CN104183611B - 固态成像装置和电子设备 - Google Patents

固态成像装置和电子设备 Download PDF

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Publication number
CN104183611B
CN104183611B CN201410208812.5A CN201410208812A CN104183611B CN 104183611 B CN104183611 B CN 104183611B CN 201410208812 A CN201410208812 A CN 201410208812A CN 104183611 B CN104183611 B CN 104183611B
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pixel
light
region
imaging device
isolation
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CN104183611A (zh
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冈崎裕美
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN201410208812.5A 2013-05-24 2014-05-16 固态成像装置和电子设备 Active CN104183611B (zh)

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JP2013-109636 2013-05-24
JP2013109636A JP6130221B2 (ja) 2013-05-24 2013-05-24 固体撮像装置、および電子機器

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Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6130221B2 (ja) * 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
KR102309883B1 (ko) * 2014-08-29 2021-10-06 삼성전자주식회사 광전 변환 소자 및 이를 포함하는 이미지 센서
JP6339032B2 (ja) * 2015-02-19 2018-06-06 東京エレクトロン株式会社 遮光体を含む光学装置の製造方法、および記憶媒体
JPWO2016136502A1 (ja) * 2015-02-26 2017-12-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子装置
JP2017005111A (ja) * 2015-06-10 2017-01-05 ソニー株式会社 固体撮像装置及び電子機器
US10446695B2 (en) 2015-10-21 2019-10-15 United Silicone Carbide, Inc. Planar multi-implanted JFET
JP6754157B2 (ja) 2015-10-26 2020-09-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI785618B (zh) * 2016-01-27 2022-12-01 日商新力股份有限公司 固體攝像元件及電子機器
JP2017168566A (ja) * 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
JP6915608B2 (ja) * 2016-03-29 2021-08-04 ソニーグループ株式会社 固体撮像装置、及び電子機器
US10983339B2 (en) * 2016-08-09 2021-04-20 Sony Corporation Solid-state imaging element, pupil correction method for solid-state imaging element, imaging device, and information processing device
JP6899070B2 (ja) 2016-10-28 2021-07-07 ソニーグループ株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
KR102699535B1 (ko) 2016-12-29 2024-09-02 삼성전자주식회사 이미지 센서
JP7079739B2 (ja) * 2017-02-17 2022-06-02 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
JP2018160485A (ja) 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
KR102778807B1 (ko) * 2017-05-29 2025-03-12 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기
US11075242B2 (en) * 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
CN108183116A (zh) * 2018-01-11 2018-06-19 德淮半导体有限公司 图像传感器及其制造方法
JP7250427B2 (ja) * 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体
JP6779929B2 (ja) * 2018-02-09 2020-11-04 キヤノン株式会社 光電変換装置および機器
JP6933157B2 (ja) * 2018-02-16 2021-09-08 住友電気工業株式会社 赤外線受光装置及び赤外線受光装置を作製する方法
CN108321165A (zh) * 2018-03-15 2018-07-24 德淮半导体有限公司 形成图像传感器的方法
CN110729314A (zh) * 2018-07-17 2020-01-24 联华电子股份有限公司 光学感测装置
JP7086783B2 (ja) * 2018-08-13 2022-06-20 株式会社東芝 固体撮像装置
JP7182968B2 (ja) * 2018-09-12 2022-12-05 キヤノン株式会社 光電変換装置および機器
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
CN109545812A (zh) * 2018-11-30 2019-03-29 德淮半导体有限公司 图像传感器及其形成方法
CN109585481B (zh) * 2018-12-03 2021-04-06 德淮半导体有限公司 图像传感器结构及其制备方法
JP7555703B2 (ja) * 2019-02-25 2024-09-25 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2021040088A (ja) * 2019-09-05 2021-03-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
KR102789681B1 (ko) * 2019-11-13 2025-04-01 에스케이하이닉스 주식회사 이미지 센서
TWI869504B (zh) * 2019-12-13 2025-01-11 日商索尼半導體解決方案公司 攝像裝置及電子機器
US11469264B2 (en) * 2020-01-30 2022-10-11 Omnivision Technologies, Inc. Flare-blocking image sensor
US11393861B2 (en) * 2020-01-30 2022-07-19 Omnivision Technologies, Inc. Flare-suppressing image sensor
KR20220045810A (ko) * 2020-10-06 2022-04-13 삼성전자주식회사 이미지 센서
US12159886B2 (en) * 2021-03-31 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unequal CMOS image sensor pixel size to boost quantum efficiency
DE112022002213T5 (de) * 2021-04-20 2024-03-21 Sony Semiconductor Solutions Corporation Lichtdetektionseinrichtung und elektronische Vorrichtung
US20250040278A1 (en) * 2021-12-13 2025-01-30 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic device
US20230352508A1 (en) * 2022-04-29 2023-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor structure for crosstalk reduction
JP2023179207A (ja) * 2022-06-07 2023-12-19 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2024115123A (ja) * 2023-02-14 2024-08-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
JP2024163563A (ja) * 2023-05-12 2024-11-22 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4707885B2 (ja) 2001-06-26 2011-06-22 浜松ホトニクス株式会社 光検出素子
JP4972838B2 (ja) 2001-09-12 2012-07-11 ソニー株式会社 固体撮像素子及びその製造方法
JP4123060B2 (ja) * 2003-06-11 2008-07-23 ソニー株式会社 固体撮像素子及びその製造方法
JP2005019573A (ja) * 2003-06-25 2005-01-20 Sanyo Electric Co Ltd 固体撮像装置および固体撮像装置の製造方法
US6903391B2 (en) * 2003-09-10 2005-06-07 Fuji Photo Film Co., Ltd. Solid state image pickup device
JP4322166B2 (ja) 2003-09-19 2009-08-26 富士フイルム株式会社 固体撮像素子
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
US20070284687A1 (en) * 2006-06-13 2007-12-13 Rantala Juha T Semiconductor optoelectronics devices
JP2008078258A (ja) 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
US7423306B2 (en) * 2006-09-27 2008-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor devices
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
JP5104036B2 (ja) * 2007-05-24 2012-12-19 ソニー株式会社 固体撮像素子とその製造方法及び撮像装置
JP4621719B2 (ja) * 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
KR100883038B1 (ko) * 2007-10-15 2009-02-09 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP2009164385A (ja) 2008-01-08 2009-07-23 Fujifilm Corp 裏面照射型撮像素子
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
JP4978614B2 (ja) * 2008-11-25 2012-07-18 ソニー株式会社 固体撮像装置
US20100144084A1 (en) * 2008-12-05 2010-06-10 Doan Hung Q Optical waveguide structures for an image sensor
JP5262823B2 (ja) 2009-02-23 2013-08-14 ソニー株式会社 固体撮像装置および電子機器
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP2010225818A (ja) 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP4856204B2 (ja) 2009-03-24 2012-01-18 株式会社東芝 固体撮像装置の製造方法
JP2010245100A (ja) * 2009-04-01 2010-10-28 Nikon Corp 固体撮像素子
JP2011066204A (ja) 2009-09-17 2011-03-31 Fujifilm Corp 固体撮像素子及びその製造方法並びに撮像装置
JP2011103359A (ja) 2009-11-10 2011-05-26 Sharp Corp 固体撮像素子および電子情報機器
JP5172819B2 (ja) 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5595298B2 (ja) * 2010-04-06 2014-09-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP2011238853A (ja) * 2010-05-12 2011-11-24 Panasonic Corp 固体撮像装置およびその製造方法
JPWO2011148574A1 (ja) * 2010-05-28 2013-07-25 パナソニック株式会社 固体撮像装置
JP2012028459A (ja) 2010-07-21 2012-02-09 Sony Corp 半導体装置、固体撮像装置、半導体装置の製造方法、固体撮像装置の製造方法、電子機器
JP5682174B2 (ja) * 2010-08-09 2015-03-11 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
JP2012074521A (ja) * 2010-09-28 2012-04-12 Sony Corp 固体撮像装置の製造方法、固体撮像装置、および電子機器
JP2012124318A (ja) * 2010-12-08 2012-06-28 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
JP2012129358A (ja) * 2010-12-15 2012-07-05 Toshiba Corp 固体撮像装置及びその製造方法
FR2969385A1 (fr) * 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Capteur d'images a taux d'intermodulation réduit
JP2012169530A (ja) * 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5708025B2 (ja) 2011-02-24 2015-04-30 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5810551B2 (ja) * 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US8742525B2 (en) * 2011-03-14 2014-06-03 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
KR20120135627A (ko) * 2011-06-07 2012-12-17 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2013098503A (ja) * 2011-11-07 2013-05-20 Toshiba Corp 固体撮像素子
US9264676B2 (en) * 2012-01-06 2016-02-16 Microsoft Technology Licensing, Llc Broadband imager
KR20130134292A (ko) * 2012-05-30 2013-12-10 삼성전자주식회사 이미지 센서, 상기 이미지 센서를 포함하는 이미지 처리 시스템 및 상기 이미지 센서의 제조 방법
US9105546B2 (en) * 2012-09-19 2015-08-11 Semiconductor Components Industries, Llc Imaging systems with backside illuminated near infrared imaging pixels
JP6130221B2 (ja) 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
US9209320B1 (en) * 2014-08-07 2015-12-08 Omnivision Technologies, Inc. Method of fabricating a single photon avalanche diode imaging sensor
KR102546550B1 (ko) * 2016-06-24 2023-06-23 에스케이하이닉스 주식회사 딥 트렌치들 내의 전달 게이트들을 갖는 이미지 센서
JP2018006443A (ja) * 2016-06-29 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019086070A (ja) 2017-11-06 2019-06-06 株式会社Ｓｏｋｅｎ コネクティングロッド

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US10319769B2 (en) 2019-06-11
JP2014229810A (ja) 2014-12-08
US20140346628A1 (en) 2014-11-27
US11569286B2 (en) 2023-01-31
US9893106B2 (en) 2018-02-13
US20200212084A1 (en) 2020-07-02
US10615207B2 (en) 2020-04-07
US11894406B2 (en) 2024-02-06
US20210217789A1 (en) 2021-07-15
CN106847843B (zh) 2020-05-19
JP6130221B2 (ja) 2017-05-17
US9570501B2 (en) 2017-02-14
US20230126548A1 (en) 2023-04-27
CN104183611A (zh) 2014-12-03
CN106847843A (zh) 2017-06-13
US11271025B2 (en) 2022-03-08
US20170179171A1 (en) 2017-06-22
US20160211304A1 (en) 2016-07-21
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