/测定长度(1mm)。
(雾度)
作为光的散射的指标,使用雾度计(毕克-加特纳公司(ビックガードナー社)制,型号Haze Gard Plus E-4725)测定带含有无机微粒的氧化硅膜的玻璃基板的雾度。
[例1~11]
在表1所示的液状介质中加入四乙氧基硅烷(关东化学社(関東化学社)制,SiO2换算固体成分:99.9质量%)使其在第1涂布液中达到30质量%,再加入硝酸(70质量%水溶液)使其在第1涂布液中达到0.35质量%,搅拌1小时。接着,加入硅溶胶(日产化学工业(日産化学工業)制,型号MP-4540M,平均一次粒径:450nm,固体成分:40.7质量%,介质:水)使其在第1涂布液中达到2.5质量%,搅拌5~10分钟,得到SiO2换算固体成分浓度为9.65质量%,固体成分中的氧化硅粒子的比例为10.4质量%,固体成分中的烷氧基硅烷的水解产物(SiO2换算固体成分)的比例为89.6质量%的例1~例11的第1涂布液。
作为涂布装置使用KM-100(SPD研究所株式会社(SPD研究所社)制)。作为玻璃基板,使用10cm×10cm×4mm的高透射玻璃(旭硝子株式会社(旭硝子社)制)。
将玻璃基板载置在工作台上,在工作台背面侧上以与工作台非接触的方式设置加热器。通过加热器的放射热,隔着工作台将玻璃基板加热至600℃。玻璃基板的温度通过使玻璃基板的一个侧面接触热电偶来进行测定。为了在用喷枪喷雾第1涂布液之前对玻璃基板进行足够时间的加热,可以将此处测定的温度视为与玻璃基板的表面温度几乎相同。
在将玻璃基板升温至600℃后,由配置于玻璃基板上方的喷枪向玻璃基板上喷雾第1涂布液。在由喷枪喷雾第1涂布液时,调节对喷枪的送液圧力,使送液速度达到0.3~0.6mL/秒,喷雾压力设为0.1MPa。涂布时间设为15秒。另外,在用防爆装置包围工作台、玻璃基板、喷枪的状态下进行喷雾,不调整气氛温度。
得到的例1~11的带含有氧化硅粒子的氧化硅膜的玻璃基板的被覆率、雾度示于表1。
[表1]
与使用其他液状介质的例1~7相比,使用水、或(聚)乙二醇作为主要液状介质的本发明实施例的例8~11显示了高粒子被覆率。此外,雾度也随之上升,显示了高光散射特性。
[例12~14]
除了玻璃基板的温度如表2所示变更为300℃、400℃、500℃以外,使用例10的液状介质,与例1~11相同地得到带含有氧化硅粒子的氧化硅膜的玻璃基板。得到的带含有氧化硅粒子的氧化硅膜的玻璃基板的被覆率、雾度示于表2。
[表2]
[例15~19]
在三乙二醇中加入四乙氧基硅烷(关东化学社制,SiO2换算固体成分:99.9质量%)使其在第1涂布液中达到30质量%,再加入硝酸(70质量%水溶液)使其在第1涂布液中达到0.35质量%,搅拌1小时。接着,加入硅溶胶(日产化学工业制,型号MP-2040,平均一次粒径:190nm,固体成分:40质量%,介质:水)使其在第1涂布液中达到2.5质量%,搅拌5~10分钟,得到SiO2换算固体成分浓度为9.65质量%,固体成分中的氧化硅粒子的比例为10.4质量%,固体成分中的烷氧基硅烷的水解产物(SiO2换算固体成分)的比例为89.6质量%的例15~例19的第1涂布液。
在正癸烷中加入硅油(信越有机硅株式会社(信越シリコーン社)制,X-22-7322)使其在第2涂布液中达到70质量%,搅拌10分钟,得到例16的第2涂布液。
在乙酰丙酮中加入四丁醇钛使其在第2涂布液中达到20质量%,搅拌1小时,得到例17的第2涂布液。
在N,N-二甲基甲酰胺中加入乙酸锌氢化物(日文:ジンクアセテートジヒドライド)使其在第2涂布液中达到20质量%,搅拌30分钟,得到例18的第2涂布液。
在N,N-二甲基甲酰胺中加入二乙酸二丁基锡(氧化锡前体)使其在第2涂布液中达到20质量%,搅拌10分钟,得到例19的第2涂布液。
与例1相同,在将玻璃基板升温至600℃后,由配置于玻璃基板上方的喷枪向玻璃基板上喷雾第1涂布液。在由喷枪喷雾第1涂布液时,调节对喷枪的送液圧力,使送液速度达到0.3~0.6mL/秒,喷雾压力设为0.1MPa。涂布时间设为15~30秒。
对例15中仅形成了含有氧化硅粒子的氧化硅膜的玻璃基板进行评价。雾度示于表3。
例16~19中,形成了含有氧化硅粒子的氧化硅膜后,继续使用上述各第2涂布液,如下所述进一步形成金属氧化物膜。
将刚刚形成了含有氧化硅粒子的氧化硅膜的玻璃基板维持在600℃,由配置于玻璃基板上方的喷枪在含有氧化硅粒子的氧化硅膜上喷雾第2涂布液。在由喷枪喷雾第2涂布液时,调节对喷枪的送液圧力,使送液速度达到0.3~0.6mL/秒,喷雾压力设为0.1MPa。涂布时间设为15~30秒。
对在含有氧化硅粒子的氧化硅膜上形成了金属氧化物膜的例16~例19的玻璃基板进行评价。雾度示于表3。
[表3]
与仅形成了含有氧化硅粒子的氧化硅膜的玻璃基板(例15)相比,进一步形成了与氧化硅粒子折射率不同的金属氧化物膜的玻璃基板(例17~19)的雾度大幅提高。另外,进一步形成了与氧化硅粒子折射率相同的氧化硅膜的玻璃基板(例16)没有发现雾度的提高。
产业上利用的可能性
由本发明的制造方法而得的带含有无机微粒的氧化硅膜的玻璃基板,作为具有防眩效果的窗玻璃、具有光取出效果的有机EL元件用玻璃基板、具有光封闭效果的太阳能电池用覆盖玻璃等有用。
这里引用2012年4月24日提出申请的日本专利申请2012-099166号的说明书、权利要求书、附图和摘要的全部内容作为本发明的说明书的揭示。
符号说明
1 带含有无机微粒的氧化硅膜的玻璃基板
10 玻璃基板
12 含有无机微粒的氧化硅膜
14 无机微粒
16 氧化硅膜
18 金属氧化物膜
20 玻璃制造装置
22 熔解窑
24 熔融锡
26 浮法锡槽
28 退火窑
30 熔融玻璃
32 玻璃带
34 第1喷枪
36 第2喷枪
Claims (7)
1.一种带含有无机微粒的氧化硅膜的玻璃基板的制造方法,其特征在于,在玻璃基板上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜。
2.如权利要求1所述的制造方法,其特征在于,涂布所述涂布液时的玻璃基板的温度为200~650℃。
3.如权利要求1或2所述的制造方法,其特征在于,在所述含有无机微粒的氧化硅膜上进一步形成与所述无机微粒折射率不同的金属氧化物膜。
4.一种带含有无机微粒的氧化硅膜的玻璃基板的制造方法,其特征在于,具有在由熔融玻璃成形而成的玻璃带上涂布含有无机微粒、烷氧基硅烷的水解产物、水和(聚)乙二醇中任一种或两种的涂布液,形成含有无机微粒的氧化硅膜的工序,和之后切断玻璃带的工序。
5.如权利要求4所述的制造方法,其特征在于,涂布所述涂布液时的玻璃带的温度为200~650℃。
6.如权利要求4或5所述的制造方法,其特征在于,在浮法锡槽中将熔融玻璃成形为玻璃带,在浮法锡槽和退火工序之间或者退火工序中涂布所述涂布液。
7.如权利要求4~6中任一项所述的制造方法,其特征在于,在玻璃带上的所述含有无机微粒的氧化硅膜上进一步形成与所述无机微粒折射率不同的金属氧化物膜。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-099166 | 2012-04-24 | ||
JP2012099166 | 2012-04-24 | ||
PCT/JP2013/061947 WO2013161827A1 (ja) | 2012-04-24 | 2013-04-23 | 無機微粒子含有酸化ケイ素膜付ガラス基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104245613A true CN104245613A (zh) | 2014-12-24 |
Family
ID=49483136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380021597.1A Pending CN104245613A (zh) | 2012-04-24 | 2013-04-23 | 带含有无机微粒的氧化硅膜的玻璃基板的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150030778A1 (zh) |
EP (1) | EP2842920A4 (zh) |
JP (1) | JPWO2013161827A1 (zh) |
CN (1) | CN104245613A (zh) |
TW (1) | TW201402496A (zh) |
WO (1) | WO2013161827A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107793039A (zh) * | 2017-11-13 | 2018-03-13 | 东旭集团有限公司 | 抗冲击钢化玻璃及其制备方法和显示终端 |
CN108139506A (zh) * | 2015-07-31 | 2018-06-08 | 日产化学工业株式会社 | 适合于移动显示设备的玻璃盖片等的玻璃基板 |
CN108328936A (zh) * | 2017-09-15 | 2018-07-27 | 重庆市中光电显示技术有限公司 | 用于触摸屏的自清洁防指纹盖板玻璃及其制备方法 |
CN112340966A (zh) * | 2020-11-18 | 2021-02-09 | 安徽鸿程光电有限公司 | 防眩光玻璃及生产方法、装置、有该玻璃的电子显示设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6237322B2 (ja) * | 2014-02-21 | 2017-11-29 | 旭硝子株式会社 | 防眩膜付き物品の製造方法 |
WO2017029735A1 (ja) * | 2015-08-19 | 2017-02-23 | 旭硝子株式会社 | 防眩膜付き物品、その製造方法および画像表示装置 |
US10550031B2 (en) | 2016-03-08 | 2020-02-04 | Central Glass Company, Limited | Glass window having a luminous capability |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01131088A (ja) * | 1987-11-17 | 1989-05-23 | Seiko Epson Corp | 合成石英コーティング法 |
EP1524247A1 (en) * | 2003-10-15 | 2005-04-20 | Asahi Glass Company, Limited | Infrared shielding film-coated glass and process for its production |
US20050089693A1 (en) * | 2002-03-26 | 2005-04-28 | Akira Fujisawa | Glass substrate and method of manufacturing the same |
US20050144981A1 (en) * | 2002-01-31 | 2005-07-07 | Nippon Sheet Glass Company, Limited | Method of manufacturing glass sheet with thin film and the glass sheet |
CN101010602A (zh) * | 2004-08-26 | 2007-08-01 | 3M创新有限公司 | 防炫光涂料和防炫光制品 |
WO2011155545A1 (ja) * | 2010-06-11 | 2011-12-15 | 旭硝子株式会社 | 無機微粒子含有酸化ケイ素膜付ガラス基板の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005194169A (ja) * | 2003-10-15 | 2005-07-21 | Asahi Glass Co Ltd | 赤外線遮蔽膜付きガラスおよびその製造方法 |
EP2141209A4 (en) * | 2007-05-08 | 2012-07-18 | Central Glass Co Ltd | MANUALLY APPLICABLE COATING LIQUID FOR SOL-GEL LAYERING |
WO2011090035A1 (ja) * | 2010-01-19 | 2011-07-28 | 旭硝子株式会社 | 撥水性基体およびその製造方法 |
JP5784528B2 (ja) * | 2011-11-28 | 2015-09-24 | 日本板硝子株式会社 | 防眩性ガラス基板およびその製造方法 |
-
2013
- 2013-04-23 EP EP13781896.9A patent/EP2842920A4/en not_active Withdrawn
- 2013-04-23 WO PCT/JP2013/061947 patent/WO2013161827A1/ja active Application Filing
- 2013-04-23 CN CN201380021597.1A patent/CN104245613A/zh active Pending
- 2013-04-23 JP JP2014512618A patent/JPWO2013161827A1/ja active Pending
- 2013-04-24 TW TW102114588A patent/TW201402496A/zh unknown
-
2014
- 2014-10-15 US US14/515,270 patent/US20150030778A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01131088A (ja) * | 1987-11-17 | 1989-05-23 | Seiko Epson Corp | 合成石英コーティング法 |
US20050144981A1 (en) * | 2002-01-31 | 2005-07-07 | Nippon Sheet Glass Company, Limited | Method of manufacturing glass sheet with thin film and the glass sheet |
US20050089693A1 (en) * | 2002-03-26 | 2005-04-28 | Akira Fujisawa | Glass substrate and method of manufacturing the same |
EP1524247A1 (en) * | 2003-10-15 | 2005-04-20 | Asahi Glass Company, Limited | Infrared shielding film-coated glass and process for its production |
CN101010602A (zh) * | 2004-08-26 | 2007-08-01 | 3M创新有限公司 | 防炫光涂料和防炫光制品 |
WO2011155545A1 (ja) * | 2010-06-11 | 2011-12-15 | 旭硝子株式会社 | 無機微粒子含有酸化ケイ素膜付ガラス基板の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108139506A (zh) * | 2015-07-31 | 2018-06-08 | 日产化学工业株式会社 | 适合于移动显示设备的玻璃盖片等的玻璃基板 |
CN108139506B (zh) * | 2015-07-31 | 2019-11-15 | 日产化学工业株式会社 | 适合于移动显示设备的玻璃盖片等的玻璃基板 |
CN108328936A (zh) * | 2017-09-15 | 2018-07-27 | 重庆市中光电显示技术有限公司 | 用于触摸屏的自清洁防指纹盖板玻璃及其制备方法 |
CN108328936B (zh) * | 2017-09-15 | 2020-10-20 | 重庆市中光电显示技术有限公司 | 用于触摸屏的自清洁防指纹盖板玻璃及其制备方法 |
CN107793039A (zh) * | 2017-11-13 | 2018-03-13 | 东旭集团有限公司 | 抗冲击钢化玻璃及其制备方法和显示终端 |
CN112340966A (zh) * | 2020-11-18 | 2021-02-09 | 安徽鸿程光电有限公司 | 防眩光玻璃及生产方法、装置、有该玻璃的电子显示设备 |
Also Published As
Publication number | Publication date |
---|---|
US20150030778A1 (en) | 2015-01-29 |
TW201402496A (zh) | 2014-01-16 |
JPWO2013161827A1 (ja) | 2015-12-24 |
EP2842920A4 (en) | 2016-03-30 |
EP2842920A1 (en) | 2015-03-04 |
WO2013161827A1 (ja) | 2013-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104245613A (zh) | 带含有无机微粒的氧化硅膜的玻璃基板的制造方法 | |
JP3700358B2 (ja) | 防曇防汚ガラス物品 | |
WO2009107665A1 (ja) | 水酸化フッ化マグネシウム含有オルガノゾルおよびその製造方法 | |
TW201606357A (zh) | 附防眩膜之基材及物品 | |
WO2014061606A1 (ja) | 防汚性反射防止膜、物品およびその製造方法 | |
JPWO2015041257A1 (ja) | 低反射膜付き強化ガラス板およびその製造方法 | |
WO2015186753A1 (ja) | 機能膜付き化学強化ガラス板、その製造方法および物品 | |
JP2009531264A (ja) | 元の表面の組成を変えることによる機能性ガラス表面の形成方法 | |
JP2015049319A (ja) | 透明基材と防汚性反射防止膜とを備える物品およびその製造方法 | |
JPWO2016051750A1 (ja) | 低反射コーティング、ガラス板、ガラス基板、及び光電変換装置 | |
JP2007121786A (ja) | コーティング液の製造方法、およびそのコーティング液を用いた反射防止膜の製造方法 | |
WO2015001979A1 (ja) | 塗膜付き基板の製造方法 | |
JP2006342055A (ja) | 酸化チタン薄膜被覆ガラス板の製造方法、その方法で製造されたガラス板及びその用途 | |
WO2011155545A1 (ja) | 無機微粒子含有酸化ケイ素膜付ガラス基板の製造方法 | |
WO2011093484A1 (ja) | 親水性低反射部材 | |
JP2013160799A (ja) | 低反射膜付き物品の製造方法 | |
JP4387313B2 (ja) | 酸化チタン薄膜で被覆されたガラス板の製造方法 | |
JP2001058851A (ja) | 導電膜付きガラス板およびこれを用いたガラス物品 | |
JP2002316837A (ja) | ガラス板およびそれを用いた太陽電池 | |
JP3886759B2 (ja) | 酸化チタン薄膜被覆ガラス板の製造方法 | |
JP2005330172A (ja) | ガラス板およびその製造方法、低反射性透明ガラス板、低反射性透明導電基板およびその製造方法、ならびに、低反射性透明導電基板を用いた光電変換素子 | |
JP2007099828A (ja) | コーティング材組成物及び塗装品 | |
JP2013121893A (ja) | 低反射膜付きガラスの製造方法 | |
JP4725074B2 (ja) | コーティング材組成物及び塗装品 | |
JP4438594B2 (ja) | コーティング材組成物及び塗装品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |