CN109524499A - 可见光拓展的中波红外探测器单元器件及其制备方法 - Google Patents
可见光拓展的中波红外探测器单元器件及其制备方法 Download PDFInfo
- Publication number
- CN109524499A CN109524499A CN201710843846.5A CN201710843846A CN109524499A CN 109524499 A CN109524499 A CN 109524499A CN 201710843846 A CN201710843846 A CN 201710843846A CN 109524499 A CN109524499 A CN 109524499A
- Authority
- CN
- China
- Prior art keywords
- layer
- absorbed layer
- table top
- preparation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 238000009616 inductively coupled plasma Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 21
- 229910005542 GaSb Inorganic materials 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 11
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 4
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 238000012856 packing Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 75
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710843846.5A CN109524499A (zh) | 2017-09-18 | 2017-09-18 | 可见光拓展的中波红外探测器单元器件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710843846.5A CN109524499A (zh) | 2017-09-18 | 2017-09-18 | 可见光拓展的中波红外探测器单元器件及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109524499A true CN109524499A (zh) | 2019-03-26 |
Family
ID=65769600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710843846.5A Pending CN109524499A (zh) | 2017-09-18 | 2017-09-18 | 可见光拓展的中波红外探测器单元器件及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109524499A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112687751A (zh) * | 2020-12-29 | 2021-04-20 | 全磊光电股份有限公司 | 一种高速光电探测器结构及其制造方法 |
CN117747693A (zh) * | 2023-11-22 | 2024-03-22 | 广州市南沙区北科光子感知技术研究院 | 一种基于GaSb光子晶体板的多光谱短波红外探测器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
JP2015032796A (ja) * | 2013-08-06 | 2015-02-16 | 住友電気工業株式会社 | 受光素子、その製造方法、および光センサ装置 |
CN106024931A (zh) * | 2016-06-12 | 2016-10-12 | 中国科学院半导体研究所 | InAs/GaSb超晶格光子晶体红外探测器及其制备方法 |
-
2017
- 2017-09-18 CN CN201710843846.5A patent/CN109524499A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015032796A (ja) * | 2013-08-06 | 2015-02-16 | 住友電気工業株式会社 | 受光素子、その製造方法、および光センサ装置 |
CN103887360A (zh) * | 2014-04-16 | 2014-06-25 | 中国科学院半导体研究所 | InAs/GaSb超晶格红外光电探测器及其制备方法 |
CN106024931A (zh) * | 2016-06-12 | 2016-10-12 | 中国科学院半导体研究所 | InAs/GaSb超晶格光子晶体红外探测器及其制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112687751A (zh) * | 2020-12-29 | 2021-04-20 | 全磊光电股份有限公司 | 一种高速光电探测器结构及其制造方法 |
CN112687751B (zh) * | 2020-12-29 | 2022-06-21 | 全磊光电股份有限公司 | 一种高速光电探测器结构及其制造方法 |
CN117747693A (zh) * | 2023-11-22 | 2024-03-22 | 广州市南沙区北科光子感知技术研究院 | 一种基于GaSb光子晶体板的多光谱短波红外探测器 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107452823B (zh) | 一种微米线阵列光探测器及其制备方法 | |
CN107195701B (zh) | 台面式砷化镓掺硅阻挡杂质带太赫兹探测器及其制作方法 | |
CN101419996B (zh) | 红外—紫外多色探测器及其制备方法 | |
US10290795B2 (en) | Packaging method and semiconductor device | |
US9112103B1 (en) | Backside transparent substrate roughening for UV light emitting diode | |
CN104733561B (zh) | 一种氮化物量子阱红外探测器及其制备方法 | |
CN107994095B (zh) | 一种高增益紫外至近红外InGaAs探测器芯片 | |
CN105590971B (zh) | AlGaN日盲紫外增强型雪崩光电探测器及其制备方法 | |
CN102569521A (zh) | 钝化InAs/GaSb二类超晶格红外探测器制作方法 | |
US11810994B2 (en) | Infrared-transmitting high-sensitivity visible light detector and preparation method thereof | |
US11282977B2 (en) | Silicon carbide detector and preparation method therefor | |
CN110047955A (zh) | 一种AlGaN紫外雪崩光电二极管探测器及其制备方法 | |
CN104009393A (zh) | 一种单方向发射的电泵浦氮化镓微激光器及其制备方法 | |
CN110047968A (zh) | 一种AlGaN基3D倒装焊MSM阵列紫外探测器的制备方法 | |
CN106024931A (zh) | InAs/GaSb超晶格光子晶体红外探测器及其制备方法 | |
CN109524499A (zh) | 可见光拓展的中波红外探测器单元器件及其制备方法 | |
CN103413863A (zh) | 一种延伸波长的平面型铟镓砷红外探测器芯片制备方法 | |
CN105161551A (zh) | 一种可以降低InAs/GaSb超晶格长波红外探测器暗电流的表面钝化方法 | |
CN107195700B (zh) | 电场分布均匀的硅掺磷阻挡杂质带探测器及其制作方法 | |
CN103325880B (zh) | 一种增强型硅基光电二极管及其制作方法 | |
CN104538481A (zh) | InGaAs/QWIP双色红外探测器及其制备方法 | |
CN106711289A (zh) | 一种抑制锑化物超晶格红外探测器表面泄露电流的方法 | |
CN103904161B (zh) | 双光栅双色量子阱红外探测器面阵的制作方法 | |
CN103681940A (zh) | 一种二硫化钼-氧化锌量子点混合场效应光晶体管及其制造方法 | |
CN110429156B (zh) | 一种基于分形纳米线表面结构的Si-APD光电探测器及制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Guo Chunyan Inventor after: Wang Guowei Inventor after: Xu Yingqiang Inventor after: Niu Zhichuan Inventor after: Sun Yaoyao Inventor after: Jiang Zhi Inventor after: Hao Hongyue Inventor after: Lv Yuexi Inventor after: Wang Tao Inventor before: Guo Chunyan Inventor before: Sun Yaoyao Inventor before: Jiang Zhi Inventor before: Hao Hongyue Inventor before: Lv Yuexi Inventor before: Wang Guowei Inventor before: Xu Yingqiang Inventor before: Wang Tao Inventor before: Niu Zhichuan |
|
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190326 |