JP6130221B2 - 固体撮像装置、および電子機器 - Google Patents

固体撮像装置、および電子機器 Download PDF

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Publication number
JP6130221B2
JP6130221B2 JP2013109636A JP2013109636A JP6130221B2 JP 6130221 B2 JP6130221 B2 JP 6130221B2 JP 2013109636 A JP2013109636 A JP 2013109636A JP 2013109636 A JP2013109636 A JP 2013109636A JP 6130221 B2 JP6130221 B2 JP 6130221B2
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Prior art keywords
solid
imaging device
state imaging
light
pixel
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Japanese (ja)
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JP2014229810A5 (enExample
JP2014229810A (ja
Inventor
裕美 岡崎
裕美 岡崎
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Sony Corp
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Sony Corp
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Priority to JP2013109636A priority Critical patent/JP6130221B2/ja
Priority to CN201410208812.5A priority patent/CN104183611B/zh
Priority to CN201610970914.XA priority patent/CN106847843B/zh
Priority to US14/279,632 priority patent/US9570501B2/en
Publication of JP2014229810A publication Critical patent/JP2014229810A/ja
Publication of JP2014229810A5 publication Critical patent/JP2014229810A5/ja
Priority to US15/084,912 priority patent/US10319769B2/en
Priority to US15/449,662 priority patent/US9893106B2/en
Application granted granted Critical
Publication of JP6130221B2 publication Critical patent/JP6130221B2/ja
Priority to US15/850,947 priority patent/US10615207B2/en
Priority to US16/818,080 priority patent/US11271025B2/en
Priority to US17/216,102 priority patent/US11569286B2/en
Priority to US18/145,221 priority patent/US11894406B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2013109636A 2013-05-24 2013-05-24 固体撮像装置、および電子機器 Active JP6130221B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2013109636A JP6130221B2 (ja) 2013-05-24 2013-05-24 固体撮像装置、および電子機器
CN201610970914.XA CN106847843B (zh) 2013-05-24 2014-05-16 成像装置和电子设备
US14/279,632 US9570501B2 (en) 2013-05-24 2014-05-16 Sold-state imaging device and electronic apparatus
CN201410208812.5A CN104183611B (zh) 2013-05-24 2014-05-16 固态成像装置和电子设备
US15/084,912 US10319769B2 (en) 2013-05-24 2016-03-30 Solid-state imaging device and electronic apparatus
US15/449,662 US9893106B2 (en) 2013-05-24 2017-03-03 Solid-state imaging device and electronic apparatus
US15/850,947 US10615207B2 (en) 2013-05-24 2017-12-21 Solid-state imaging device and electronic apparatus
US16/818,080 US11271025B2 (en) 2013-05-24 2020-03-13 Solid-state imaging device and electronic apparatus
US17/216,102 US11569286B2 (en) 2013-05-24 2021-03-29 Solid-state imaging device and electronic apparatus
US18/145,221 US11894406B2 (en) 2013-05-24 2022-12-22 Solid-state imaging device and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013109636A JP6130221B2 (ja) 2013-05-24 2013-05-24 固体撮像装置、および電子機器

Related Child Applications (1)

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JP2016211987A Division JP6316902B2 (ja) 2016-10-28 2016-10-28 固体撮像装置、および電子機器

Publications (3)

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JP2014229810A JP2014229810A (ja) 2014-12-08
JP2014229810A5 JP2014229810A5 (enExample) 2016-02-25
JP6130221B2 true JP6130221B2 (ja) 2017-05-17

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US (7) US9570501B2 (enExample)
JP (1) JP6130221B2 (enExample)
CN (2) CN104183611B (enExample)

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