CN103887360B - InAs/GaSb超晶格红外光电探测器及其制备方法 - Google Patents
InAs/GaSb超晶格红外光电探测器及其制备方法 Download PDFInfo
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- CN103887360B CN103887360B CN201410153659.0A CN201410153659A CN103887360B CN 103887360 B CN103887360 B CN 103887360B CN 201410153659 A CN201410153659 A CN 201410153659A CN 103887360 B CN103887360 B CN 103887360B
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- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 117
- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 89
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- 230000004888 barrier function Effects 0.000 claims abstract description 31
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 20
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
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CN201410153659.0A CN103887360B (zh) | 2014-04-16 | 2014-04-16 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
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CN104499054B (zh) * | 2014-12-17 | 2017-04-19 | 中国科学院半导体研究所 | 硅基高晶体质量InAsSb平面纳米线的生长方法 |
CN105161551A (zh) * | 2015-08-14 | 2015-12-16 | 哈尔滨工业大学 | 一种可以降低InAs/GaSb超晶格长波红外探测器暗电流的表面钝化方法 |
CN105140333A (zh) * | 2015-09-10 | 2015-12-09 | 中国科学院半导体研究所 | 制作InSb红外探测器的材料结构及制备方法 |
CN105789364B (zh) * | 2016-05-25 | 2018-07-06 | 中国科学院上海技术物理研究所 | 一种无铝型ii类超晶格长波双势垒红外探测器 |
CN105957918B (zh) * | 2016-07-04 | 2017-11-03 | 中国科学院半导体研究所 | 一种双通道宽光谱探测器及其制备方法 |
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CN108231926B (zh) * | 2016-12-15 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种红外探测器及其制备方法 |
CN107393982B (zh) * | 2017-07-12 | 2023-06-27 | 秦皇岛博硕光电设备股份有限公司 | 提高铟砷/镓锑超晶格红外探测器材料截止波长的方法及铟砷/镓锑ⅱ类超晶格及其应用 |
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US6005259A (en) * | 1997-09-23 | 1999-12-21 | National Science Council | InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy |
CN1464563A (zh) * | 2002-06-28 | 2003-12-31 | 中国科学院物理研究所 | 复合量子点器件及制备方法 |
CN102534764A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法 |
-
2014
- 2014-04-16 CN CN201410153659.0A patent/CN103887360B/zh active Active
Patent Citations (3)
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US6005259A (en) * | 1997-09-23 | 1999-12-21 | National Science Council | InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy |
CN1464563A (zh) * | 2002-06-28 | 2003-12-31 | 中国科学院物理研究所 | 复合量子点器件及制备方法 |
CN102534764A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法 |
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