JP6933157B2 - 赤外線受光装置及び赤外線受光装置を作製する方法 - Google Patents
赤外線受光装置及び赤外線受光装置を作製する方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 134
- 239000000758 substrate Substances 0.000 claims description 88
- 238000005530 etching Methods 0.000 claims description 64
- 238000000206 photolithography Methods 0.000 claims description 5
- 229910005542 GaSb Inorganic materials 0.000 description 21
- 238000010586 diagram Methods 0.000 description 13
- 229910000673 Indium arsenide Inorganic materials 0.000 description 12
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003362 semiconductor superlattice Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Description
支持体21:500〜700マイクロメートル厚のn型GaSb基板、及び0.3〜1マイクロメートル厚のn型GaSbのバッファ層21b。
第1超格子層23:n型GaSb/InAs超格子層(タイプII)、1〜5マイクロメートル厚。
第2超格子層24:GaSb/InAs超格子光吸収層(タイプII)、1〜4マイクロメートル厚。
半導体領域25:p型GaSb/InAs超格子層(タイプII)、0.2〜0.8マイクロメートル厚。
半導体領域25:p型GaSbコンタクト層、0.05〜0.4マイクロメートル厚。
半導体基板60:n型GaSb基板。
第1半導体層61:n型GaSb/InAs超格子層。
第2半導体層62:GaSb/InAs超格子光吸収層。
第3半導体層63:p型GaSb/InAs超格子層及びp型GaSbコンタクト層。
本実施例では、第1マスクM11は、例えばシリコン系無機絶縁体を備える。
第1開口AP1M11の幅M11W:0.5〜5μm。
第1開口AP1M11は、図2の(a)部に示される第1溝47における深底を形成すべきエリアに位置する。
エッチングガスは、例えばハロゲン系ガスである。
第3窪部53の深さDP53;1.2〜4マイクロメートル。
第3窪部53の深さは、図2の(a)部に示される第1溝47における深底と淺底との差に関連している。
エッチングマスクRM:レジスト。
第1開口AP1RMの幅W1RM:3〜10μm。
第2開口AP2RM幅W2RM:3〜10μm。
第1開口AP1M12の幅W1M12:0.5〜5μm。
第1マスクM12は、例えばシリコン系無機絶縁体を備える。
第2開口AP2M22の幅W2M22:0.5〜5μm。
第2マスクM22は、例えばシリコン系無機絶縁体を備える。
Claims (7)
- 赤外線受光装置であって、
支持体と前記支持体上に順に配列された第1超格子層、第2超格子層、及び半導体領域を含む積層体とを含み、前記積層体に設けられフォトダイオードのための半導体メサのアレイ及び前記アレイを規定する窪みを有する構造物と、
前記積層体の前記第1超格子層に接続された第1電極と、
を備え、
前記第1超格子層はn導電性を有し、前記半導体領域はp導電性を有し、前記第1超格子層はタイプII構造を有すると共に前記支持体にヘテロ接合を成し、
前記窪みは、第1窪部及び第2窪部を含み、前記第2窪部は、前記第1超格子層内に位置する底を有し、前記第1窪部は前記第2窪部より深い、赤外線受光装置。 - 前記第1窪部は、前記支持体内に位置する底を有する、請求項1に記載された赤外線受光装置。
- 前記構造物の前記窪みは、第1軸の方向に延在する複数の第1溝と、前記第1軸の方向に交差する第2軸の方向に延在する複数の第2溝とを含み、
前記第1溝の各々は、前記第1窪部を提供できる深さを有し、
前記第2溝の各々は、前記第2窪部を提供できる深さを有する、請求項1又は請求項2に記載された赤外線受光装置。 - 前記構造物の前記第1超格子層は、第1軸の方向に延在する複数の帯部を含み、
前記第1電極は、前記第1超格子層の前記帯部の各々に接触を成す、請求項1〜請求項3のいずれか一項に記載された赤外線受光装置。 - 赤外線受光装置を作製する方法であって、
第1超格子層、第2超格子層、及び半導体領域を含む半導体積層体と該半導体積層体を搭載する支持体とを有するエピタキシャル基板を準備する工程と、
フォトリソグラフィ及びエッチングを用いて前記エピタキシャル基板を加工して、フォトダイオードのための半導体メサのアレイを規定する窪みを前記エピタキシャル基板に形成する工程と、
を備え、
前記第1超格子層、前記第2超格子層、及び前記半導体領域は、前記支持体上に順に配列され、
前記第1超格子層はn導電性を有し、前記半導体領域はp導電性を有し、前記第1超格子層はタイプII構造を有すると共に前記支持体にヘテロ接合を成し、
前記窪みは、第1窪部及び第2窪部を含み、前記第2窪部は、前記第1超格子層内に位置する底を有し、前記第1窪部は前記第2窪部より深い、赤外線受光装置を作製する方法。 - 窪みを前記エピタキシャル基板に形成する前記工程は、
第1軸の方向に延在する開口を有する第1マスクを前記エピタキシャル基板上に形成する工程と、
前記第1窪部及び前記第2窪部より浅い第3窪部を前記エピタキシャル基板に前記第1マスクを用いた加工により形成して、第1基板生産物を得る工程と、
前記第1軸の方向に延在する第1開口及び前記第1軸の方向に交差する第2軸の方向に延在する第2開口を有する第2マスクを前記第1基板生産物上に形成する工程と、
前記第2マスクを用いて前記第1基板生産物を加工して、前記第1窪部及び前記第2窪部を前記第1基板生産物に形成する工程と、
前記第2マスクを除去して、第2基板生産物を得る工程と、
を備え、
前記第2基板生産物における前記第1窪部及び前記第2窪部は、それぞれ、前記第2マスクの前記第1開口及び前記第2開口の位置に形成され、
前記第2マスクの前記第1開口は、前記第1マスクの前記開口に位置合わせされる、請求項5に記載された赤外線受光装置を作製する方法。 - 窪みを前記エピタキシャル基板に形成する前記工程は、
第1開口を有する第1マスクを前記エピタキシャル基板上に形成する工程と、
前記第1マスクを用いて前記エピタキシャル基板に第1エッチングを適用する工程と、
前記第1エッチングの後に前記第1マスクを除去して、第1基板生産物を得る工程と、
第2開口を有する第2マスクを前記第1基板生産物上に形成する工程と、
前記第2マスクを用いて前記第1基板生産物に第2エッチングを適用する工程と、
前記第2エッチングの後に前記第2マスクを除去して、前記第1窪部及び前記第2窪部を含む第2基板生産物を得る工程と、
を備え、
前記第1エッチング及び前記第2エッチングの一方は、前記第1窪部の深さを可能にする第1条件で行われ、
前記第1エッチング及び前記第2エッチングの他方は、前記第2窪部の深さを可能にする第2条件で行われる、請求項5に記載された赤外線受光装置を作製する方法。
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